Analysis method, device and equipment for reinforcement reliability of anti-radiation circuit and medium

Abstract

The invention discloses an anti-radiation circuit reinforcement reliability analysis method, device and equipment and a medium, and relates to the field of integrated circuit analysis, the anti-radiation circuit reinforcement reliability analysis method comprises the following steps: determining a control relationship among storage nodes of an anti-radiation circuit in different states according to a circuit structure of the anti-radiation circuit; and based on the control relationship of each storage node in the different states, analyzing the reinforcement reliability of the anti-radiation circuit. According to the method, the topological structure of the anti-radiation circuit can be directly reflected in combination with the circuit structure of the anti-radiation circuit, the anti-radiation circuit is improved under the condition that the reinforcement reliability of the anti-radiation circuit needs to be improved, meanwhile, the potential jump condition of each storage node does not need to be discussed, and the reliability of the anti-radiation circuit is improved. And then the influence on each transistor is analyzed, so that the analysis efficiency of the reinforcement reliability analysis of the anti-radiation circuit is improved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit analysis, and in particular to an analysis method, device, equipment and medium for strengthening the reliability of radiation-resistant circuits. Background Art

[0002] When particles hit microelectronic devices, the most sensitive area is usually the reverse biased PN junction. This is because the high field in the depletion region of the reverse biased junction can very effectively collect particle induced charges through the drift process, thereby generating a transient current at the junction contact. Taking a CMOS inverter as an example, when the output is 1, the drain of the N-type transistor is the most sensitive area. When a particle hits, it will collect negative charges, forming a transient current, and the inverter output will experience a 1 to 0 voltage jump; similarly, when the output is 0, the drain of the P-type transistor is a sensitive area. When hit by a particle, it will collect positive charges, forming a transient current, and the inverter output will experience a 0 to 1 voltage jump.

[0003] In the field of radiation-hardened circuit design, in order to improve the radiation resistance of the circuit and reduce the possibility of errors after the circuit is hit by particles, radiation hardening by design (RHBD) is a common method. After a radiation-hardened circuit structure is designed, its reinforcement reliability needs to be analyzed. Summary of the invention

[0004] The object of the present invention is to provide a method, device, equipment and medium for analyzing the reliability of radiation-resistant circuit reinforcement, so as to analyze the reliability of radiation-resistant circuit reinforcement.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] A method for analyzing the reliability of radiation-resistant circuit reinforcement includes:

[0007] Determining, according to the circuit structure of the anti-radiation circuit, a control relationship between storage nodes of the anti-radiation circuit in different states;

[0008] Based on the control relationship between the storage nodes in the different states, the reliability of the anti-radiation circuit reinforcement is analyzed.

[0009] In an optional implementation manner of the present application, determining the control relationship between the storage nodes of the anti-radiation circuit in different states according to the circuit structure of the anti-radiation circuit includes:

[0010] When the anti-radiation circuit is in the first state, taking any storage node in the anti-radiation circuit as a first storage node, and judging whether a second potential of a second storage node is determined by a first potential of the first storage node based on a circuit structure of the anti-radiation circuit;

[0011] When the second potential of the second storage node is determined by the first potential of the first storage node, determining that when the anti-irradiation circuit is in the first state, the first storage node has a positive contribution to the potential of the second storage node;

[0012] When the anti-irradiation circuit is in the second state, any storage node in the anti-irradiation circuit is used as a third storage node, and based on the circuit structure of the anti-irradiation circuit, it is determined whether a fourth potential of a fourth storage node is determined by the second potential of the fourth storage node;

[0013] When the fourth potential of the fourth storage node is determined by the third potential of the third storage node, it is determined that the third storage node has a positive contribution to the potential of the fourth storage node when the anti-irradiation circuit is in the second state.

[0014] In an optional implementation of the present application, it also includes:

[0015] Obtaining a control relationship diagram of the anti-radiation circuit according to a control relationship between each storage node of the anti-radiation circuit in different states;

[0016] The analyzing the reliability of the anti-radiation circuit reinforcement based on the control relationship between the storage nodes in the different states includes:

[0017] According to the control relationship diagram of the anti-radiation circuit, the reinforced reliability of the anti-radiation circuit is analyzed.

[0018] In an optional implementation manner of the present application, analyzing the anti-radiation circuit reinforcement reliability based on the control relationship between the storage nodes in the different states includes:

[0019] Determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states;

[0020] When any of the storage nodes is unreliable, determining that the radiation-resistant circuit is unstable;

[0021] When all the storage nodes are reliable, it is determined that the anti-radiation circuit is reliable.

[0022] In an optional implementation manner of the present application, determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states includes:

[0023] For a fifth storage node in the anti-radiation circuit, based on the control relationship between the storage nodes in different states, determining whether the sixth storage node has a positive contribution to the potential of the fifth storage node when the anti-radiation circuit is in the first state;

[0024] and, determining whether the fifth storage node has a positive contribution to the potential of the sixth storage node when the anti-irradiation circuit is in the second state;

[0025] When the anti-irradiation circuit is in the first state, the sixth storage node has a positive contribution to the potential of the fifth storage node, and when the anti-irradiation circuit is in the second state, the fifth storage node does not have a positive contribution to the potential of the sixth storage node, the fifth storage node is determined to be reliable.

[0026] In an optional implementation manner of the present application, the first state of the anti-radiation circuit is state 1, and the second state of the anti-radiation circuit is state 0.

[0027] Compared with the prior art, the analysis method of the reinforced reliability of the anti-radiation circuit provided by the present invention determines the control relationship between each storage node of the anti-radiation circuit under different states according to the circuit structure of the anti-radiation circuit; then, the reinforced reliability of the anti-radiation circuit is analyzed in combination with the control relationship between each storage node. This method can directly reflect the topological structure of the anti-radiation circuit in combination with the circuit structure of the anti-radiation circuit, and improve the anti-radiation circuit when the reinforced reliability of the anti-radiation circuit needs to be improved. At the same time, this method does not need to discuss the potential jump of each storage node separately, and then analyze the impact on each transistor, which is conducive to improving the analysis efficiency of the reinforced reliability analysis of the anti-radiation circuit.

[0028] The present invention also provides an analysis device for strengthening the reliability of an anti-radiation circuit, comprising:

[0029] A control relationship determining unit, configured to determine, according to a circuit structure of the anti-radiation circuit, a control relationship between storage nodes of the anti-radiation circuit in different states;

[0030] A reliability analysis unit is used to analyze the reliability of the anti-radiation circuit reinforcement based on the control relationship between each of the storage nodes in the different states.

[0031] Compared with the prior art, the beneficial effects of the method for analyzing the reliability of anti-radiation circuit reinforcement provided by the present invention are the same as the beneficial effects of the method for analyzing the reliability of anti-radiation circuit reinforcement described in the above technical solution, which will not be elaborated here.

[0032] The present invention also provides an electronic device, comprising:

[0033] processor;

[0034] a memory for storing instructions executable by the processor;

[0035] The processor is used to execute the above-mentioned analysis method for strengthening the reliability of the anti-radiation circuit by running the instructions in the memory.

[0036] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as the beneficial effects of the analysis method for strengthening the reliability of anti-radiation circuits described in the above technical solution, and will not be described in detail here.

[0037] The present invention also provides a computer storage medium, in which instructions are stored. When the instructions are executed, the above-mentioned analysis method for strengthening the reliability of the radiation-resistant circuit is implemented.

[0038] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as the beneficial effects of the analysis method for strengthening the reliability of radiation-resistant circuits described in the above technical solution, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0040] Figure 1 A flow chart of a method for analyzing the reliability of radiation-resistant circuit reinforcement provided in an embodiment of the present application;

[0041] Figure 2 A circuit structure diagram of an anti-radiation circuit provided in an embodiment of the present application;

[0042] Figure 3 A storage node control relationship diagram of a radiation-resistant circuit provided in this application;

[0043] Figure 4 A structural diagram of an analysis device for enhancing the reliability of an anti-radiation circuit provided in an embodiment of the present application;

[0044] Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0046] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0047] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0048] After a radiation-hardened circuit structure is designed, its reinforcement reliability needs to be analyzed.

[0049] In order to analyze the reliability of the structure of the radiation-resistant reinforced circuit, one existing method is to classify and discuss each node of the radiation-resistant circuit structure, analyze each possible voltage jump situation, and record the impact of each situation on the stability of the circuit structure. However, this method requires discussing the jump from low potential to high potential and from high potential to low potential of each node separately, and then analyzing the impact on each transistor. This process is cumbersome and time-consuming. Another method is to simulate the possible voltage reversal situation through simulation software, and analyze the reliability of the radiation-resistant circuit structure based on the simulation results, but this method cannot directly reflect the topological structure of the circuit, and it is difficult to improve the circuit.

[0050] In order to solve the defects in the prior art, the present application provides an analysis method, device, equipment and medium for strengthening the reliability of radiation-resistant circuits, which are described in detail one by one in the following embodiments.

[0051] The present application embodiment first provides a method for analyzing the reliability of radiation-resistant circuit reinforcement. Please refer to Figure 1 , Figure 1 A flow chart of the analysis method for enhancing the reliability of radiation-resistant circuits provided in an embodiment of the present application.

[0052] like Figure 1 As shown, the analysis method for strengthening the reliability of the anti-radiation circuit includes the following S101 to S102:

[0053] S101 , determining, according to the circuit structure of the anti-radiation circuit, a control relationship between storage nodes of the anti-radiation circuit in different states.

[0054] Radiation Hardened Circuit refers to electronic circuits that have taken special measures during the design and manufacturing process to improve their reliability and performance in radiation environments. These circuits can work normally in high radiation environments and reduce failures and performance degradation caused by radiation. Radiation Hardened Circuits are widely used in aerospace, nuclear industry, military and other fields that need to work in extreme radiation environments.

[0055] In actual applications, after writing to a storage / memory circuit, all storage nodes in the circuit will be at two different potentials depending on the written information (0 or 1). When the circuit is hit by particles, the potentials of these nodes may change, causing the storage information of the circuit to change.

[0056] After being hit by particles, the radiation-resistant circuit can resist the impact of the particle impact to a certain extent, so that the storage information of the circuit does not change.

[0057] The different states of the anti-radiation circuit refer to the state of the circuit after 0 or 1 is written in the circuit. After 0 is written in the circuit, all storage nodes will be at a certain potential. At this time, the state of the anti-radiation circuit is recorded as 0. Similarly, after 1 is written in the circuit, all storage nodes will be at another certain potential. At this time, the state of the anti-radiation circuit is recorded as 1.

[0058] Specifically, in the embodiment of the present application, determining the control relationship between the storage nodes of the anti-radiation circuit in different states according to the circuit structure of the anti-radiation circuit includes:

[0059] When the anti-radiation circuit is in the first state, taking any storage node in the anti-radiation circuit as a first storage node, and judging whether a second potential of a second storage node is determined by a first potential of the first storage node based on a circuit structure of the anti-radiation circuit;

[0060] When the second potential of the second storage node is determined by the first potential of the first storage node, determining that when the anti-irradiation circuit is in the first state, the first storage node has a positive contribution to the potential of the second storage node;

[0061] When the anti-irradiation circuit is in the second state, any storage node in the anti-irradiation circuit is used as a third storage node, and based on the circuit structure of the anti-irradiation circuit, it is determined whether a fourth potential of a fourth storage node is determined by the second potential of the fourth storage node;

[0062] In the case where the fourth potential of the fourth storage node is determined by the third potential of the third storage node, it is determined that when the anti-irradiation circuit is in the second state, the third storage node has a positive contribution to the potential of the fourth storage node. For example, assuming that the storage nodes of an anti-irradiation circuit are named storage nodes A, B, C, ... in sequence, wherein the storage node A is connected to the gate of the P-type transistor between the storage node B and the power supply, after writing 0 to the circuit, the potential of the storage node A is 0, in which case, the potential of the storage node A turns on the potential pull-up or pull-down transistor of the storage node B, so that the potential of the storage node B is 1, in which case, it is considered that the storage node A has a positive contribution to the potential of the storage node B.

[0063] In an optional implementation of the present application, the control relationship between the various storage nodes of the anti-radiation circuit can be represented based on a control relationship diagram of the anti-radiation circuit, so as to facilitate subsequent analysis of the anti-radiation circuit reinforcement reliability based on the control relationship diagram.

[0064] For further information, please refer to Figure 2 and Figure 3 , Figure 2 A circuit structure diagram of an anti-radiation circuit provided in an embodiment of the present application; Figure 3 A storage node control relationship diagram of a radiation-resistant circuit provided in the present application.

[0065] like Figure 2 As shown, Figure 2 It is a dual interlocked storage cell structure (DICE) in a classic radiation-resistant circuit.

[0066] In Figure 2After 0 is written into the anti-radiation circuit shown (ie, the anti-radiation circuit is in the 0 state), Figure 2 The potentials of the storage nodes A, B, C, and D shown in FIG. are 0, 1, 0, and 1 respectively; Figure 2 After 1 is written into the anti-radiation circuit shown (ie, the anti-radiation circuit is in the 1 state), Figure 2 The potentials of the storage nodes A, B, C, and D shown in the figure are 1, 0, 1, and 0, respectively.

[0067] When the anti-radiation circuit is in the 0 state, the potential of the storage node A is 0, so that the P-type transistor above the storage node B is turned on. Therefore, the potential of the storage node B is 1. That is, when the anti-radiation circuit is in the 0 state, the storage node A has a positive contribution to the potential of the storage node B. At this time, Figure 3 In the control relationship diagram shown, there is a solid arrow starting from storage node A and ending at storage node B. At the same time, when the potential of storage node B is 1, the N-type transistor under storage node A is turned on, thereby making the potential of storage node A 0, that is, when the anti-irradiation circuit is in the 0 state, storage node B has a positive contribution to the potential of storage node A. At this time, Figure 3 The control relationship diagram shown has a solid arrow starting from storage node B and ending at storage node A.

[0068] For storage node C and storage node D, when the anti-radiation circuit is in the 0 state, the potential of storage node C is 0, so that the P-type transistor above storage node D is turned on, and the potential of storage node D is 1, that is, when the anti-radiation circuit is in the 0 state, storage node C has a positive contribution to the potential of storage node D. At this time, Figure 3 In the control relationship diagram shown, there is a solid arrow starting from the storage node C and ending at the storage node D; at the same time, when the potential of the storage node D is 1, the N-type transistor below the storage node C is turned on, thereby making the potential of the storage node C 0, that is, when the anti-irradiation circuit is in the 0 state, the storage node D has a positive contribution to the potential of the storage node C. At this time, Figure 3 In the control relationship diagram shown, there is a solid arrow starting from storage node D and ending at storage node C.

[0069] The same analysis method is used to obtain the control relationship between different storage nodes when the circuit is in state 1, and then the following can be obtained: Figure 3 The control relationship shown by the hollow arrows shown. I will not repeat it here. The difference from the control relationship diagram when the circuit is in state 0 is that when the circuit is in state 0, the control relationship between different storage nodes is represented by solid arrows; when the circuit is in state 1, the control relationship between different storage nodes is represented by hollow arrows.

[0070] S102: Analyze the anti-radiation circuit reinforcement reliability based on the control relationship between the storage nodes in the different states.

[0071] Specifically, the above S102 includes:

[0072] Based on the control relationship between each of the storage nodes in different states, the reliability of each of the storage nodes in the anti-radiation circuit is determined; when any of the storage nodes is unreliable, the anti-radiation circuit is determined to be unstable; when all of the storage nodes are reliable, the anti-radiation circuit is determined to be reliable.

[0073] Wherein, determining the reliability of each storage node in the radiation-resistant circuit based on the control relationship between each storage node in different states includes:

[0074] For a fifth storage node in the anti-radiation circuit, based on the control relationship between the storage nodes in different states, determining whether the sixth storage node has a positive contribution to the potential of the fifth storage node when the anti-radiation circuit is in the first state;

[0075] and, determining whether the fifth storage node has a positive contribution to the potential of the sixth storage node when the anti-irradiation circuit is in the second state;

[0076] When the anti-irradiation circuit is in the first state, the sixth storage node has a positive contribution to the potential of the fifth storage node, and when the anti-irradiation circuit is in the second state, the fifth storage node does not have a positive contribution to the potential of the sixth storage node, the fifth storage node is determined to be reliable.

[0077] That is, when the radiation-resistant circuit is in different circuit states, when all storage nodes are reliable nodes, the radiation-resistant circuit is a reliable circuit. In this case, if the radiation-resistant circuit is impacted by particles, the potential of the changed storage node can be restored by another storage node with which it has a control relationship after the impact ends.

[0078] For example, please refer to Figure 3 When the anti-radiation circuit is in the first state, the potentials of all storage nodes are in the first state, that is, the potential of storage node A is 0, the potential of storage node B is 1, the potential of storage node C is 0, and the potential of storage node D is 1.

[0079] When the potential of storage node A is impacted by particles and changes from potential 0 to potential 1, storage node A will change from the first state to the second state, and the positive contribution of storage node A to storage node B will also change to the positive contribution to storage node D. In this case, the potential of storage node D will also change from potential 1 to potential 0, and storage node D will also change from the first state to the second state. Since in the second state, storage node D only has a positive contribution to storage node A, storage node A also only has a positive contribution to storage node D. Therefore, even if storage node A and storage node D both enter the second state, storage node B and storage node C are still in the first state.

[0080] Because in the first state, storage node B only has a positive contribution to storage node A, storage node C also only has a positive contribution to storage node D, and the potentials of storage node B and storage node C have never changed. Therefore, the potential of storage node A will be restored from potential 1 to potential 0 by storage node B, and the potential of storage node D will be restored from potential 0 to potential 1 by storage node C. In summary, the analysis method of the anti-radiation circuit reinforcement reliability provided in the embodiment of the present application determines the control relationship between each storage node of the anti-radiation circuit under different states according to the circuit structure of the anti-radiation circuit; then, the reinforcement reliability of the anti-radiation circuit is analyzed in combination with the control relationship between each storage node. This method can directly reflect the topological structure of the anti-radiation circuit in combination with the circuit structure of the anti-radiation circuit, and improve the anti-radiation circuit when the reinforcement reliability of the anti-radiation circuit needs to be improved. At the same time, this method does not need to discuss the potential jump of each storage node separately, and then analyze the impact of each transistor, which is conducive to improving the analysis efficiency of the anti-radiation circuit reinforcement reliability analysis.

[0081] Corresponding to the above-mentioned analysis method for the reliability of the anti-radiation circuit reinforcement, the embodiment of the present application also provides an analysis device for the reliability of the anti-radiation circuit reinforcement, please refer to Figure 4 , Figure 4 Structural diagram of an analysis device for enhancing the reliability of radiation-resistant circuits provided in an embodiment of the present application.

[0082] like Figure 4 As shown, the analysis device for strengthening the reliability of the anti-radiation circuit includes:

[0083] A control relationship determining unit 401, configured to determine, according to the circuit structure of the anti-irradiation circuit, the control relationship between the storage nodes of the anti-irradiation circuit in different states;

[0084] The reliability analysis unit 402 is used to analyze the anti-radiation circuit reinforcement reliability based on the control relationship between the storage nodes in the different states.

[0085] In an optional implementation manner of the present application, determining the control relationship between the storage nodes of the anti-radiation circuit in different states according to the circuit structure of the anti-radiation circuit includes:

[0086] When the anti-radiation circuit is in the first state, taking any storage node in the anti-radiation circuit as a first storage node, and judging whether a second potential of a second storage node is determined by a first potential of the first storage node based on a circuit structure of the anti-radiation circuit;

[0087] When the second potential of the second storage node is determined by the first potential of the first storage node, determining that when the anti-irradiation circuit is in the first state, the first storage node has a positive contribution to the potential of the second storage node;

[0088] When the anti-irradiation circuit is in the second state, any storage node in the anti-irradiation circuit is used as a third storage node, and based on the circuit structure of the anti-irradiation circuit, it is determined whether a fourth potential of a fourth storage node is determined by the second potential of the fourth storage node;

[0089] When the fourth potential of the fourth storage node is determined by the third potential of the third storage node, it is determined that the third storage node has a positive contribution to the potential of the fourth storage node when the anti-irradiation circuit is in the second state.

[0090] In an optional embodiment of the present application, the device is also used for:

[0091] Obtaining a control relationship diagram of the anti-radiation circuit according to a control relationship between each storage node of the anti-radiation circuit in different states;

[0092] The analyzing the reliability of the anti-radiation circuit reinforcement based on the control relationship between the storage nodes in the different states includes:

[0093] According to the control relationship diagram of the anti-radiation circuit, the reinforced reliability of the anti-radiation circuit is analyzed.

[0094] In an optional implementation manner of the present application, analyzing the anti-radiation circuit reinforcement reliability based on the control relationship between the storage nodes in the different states includes:

[0095] Determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states;

[0096] When any of the storage nodes is unreliable, determining that the radiation-resistant circuit is unstable;

[0097] When all the storage nodes are reliable, it is determined that the anti-radiation circuit is reliable.

[0098] In an optional implementation manner of the present application, determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states includes:

[0099] For a fifth storage node in the anti-radiation circuit, based on the control relationship between the storage nodes in different states, determining whether the sixth storage node has a positive contribution to the potential of the fifth storage node when the anti-radiation circuit is in the first state;

[0100] and, determining whether the fifth storage node has a positive contribution to the potential of the sixth storage node when the anti-irradiation circuit is in the second state;

[0101] When the anti-irradiation circuit is in the first state, the sixth storage node has a positive contribution to the potential of the fifth storage node, and when the anti-irradiation circuit is in the second state, the fifth storage node does not have a positive contribution to the potential of the sixth storage node, and the fifth storage node is determined to be reliable. In an optional implementation of the present application, the first state of the anti-irradiation circuit is state 1, and the second state of the anti-irradiation circuit is state 0.

[0102] The above-mentioned device embodiment provided in this embodiment belongs to the same application concept as the method embodiment of this application, and can execute the analysis method of the reliability of the anti-radiation circuit reinforcement provided in any of the above-mentioned embodiments of this application, and has the corresponding functional modules and beneficial effects of executing the analysis method of the reliability of the anti-radiation circuit reinforcement. For the technical details not fully described in this embodiment, please refer to the specific processing content of the background field determination method provided in the above-mentioned embodiment of this application, and will not be repeated here.

[0103] The present application also provides an electronic device, such as Figure 5 As shown, Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0104] like Figure 5 As shown, the electronic device comprises:

[0105] Processor 210;

[0106] A memory 200 for storing instructions executable by the processor 210;

[0107] The processor 210 is used to execute the analysis method for strengthening the reliability of an anti-radiation circuit disclosed in any of the above embodiments by running the instructions in the memory 200.

[0108] The processor 210, the memory 200, the communication interface 220, the input device 230 and the output device 240 are connected to each other via a bus.

[0109] A bus may include a pathway that transfers information between components of a computer system.

[0110] The processor 210 may be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the scheme of the present invention. It may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0111] The processor 210 may include a main processor, and may also include a baseband chip, a modem, and the like.

[0112] The memory 200 stores a program for executing the technical solution of the present invention, and may also store an operating system and other key services. Specifically, the program may include a program code, and the program code includes a computer operation instruction. More specifically, the memory 200 may include a read-only memory (ROM), other types of static storage devices that can store static information and instructions, a random access memory (RAM), other types of dynamic storage devices that can store information and instructions, a disk storage, a flash, and the like.

[0113] The input device 230 may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a touch screen, etc.

[0114] Output device 240 may include devices that allow information to be output to a user, such as a display screen, printer, speaker, etc.

[0115] The communication interface 220 may include any transceiver or the like to communicate with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0116] The processor 210 executes the program stored in the memory 200 and calls other devices, which can be used to implement each step of any one of the analysis methods for strengthening the reliability of radiation-resistant circuits provided in the above embodiments of the present application.

[0117] In addition to the above-mentioned methods and devices, an embodiment of the present application may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to execute the steps in the analysis method of the radiation-resistant circuit reinforcement reliability of various embodiments of the present application.

[0118] The computer program product may be written in any combination of one or more programming languages ​​to write program codes for performing the operations of the embodiments of the present application, including object-oriented programming languages, such as Java, C++, etc., and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as an independent software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0119] In addition, the embodiments of the present application may also be a storage medium on which a computer program is stored, and the computer program is executed by a processor to execute the steps in the analysis method for strengthening the reliability of radiation-resistant circuits in various embodiments of the present application.

[0120] For the aforementioned method embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the order of the actions described, because according to the present application, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present application.

[0121] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0122] The steps in the methods of each embodiment of the present application can be adjusted in sequence, combined and deleted according to actual needs, and the technical features recorded in each embodiment can be replaced or combined.

[0123] The modules and sub-modules in the devices and terminals in the various embodiments of the present application can be combined, divided and deleted according to actual needs.

[0124] In the several embodiments provided in the present application, it should be understood that the disclosed terminals, devices and methods can be implemented in other ways. For example, the terminal embodiments described above are only schematic, for example, the division of modules or submodules is only a logical function division, and there may be other division methods in actual implementation, for example, multiple submodules or modules can be combined or integrated into another module, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, which can be electrical, mechanical or other forms.

[0125] The modules or submodules described as separate components may or may not be physically separated, and the components of the modules or submodules may or may not be physical modules or submodules, that is, they may be located in one place, or they may be distributed on multiple network modules or submodules. Some or all of the modules or submodules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0126] In addition, each functional module or submodule in each embodiment of the present application may be integrated into one processing module, or each module or submodule may exist physically separately, or two or more modules or submodules may be integrated into one module. The above-mentioned integrated modules or submodules may be implemented in the form of hardware or in the form of software functional modules or submodules.

[0127] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0128] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be implemented directly by hardware, software units executed by a processor, or a combination of the two. The software units may be placed in a random access memory (RAM), a memory, a read-only memory (ROM), an electrically programmable ROM, an electrically erasable programmable ROM, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0129] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0130] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for analyzing the reliability of radiation-resistant circuit reinforcement, characterized in that: include: Determining, according to the circuit structure of the anti-radiation circuit, a control relationship between storage nodes of the anti-radiation circuit in different states; Based on the control relationship between the storage nodes in the different states, the reliability of the anti-radiation circuit reinforcement is analyzed.

2. The method according to claim 1, characterized in that: Determining the control relationship between the storage nodes of the anti-radiation circuit in different states according to the circuit structure of the anti-radiation circuit includes: When the anti-radiation circuit is in the first state, taking any storage node in the anti-radiation circuit as a first storage node, and judging whether a second potential of a second storage node is determined by a first potential of the first storage node based on a circuit structure of the anti-radiation circuit; When the second potential of the second storage node is determined by the first potential of the first storage node, determining that when the anti-irradiation circuit is in the first state, the first storage node has a positive contribution to the potential of the second storage node; When the anti-irradiation circuit is in the second state, any storage node in the anti-irradiation circuit is used as a third storage node, and based on the circuit structure of the anti-irradiation circuit, it is determined whether a fourth potential of a fourth storage node is determined by the second potential of the fourth storage node; When the fourth potential of the fourth storage node is determined by the third potential of the third storage node, it is determined that the third storage node has a positive contribution to the potential of the fourth storage node when the anti-irradiation circuit is in the second state.

3. The method according to claim 1, characterized in that Also includes: Obtaining a control relationship diagram of the anti-radiation circuit according to a control relationship between each storage node of the anti-radiation circuit in different states; The analyzing the reliability of the anti-radiation circuit reinforcement based on the control relationship between the storage nodes in the different states includes: According to the control relationship diagram of the anti-radiation circuit, the reinforced reliability of the anti-radiation circuit is analyzed.

4. The method according to claim 1, characterized in that: The analyzing the reliability of the anti-radiation circuit reinforcement based on the control relationship between the storage nodes in the different states includes: Determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states; When any of the storage nodes is unreliable, determining that the radiation-resistant circuit is unstable; When all the storage nodes are reliable, it is determined that the anti-radiation circuit is reliable.

5. The method according to claim 4, characterized in that The determining the reliability of each of the storage nodes in the radiation-resistant circuit based on the control relationship between each of the storage nodes in different states includes: For a fifth storage node in the anti-radiation circuit, based on the control relationship between the storage nodes in different states, determining whether the sixth storage node has a positive contribution to the potential of the fifth storage node when the anti-radiation circuit is in the first state; and, determining whether the fifth storage node has a positive contribution to the potential of the sixth storage node when the anti-irradiation circuit is in the second state; When the anti-irradiation circuit is in the first state, the sixth storage node has a positive contribution to the potential of the fifth storage node, and when the anti-irradiation circuit is in the second state, the fifth storage node does not have a positive contribution to the potential of the sixth storage node, the fifth storage node is determined to be reliable.

6. The method according to claim 5, characterized in that The first state of the anti-radiation circuit is a 1 state, and the second state of the anti-radiation circuit is a 0 state.

7. An analysis device for strengthening the reliability of radiation-resistant circuits, characterized in that: include: A control relationship determining unit, configured to determine, according to a circuit structure of the anti-radiation circuit, a control relationship between storage nodes of the anti-radiation circuit in different states; A reliability analysis unit is used to analyze the reliability of the anti-radiation circuit reinforcement based on the control relationship between each of the storage nodes in the different states.

8. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is used to execute the analysis method for strengthening the reliability of radiation-resistant circuits according to any one of claims 1 to 6 by running instructions in the memory.

9. A computer storage medium, characterized in that The computer storage medium stores instructions, and when the instructions are executed, the method for analyzing the reliability of radiation-resistant circuit reinforcement described in any one of claims 1 to 6 is implemented.

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