A chamfering device and method

Abstract

This application relates to the field of wafer processing, and particularly to a chamfering device and method. The chamfering device includes: a chamfering mechanism, which includes: a first grinding wheel having a first rotating shaft arranged horizontally, and the first grinding wheel can rotate around the first rotating shaft; the first grinding wheel is used for grinding the edge of the wafer; a carrier mechanism located on one side of the chamfering mechanism, which includes: a base; a turntable for carrying the wafer and driving the wafer to rotate so that the axial side of the wafer contacts the first grinding wheel to achieve chamfering; and a partition mechanism, which includes: a nozzle located between the turntable and the first grinding wheel, the nozzle is connected to the base, and the nozzle is used to face the lower surface of the wafer to form an air screen that isolates the turntable and the first grinding wheel. It solves the technical problems of low production efficiency and low production quality of the chamfering device, and achieves the technical effect of improving the production efficiency and production quality of the chamfering device.

Description

Technical Field

[0001] This application relates to the field of wafer processing, and particularly to a chamfering device and method. Background Art

[0002] A wafer chamfering device is a key device in semiconductor manufacturing, used for precise chamfering of the wafer edge. The chamfering process aims to remove burrs and damages on the wafer edge to improve the mechanical strength of the wafer and the yield of subsequent processing.

[0003] In the prior art, during the chamfering process of a traditional wafer chamfering device, the wafer is placed on a turntable, and the turntable drives the wafer to rotate, so that the entire circumference of the wafer contacts and grinds with the grinding wheel, thereby completing the chamfering of the entire circumference of the wafer. However, during the contact grinding between the wafer and the grinding wheel, a large number of fine debris will be generated. Due to the action of high-speed rotation and grinding force, these debris often randomly splash onto the surface of the turntable or into the tiny gap between the turntable and the wafer. The attachment of the debris not only increases the cleaning difficulty of the turntable, but more importantly, the debris embedded in the gap between the wafer and the turntable is extremely likely to scratch the lower surface of the wafer during subsequent processing, resulting in wafer damage, reducing the stability and service life of the device, thus increasing the maintenance cost and downtime, and greatly reducing the production efficiency and product quality of the chamfering device.

[0004] Therefore, the technical problem of the prior art is that the production efficiency of the chamfering device is low. Summary of the Invention

[0005] This application provides a chamfering device and method, which solves the technical problems of low production efficiency and product quality of the chamfering device, and achieves the technical effect of improving the production efficiency and product quality of the chamfering device.

[0006] On the one hand, a chamfering device provided by this application adopts the following technical solution:

[0007] A chamfering device, comprising: a chamfering mechanism, the chamfering mechanism includes: a first grinding wheel, the first grinding wheel has a first rotating shaft arranged horizontally, and the first grinding wheel can rotate around the first rotating shaft; the first grinding wheel is used for grinding the edge of a wafer; a carrier mechanism, the carrier mechanism is located on one side of the chamfering mechanism, the carrier mechanism includes: a base; a turntable, the turntable is rotatably connected to the base, the turntable has a vertically arranged axis and the turntable can rotate around the vertically arranged axis, the turntable has an adsorption function, the turntable is used for carrying the wafer and driving the wafer to rotate, so that the axial side of the wafer contacts the first grinding wheel to realize chamfering; wherein, a first contact area is formed when the wafer contacts the first grinding wheel, and the chamfering mechanism can move relative to the carrier mechanism to adjust the formation position of the first contact area on the edge of the wafer; and a baffle mechanism, the baffle mechanism includes: a nozzle, the nozzle is located between the turntable and the first grinding wheel, the nozzle is connected to the base, and the nozzle is used for facing the lower surface of the wafer to form an air screen that isolates the turntable and the first grinding wheel.

[0008] With such a setting, a baffle mechanism is arranged between the first grinding wheel and the turntable. The baffle mechanism is used for jetting air towards the lower surface of the wafer, so as to form an air screen for isolating debris between the turntable and the first grinding wheel. Due to the formation of the air screen, the debris formed by the first grinding wheel grinding the wafer is prevented from splashing onto the lower surface of the wafer and between the wafer and the turntable, protecting the wafer from contamination and damage.

[0009] Preferably, the jetting direction of the nozzle is inclined towards one side of the first grinding wheel, so that the air screen is obliquely upward.

[0010] With such a setting, the jetting direction of the nozzle is inclined towards one side of the first grinding wheel, forming an obliquely upward air screen, which not only enhances the isolation effect of the air screen, but also can better guide the discharge of debris, reduce the retention of debris on the lower surface of the wafer, and further protect the wafer from damage.

[0011] Preferably, the chamfering mechanism further includes:

[0012] A second grinding wheel, the second grinding wheel has a second rotating shaft arranged horizontally, and the second grinding wheel can rotate around the second rotating shaft; the second grinding wheel is located below the first grinding wheel, and a working space is formed between the second grinding wheel and the first grinding wheel. The wafer is located in the working space and contacts the first grinding wheel and the second grinding wheel for grinding to chamfer; a second contact area is formed when the wafer contacts the second grinding wheel, and the chamfering mechanism can move relative to the carrier mechanism to adjust the formation position of the second contact area on the edge of the wafer;

[0013] Wherein, the first grinding wheel and the second grinding wheel are not in the same vertical space.

[0014] With such a setting, a second grinding wheel is added on the basis of the first grinding wheel, forming two grinding positions, upper and lower, which improves the chamfering efficiency and quality. At the same time, the second grinding wheel and the first grinding wheel are not in the same vertical space, enabling all-angle grinding of the wafer edge, avoiding mutual interference, and ensuring the stable operation of the equipment. Among them, it can be understood that the first grinding wheel and the second grinding wheel are centrosymmetric with respect to the position of the wafer, so that the force exerted on the wafer by the first grinding wheel and the force exerted on the wafer by the second grinding wheel cancel each other out, which is beneficial to the uniform force on the wafer during grinding and improves the chamfering quality of the wafer.

[0015] Preferably, a plurality of the nozzles are provided, and the plurality of nozzles are arranged in a straight line. The projection length of the plurality of nozzles on the wafer is L1, and the arrangement length of the plurality of nozzles is L2, where L1 < L2.

[0016] With such a setting, by arranging a plurality of nozzles in a straight line and the arrangement length L2 being greater than the projection length L1 of the nozzles on the wafer, the nozzles can cover a wider area of the lower surface of the wafer, thereby more effectively isolating the debris generated during the grinding process of the lower surface of the wafer.

[0017] Preferably, both ends of the arrangement of the nozzles are located outside the projection of the nozzles on the wafer.

[0018] With such a setting, the nozzles with projections outside the wafer are used to blow air upward. Since the arrangement length of the nozzles exceeds the edge of the wafer, when the nozzles pass upward through the edge of the wafer, due to the Bernoulli effect, an air flow is formed outward at the position above the wafer, which can drive the debris above the wafer to move and be discharged. Further, under the rotation of the wafer, the wafer drives the debris to move, further improving the removal effect of the debris, that is, the debris can move upward with the nozzles and will not stay on the wafer to prevent damage to the wafer.

[0019] Preferably, it is defined that the projection of the nozzle on the wafer edge has a first position and a second position, and the rotation direction of the wafer is from the first position to the second position;

[0020] A collection mechanism is provided above the second position, and the collection mechanism is used to collect the debris on the upper surface of the wafer.

[0021] With such a setting, the air flow formed by the Bernoulli principle drives the debris on the upper surface of the wafer. At the same time, the rotation of the wafer itself further drives the debris on the upper surface of the wafer to move, move upward together with the air flow formed by the nozzles, and be collected by the collection mechanism, thus realizing the efficient treatment of the debris.

[0022] Preferably, an air flow channel is formed upward for the nozzles with projections outside the wafer, and the nozzles supply air into the air flow channel to drive the debris; the collection mechanism includes:

[0023] An electrostatic component is disposed within the air flow channel. The electrostatic component has static electricity to adsorb debris in the air flow.

[0024] With such an arrangement, flying debris is captured through the electrostatic effect, improving the accuracy of debris capture, and the electrostatic structure is simple with a relatively low cost.

[0025] Preferably, the distance between the nozzle and the lower surface of the wafer is between 0.5 cm and 1.0 cm.

[0026] With such an arrangement, the distance between the nozzle and the wafer is controlled within an effective range, which is conducive to the nozzle acting accurately and directionally on the lower surface of the wafer, preventing air flow disorder, and is conducive to improving the isolation effect on the lower surface and the debris removal effect.

[0027] Preferably, the chamfering mechanism further includes a driving assembly. There are two sets of the driving assembly, and the two sets of the driving assembly are respectively connected to and act on the first grinding wheel and the second grinding wheel, so that the first grinding wheel and the second grinding wheel can move in a first direction, a second direction, and a third direction, where the first direction, the second direction, and the third direction are perpendicular to each other.

[0028] With such an arrangement, the setting of the driving assembly enables the first grinding wheel and the second grinding wheel to move in three mutually perpendicular directions, achieving precise adjustment of the chamfering position at the edge of the wafer. This design improves the chamfering accuracy and flexibility, meeting the chamfering requirements for wafers of different sizes and shapes.

[0029] Preferably, the nozzle is movably connected to the base, and the partition assembly further includes:

[0030] An elastic member, the elastic member is connected between the nozzle and the base. The elastic member can drive the nozzle to float up or down through elastic potential energy. A stress area is formed between the elastic member and the base, and a pressure sensor is disposed on the stress area for obtaining the stress condition of the elastic member.

[0031] With such an arrangement, the nozzle can float up and down according to the actual situation to adapt to wafers of different heights or positions; meanwhile, the setting of the pressure sensor can monitor the stress condition of the elastic member in real time, providing strong support for precisely adjusting the position of the grinding wheel.

[0032] Preferably, the base has a bracket for supporting the nozzle; the elastic member is an elastic rod, the first end of the elastic rod is connected to the nozzle, the second end of the elastic rod is connected to the bracket, the stress area is formed between the second end of the elastic rod and the bracket, and the pressure sensor is disposed between the elastic rod and the bracket.

[0033] With such a setting, by specifically describing the connection manner of the elastic member as an elastic rod, the bracket, and the pressure sensor, precise control and monitoring of the floating state of the nozzle are achieved, improving the stability and reliability of the equipment and ensuring a stable improvement in the chamfering quality.

[0034] Preferably, a nozzle guiding sleeve is provided on the base; the elastic member is a spring, the spring is arranged in the sleeve, a first end of the spring is connected to the nozzle, a second end of the spring is connected to the base, a force receiving area is formed between the second end of the spring and the base, and the pressure sensor is arranged between the spring and the base.

[0035] With such a setting, the way to achieve nozzle floating and force monitoring is through the combination of the spring and the sleeve; this design can also achieve real-time monitoring of the up and down floating of the nozzle and the force condition, providing strong support for precisely adjusting the position of the grinding wheel; at the same time, the combination of the spring and the sleeve also has the advantages of simple structure and easy maintenance.

[0036] It can be understood that when the force on the pressure sensor increases, it indicates that the nozzle is pressed down. The reason for the nozzle to be pressed down is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is lower than that of the wafer. The first grinding wheel presses down the wafer, resulting in a smaller distance between the wafer and the nozzle. In this case, excessive grinding occurs between the first grinding wheel above the wafer and the wafer; insufficient grinding occurs between the second grinding wheel below the wafer and the wafer. When the force on the pressure sensor decreases, it indicates that the nozzle floats up. The reason for the nozzle to float up is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is higher than that of the wafer. The second grinding wheel pushes up the wafer, resulting in a larger distance between the wafer and the nozzle. In this case, insufficient grinding occurs between the first grinding wheel above the wafer and the wafer; excessive grinding occurs between the second grinding wheel below the wafer and the wafer. By obtaining the force on the pressure sensor and analyzing whether the wafer is higher or lower, the positions of the first grinding wheel and the second grinding wheel can be adjusted accordingly to make the positions of the wafer, the first grinding wheel, and the second grinding wheel match, preventing insufficient grinding or excessive grinding.

[0037] On the other hand, a chamfering method provided by the present application adopts the following technical solution:

[0038] A chamfering method applied to the chamfering device includes: jetting air from the nozzle to the lower surface of the wafer to form an air screen between the turntable and the first grinding wheel and / or the second grinding wheel to prevent grinding debris from flying into the space between the lower surface of the wafer and the turntable.

[0039] With such a setting, the chamfering method forms an air screen by jetting air from the nozzle to the lower surface of the wafer, effectively isolating the contamination of the grinding debris to the lower surface of the wafer and the turntable.

[0040] Preferably, the nozzle is movably connected to the base. The baffle assembly further includes: an elastic member connected between the nozzle and the base. The elastic member can drive the nozzle to float or sink through elastic potential energy. A stress area is formed between the elastic member and the base, and a pressure sensor is arranged on the stress area for obtaining the stress condition of the elastic member.

[0041] Based on the stress condition of the elastic member, drive the first grinding wheel and the second grinding wheel to float or sink so that the upper and lower edges of the wafer are evenly stressed.

[0042] With such a setting, the real-time monitoring and precise adjustment functions of the floating state and stress condition of the nozzle are realized. Ensure that the upper and lower edges of the wafer are evenly stressed during the chamfering process, further improving the chamfering accuracy and stability. At the same time, it also helps to detect and handle equipment failures in a timely manner, improving the reliability and service life of the equipment.

[0043] It can be understood that when the force on the pressure sensor increases, it indicates that the nozzle is pressed down. The reason for the nozzle to be pressed down is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is lower than that of the wafer relative to the wafer. The first grinding wheel presses down the wafer, resulting in a smaller distance between the wafer and the nozzle. In this way, the first grinding wheel above the wafer and the wafer are over-ground; the second grinding wheel below the wafer and the wafer are under-ground. When the force on the pressure sensor decreases, it indicates that the nozzle floats up. The reason for the nozzle to float up is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is higher than that of the wafer relative to the wafer. The second grinding wheel pushes up the wafer, resulting in a larger distance between the wafer and the nozzle. In this way, the first grinding wheel above the wafer and the wafer are under-ground; the second grinding wheel below the wafer and the wafer are over-ground. By obtaining the force on the pressure sensor and analyzing whether the wafer is higher or lower, the positions of the first grinding wheel and the second grinding wheel can be adjusted correspondingly to make the positions of the wafer, the first grinding wheel, and the second grinding wheel match, preventing under-grinding or over-grinding.

[0044] In summary, the present application includes at least one of the following beneficial technical effects:

[0045] In the chamfering device proposed in the present application, a baffle mechanism is arranged between the first grinding wheel and the turntable. The baffle mechanism is used to blow air to the lower surface of the wafer to form an air screen for isolating debris between the turntable and the first grinding wheel. Due to the formation of the air screen, the debris formed by the first grinding wheel grinding the wafer is prevented from splashing to the lower surface of the wafer and between the wafer and the turntable, protecting the wafer from contamination and damage. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 is the first schematic diagram of the baffle mechanism in the chamfering device of the present application;

[0047] Figure 2It is the first schematic diagram of the chamfering process described in this application;

[0048] Figure 3 It is the second schematic diagram of the chamfering process described in this application;

[0049] Figure 4 It is the schematic diagram of the grinding wheel of the chamfering device described in this application;

[0050] Figure 5 It is the second schematic diagram of the partition mechanism in the chamfering device described in this application;

[0051] Figure 6 It is the schematic diagram of the nozzle of the chamfering device described in this application;

[0052] Figure 7 It is the schematic diagram of the nozzle working of the chamfering device described in this application;

[0053] Figure 8 It is the three-dimensional view of the nozzle working of the chamfering device described in this application;

[0054] Figure 9 It is the first schematic diagram of the nozzle feedback of the chamfering device described in this application;

[0055] Figure 10 It is the second schematic diagram of the nozzle feedback of the chamfering device described in this application.

[0056] Explanation of reference numerals: 100, chamfering mechanism; 110, first grinding wheel; 120, second grinding wheel; 200, carrier mechanism; 210, base; 220, turntable; 230, bracket; 240, sleeve; 250, stress area; 300, partition mechanism; 310, nozzle; 311, air screen; 320, elastic member; 321, elastic rod; 322, spring; 330, pressure sensor; 340, first position; 350, second position; 400, wafer; 410, first contact area; 420, second contact area; 500, debris; 600, collection mechanism. Detailed implementation manners

[0057] The serial numbers assigned to the components in this document itself, such as "first", "second", etc., are only used to distinguish the described objects and do not have any sequential or technical meaning. And the "connection" and "coupling" mentioned in this application, unless otherwise specified, both include direct and indirect connection (coupling). In the description of this application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation to this application.

[0058] In this application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "below", "beneath" and "underneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0059] The embodiments of this application provide a chamfering device and a chamfering method, which solve the technical problems of low production efficiency and low production quality of the chamfering device, and achieve the technical effect of improving the production efficiency and production quality of the chamfering device.

[0060] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings of the specification and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not used to limit this application.

[0061] The wafer 400 chamfering device plays a crucial role in the field of semiconductor manufacturing. Its working principle is to fix the wafer 400 on a rotating turntable 220 and use a grinding wheel to perform a fine chamfering process on the edge of the wafer 400. This process is not only for beautifying the appearance of the wafer 400, but more importantly, it is crucial for improving the edge quality of the wafer 400, reducing chip breakage caused by mechanical stress, optimizing the contact area during the packaging process, and ensuring the stability and reliability of the wafer 400.

[0062] Traditional wafer chamfering equipment uses a method where the turntable 220 rotates to drive the wafer 400, enabling the entire circumference of the wafer 400 to contact the grinding wheel for grinding, thereby achieving chamfering; however, this process faces a series of challenges in actual operation, especially the issue of debris 500 management; during the contact grinding process between the wafer 400 and the grinding wheel, a large amount of fine debris 500 is generated; these debris 500 will randomly splash and adhere to the surface of the turntable 220, and even penetrate into the tiny gaps between the turntable 220 and the wafer 400; this random sputtering and adhesion of the debris 500 not only increases the subsequent cleaning difficulty of the turntable 220, but more importantly, the debris 500 embedded in the gap between the wafer 400 and the turntable 220 is extremely likely to scratch the lower surface of the wafer 400 during subsequent processing, resulting in damage to the wafer 400, and thus affecting the yield and quality of the chip.

[0063] In addition, the adhesion of the debris 500 may also have a negative impact on the equipment stability of the chamfering equipment; the accumulated debris 500 over a long period may cause wear and contamination of the equipment components, reducing the overall performance and lifespan of the equipment; this not only increases the maintenance cost of the equipment, but may also lead to frequent downtime, thus greatly reducing the production efficiency of the chamfering equipment.

[0064] The existing wafer 400 chamfering equipment has obvious deficiencies in debris 500 management. There is an urgent need to develop a new type of chamfering equipment that can effectively solve the problems of debris 500 sputtering and adhesion, so as to improve the processing quality and production efficiency of wafer 400 chamfering.

[0065] Furthermore, during the wafer 400 chamfering process, there is also an issue that cannot be ignored: the equipment lacks the ability to obtain the status and position information of the wafer 400 in real time; the relative position accuracy between the wafer 400 and the grinding wheel is extremely high, and any tiny deviation may lead to serious consequences; but the reality is that due to various factors such as mechanical installation errors, visual judgment errors, and mechanical vibrations, it is often difficult to ensure this high-precision requirement; however, these problems are often only discovered after the entire chamfering process is completed, through inspections of the processed wafer 400 or other subsequent detection means.

[0066] When the relative position between the wafer 400 and the grinding wheel is misaligned, a series of problems will follow. For example, when the position of the grinding wheel is slightly higher or slightly lower than the preset correct position compared to the wafer 400, due to the limitation of system accuracy, the chamfering operation will continue. It can be understood that the reason for the error in the relative position between the wafer 400 and the grinding wheel is insufficient driving accuracy of the grinding wheel, etc., resulting in an incorrect position of the grinding wheel (the wafer 400 is adsorbed and fixed by the turntable 220, and the position of the wafer 400 generally remains unchanged). When the upper grinding wheel (the first grinding wheel 110) and the lower grinding wheel (the second grinding wheel 120) are lower than the wafer 400, the force between the grinding wheel (the first grinding wheel 110) above the wafer 400 and the wafer 400 is relatively large. Due to the certain toughness of the wafer 400, the grinding wheel (the first grinding wheel 110) above the wafer 400 presses down the edge of the wafer 400 to a certain extent. At this time, the upper edge position of the wafer 400 is over-ground and the lower edge position of the wafer 400 is under-ground. On the contrary, when the upper grinding wheel (the first grinding wheel 110) and the lower grinding wheel (the second grinding wheel 120) are higher than the wafer 400, the force between the grinding wheel (the second grinding wheel 120) below the wafer 400 and the wafer 400 is relatively large. Due to the certain toughness of the wafer 400, the lower grinding wheel (the second grinding wheel 120) pushes up the edge of the wafer 400 to a certain extent. At this time, the lower edge position of the wafer 400 is over-ground and the upper edge position of the wafer 400 is under-ground. This uneven grinding will not only affect the appearance quality of the wafer 400, but more importantly, it will cause the performance of the wafer 400 to decline, seriously affecting the product quality and yield.

[0067] The present application provides a chamfering device, which can improve production efficiency and product quality; aims to chamfer the edge of the wafer 400 efficiently and accurately, while preventing the grinding debris 500 from contaminating the wafer 400 and the device; and by matching the positions between the wafer 400 and the two grinding wheels, it prevents under-grinding or over-grinding.

[0068] As Figure 1 shown, the chamfering device of the present application includes a chamfering mechanism 100, a carrier mechanism 200, and a partition mechanism 300. The chamfering mechanism 100 is used to contact the wafer 400 to complete the chamfering grinding of the wafer 400; the carrier mechanism 200 is used to carry the wafer 400; the partition mechanism 300 is arranged between the chamfering mechanism 100 and the carrier mechanism 200, and is used to isolate the chamfering mechanism 100 and the carrier mechanism 200 (specifically, the gap between the turntable 220 and the wafer 400) to prevent the debris 500 from splashing.

[0069] The chamfering mechanism 100 is used to contact the wafer 400 to complete the chamfering grinding of the wafer 400. As Figure 1-3As shown, the chamfering mechanism 100 is the core structure for grinding the wafer 400. The chamfering mechanism 100 includes a first grinding wheel 110, a second grinding wheel 120, and a driving assembly. The first grinding wheel 110 has a first rotating shaft arranged horizontally and can rotate around the first rotating shaft for grinding the edge of the wafer 400. The second grinding wheel 120 also has a second rotating shaft arranged horizontally and can rotate around the second rotating shaft, and is located below the first grinding wheel 110. A working space is formed between the first grinding wheel 110 and the second grinding wheel 120, and the wafer 400 is located in this working space and contacts the two grinding wheels for grinding to chamfer. As Figure 4 shown, the first grinding wheel 110 and the second grinding wheel 120 are not in the same vertical space, avoiding mutual interference and ensuring the stable operation of the equipment. Among them, the first grinding wheel 110 is responsible for grinding the edge of the upper surface of the wafer 400. On the wafer 400, a first contact area 410 is formed by the contact between the wafer 400 and the first grinding wheel 110, and the wafer 400 located on the first contact area 410 is subjected to grinding. The second grinding wheel 120 is responsible for grinding the edge of the lower surface of the wafer 400. On the wafer 400, a second contact area 420 is formed by the contact between the wafer 400 and the second grinding wheel 120, and the wafer 400 located on the second contact area 420 is subjected to grinding.

[0070] In other embodiments, the chamfering device may also be provided with only one grinding wheel, that is, the first grinding wheel 110. By moving the first grinding wheel 110, the edge of the wafer 400 can also be ground and chamfered, which will not be elaborated here.

[0071] In order to achieve precise adjustment of the chamfering position of the edge of the wafer 400, the chamfering mechanism 100 further includes a driving assembly (the driving assembly is not shown). There are two sets of driving assemblies, which are respectively connected to and act on the first grinding wheel 110 and the second grinding wheel 120, as Figure 2 、 3 shown, so that the two grinding wheels can move in the first direction, the second direction, and the third direction, where the first direction, the second direction, and the third direction are perpendicular to each other, improving the chamfering accuracy and flexibility. Generally, the first direction and the second direction are the X direction and the Y direction on the horizontal plane respectively, and the third direction is the Z direction in the vertical direction. In this way, the positions of the first contact area 410 and the second contact area 420 on the wafer 400 can be adjusted by the driving assembly. In other words, the edge grinding position of the wafer 400 can be adjusted to complete grinding of various angular positions on the upper edge and the lower edge of the wafer 400.

[0072] It should be noted that the self-rotation drive of the first grinding wheel 110 and the second grinding wheel 120 can be realized by means of a motor. The motor is connected and installed on the drive assembly to rotate the first grinding wheel 110 (the second grinding wheel 120). Driven by the drive assembly, the motor moves with the first grinding wheel 110 (the second grinding wheel 120). Further, the first grinding wheel 110 and the second grinding wheel 120 are centrosymmetric with respect to the position of the wafer 400. It should be noted that the first grinding wheel 110 and the second grinding wheel 120 need to be symmetrically controlled to move, so that the force of the first grinding wheel 110 on the wafer 400 and the force of the second grinding wheel 120 on the wafer 400 are offset against each other, which is beneficial to the uniform force on the wafer 400 during grinding and improves the chamfering quality of the wafer 400.

[0073] The carrier mechanism 200 is used to carry the wafer 400. The carrier mechanism 200 is located on one side of the chamfering mechanism 100 and is used to carry and drive the wafer 400 to rotate. As Figure 1 shown, the carrier mechanism 200 includes a base 210 and a turntable 220; the turntable 220 is rotatably connected to the base 210, has a vertically arranged axis, and can rotate around this axis; the turntable 220 has an adsorption function to adsorb the wafer 400 to prevent the wafer 400 from falling off or displacing during the grinding process. It can be understood that the driving method of the turntable 220 can adopt a motor, a gear assembly, etc., and only need to complete the self-rotation of the turntable 220 around the axis; the top of the turntable 220 has adsorption holes, and a pipeline is opened inside the turntable 220 and is externally connected to a negative pressure source, and a negative pressure is formed inside the turntable 220 to adsorb the wafer 400 placed on the top of the turntable 220. In one embodiment, the top of the turntable 220 is a flat surface to keep the wafer 400 to be processed horizontal.

[0074] The partition mechanism 300 is arranged between the chamfering mechanism 100 and the carrier mechanism 200 and is used to isolate the gap between the chamfering mechanism 100 and the carrier mechanism 200 (specifically, between the turntable 220 and the wafer 400) to prevent the debris 500 from splashing. As Figure 1 shown, the partition mechanism 300 can form an air screen 311 between the turntable 220 and the first grinding wheel 110 (and the second grinding wheel 120) to isolate the grinding debris 500; the partition mechanism 300 includes a nozzle 310, and the nozzle 310 is located between the turntable 220 and the first grinding wheel 110 and is connected to the base 210; the nozzle 310 is used to jet air toward the lower surface of the wafer 400 to form an air screen 311; as Figure 5 shown, in order to enhance the isolation effect of the air screen 311, the jet direction of the nozzle 310 is inclined toward the side of the first grinding wheel 110 to form an obliquely upward air screen 311; in this way, not only can the debris 500 be better guided to discharge, reducing the retention of the debris 500 on the lower surface of the wafer 400, but also the wafer 400 can be further protected from damage.

[0075] Specifically, asFigure 6 As shown, a plurality of nozzles 310 are provided and arranged in a straight line. The projected length of the plurality of nozzles 310 on the wafer 400 is L1, while the arrangement length of the plurality of nozzles 310 is L2, and L1 is less than L2; by arranging the plurality of nozzles 310 in a straight line and the arrangement length L2 being greater than the projected length L1 of the nozzles 310 on the wafer 400, the nozzles 310 can cover a wider area of the lower surface of the wafer 400, thereby more effectively isolating the debris 500 generated during the grinding process of the lower surface of the wafer 400. Further, as Figure 7 , 8 shown, both ends of the arrangement of the nozzles 310 are respectively located outside the projection of the nozzles 310 on the wafer 400. Thus, the nozzles 310 whose projection is outside the wafer 400 are used to blow air upward. Since the arrangement length of the nozzles 310 exceeds the outer edge of the wafer 400, when the nozzles 310 blow air upward and pass through the edge of the wafer 400, according to the Bernoulli effect, the flow velocity at the edge of the wafer 400 is large and forms a negative pressure, and the flow velocity on the upper surface of the wafer 400 is small and forms a positive pressure. Therefore, the air above the wafer 400 forms an air flow towards the outer edge of the wafer 400, which can make the debris 500 above the wafer 400 move into the air flow formed by the nozzles 310 and be carried out. At the same time, under the rotation of the wafer 400, the wafer 400 drives the debris 500 to move, further improving the removal effect of the debris 500.

[0076] Among them, as Figure 6 , 7 shown in 8, it is defined that the projection of the nozzles 310 on the edge of the wafer 400 has a first position 340 and a second position 350, that is, the positions where the straight line where the nozzles 310 are arranged intersects the edge of the wafer 400 on the projection of the wafer 400 are the first position 340 and the second position 350, and the rotation direction of the wafer 400 is from the first position 340 to the second position 350; a collection mechanism 600 is provided above the second position 350 for collecting the debris 500 located on the upper surface of the wafer 400; the collection mechanism 600 includes an electrostatic member, which is arranged in the air flow channel and has static electricity to adsorb the debris 500 in the air flow; by capturing the flying debris 500 through the electrostatic effect, the capture accuracy of the debris 500 is improved.

[0077] It can be understood that near the second position 350, the arrangement of the nozzles 310 exceeds the edge of the wafer 400, so that the debris 500 on the upper surface of the wafer 400 can be carried out by the air flow formed by the Bernoulli effect; near the first position 340, the arrangement of the nozzles 310 exceeds the edge of the wafer 400, improving the isolation effect of the debris 500 on the upper surface of the wafer 400 and preventing splashing.

[0078] In one embodiment, the distance between the nozzle 310 and the lower surface of the wafer 400 is controlled to be between 0.5 cm and 1.0 cm; this distance range is conducive to the nozzle 310 acting accurately and directionally on the lower surface of the wafer 400, preventing air flow disorder, improving the isolation effect of the lower surface and the removal effect of debris 500; and corresponding more accurately and quickly to the height position change of the wafer 400, which is conducive to more precisely adjusting the grinding mechanism.

[0079] Furthermore, in the present application, through the structural design of the nozzle 310, the relative positions of the wafer 400 and the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) can be adjusted through the nozzle 310, which is conducive to the real-time position matching between the wafer 400 and the first grinding wheel 110 and the second grinding wheel 120, and prevents under-grinding or over-grinding of the upper and lower edges of the wafer 400. Specifically, the position adjustment between the wafer 400 and the grinding mechanism is achieved by monitoring the floating and force-bearing of the nozzle 310. Specifically, as Figure 9 、 10 shown, the partition mechanism 300 further includes an elastic member 320. The nozzle 310 is movably connected to the base 210 and is connected to the base 210 through the elastic member 320. The elastic member 320 can drive the nozzle 310 to float or sink through elastic potential energy. A force-bearing area 250 is formed between the elastic member 320 and the base 210, and a pressure sensor 330 is arranged on the force-bearing area 250 to obtain the force condition of the elastic member 320.

[0080] In one embodiment, as Figure 9 shown, a bracket 230 is arranged on the base 210, and the elastic member 320 is an elastic rod 321. The first end of the elastic rod 321 is connected to the nozzle 310, and the second end of the elastic rod 321 is connected to the nail arranged on the base 210. A force-bearing area 250 is formed between the second end of the elastic rod 321 and the bracket 230, and a pressure sensor 330 is arranged on the force-bearing area 250 to obtain the force change of the elastic rod 321. It should be noted that only one elastic rod 321 and one bracket 230 are provided, and multiple nozzles 310 can be connected to the elastic member 321 together through a connection structure; multiple elastic rods 321 and brackets 230 can also be provided and cooperate with the nozzles 310 one by one.

[0081] In another embodiment, as Figure 10As shown, a sleeve 240 is provided on a base 210. The elastic member 320 is a spring 322. The spring 322 is located within the sleeve 240. The first end of the spring 322 is connected to a nozzle 310, and the second end of the spring 322 is connected to the base 210. A stress area 250 is formed between the second end of the spring 322 and the base 210. A pressure sensor 330 is provided on the stress area 250 to obtain the change in the force on the spring 322. It should be noted that only one of the spring 322 and the sleeve 240 is provided, and multiple nozzles 310 are connected to the spring 322 together through a connection structure; multiple springs 322 and sleeves can also be provided and are matched with the nozzles 310 one by one.

[0082] Specifically, when the force on the pressure sensor 330 increases, since the gas source outputs stably, it indicates that the nozzle 310 is pressed down due to the descent of the wafer 400. The reason is that the position of the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) is lower than that of the wafer 400, resulting in a smaller distance between the wafer 400 and the nozzle 310. At this time, excessive grinding occurs between the first grinding wheel 110 above the wafer 400 and the wafer 400, while insufficient grinding occurs between the second grinding wheel 120 below the wafer 400 and the wafer 400. Then, execute: drive the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) to rise, and obtain the parameters of the pressure sensor 330 in real time until the parameters reach the normal range. Here, the normal range refers to the situation where the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 are basically offset. The normal range is a numerical range that fluctuates around the sum of the gravity of the elastic member 320 and the nozzle 310 and the air flow reaction force. On the contrary, when the force on the pressure sensor 330 decreases, since the gas source outputs stably, it indicates that the nozzle 310 floats upward due to the lifting of the wafer 400. The reason is that the position of the grinding mechanism is higher than that of the wafer 400, resulting in a larger distance between the wafer 400 and the nozzle 310. At this time, insufficient grinding occurs between the first grinding wheel 110 above the wafer 400 and the wafer 400, while excessive grinding occurs between the second grinding wheel 120 below the wafer 400 and the wafer 400. Then, execute: drive the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) to descend, and obtain the parameters of the pressure sensor 330 in real time until the parameters reach the normal range. Here, the normal range refers to the situation where the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 are basically offset. The normal range is a numerical range that fluctuates around the sum of the gravity of the elastic member 320 and the nozzle 310 and the air flow reaction force.

[0083] In this way, by obtaining the force condition of the pressure sensor 330, it is possible to analyze whether the wafer 400 is too high or too low, and correspondingly adjust the positions of the first grinding wheel 110 and the second grinding wheel 120 to make the position of the wafer 400 match that between the two grinding wheels, preventing insufficient grinding or excessive grinding.

[0084] The present application also provides a chamfering method, which is applied to the above-mentioned chamfering device; the method includes jetting air from the nozzle 310 to the lower surface of the wafer 400, forming an air screen 311 between the turntable 220 and the first grinding wheel 110 and / or the second grinding wheel 120, so as to prevent the grinding debris 500 from flying into the space between the lower surface of the wafer 400 and the turntable 220. During the chamfering process, the nozzle 310 continuously jets air to the lower surface of the wafer 400 to form a stable air screen 311; meanwhile, the wafer 400 rotates driven by the turntable 220 and contacts the first grinding wheel 110 and the second grinding wheel 120 for grinding to chamfer; due to the existence of the air screen 311, the grinding debris 500 is effectively isolated outside the lower surface of the wafer 400 and the turntable 220, preventing the debris 500 from contaminating the wafer 400 and the device.

[0085] Furthermore, the nozzle 310 is movably connected to the base 210, and the baffle assembly further includes: an elastic member 320, the elastic member 320 is connected between the nozzle 310 and the base 210, the elastic member 320 can drive the nozzle 310 to float or sink through elastic potential energy, and a stress area 250 is formed between the elastic member 320 and the base 210, and a pressure sensor 330 is arranged on the stress area 250, and the pressure sensor 330 is used to obtain the stress condition of the elastic member 320; based on the stress condition of the elastic member 320, the first grinding wheel 110 and the second grinding wheel 120 are driven to float or sink so that the upper and lower edges of the wafer 400 are evenly stressed.

[0086] Specifically, when the force received by the pressure sensor 330 increases, since the air source outputs stably, it indicates that the nozzle 310 is pressed down by the descent of the wafer 400. The reason is that the positions of the grinding mechanisms (the first grinding wheel 110 and the second grinding wheel 120) are relatively lower than that of the wafer 400, resulting in a smaller distance between the wafer 400 and the nozzle 310; at this time, excessive grinding occurs between the first grinding wheel 110 above the wafer 400 and the wafer 400, while insufficient grinding occurs between the second grinding wheel 120 below the wafer 400 and the wafer 400; then execute: drive the grinding mechanisms (the first grinding wheel 110 and the second grinding wheel 120) to rise, and obtain the parameters of the pressure sensor 330 in real time until the parameters reach the normal range, where the normal range refers to the situation where the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 are basically offset, and the normal range is a numerical range that fluctuates near the sum of the gravity of the elastic member 320 and the nozzle 310 and the air flow reaction force.

[0087] On the contrary, when the force on the pressure sensor 330 decreases, since the air source outputs stably, it indicates that the nozzle 310 floats upward due to the wafer 400 being lifted. The reason is that the position of the grinding mechanism is relatively above the wafer 400, resulting in an increase in the distance between the wafer 400 and the nozzle 310. At this time, the grinding between the first grinding wheel 110 above the wafer 400 and the wafer 400 is insufficient, while the grinding between the second grinding wheel 120 below the wafer 400 and the wafer 400 is excessive. Then, execute: drive the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) to descend, and obtain the parameters of the pressure sensor 330 in real time until the parameters reach the normal range. Here, the normal range refers to the situation where the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 are basically offset. The normal range is a numerical range that fluctuates near the sum of the gravity of the elastic member 320 and the nozzle 310 and the reaction force of the air flow.

[0088] In this way, by obtaining the force condition of the pressure sensor 330, it is possible to analyze whether the wafer 400 is too high or too low, and correspondingly adjust the positions of the first grinding wheel 110 and the second grinding wheel 120 to make the position of the wafer 400 match that between the two grinding wheels, preventing insufficient grinding or excessive grinding.

[0089] Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications to these embodiments once they know the basic creative concept. Therefore, the appended claims are intended to be interpreted to include the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0090] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A chamfering device, characterized in that: include: A chamfering mechanism (100), wherein the chamfering mechanism (100) comprises: a first grinding wheel (110), the first grinding wheel (110) having a first rotating shaft arranged transversely, and the first grinding wheel (110) being capable of rotating around the first rotating shaft; the first grinding wheel (110) being used for grinding an edge of a wafer (400); A carrier mechanism (200), the carrier mechanism (200) being located on one side of the chamfering mechanism (100), the carrier mechanism (200) comprising: Base (210); a turntable (220), the turntable (220) being rotatably connected to the base (210), the turntable (220) having a vertically arranged axial direction and being rotatable about the vertically arranged axial direction, the turntable (220) having an adsorption function, the turntable (220) being used to carry a wafer (400) and drive the wafer (400) to rotate, so that the axial side of the wafer (400) contacts the first grinding wheel (110) to achieve chamfering; The wafer (400) contacts the first grinding wheel (110) to form a first contact area (410), and the chamfering mechanism (100) is movable relative to the carrier mechanism (200) to adjust the formation position of the first contact area (410) at the edge of the wafer (400); and A barrier mechanism (300), wherein the barrier mechanism (300) comprises: a nozzle (310), the nozzle (310) being located between the turntable (220) and the first grinding wheel (110), the nozzle (310) being connected to the base (210), the nozzle (310) being used to face the lower surface of the wafer (400) to form an air screen (311) that isolates the turntable (220) and the first grinding wheel (110); A plurality of the nozzles (310) are provided, the plurality of the nozzles (310) are arranged in a straight line, a projection length of the plurality of the nozzles (310) on the wafer (400) is L1, an arrangement length of the plurality of the nozzles (310) is L2, and L1<L2; Both ends of the arrangement of the nozzles (310) are respectively located outside the projection of the nozzles (310) on the wafer (400); The projection of the nozzle (310) on the edge of the wafer (400) is defined to have a first position (340) and a second position (350), and the rotation direction of the wafer (400) is from the first position (340) to the second position (350); A collection mechanism (600) is provided above the second position (350), wherein the collection mechanism (600) is used to collect debris (500) located on the upper surface of the wafer (400); The nozzle (310) projected outside the wafer (400) forms an air flow channel upwards, and the nozzle (310) supplies air into the air flow channel to drive the debris (500); the collection mechanism (600) comprises: An electrostatic component is arranged in the airflow channel, and the electrostatic component has static electricity to absorb debris (500) in the airflow.

2. A chamfering device according to claim 1, characterized in that: The spraying direction of the nozzle (310) is inclined toward one side of the first grinding wheel (110), so that the air screen (311) is inclined upward.

3. A chamfering device according to claim 1 or 2, characterized in that: The chamfering mechanism (100) further comprises: a second grinding wheel (120), wherein the second grinding wheel (120) has a second rotating shaft arranged transversely, and the second grinding wheel (120) can rotate around the second rotating shaft; the second grinding wheel (120) is located below the first grinding wheel (110), a working space is formed between the second grinding wheel (120) and the first grinding wheel (110), and the wafer (400) is located in the working space and is in contact with the first grinding wheel (110) and the second grinding wheel (120) for grinding to chamfer; the wafer (400) is in contact with the second grinding wheel (120) to form a second contact area (420), and the chamfering mechanism (100) can move relative to the carrier mechanism (200) to adjust the formation position of the second contact area (420) at the edge of the wafer (400); The first grinding wheel (110) and the second grinding wheel (120) are not in the same vertical space.

4. A chamfering device according to claim 2, characterized in that: The distance between the nozzle (310) and the lower surface of the wafer (400) is between 0.5 cm and 1.0 cm.

5. A chamfering device according to claim 3, characterized in that: The chamfering mechanism (100) further comprises a driving assembly, wherein the driving assembly comprises two groups, and the two groups of driving assemblies are respectively connected to and act on the first grinding wheel (110) and the second grinding wheel (120), so that the first grinding wheel (110) and the second grinding wheel (120) can move in a first direction, a second direction and a third direction, wherein the first direction, the second direction and the third direction are perpendicular to each other.

6. A chamfering method, characterized in that: The chamfering device as claimed in any one of claims 1 to 5 comprises: causing the nozzle (310) to spray air toward the lower surface of the wafer (400), forming an air screen (311) between the turntable (220) and the first grinding wheel (110) and / or the second grinding wheel (120) to prevent grinding debris (500) from flying into between the lower surface of the wafer (400) and the turntable (220).

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