Medium-entropy alloy film for improving performance of silicon wafer and preparation method of medium-entropy alloy film

Abstract

The invention discloses a medium-entropy alloy film for improving the performance of a silicon wafer and a preparation method of the medium-entropy alloy film, the medium-entropy alloy film comprises an Al-Mn-Ru film deposited on the surface of the silicon wafer, and the preparation method of the medium-entropy alloy film for improving the performance of the silicon wafer comprises the following steps that (1) an AlMnRu coating is synthesized; and 2) the AlMnRu coating is deposited on the silicon wafer to obtain the medium-entropy alloy film for improving the performance of the silicon wafer, and the film can reduce the surface temperature of the silicon wafer and improve the conductivity of the silicon wafer.

Description

Technical Field

[0001] The invention belongs to the technical field of thin films and relates to a medium-entropy alloy thin film for improving the performance of a silicon wafer and a preparation method thereof. Background Art

[0002] Solar energy is the most abundant and cleanest renewable energy resource. The solar flux reaching the earth's surface is 3.00×10 24 Joules, which is more than 5,000 times the total global energy consumption. Therefore, a lot of research has been done to use semiconductors for the capture and utilization of solar energy. Photovoltaic (PV) systems convert solar energy into usable electricity and are currently the most popular means of utilizing solar energy. In 2019, the total installed capacity of solar photovoltaic panels worldwide reached 600GW, and it is expected that the global installed capacity of photovoltaics will reach 1,500GW by 2025 and 3,000GW by 2030.

[0003] Silicon is the most abundant semiconductor element in the earth's crust. It has the advantages of low cost, low band gap (about 1.1eV) and suitability for photoelectrochemical reactions, such as hydrogen evolution reaction, so it plays a vital role in the production of solar devices. Silicon is usually processed into thin wafers for application. For example, polycrystalline silicon manufactures about 95% of solar cells in the world. In addition, it is also widely used in photoelectrodes in solar chemistry (such as photoelectrochemical reactions of hydrogen and hydrocarbons). However, silicon-based solar devices generate a lot of heat under sunlight. Due to the low efficiency of photovoltaic conversion, most of the solar energy (about 75-96%) is converted into thermal energy rather than effectively converted into electrical energy or chemical energy. This heat makes the temperature of the solar panel about 40°C higher than the ambient temperature, resulting in a decrease in the energy efficiency of photovoltaics. Specifically, for every 1°C increase in temperature, the efficiency loss is about 0.45%; at the same time, for every 10°C increase in temperature, the aging rate of the battery will double. Therefore, the work of cooling the silicon surface is an important step towards the sustainability of photovoltaics.

[0004] In order to solve this problem, the design and development of new technologies and materials have become the key to improving photovoltaic efficiency. Cooling the silicon surface and reducing the energy loss caused by thermal effects not only help to improve photovoltaic conversion efficiency, but also effectively extend the service life of the battery. Therefore, the development of efficient materials and structures that suppress the increase in surface temperature is an important step in promoting the development of sustainable solar energy technology, but the existing technology does not provide similar technical inspiration. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a medium-entropy alloy film for improving the performance of silicon wafers and a preparation method thereof, wherein the film can reduce the surface temperature of the silicon wafer and improve the conductivity of the silicon wafer.

[0006] To achieve the above object, the present invention discloses a medium-entropy alloy film for improving the performance of a silicon wafer, comprising an Al-Mn-Ru film deposited on the surface of the silicon wafer.

[0007] The present invention discloses a method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer, comprising the following steps:

[0008] 1) Synthesize AlMnRu coating;

[0009] 2) Depositing an AlMnRu coating on a silicon wafer to obtain a medium-entropy alloy film for improving the performance of the silicon wafer.

[0010] The further improvement of the method for preparing the medium entropy alloy film for improving the performance of silicon wafers according to the present invention is:

[0011] Further, the specific process of step 1) is:

[0012] AlMnRu coating was synthesized by single magnetron co-sputtering process with Al-manganese alloy and ruthenium as sputtering targets.

[0013] Furthermore, in step 2), the AlMnRu coating is deposited on the silicon wafer using a physical vapor deposition process.

[0014] Furthermore, in step 2), during the deposition process, the deposition is carried out under an argon pressure of 0.5 Pa, a deposition rate of 0.14 nm / s, and a substrate temperature of 100° C. to obtain a medium-entropy alloy film.

[0015] Furthermore, in step 2), during the deposition process, the sputtering power of all targets is 10 to 200 W.

[0016] Furthermore, in step 2), during the deposition process, the total duration is 1 to 180 minutes.

[0017] Furthermore, the Al:Mn:Ru elements in the medium-entropy alloy film are 60:10:30.

[0018] Furthermore, the Al:Mn:Ru elements in the medium-entropy alloy film are 40:5:55.

[0019] Furthermore, the Al:Mn:Ru elements in the medium-entropy alloy film are 8:7:85.

[0020] The present invention has the following beneficial effects:

[0021] The medium-entropy alloy film for improving the performance of silicon wafers and the preparation method thereof described in the present invention, during specific operation, include an Al-Mn-Ru film deposited on the surface of the silicon wafer. The Al-Mn-Ru film can not only significantly reduce the surface temperature of the silicon wafer, but also improve the electrical conductivity of the silicon wafer and effectively reduce the Schottky barrier. The medium-entropy alloy film to improve the silicon substrate is expected to become an important solution in the application of solar energy technology, and promote the solar energy industry to develop in a more efficient and sustainable direction.

[0022] Furthermore, the single magnetron co-sputtering process can uniformly deposit a thin film with excellent performance on the silicon surface by using multiple targets for sputtering in a high vacuum environment. Its advantages are: the thickness and composition of the film can be accurately controlled, thereby optimizing the electrical and thermal properties of the material. PVD technology deposits thin films on the silicon surface by evaporating or sputtering the target material and utilizing gas phase reactions. It has excellent film adhesion and high deposition efficiency. The combination of the two makes the prepared Al-Mn-Ru film have good stability and high-quality performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0024] Figure 1 Infrared photos and corresponding surface temperature diagrams of different samples in the present invention when the time intervals of simulating 1 sun irradiation are 0s, 10s, 60s, 120s, and 300s, where a represents Si, b represents Si / AlMnRu-1, c represents Si / AlMnRu-2, and d represents Si / AlMnRu-3;

[0025] Figure 2a This is the transmission electron microscope image of Si / AlMnRu-3;

[0026] Figure 2b This is the element spectrum of AlMnRu-3;

[0027] Figure 2c is the current-time curve of the sample;

[0028] Figure 3 is the X-ray diffraction pattern of the sample in the present invention;

[0029] Figure 4 The SEM image and element spectrum of Si / AlMnRu-3 in the present invention;

[0030] Figure 5 This is a scanning electron microscope image of the cross section of the AlMnRu film of Si / AlMnRu-3 in the present invention. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] In the description of the present invention, it should be understood that the terms “include” and “comprises” indicate the presence of described features, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or collections thereof.

[0033] It should also be understood that the terms used in the present specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0034] It should be further understood that the term "and / or" used in the present specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes these combinations. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in the present invention generally indicates that the associated objects are in an "or" relationship.

[0035] It should be understood that, although the terms first, second, third, etc. may be used to describe preset ranges, etc. in the embodiments of the present invention, these preset ranges should not be limited to these terms. These terms are only used to distinguish preset ranges from each other. For example, without departing from the scope of the embodiments of the present invention, the first preset range may also be referred to as the second preset range, and similarly, the second preset range may also be referred to as the first preset range.

[0036] The word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0037] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0038] Various structural schematic diagrams of the embodiments disclosed in the present invention are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may additionally design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0039] As is known, the single magnetron co-sputtering process is a physical vapor deposition (PVD) technology that uses the combined action of magnetic field and electric field to sputter out atoms or molecules on the surface of the target material and form a thin film on the surface of the substrate. The following is a detailed analysis of the single magnetron co-sputtering process: The basic principle is: In the single magnetron co-sputtering process, the target material is placed in a vacuum chamber filled with an inert gas (such as argon). When a negative high voltage is applied between the target material and the substrate, the argon gas is ionized to form a plasma, and the charged particles in these plasmas (mainly argon ions) are accelerated under the action of the electric field and bombard the surface of the target material. After obtaining sufficient energy, the atoms or molecules on the surface of the target material will be sputtered out from the surface of the target material, and under the combined action of the electric field and the magnetic field, they will accelerate along the direction between the target material and the substrate, and finally deposit on the surface of the substrate to form a thin film.

[0040] The Physical Vapor Deposition (PVD) process is an advanced thin film preparation technology that converts solid materials into gaseous state by physical methods and deposits them on the surface of the substrate to form a thin film. The following is a detailed description of the physical vapor deposition process: The basic principles of the physical vapor deposition process can be divided into three main steps: Vaporization of the plating material: The plating material (solid material) is evaporated, sublimated or sputtered by heating, sputtering or electric arc, thereby converting it into gaseous atoms or molecules. Migration of plating material atoms, molecules or ions: In a vacuum environment, gaseous atoms, molecules or ions collide and transfer to the surface of the substrate. Deposition of plating material atoms, molecules or ions on the substrate: On the surface of the substrate, gaseous atoms, molecules or ions are adsorbed, nucleated, and eventually grow into a thin film.

[0041] The medium-entropy alloy film for improving the performance of silicon wafers of the present invention includes an Al-Mn-Ru film disposed on the surface of the silicon wafer, and the Al-Mn-Ru film can suppress the temperature of the surface of the silicon wafer and improve the electrical conductivity of the silicon wafer. Specifically, the Al-Mn-Ru film can effectively suppress the increase of the surface temperature of the silicon wafer by about 1°C to 10°C, thereby significantly suppressing heat accumulation and suppressing the increase of the surface temperature of the device, which helps to improve the photoelectric conversion efficiency of the device by about 0.5% to 4.5%, thereby significantly reducing potential energy losses. In addition, coating the medium-entropy alloy film can further improve the electrical conductivity of the silicon wafer, with a maximum increase of about 2 orders of magnitude.

[0042] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0043] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0044] 2) The AlMnRu coating is deposited on a silicon wafer by a physical vapor deposition process, wherein the deposition process is carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets is 10 to 200 W, the deposition rate is 0.14 nm / s, the total duration is 1 to 180 min, and the temperature of the substrate is 100°C to obtain a medium-entropy alloy film.

[0045] It should be noted that the present invention adopts advanced single magnetron co-sputtering process and physical vapor deposition (PVD) technology to prepare a new type of Al-Mn-Ru film, which can not only significantly reduce the surface temperature of silicon wafers, but also improve its electrical conductivity and effectively reduce the Schottky barrier. The single magnetron co-sputtering process can uniformly deposit a film with excellent performance on the silicon surface by sputtering using multiple targets in a high vacuum environment. The advantage of this process is that it can accurately control the thickness and composition of the film, thereby optimizing the electrical and thermal properties of the material. PVD technology deposits a film on the silicon surface by evaporating or sputtering the target material and utilizing a gas phase reaction, which has excellent film adhesion and high deposition efficiency. The combination of the two makes the prepared Al-Mn-Ru film have good stability and high quality performance.

[0046] Research shows that coating Al-Mn-Ru thin film on silicon wafer can effectively improve the conductivity. The reason is that Al-Mn-Ru thin film can significantly reduce the Schottky barrier and improve the transmission efficiency of electrons, making the film not only suitable for suppressing the increase of surface temperature in photovoltaic devices, but also providing a feasible solution for improving the efficiency of silicon-based solar devices, such as polycrystalline silicon solar cells and silicon-based photoelectrochemical cells. At the same time, Al-Mn-Ru alloy can effectively reduce the heat accumulation caused by solar energy absorption, thereby preventing the battery from overheating and improving the long-term stability and durability of photovoltaic cells.

[0047] In addition, it should be noted that the application of medium-entropy alloy films (such as Al-Mn-Ru) in the field of materials science is of great significance. It not only provides feasibility for the development of more efficient and durable silicon-based solar equipment, but also provides new technical options for the transmission, storage and use of solar energy. By optimizing the conductivity and cooling properties of silicon-based materials, the comprehensive performance of solar cells can be greatly improved. Especially in the future, with the growing global demand for green energy, medium-entropy alloy films to improve silicon substrates are expected to become an important solution in the application of solar energy technology, driving the solar industry towards a more efficient and sustainable direction.

[0048] Embodiment 1

[0049] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0050] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0051] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process. During the deposition process, the process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 80 W, the deposition rate was 0.14 nm / s, the total duration was 60 min, and the temperature of the substrate was 100 °C to obtain a medium-entropy alloy film (Si / AlMnRu-1), in which the Al:Mn:Ru elements were 60:10:30.

[0052] Embodiment 2

[0053] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0054] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0055] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process. During the deposition process, the process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 80 W, the deposition rate was 0.14 nm / s, the total duration was 100 min, and the substrate temperature was 100 ° C to obtain a medium-entropy alloy film (Si / AlMnRu-2), in which the Al:Mn:Ru elements in Si / AlMnRu-2 were 40:5:55.

[0056] Embodiment 3

[0057] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0058] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0059] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process. During the deposition process, the process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 100 W, the deposition rate was 0.14 nm / s, the total duration was 150 min, and the substrate temperature was 100 ° C to obtain a medium-entropy alloy film (Si / AlMnRu-3), in which the Al:Mn:Ru elements were 8:7:85.

[0060] Figure 1 Si, Si / AlMnRu-1(Si / AlMnRu 0.30 )、Si / AlMnRu-2(Si / AlMnRu 0.55 ) and Si / AlMnRu-3(Si / AlMnRu 0.85) Thermal images of the samples with irradiation time from 0 to 300 s under simulated sunlight source. Meanwhile, the details of sample preparation and characterization are in the supporting information, namely the X-ray diffraction patterns of the samples, with obvious temperature rises of 11.3 °C, 7.9 °C, and 1.7 °C, corresponding to Si / AlMnRu-1, Si / AlMnRu-2, and Si / AlMnRu-3, respectively.

[0061] like Figure 2a and 2b As shown, Si / AlMnRu-1, Si / AlMnRu-2 and Si / AlMnRu-3 were observed by transmission electron microscopy, and the corresponding Al:Mn:Ru element ratios were 60:10:30, 40:5:55 and 8:7:85 samples, respectively. Figure 4 It can be seen that the thickness of the AlMnRu layer of Si / AlMnRu-3 measured by scanning electron microscopy is about 787.86nm.

[0062] like Figure 2c As shown, the conductivity of the sample was measured by the two-electrode method, and an AC voltage of 1V was applied to the sample at a time interval of 5 seconds. The results show that the current of the original silicon wafer is 0.001A, Si / AlMnRu-1 is 0.024A, Si / AlMnRu-2 is 0.086A, and Si / AlMnRu-3 is 0.187~0.193A. The current of Si / AlMnRu-3 is two orders of magnitude higher than that of the original silicon wafer. This result shows that coating Al-Mn-Ru film improves conductivity, which in turn is beneficial to solar devices.

[0063] Embodiment 4

[0064] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0065] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0066] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process, wherein the deposition process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 10 W, the deposition rate was 0.14 nm / s, the total duration was 1 min, and the substrate temperature was 100°C to obtain a medium-entropy alloy film.

[0067] Embodiment 5

[0068] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0069] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0070] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process, wherein the deposition process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 200 W, the deposition rate was 0.14 nm / s, the total duration was 180 min, and the substrate temperature was 100°C to obtain a medium-entropy alloy film.

[0071] Embodiment 6

[0072] The method for preparing a medium-entropy alloy film for improving the performance of a silicon wafer according to the present invention comprises the following steps:

[0073] 1) Using aluminum manganese (AlMn) alloy and ruthenium (Ru) as sputtering targets, AlMnRu coating was synthesized by single magnetron co-sputtering process;

[0074] 2) The AlMnRu coating was deposited on a silicon wafer by a physical vapor deposition process, wherein the deposition process was carried out under an argon pressure of 0.5 Pa, the sputtering power of all targets was 50 W, the deposition rate was 0.14 nm / s, the total duration was 100 min, and the substrate temperature was 100°C to obtain a medium-entropy alloy film.

[0075] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and disclosure of the invention. This application is intended to cover any variations, uses or adaptations of the present invention that follow the general principles of the present invention and include common knowledge or customary techniques in the art that are not disclosed by the present invention. The specification and examples are to be considered exemplary only, and the true scope and spirit of the present invention are indicated by the following claims.

[0076] It should be understood that the present invention is not limited to the exact construction that has been described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

[0077] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any simple modification, change and equivalent structural change made to the above embodiment based on the technical essence of the present invention still falls within the protection scope of the technical solution of the present invention.

Claims

1. A medium entropy alloy film for improving the performance of silicon wafers, characterized in that: The method comprises an Al-Mn-Ru film deposited on the surface of the silicon wafer.

2. A method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer as claimed in claim 1, characterized in that: The following steps are involved: 1) Synthesize AlMnRu coating; 2) Depositing an AlMnRu coating on a silicon wafer to obtain a medium-entropy alloy film for improving the performance of the silicon wafer.

3. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 2, characterized in that: The specific process of step 1) is: AlMnRu coating was synthesized by single magnetron co-sputtering process with Al-manganese alloy and ruthenium as sputtering targets.

4. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 2, characterized in that: In step 2), an AlMnRu coating is deposited on a silicon wafer using a physical vapor deposition process.

5. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 4, characterized in that: In step 2), during the deposition process, the deposition is carried out under an argon pressure of 0.5 Pa, a deposition rate of 0.14 nm / s, and a substrate temperature of 100° C. to obtain a medium-entropy alloy film.

6. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 5, characterized in that: In step 2), during the deposition process, the sputtering power of all targets is 10-200W.

7. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 5, characterized in that: In step 2), during the deposition process, the total duration is 1 to 180 minutes.

8. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 2, characterized in that: The Al:Mn:Ru elements in the medium-entropy alloy film are 60:10:

30.

9. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 2, characterized in that: The Al:Mn:Ru elements in the medium-entropy alloy film are 40:5:

55.

10. The method for preparing a medium-entropy alloy thin film for improving the performance of a silicon wafer according to claim 2, characterized in that: The Al:Mn:Ru elements in the medium-entropy alloy film are 8:7:85.

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