Preparation method of high-conductivity DLC film

Abstract

The invention discloses a preparation method of a high-conductivity DLC film. The preparation method comprises the following steps: preparing an original DLC film; depositing a pretreatment layer on the surface of the original DLC film to obtain a treated DLC film; wherein the pretreatment layer is made of a silicon oxide material. By adopting the technical scheme of the invention, the conductivity of the DLC film can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of thin film preparation, and in particular to a method for preparing a DLC film with high conductivity. Background Art

[0002] DLC (Diamond-like Carbon) film is a thin film composed of carbon and hydrogen elements. It has excellent mechanical properties, chemical stability and biocompatibility. Therefore, it is widely used in many fields, such as high-speed cutting, automobile and machine parts.

[0003] In some special application scenarios, the conductivity of the DLC film is required to be high. Therefore, improving the conductivity of the DLC film is an important technical requirement. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a method for preparing a DLC film with high conductivity, which can improve the conductivity of the DLC film.

[0005] In order to achieve the above object, an embodiment of the present invention provides a method for preparing a highly conductive DLC film, comprising:

[0006] Preparing a pristine DLC film;

[0007] A pretreatment layer is deposited on the surface of the original DLC film to obtain a treated DLC film; wherein the material of the pretreatment layer is silicon oxide material.

[0008] Further, the depositing of a pre-treatment layer on the surface of the original DLC film specifically comprises:

[0009] A pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

[0010] Furthermore, the method of depositing a pre-treatment layer on the surface of the original DLC film by a chemical vapor deposition method specifically includes:

[0011] placing the original DLC film in oxygen plasma for surface cleaning;

[0012] The cleaned original DLC film is placed in a vacuum chamber, and silane and oxygen are introduced into the vacuum chamber;

[0013] The vacuum chamber is heated to 700° C., and a pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

[0014] Furthermore, the flow rate of the silane is 0.05 sccm.

[0015] Furthermore, the flow rate of the oxygen gas is 1.0 sccm.

[0016] Furthermore, the deposition time of the pre-treatment layer is 60 minutes.

[0017] Furthermore, the thickness of the pre-treatment layer is 500 nm.

[0018] Compared with the prior art, the embodiment of the present invention provides a method for preparing a DLC film with high conductivity, wherein an original DLC film is first prepared, and then a pretreatment layer is deposited on the surface of the original DLC film to obtain a treated DLC film; wherein the material of the pretreatment layer is a silicon oxide material. The embodiment of the present invention can improve the conductivity of the DLC film. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a flow chart of a preferred embodiment of a method for preparing a highly conductive DLC film provided by the present invention. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0021] The present invention provides a method for preparing a highly conductive DLC film. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a highly conductive DLC film provided by the present invention, wherein the method comprises steps S11 to S12:

[0022] Step S11, preparing an original DLC film;

[0023] Step S12, depositing a pretreatment layer on the surface of the original DLC film to obtain a treated DLC film; wherein the material of the pretreatment layer is silicon oxide material.

[0024] In the specific implementation, an original DLC film is first prepared, wherein the original DLC film can be prepared by an existing commonly used preparation method, for example, an original DLC film with a desired chemical composition and thickness is prepared by a chemical vapor deposition method such as PECVD (plasma enhanced chemical vapor deposition); thereafter, a pretreatment layer is deposited on the surface of the prepared original DLC film, and the material of the pretreatment layer is silicon oxide material, and a treated DLC film is obtained accordingly, wherein the treated DLC film is a highly conductive DLC film.

[0025] It should be noted that by applying a pretreatment layer to the surface of the DLC film, the conductivity of the DLC film can be significantly improved. During the preparation process, the pretreatment layer can be controlled to have many different thicknesses, and different thicknesses correspond to different conductivities. Since the thickness of the pretreatment layer can be freely adjusted, pretreatment layers of different thicknesses can be customized according to specific applications and DLC film requirements, thereby adjusting the conductivity enhancement effect of the DLC film according to demand.

[0026] It should be noted that the embodiment of the present invention uses a pre-treatment layer made of silicon oxide material, and the silicon oxide material can be an amorphous silicon material called amorphous silica.

[0027] It should be noted that the advantage of the pre-treatment layer is that it can be added to the DLC film in a controllable manner at low cost and can be applied on ordinary PECVD equipment.

[0028] It should be noted that the embodiments of the present invention can be used to manufacture various electronic devices and optoelectronic devices such as LEDs and solar cells to improve the conductivity of the DLC film, and the pre-treatment layer can be used with any DLC film material, so it has broad application prospects.

[0029] Furthermore, after the highly conductive DLC film is prepared, the conductivity of the film can be measured using the DLC AFT (alternating current electric field test) technique, thereby obtaining a more accurate conductivity measurement result.

[0030] In another preferred embodiment, depositing a pre-treatment layer on the surface of the original DLC film specifically comprises:

[0031] A pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

[0032] Specifically, in combination with the above embodiments, when depositing the pretreatment layer on the surface of the original DLC film, a chemical vapor deposition method can also be used. For example, a pretreatment layer can be deposited on the surface of the original DLC film by a chemical vapor deposition method such as PECVD (plasma enhanced chemical vapor deposition).

[0033] As a preferred solution, the method of depositing a pre-treatment layer on the surface of the original DLC film by a chemical vapor deposition method specifically includes:

[0034] placing the original DLC film in oxygen plasma for surface cleaning;

[0035] The cleaned original DLC film is placed in a vacuum chamber, and silane and oxygen are introduced into the vacuum chamber;

[0036] The vacuum chamber is heated to 700° C., and a pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

[0037] Specifically, in combination with the above embodiments, when the pretreatment layer is actually deposited on the surface of the original DLC film by the chemical vapor deposition method, the prepared original DLC film can be first placed in oxygen plasma for surface cleaning treatment, and then, the cleaned original DLC film is placed in a vacuum chamber, and silane and oxygen are introduced into the vacuum chamber. Then, the vacuum chamber is heated to a temperature of 700°C to deposit the pretreatment layer on the surface of the original DLC film by the chemical vapor deposition method.

[0038] As a preferred solution, the flow rate of the silane is 0.05 sccm.

[0039] Specifically, in combination with the above embodiment, in the process of depositing the pretreatment layer on the surface of the original DLC film by the chemical vapor deposition method, the flow rate of silane introduced into the vacuum chamber is 0.05 sccm.

[0040] As a preferred solution, the flow rate of the oxygen gas is 1.0 sccm.

[0041] Specifically, in combination with the above embodiment, in the process of depositing the pretreatment layer on the surface of the original DLC film by the chemical vapor deposition method, the flow rate of oxygen introduced into the vacuum chamber is 1.0 sccm.

[0042] As a preferred solution, the deposition time of the pre-treatment layer is 60 minutes.

[0043] Specifically, in combination with the above embodiment, in the process of actually depositing the pre-treatment layer on the surface of the original DLC film by the chemical vapor deposition method, the deposition time of the pre-treatment layer is 60 minutes.

[0044] As a preferred solution, the thickness of the pre-treatment layer is 500 nm.

[0045] Specifically, in combination with the above embodiment, under the conditions of a silane flow rate of 0.05 sccm, an oxygen flow rate of 1.0 sccm, a temperature in the reaction chamber of 700° C., and a reaction time of 60 minutes, the thickness of the prepared pretreatment layer is 500 nanometers.

[0046] In combination with all the above embodiments, the implementation process of the present scheme is described below through a specific embodiment, including: (1) preparing an original DLC film, wherein the original DLC film can be prepared by an existing commonly used preparation method, for example, preparing an original DLC film with a desired chemical composition and thickness by a chemical vapor deposition method such as PECVD; (2) placing the prepared original DLC film in an oxygen plasma for surface cleaning; (3) placing the cleaned original DLC film in a vacuum chamber, and introducing silane with a flow rate of 0.05 sccm and oxygen with a flow rate of 1.0 sccm into the vacuum chamber; (4) heating the vacuum chamber to a temperature of 700°C, and depositing a pretreatment layer on the surface of the original DLC film by a chemical vapor deposition method to obtain a treated DLC film accordingly, wherein the material of the pretreatment layer is silicon oxide material, the deposition time of the pretreatment layer is 60 min, and the thickness of the pretreatment layer is 500 nm.

[0047] In summary, the method for preparing a highly conductive DLC film provided by the embodiment of the present invention first prepares an original DLC film, and then deposits a pretreatment layer on the surface of the original DLC film to obtain a treated DLC film; wherein the material of the pretreatment layer is a silicon oxide material. The embodiment of the present invention can improve the conductivity of the DLC film.

[0048] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for preparing a highly conductive DLC film, characterized in that: include: Preparing a pristine DLC film; A pretreatment layer is deposited on the surface of the original DLC film to obtain a treated DLC film; wherein the material of the pretreatment layer is silicon oxide material.

2. The method for preparing a highly conductive DLC film according to claim 1, wherein: Depositing a pre-treatment layer on the surface of the original DLC film specifically comprises: A pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

3. The method for preparing a highly conductive DLC film according to claim 2, wherein: The method of depositing a pre-treatment layer on the surface of the original DLC film by a chemical vapor deposition method specifically includes: placing the original DLC film in oxygen plasma for surface cleaning; The cleaned original DLC film is placed in a vacuum chamber, and silane and oxygen are introduced into the vacuum chamber; The vacuum chamber is heated to 700° C., and a pre-treatment layer is deposited on the surface of the original DLC film by a chemical vapor deposition method.

4. The method for preparing a highly conductive DLC film according to claim 3, wherein: The flow rate of the silane is 0.05 sccm.

5. The method for preparing a highly conductive DLC film according to claim 3, wherein: The flow rate of the oxygen gas is 1.0 sccm.

6. The method for preparing a highly conductive DLC film according to claim 3, wherein: The deposition time of the pre-treatment layer is 60 min.

7. The method for preparing a highly conductive DLC film according to claim 3, wherein: The thickness of the pre-treatment layer is 500 nm.

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