Capacitor and manufacturing method thereof

Abstract

The invention provides a capacitor and a manufacturing method thereof. A capacitor according to one aspect includes: a substrate in which a groove having a first depth from an upper surface is formed; and a body including a first internal electrode and a second internal electrode stacked with a dielectric layer disposed between the first internal electrode and the second internal electrode, the body being disposed on the groove, in which a width of the groove may be one time or more than a first depth of the groove, and a second depth of the groove may be one time or more than a second depth of the groove. And a length of the groove may be one time or greater than the first depth of the groove.

Description

Technical Field

[0001] The present disclosure relates to a capacitor and a method for manufacturing the same. Background Art

[0002] Electronic components used in electronic devices include capacitors, inductors, piezoelectric elements, varistors, or thermistors. Among these ceramic electronic components, stacked capacitors are used in various electronic devices because they have a small size, ensure high capacity, and can be easily mounted.

[0003] For example, stacked capacitors are chip capacitors mounted on substrates of various electronic products (imaging devices such as liquid crystal displays (LCDs), plasma display panels, organic light emitting diodes (OLEDs), computers, personal portable terminals, smartphones, etc.) for charging or discharging.

[0004] With the recent trend toward smaller and thinner electronic products, demand for capacitors with higher capacitance than existing stacked capacitors is increasing. Summary of the invention

[0005] At least one of the embodiments is directed to providing a capacitor having high capacity and a method for manufacturing the same.

[0006] However, the problems to be solved by the embodiments of the present disclosure are not limited to the above-mentioned problems, and can be expanded in various ways within the scope of the technical ideas included in the present disclosure.

[0007] A capacitor according to one aspect includes: a substrate including a groove having a depth from an upper surface of the substrate; and a body including a first inner electrode and a second inner electrode stacked and a dielectric layer disposed between the first inner electrode and the second inner electrode, and the body is disposed on the groove. The width of the groove may be 1 times or more of the depth of the groove, and the length of the groove may be 1 times or more of the depth of the groove.

[0008] The capacitor may further include: a first external electrode disposed on an upper surface of one end portion of the body in a length direction; and a second external electrode disposed on an upper surface of the other end portion of the body in the length direction.

[0009] The body may further include a first electrode separator disposed between the first outer electrode and the second inner electrode.

[0010] One end portion of the second inner electrode may have a structure recessed into an inner side of the groove at the one end portion of the body in the length direction, and the first electrode separation layer may be disposed in a space between two adjacent dielectric layers.

[0011] The body may further include a second electrode separator disposed between the second outer electrode and the first inner electrode.

[0012] One end portion of the first inner electrode may have a structure recessed into an inner side of the groove at the other end portion of the body in the length direction, and the second electrode separation layer may be disposed in a space between two adjacent dielectric layers.

[0013] The capacitor may further include a lower insulating layer disposed between the groove and the body.

[0014] The capacitor may also include: a first external electrode connected to the first internal electrode on the upper surface of the body; a second external electrode connected to the second internal electrode on the upper surface of the body; and an insulating layer disposed on a portion of the upper surface of the body other than a portion where the first external electrode and the second external electrode are disposed.

[0015] The groove may have a structure in which one side in a width direction is open in a direction of a side surface of the substrate, and one side in the width direction of the body may be disposed on the side surface of the substrate.

[0016] The base plate may include a longitudinal ridge protruding upward from a bottom surface of the groove and disposed to be spaced apart from both sides of the groove in a width direction.

[0017] The base plate may include a transverse ridge protruding upward from a bottom surface of the groove and disposed to be spaced apart from both sides of the groove in a length direction.

[0018] The capacitor may further include: a first external electrode connected to the first internal electrode on an upper surface of the body; and a second external electrode connected to the second internal electrode on the upper surface of the body. A boundary between the body and the substrate in a region below the first external electrode and the second external electrode may be inclined relative to the upper surface of the substrate.

[0019] The width of the groove may be 1 time or more and 44 times or less than the depth of the groove, and the length of the groove may be 1 time or more and 54 times or less than the depth of the groove.

[0020] The depth of the groove may be 100 μm or less.

[0021] The first internal electrode and the second internal electrode may be disposed only in the groove.

[0022] According to another aspect, a capacitor manufacturing method includes: forming a groove on a substrate, the groove being recessed from the upper surface of the substrate in a direction toward the bottom surface of the substrate; forming an inner electrode layer and a dielectric layer on the upper surface of the substrate and on the groove; forming a body including the dielectric layer and an inner electrode formed by the inner electrode layer on the groove by removing portions of the inner electrode layer and the dielectric layer that are arranged outside the groove; and forming an outer electrode connected to the inner electrode on the body.

[0023] The removing of the portions of the inner electrode layer and the dielectric layer may be performed by a polishing process.

[0024] A capacitor according to another aspect includes: a substrate including a groove having a depth from an upper surface of the substrate; and a body including a first inner electrode and a second inner electrode stacked and a dielectric layer disposed between the first inner electrode and the second inner electrode, and the body is disposed on the groove. The first inner electrode and the second inner electrode may be disposed only in the groove.

[0025] The capacitor may also include: a first external electrode, arranged on the upper surface of one end of the body and the upper surface of the substrate to be connected to the first internal electrode; and a second external electrode, arranged on the upper surface of the other end of the body and the upper surface of the substrate to be connected to the second internal electrode.

[0026] The capacitor may further include: a first electrode separator layer disposed between the first external electrode and the second internal electrode; and a second electrode separator layer disposed between the second external electrode and the first internal electrode.

[0027] According to at least one embodiment, a capacitor having high capacity and a method of manufacturing the same may be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A capacitor according to an embodiment is shown.

[0029] Figure 2 yes Figure 1 A vertical cross-section of a capacitor along the width direction.

[0030] Figure 3 yes Figure 1 Vertical cross-section of a capacitor along its length.

[0031] Figures 4 to 11 A method of manufacturing a capacitor according to an embodiment is shown.

[0032] Fig.12 is a vertical cross-sectional view along the width direction of a capacitor according to another embodiment.

[0033] Fig.13 is a vertical cross-sectional view along the length direction of a capacitor according to another embodiment.

[0034] Fig.14 is a top plan view showing a cutting line for cutting in a method of manufacturing a capacitor according to another embodiment.

[0035] Fig.15 Shown according to Fig.14 A vertical cross-sectional view of one end portion of a capacitor manufactured by the manufacturing method along the width direction.

[0036] Fig.16 is a top plan view showing a cutting line for cutting in a method of manufacturing a capacitor according to another embodiment. DETAILED DESCRIPTION

[0037] In the following detailed description, only certain exemplary embodiments of the present disclosure are shown and described by way of illustration only. As those skilled in the art will appreciate, the described exemplary embodiments can be modified in various different ways, all without departing from the spirit or scope of the present disclosure.

[0038] In order to clearly explain the present disclosure, contents irrelevant to the explanation are omitted, and the same or similar reference numerals are used to designate the same or similar components throughout the specification.

[0039] In addition, for better understanding and ease of description, the size and thickness of each component shown in the drawings are arbitrarily shown, and therefore the present disclosure is not necessarily limited to the contents shown. In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. In addition, in the drawings, the thickness of some layers and regions are exaggerated for better understanding and ease of description.

[0040] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element, or other elements or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements. In addition, when an element is "above" or "on" a reference component, the element is located above or below the reference component, and does not necessarily mean that the element is located "above" or "on" relative to the direction of gravity.

[0041] In addition, unless explicitly described to the contrary, the word “comprise” and variations such as “comprises” or “has” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0042] Furthermore, throughout the specification, “on a plane” means observing a target component from above, and “on a cross section” means observing a cross section obtained by vertically cutting the target component from the side.

[0043] Figure 1 shows a capacitor according to an embodiment, Figure 2 yes Figure 1 A vertical cross-sectional view of the capacitor along the width direction W, and Figure 3 yes Figure 1 A vertical cross-sectional view of the capacitor along the length direction L.

[0044] Reference Figures 1 to 3 , the capacitor 1 according to the embodiment may include a substrate 10 , a body 20 , and an external electrode 30 .

[0045] The substrate 10 has a predetermined area. The substrate 10 may be formed of an insulating material. The substrate 10 may be a silicon substrate or the like. The substrate 10 includes an upper surface and a lower surface opposite to each other. The substrate 10 has a predetermined thickness along a vertical direction T, and the upper surface and the lower surface are separated from each other along the vertical direction T.

[0046] The thickness of the substrate 10 may be greater than 100 μm. The substrate 10 may have a predetermined width along a width direction W, and the width direction W intersects with the vertical direction T. The width direction W may be orthogonal to the vertical direction T. The substrate 10 may have a predetermined length along a length direction L, and the length direction L may intersect with the vertical direction T and the width direction W. The length direction L may be orthogonal to the vertical direction T and the width direction W. The length of the substrate 10 may be greater than the width of the substrate 10. For example, the length of the substrate 10 may be 1.5 times or more and 2.5 times or less than the width of the substrate 10. The substrate 10 may have a substantially hexahedral shape.

[0047] A body receiving groove 100 (eg, a groove for receiving a body) is formed on an upper surface of the base plate 10 .

[0048] The body receiving groove 100 has a structure that enters a predetermined depth from the upper surface to the lower surface of the substrate 10. The body receiving groove 100 may have a first depth D1 along the vertical direction T. The first depth D1 of the body receiving groove 100 may be a distance between the upper surface of the substrate 10 and a point in the body receiving groove 100 that is closest to the lower surface of the substrate 10.

[0049] The body receiving groove 100 may have a predetermined width in the width direction W. The width W1 of the body receiving groove 100 may be a distance between two ends having the largest distance in the width direction W. The width W1 of the body receiving groove 100 may be measured at an upper end of the body receiving groove 100 .

[0050] The side surface of the main body receiving tank 100 along the width direction W may form a first angle α with respect to the horizontal direction. Figure 2, the first angle α may be an inclination angle of a straight line connecting the top and the bottom of the side surface of the body accommodating groove 100 in the width direction W with respect to the width direction W. The first angle α may have a value of 90° or less.

[0051] The width W1 of the main body receiving groove 100 is set to be 1 times or more of the first depth D1 of the main body receiving groove 100. For example, the width W1 of the main body receiving groove 100 may be 1 times or more and 44 times or less of the first depth D1 of the main body receiving groove 100. The first depth D1 of the main body receiving groove 100 may be 100 μm or less. In addition, the width W1 of the main body receiving groove 100 may be 100 μm or more. The width W1 of the main body receiving groove 100 may be 100 μm or more and 1300 μm or less.

[0052] The body receiving tank 100 may have a predetermined length L1 along the length direction L. The length L1 of the body receiving tank 100 may be a distance between both ends having a maximum distance along the length direction L. The length L1 of the body receiving tank 100 may be measured at the top of the body receiving tank 100 .

[0053] The side surface of the body receiving tank 100 along the length direction L may form a second angle β with respect to the horizontal direction. The second angle β may be an inclination angle of a straight line connecting the top and bottom of the side surface of the body receiving tank 100 along the length direction L with respect to the length direction L. The second angle β may have a value of 90° or less.

[0054] The length L1 of the main body receiving groove 100 is set to 1 times or more of the first depth D1 of the main body receiving groove 100. As an example, the length L1 of the main body receiving groove 100 may be 1 times or more and 54 times or less of the first depth D1 of the main body receiving groove 100. The first depth D1 of the main body receiving groove 100 may be 100μm or less. In addition, the length L1 of the main body receiving groove 100 may be 100μm or more. The length L1 of the main body receiving groove 100 may be 100μm or more and 1600μm or less. The length L1 of the main body receiving groove 100 may be greater than the width W1 of the main body receiving groove 100.

[0055] The body 20 is disposed in the body receiving groove 100. The body 20 includes an inner electrode 210 and a dielectric layer 220.

[0056] The inner electrode 210 is stacked in the body receiving groove 100. The inner electrode 210 is provided as a conductive material. The inner electrode 210 may be formed of a metal material. The end of the inner electrode 210 in the width direction W may be inclined upward along the side surface of the body receiving groove 100 in the width direction W. The end of the inner electrode 210 in the length direction L may be inclined upward along the side surface of the body receiving groove 100 in the length direction L.

[0057] The dielectric layer 220 is disposed between the inner electrodes 210 adjacent to each other in the vertical direction T. In addition, the dielectric layer 220 may be disposed on the inner electrode 210 disposed on the top. The dielectric layer 220 may be formed of one of an oxide material such as Al2O3, ZrO2, HfO2, etc. and a nitride material such as AlN, etc. Alternatively, the dielectric layer 220 may be formed of at least two of an oxide material (such as Al2O3, ZrO2, HfO2, etc.) and a nitride material (such as AlN, etc.). Alternatively, the dielectric layer 220 may be formed of ZAZ, which is a ZrO2-Al2O3-ZrO2 composite layer.

[0058] The internal electrode 210 may include a first internal electrode 211 and a second internal electrode 212 .

[0059] The first inner electrode 211 and the second inner electrode 212 are stacked in the body receiving tank 100. The first inner electrode 211 and the second inner electrode 212 may be alternately stacked. The dielectric layer 220 may be disposed between the first inner electrode 211 and the second inner electrode 212. The first inner electrode 211 and the second inner electrode 212 are provided as a conductive material. The first inner electrode 211 may be a metal material. The second inner electrode 212 may be a metal material. The first inner electrode 211 and the second inner electrode 212 may be formed of different materials. Therefore, the first inner electrode 211 and the second inner electrode 212 may be subjected to selective etching. For example, the first inner electrode 211 may include molybdenum, and the second inner electrode 212 may include titanium.

[0060] The lower insulating layer 201 may be disposed between the body receiving groove 100 and the body 20. That is, the lower insulating layer 201 may be disposed on the body receiving groove 100, and the body 20 may be disposed on the lower insulating layer 201. The first internal electrode 211 or the second internal electrode 212 may be disposed on the lower insulating layer 201. The lower insulating layer 201 may be silicon oxide (SiO2) or the like.

[0061] The external electrode 30 is connected to the internal electrode 210 of the body 20. The external electrode 30 may be disposed on the body 20. In addition, some regions of the external electrode 30 may be disposed on the substrate 10. In this case, an upper insulating layer 35 may be disposed between the external electrode 30 and the substrate 10. The upper insulating layer 35 may be aluminum oxide (Al2O3), silicon oxide (SiO2), or the like.

[0062] The boundary between the body 20 and the substrate 10 in the lower region of the external electrode 30 may be inclined relative to a horizontal direction (e.g., an upper surface of the substrate 10) orthogonal to the vertical direction T. In addition, the boundary between the body 20 and the substrate 10 in the lower region of the external electrode 30 may be inclined relative to the vertical direction T and the horizontal direction.

[0063] The external electrode 30 includes a first external electrode 31 and a second external electrode 32 .

[0064] The first external electrode 31 is disposed on the upper surface of the body 20. The first external electrode 31 may be disposed on the upper surface of one end of the body 20 in the length direction L. The boundary between the body 20 and the substrate 10 in the lower region of the first external electrode 31 may be inclined relative to the horizontal direction orthogonal to the vertical direction T. In addition, a portion of the first external electrode 31 may be disposed on the upper surface of the substrate 10. The first external electrode 31 is connected to the first internal electrode 211. That is, the first external electrode 31 is disposed on the upper surface of the body 20 and is connected to the first internal electrode 211 exposed through the upper surface of the body 20. That is, the first external electrode 31 may be directly connected to one end of the first internal electrode 211 exposed on the upper surface of the body 20.

[0065] At one end of the body 20 along the length direction L, the first electrode separator 231 is disposed outside one end of the second inner electrode 212. That is, at one end of the body 20 along the length direction L, one end of the second inner electrode 212 may have a structure that enters the inside of the body receiving groove 100. In addition, since the second inner electrode 212 has a structure that enters the inside of the body receiving groove 100, the first electrode separator 231 may be disposed in a space formed between two adjacent dielectric layers 220. The first electrode separator 231 is provided as an insulating material. For example, the first electrode separator 231 may be provided as aluminum oxide (Al2O3), silicon oxide, etc. Therefore, the first electrode separator 231 is provided between the first outer electrode 31 and the second inner electrode 212. The first outer electrode 31 is electrically separated from the second inner electrode 212 by the first electrode separator 231.

[0066] The second external electrode 32 is disposed on the upper surface of the body 20. The second external electrode 32 may be disposed on the upper surface of the other end portion of the body 20 in the length direction L. The boundary between the body 20 and the substrate 10 in the lower region of the second external electrode 32 may be inclined relative to the horizontal direction orthogonal to the vertical direction T. In addition, a portion of the second external electrode 32 may be disposed on the upper surface of the substrate 10. The second external electrode 32 is connected to the second internal electrode 212. That is, the second external electrode 32 is disposed on the upper surface of the body 20 and is connected to the second internal electrode 212 exposed through the upper surface of the body 20. That is, the second external electrode 32 may be directly connected to one end of the second internal electrode 212 exposed on the upper surface of the body 20.

[0067] At the other end of the body 20 along the length direction L, the second electrode separator 232 is disposed at one end of the first internal electrode 211. That is, at the other end of the body 20 along the length direction L, one end of the first internal electrode 211 may have a structure that enters the inside of the body receiving groove 100. In addition, since the first internal electrode 211 has a structure that enters the inside of the body receiving groove 100, the second electrode separator 232 may be disposed in a space formed between two adjacent dielectric layers 220. The first electrode separator 231 and the second electrode separator 232 may be arranged in opposite directions, and the central area of ​​the body 20 is disposed between the first electrode separator 231 and the second electrode separator 232. The second electrode separator 232 is provided as an insulating material. For example, the second electrode separator 232 may be provided as aluminum oxide (Al2O3), silicon oxide, etc. Therefore, the second electrode separator 232 is provided between the second external electrode 32 and the first internal electrode 211. The second external electrode 32 is electrically separated from the first internal electrode 211 by the second electrode separator 232.

[0068] The insulating layer 40 may be disposed on a portion of the upper surface of the body 20 except for a portion where the external electrode 30 is disposed. That is, on the upper surface of the body 20, the insulating layer 40 is disposed in a region other than a region where the external electrode 30 is disposed in a region where the end of the internal electrode 210 is exposed, thereby insulating the internal electrode 210 from the outside. For example, the insulating layer 40 may be formed to cover a portion of the upper surface of the body 20 except for a portion where the external electrode 30 is disposed. In addition, the insulating layer 40 may be disposed on the upper surface of the substrate 10. Figure 1 The insulating layer 40 is exemplarily shown as being disposed on the upper surface of the body 20 and the upper surface of the substrate 10 except for the portion where the external electrode 30 is disposed. The insulating layer 40 may be provided as aluminum oxide (Al2O3), silicon oxide, or the like.

[0069] According to the embodiment, the capacitor 1 has a structure in which a body 20 forming capacitance is received in a body receiving groove 100 formed in a substrate 10. Therefore, the substrate 10 and the body 20 may be stably combined with each other.

[0070] In addition, according to the embodiment, the capacitor 1 has a structure in which the body 20 is accommodated in the body accommodating groove 100 formed in the substrate 10 , and thus the capacitor 1 may have a high capacity while having a thin thickness.

[0071] Figures 4 to 11 A method of manufacturing a capacitor according to an embodiment is shown.

[0072] In the following, reference will be made to Figures 4 to 11 A method of manufacturing the capacitor 1 according to the embodiment is described.

[0073] Reference Figure 4, a substrate S is provided. The substrate S may be a silicon substrate or the like. The substrate S may be provided with an area larger than the area of ​​the two main body receiving grooves 100. Therefore, a plurality of (eg, two) main body receiving grooves 100 may be formed on one substrate S. For ease of explanation, Figure 4 An area in which one body receiving groove 100 is formed in the substrate S is shown.

[0074] Reference Figure 5 , a main body receiving groove 100 is formed on the upper surface of the substrate S in a downward direction. The main body receiving groove 100 may be formed by an etching process. As the etching process, a wet etching process using chemicals, a dry etching process using plasma, etc. may be used. When the etching process is performed by wet etching, the side wall of the main body receiving groove 100 may have an inclination angle of about 54° or more and about 55° or less. When the etching process is performed by dry etching, the inclination angle of the side wall of the main body receiving groove 100 may be adjusted to about 54° or more and about 55° or less.

[0075] Reference Figure 6 , internal electrode layers IE1 and IE2 and a dielectric layer DL are formed on a substrate S to form a body 20. The internal electrode layers IE1 and IE2 and the dielectric layer DL may be alternately formed. Specifically, in order to form the body 20, the internal electrode layers IE1 and IE2 may be alternately formed, and the dielectric layer DL may be formed between the internal electrode layers IE1 and IE2. Among the internal electrode layers IE1 and IE2 and the dielectric layer DL used to form the body 20, the dielectric layer DL may be formed last. Therefore, the dielectric layer DL may be disposed on the internal electrode layers IE1 and IE2 disposed at the top.

[0076] The internal electrode layers IE1 and IE2 and the dielectric layer DL may be formed by a deposition process. The internal electrode layers IE1 and IE2 may be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The dielectric layer DL may be formed using CVD, ALD, etc.

[0077] The internal electrode layers IE1 and IE2 may include a first internal electrode layer IE1 and a second internal electrode layer IE2. The first internal electrode layer IE1 and the second internal electrode layer IE2 may be formed alternately. Different materials may be used to form the first internal electrode layer IE1 and the second internal electrode layer IE2. For example, the first internal electrode layer IE1 may be formed using molybdenum, and the second internal electrode 212 may be formed using titanium.

[0078] In addition, a lower insulating layer I may be formed on the substrate S before forming the internal electrode layers IE1 and IE2. Thereafter, the internal electrode layers IE1 and IE2 and the dielectric layer DL for forming the body 20 may be formed on the lower insulating layer I. In order to form the lower insulating layer I, a CVD process, an ALD process, etc. may be used. In addition, the lower insulating layer I may be formed by ion implantation with respect to the substrate S. For example, the lower insulating layer I may be silicon oxide (SiO2) or the like.

[0079] Reference Figure 7 , in the inner electrode layers IE1 and IE2 and the dielectric layer DL, the area formed outside the main body receiving groove 100 is removed. It can be understood that the area formed outside the main body receiving groove 100 is a portion formed in an area higher than the upper surface of the substrate S. The removal of the inner electrode layers IE1 and IE2 and the dielectric layer DL can be performed by a polishing process. For example, the inner electrode layers IE1 and IE2 and the dielectric layer DL can be removed by chemical mechanical polishing (CMP).

[0080] Reference Figure 8 and Fig. 9 , the first internal electrode layer IE1 and the second internal electrode layer IE2 are etched at both ends of the main body receiving groove 100 along the length direction L, respectively, to form the second separation gap G2 and the first separation gap G1. That is, one end of the first internal electrode layer IE1 is etched at the other end of the main body receiving groove 100 along the length direction L to form the first internal electrode 211 whose one end enters the inside of the main body receiving groove 100 through the second separation gap G2. Then, one end of the second internal electrode layer IE2 is etched at one end of the main body receiving groove 100 along the length direction L to form the second internal electrode 212 whose one end enters the inside of the main body receiving groove 100 through the first separation gap G1. Since the first internal electrode layer IE1 and the second internal electrode layer IE2 are set to different materials, the first internal electrode layer IE1 and the second internal electrode layer IE2 can be selectively etched. In order to etch the first internal electrode layer IE1, dry etching using plasma or wet etching using chemicals can be used. In order to etch the second internal electrode layer IE2, dry etching using plasma or wet etching using chemicals can be used. After etching the first internal electrode layer IE1, the second internal electrode layer IE2 may be etched. Alternatively, the first internal electrode layer IE1 may be etched after etching the second internal electrode layer IE2.

[0081] Reference Fig.10 The first and second separation gaps G1 and G2 are filled with an insulating material to form the first and second electrode separation layers 231 and 232. In addition, the insulating material may be filled using CVD, ALD, or the like.

[0082] Reference Fig.11The external electrode 30 is formed on the body 20 in which the internal electrode 210, the first electrode separator 231, and the second electrode separator 232 are formed. The first external electrode 31 is formed on a portion of the body 20 in which the first electrode separator 231 is formed. Therefore, the first external electrode 31 is connected to the first internal electrode 211 at an end portion of one side of the body 20 and is electrically separated from the second internal electrode 212.

[0083] The second external electrode 32 is formed on a portion of the body 20 where the second electrode separation layer 232 is formed. Thus, the second external electrode 32 is connected to the second internal electrode 212 at an end portion of the other side of the body 20 and is electrically separated from the first internal electrode 211.

[0084] In addition, some regions of the first external electrode 31 and some regions of the second external electrode 32 may be formed on the substrate S. In this case, before forming the first external electrode 31 and the second external electrode 32, an upper insulating layer 35 may be formed in regions where the first external electrode 31 and the second external electrode 32 are to be formed on the substrate S. The upper insulating layer 35 may be formed of aluminum oxide (Al2O3), silicon oxide (SiO2), or the like.

[0085] In addition, the insulating layer 40 may be formed in a region other than the region where the external electrode 30 is disposed on the upper surface of the body 20. In this case, the insulating layer 40 may be formed after the external electrode 30 is formed. Alternatively, the insulating layer 40 may be formed before the external electrode 30 is formed. In this case, the insulating layer 40 may be formed together with the upper insulating layer 35 before the external electrode 30 is formed. Alternatively, the insulating layer 40 may be formed when the first separation gap G1 and the second separation gap G2 are filled with an insulating material before the external electrode 30 is formed.

[0086] Thereafter, when a plurality of bodies 20 are formed on the substrate S, each region of the substrate S where the bodies 20 are formed may be cut.

[0087] Fig.12 is a vertical cross-sectional view of a capacitor 2 along a width direction W according to another embodiment.

[0088] Reference Fig.12 , the body receiving groove 100a is formed on the upper surface of the substrate 10a. The body receiving groove 100a may have a predetermined depth along the vertical direction T. The first depth D2 of the body receiving groove 100a may be the distance between the upper surface of the substrate 10a and the point of the body receiving groove 100a that is closest to the lower surface of the substrate 10a.

[0089] The side surface of the body receiving groove 100a along the width direction W may form a first angle α2 relative to the horizontal direction. The first angle α2 may be an inclination angle of a straight line connecting the top and bottom of the side surface of the body receiving groove 100a along the width direction W relative to the width direction W. The first angle α2 may have a value of 90° or less.

[0090] The body receiving tank 100a may include a first longitudinal partition W2a and a second longitudinal partition W2b.

[0091] The first longitudinal partition W2a and the second longitudinal partition W2b may be disposed adjacent to each other along the width direction W of the capacitor 2 (as well as the main body receiving groove 100a and the main body 20a). In the substrate 10a, the longitudinal ridge 110a is disposed in an area where the first longitudinal partition W2a and the second longitudinal partition W2b are adjacent to each other. The longitudinal ridge 110a is disposed to protrude upward from the bottom of the main body receiving groove 100a by a predetermined length. The upper end of the longitudinal ridge 110a is disposed to be lower than the upper surface of the substrate 10a. The distance from the top of the longitudinal ridge 110a to the top surface of the substrate 10a along the vertical direction T is less than the first depth D2 of the main body receiving groove 100a. The longitudinal ridge 110a is disposed to be spaced apart from the side surface of the main body receiving groove 100a along the width direction W. The longitudinal ridge 110a may have a predetermined length along the length direction L.

[0092] The first longitudinal partition W2a may have a first width along the width direction W. The second longitudinal partition W2b may have a second width along the width direction W. The first width may be a distance between one end of the body receiving groove 100a and the center of the longitudinal ridge 110a along the width direction W. The second width may be a distance between the other end of the body receiving groove 100a and the center of the longitudinal ridge 110a along the width direction W.

[0093] The first width may be set to be 1 times or more of the first depth D2 of the body receiving groove 100a. The second width may be set to be 1 times or more of the first depth D2 of the body receiving groove 100a.

[0094] The body 20a is disposed inside the body receiving groove 100a. The body 20a includes an inner electrode 210a (including a first inner electrode 211a and a second inner electrode 212a) and a dielectric layer 220a. The body 20a corresponds to the shape of the body receiving groove 100a, and the size of the area of ​​the body 20a disposed on the longitudinal ridge 110a along the vertical direction T is smaller than the first depth D2.

[0095] A lower insulating layer 201 a may be disposed between the body receiving groove 100 a and the body 20 a .

[0096] The insulating layer 40a may be provided on the body 20a. In addition, the insulating layer 40a may be provided on the substrate 10a. Since the capacitor 20a is provided with the longitudinal ridge 110a in the substrate 10a and thus forms a region in which the size of the body receiving groove 100a in the vertical direction T and the size of the body 20a in the vertical direction T are reduced along the width direction W, the capacitor 20a is Figures 1 to 3 The capacitor 1 is the same or similar, so repeated description will be omitted.

[0097] Fig.13 is a vertical cross-sectional view of a capacitor 3 along a length direction L according to another embodiment.

[0098] Reference Fig.13 , the body receiving groove 100b is formed on the upper surface of the substrate 10b. The body receiving groove 100b may have a predetermined depth along the vertical direction T. The first depth D3 of the body receiving groove 100b may be the distance between the upper surface of the substrate 10b and the point of the body receiving groove 100b closest to the lower surface of the substrate 10b.

[0099] The side surface of the body receiving groove 100b along the length direction L may form a second angle β2 with respect to the horizontal direction. The second angle β2 may be an inclination angle of a straight line connecting the upper end and the lower end of the side surface of the body receiving groove 100b along the length direction L with respect to the length direction L. The second angle β2 may have a value of 90° or less.

[0100] The body receiving tank 100b may include a first transverse partition L2a and a second transverse partition L2b.

[0101] The first lateral partition L2a and the second lateral partition L2b are disposed adjacent to each other along the length direction L of the capacitor 3 (as well as the main body receiving groove 100b and the main body 20b). In the substrate 10b, the lateral ridge 110b may be disposed in an area where the first lateral partition L2a and the second lateral partition L2b are adjacent to each other. The lateral ridge 110b is disposed to protrude upward from the bottom of the main body receiving groove 100b by a predetermined length. The upper end of the lateral ridge 110b is disposed to be lower than the upper surface of the substrate 10b. The distance from the upper end of the lateral ridge 110b to the upper surface of the substrate 10b along the vertical direction T is less than the first depth D3 of the main body receiving groove 100b. The lateral ridge 110b is disposed to be separated from the side surface of the main body receiving groove 100b along the length direction L. The lateral ridge 110b may have a predetermined length along the width direction W.

[0102] The first transverse partition L2a may have a first length along the length direction L. The second transverse partition L2b may have a second length along the length direction L. The first length may be a distance from one end of the body receiving groove 100b to the center of the transverse ridge 110b along the length direction L. The second length may be a distance from the other end of the body receiving groove 100b to the center of the transverse ridge 110b along the length direction L.

[0103] The first length may be set to 1 time or more of the first depth D3 of the body receiving groove 100b. The second length may be set to 1 time or more of the first depth D3 of the body receiving groove 100b.

[0104] The body 20b is disposed inside the body receiving groove 100b. The body 20b includes an inner electrode 210b (including a first inner electrode 211b and a second inner electrode 212b) and a dielectric layer 220b. The body 20b corresponds to the shape of the body receiving groove 100b, and the vertical dimension of the area disposed on the transverse ridge 110b is less than the first depth D3.

[0105] A lower insulating layer 201b may be disposed between the body receiving groove 100b and the body 20b.

[0106] The first external electrode 31b and the second external electrode 32b are disposed on the body 20b. The first external electrode 31b is connected to the first internal electrode 211b. The second external electrode 32b is connected to the first internal electrode 211b.

[0107] The insulating layer 40b may be disposed on the body 20b. In addition, the insulating layer 40b may be disposed on the substrate 10b. Since the capacitor 3 and the body 20b are provided with a reduced size in the vertical direction T except for the transverse ridge 110b disposed in the substrate 10b and thus forming a region along the length direction L where the size of the body receiving groove 100b in the vertical direction T and the size of the body 20b in the vertical direction T are reduced, Figures 1 to 3 The capacitor 1 is the same or similar, so repeated description will be omitted.

[0108] Fig.14 is a top plan view showing a cutting line for cutting in a method for manufacturing a capacitor according to another embodiment, and Fig.15 Show according to Fig.14 A vertical cross-sectional view of one end portion of the capacitor 4 manufactured by the manufacturing method along the width direction W.

[0109] Reference Fig.14 and Fig.15 , the substrate S1 may be cut along a first cutting line DIC1 in a width direction W and a second cutting line DIC2 in a length direction L. Therefore, the substrate S1 is separated along the first cutting line DIC1 and the second cutting line DIC2 , and each separated region becomes a substrate 10C of the capacitor 4 .

[0110] Before cutting, a body forming part BP is formed on the substrate S1. A first external electrode forming part IEa and a second external electrode forming part IEb are formed on the body forming part BP. A portion of the first external electrode forming part IEa may be formed on the substrate S1. A portion of the second external electrode forming part IEb may be formed on the substrate S1. After cutting is completed, the body forming part BP becomes the body 20c of the capacitor 4. After cutting is completed, the first external electrode forming part IEa becomes the first external electrode. After cutting is completed, the second external electrode forming part IEb becomes the second external electrode.

[0111] In the method for manufacturing the body forming part BP, the first external electrode forming part IEa and the second external electrode forming part IEb, the method described in reference to FIG. Figures 4 to 11 The same or similar parts of the methods are described, and only the differences are described.

[0112] The body receiving groove 100c is formed on the substrate S1. In this case, two body receiving grooves 100c adjacent to each other in the width direction W are formed to be connected to each other. Therefore, the bodies 20c formed in each body receiving groove 100c are connected to each other, thereby forming one body forming part BP.

[0113] Then, the body forming parts BP are separated from each other by cutting, thereby forming the body 20c respectively. Therefore, after the cutting is completed, the body receiving groove 100c has a structure in which one side surface along the width direction W is open along the side surface direction of the substrate 10c. In addition, one end of the first internal electrode 211c and one end of the second internal electrode 212c may be disposed on the side surface of the substrate 10c along the width direction W. That is, one side surface of the body 20c along the width direction W may be disposed on the side surface of the substrate 10c. Therefore, a side surface insulating layer 42 may be formed to prevent the internal electrode 210c located on the side surface of the capacitor 4 cut along the second cutting line DIC2 from being exposed to the outside. Therefore, the side surface insulating layer 42 is disposed on one side surface of the body 20c along the width direction W (disposed on the side surface of the substrate 10c). The side surface insulating layer 42 may be formed after the cutting process is performed. In addition, the insulating layer 40c may be disposed on the body 20c.

[0114] Since the structure of the capacitor 4 is similar to that of the main body receiving groove 100c except that one side of the main body receiving groove 100c along the width direction W is open toward the width direction W of the capacitor 4, Figure 1 The structure of capacitor 1 is the same or similar, so it will not be described again.

[0115] Fig.16 is a top plan view showing a cutting line for cutting in a capacitor manufacturing method according to another embodiment.

[0116] Reference Fig.16 , the substrate S2 may be cut along the first cutting line DIC1a in the width direction W and the second cutting line DIC2a in the length direction L. Therefore, the substrate S2 is separated along the first cutting line DIC1a and the second cutting line DIC2a, and each separated area becomes a capacitor 4.

[0117] Before cutting, a main body forming part BPa is formed on the substrate S2. A first external electrode forming part IEc, a cutting external electrode forming part IEd, and a second external electrode forming part IEe are formed on the main body forming part BPa. A portion of the first external electrode forming part IEc may be formed on the substrate S2. A portion of the cutting external electrode forming part IEd may be formed on the substrate S2. The cutting external electrode forming part IEd may be formed on two main body forming parts BPa adjacent to each other along the length direction L. Therefore, the first cutting line DIC1a is arranged across the cutting external electrode forming part IEd. A portion of the second external electrode forming part IEe may be formed on the substrate S2. After the cutting is completed, the main body forming part BPa becomes the main body 20c of the capacitor 4. After the cutting is completed, the first external electrode forming part IEc becomes the first external electrode. After the cutting is completed, the second external electrode forming part IEe becomes the second external electrode. The cutting external electrode forming part IEd is separated by cutting, so that one side becomes the first external electrode and the other side becomes the second external electrode.

[0118] In the method of manufacturing the body forming part BPa, the first external electrode forming part IEc, the cutting external electrode forming part IEd, and the second external electrode forming part IEe, the method of manufacturing the body forming part BPa, the first external electrode forming part IEc, the cutting external electrode forming part IEd, and the second external electrode forming part IEe are omitted. Figures 4 to 11 Describe the same or similar contents of the methods and describe the differences.

[0119] The body receiving groove 100c is formed on the substrate S2. In this case, two body receiving grooves 100c adjacent to each other in the width direction W are formed to be connected to each other. Therefore, the bodies 20c formed in each body receiving groove 100c are connected to each other, thereby forming one body forming portion BPa.

[0120] Then, the body forming parts BPa are separated from each other by cutting, and each body forming part BPa forms the body 20c. Therefore, after the cutting is completed, the body receiving groove 100c has a structure in which one side in the width direction W is open to the side surface of the capacitor 4 in the width direction W. In this case, the structure of the body 20c manufactured by cutting the body forming parts BPa is similar to that of the body 20c of reference numeral 100c. Fig.15 The structures described are the same or similar, so repeated descriptions will be omitted.

[0121] In addition, the cutting external electrode forming part IEd is formed on two main body forming parts BPa adjacent to each other in the length direction L. Therefore, the cutting external electrode forming part IEd in one main body forming part BPa is connected to the second internal electrode 212c, and the cutting external electrode forming part IEd in the other main body forming part BPa is connected to the first internal electrode 211c. Then, during the cutting process, the cutting external electrode forming part IEd is cut together with the substrate S2, so that one side becomes the second external electrode on one capacitor 4 and the other side becomes the first external electrode on the other capacitor 4. In addition, according to the cutting of the cutting external electrode forming part IEd, the cutting pattern generated in the cutting process may be located on at least one of the first external electrode and the second external electrode. In this case, the cutting pattern may be a pattern generated due to friction with the blade during the cutting process. In addition, the cutting pattern may be a crack pattern generated during the cutting process using a laser.

[0122] While the present disclosure has been described in connection with what are presently considered to be practical exemplary embodiments, it is to be understood that the present disclosure is not limited to the disclosed embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A capacitor, comprising: a substrate including a groove having a depth from an upper surface of the substrate; as well as a body including a first inner electrode and a second inner electrode stacked and a dielectric layer disposed between the first inner electrode and the second inner electrode, and the body is disposed on the groove, The width of the groove is 1 times or more than the depth of the groove, and the length of the groove is 1 times or more than the depth of the groove.

2. The capacitor according to claim 1, further comprising: A first external electrode is provided on an upper surface of one end portion of the main body along a length direction; as well as The second external electrode is arranged on the upper surface of the other end portion of the main body along the length direction.

3. The capacitor according to claim 2, wherein: The body further includes a first electrode separator disposed between the first outer electrode and the second inner electrode.

4. The capacitor according to claim 3, wherein: One end portion of the second internal electrode has a structure recessed into an inner side of the groove at the one end portion of the body in the length direction, and the first electrode separation layer is disposed in a space between two adjacent dielectric layers.

5. The capacitor according to claim 2 or 3, wherein: The body further includes a second electrode separator disposed between the second outer electrode and the first inner electrode.

6. The capacitor of claim 5, wherein: One end portion of the first internal electrode has a structure recessed into an inner side of the groove at the other end portion of the body in the length direction, and the second electrode separation layer is disposed in a space between two adjacent dielectric layers. 7 . The capacitor of claim 1 , further comprising a lower insulating layer disposed between the groove and the body.

8. The capacitor according to claim 1, further comprising: a first outer electrode connected to the first inner electrode on an upper surface of the body; a second outer electrode connected to the second inner electrode on the upper surface of the body; as well as An insulating layer is disposed on a portion of the upper surface of the body except for a portion where the first external electrode and the second external electrode are disposed.

9. The capacitor of claim 1, wherein: The groove has a structure in which one side in a width direction is open toward a side surface direction of the substrate, and the body is provided on the side surface of the substrate at one side in the width direction.

10. The capacitor of claim 1, wherein: The base plate includes a longitudinal ridge portion that protrudes upward from a bottom surface of the groove and is disposed to be spaced apart from both sides of the groove in a width direction.

11. The capacitor of claim 1 , wherein: The base plate includes a transverse ridge that protrudes upward from a bottom surface of the groove and is disposed to be spaced apart from both sides of the groove in a length direction.

12. The capacitor of claim 1, further comprising: a first outer electrode connected to the first inner electrode on an upper surface of the body; as well as a second outer electrode connected to the second inner electrode on the upper surface of the body, Wherein a boundary between the body and the substrate in a region below the first and second external electrodes is inclined with respect to the upper surface of the substrate.

13. The capacitor of claim 1, wherein: The width of the groove is 1 time or more and 44 times or less than the depth of the groove, and the length of the groove is 1 time or more and 54 times or less than the depth of the groove.

14. The capacitor of claim 1, wherein: The depth of the groove is 100 μm or less.

15. The capacitor of claim 1, wherein: The first internal electrode and the second internal electrode are disposed only in the groove.

16. A method for manufacturing a capacitor, comprising: forming a groove on the substrate, the groove being recessed from the upper surface of the substrate in a direction toward the lower surface of the substrate; forming an inner electrode layer and a dielectric layer on the upper surface of the substrate and on the groove; forming a body including the dielectric layer and an internal electrode formed by the internal electrode layer on the groove by removing portions of the internal electrode layer and the dielectric layer disposed outside the groove; and An external electrode connected to the internal electrode is formed on the body.

17. The method for manufacturing a capacitor according to claim 16, wherein: Removing the portions of the inner electrode layer and the dielectric layer is performed by a polishing process.

18. A capacitor, comprising: a substrate including a groove having a depth from an upper surface of the substrate; as well as a body including a first inner electrode and a second inner electrode stacked and a dielectric layer disposed between the first inner electrode and the second inner electrode, and the body is disposed on the groove, Wherein, the first internal electrode and the second internal electrode are only arranged in the groove.

19. The capacitor of claim 18, further comprising: a first external electrode disposed on an upper surface of one end portion of the body and the upper surface of the substrate to be connected to the first internal electrode; as well as A second external electrode is disposed on an upper surface of the other end portion of the body and the upper surface of the substrate to be connected to the second internal electrode.

20. The capacitor of claim 19, further comprising: a first electrode separator layer disposed between the first outer electrode and the second inner electrode; as well as A second electrode separator layer is disposed between the second outer electrode and the first inner electrode.

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