Process Chamber and Semiconductor Equipment

Abstract

Embodiments of the present application provide a process chamber and a semiconductor device. The semiconductor device includes a process chamber, and the process chamber includes a cavity, an air pump, and a pressure control valve. A first through hole is provided at the center of the bottom of the cavity. The air pump is arranged outside the cavity and is communicated with the first through hole. The pressure control valve includes a valve plate and at least one driving component. The valve plate is arranged inside the cavity and faces the first through hole. At least one driving component passes through the cavity and is connected to the valve plate. Driven by at least one driving component, the valve plate can move along the vertical direction of the cavity to move away from or close to the first through hole. By arranging flow field adjustment components such as an air pump and a pressure control valve in the process chamber, the embodiments of the present application enable the process chamber to have good flow field symmetry and improve the etching non-uniformity of the semiconductor device for wafers.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment, and particularly to a process chamber and a semiconductor equipment. Background Art

[0002] In the fields of precision manufacturing such as semiconductors and photovoltaics, the dynamic pressure control of the process chamber is the core factor affecting plasma uniformity and process stability. The prior art generally uses an eccentrically moving swing valve to achieve pressure regulation, and changes the cross-sectional area of the gas flow channel by the swing angle of the valve plate. However, the lateral deflection movement of the eccentric swing valve will form an asymmetric eddy current at the bottom of the chamber, resulting in uneven plasma distribution and thus affecting the uniformity of etching. Summary of the Invention

[0003] Embodiments of this application provide a process chamber and a semiconductor equipment. By setting flow field adjustment components such as a gas pump and a pressure control valve in the process equipment, the process chamber has good flow field symmetry, and improves the non-uniformity of wafer etching of the semiconductor equipment including the process chamber.

[0004] In a first aspect, embodiments of this application propose a process chamber, which includes a cavity, a gas pump and a pressure control valve; a first through hole is provided at the center of the bottom of the cavity; the gas pump is arranged outside the cavity and communicated with the first through hole; the pressure control valve includes a valve plate and at least one driving component. The valve plate is arranged inside the cavity and faces the first through hole. These driving components pass through the cavity and are connected to the valve plate. Driven by the driving components, the valve plate can move in the vertical direction of the cavity to move away from or close to the first through hole.

[0005] In embodiments of this application, by providing a first through hole at the center of the bottom of the cavity, the gas pump is communicated with the first through hole and the valve plate faces the first through hole, that is, the center line of the valve plate can coincide or basically coincide with the center line of the cavity. When the gas pump extracts the process gas in the cavity, the process gas can flow symmetrically from both sides of the cavity to the center of the bottom wall, and a relatively symmetric flow field can be formed in the cavity, improving the uniformity of plasma distribution and the uniformity of etching.

[0006] In an implementation manner of the first aspect, at least one second through hole is provided on the cavity, at least one driving component is one, at least one second through hole is one, and the driving component passes through the second through hole and is connected to the valve plate. The driving component is used to drive the valve plate to move away from or close to the first through hole. When the number of the driving component and the second through hole are both one, while driving the valve plate to move away from or close to the first through hole, the structure of the driving component and the cavity is simplified, the cost is reduced, and the potential failure points of the process chamber are reduced.

[0007] Alternatively, at least one driving component includes a plurality of driving components. Each driving component is correspondingly provided with a second through hole on the cavity. There are a plurality of at least one second through holes, and the positions of the respective second through holes correspond to those of the respective driving components. The respective driving components are arranged side by side at intervals. Each driving component passes through each second through hole and is connected to the valve plate. Each driving component is used to drive the valve plate away from or close to the first through hole. When the number of driving components and second through holes is both a plurality, the multiple driving components act together on the valve plate, which not only improves the smoothness of the valve plate movement but also increases the flexibility of controlling the valve plate. Even if a certain driving component fails, other driving components can still continue to work, ensuring the reliability and continuity of the system.

[0008] Alternatively, at least one driving component includes a plurality of driving components. At least one driving component includes a first driving component and a plurality of second driving components. The plurality of second driving components are arranged side by side at intervals. The first driving component is connected to the plurality of second driving components. The first driving component or / and the plurality of second driving components pass through the cavity wall of the cavity and are connected to the valve plate. The first driving component is used to drive the plurality of second driving components to move, and the plurality of second driving components are used to drive the valve plate away from or close to the first through hole. When the driving component includes a first driving component and at least one second driving component, and the number of second through holes is a plurality, the first driving component serves as the main driving source and is responsible for driving the second driving components to move, while the second driving components are directly connected to and drive the valve plate. The design of hierarchical driving of the first driving component and the second driving components makes the transmission of driving force more efficient, reduces energy loss, and improves the response speed and driving efficiency of the entire driving system. The above are all beneficial to forming a relatively symmetrical gas flow field in the cavity, thereby ensuring the circumferential etching uniformity of the wafer in the process chamber.

[0009] In an implementation manner of the first aspect, an annular seal is provided on the side of the valve plate facing the first through hole. The annular seal forms a matching contact surface with the edge of the first through hole. The annular seal can form a sealing fit with the edge of the first through hole to block the first through hole. When the valve plate moves in the vertical direction and completely covers the first through hole, the annular seal is compressed and deformed to seal the cavity, so as to ensure the airtightness of the cavity, which is beneficial to forming a relatively symmetrical gas flow field in the cavity, thereby ensuring the circumferential etching uniformity of the wafer in the process chamber.

[0010] In an implementation of the first aspect, the process chamber further includes a lower electrode, a feeding device, and a return disk. The feeding device passes through the sidewall of the cavity and is connected to the lower electrode for feeding power to the lower electrode. The return disk is located below the lower electrode and is used to provide a return path for the radio frequency signal. At least one third through-hole is provided on the return disk, and these third through-holes are located in the semi-circular disk area of the return disk close to the feeding device. Since the radio frequency is fed into the cavity from the side of the process chamber, the current density on the feeding side in the process chamber is relatively large, and the radio frequency current distribution in the cavity is uneven. By providing the third through-holes in the semi-circular disk area of the return disk close to the feeding side, the radio frequency current on the return disk can be made not to flow through the area where the third through-holes are located, thereby changing the radio frequency distribution on the return disk, and further compensating for the asymmetry of the radio frequency intrinsic caused by the side feeding of the radio frequency current, improving the radio frequency return symmetry of the cavity, and being beneficial to improving the etching effect of the process chamber on the circumferential direction of the wafer.

[0011] In an implementation of the first aspect, the return disk includes a main body and a base. Both the main body and the base are rotating bodies, the axis of the main body coincides with the axis of the base, and the projection of the base along the axis falls within the boundary of the main body. By providing the main body and the base in the return disk of the return device, the transmission characteristics of the radio frequency return can be matched, so that the radio frequency return can converge from the periphery of the main body to the center of the main body and continue to be transmitted along the base (this can be called the "necking" of the radio frequency return), which is beneficial to improving the symmetry of the radio frequency return.

[0012] In an implementation of the first aspect, the shape of the third through-hole is one or more of an annular shape, a circular shape, and a strip shape. The third through-hole with a regular shape can optimize the transmission path of the radio frequency signal, thereby offsetting the non-uniformity in the process of radio frequency signal transmission to a certain extent, further improving the symmetry of the radio frequency return in the process chamber, and being beneficial to improving the etching effect of the process chamber on the circumferential direction of the wafer.

[0013] In an implementation of the first aspect, the main body is provided with a plurality of third through-holes, and the plurality of third through-holes are respectively distributed on different radial lines of the main body. This can compensate for the asymmetry of the radio frequency intrinsic caused by the side feeding of the radio frequency current, improve the radio frequency return symmetry of the cavity, and be beneficial to improving the etching effect of the process equipment. In addition, the maintainability of the lower electrode cables and water pipes can also be improved.

[0014] In an implementation of the first aspect, an opening for the substrate to enter and exit is provided on the cavity, and a groove is provided on the inner wall of the cavity opposite to the opening. By providing the groove opposite to the opening on the inner wall of the cavity, the vacuum volume of the area corresponding to the inner wall provided with the groove is increased to balance the gas flow rate on both sides of the cavity, so as to compensate for the flow field asymmetry caused by the opening, which is beneficial to forming a symmetric flow field in the cavity and improving the etching effect of the process chamber on the circumferential direction of the wafer.

[0015] In an embodiment of the first aspect, the shape of the groove is at least one of a goggle shape, a rectangle, and a trapezoid, so as to adapt to the structural layout in the process chamber, so that the groove can compensate for the flow field asymmetry caused by the opening while ensuring a reasonable spatial layout of the process chamber.

[0016] In an embodiment of the first aspect, the process chamber further includes a conductive lining, which is located in the process chamber and is used to enclose a process area with the lower electrode; the conductive lining is provided with a plurality of through-hole groups, and each through-hole group includes at least one fourth through-hole, and the plurality of through-hole groups are evenly distributed around the center line of the conductive lining. The through-hole groups can be used for process gas to pass through. By arranging a plurality of symmetrically distributed through-hole groups at the bottom of the conductive lining, a sufficiently high gas conductance can be formed when the air pump evacuates the cavity, which is beneficial to the etching process.

[0017] In an embodiment of the first aspect, each through-hole group includes a plurality of fourth through-holes distributed on the same diameter line of the conductive lining; along the direction from the outside of the conductive lining to the inside of the conductive lining, the through-hole area of the fourth through-holes in each through-hole group shows a decreasing trend. An air extraction port can be provided at the bottom of the conductive lining. The plasma in the process area is more likely to escape as it gets closer to the air extraction port. By making the width of the through-hole group closer to the air extraction port smaller, the conductive lining can effectively confine the plasma and reduce the amount of plasma leaking from the through-hole group. By making the width of the through-hole group farther from the air extraction port larger, the bottom of the conductive lining can have a sufficiently large exhaust area to form a sufficiently high gas conductance when the air pump evacuates the cavity, which is beneficial to the etching process; since the plasma farther from the air extraction port is not easily escaped, increasing the width of the through-hole group farther from the air extraction port will not cause too much plasma to leak from the through-hole group, which is beneficial to forming a relatively symmetric gas flow field in the cavity, thereby ensuring the circumferential etching uniformity of the process chamber for the crystal ring.

[0018] In an embodiment of the first aspect, each through-hole group includes a plurality of subgroups, and each subgroup includes a plurality of fourth through-holes distributed on the same diameter line of the conductive lining, and the plurality of subgroups are respectively distributed on different diameter lines of the conductive lining. The partial conductive lining area between the plurality of fourth through-holes on the same diameter line can reduce the amount of plasma leaking from the through-hole group, that is, the plurality of spaced fourth through-holes can effectively confine the plasma while ensuring the exhaust area. The plurality of subgroups respectively distributed on different diameter lines can cover a larger area of the conductive lining, which is beneficial to ensuring the circumferential exhaust uniformity of the process area, while taking into account restricting the plasma leakage amount in the entire process area, thereby improving the circumferential etching non-uniformity of the process chamber for the crystal ring.

[0019] In an embodiment of the first aspect, each through-hole group includes a plurality of fourth through-holes respectively distributed on different radial lines of the conductive inner lining; along the direction from the outside to the inside of the conductive inner lining, the caliber of each fourth through-hole shows a decreasing trend. This can ensure that the conductive inner lining effectively confines the plasma while forming a sufficiently large exhaust area at the bottom of the conductive inner lining to form a sufficiently high gas conductance when the air pump evacuates the cavity, which is conducive to forming a relatively symmetric gas flow field in the cavity, thereby ensuring the circumferential etching uniformity of the wafer in the process chamber.

[0020] In an embodiment of the first aspect, the conductive inner lining is fixed relative to the process chamber, and the lower electrode and the reflux disk of the reflux device are used to move relative to the process chamber. By providing a conductive inner lining without a wafer transfer opening in the process chamber, the RF reflux symmetry of the process area, that is, the discharge area, can be ensured, which is conducive to improving the etching uniformity of the process equipment.

[0021] In a second aspect, an embodiment of the present application provides a semiconductor device including any one of the above process chambers. Since the process chamber has good flow field symmetry, the etching non-uniformity of the semiconductor device for the wafer is improved, which is conducive to obtaining good etching process effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic structural diagram of the semiconductor device according to an embodiment of the present application;

[0023] Figure 2 is a schematic structural diagram of the process chamber according to an embodiment of the present application;

[0024] Figure 3 is a schematic diagram of the cooperation structure between the flow field adjustment component and the bottom wall according to an embodiment of the present application;

[0025] Figure 4 is a schematic structural diagram of a pressure control valve provided by an embodiment of the present application;

[0026] Figure 5 is a schematic structural diagram of another pressure control valve provided by an embodiment of the present application;

[0027] Figure 6 is a schematic structural diagram of another pressure control valve provided by an embodiment of the present application;

[0028] Figure 7 is a schematic structural diagram of a first side wall provided by an embodiment of the present application;

[0029] Figure 8 is a schematic structural diagram of another first side wall provided by an embodiment of the present application;

[0030] Figure 9It is a schematic structural diagram of another first sidewall provided by an embodiment of the present application;

[0031] Figure 10 It is a schematic structural diagram of a conductive inner lining provided by an embodiment of the present application;

[0032] Figure 11 It is a top view of a conductive inner lining provided by an embodiment of the present application;

[0033] Figure 12 It is a top view of another conductive inner lining provided by an embodiment of the present application;

[0034] Figure 13 It is a top view of another conductive inner lining provided by an embodiment of the present application;

[0035] Figure 14 It is a top view of another conductive inner lining provided by an embodiment of the present application;

[0036] Figure 15 It is a schematic structural diagram of a reflux tray provided by an embodiment of the present application;

[0037] Figure 16 It is a schematic structural diagram of another reflux tray provided by an embodiment of the present application;

[0038] Figure 17 It is a schematic structural diagram of another reflux tray provided by an embodiment of the present application.

[0039] Explanation of reference numerals:

[0040] 1000 - semiconductor device;

[0041] 100 - process chamber;

[0042] 1 - cavity; 10 - chamber wall; 12 - sidewall; 121 - first sidewall; 122 - second sidewall; 123 - opening; 124 - motor; 125 - groove; 13 - bottom wall; 131 - first through - hole; 132 - second through - hole; 14 - accommodation cavity; 15 - conductive inner lining; 151 - air extraction port; 152 - through - hole group; 1521 - first end; 1522 - second end; 1523 - fourth through - hole; 1524 - subgroup; 16 - upper housing; 17 - process area; 2 - feeding device; 21 - feeding power source; 22 - matcher; 23 - RF feeding member; 24 - grounding part; 3 - flow field regulating component; 31 - air pump; 32 - pressure control valve; 321 - driving component; 3211 - first driving component; 3212 - second driving component; 322 - valve plate; 3221 - annular seal; 4 - reflux tray; 41 - main body; 42 - base; 43 - third through - hole; 44 - fifth through - hole; 5 - lower electrode; 51 - base; 511 - first surface; 512 - second surface; 513 - electrode structure;

[0043] 200 - Gas source. Detailed implementation manners

[0044] There are various types of semiconductor devices. Semiconductor devices used for etching processes, such as reactive ion etching machines (Reactive Ion Etching, RIE) and inductively coupled plasma etching machines (Inductively Coupled Plasma, ICP), etc., are one of the key devices in precision manufacturing fields such as semiconductors and photovoltaics. This semiconductor device needs to be connected to an external gas source to receive process gases. After the process gases are introduced into the semiconductor device, they will be ionized to generate plasma, and the plasma can bombard the objects to be processed in the reaction chamber, such as wafers, to selectively remove materials on the wafers and form the required circuit structures.

[0045] The dynamic pressure control of the process chamber of the above semiconductor device is the core factor affecting plasma uniformity and process stability. The prior art generally uses an eccentrically moving swing valve to achieve pressure regulation, and changes the cross-sectional area of the gas flow channel by the swing angle of the valve plate. However, the lateral deflection movement of the eccentric swing valve will form an asymmetric eddy current at the bottom of the chamber, resulting in uneven plasma distribution in the reaction chamber, thus affecting the etching uniformity.

[0046] This application provides a semiconductor device. The semiconductor device may include a process chamber. By setting a flow field adjustment component in the process chamber, the process chamber has good flow field symmetry, improving the uniformity of plasma distribution and the etching uniformity. The possible implementation manners of this application will be described below with reference to the accompanying drawings.

[0047] Figure 1 is a schematic structural diagram of the semiconductor device 1000 according to an embodiment of this application. Refer to Figure 1 , the semiconductor device 1000 may include a process chamber 100, a gas source 200, etc. The gas source 200 may be connected to the accommodation chamber 14 (or reaction chamber) of the process chamber 100. The gas source 200 can supply process gases to the accommodation chamber 14. The structure and connection position of the gas source 200 in the embodiment of this application are not limited, Figure 1 The illustration shown is only a schematic.

[0048] Figure 2 is a schematic structural diagram of the process chamber 100 according to an embodiment of this application. Refer to Figure 2 , the process chamber 100 may include a cavity 1, a feeding device 2, a flow field adjustment component 3, a reflux plate 4, a lower electrode 5, etc. The feeding device 2 may be arranged outside the cavity 1, the lower electrode 5 and the reflux plate 4 may be arranged inside the cavity 1, and a part of the flow field adjustment component 3 may be located inside the cavity 1, and another part may be exposed outside the cavity 1.

[0049] As shown Figure 2 in FIG. 1, the lower electrode 5 may include a base 51 and an electrode structure 513. The base 51 may include opposite first and second surfaces 511 and 512. The first surface 511 may be used to carry a wafer, and at least a part of the electrode structure 513 may be disposed around the second surface 512. The electrode structure 513 may include a ground loop, and the ground loop may be electrically connected to a feeding device 2 outside the cavity 1.

[0050] As shown Figure 2 in FIG. 2, the cavity wall 10 of the cavity 1 may include a side wall 12 and a bottom wall 13. The side wall 12 and the bottom wall 13 may cooperate to enclose a receiving cavity 14. The receiving cavity 14 may be used to receive process gas after reaching a certain vacuum degree. Schematically, the receiving cavity 14 may be a symmetric structure, such as a centrally symmetric cylindrical shape, and its center line may be defined. The base 51 and the electrode structure 513 may be entirely located within the receiving cavity 14.

[0051] Figure 3 FIG. 3 is a schematic diagram of the cooperation structure between the flow field regulating component 3 and the bottom wall 13 according to an embodiment of the present application. Combining Figure 2 with Figure 3 FIG. 4, a part of the flow field regulating component 3 may be located outside the receiving cavity 14, and another part of the flow field regulating component 3 may be located inside the receiving cavity 14. The flow field regulating component 3 may communicate with the receiving cavity 14. The flow field regulating component 3 may be used to regulate the gas distribution in the receiving cavity 14, that is, to regulate the flow field in the receiving cavity 14. Schematically, the flow field regulating component 3 may form a flow field in the receiving cavity 14 by extracting process gas in the receiving cavity 14. The flow field regulating component 3 may be generally disposed at the center of the bottom wall 13, and the flow field regulating component 3 may be symmetric about the center line of the receiving cavity 14, that is, the flow field regulating component 3 may be centered relative to the receiving cavity 14. By disposing the flow field regulating component 3 at the center of the bottom wall 13 and making the flow field regulating component 3 symmetric about the center line of the receiving cavity 14, when the flow field regulating component 3 extracts process gas in the receiving cavity 14, the process gas may symmetrically flow from both sides of the receiving cavity 14 to the center of the bottom wall 13, and a relatively symmetric flow field may be formed in the receiving cavity 14, improving the uniformity of the plasma distribution and being beneficial to the etching uniformity of the process chamber 100.

[0052] Combining Figure 2 with Figure 3As shown, exemplarily, the flow field regulating assembly 3 may include an air pump 31 and a pressure control valve 32. The air pump 31 may be located outside the accommodation cavity 14. The air pump 31 may be disposed on the center line of the cavity 1, that is, the center line of the air pump 31 may coincide or substantially coincide with the center line of the cavity 1. Schematically, the air pump 31 may be a mechanical pump, a molecular pump, etc. The bottom wall 13 may be provided with a first through hole 131. The first through hole 131 may be disposed at the center of the bottom of the cavity or near the center of the bottom. The air pump 31 may communicate with the inner cavity of the cavity 1, i.e., the accommodation cavity 14, through the first through hole 131. The air pump 31 may be used to extract the process gas in the accommodation cavity 14.

[0053] Combined with Figure 2 and Figure 3 As shown, the pressure control valve 32 may be disposed on the center line of the cavity 1, that is, the center line of the pressure control valve 32 may coincide or substantially coincide with the center line of the cavity 1. The pressure control valve 32 may be used to allow the process gas pumped by the air pump 31 to enter the cavity 1 at a set air pressure.

[0054] Such as Figure 3As shown, exemplarily, the pressure control valve 32 may include a driving assembly 321 and a valve plate 322. The driving assembly 321 may be at least partially located outside the accommodation chamber 14. The part of the driving assembly 321 located outside the accommodation chamber 14 may be connected to a driving device (not shown in the figure) so as to pass through the chamber wall 10 through the first through hole 131 under the drive of the driving device, such as a motor. The valve plate 322 may be located inside the accommodation chamber 14 and correspond to the first through hole 131. The center line of the valve plate 322 may coincide or substantially coincide with the center line of the cavity 1. The bottom wall 13 may be provided with a second through hole 132. The driving assembly 321 may pass through the second through hole 132 and be connected to the valve plate 322. The driving assembly 321 may be used to push the valve plate 322 to reciprocate relative to the air pump 31. That is, under the drive of the driving assembly 321, the valve plate 322 can move along the vertical direction of the cavity 1 to move away from or close to the first through hole 131. This vertical direction may be the center line direction of the first through hole 131. Schematically, when the process chamber 100 is arranged in the working environment, this vertical direction may be perpendicular or approximately perpendicular to the ground. When the driving assembly 321 moves towards the accommodation chamber 14, the valve plate 322 may be driven by the driving assembly 321 to move away from the bottom wall 13 and the first through hole 131. When the driving assembly 321 moves away from the accommodation chamber 14, the valve plate 322 may be driven by the driving assembly 321 to move close to the bottom wall 13 and the first through hole 131 until the valve plate 322 blocks the first through hole 131, so that the air pump 31 no longer extracts the process gas in the accommodation chamber 14. The lifting action of the pressure control valve 32 can adjust the distance between the pressure control valve 32 and the air pump 31, affect the total conductance in the accommodation chamber 14, and further control the air pressure in the discharge area in the accommodation chamber 14. Through the cooperation of the pressure control valve 32 and the air pump 31, and making the valve plate 322 symmetrical about the axis of the first through hole 131, when the air pump 31 extracts the process gas in the cavity 1, the process gas can flow symmetrically from both sides of the cavity 1 to the center of the bottom wall 13, and a relatively symmetrical flow field can be formed in the cavity 1, that is, in the accommodation chamber 14, improving the uniformity of the plasma distribution and being beneficial to improving the etching uniformity of the process chamber 100 for the wafer.

[0055] Figure 4 is a schematic structural diagram of a pressure control valve 32 provided by an embodiment of the present application, in combination with Figure 2 、 Figure 3 and Figure 4As shown, in a possible implementation, the pressure control valve 32 may include a plurality of driving components 321. Each driving component 321 correspondingly sets a second through hole 132 on the cavity 1. That is, the number of driving components 321 may be at least two, and the number of second through holes 132 may be equal to the number of driving components 321. Schematically, both the number of driving components 321 and the number of second through holes 132 may be two. These driving components 321 are symmetric about the axis of the first through hole 131, and each driving component 321 is arranged side by side at intervals. Each driving component 321 passes through each second through hole 132 and is connected to the valve plate 322. Each driving component 321 can be used to drive the valve plate 322 away from or close to the first through hole 131. When the number of both the driving components 321 and the second through holes 132 is multiple, the multiple driving components 321 act on the valve plate 322 together, which not only improves the smoothness of the movement of the valve plate 322, but also increases the flexibility of controlling the valve plate 322. Even if a certain driving component 321 fails, other driving components 321 can still continue to work, ensuring the reliability and continuity of the system. When the valve plate 322 is symmetric about the axis of the first through hole 131, these driving components 321 uniformly and symmetrically abut against the valve plate 322. This enables the valve plate 322 to receive a uniformly controllable acting force when the driving components 321 perform lifting actions, and the distance between the valve plate 322 and the air pump 31 can be adjusted more precisely, which is beneficial to forming a symmetric flow field in the accommodation cavity 14, improving the uniformity of plasma distribution, and ultimately enhancing the circumferential etching uniformity of the wafer in the process chamber 100.

[0056] Figure 5 is a schematic structural diagram of another pressure control valve 32 provided by an embodiment of the present application. Combining Figure 2 、 Figure 3 and Figure 5 As shown, in a possible implementation, a second through hole 132 may be provided on the cavity 1. The number of driving components 321 may be one. One driving component 321 passes through one second through hole 132 and is connected to the valve plate 322. The driving component 321 can be used to drive the valve plate 322 away from or close to the first through hole 131. That is, the distance between the valve plate 322 and the air pump 31 can also be adjusted by a single driving component 321. When the number of both the driving component 321 and the second through hole 132 is one, while driving the valve plate 322 away from or close to the first through hole 131, the structures of the driving component 321 and the cavity 1 are simplified, the manufacturing cost of the process chamber 100 is reduced, and the potential failure points of the process chamber 100 are reduced. In addition, the occupied space of a single driving component 321 is small, which is beneficial to arranging other components of the process chamber 100 around the flow field adjusting component 3.

[0057] Figure 6 is a schematic structural diagram of another pressure control valve 32 provided by an embodiment of the present application. Combining Figure 2 、Figure 3 and Figure 6 As shown in Figure 6 , in a possible implementation, the driving component 321 may include a first driving component 3211 and a plurality of second driving components 3212. The first driving component 3211 may be connected to a driving device (not shown in the figure). The plurality of second driving components 3212 are arranged side by side at intervals. The first driving component 3211 is connected to the second driving components 3212. The first driving component 3211 or the second driving components 3212 pass through the chamber wall 10 of the chamber 1 and are connected to the valve plate 322. In another possible implementation, both the first driving component 3211 and the second driving components 3212 may pass through the chamber wall 10 of the chamber 1 and be connected to the valve plate 322. The first driving component 3211 may be used to drive the second driving components 3212 to move, and the second driving components 3212 may be used to drive the valve plate 322 to move away from or close to the first through hole 131. The first driving component 3211 may serve as the main driving source, responsible for driving the second driving components 3212 to move, while the second driving components 3212 may be directly connected to and drive the valve plate 322. That is, these second driving components 3212 can all connect the valve plate 322 and the first driving component 3211 to form a "one-driving-many" driving structure. Exemplarily, the first driving component 3211 may lift and lower through a plurality of second through holes 132, and these second driving components 3212 can all be located within the chamber wall 10. Or, the first driving component 3211 may be located outside the chamber wall 10. One end of these second driving components 3212 respectively passes through a plurality of second through holes 132 and is connected to the valve plate 322, and the other ends can all be connected to the first driving component 3211. This design of hierarchical driving of the first driving component 3211 and the second driving components 3212 makes the driving force transmission more efficient, reduces energy loss, improves the response speed and driving efficiency of the entire driving system, is conducive to forming a relatively symmetrical gas flow field within the chamber 1, and thus ensures the etching uniformity of the process chamber 100 in the circumferential direction of the wafer.

[0058] It can be understood that Figure 6 as shown in Figure 6 and described above, there may be a plurality of second driving components 3212, which is just a schematic example. In fact, in another embodiment, there may be only one second driving component 3212, and the hierarchical driving of the first driving component 3211 and the second driving component 3212 can still be achieved.

[0059] Combined with Figure 2 、 Figure 3 and Figure 6 As shown in Figure 6 , in a possible implementation, an annular seal 3221 may be provided on the side of the valve plate 322 facing the first through hole 131 ( Figure 3The annular structure schematically shown by a thick dashed line), the annular seal 3221 can be made of, for example, rubber or an elastic polymer material. The annular seal 3221 forms a matching contact surface with the edge of the first through hole 131, and the annular seal 3221 can form a sealing fit with the edge of the first through hole 131 to block the first through hole 131. When the first driving assembly 3211 moves away from the accommodating cavity 14, the valve plate 322 can be driven by a plurality of second driving assemblies 3212 to approach the bottom wall 13 and the first through hole 131. When the valve plate 322 moves in the vertical direction and completely covers the first through hole 131, the annular seal 3221 is compressed and deformed to seal the cavity 1, so as to ensure the airtightness of the cavity 1, which is beneficial to form a relatively symmetric gas flow field in the cavity 1, and further ensures the circumferential etching uniformity of the wafer in the process chamber 100.

[0060] In some other embodiments, an annular seal may be provided on the side of the bottom wall 13 of the cavity 1 facing the valve plate 322. The annular seal is disposed around the periphery of the first through hole 131, and the geometric shapes of the annular seal and the edge of the first through hole 131 match to form complementary contact surfaces, ensuring that the two can fit completely when closed.

[0061] The above describes the realization of better flow field symmetry by setting the cooperation structure of an air pump and a symmetric pressure control valve in the process chamber. In the etching process, in order to meet the need of vacuum wafer transfer, a transfer opening for putting a wafer into the process chamber or taking a wafer out of the process chamber is provided on the side wall of the cavity. Since the transfer opening will destroy the structural symmetry of the cavity, a certain flow field asymmetry will be generated. The solution of the present application compensates for the flow field asymmetry caused by the transfer opening by providing a corresponding groove structure in the cavity.

[0062] See Figure 2 , the side wall 12 may include a first side wall 121 and a second side wall 122. The first side wall 121 may be disposed opposite to the second side wall 122. The first side wall 121, the second side wall 122, and the bottom wall 13 may participate in forming the accommodating cavity 14. The second side wall 122 may be provided with an opening 123. The opening 123 can be opened to communicate the internal and external spaces of the cavity 1, that is, to communicate the accommodating cavity 14 and the external space, so that the wafer can enter the accommodating cavity 14 through the opening 123, or can be closed to close the cavity 1. The process chamber 100 may further include a motor 124. The motor 124 can be used to control the lifting of the base 51 relative to the bottom wall 13, so that the first surface 511 of the base 51 can be located at a position aligned with the opening 123 to receive the wafer passing through the opening 123.

[0063] See Figure 2 , after the opening 123 is formed in the second side wall 122, the vacuum volume in the area of the accommodating cavity 14 close to the second side wall 122 increases, which will destroy the flow field symmetry of the accommodating cavity 14.

[0064] Figure 7 is a schematic structural diagram of a first side wall 121 provided by an embodiment of the present application. In combination with Figure 2 and Figure 7 as shown, a groove 125 may be provided on the first side wall 121 of the cavity 1. The opening of the groove 125 faces the opening 123, that is, the inner wall of the cavity 1 opposite to the opening 123. The first side wall 121 may be provided with the groove 125, which increases the vacuum volume in the area of the accommodation cavity 14 close to the first side wall 121 to balance the gas flow rates on both sides of the cavity 1. The groove 125 can compensate for the flow field asymmetry caused by the opening 123, which is beneficial to forming a symmetric flow field in the cavity 1 and improving the etching effect of the process chamber 100 on the wafer. The structure of the groove 125 can be determined as needed, and it can be adapted to the structural layout in the accommodation cavity 14. Schematically, the groove 125 may be goggle-shaped, that is, the inner surface of the groove 125 may include a curved surface. For example, the inner surface of the groove 125 may be half of an ellipsoidal surface.

[0065] Figure 8 is another schematic structural diagram of the first side wall 121 provided by an embodiment of the present application. Refer to Figure 8 , the groove 125 may be rectangular.

[0066] Figure 9 is another schematic structural diagram of the first side wall 121 provided by an embodiment of the present application. Refer to Figure 9 , the groove 125 may be trapezoidal, that is, the inner surface of the groove 125 may include several connected planes, and an angle may be formed between adjacent planes. From the bottom wall of the groove 125 to the opening of the groove 125, the diameter of the groove 125 may show an increasing trend, so that the groove 125 may approximately be in the shape of a "flare".

[0067] It can be understood that Figure 2 , Figures 6 - 9 as shown, the number of the grooves 125 is only one, which is just a schematic example. In another embodiment, the number of the grooves may be multiple, and the shape of the grooves may be one or more of goggle-shaped, rectangular, and trapezoidal.

[0068] It can be understood that Figure 2 , Figures 6 - 9 as shown, the shape of the groove 125 is just a schematic example. Actually, the shape of the groove is not limited to this, and it can be set according to the shape of the opening 123 to match the structural layout of the process chamber 100, so that the groove 125 can compensate for the flow field asymmetry caused by the opening 123 while ensuring a reasonable spatial layout of the process chamber 100.

[0069] Figure 10 is a schematic structural diagram of a conductive lining 15 provided by an embodiment of the present application. In combination withFigure 2 As shown in Figure 10 , the process chamber 100 may further include a conductive inner liner 15 and an upper housing 16. The conductive inner liner 15 may be cylindrical, and the material of the conductive inner liner 15 may include aluminum, titanium, polysilicon, and single crystal silicon with a coating or a hard anodized layer. The lower electrode 5, the conductive inner liner 15, and the upper housing 16 may enclose to form a process area 17. Schematically, the conductive inner liner 15 and the upper housing 16, etc., may be components of the upper electrode. An air extraction port 151 may be provided at the bottom of the conductive inner liner 15, and the air extraction port 151 may surround the first surface 511 of the base 51, that is, the first surface 511 is located within the process area 17.

[0070] Figure 11 is a top view of a conductive inner liner 15 provided by an embodiment of the present application. Combining Figure 2 、 Figure 10 As shown in Figure 11 , a plurality of through-hole groups 152 may be provided at the bottom of the conductive inner liner 15. The plurality of through-hole groups 152 are arranged around the air extraction port 151, and the plurality of through-hole groups 152 are evenly distributed around the center line of the conductive inner liner 15. For example, four through-hole groups 152 may be provided at the bottom of the conductive inner liner 15, and the four through-hole groups 152 are evenly distributed along the circumferential direction of the air extraction port 151 at the bottom of the conductive inner liner 15. Each through-hole group 152 includes at least one fourth through-hole 1523. Schematically, each through-hole group 152 may include three fourth through-holes 1523. The through-hole groups 152 may be used for process gas to pass through. By providing a plurality of symmetrically distributed through-hole groups 152 at the bottom of the conductive inner liner 15, a relatively symmetric flow field may be formed when the air pump 31 evacuates the cavity 1, which is beneficial to improving the symmetry of the flow field; and a sufficiently high gas conductance may also be formed, which is beneficial to the etching process.

[0071] Combining Figure 2 、 Figure 10 and Figure 11As shown, in one possible implementation, each via group 152 may include a plurality of fourth vias 1523 respectively distributed on different radial lines of the conductive inner liner 15, and the fourth vias 1523 may be trapezoidal in shape. Along the direction from the outer side to the inner side of the conductive inner liner 15, the caliber of each fourth via 1523 may show a decreasing trend. Schematically, the via group 152 may have a first end 1521 and a second end 1522. The first end 1521 and the second end 1522 may be opposite ends in the extending direction of the via group 152 respectively. The center of the air extraction port 151, the first end 1521, and the second end 1522 may be arranged in sequence. From the first end 1521 to the second end 1522, the width of each fourth via 1523 may show an increasing trend, that is, the via group 152 may be radially arranged in the direction away from the air extraction port 151. The plasma in the process area 17 is more likely to escape the closer it is to the air extraction port 151. By making the width of the via group 152 closer to the air extraction port 151 smaller, the conductive inner liner 15 can effectively confine the plasma and reduce the amount of plasma leaking from the via group 152. By making the width of the via group 152 farther away from the air extraction port 151 larger, the bottom of the conductive inner liner 15 can have a sufficiently large exhaust area to form a relatively symmetric flow field when the air pump 31 evacuates the accommodation chamber 14, which is beneficial to improving the symmetry of the flow field, and thus ensures the etching uniformity of the wafer in the process chamber 100; it can also form a sufficiently high gas conductance, which is beneficial to the progress of the etching process; since the plasma farther away from the air extraction port 151 is not easy to escape, increasing the width of the via group 152 farther away from the air extraction port 151 will not cause excessive plasma to leak from the via group 152.

[0072] Figure 12 is a top view of another conductive inner liner 15 provided by an embodiment of the present application. Combining Figure 2 、 Figure 10 and Figure 12As shown, in a possible implementation, each via group 152 may include a plurality of fourth vias 1523 distributed on the same radial line of the conductive inner liner 15. Schematically, the fourth vias 1523 may be circular. Along the direction from the outer side to the inner side of the conductive inner liner 15, the via area of the fourth vias 1523 in each via group 152 shows a decreasing trend. That is, from the second end 1522 to the first end 1521, the diameter of the fourth vias 1523 shows a decreasing trend. By making the via area of the fourth vias 1523 close to the air extraction port 151, that is, close to the inner side of the conductive inner liner 15, smaller, the conductive inner liner 15 can effectively confine the plasma and reduce the amount of plasma leakage from the fourth vias 1523. By making the via area of the fourth vias 1523 far from the air extraction port 151, that is, close to the outer side of the conductive inner liner 15, larger, the bottom of the conductive inner liner 15 can have a sufficiently large exhaust area to form a relatively symmetric flow field when the air pump 31 evacuates the accommodation chamber 14, which is beneficial to improving the symmetry of the flow field, and further ensures the etching uniformity of the wafer in the process chamber 100; it can also form a sufficiently high gas conductance, which is beneficial to the progress of the etching process; since the plasma far from the air extraction port 151 is not easy to escape, increasing the via area of the fourth vias 1523 far from the air extraction port 151 will not cause excessive plasma leakage from the via group 152.

[0073] Combined with Figure 2 , Figure 10 and Figure 12 As shown, in a possible implementation, each via group 152 may include a plurality of subgroups 1524. Each subgroup 1524 may include a plurality of fourth vias 1523 distributed on the same radial line of the conductive inner liner 15. The part of the conductive inner liner 15 between the plurality of fourth vias 1523 on the same radial line can reduce the amount of plasma leakage from the via group 152. That is, the plurality of fourth vias 1523 distributed at intervals can effectively confine the plasma while ensuring the exhaust area. In this implementation, these subgroups 1524 in each via group 152 can be respectively distributed on different radial lines of the conductive inner liner 15. The plurality of subgroups 1524 respectively distributed on different radial lines can affect most areas of the conductive inner liner 15, thereby ensuring the circumferential exhaust uniformity of the process area and at the same time taking into account restricting the amount of plasma leakage in the entire process area 17, and further improving the circumferential etching non-uniformity of the wafer in the process chamber 100.

[0074] Figure 13 FIG. is a top view of another conductive inner liner 15 provided by an embodiment of the present application. Combined with Figure 2 , Figure 10 and Figure 13As shown, in one possible implementation, each through-hole group 152 may include a plurality of fourth through-holes 1523 respectively distributed on different radial lines of the conductive inner liner 15, and the fourth through-holes 1523 may be spindle-shaped. Along the direction from the outer side to the inner side of the conductive inner liner 15, the caliber of each fourth through-hole 1523 may show a decreasing trend. From the first end 1521 to the second end 1522, the width of each fourth through-hole 1523 may show an increasing trend, that is, the through-hole group 152 may be radially distributed away from the air extraction port 151. This can ensure that the conductive inner liner 15 effectively confines the plasma, and at the same time, a sufficiently large exhaust area can be formed at the bottom of the conductive inner liner 15 to form a relatively symmetric flow field when the air pump 31 evacuates the accommodation cavity 14, which is beneficial to improving the symmetry of the flow field; a sufficiently high gas conductance can also be formed, which is beneficial to the etching process.

[0075] Figure 14 is a top view of another conductive inner liner 15 provided by an embodiment of the present application. Combining Figure 2 、 Figure 10 and Figure 14 As shown, in one possible implementation, each through-hole group 152 may include a plurality of fourth through-holes 1523 distributed on the same radial line of the conductive inner liner 15. Schematically, the fourth through-holes 1523 may be arc-shaped. Along the direction from the outer side to the inner side of the conductive inner liner 15, the through-hole area of the fourth through-holes 1523 in each through-hole group 152 shows a decreasing trend. That is, from the second end 1522 to the first end 1521, the diameter of the fourth through-holes 1523 shows a decreasing trend. The regular arc-shaped fourth through-holes 1523 can also form a sufficiently high gas conductance while improving the symmetry of the flow field, which is beneficial to improving the etching uniformity of the process chamber 100 for the wafer.

[0076] The above introduces the solution of the embodiment of the present application to obtain good flow field symmetry by setting a flow field adjustment component in the process chamber, setting grooves on the side wall of the cavity, and opening uniformly distributed through-holes on the conductive inner liner. Next, the solution for realizing radio frequency symmetry in the embodiment of the present application will be continued to be described.

[0077] Combining Figure 2 with Figure 10As shown, different from the prior art, in the embodiment of the present application, the opening 123 is not provided on the conductive inner liner 15, but is provided on the inner side wall 12 of the cavity 1. This can avoid destroying the radio frequency symmetry and ensure good radio frequency symmetry. When transferring the wafer to the accommodation cavity 14, the conductive inner liner 15 can be fixed relative to the cavity 1. It is necessary to use the motor 124 to control the relative movement of the lower electrode 5 and the return disk 4 with respect to the cavity 1. Schematically, first, the motor 124 is used to control the base 51 to move away from the conductive inner liner 15, and the first surface 511 can be disengaged from the process area 17 and reach a position aligned with the opening 123 to receive the wafer passing through the opening 123; then, the motor 124 is used to control the base 51 to return along the original path, and the first surface 511 carrying the wafer returns to the process area 17. By providing a conductive inner liner without a wafer transfer opening in the cavity 1, the radio frequency return symmetry of the process area 17, that is, the discharge area, can be ensured, which is beneficial to improving the etching uniformity of the process chamber 100.

[0078] See Figure 2 , the upper housing 16 can be electrically connected to the feeding device 2. When the electrode structure 513 provided on the base 51 is electrically connected to the feeding device 2, the feeding device 2 simultaneously provides radio frequency current to the upper housing 16 and the electrode structure 513, and an electric field can be formed between the upper housing 16 and the lower electrode 5.

[0079] See Figure 2 , the process area 17 can be used to introduce process gas. The process gas can be ionized by the electric field in the process area 17 to form plasma, and the plasma bombards the surface of the wafer carried by the first surface 511 of the base 51 for etching.

[0080] The above details how the present application ensures the radio frequency return symmetry of the discharge area by providing a conductive inner liner without a wafer transfer opening in the cavity, which is beneficial to improving the etching uniformity of the process chamber. The embodiment of the present application can also improve the radio frequency return symmetry by providing a return disk in the cavity.

[0081] See Figure 2 , the return disk 4 can be located below the lower electrode 5. One end of the return disk 4 can be electrically connected to the electrode structure 513, where the electrode structure 513 can be an annular loop. The other end of the return disk 4 can be electrically connected to the feeding device 2. The return disk 4 can be used to provide a return path for the radio frequency signal, that is, the radio frequency current.

[0082] Figure 15 is a schematic structural diagram of a return disk 4 provided by an embodiment of the present application. Combining Figure 2 with Figure 15As shown, by way of example, the reflux tray 4 may have a T-shaped symmetric structure. The reflux tray 4 may include a connected main body 41 and a base 42. Both the main body 41 and the base 42 may be of a rotary body type. The axis of the main body 41 may coincide with the axis of the base 42. The projection of the base 42 along the axis may fall within the boundary of the main body 41. The main body 41 may be in the shape of a disc, a cylinder, a cone, or a round cap. Combining Figure 15 with Figure 1 as shown, the main body 41 may be electrically connected to the electrode structure 513. The base 42 may be columnar.

[0083] As Figure 15 shown, by way of example, a fifth through-hole 44 may be provided on the reflux tray 4. The fifth through-hole 44 may penetrate through the main body 41 and the base 42 along the axis of the reflux tray 4, and openings are formed on both the main body 41 and the base 42. By way of example, the center line of the fifth through-hole 44 may coincide or approximately coincide with the axis of the reflux tray 4. The fifth through-hole 44 is used for the radio frequency feed-in member 23 to be described below to pass through.

[0084] Combining Figure 2 with Figure 15 as shown, in a possible implementation, the feeding device 2 may include a feeding power source 21, a matcher 22, a radio frequency feed-in member 23, and a grounding portion 24. Among them, the feeding power source 21, the matcher 22, and the radio frequency feed-in member 23 may be connected in sequence. The feeding power source 21 is used to output radio frequency current. The matcher 22 is used to achieve impedance matching to ensure maximum power transmission. The radio frequency feed-in member 23 is used to feed the lower electrode 5. The grounding portion 24 may be electrically connected to the matcher 22 and is used to achieve radio frequency reflux.

[0085] As Figure 15 shown, by way of example, the radio frequency feed-in member 23 may be columnar or rod-shaped, and the grounding portion 24 may be coated on the outer surface of the radio frequency feed-in member 23. The radio frequency feed-in member 23 may penetrate into the reflux tray 4 from the opening of the fifth through-hole 44 on the base 42 and penetrate out from the opening of the fifth through-hole 44 on the main body 41. The grounding portion 24 may penetrate only into the part of the fifth through-hole 44 on the base 42, or may penetrate into the part of the fifth through-hole 44 on the base 42 and the part of the fifth through-hole 44 on the main body 41. Among them, the grounding portion 24 may be in contact with the inner wall of the fifth through-hole 44, that is, the grounding portion 24 may be electrically connected to the reflux tray 4; the grounding portion 24 separates the inner wall of the fifth through-hole 44 from the radio frequency feed-in member 23, so that the radio frequency feed-in member 23 is not electrically connected to the reflux tray 4. Combining Figure 15 with Figure 1 as shown, both the end of the radio frequency feed-in member 23 and the end of the grounding portion 24 away from the reflux tray 4 may be electrically connected to the matcher 22 of the feeding device 2. The end of the radio frequency feed-in member 23 that penetrates out of the fifth through-hole 44 may be electrically connected to the base 51 of the lower electrode 5.

[0086] Combining Figure 2 withFigure 15 As shown, the feed power supply 21, the matcher 22, the RF feed-in member 23 and the base 51 of the lower electrode 5 can be connected in sequence to form an RF feed-in circuit, and the RF current is fed into the lower electrode 5 through this RF feed-in circuit. Combining Figure 1 with Figure 15 As shown, the electrode structure 513 of the lower electrode 5, the main body 41 of the return disk 4, the base 42 of the return disk 4, the grounding portion 24 and the matcher 22 can be connected in sequence to form an RF return circuit, and the RF return flows back through this RF return circuit.

[0087] Referring to Figure 2 , in a possible implementation manner, at least part of the feeding device 2 can be arranged on the side of the first side wall 121 facing away from the base 51, that is, at least part of the feeding device 2 can be arranged outside the cavity 1. This design is called RF side feeding. For example, the feed power supply 21 and the matcher 22 of the feeding device 2 can be arranged outside the cavity 1, part of the RF feed-in member 23 of the feeding device 2 can be arranged outside the cavity 1, and the other part of the RF feed-in member 23 can be arranged inside the cavity 1.

[0088] In this embodiment, by arranging the return disk 4, the distribution of the RF return can be adjusted, the asymmetry of the RF return caused by the RF side feeding can be compensated, and the symmetry of the RF return can be improved. By arranging the main body 41 and the base 42 in the return disk 4, the transmission characteristics of the RF return can be matched, so that the RF return can converge from the periphery of the main body 41 to the center of the main body 41 and continue to be transmitted along the base 42 (this can be called the "necking" of the RF return), which is beneficial to improving the symmetry of the RF return.

[0089] Combining Figure 2 with Figure 15 As shown, in a possible implementation manner, the main body 41 can be disk-shaped, and a third through hole 43 can be arranged in the semi-disk area of the main body 41 close to the first side wall 121, or in other words, a third through hole 43 is arranged in the semi-disk area of the main body 41 close to the feeding device 2. Among them, this semi-disk area refers to half of the disk shape. Therefore, the third through hole 43 is eccentrically arranged relative to the center of the main body 41 (or the fifth through hole 44). The third through hole 43 can be symmetric about the axis of the main body 41 (or the center line of the fifth through hole 44). Schematically, the third through hole 43 can be annular or arc-shaped. The third through hole 43 can be located between the feeding device 2 and the axis of the main body 41.

[0090] In this embodiment, since the feeding device 2 is arranged outside the first side wall 121 (i.e., radio frequency side feeding), the radio frequency current is fed into the accommodation cavity 14 from the side of the cavity 1. This makes the current density near the first side wall 121 in the cavity 1 relatively large, and the radio frequency current distribution in the accommodation cavity 14 is uneven. However, by arranging the third through holes 43 in the semi-circular disk area of the main body 41 close to the feeding device 2, the radio frequency current on the main body 41 can be made not to flow through the non-conductive area where the third through holes 43 are located, thereby changing the current distribution on the main body 41, further compensating for the radio frequency intrinsic asymmetry brought by radio frequency side feeding, improving the radio frequency return symmetry of the accommodation cavity 14, and being beneficial to improving the etching effect of the process chamber 100 on the wafer.

[0091] In another possible implementation manner, the feeding device 2 can be arranged outside the second side wall 122. The radio frequency current is fed into the accommodation cavity 14 from the side of the cavity 1. This makes the current density near the second side wall 122 in the cavity 1 relatively large, and the radio frequency current distribution in the accommodation cavity 14 is uneven; by arranging the third through holes 43 in the semi-circular disk area of the main body 41 close to the second side wall 122, the radio frequency current on the main body 41 can be made not to flow through the non-conductive area where the third through holes 43 are located, changing the current distribution on the main body 41, further compensating for the radio frequency intrinsic asymmetry brought by radio frequency current side feeding, improving the radio frequency return symmetry of the accommodation cavity 14, and being beneficial to improving the etching effect of the process chamber 100.

[0092] Figure 16 It is a schematic structural diagram of another return disk 4 provided by the embodiment of the present application. Combining Figure 2 with Figure 16 As shown, in a possible implementation manner, the main body 41 can be provided with a plurality of third through holes 43, and the plurality of third through holes 43 can be respectively distributed on different radial lines of the main body 41, that is, the extension lines of the plurality of third through holes 43 can intersect at the center of the main body 41. Schematically, the third through holes 43 can be strip-shaped. The solution of this embodiment can optimize the transmission path of the radio frequency signal, offset the non-uniformity in the transmission process of the radio frequency signal to a certain extent, compensate for the radio frequency intrinsic asymmetry brought by radio frequency current side feeding, improve the radio frequency return symmetry of the accommodation cavity 14, and be beneficial to improving the etching effect of the process chamber 100. In addition, the maintainability of the lower electrode cable and water pipe can also be improved.

[0093] Figure 17 It is a schematic structural diagram of another return disk 4 provided by the embodiment of the present application. Referring to Figure 17 , the third through holes 43 can be circular. It can be understood that Figures 15 - 17The number and shape of the third through-holes shown are only illustrative. In actual embodiments of the present application, the third through-holes can be one or more, and the shape of the third through-holes can be one or more of an annular shape, a circular shape, and an elongated shape, or can also be other shapes that meet the product requirements. The third through-holes 43 with regular shapes can optimize the transmission path of radio frequency signals, thereby offsetting the non-uniformity during the transmission of radio frequency signals to a certain extent, further improving the symmetry of radio frequency reflux in the process chamber 100, and being beneficial to improving the etching effect of the process chamber 100 on the circumferential direction of the crystal ring.

[0094] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application; without conflict, the possible implementation manners of the present application and the features in the possible implementation manners can be combined with each other. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A process chamber, characterized in that: include: A cavity, wherein a first through hole is provided at the bottom center of the cavity; an air pump, the air pump being disposed outside the cavity and communicating with the first through hole; A pressure control valve, comprising a valve plate and at least one driving assembly, wherein the valve plate is disposed in the cavity and faces the first through hole, and the at least one driving assembly passes through the cavity and is connected to the valve plate; the valve plate can be driven by the at least one driving assembly to move in a vertical direction of the cavity to move away from or close to the first through hole; A lower electrode, the lower electrode being located in the cavity; A feeding device, the feeding device is arranged outside the cavity, the feeding device passes through the side wall of the cavity and is connected to the lower electrode, and the feeding device is used to feed power to the lower electrode; A reflux disk, the reflux disk is located in the cavity and below the lower electrode, the reflux disk is used to provide a reflux path for the radio frequency signal, and the reflux disk is provided with at least one third through hole, and the at least one third through hole is located in a semi-circular disk area of ​​the reflux disk close to the feeding device.

2. The process chamber according to claim 1, characterized in that: The cavity is provided with at least one second through hole, The at least one driving component is one, the at least one second through hole is one, the driving component passes through the second through hole and is connected to the valve plate, and the driving component is used to drive the valve plate away from or close to the first through hole; Or, the at least one driving assembly includes a plurality of driving assemblies, each driving assembly is correspondingly provided with a second through hole on the cavity, the at least one second through hole is a plurality of driving assemblies, each second through hole corresponds to the position of each driving assembly, each driving assembly is arranged side by side and spaced apart, each driving assembly passes through each second through hole and is connected to the valve plate, and each driving assembly is used to drive the valve plate away from or close to the first through hole; Or, the at least one driving component includes multiple components, the at least one driving component includes a first driving component and multiple second driving components, the multiple second driving components are arranged side by side and spaced apart, the first driving component is connected to the multiple second driving components, the first driving component and / or the multiple second driving components pass through the cavity wall of the cavity and are connected to the valve plate, the first driving component is used to drive the multiple second driving components to move, and the multiple second driving components are used to drive the valve plate away from or close to the first through hole.

3. The process chamber according to claim 1, characterized in that: An annular seal is provided on one side of the valve plate facing the first through hole, and the annular seal forms a matching contact surface with the edge of the first through hole. When the valve plate moves along the vertical direction and completely covers the first through hole, the annular seal is compressed and deformed to seal the cavity.

4. The process chamber according to claim 1, characterized in that: The at least one third through hole has a shape of one or more of an annular shape, a circular shape, and a long strip shape.

5. The process chamber according to any one of claims 1 to 4, characterized in that: The cavity is provided with an opening for the substrate to enter and exit, and the inner wall of the cavity opposite to the opening is provided with a groove.

6. The process chamber according to claim 5, characterized in that: The shape of the groove is at least one of goggle-shaped, rectangular, and trapezoidal.

7. The process chamber according to any one of claims 1 to 4, characterized in that: The process chamber also includes a conductive liner, which is located in the process chamber and is used to enclose a process area with the lower electrode of the process chamber; the conductive liner is provided with a plurality of through hole groups, each of the through hole groups includes at least one fourth through hole, and the plurality of through hole groups are evenly distributed around the center line of the conductive liner.

8. The process chamber according to claim 7, characterized in that: Each of the through hole groups includes a plurality of fourth through holes distributed on the same radial line of the conductive lining; along the direction from the outer side of the conductive lining to the inner side of the conductive lining, the through hole area of ​​the fourth through holes in each of the through hole groups tends to decrease.

9. The process chamber according to claim 7, characterized in that: Each of the through-hole groups includes a plurality of sub-groups, each of the sub-groups includes a plurality of fourth through-holes distributed on a same radial line of the conductive liner, and the plurality of sub-groups are respectively distributed on different radial lines of the conductive liner.

10. The process chamber according to claim 7, characterized in that: Each of the through hole groups includes a plurality of fourth through holes respectively distributed on different diameter lines of the conductive liner; along the direction from the outer side of the conductive liner to the inner side of the conductive liner, the diameter of each of the fourth through holes tends to decrease.

11. A semiconductor device, characterized in that: include: A process chamber as claimed in any one of claims 1 to 10.

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