Surface plasma photoetching imaging structure and method and computer readable medium

Abstract

The invention provides a surface plasma photoetching imaging structure and method and a computer readable medium. The surface plasma photoetching imaging structure comprises a reflecting layer, photoresist, a first resonant cavity structure and a mask layer, the reflecting layer is arranged on one side of the to-be-etched structure, the photoresist is arranged on one side, far away from the to-be-etched structure, of the reflecting layer, and the first resonant cavity structure is arranged on one side, far away from the to-be-etched structure, of the photoresist; the mask layer is arranged on the side, away from the to-be-etched structure, of the first resonant cavity structure; the first resonant cavity structure is arranged between the mask layer and the photoresist of the surface plasma photoetching imaging structure, so that the localization effect of a light field is enhanced, the diffraction limit is further broken through, the imaging performance is optimized, and the resolution is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a surface plasma lithography imaging structure, method and computer-readable medium. Background Art

[0002] With the development of semiconductor-related technologies, photolithography, one of the important technologies for manufacturing semiconductor devices, is also developing rapidly. Traditional optical lithography relies on the principle of optical imaging. It uses a light source to illuminate the mask and project the mask pattern onto a substrate coated with photoresist, thereby completing the replication and transfer of the mask pattern. However, as integrated circuits continue to develop towards higher density and smaller size, traditional photolithography faces a serious resolution bottleneck and is difficult to meet micron-level or even nano-level manufacturing requirements. Traditional optical lithography mainly includes deep ultraviolet lithography (DUVL) and extreme ultraviolet lithography (EUVL).

[0003] As a supplement to mainstream lithography, surface plasmon lithography is very different from traditional optical lithography. Surface plasmon lithography can break through the diffraction limit in traditional lithography by utilizing evanescent near-field imaging containing high-frequency information.

[0004] However, how to use surface plasma lithography technology to further break through the diffraction limit and improve resolution is an urgent problem to be solved. Summary of the invention

[0005] In view of this, the purpose of the present application is to provide a surface plasmon lithography imaging structure, method and computer-readable medium, which can utilize the surface plasmon lithography imaging structure to further break through the diffraction limit and improve the resolution.

[0006] To achieve the above purpose, this application has the following technical solutions:

[0007] The present application provides a surface plasma lithography imaging structure, comprising:

[0008] A reflective layer disposed on one side of the structure to be etched;

[0009] A photoresist is disposed on a side of the reflective layer away from the structure to be etched;

[0010] A first resonant cavity structure is provided on a side of the photoresist away from the structure to be etched;

[0011] A mask layer is disposed on a side of the first resonant cavity structure away from the structure to be etched.

[0012] Optionally, the first resonant cavity structure includes a first stacked structure, the first stacked structure includes a first metal layer and a first dielectric layer, and the first dielectric layer is arranged on a side of the first metal layer away from the structure to be etched.

[0013] Optionally, a second resonant cavity structure is arranged between the reflective layer and the structure to be etched.

[0014] Optionally, the second resonant cavity structure includes at least one second stacked structure, the second stacked structure includes a second metal layer and a second dielectric layer, and the second dielectric layer is arranged on a side of the second metal layer away from the structure to be etched.

[0015] Optionally, the thickness of the second resonant cavity structure is greater than the thickness of the first resonant cavity structure.

[0016] Optionally, the thickness of the first metal layer is in the range of 5-50 nm, and the thickness of the first dielectric layer is in the range of 1-50 nm.

[0017] Optionally, under the mask pattern of the same mask layer, the pattern period formed when the structure to be etched is etched is adjusted by adjusting the thickness of the photoresist.

[0018] Optionally, a transparent substrate is provided on a side of the mask layer away from the structure to be etched.

[0019] The present application provides a surface plasma lithography imaging method, comprising:

[0020] forming a reflective layer on one side of the structure to be etched;

[0021] forming a photoresist on a side of the reflective layer away from the structure to be etched;

[0022] Forming a first resonant cavity structure on a side of the photoresist away from the structure to be etched;

[0023] A mask layer is formed on a side of the first resonant cavity structure away from the structure to be etched; the reflective layer, the photoresist, the first resonant cavity structure and the mask layer form a surface plasma lithography imaging structure;

[0024] Irradiating the surface plasma lithography imaging structure in a direction from the mask layer toward the structure to be etched, so as to transfer the mask pattern of the mask layer to the photoresist to form a patterned photoresist;

[0025] The structure to be etched is etched using the patterned photoresist.

[0026] The present application provides a computer-readable medium, comprising instructions, which, when executed on a computer, enable the computer to execute the method described above.

[0027] The present application provides a surface plasma lithography imaging structure, comprising: a reflective layer, a photoresist, a first resonant cavity structure and a mask layer; the reflective layer is arranged on one side of a structure to be etched, the photoresist is arranged on a side of the reflective layer away from the structure to be etched, and the first resonant cavity structure is arranged on a side of the photoresist away from the structure to be etched; the mask layer is arranged on a side of the first resonant cavity structure away from the structure to be etched; by arranging the first resonant cavity structure between the mask layer and the photoresist of the surface plasma lithography imaging structure, the localization effect of the light field is enhanced, the diffraction limit is further broken through, the imaging performance is optimized, and the resolution is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 A schematic structural diagram of a surface plasma lithography imaging structure provided in an embodiment of the present application is shown;

[0030] Figure 2 A schematic structural diagram of another surface plasma lithography imaging structure provided in an embodiment of the present application is shown;

[0031] Figure 3 A schematic diagram showing the imaging effect of a strict coupled wave analysis algorithm at a wavelength of 436 nm provided in an embodiment of the present application is shown;

[0032] Figure 4 A schematic diagram showing the imaging effect of a finite element method algorithm at a wavelength of 436 nm provided in an embodiment of the present application;

[0033] Figure 5 A schematic diagram showing the imaging effect of a strict coupled wave analysis algorithm at a wavelength of 532 nm provided in an embodiment of the present application;

[0034] Figure 6 A schematic diagram showing the imaging effect of a finite element method algorithm at a wavelength of 532 nm provided in an embodiment of the present application is shown;

[0035] Figure 7 A schematic diagram showing the imaging effect of a strict coupled wave analysis algorithm at a wavelength of 633 nm provided in an embodiment of the present application is shown;

[0036] Figure 8A schematic diagram showing the imaging effect of a finite element method algorithm at a wavelength of 633 nm provided in an embodiment of the present application is shown;

[0037] Fig. 9 A schematic diagram showing an imaging effect of a photoresist with a thickness of 25 nm at a wavelength of 436 nm provided by an embodiment of the present application;

[0038] Fig.10 A schematic diagram showing an imaging effect of a photoresist having a thickness of 40 nm at a wavelength of 436 nm provided in an embodiment of the present application;

[0039] Fig.11 A schematic diagram of a photoresist light intensity distribution at a wavelength of 532 nm provided in an embodiment of the present application is shown;

[0040] Fig.12 A schematic diagram of a photoresist light intensity distribution at a wavelength of 633 nm provided in an embodiment of the present application is shown;

[0041] Fig.13 A schematic flow chart of a surface plasma lithography imaging method provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0042] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0043] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0044] This application is described in detail with reference to schematic diagrams. When describing the embodiments of this application in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of this application. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0045] Photolithography is one of the indispensable core technologies in modern micro-nano manufacturing and is widely used in the production process of integrated circuits, optoelectronic devices and nanotechnology. Traditional optical lithography relies on the principle of optical imaging, which uses a light source to illuminate the mask and project the mask pattern onto a substrate coated with photoresist to complete the replication and transfer of the mask pattern. However, as integrated circuits continue to develop towards higher density and smaller size, traditional optical lithography faces a serious resolution bottleneck and is difficult to meet the needs of micron-level or even nano-level manufacturing.

[0046] According to the principle of optical diffraction, the resolution of traditional optical lithography is limited by the diffraction limit, which is usually given by the following formula.

[0047]

[0048] According to the above formula, for deep ultraviolet lithography, the current immersion lithography technology (using a 193nm wavelength light source) can already achieve a resolution of about 38 nanometers (76 nanometers per period), while the limit resolution for commercial mass production is 40 nanometers (80 nanometers per period), that is, the resolution of the immersion lithography technology is close to one-fifth of the wavelength. Despite this, this resolution is still difficult to meet the future manufacturing needs of nanoscale and even sub-nanometer electronic and optoelectronic devices, especially in the integrated circuit process of smaller size and higher integration.

[0049] At present, surface plasmon lithography (SPL) technology is an emerging nanoscale optical technology. By utilizing the local enhancement effect of surface plasmon, more precise optical manipulation can be achieved on a sub-wavelength scale. Therefore, some studies have proposed to use the negative refractive properties of materials to achieve a resolution of the wavelength level or even smaller, which has the potential to reduce the resolution of lithography to one tenth of the wavelength or less, but these technologies have not yet been applied to lithography technology.

[0050] Therefore, how to use surface plasma lithography technology to further break through the diffraction limit and improve the resolution is an urgent problem to be solved.

[0051] Based on this, the present application provides a surface plasma lithography imaging structure, comprising: a reflective layer, a photoresist, a first resonant cavity structure and a mask layer; the reflective layer is arranged on one side of the structure to be etched, the photoresist is arranged on the side of the reflective layer away from the structure to be etched, and the first resonant cavity structure is arranged on the side of the photoresist away from the structure to be etched; the mask layer is arranged on the side of the first resonant cavity structure away from the structure to be etched; by arranging the first resonant cavity structure between the mask layer and the photoresist of the surface plasma lithography imaging structure, the localization effect of the light field is enhanced, the diffraction limit is further broken through, the imaging performance is optimized, and the resolution is improved.

[0052] In order to better understand the technical solution and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0053] refer to Figure 1 , which is a schematic structural diagram of a surface plasma lithography imaging structure provided in an embodiment of the present application, the surface plasma lithography imaging structure includes: a reflective layer 110 , a photoresist 120 , a first resonant cavity structure 130 and a mask layer 140 .

[0054] In the embodiment of the present application, the reflective layer 110 is disposed on one side of the structure to be etched 100, that is, the reflective layer 110 covers the structure to be etched 100. The structure to be etched 100 may be a single film layer or a semiconductor structure including multiple film layers manufactured through multiple manufacturing processes.

[0055] As an example, the structure 100 to be etched is a wafer, and the material of the wafer is silicon (Si), germanium (Ge), gallium arsenide (GaAs), quartz glass, sapphire glass or other materials suitable for microelectronics manufacturing.

[0056] The reflective layer 110 is used to improve the adhesion of the photoresist 120 disposed thereon, and to provide conductivity, reflectivity or other optical properties during the photolithography and development process to enhance the imaging effect and pattern transfer accuracy. The reflective layer 110 may be made of a metal material, such as silver.

[0057] In an embodiment of the present application, the photoresist 120 is arranged on a side of the reflective layer 110 away from the structure to be etched 100, that is, the photoresist 120 covers the reflective layer 110. The photoresist 120 is used for patterning to transfer the mask pattern. The photoresist 120 includes a positive photoresist and a negative photoresist. After the positive photoresist is exposed, the positive photoresist in the exposed area will be removed by development, while the unexposed area will be retained; the negative photoresist is the opposite, the negative photoresist in the exposed area will be retained, and the unexposed area will be removed by development. The photoresist 120 is selected according to the photosensitivity, resolution, viscosity and etching selectivity ratio with the material of the structure to be etched 100.

[0058] In the embodiment of the present application, the first resonant cavity structure 130 is disposed on the side of the photoresist 120 away from the structure to be etched 100, that is, the first resonant cavity structure 130 covers the photoresist 120. The first resonant cavity structure 130 is used to adjust the reflection, transmission and enhancement effect of light and has a resonant cavity effect.

[0059] In an embodiment of the present application, the mask layer 140 is disposed on a side of the first resonant cavity structure 130 away from the structure to be etched 100, that is, the mask layer 140 covers the first resonant cavity structure 130. The mask layer 140 refers to a mask structure used to define and transfer micro-nano patterns in a photolithography process. The mask layer 140 can accurately transfer the designed pattern to a photoresist or other photosensitive material through exposure and development steps, thereby forming a desired microstructure. To achieve plasma excitation, the mask layer 140 is usually composed of a transparent material and a metal pattern. The metal pattern is made on a mask substrate by photolithography technology. The transparent material and the metal pattern are used to control the passage and shielding of light, respectively.

[0060] As an example, refer to Figure 1 or Figure 2As shown, the material of the metal pattern of the mask layer 140 is silver, and the transparent material is air. The mask pattern of the mask layer 140 is in a strip shape with one-dimensional periodic changes.

[0061] From the above description, it can be seen that by setting the first resonant cavity structure 130 between the mask layer 140 and the photoresist 120 of the surface plasma lithography imaging structure, the first resonant cavity structure 130 is used to enhance the localization effect of the light field, further break through the diffraction limit, optimize the imaging performance, and improve the resolution.

[0062] In the embodiment of the present application, the first resonant cavity structure 130 includes a first stacked structure, the first stacked structure includes a first metal layer 131 and a first dielectric layer 132, the first dielectric layer 132 is arranged on a side of the first metal layer 131 away from the structure to be etched 100, that is, the first dielectric layer 132 covers the first metal layer 131, Figure 1 and Figure 2 shown.

[0063] The optical performance of the resonant cavity is optimized to meet the design requirements by providing a first stacked structure including a first metal layer 131 and a first dielectric layer 132. The first metal layer 131 is used to provide reflectivity and conductivity, and the first dielectric layer 132 is used to adjust the propagation characteristics and wavelength response of light, such as adjusting the propagation, reflection and transmission characteristics of light.

[0064] Specifically, the material of the first metal layer 131 can be a metal material or a material having negative refractive index and high reflectivity characteristics at the optical wavelength used for imaging, such as silver, aluminum or gold, and the material of the first dielectric layer 132 can be air, high-purity water, or other dielectric materials, such as silicon oxide or silicon nitride.

[0065] The thickness of the first metal layer 131 is in the range of 5-50 nm, and the thickness of the first dielectric layer 132 is in the range of 1-50 nm. That is, by setting the first metal layer 131 and the first dielectric layer 132 with appropriate thicknesses, the resonant cavity effect of the first resonant cavity structure 130 is achieved.

[0066] The thickness, material and manufacturing method of the first metal layer 131 and the first dielectric layer 132 can be optimized according to parameters such as the operating wavelength, reflection requirements and resonance frequency of the first resonant cavity structure 130 , so as to obtain an efficient first resonant cavity structure 130 .

[0067] In the embodiment of the present application, a second resonant cavity structure 210 is disposed between the reflective layer 110 and the structure to be etched 100. Figure 2As shown, the second resonant cavity structure 210 and the first resonant cavity structure 130 are arranged opposite to each other, and a reflective layer 110 and a photoresist are arranged between the second resonant cavity structure 210 and the first resonant cavity structure 130. Through the cooperation of the first resonant cavity structure 130 and the second resonant cavity structure 210, the light field is further enhanced and the light wave propagation characteristics are controlled, thereby further enhancing the localization effect of the light field, further breaking through the diffraction limit, optimizing the imaging performance, and improving the resolution.

[0068] In the embodiment of the present application, the second resonant cavity structure 210 includes at least one second stacked structure, the second stacked structure includes a second metal layer 211 and a second dielectric layer 212, the second dielectric layer 212 is arranged on the side of the second metal layer 211 away from the structure to be etched 100, that is, the second dielectric layer 212 covers the second metal layer 211, Figure 2 shown.

[0069] The optical performance of the resonant cavity is optimized to meet the design requirements by providing a second stacked structure including a second metal layer 211 and a second dielectric layer 212. The second metal layer 211 is used to provide reflectivity, and the second dielectric layer 212 is used to adjust the propagation characteristics and wavelength response of light, such as adjusting the propagation, reflection and transmission characteristics of light.

[0070] Specifically, the material of the second metal layer 211 can be a metal material or a material having negative refractive index and high reflectivity characteristics at the optical wavelength used for imaging, such as silver, aluminum or gold, and the material of the second dielectric layer 212 can be a dielectric material, such as silicon oxide or silicon nitride.

[0071] The thickness of the second metal layer 211 is in the range of 5-50 nm, and the thickness of the second dielectric layer 212 is in the range of 1-50 nm. That is, by setting the second metal layer 211 and the second dielectric layer 212 with appropriate thicknesses, the resonant cavity effect of the second resonant cavity structure 210 is achieved.

[0072] The thickness, material and refractive index of the second metal layer 211 and the second dielectric layer 212 can be optimized according to parameters such as the operating wavelength, reflection requirements and resonance frequency of the second resonant cavity structure 210 , thereby obtaining an efficient second resonant cavity structure 210 .

[0073] The second resonant cavity structure 210 may include at least one second stacked structure. The specific number of layers of the second stacked structure may be determined according to the design requirements of the second resonant cavity structure 210 , thereby obtaining an efficient second resonant cavity structure 210 .

[0074] As an example, refer to Figure 2 As shown, the second resonant cavity structure 210 includes two second stacked structures.

[0075] In the embodiment of the present application, the thickness of the second resonant cavity structure 210 is greater than the thickness of the first resonant cavity structure 130. The thickness of the second resonant cavity structure 210 is greater than the thickness of the first resonant cavity structure 130, so at least one second stacked structure can be provided to achieve the localization effect of enhancing the light field in cooperation with the first resonant cavity structure 130.

[0076] In the embodiment of the present application, a transparent substrate 150 is disposed on the side of the mask layer 140 away from the structure to be etched 100, that is, the transparent substrate 150 covers the mask layer 140. The transparent substrate 150 can protect the mask layer 140 and transmit light. The material of the transparent substrate 150 can be quartz material or glass material.

[0077] In an embodiment of the present application, the surface plasma lithography imaging structure can be irradiated in the direction of the mask layer 140 toward the structure to be etched 100, that is, the surface plasma lithography imaging structure can be irradiated with vertically incident parallel light to transfer the mask pattern of the mask layer 140 to the photoresist 120 to form a patterned photoresist 120, and then the structure to be etched 100 is etched using the patterned photoresist 120, and finally the mask pattern is transferred to the structure to be etched 100.

[0078] The surface plasma lithography imaging structure can be applied to surface plasma lithography imaging at wavelengths of 436 nm, 532 nm and 633 nm, which will be described in detail below.

[0079] At a wavelength of 436 nm and a period of 740 nm for the mask pattern, the surface plasma lithography imaging structure provided in the embodiment of the present application can be used to achieve a stripe resolution of 32 nm (~1 / 13.5 lithography wavelength), referring to Figure 3 The imaging effect of the rigorous coupled wave analysis (RCWA) algorithm at a wavelength of 436nm is shown. Figure 4 The finite element method (FEM) algorithm imaging effect is shown at a wavelength of 436nm.

[0080] At a wavelength of 532 nm and a period of 1000 nm for the mask pattern, the surface plasma lithography imaging structure provided in the embodiment of the present application can be used to achieve a fringe resolution of 41.6 nm (~1 / 12.8 lithography wavelength), referring to Figure 5 The imaging effect of the rigorous coupled wave analysis algorithm at a wavelength of 532nm is shown. Figure 6 The finite element method algorithm imaging effect at a wavelength of 532nm is shown.

[0081] At a wavelength of 633 nm and a period of 1152 nm for the mask pattern, the surface plasma lithography imaging structure provided in the embodiment of the present application can be used to achieve a fringe resolution of 28.8 nm (~1 / 11 of the lithography wavelength), referring to Figure 7The imaging effect of the rigorous coupled wave analysis algorithm at a wavelength of 633nm is shown. Figure 8 The finite element method algorithm imaging effect is shown at a wavelength of 633nm.

[0082] It can be seen that in the surface plasma lithography imaging structure provided in the embodiment of the present application, a self-excitation effect can be generated and super-resolution imaging can be achieved, achieving an imaging resolution that is much smaller than the lithography wavelength at wavelengths of 436nm, 532nm and 633nm.

[0083] In the embodiment of the present application, under the same mask pattern of the mask layer 140 and the same light wavelength, the pattern period formed when the structure to be etched 100 is etched is adjusted by adjusting the thickness of the photoresist 120 .

[0084] As an example, at a wavelength of 436 nm and a period of the mask pattern of 740 nm, stripes of different resolutions can be generated by changing the thickness of the photoresist 120. When the thickness of the photoresist is 50 nm, the critical dimension (CD) is 32 nm, that is, CD=32 nm. Figure 3 As shown; when the thickness of the photoresist is 25nm, CD=26.5nm, reference Fig. 9 As shown; when the thickness of the photoresist is 40nm, CD=34nm, reference Fig.10 shown.

[0085] In the embodiments of the present application, the contrast of imaging using the surface plasma lithography imaging structure is higher than that required by traditional optical lithography. Fig.11 and Fig.12 As shown, the imaging light intensity in the photoresist exposed at 532nm and 633nm respectively, and the contrast at 532nm and 633nm calculated according to the contrast calculation formula are 0.985 and 0.991 respectively, which are much higher than 0.4 required by traditional optical lithography, indicating that the imaging effect of the surface plasma lithography imaging structure provided in the embodiment of the present application is better.

[0086] From the above description, it can be seen that the surface plasma lithography imaging structure provided in the embodiment of the present application can improve the resolution of imaging by setting the first resonant cavity structure 130 and the second resonant cavity structure 210. For example, at a wavelength of 436nm, the imaging half-period (resolution) is reduced to 7.33% of the wavelength (CD=32nm), which is much smaller than the current limiting resolution of optical imaging, and super-resolution imaging is successfully achieved. The surface plasma lithography imaging structure provided in the embodiment of the present application can also be applied to light sources of various wavelengths, not only to obtain super-resolution imaging effects at a wavelength of 436nm, but also to achieve a resolution of less than 1 / 10 of the wavelength at wavelengths of 532nm and 633nm, showing good universality. The pattern obtained by imaging using the surface plasma lithography imaging structure provided in the embodiment of the present application has the characteristics of high resolution, high intensity and high contrast, which significantly improves the quality and accuracy of lithography. By combining rigorous coupled wave analysis and finite element method algorithms, the imaging results are deeply analyzed, and the practicality and reliability of the surface plasma lithography imaging structure provided in the embodiment of the present application are ensured from both theoretical and experimental levels. Imaging using the surface plasma lithography imaging structure can not only operate stably in an actual production environment, but also has high repeatability and consistency. In addition, the surface plasma lithography imaging structure provided in the embodiment of the present application can adjust the period of the pattern, for example, by changing the thickness of the photoresist, the period can be flexibly adjusted, providing more design freedom for the processing technology of semiconductor components.

[0087] Based on the surface plasma lithography imaging structure provided in the above embodiments, the present application also provides a surface plasma lithography imaging method, referring to Fig.13 FIG. 1 is a flow chart of a surface plasma lithography imaging method provided in an embodiment of the present application. The surface plasma lithography imaging method provided in an embodiment of the present application comprises the following steps:

[0088] S101, forming a reflective layer on one side of the structure to be etched.

[0089] In the embodiment of the present application, a reflective layer may be formed on one side of the structure to be etched, and may be manufactured by a deposition process.

[0090] In an embodiment of the present application, before forming the reflective layer, a second resonant cavity structure may be formed on one side of the structure to be etched. The second resonant cavity structure includes at least one second stacked structure, the second stacked structure includes a second metal layer and a second dielectric layer, and the second dielectric layer is arranged on a side of the second metal layer away from the structure to be etched, that is, the second dielectric layer covers the second metal layer.

[0091] A second stacked structure may be formed first, a second metal layer of the second stacked structure may be formed first, and then a second dielectric layer of the second stacked structure may be formed. The second metal layer may be manufactured by physical vapor deposition (PVD), sputtering deposition or electron beam evaporation. The second dielectric layer may be manufactured by chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering.

[0092] S102, forming a photoresist on a side of the reflective layer away from the structure to be etched.

[0093] In the embodiment of the present application, after the reflective layer is formed, a photoresist may be formed on a side of the reflective layer away from the structure to be etched, that is, the photoresist is formed on the reflective layer.

[0094] Specifically, the photoresist can be formed by a spin coating process. Since the photoresist will affect the accuracy of subsequent mask pattern transfer, as well as the quality and resolution of the final imaging pattern, the spin coating process is a key process for manufacturing surface plasma lithography imaging structures.

[0095] S103, forming a first resonant cavity structure on a side of the photoresist away from the structure to be etched.

[0096] In the embodiment of the present application, after the photoresist is formed, a first resonant cavity structure may be formed on a side of the photoresist away from the structure to be etched, that is, the first resonant cavity structure may be formed on the photoresist.

[0097] The first resonant cavity structure includes a first stacked structure, which includes a first metal layer and a first dielectric layer. The first dielectric layer is arranged on a side of the first metal layer away from the structure to be etched, that is, the first dielectric layer covers the first metal layer.

[0098] The first metal layer may be formed first, and then the first dielectric layer may be formed. The first metal layer may be manufactured by physical vapor deposition (PVD), sputtering deposition, or electron beam evaporation. The first dielectric layer may be manufactured by chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering.

[0099] S104, forming a mask layer on a side of the first resonant cavity structure away from the structure to be etched.

[0100] In the embodiment of the present application, after the first resonant cavity structure is formed, a mask layer may be formed on a side of the first resonant cavity structure away from the structure to be etched, that is, a mask layer is formed on the first resonant cavity structure.

[0101] Specifically, the mask layer is usually composed of a transparent material and a metal pattern. The metal pattern can be produced on the mask substrate by photolithography technology. The transparent material and the metal pattern are used to control the passage and shielding of light respectively.

[0102] After the mask layer is manufactured, a transparent substrate can be further formed on the mask layer. The second resonant cavity structure, the reflective layer, the photoresist, the first resonant cavity structure, the mask layer and the transparent substrate form a surface plasma lithography imaging structure.

[0103] S105, irradiating the surface plasma lithography imaging structure with the mask layer facing the direction of the structure to be etched, so as to transfer the mask pattern of the mask layer to the photoresist to form a patterned photoresist.

[0104] In an embodiment of the present application, the surface plasma lithography imaging structure is irradiated in the direction of the mask layer toward the structure to be etched, that is, the surface plasma lithography imaging structure is irradiated with vertically incident parallel light to transfer the mask pattern of the mask layer to the photoresist to form a patterned photoresist.

[0105] The specific formation of patterned photoresist includes two operations: exposure and development. The exposure operation refers to the use of a parallel light source to vertically impinge on the surface plasma lithography imaging structure in the photolithography process to ensure that the light beam is evenly irradiated and accurately transfers the mask pattern. Considering that TM waves are more effective than TE waves in imaging, TM polarized 436nm, 532nm and 633nm parallel light can be used for exposure.

[0106] The development operation refers to the removal of the unexposed or exposed parts (depending on the type of photoresist used) of the photoresist by a developer after exposure. The development process uses a chemical solution (developer) to treat the photoresist so that the photoresist in the exposed area is removed and the unexposed area remains unchanged, thereby forming a graphic structure consistent with the mask pattern, that is, forming a patterned photoresist.

[0107] S106, etching the structure to be etched using the patterned photoresist.

[0108] In the embodiment of the present application, after forming a patterned photoresist, the structure to be etched is etched using the patterned photoresist, and finally the mask pattern is transferred to the structure to be etched. That is, after the development is completed, the mask pattern has been transferred to the photoresist, and the etching stage is entered, that is, the thin film material under the photoresist is removed by chemical reaction or physical collision, so that the mask pattern is transferred to the structure to be etched.

[0109] Based on a surface plasma lithography imaging method provided in the above embodiment, the present application embodiment further provides a surface plasma lithography imaging device, the surface plasma lithography imaging device comprising:

[0110] The processor and the memory may be one or more processors. In some embodiments of the present application, the processor and the memory may be connected via a bus or other means.

[0111] The memory may include a read-only memory and a random access memory, and provides instructions and data to the processor. A portion of the memory may also include an NVRAM. The memory stores an operating system and operating instructions, executable modules or data structures, or a subset thereof, or an extended set thereof, wherein the operating instructions may include various operating instructions for implementing various operations. The operating system may include various system programs for implementing various basic services and processing hardware-based tasks.

[0112] The processor controls the operation of the terminal device and may also be referred to as a CPU.

[0113] The method disclosed in the above embodiment of the present application can be applied to a processor or implemented by a processor. The processor can be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by an integrated logic circuit of hardware in the processor or an instruction in the form of software. The above processor can be a general-purpose processor, DSP, ASIC, FPGA or other programmable logic device, discrete gate or transistor logic device, discrete hardware component. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc. The steps of the method disclosed in the embodiment of the present application can be directly embodied as a hardware decoding processor to perform, or the hardware and software modules in the decoding processor can be combined to perform. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0114] The embodiment of the present application also provides a computer-readable medium for storing program code, where the program code is used to execute any one of the methods of the aforementioned embodiments.

[0115] In the context of the present application, a computer-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable medium may be a computer-readable signal medium or a computer-readable storage medium. A computer-readable medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. A more specific example of a computer-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0116] It should be noted that the computer-readable medium mentioned above in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present application, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. The computer readable signal medium may also be any computer readable medium other than a computer readable storage medium, which may send, propagate or transmit a program for use by or in conjunction with an instruction execution system, apparatus or device. The program code contained on the computer readable medium may be transmitted using any suitable medium, including but not limited to: wires, optical cables, RF (radio frequency), etc., or any suitable combination of the above.

[0117] The computer-readable medium may be included in the electronic device, or may exist independently without being installed in the electronic device.

[0118] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0119] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A surface plasma lithography imaging structure, characterized in that: include: A reflective layer disposed on one side of the structure to be etched; A photoresist is disposed on a side of the reflective layer away from the structure to be etched; A first resonant cavity structure is provided on a side of the photoresist away from the structure to be etched; A mask layer is disposed on a side of the first resonant cavity structure away from the structure to be etched.

2. The surface plasma lithography imaging structure according to claim 1, characterized in that: The first resonant cavity structure includes a first stacked structure, which includes a first metal layer and a first dielectric layer. The first dielectric layer is arranged on a side of the first metal layer away from the structure to be etched.

3. The surface plasma lithography imaging structure according to claim 1, characterized in that: A second resonant cavity structure is arranged between the reflective layer and the structure to be etched.

4. The surface plasma lithography imaging structure according to claim 3, characterized in that: The second resonant cavity structure includes at least one second stacked structure, the second stacked structure includes a second metal layer and a second dielectric layer, and the second dielectric layer is arranged on a side of the second metal layer away from the structure to be etched.

5. The surface plasma lithography imaging structure according to claim 3, characterized in that: The thickness of the second resonant cavity structure is greater than the thickness of the first resonant cavity structure.

6. The surface plasma lithography imaging structure according to claim 2, characterized in that: The thickness of the first metal layer is in the range of 5-50 nm, and the thickness of the first dielectric layer is in the range of 1-50 nm.

7. The surface plasma lithography imaging structure according to claim 1, characterized in that: Under the mask pattern of the same mask layer, the pattern period formed when the structure to be etched is etched is adjusted by adjusting the thickness of the photoresist.

8. The surface plasma lithography imaging structure according to any one of claims 1 to 7, characterized in that: A transparent substrate is arranged on a side of the mask layer away from the structure to be etched.

9. A surface plasma lithography imaging method, characterized in that: include: forming a reflective layer on one side of the structure to be etched; forming a photoresist on a side of the reflective layer away from the structure to be etched; Forming a first resonant cavity structure on a side of the photoresist away from the structure to be etched; forming a mask layer on a side of the first resonant cavity structure away from the structure to be etched; The reflective layer, the photoresist, the first resonant cavity structure and the mask layer form a surface plasma lithography imaging structure; Irradiating the surface plasma lithography imaging structure in a direction from the mask layer toward the structure to be etched, so as to transfer the mask pattern of the mask layer to the photoresist to form a patterned photoresist; The structure to be etched is etched using the patterned photoresist.

10. A computer-readable medium, characterized in that The method comprises instructions which, when executed on a computer, cause the computer to perform the method as claimed in claim 9.

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