Cooling method in semiconductor grinding process
By applying an electric field during semiconductor polishing to form a plasma region, introducing nitrogen to form a nitride layer, and transferring heat to the substrate through heat conduction, the problem of sharp increase in surface temperature during semiconductor polishing is solved, and more effective temperature control and product quality improvement is achieved.
Patent Information
- Application Number
- CN202311403108.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-26
- Publication Date
- 2025-04-29
AI Technical Summary
During semiconductor grinding, due to the grinding heat and friction, the surface temperature of the semiconductor device may rise sharply, resulting in structural damage and thermal expansion, affecting the size and shape of the final product.
During the polishing process of the semiconductor, an electric field is applied to generate a plasma formation region, nitrogen is introduced into a gas injector to form a nitride layer, and heat in the nitride layer is transferred to the substrate of the semiconductor through heat conduction.
Effectively control the surface temperature of the semiconductor, reduce the surface temperature during the grinding process, thereby preventing structural damage and thermal expansion, and ensuring the accuracy of product size and shape.
Smart Images
Figure CN119897803A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of semiconductor technology, and in particular to a cooling method during a semiconductor grinding process. Background Art
[0002] Semiconductor devices usually need to be ground to obtain the required size, shape and flatness. During the grinding process of semiconductors, the temperature of the ground area may rise sharply due to the grinding heat and friction. High temperature can cause structural damage to semiconductor devices and even cause thermal expansion of semiconductor devices, affecting the size and shape of the final product. Therefore, it is crucial to reduce the surface temperature during semiconductor grinding. Summary of the invention
[0003] The purpose of the embodiments of the present invention is to provide a method for cooling a semiconductor during grinding, which can more effectively control the surface temperature of the semiconductor during grinding, thereby reducing the surface temperature of the semiconductor during grinding.
[0004] In order to achieve the above object, an embodiment of the present invention provides a method for cooling a semiconductor during polishing, comprising:
[0005] During the polishing process of the semiconductor, an electric field is applied to the surface of the semiconductor to generate a plasma formation region;
[0006] introducing nitrogen gas through a gas injector to form a nitride layer in the plasma forming region;
[0007] The heat in the nitride layer is transferred to the semiconductor substrate through heat conduction on the surface of the semiconductor.
[0008] Furthermore, the frequency of the electric field is 100-200 kHz.
[0009] Furthermore, the thickness of the nitride layer is 10-50 nm.
[0010] Furthermore, the heat conduction effect is achieved through a heat sink on the substrate.
[0011] Compared with the prior art, the embodiment of the present invention provides a method for cooling the semiconductor during grinding. First, during the grinding of the semiconductor, an electric field is applied to the surface of the semiconductor to generate a plasma formation area; then, nitrogen is introduced through a gas injector to form a nitride layer in the plasma formation area; finally, through the heat conduction effect of the semiconductor surface, the heat in the nitride layer is transferred to the semiconductor substrate. The embodiment of the present invention can more effectively control the surface temperature of the semiconductor during the grinding process, thereby reducing the surface temperature of the semiconductor during the grinding process. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 It is a flow chart of a preferred embodiment of a cooling method in a semiconductor grinding process provided by the present invention. DETAILED DESCRIPTION
[0013] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.
[0014] The embodiment of the present invention provides a method for cooling a semiconductor during grinding. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for cooling a semiconductor during grinding provided by the present invention, wherein the method comprises steps S11 to S13:
[0015] Step S11, during the polishing process of the semiconductor, applying an electric field to the surface of the semiconductor to generate a plasma forming area;
[0016] Step S12, introducing nitrogen gas through a gas injector to form a nitride layer in the plasma forming region;
[0017] Step S13: Transfer the heat in the nitride layer to the semiconductor substrate through heat conduction on the surface of the semiconductor.
[0018] In a specific implementation, first, during the grinding process of the semiconductor, an electric field (generally a high-frequency electric field) is applied to the surface of the semiconductor, and the applied electric field will form a plasma formation region on the surface of the semiconductor; then, nitrogen gas is introduced into the formed plasma formation region through a gas injector to form a nitride layer in the plasma formation region, wherein the nitride oxide layer can resist the heat generated during the grinding of the semiconductor and reduce the surface temperature of the semiconductor; finally, through the heat conduction on the surface of the semiconductor, the heat in the nitride layer is transferred to the substrate of the semiconductor.
[0019] In another preferred embodiment, the frequency of the electric field is 100-200 kHz.
[0020] Specifically, in combination with the above embodiments, the frequency of the electric field applied on the surface of the semiconductor is usually between 100 kHz and 200 kHz.
[0021] Exemplarily, the frequency of the electric field can be 100kHz, 110kHz, 120kHz, 130kHz, 140kHz, 150kHz, 160kHz, 170kHz, 180kHz, 190kHz or 200kHz, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.
[0022] In yet another preferred embodiment, the thickness of the nitride layer is 10-50 nm.
[0023] Specifically, in combination with the above embodiments, the thickness of the nitride layer formed in the plasma forming region is generally between 10 nanometers and 50 nanometers.
[0024] Exemplarily, the thickness of the nitride layer may be 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers, 40 nanometers, 45 nanometers or 50 nanometers, and may also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.
[0025] In yet another preferred embodiment, the heat conduction effect is achieved through a heat sink on the substrate.
[0026] Specifically, in combination with the above embodiments, the heat conduction effect on the surface of the semiconductor can be achieved through a heat sink on the semiconductor substrate, thereby achieving the purpose of reducing the surface temperature of the semiconductor.
[0027] In combination with all the above embodiments, the implementation process of the present scheme is described below through the first specific embodiment, including: (1) during the grinding process of the semiconductor, a high-frequency electric field with a frequency of 100 kHz is applied to the surface of the semiconductor, and the applied high-frequency electric field will form a plasma formation area on the surface of the semiconductor; (2) in the formed plasma formation area, nitrogen is introduced through a gas injector to form a nitride layer with a thickness of 10 nm in the plasma formation area; (3) through the heat conduction on the surface of the semiconductor, the heat in the nitride layer is transferred to the semiconductor substrate.
[0028] In combination with all the above embodiments, the implementation process of the present scheme is described below through a second specific embodiment, including: (1) During the grinding process of the semiconductor, a high-frequency electric field with a frequency of 150 kHz is applied to the surface of the semiconductor, and the applied high-frequency electric field will form a plasma formation area on the surface of the semiconductor; (2) In the formed plasma formation area, nitrogen gas is introduced through a gas injector to form a nitride layer with a thickness of 30 nm in the plasma formation area; (3) Through the heat conduction on the surface of the semiconductor, the heat in the nitride layer is transferred to the semiconductor substrate.
[0029] In combination with all the above embodiments, the implementation process of the present scheme is described below through the third specific embodiment, including: (1) during the grinding process of the semiconductor, a high-frequency electric field with a frequency of 200 kHz is applied to the surface of the semiconductor, and the applied high-frequency electric field will form a plasma formation area on the surface of the semiconductor; (2) nitrogen is introduced into the formed plasma formation area through a gas injector to form a nitride layer with a thickness of 50 nm in the plasma formation area; (3) through the heat conduction on the surface of the semiconductor, the heat in the nitride layer is transferred to the semiconductor substrate.
[0030] In summary, the cooling method in the semiconductor grinding process provided by the embodiment of the present invention is, first, in the semiconductor grinding process, an electric field is applied to the surface of the semiconductor to generate a plasma formation area; then, nitrogen is introduced through a gas injector to form a nitride layer in the plasma formation area; finally, through the thermal conduction effect of the semiconductor surface, the heat in the nitride layer is transferred to the semiconductor substrate. The embodiment of the present invention can more effectively control the surface temperature of the semiconductor during the grinding process, thereby reducing the surface temperature of the semiconductor during the grinding process; further, the embodiment of the present invention can be applied to the manufacture of semiconductor devices, especially silicon-based chips, and can provide a more reliable and efficient cooling method for the manufacture of semiconductor devices.
[0031] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.
Claims
1. A method for cooling a semiconductor during polishing, characterized in that: include: During the polishing process of the semiconductor, an electric field is applied to the surface of the semiconductor to generate a plasma formation region; introducing nitrogen gas through a gas injector to form a nitride layer in the plasma forming region; The heat in the nitride layer is transferred to the semiconductor substrate through heat conduction on the surface of the semiconductor.
2. The method for cooling a semiconductor during polishing as claimed in claim 1, wherein: The frequency of the electric field is 100-200 kHz.
3. The method for cooling a semiconductor during polishing as claimed in claim 1, wherein: The thickness of the nitride layer is 10-50 nm.
4. The method for cooling a semiconductor during polishing as claimed in claim 1, wherein: The heat conduction effect is achieved through the heat sink on the substrate.