Preparation method of thin film, thin film and photoelectric device

Abstract

The invention provides a preparation method of a thin film, the thin film and a photoelectric device. In the preparation method of the thin film, the electric field is applied to the nano-particles with the surfaces connected with the ligands, so that the distance between the nano-particles in the vertical direction of the film layer can be reduced, the thickness of the film layer is reduced, and the performance of the thin film is further improved.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to a method for preparing a thin film, a thin film and an optoelectronic device. Background Art

[0002] Quantum dots are semiconductor nanostructures that confine excitons in three spatial directions. This confinement can be attributed to electrostatic potentials (created by external electrodes, doping, strain, impurities), the interface between two different semiconductor materials (e.g., in self-assembled quantum dots), the surface of a semiconductor (e.g., semiconductor nanocrystals), or a combination of the three.

[0003] The charge transport performance of films made of quantum dots needs to be further improved. Summary of the invention

[0004] The embodiments of the present application provide a method for preparing a thin film, a thin film, and an optoelectronic device, which can improve the technical problem of poor charge transfer performance of quantum dot thin films.

[0005] In a first aspect, an embodiment of the present application provides a method for preparing a thin film, comprising the steps of:

[0006] A nanoparticle solution is provided, the nanoparticle solution is deposited into a liquid film, an electric field parallel to the surface of the nanoparticle solution is applied to the liquid film, and the liquid film is dried to obtain a thin film.

[0007] In a second aspect, an embodiment of the present application provides a film, which is prepared using the above-mentioned film preparation method.

[0008] In a third aspect, an embodiment of the present application provides an optoelectronic device, comprising:

[0009] A first electrode and a second electrode arranged opposite to each other;

[0010] a functional layer, disposed between the first electrode and the second electrode;

[0011] Wherein, the functional layer comprises a film prepared by the above-mentioned film preparation method, or the above-mentioned film.

[0012] Beneficial effects of the embodiments of the present application:

[0013] In an embodiment of the present application, by applying an electric field parallel to the surface of the nanoparticle solution to the nanoparticles having a first ligand connected to their surface, the spacing between the nanoparticles in the vertical direction of the film layer can be reduced, the thickness of the film layer can be reduced, and the performance of the film can be improved. When the above-mentioned film is applied to optoelectronic devices, the performance of the optoelectronic devices can also be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0015] Figure 1 It is a schematic diagram of the layer structure provided by the optoelectronic device embodiment of the present application.

[0017] 1. Anode; 2. Hole transport layer; 3. Excitation layer; 4. Electron transport layer; 5. Cathode. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0019] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0020] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0021] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0022] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0023] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0024] The technical solution of this application is as follows:

[0025] In a first aspect, an embodiment of the present application provides a method for preparing a thin film, comprising the steps of:

[0026] A nanoparticle solution is provided, the nanoparticle solution is deposited into a liquid film, an electric field parallel to the surface of the nanoparticle solution is applied to the liquid film, and the liquid film is dried to obtain a thin film.

[0027] By applying an electric field parallel to the surface of the nanoparticle solution to the nanoparticles with the first ligand connected to the surface, the first ligand is oriented and polarized under the action of the electric field, and then the first ligand is parallel to the direction of the electric field, thereby reducing the distance between the nanoparticles in the vertical direction of the film layer, reducing the film thickness, and improving the film performance.

[0028] In some embodiments, the concentration of the nanoparticle solution is 5 mg / mL-100 mg / mL;

[0029] And / or, the drying temperature is 80°C-180°C, and the drying time is 5min-60min;

[0030] And / or, the nanoparticle solution comprises nanoparticles, ligands attached to the surface of the nanoparticles, and a solvent, the ligands comprising a first ligand, and the first ligand is selected from a C10-C30 aliphatic compound;

[0031] And / or, the electric field strength is 0.5Kv / cm-10Kv / cm.

[0032] Selecting a reasonable drying temperature and drying time can remove as much solvent as possible from the nanoparticle solution, so that the film layer remains dry and the ligands remain in a directional arrangement; at the same time, by selecting a suitable electric field strength, the effect of ligand orientation polarization can be enhanced to further reduce the film thickness.

[0033] In some embodiments, the molar ratio of nanoparticles to ligands is (4-19):1;

[0034] And / or, the solvent comprises an organic solvent. The organic solvent may be selected from one or more of tetradecene, pentadecene, tetradecane, pentadecane, hexadecane, heptadecane, octadecane, nonadecane and paraffin oil.

[0035] In some embodiments, the ligand further comprises a second ligand, and the second ligand is selected from C1-C9 aliphatic compounds.

[0036] In some embodiments, the molar ratio of the first ligand to the second ligand is (1-4): 1;

[0037] and / or, the C10-C30 aliphatic compound is selected from one or more of C10-C30 fatty acids, C10-C30 fatty alcohols, C10-C30 fatty aldehydes, C10-C30 fatty amines, C10-C30 halogenated hydrocarbons, and thiol-substituted C10-C30 aliphatic hydrocarbons;

[0038] And / or, the aliphatic compound of C1-C9 is selected from one or more of C1-C9 fatty acids, C1-C9 fatty alcohols, C1-C9 fatty aldehydes, C1-C9 fatty amines, C1-C9 halogenated hydrocarbons, and C1-C9 aliphatic hydrocarbons substituted with thiol groups. By adjusting the molar ratio between the nanoparticles and the ligands, the effect of the ligands responding to the electric field is optimized, and the aliphatic compounds with the above functional groups are selected to increase the response intensity of the nanoparticle solution to the electric field and enhance the interaction between the ligands and the electric field. At the same time, straight-chain alkanes are preferably used as the main chains of the first ligand and the second ligand, and the main chain length of the first ligand is preferably longer than the main chain length of the second ligand. By increasing the proportion of the first ligand, the interaction between the ligand and the electric field can be increased, and the spacing between the quantum dots can be further reduced.

[0039] In the present application, "substituted" means that one or more hydrogen atoms in the substituted group are replaced by a substituent.

[0040] In the present application, fatty acids refer to aliphatic chain hydrocarbon compounds or aliphatic cyclic hydrocarbon compounds substituted with a carboxyl group; further, C10-C30 fatty acids can be selected from one or more of oleic acid, decanoic acid, dioctanoic acid, trioctanoic acid, dodecanoic acid, myristic acid, palmitic acid, and stearic acid; C1-C9 fatty acids can be selected from one or more of acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, heptanoic acid, and octanoic acid.

[0041] In the present application, fatty alcohol refers to an aliphatic chain hydrocarbon compound or an aliphatic cyclic hydrocarbon compound substituted with a hydroxyl group; further, C10-C30 fatty alcohol can be selected from one or more of dodecanol, tridecanol, tetradecanol, pentadecanol, hexadecanol, heptadecanol, octadecanol, dodecandiol, tridecandiol, tetradecandiol, pentadecandiol, hexadecandiol, heptadecandiol, and octadecandiol; C1-C9 fatty alcohol can be selected from one or more of ethanol, propanol, butanol, pentanol, hexanol, heptanol, and octanol.

[0042] In the present application, fatty aldehyde refers to an aliphatic chain hydrocarbon compound or an aliphatic cyclic hydrocarbon compound substituted with an aldehyde group; further, C10-C30 fatty aldehyde can be selected from one or more of decanal, undecanal, dodecanal, tridecanal, tetradecanal, pentadecane, hexadecanal, heptadecanal, and octadecanal; C1-C9 fatty aldehyde can be selected from one or more of acetaldehyde, propanal, 2-methylpropanal, butyraldehyde, isobutyraldehyde, succinaldehyde, valeraldehyde, glutaraldehyde, hexadecane, heptadecanal, octanal, and nonanal.

[0043] In the present application, aliphatic amine refers to an aliphatic chain hydrocarbon compound or an aliphatic cyclic hydrocarbon compound substituted with an amino group, and "amino" refers to an amine derivative having a structural feature of the formula -N(X)2, wherein each "X" is independently H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted heterocyclic group, etc. Non-limiting types of amino groups include -NH2, -N(alkyl)2, -NH(alkyl), -N(cycloalkyl)2, -NH(cycloalkyl), -N(heterocyclyl)2, -NH(heterocyclyl), -N(aryl)2, -NH(aryl), -N(alkyl)(aryl), -N(alkyl)(heterocyclyl), -N(cycloalkyl)(heterocyclyl), -N(aryl)(heteroaryl), -N(alkyl)(heteroaryl), and the like; further, the C10-C30 fatty amine can be selected from one or more of oleylamine, n-decylamine, dioctylamine, trioctylamine, dodecylamine, myristicamine, palmitylamine, and stearylamine.

[0044] In the present application, the halogenated hydrocarbon refers to a cyclic hydrocarbon or a chain hydrocarbon in which one or more hydrogen atoms are replaced by halogen.

[0045] In the present application, the thiol-substituted C10-C30 aliphatic hydrocarbons may be selected from one or more of decyl mercaptan, undecanethiol, dodecanethiol, tridecanethiol, tetradecanethiol, pentadecanethiol, hexadecanethiol, heptadecanethiol, octadecanethiol, nonadecanethiol, and eicosanethiol; the thiol-substituted C1-C9 aliphatic hydrocarbons may be selected from one or more of ethanethiol, propyl mercaptan, butyl mercaptan, pentanethiol, hexanethiol, heptanethiol, and octanethiol.

[0046] In some embodiments, the nanoparticles include single structure quantum dots, core-shell structure quantum dots, perovskite semiconductor materials, first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides and metal nitrides.

[0047] The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of the II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdS One or more of dZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and Group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, One or more of SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, G One or more of aAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0048] The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor materials include one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0049] The metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, and the metal nitride includes P-type gallium nitride. When the nanoparticles are quantum dot materials, the spacing between quantum dots is reduced by applying an electric field, the probability of charge transition between quantum dots is increased, and the charge transfer performance of the quantum dot film is improved, and when applied to optoelectronic devices, the luminous efficiency of the device can be improved.

[0050] When the nanoparticles are electronic functional layer materials such as first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, applying an electric field reduces the thickness of the electronic functional material film, and when applied to optoelectronic devices, it can promote carrier movement, reduce resistance and improve device luminescence efficiency.

[0051] When the nanoparticles are hole functional layer materials such as second doped metal oxide particles, second undoped metal oxide particles, metal sulfides and metal nitrides, applying an electric field reduces the thickness of the hole functional material film, which helps to improve carrier conformity when applied to optoelectronic devices, thereby reducing the device turn-on voltage and increasing the luminous brightness.

[0052] In a second aspect, an embodiment of the present application provides a thin film, which is prepared using the above-mentioned thin film preparation method.

[0053] In a third aspect, an embodiment of the present application provides an optoelectronic device, including:

[0054] A first electrode and a second electrode arranged opposite to each other;

[0055] a functional layer, disposed between the first electrode and the second electrode;

[0056] Wherein, the functional layer includes a film prepared by the above-mentioned film preparation method, or the above-mentioned film.

[0057] In some embodiments, the first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode, the material of the doped metal oxide electrode includes indium doped tin oxide, fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide, magnesium doped zinc oxide, aluminum doped magnesium oxide, cadmium doped zinc oxide or more, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or

[0058] The hole functional layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro-TPD. ), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (N PB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole , poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide and metal nitride;

[0059] The metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V, the metal sulfide includes one or more of CuS, MoS3, and WS3, and the metal nitride includes P-type gallium nitride; and / or

[0060] The material of the electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials; the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3 Multiple, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor materials include one or more of InP and GaP, the IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS, and the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives; and / or

[0061] The material of the light-emitting layer includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials. The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe , HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, IV-VI group compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, Ga One or more of AlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n- 2NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2 + , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0062] In a fourth aspect, an embodiment of the present application provides a method for preparing a photoelectric device, and preparing the above-mentioned photoelectric device comprises the following steps:

[0063] Depositing hole injection layer material on the anode to obtain a hole injection layer;

[0064] Depositing a hole transport layer material on the hole injection layer to obtain a hole transport layer;

[0065] Mixing the nanoparticles as described above with an organic solvent to obtain a nanoparticle solution;

[0066] Depositing a nanoparticle solution on the hole transport layer, applying an electric field parallel to the hole transport layer to the deposited nanoparticle solution, and drying to obtain an excitation layer;

[0067] Depositing an electron transport layer material on the excitation layer to obtain an electron transport layer;

[0068] Depositing electron injection layer material on the electron transport layer to obtain an electron injection layer;

[0069] The cathode material is evaporated onto the electron injection layer to obtain the cathode.

[0070] Encapsulation.

[0071] In some embodiments, the method for preparing the optoelectronic device may also be:

[0072] Depositing electron injection layer material on the upper cathode to obtain an electron injection layer;

[0073] Depositing an electron transport layer material on the electron injection layer to obtain an electron transport layer;

[0074] Mixing the nanoparticles as described above with an organic solvent to obtain a nanoparticle solution;

[0075] Depositing a nanoparticle solution on the electron transport layer, applying an electric field parallel to the electron transport layer to the deposited nanoparticle solution, and drying to obtain an excitation layer;

[0076] Depositing hole transport layer material on the excitation layer to obtain a hole transport layer;

[0077] Depositing hole injection layer material on the hole transport layer to obtain a hole injection layer;

[0078] The anode material is evaporated onto the hole injection layer to obtain the anode.

[0079] Encapsulation.

[0080] The deposition method can be achieved by using technical means well known in the art, specifically:

[0081] The excitation layer can be formed by chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, coprecipitation and solution processing. The chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition and coprecipitation.

[0082] The hole transport layer can be realized by physical coating methods, such as thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method; solution processing methods such as spin coating, printing method, inkjet printing method, doctor blading method, printing method, dip pulling method, immersion method, spraying method, roll coating method, casting method, slit coating method, strip coating method.

[0083] The electron transport layer can be formed by chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, coprecipitation and solution processing.

[0084] When the hole injection layer and the electron injection layer are organic molecular compounds, all the methods listed above can be used; when they are inorganic molecular compounds, solution processing methods can be used.

[0085] The specific processing methods and processing conditions can refer to the common methods in the art and will not be described in detail here.

[0086] In a fifth aspect, an embodiment of the present application provides an electronic device, including the optoelectronic device as described above. The electronic device can be any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0087] Film Example 1

[0088] The present invention provides a thin film and a method for preparing the same. The method for preparing the thin film comprises the following steps:

[0089] S1. Weigh 20 mmol zinc acetate, 40 mmol oleic acid, and 20 ml octadecene in a 100 ml three-necked flask, treat at 80° C. under vacuum for 60 min, then switch to argon atmosphere and heat at 150° C. for 30 min, then heat to 330° C. to obtain zinc oleate; inject 1.3 mmol Se-DPP precursor solution into the zinc oleate, inject 0.77 mmol cadmium oleate after 2.5 min, and react at 330° C. for 120 min to obtain a ZnCdSe quantum dot core solution;

[0090] S2, weigh 3mmol zinc acetate, 6mmol oleic acid, and 27ml octadecene in a 100ml three-necked flask, add the above ZnCdSe quantum dot core solution, treat at 80°C and vacuum conditions for 60min, then switch to argon atmosphere and heat at 150°C for 30min, then heat to 330°C, add 3mmol zinc oleate and 3mmol Se-TOP, and obtain a ZnCdSe / ZnSe quantum dot solution;

[0091] S3. Add 8 mL 1-dodecanoic acid and 8 mL 1-butyric acid to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0092] S4. Provide a substrate, deposit a ZnCdSe / ZnSe quantum dot solution on the substrate, then apply an electric field parallel to the substrate to the deposited quantum dot solution with an electric field strength of 2 Kv / cm, and dry at 100° C. for 5 minutes to obtain a thin film.

[0093] Film Example 2

[0094] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0095] Replace S3 with: Add 8 mL 1-pentadecanol and 4 mL 1-butanol to the ZnCdSe / ZnSe quantum dot solution and react for 10 min;

[0096] S4 is replaced by: providing a substrate, depositing a ZnCdSe / ZnSe quantum dot solution on the substrate, then applying an electric field parallel to the substrate to the deposited quantum dot solution with an electric field strength of 2 Kv / cm, and drying at 150° C. for 30 min to obtain a thin film.

[0097] Film Example 3

[0098] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0099] Replace S3 with: Add 8 mL 1-octadecylamine and 2 mL 1-octylamine to the ZnCdSe / ZnSe quantum dot solution and react for 10 min;

[0100] S4 is replaced by: providing a substrate, depositing a ZnCdSe / ZnSe quantum dot solution on the substrate, then applying an electric field parallel to the substrate to the deposited quantum dot solution with an electric field strength of 7 Kv / cm, and drying at 130°C for 20 minutes to obtain a thin film.

[0101] Film Example 4

[0102] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0103] Replace S3 with: Add 12 mL of 1-chlorohexadecane and 4 mL of 1-chloropentane to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0104] Set the electric field strength in S4 to: 5Kv / cm.

[0105] Film Example 5

[0106] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0107] Replace S3 with: Add 8 mL 1-chlorododecane and 4 mL 1-chloropentane to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0108] Set the electric field strength in S4 to: 3Kv / cm.

[0109] Film Example 6

[0110] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0111] Replace S3 with: Add 8 mL 1-dodecanethiol and 8 mL 1-butanethiol to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0112] Set the electric field strength in S2 to: 3Kv / cm.

[0113] Film Example 7

[0114] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0115] Replace S3 with: Add 16 mL of 1-dodecylthiolate sodium to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0116] Film Example 8

[0117] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0118] Replace S3 with: Add 16 mL of 1-chlorohexadecane to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0119] Set the electric field strength in S4 to: 5Kv / cm.

[0120] Film Comparative Example 1

[0121] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0122] In step S4, no electric field is applied.

[0123] Film Comparative Example 2

[0124] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0125] Replace S3 with: Add 16 mL of dodecane to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0126] In step S4, no electric field is applied.

[0127] Film Comparative Example 3

[0128] The film and preparation method thereof provided in the embodiment of the present application are different from those in the film embodiment 1 in that:

[0129] Replace S3 with: Add 16 mL of dodecane to the ZnCdSe / ZnSe quantum dot solution and react for 10 min.

[0130] Film performance test

[0131] Films of film examples 1-8 and film comparison examples 1-3 were prepared on the hole injection layer of the single hole device. The structure of the single hole device is as follows:

[0132] ITO / PEDDOT:PSS / film / MoO x / Ag, the voltage of the film is detected by a detection device, and the results are shown in Table 1.

[0133] Table 1:

[0134]

[0135]

[0136] From Table 1 we can see that:

[0137] Compared with film comparison examples 1-3, the voltages of film embodiments 1-8 all decreased. The reason is that an electric field was applied to the films obtained from film embodiments 1-8 during the preparation process. The end groups of the long-chain alkyl groups on the surface of the quantum dots were affected by the electric field, causing the long-chain alkyl groups to lie flat and parallel to the substrate, that is, parallel to the hole injection layer, thereby reducing the distance between the quantum dots in the vertical direction within the layer, reducing the film thickness, increasing the probability of charge transition between quantum dots, enhancing the vertical charge transfer performance, and thereby reducing the voltage.

[0138] Furthermore, compared with thin film embodiment 4, thin film embodiment 8 has a lower voltage because the quantum dots in thin film embodiment 8 do not have a second ligand, which makes it impossible for the quantum dot particles to have a larger distance caused by the second ligand, thereby reducing the spacing between the quantum dots, reducing the film thickness, and ultimately reducing the voltage.

[0139] Photoelectric device embodiment 1

[0140] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device includes an anode 1, a hole transport layer 2, an excitation layer 3, an electron transport layer 4, and a cathode 5 stacked in sequence. The method for preparing the photoelectric device includes the following steps:

[0141] S1. Provide a substrate with an ITO anode having a thickness of 80 nm, ultrasonically clean the ITO-coated substrate with acetone and ethanol for 15 minutes, then clean it again with deionized water, then dry it on a hot plate at 150° C. for 10 minutes, and finally irradiate it with ultraviolet light for 20 minutes to improve the work function and surface energy of ITO;

[0142] S2, spin coating 8 mg / mL TFB at 3000 rpm for 30 seconds, followed by heating at 120 °C for 10 minutes to obtain a hole transport layer;

[0143] S3, preparing a thin film of thin film embodiment 1 on the hole transport layer, i.e., an excitation layer;

[0144] S4, spin coating 30 mg / mL ZnO-ethanol solution at a rotation speed of 3000 rpm for 30 seconds, followed by heating at 100 °C for 15 minutes to obtain an electron transport layer;

[0145] S5, through thermal evaporation, the vacuum degree is less than or equal to 3×10 -4 Pa, evaporate Ag at a rate of 1 angstrom / second for 200 seconds to obtain a cathode with a thickness of 20 nm.

[0146] Photoelectric Device Examples 2-8

[0147] The difference between the optoelectronic device embodiment 2-8 and the optoelectronic device embodiment 1 is that the excitation layer prepared in step S3 is the thin film in the thin film embodiment 2-8.

[0148] Photoelectric device comparative examples 1-3

[0149] The difference between the optoelectronic device comparative examples 1-3 and the optoelectronic device embodiment 1 is that the excitation layer prepared in step S3 is the thin film in the thin film comparative examples 1-3.

[0150] Photoelectric device performance test

[0151] Detect the luminous efficiency and voltage of the devices obtained from the optoelectronic device embodiments 1-8 and the optoelectronic device comparative examples 1-3. Test method for CE luminous efficiency: Connect the above device to a current-voltage tester to measure its current and voltage. Connect the above device to a spectrometer to measure its luminous spectrum. Calculate the CE luminous efficiency, i.e., the ratio of the electron injection rate to the photon emission rate, based on the measurement results. The results are shown in Table 2.

[0152] Table 2:

[0153]

[0154] From Table 2 we can see that:

[0155] Compared with the optoelectronic device comparative examples 1-3, the luminous efficiency of optoelectronic device embodiments 1-8 is in an upward state, indicating that the thin film obtained after applying the electric field improves the charge transfer performance by reducing the thickness of the film layer, thereby improving the luminous efficiency of the device. The luminous efficiency is increased by up to 40% and by as little as 10%. Among them, the luminous efficiency of optoelectronic device embodiments 3 and 8 is significantly better than that of other embodiments, which may be because the increase in the mass of the first ligand and the relative decrease or even zero mass of the second ligand make the excitation layer have a thinner thickness, thereby improving the charge transfer performance and improving the luminous efficiency. At the same time, the voltage of optoelectronic device embodiments 1-8 is in a downward state, because: the thinning of the excitation layer makes the thickness of the optoelectronic device thinner, thereby reducing the voltage.

[0156] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a thin film, characterized in that: Includes steps: A nanoparticle solution is provided, the nanoparticle solution is deposited into a liquid film, an electric field parallel to the surface of the nanoparticle solution is applied to the liquid film, and the liquid film is dried to obtain a thin film.

2. The method for preparing a thin film according to claim 1, characterized in that: The concentration of the nanoparticle solution is 5 mg / mL-100 mg / mL; And / or, the drying temperature is 80°C-180°C, and the drying time is 5min-60min; And / or, the nanoparticle solution comprises nanoparticles, ligands connected to the surfaces of the nanoparticles, and a solvent, wherein the ligands comprise a first ligand, and the first ligand is selected from a C10-C30 aliphatic compound; And / or, the electric field strength is 0.5Kv / cm-10Kv / cm.

3. The method for preparing a thin film according to claim 2, characterized in that: The molar ratio of the nanoparticles to the ligand is (4-19):1; And / or, the solvent comprises an organic solvent.

4. The method for preparing a thin film according to claim 2, characterized in that: The ligand further comprises a second ligand, and the second ligand is selected from C1-C9 aliphatic compounds.

5. The method for preparing a thin film according to claim 4, characterized in that: The molar ratio of the first ligand to the second ligand is (1-4): 1; and / or, the C10-C30 aliphatic compound is selected from one or more of C10-C30 fatty acids, C10-C30 fatty alcohols, C10-C30 fatty aldehydes, C10-C30 fatty amines, C10-C30 halogenated hydrocarbons, and thiol-substituted C10-C30 aliphatic hydrocarbons; And / or, the C1-C9 aliphatic compound is selected from one or more of C1-C9 fatty acids, C1-C9 fatty alcohols, C1-C9 fatty aldehydes, C1-C9 fatty amines, C1-C9, halogenated hydrocarbons, and thiol-substituted C1-C9 aliphatic hydrocarbons.

6. The method for preparing a thin film according to any one of claims 1 to 5, characterized in that: The nanoparticles include one or more of single structure quantum dots, core-shell structure quantum dots, perovskite semiconductor materials, first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, second doped metal oxide particles, second non-doped metal oxide particles, metal sulfides and metal nitrides; The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, One or more of CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, S One or more of nPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and the III-V group compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl One or more of GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; The metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V, the metal sulfide includes one or more of CuS, MoS3, and WS3, and the metal nitride includes P-type gallium nitride.

7. A film, characterized in that: The film is prepared by the method for preparing the film as described in any one of claims 1 to 6.

8. A photoelectric device, characterized in that: include: A first electrode and a second electrode arranged opposite to each other; a functional layer, disposed between the first electrode and the second electrode; Wherein, the functional layer comprises a film prepared by the method for preparing a film as described in any one of claims 1 to 6, or a film as described in claim 7.

9. The optoelectronic device according to claim 8, characterized in that: The functional layer includes a hole functional layer, a light emitting layer and an electron functional layer which are stacked in sequence; Wherein, at least one of the hole functional layer, the light-emitting layer or the electron functional layer is prepared by the thin film preparation method according to any one of claims 1 to 6.

10. The optoelectronic device according to claim 9, characterized in that: The first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / A g / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or The material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro) -TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrolidone , poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides and metal nitrides; the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, and the metal nitride includes P-type gallium nitride; and / or, The material of the electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials, and the inorganic electronic functional materials include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials; the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3 The doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS, and the organic electronic functional material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives; and / or The material of the light-emitting layer includes one or more of single-structure quantum dots, core-shell quantum dots and perovskite semiconductor materials. The material of the single-structure quantum dots, the core material of the core-shell quantum dots and the shell material of the core-shell quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnS Te, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl One or more of GaNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2 + Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

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