A device for detecting insulation performance of semiconductor insulating layer

Abstract

The present invention relates to the technical field of detection devices, and discloses a device for detecting the insulation performance of a semiconductor insulating layer, comprising a base, wherein two support plates are symmetrically fixedly mounted on the upper surface of the base, and a turntable is rotatably mounted between the two support plates. The present invention drives the conductive sheet at the L-shaped guide plate groove to contact the guide column by moving the fixed plates closer to each other, thereby energizing the heating wire inside the melting cylinder, and the heating wire will instantly heat up. The heating of the heating wire can instantly melt the colored soy wax particles inside the melting cylinder, and the melted colored soy wax particles will become liquid. The colored soy wax liquid will flow from the leak hole into the holes of the insulating layer, and the colored soy wax particles will remain in the holes. The device can detect whether holes are formed in the insulating layer at the pins of the MOS transistor during casting, without the need for operators to manually detect and mark them one by one, which greatly improves the efficiency of detection during batch detection.

Description

Technical Field

[0001] The present invention relates to the technical field of detection devices, and in particular to a device for detecting the insulation performance of a semiconductor insulation layer. Background Art

[0002] MOS transistors (metal oxide semiconductor field effect transistors) are a common type of field effect transistor (FET) widely used in electronic devices, especially in digital and analog circuits. After production, MOS transistors need to be cast with a brown substance on their surface, usually an encapsulation resin (such as epoxy resin). This substance protects the MOS transistor from external environmental influences such as moisture, dust, and chemical contamination, thereby increasing the reliability and service life of the component. When the MOS transistor is encapsulated with resin, the gap between the pins and the mold retaining wall is small, making it difficult for the encapsulation resin to flow between the pins and the mold retaining wall. As a result, the pin area cannot be covered by the encapsulation resin, forming a hole, causing the pin to be exposed to the outside world. Therefore, a detection device is required to detect the insulation of the insulating layer at the pin position.

[0003] When using existing detection devices, operators are required to manually pick up MOS transistors one by one, and then directly observe with the naked eye whether there are holes in the insulation layer at the pin position. After checking for holes, they must manually mark them. Manual detection and marking are slow, which greatly reduces the detection efficiency when testing MOS transistors in batches. Summary of the Invention

[0004] The purpose of the present invention is to solve the shortcomings of the prior art and to propose an insulation performance detection device for a semiconductor insulation layer.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] The cam is fixedly mounted on a top surface of the base, and a rotating disk is rotatably mounted between the two supporting plates. A plurality of notches are equidistantly provided on the circumferential outer surface of the rotating disk, and a MOS transistor is arranged on the upper surface of the notches. A bracket is fixedly mounted between the top ends of the two supporting plates, and a T-shaped groove is provided on the upper surface of the bracket, and two T-shaped sliders are symmetrically slidably mounted on the inner walls of the T-shaped grooves. A fixing plate is fixedly mounted on the lower surfaces of the two T-shaped sliders, and a melting cylinder is slidably inserted on the outer surface of the fixing plate near the bottom end. The inner wall of the melting cylinder is hollow, and a heating wire is fixedly mounted between the inner walls of the opposite ends of the melting cylinder, and an end of the melting cylinder away from the MOS transistor passes through the outer surface of the fixing plate and is fixedly mounted. A third tension spring is sleeved on the outer surface of the melting cylinder, and one end of the third tension spring is fixedly mounted on the outer surface of the circular plate, and the other end of the third tension spring is fixedly mounted on the outer surface of the fixing plate.

[0007] As a further solution of the present invention, a plurality of leakage holes are penetrated through one end of the melting cylinder near the MOS transistor, and the end of the heating wire near the MOS transistor passes through the outer surface of the melting cylinder and is flush with its end face. A material storage barrel is fixedly installed on the outer surface of the melting cylinder near the top, and the material storage barrel is connected to the interior of the melting cylinder. An L-shaped guide plate is fixedly installed on the outer surface of the fixed plate near the bottom end.

[0008] As a further solution of the present invention, a groove is provided at one end of the L-shaped guide plate close to the MOS transistor, a conductive sheet is provided on the inner wall of the groove, a battery power supply is provided on the outer surface of the L-shaped guide plate, the conductive sheet is electrically connected to the battery power supply, the other end of the heating wire passes through the other end of the melting cylinder and is electrically connected to a wire, and the wire is electrically connected to the battery power supply.

[0009] As a further solution of the present invention, two limit plates are symmetrically fixedly installed on the upper surface of the notch, the MOS transistor is arranged between the two limit plates, a rotating plate is rotatably installed on the side of the notch, a pressure plate is fixedly installed on the bottom end of the rotating plate, the pressure plate is arranged on the upper surface of the MOS transistor, and a second tension spring is rotatably installed on the outer surface of the rotating plate close to the MOS transistor, and the other end of the second tension spring is rotatably connected to the outer surface of the notch.

[0010] As a further solution of the present invention, two pins are symmetrically provided on the outer surface of the end of the MOS transistor away from the limit plate, and two through holes are symmetrically opened on the upper surface of the pressure plate, and the inner walls of the two through holes are slidably installed with guide pillars, and the bottom ends of the two guide pillars pass through the lower surface of the pressure plate and abut against the outer surfaces of the two pins, and the outer surfaces of the two guide pillars near the top are fixedly installed with blocking plates, and the outer surfaces of the guide pillars are sleeved with a first tension spring, the top of the first tension spring is fixedly connected to the lower surface of the blocking plate, and the bottom end of the first tension spring is fixedly connected to the upper surface of the pressure plate, and the conductive sheet abuts against the outer surface of the guide pillar near the top.

[0011] As a further solution of the present invention, a fixed plate is fixedly installed on the outer surface of one of the support plates close to the turntable, and a circular arc protrusion is provided on the circumferential outer surface of the fixed plate. The fixed plate, turntable and circular arc protrusion are arranged at the same center of a circle, and a rotating arm is fixedly installed on one end of the rotating mounting fulcrum of the rotating plate, and a sliding column is fixedly installed on the bottom end of the rotating arm, and the sliding column is abutted against the outer surface of the fixed plate.

[0012] As a further solution of the present invention, a shell is fixedly installed on the outer surface of one of the support plates opposite to the turntable, a driven sheave is rotatably installed on the support plate close to the outer surface of the shell, and an active dial is also rotatably installed on the support plate close to the outer surface of the shell, the active dial is engaged with the driven sheave, a driving motor is fixedly installed on the outer surface of the shell, the output end of the driving motor passes through the outer surface of the shell and is fixedly installed at the rotation center of the active dial, and a plurality of radial grooves are equidistantly provided on the outer surface of the driven sheave in the circumferential direction, and the number of the radial grooves is set to the same as the number of the notches.

[0013] As a further solution of the present invention, two support blocks are symmetrically fixedly installed on the upper surface of the bracket, a rotating wheel is rotatably installed between the two support blocks, two driving grooves are symmetrically opened on the outer surface of the rotating wheel, and a driving column is fixedly installed on the upper surface of the two T-shaped sliders, and the driving column is slidably installed on the inner wall of the driving groove. One end of the rotating wheel passes through the outer surface of the support block and is fixedly installed with a second pulley, and the output end of the driving motor is fixedly installed with a first pulley, and the outer surfaces of the first pulley and the second pulley are provided with belts.

[0014] As a further solution of the present invention, a compression cylinder is fixedly installed on the outer surface of the bottom end of the fixed plate close to the MOS transistor side, and an air nozzle is fixedly installed on the outer surface of one end of the compression cylinder, and the air nozzle is arranged below the melting cylinder. A connecting rod is fixedly installed on the outer surface of the circular plate, and a push rod is fixedly installed on the bottom end of the connecting rod. The other end of the push rod passes through the outer surface of the fixed plate and is slidably installed with it. A compression plate is fixedly installed on the other end of the push rod, and the compression plate is slidably installed on the inner wall of the compression cylinder. A limiting protrusion is provided on the circumferential outer surface of the melting cylinder, and a limiting groove is provided on the inner wall of the fixed plate to match the limiting protrusion. The limiting protrusion is slidably installed on the inner wall of the limiting groove.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] 1. As the fixed plates move closer to each other, the L-shaped guide plate moves closer to the guide post. The conductive sheet at the groove of the L-shaped guide plate contacts the guide post, thereby energizing the heating wire inside the melting cylinder. The heating wire instantly heats up, and the heated heating wire instantly melts the colored soy wax particles inside the melting cylinder. The melted colored soy wax particles turn into liquid, which flows from the leak hole into the holes in the insulation layer. Colored soy wax particles will remain in the holes. This device can detect whether holes are formed in the insulation layer at the pins of the MOS transistor during casting, eliminating the need for operators to manually detect and mark each one, greatly improving the efficiency of batch testing.

[0017] 2. The driving motor drives the active dial to rotate, and the active dial drives the driven groove wheel to rotate intermittently, and the driven groove wheel drives the turntable to rotate intermittently. When the turntable rotates, the sliding post is driven by the rotating arm to slide along the outer surface of the circumference of the fixed plate. Due to the force of the second tension spring, the sliding post slides down from the arc protrusion, and the rotating plate is driven by the rotating arm to move close to the MOS transistor. The rotating plate drives the pressure plate to firmly press on the upper surface of the MOS transistor. The position of the MOS transistor can be quickly fixed through this device, which is convenient for subsequent detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the overall structure of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0019] Figure 2 This is a rear structural schematic diagram of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0020] Figure 3 This is a schematic diagram of the turntable structure of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0021] Figure 4This is a schematic diagram of a driven sheave of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0022] Figure 5 A schematic diagram of a rotating wheel of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0023] Figure 6 A schematic diagram of a driving column of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0024] Figure 7 This is a schematic cross-sectional view of a melting cylinder of a device for detecting the insulation performance of a semiconductor insulation layer proposed by the present invention;

[0025] Figure 8 A schematic diagram of a driving slot of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0026] Figure 9 for Figure 2 A partial enlarged schematic diagram in the middle;

[0027] Figure 10 This is a schematic diagram of the unfolding of the rotating wheel of the device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention.

[0028] In the figure: 1. base; 2. support plate; 3. turntable; 4. notch; 401. rotating plate; 402. limit plate; 403. MOS transistor; 404. pressure plate; 405. guide column; 406. baffle; 407. first tension spring; 408. second tension spring; 409. rotating arm; 410. slide column; 5. fixed plate; 501. arc protrusion; 6. bracket; 7. housing; 8. driving motor; 9. active dial; 10. driven sheave; 11. first pulley; 1 2. Belt; 13. Second pulley; 14. Support block; 15. Rotating wheel; 16. Driving groove; 17. Driving column; 18. T-shaped slider; 19. T-shaped slide; 20. Fixed plate; 21. L-shaped guide plate; 22. Wire; 23. Battery power supply; 24. Compression cylinder; 25. Air nozzle; 26. Melting cylinder; 27. Storage barrel; 28. Round plate; 29. Third tension spring; 30. Push rod; 31. Compression plate; 32. Heating wire; 33. Limiting protrusion; 34. Leak hole. DETAILED DESCRIPTION

[0029] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with specific implementation methods.

[0030] In the description of the present invention, it should be noted that the terms "upper," "lower," "inner," "outer," "front end," "rear end," "both ends," "one end," "the other end," and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0031] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "provided with," "connected," etc., should be understood in a broad sense. For example, "connected" may refer to a fixed connection, a detachable connection, or an integral connection; it may refer to a mechanical connection or an electrical connection; it may refer to a direct connection or an indirect connection through an intermediate medium; it may refer to internal communication between two components. Those skilled in the art will be able to understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0032] Reference Figures 1-10A device for detecting the insulation performance of a semiconductor insulating layer comprises a base 1, two supporting plates 2 are symmetrically fixedly mounted on the upper surface of the base 1, a turntable 3 is rotatably mounted between the two supporting plates 2, a plurality of notches 4 are equidistantly opened on the circumferential outer surface of the turntable 3, a MOS transistor 403 is arranged on the upper surface of the notch 4, a bracket 6 is fixedly mounted between the tops of the two supporting plates 2, a T-shaped slide 19 is opened on the upper surface of the bracket 6, two T-shaped sliders 18 are symmetrically slidably mounted on the inner wall of the T-shaped slide 19, a fixing plate 20 is fixedly mounted on the lower surface of each of the two T-shaped sliders 18, and a melting plate is slidably inserted into the outer surface of the fixing plate 20 near the bottom end. The inner wall of the melting cylinder 26 is hollow, and a heating wire 32 is fixedly installed between the inner walls of the opposite ends of the melting cylinder 26. The end of the melting cylinder 26 away from the MOS transistor 403 passes through the outer surface of the fixed plate 20 and is fixedly installed with a circular plate 28. The outer surface of the melting cylinder 26 is sleeved with a third tension spring 29. One end of the third tension spring 29 is fixedly installed with the outer surface of the circular plate 28, and the other end of the third tension spring 29 is fixedly installed with the outer surface of the fixed plate 20. A plurality of leakage holes 34 are opened through the end of the melting cylinder 26 close to the MOS transistor 403. The end of the heating wire 32 close to the MOS transistor 403 passes through the outer surface of the melting cylinder 26. The surface is flush with its end face, and a storage barrel 27 is fixedly installed on the outer surface of the melting cylinder 26 near the top, and the storage barrel 27 is connected to the interior of the melting cylinder 26. An L-shaped guide plate 21 is fixedly installed on the outer surface of the fixing plate 20 near the bottom side, and a groove is provided at one end of the L-shaped guide plate 21 near the MOS transistor 403. A conductive sheet is provided on the inner wall of the groove, and a battery power supply 23 is provided on the outer surface of the L-shaped guide plate 21. The conductive sheet is electrically connected to the battery power supply 23. The other end of the heating wire 32 passes through the other end of the melting cylinder 26 and is electrically connected to the wire 22. The wire 22 is electrically connected to the battery power supply 23. The MOS transistor 403 is away from the limit Two pins are symmetrically provided on the outer surface of one end of the positioning plate 402, and two through holes are symmetrically provided on the upper surface of the pressure plate 404. The inner walls of the two through holes are slidably installed with guide pillars 405, and the bottom ends of the two guide pillars 405 pass through the lower surface of the pressure plate 404 and abut against the outer surfaces of the two pins. A blocking piece 406 is fixedly installed on the outer surface of the two guide pillars 405 near the top, and a first tension spring 407 is sleeved on the outer surface of the guide pillar 405. The top of the first tension spring 407 is fixedly connected to the lower surface of the blocking piece 406, and the bottom end of the first tension spring 407 is fixedly connected to the upper surface of the pressure plate 404, and the conductive sheet abuts against the outer surface of the guide pillar 405 near the top.

[0033] The two fixed plates 20 are driven to move toward or away from each other intermittently by the two T-shaped sliders 18. When the two fixed plates 20 move toward each other, the melting cylinder 26 is driven to move toward the MOS transistor 403, so that the tip of the melting cylinder 26 is pressed against the insulating layer of the MOS transistor 403 near the pin. If there is a hole in the insulating layer near the pin of the MOS transistor 403, the tip of the melting cylinder 26 will press against the outer surface of the pin inside the insulating layer. At the same time, the fixed plates 20 move toward each other, which drives the L-shaped guide plate 21 to move toward the guide post 405. The conductive sheet at the groove of the L-shaped guide plate 21 will contact the guide post 405, thereby energizing the heating wire 32 inside the melting cylinder 26, and the heating wire 32 will instantly rise. Temperature, the colored soy wax particles inside the melting cylinder 26 can be melted instantly by the heating wire 32, and the melted colored soy wax particles will become liquid and expand in volume. Since the colored soy wax particles inside the storage barrel 27 melt slowly, the colored soy wax liquid will flow from the leak hole 34 into the holes in the insulating layer, and colored soy wax particles will remain in the holes. When there are no holes in the insulating layer, the tip of the melting cylinder 26 will not press against the pin of the MOS transistor 403, and the heating wire 32 will not be powered on and heated. Through this device, it is possible to detect whether holes are formed in the insulating layer at the pin of the MOS transistor 403 during pouring, without the need for operators to manually detect and mark them one by one, which greatly improves the efficiency of detection in batch detection.

[0034] In this embodiment, two limit plates 402 are symmetrically fixedly installed on the upper surface of the notch 4, and the MOS transistor 403 is arranged between the two limit plates 402. A rotating plate 401 is rotatably installed on the side of the notch 4, and a pressure plate 404 is fixedly installed on the bottom end of the rotating plate 401. The pressure plate 404 is arranged on the upper surface of the MOS transistor 403. A second tension spring 408 is rotatably installed on the outer surface of the rotating plate 401 close to the MOS transistor 403. The other end of the second tension spring 408 is rotatably connected to the outer surface of the notch 4. A fixed disk 5 is fixedly installed on the outer surface of one of the support plates 2 close to the turntable 3. An arc protrusion 501 is provided on the circumferential outer surface of the fixed disk 5. The fixed disk 5, the turntable 3 and the arc protrusion 501 are arranged at the same center of the circle. A rotating arm 409 is fixedly installed at one end of the rotating mounting fulcrum of the plate 401, and a sliding post 410 is fixedly installed at the bottom end of the rotating arm 409. The sliding post 410 is against the outer surface of the fixed disk 5. A shell 7 is fixedly installed on the outer surface of one of the support plates 2 opposite to the turntable 3. A driven sheave 10 is rotatably installed on the outer surface of the support plate 2 close to the outer surface of the shell 7. An active dial 9 is also rotatably installed on the outer surface of the support plate 2 close to the outer surface of the shell 7. The active dial 9 is engaged with the driven sheave 10. A driving motor 8 is fixedly installed on the outer surface of the shell 7. The output end of the driving motor 8 passes through the outer surface of the shell 7 and is fixedly installed at the rotation center of the active dial 9. A plurality of radial grooves are equidistantly provided on the outer surface of the driven sheave 10 in the circumferential direction. The number of radial grooves is set the same as the number of notches 4.

[0035] The driving motor 8 drives the active dial 9 to rotate, and the active dial 9 drives the driven groove wheel 10 to rotate intermittently, and the driven groove wheel 10 drives the turntable 3 to rotate intermittently. When the turntable 3 rotates, the sliding post 410 is driven to slide along the circumferential outer surface of the fixed disk 5 through the rotating arm 409. Due to the force of the second tension spring 408, the sliding post 410 slides down from the arc protrusion 501, and then drives the rotating plate 401 to move close to the MOS transistor 403 through the rotating arm 409. The rotating plate 401 drives the pressure plate 404 to firmly press on the upper surface of the MOS transistor 403. Through this device, the position of the MOS transistor 403 can be quickly fixed, which is convenient for subsequent detection.

[0036] In this embodiment, two support blocks 14 are symmetrically fixedly installed on the upper surface of the bracket 6, and a rotating wheel 15 is rotatably installed between the two support blocks 14. Two driving grooves 16 are symmetrically opened on the outer surface of the rotating wheel 15. The upper surfaces of the two T-shaped sliders 18 are fixedly installed with driving columns 17. The driving columns 17 are slidably installed with the inner walls of the driving grooves 16. One end of the rotating wheel 15 passes through the outer surface of the support block 14 and is fixedly installed with a second pulley 13. The output end of the drive motor 8 is fixedly installed with a first pulley 11. The outer surfaces of the first pulley 11 and the second pulley 13 are provided with a belt 12. The outer surface of the bottom end of the fixed plate 20 near the MOS transistor 403 side A compression cylinder 24 is fixedly installed on the surface, and an air nozzle 25 is fixedly installed on the outer surface of one end of the compression cylinder 24. The air nozzle 25 is arranged below the melting cylinder 26. A connecting rod is fixedly installed on the outer surface of the circular plate 28, and a push rod 30 is fixedly installed on the bottom end of the connecting rod. The other end of the push rod 30 passes through the outer surface of the fixed plate 20 and is slidably installed with it. A compression plate 31 is fixedly installed on the other end of the push rod 30. The compression plate 31 is slidably installed with the inner wall of the compression cylinder 24. A limiting protrusion 33 is provided on the circumferential outer surface of the melting cylinder 26, and a limiting groove matching the limiting protrusion 33 is provided on the inner wall of the fixing plate 20. The limiting protrusion 33 is slidably installed with the inner wall of the limiting groove.

[0037] The first pulley 11 is driven to rotate by the driving motor 8, and the first pulley 11 drives the second pulley 13 to rotate through the belt 12, and the second pulley 13 drives the rotating wheel 15 to rotate. The rotating wheel 15 drives the two T-shaped sliders 18 to intermittently move closer to or away from each other through the cooperation of the two driving grooves 16 and the driving column 17. When the two fixed plates 20 move away from each other, the melting cylinder 26 is reset by the force of the third tension spring 29, and the melting cylinder 26 drives the push rod 30 to move close to the air nozzle 25 through the circular plate 28 and the connecting rod. The push rod 30 presses the air inside the compression cylinder 24 through the compression plate 31 and is ejected from the air nozzle 25. The air ejected from the air nozzle 25 will blow on the tip of the melting cylinder 26. Through this device, the colored soy wax liquid at the tip of the melting cylinder 26 is quickly solidified into a solid, thereby preventing the colored soy wax liquid from dripping from the melting cylinder 26 when not marked, resulting in waste of colored soy wax.

[0038] It should be noted that, before using the present invention, the operator adds a certain amount of colored soy wax particles into the storage barrel 27; when in use, the operator manually inserts the MOS transistor 403 between the two limit plates 402 of the horizontal notch 4 on the left side when the turntable 3 stops rotating;

[0039] The driving motor 8 drives the active dial 9 to rotate, and the active dial 9 drives the driven sheave 10 to rotate intermittently, and the driven sheave 10 drives the turntable 3 to rotate intermittently. When the turntable 3 rotates, the sliding post 410 is driven to slide along the outer circumference of the fixed plate 5 through the rotating arm 409. Due to the force of the second tension spring 408, the sliding post 410 slides down from the arc protrusion 501, and then drives the rotating plate 401 to move close to the MOS transistor 403 through the rotating arm 409. The rotating plate 401 drives the pressure plate 404 to firmly press on the upper surface of the MOS transistor 403. Through this device, the position of the MOS transistor 403 can be quickly fixed, which is convenient for subsequent detection.

[0040] When the pressure plate 404 presses against the upper surface of the MOS transistor 403, it drives the two guide pillars 405 to move closer to the two pins of the MOS transistor 403. The first tension spring 407 causes the bottom ends of the guide pillars 405 to abut against the upper surfaces of the two pins, thereby electrically connecting the guide pillars 405 to the pins.

[0041] When the turntable 3 stops rotating, the first pulley 11 is driven to rotate by the driving motor 8, and the first pulley 11 drives the second pulley 13 to rotate through the belt 12, and the second pulley 13 drives the rotating wheel 15 to rotate. The rotating wheel 15 drives the two T-shaped sliders 18 to intermittently move closer to or away from each other through the cooperation of the two driving grooves 16 and the driving column 17. The two fixed plates 20 are driven to intermittently move closer to or away from each other through the two T-shaped sliders 18. When the two fixed plates 20 move closer to each other, the melting cylinder 26 is driven to move closer to the MOS transistor 403, so that the tip of the melting cylinder 26 is against the insulating layer position of the MOS transistor 403 near the pin. If there is a hole in the insulating layer of the MOS transistor 403 near the pin, the tip of the melting cylinder 26 will be against the outer surface of the pin inside the insulating layer. At the same time, through the movement of the fixed plates 20 closer to each other, the L-shaped guide plate 21 is driven to approach the guide column 4 05 movement, the conductive sheet at the groove of the L-shaped guide plate 21 will contact the guide post 405, so that the heating wire 32 inside the melting cylinder 26 is energized, and the heating wire 32 will instantly heat up. The heating of the heating wire 32 can instantly melt the colored soy wax particles inside the melting cylinder 26, and the melted colored soy wax particles will become liquid and expand in volume. Since the colored soy wax particles inside the storage barrel 27 melt slowly, the colored soy wax liquid will flow from the leak hole 34 into the holes in the insulating layer, and colored soy wax particles will remain in the holes. When there are no holes in the insulating layer, the tip of the melting cylinder 26 will not touch the pin of the MOS transistor 403, and the heating wire 32 will not be energized and heated. Through this device, whether holes are formed in the insulating layer at the pin of the MOS transistor 403 during pouring can be detected, without the need for operators to manually detect and mark them one by one, which greatly improves the detection efficiency in batch detection;

[0042] When the two fixing plates 20 move away from each other, the melting cylinder 26 is reset by the force of the third tension spring 29. The melting cylinder 26 drives the push rod 30 to move closer to the air nozzle 25 through the circular plate 28 and the connecting rod. The push rod 30 compresses the air inside the compression cylinder 24 through the compression plate 31 and ejects it from the air nozzle 25. The air ejected from the air nozzle 25 blows onto the tip of the melting cylinder 26. Through this device, the colored soy wax liquid at the leakage hole 34 at the tip of the melting cylinder 26 is quickly solidified into a solid, thereby preventing the colored soy wax liquid from dripping from the melting cylinder 26 when not marked, resulting in waste of colored soy wax.

[0043] When the turntable 3 continues to rotate intermittently, it will drive the tested MOS transistor 403 to the position directly below. Because the slide 410 contacts the arc protrusion 501, the pressure plate 404 releases the position fixation of the MOS transistor 403, and the MOS transistor 403 will fall into the collection box below, waiting to be used in the next process.

[0044] The control method of the electrical components in this solution is controlled by an external controller that is matched with it, and the control circuit can be implemented by simple programming by technicians in this field. It is common knowledge in the field and is only used without improvement. In addition, the present invention is mainly used to protect mechanical devices, so the control method and circuit connection are no longer explained in detail in this invention.

[0045] The basic principles, main features and advantages of the present invention are shown and described above. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and modifications fall within the scope of the invention as claimed.

Claims

1. A device for detecting the insulation performance of a semiconductor insulating layer, comprising a base (1), characterized in that: Two support plates (2) are symmetrically fixedly mounted on the upper surface of the base (1), a turntable (3) is rotatably mounted between the two support plates (2), a plurality of notches (4) are equidistantly provided on the circumferential outer surface of the turntable (3), a MOS transistor (403) is provided on the upper surface of the notch (4), a bracket (6) is fixedly mounted between the top ends of the two support plates (2), a T-shaped slide groove (19) is provided on the upper surface of the bracket (6), two T-shaped sliders (18) are symmetrically slidably mounted on the inner wall of the T-shaped slide groove (19), a fixing plate (20) is fixedly mounted on the lower surface of each of the two T-shaped sliders (18), and a fixing plate (20) is slidably inserted on the outer surface of the fixing plate (20) near the bottom end. A melting tube (26) is provided, wherein the inner wall of the melting tube (26) is hollow, and a heating wire (32) is fixedly installed between the inner walls of the opposite ends of the melting tube (26), and the end of the melting tube (26) away from the MOS transistor (403) passes through the outer surface of the fixed plate (20) and is fixedly installed with a circular plate (28), and the outer surface of the melting tube (26) is sleeved with a third tension spring (29), one end of the third tension spring (29) is fixedly installed with the outer surface of the circular plate (28), and the other end of the third tension spring (29) is fixedly installed with the outer surface of the fixed plate (20), and a plurality of leakage holes (34) are opened through the end of the melting tube (26) close to the MOS transistor (403), and the leakage holes (34) are fixedly installed with the leakage holes (34) of ... One end of the hot wire (32) near the MOS transistor (403) passes through the outer surface of the melting cylinder (26) and is flush with its end surface. A material storage barrel (27) is fixedly installed on the outer surface of the melting cylinder (26) near the top. The material storage barrel (27) is connected to the inside of the melting cylinder (26). An L-shaped guide plate (21) is fixedly installed on the outer surface of the fixing plate (20) near the bottom side. A groove is provided at one end of the L-shaped guide plate (21) near the MOS transistor (403). A conductive sheet is provided on the inner wall of the groove. A battery power supply (23) is provided on the outer surface of the L-shaped guide plate (21). The conductive sheet is electrically connected to the battery power supply (23). The other end of the heating wire (32) passes through The other end of the melting tube (26) is electrically connected to a wire (22), and the wire (22) is electrically connected to a battery power source (23). A rotating plate (401) is rotatably installed on the side of the notch (4), and a pressure plate (404) is fixedly installed on the bottom end of the rotating plate (401). The pressure plate (404) is arranged on the upper surface of the MOS transistor (403). Two through holes are symmetrically opened on the upper surface of the pressure plate (404), and the inner walls of the two through holes are slidably installed with guide pillars (405). The bottom ends of the two guide pillars (405) pass through the lower surface of the pressure plate (404) and abut against the outer surfaces of the two pins. The conductive sheet abuts against the outer surface of the guide pillar (405) near the top.

2. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, wherein: Two limiting plates (402) are symmetrically fixedly mounted on the upper surface of the notch (4), the MOS transistor (403) is arranged between the two limiting plates (402), and a second tension spring (408) is rotatably mounted on the outer surface of the rotating plate (401) on a side close to the MOS transistor (403), and the other end of the second tension spring (408) is rotatably connected to the outer surface of the notch (4).

3. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 2, wherein: Two pins are symmetrically arranged on the outer surface of one end of the MOS transistor (403) away from the limiting plate (402), and a baffle (406) is fixedly installed on the outer surface of the two guide pillars (405) near the top. A first tension spring (407) is sleeved on the outer surface of the guide pillar (405), and the top end of the first tension spring (407) is fixedly connected to the lower surface of the baffle (406), and the bottom end of the first tension spring (407) is fixedly connected to the upper surface of the pressure plate (404).

4. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, wherein: A fixed disk (5) is fixedly mounted on the outer surface of one of the support plates (2) on a side close to the turntable (3); a circular arc protrusion (501) is provided on the circumferential outer surface of the fixed disk (5); the fixed disk (5), the turntable (3) and the circular arc protrusion (501) are arranged at the same center; a rotating arm (409) is fixedly mounted on one end of the rotating mounting fulcrum of the rotating plate (401); a sliding column (410) is fixedly mounted on the bottom end of the rotating arm (409); and the sliding column (410) abuts against the outer surface of the fixed disk (5).

5. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, wherein: A housing (7) is fixedly mounted on the outer surface of one of the support plates (2) on the side opposite to the turntable (3); a driven sheave (10) is rotatably mounted on the outer surface of the support plate (2) close to the housing (7); an active dial (9) is also rotatably mounted on the outer surface of the support plate (2) close to the housing (7); the active dial (9) is engaged with the driven sheave (10); a driving motor (8) is fixedly mounted on the outer surface of the housing (7); an output end of the driving motor (8) passes through the outer surface of the housing (7) and is fixedly mounted at the rotation center of the active dial (9); a plurality of radial grooves are equidistantly provided on the outer surface of the driven sheave (10) in the circumferential direction; the number of the radial grooves is the same as the number of the notches (4).

6. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 5, characterized in that: Two support blocks (14) are symmetrically fixedly installed on the upper surface of the bracket (6), a rotating wheel (15) is rotatably installed between the two support blocks (14), and two driving grooves (16) are symmetrically opened on the outer surface of the rotating wheel (15). A driving column (17) is fixedly installed on the upper surface of the two T-shaped sliders (18), and the driving column (17) is slidably installed with the inner wall of the driving groove (16). One end of the rotating wheel (15) passes through the outer surface of the support block (14) and is fixedly installed with a second pulley (13). The output end of the drive motor (8) is fixedly installed with a first pulley (11), and the outer surfaces of the first pulley (11) and the second pulley (13) are provided with a belt (12).

7. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 6, wherein: A compression cylinder (24) is fixedly mounted on the outer surface of the bottom end of the fixed plate (20) near the MOS transistor (403), an air nozzle (25) is fixedly mounted on the outer surface of one end of the compression cylinder (24), and the air nozzle (25) is arranged below the melting cylinder (26). A connecting rod is fixedly mounted on the outer surface of the circular plate (28), and a push rod (30) is fixedly mounted on the bottom end of the connecting rod. The other end of the push rod (30) passes through the outer surface of the fixed plate (20) and is slidably mounted thereon. A compression plate (31) is fixedly mounted on the other end of the push rod (30), and the compression plate (31) is slidably mounted on the inner wall of the compression cylinder (24). A limiting protrusion (33) is provided on the circumferential outer surface of the melting cylinder (26), and a limiting groove matching the limiting protrusion (33) is provided on the inner wall of the fixing plate (20). The limiting protrusion (33) is slidably mounted on the inner wall of the limiting groove.

Images