Cooling module of heterointegration semiconductor packaging structure

Abstract

The invention discloses a cooling module of a hetero-integrated semiconductor packaging structure. The heterogeneous integrated semiconductor packaging structure is arranged on a circuit substrate; the cooling module comprises a cooling plate and a plurality of nanowires, and the nanowires can be used for connecting the cooling plate, connecting the cooling plate with the heterogeneous integration semiconductor packaging structure, connecting the cooling plate with the circuit substrate, or connecting the cooling plate with the heterogeneous integration semiconductor packaging structure and the circuit substrate.

Description

Technical Field

[0001] The present invention relates to a cooling module, and in particular to a cooling module configured to cool a semiconductor packaging structure. Background Art

[0002] With the advent of the high-computing era of artificial intelligence (AI), the demand for high-performance computing (HPC) and high-frequency and high-speed transmission is increasing day by day, and heterogeneous integrated packaging structures and silicon photonics packaging structures are gradually coming to the fore.

[0003] However, the higher the computing power or the higher the transmission speed of semiconductor packaging structures, the more they face the need for heat dissipation design with high power density or high power consumption. Existing air cooling technology has been unable to cope with the increasing heat dissipation, so the future development trend of heat dissipation technology for servers or data centers has gradually shifted from air cooling to liquid cooling. The current liquid cooling technology uses a liquid cooling plate in contact with the computing element, and the coolant flows through the inside of the liquid cooling plate to take away the heat of the computing element, thereby achieving the purpose of cooling the computing element.

[0004] However, the most critical technology in the entire liquid cooling system is the sealing design, because once there is any leakage in the liquid cooling system, it may cause a short circuit, and in severe cases, it may even cause the system to burn out. Therefore, a sealing technology with simple manufacturing process and good sealing degree is what the industry is eagerly looking forward to. Summary of the invention

[0005] In view of this, an embodiment of the present invention provides a cooling module for a heterogeneously integrated semiconductor packaging structure, which utilizes a cooling fluid to dissipate heat from the semiconductor packaging structure. In addition to improving the defects of the prior art, it can further meet the heat dissipation requirements faced by high computing power and high-speed transmission.

[0006] An embodiment of the present invention provides a cooling module for a heterogeneous integrated semiconductor package structure, which is arranged on a circuit substrate; the cooling module includes a cooling plate and a plurality of nanowires, which can be used to join the cooling plate with the heterogeneous integrated semiconductor package structure, and can also be used to join the cooling plate with the circuit substrate, or used to join the cooling plate with the heterogeneous integrated semiconductor package structure and the circuit substrate.

[0007] In some embodiments, the cooling module may further include an intermediate foil, and the nanowires may be disposed on two corresponding surfaces of the intermediate foil respectively.

[0008] In some embodiments, the cooling plate may include a first surface, and the heterogeneous integrated semiconductor package structure or the circuit substrate may include a second surface; and the nanowires may be located on the first surface or the second surface.

[0009] In some embodiments, the cooling plate may include a first surface, and the heterogeneous integrated semiconductor package structure or the circuit substrate may include a second surface; the nanowires may be located on the first surface and the second surface.

[0010] In some embodiments, the cooling module may further include a metal film or a metal frame, and the metal film or the metal frame may be disposed on the circuit substrate.

[0011] In some embodiments, the cooling plate may be a vapor chamber that contacts the metal frame.

[0012] In some embodiments, the cooling module may further include a fluid supply module, and a fluid channel is disposed in the metal frame, and the fluid channel may be connected to the fluid supply module; and the fluid supply module is suitable for supplying a cooling fluid to the fluid channel.

[0013] In some embodiments, the heterogeneously integrated semiconductor packaging structure may include a first heat generating portion and a second heat generating portion, and the heat dissipation design power of the first heat generating portion is greater than the heat dissipation design power of the second heat generating portion; and the cooling plate may include a plurality of fluid supply holes, which correspond to the first heat generating portion and the second heat generating portion, respectively; wherein the cooling fluid flow rate sprayed to the first heat generating portion through the fluid supply holes is greater than the cooling fluid flow rate sprayed to the second heat generating portion.

[0014] In some embodiments, the cooling plate may further include a main fluid chamber, a fluid supply chamber, a fluid recovery chamber, and a plurality of fluid recovery holes; the first heating portion and the second heating portion are located in the main fluid chamber; the fluid supply holes are connected to the main fluid chamber and the fluid supply chamber; the fluid recovery holes are connected to the main fluid chamber and the fluid recovery chamber. The arrangement density of the fluid supply holes corresponding to the first heating portion is higher than the arrangement density of the fluid supply holes corresponding to the second heating portion.

[0015] In some embodiments, the cooling module may further include a fluid storage unit, a fluid supply pipeline, a fluid recovery pipeline, a liquid supply pump, and a gas recovery pump; the fluid storage unit stores cooling fluid; the two ends of the fluid supply pipeline and the fluid recovery pipeline may be connected to the fluid storage unit and the cooling plate respectively; the liquid supply pump may be arranged in the fluid supply pipeline; the gas recovery pump may be arranged in the fluid recovery pipeline. The cooling fluid is supplied to the cooling plate through the liquid supply pump and the fluid supply pipeline, and the evaporated cooling fluid is sucked from the cooling plate through the gas recovery pump and the fluid recovery pipeline.

[0016] In some embodiments, the cooling module may further include a fluid storage unit, a fluid supply pipeline, a fluid recovery pipeline, a first fluid pump, and a second fluid pump; a cooling fluid may be stored in the fluid storage unit; two ends of the fluid supply pipeline may be connected to the fluid storage unit and the cooling plate respectively; two ends of the fluid recovery pipeline may be connected to the fluid storage unit and the cooling plate respectively; the first fluid pump may be arranged on the fluid supply pipeline; and the second fluid pump may be arranged on the fluid recovery pipeline. The cooling fluid may be supplied to the cooling plate from the fluid supply pipeline through the first fluid pump, or may be supplied to the cooling plate from the fluid recovery pipeline through the second fluid pump.

[0017] An embodiment of the present invention provides a cooling module for a heterogeneous integrated semiconductor package structure, comprising a cooling plate and a bonding interface, wherein the bonding interface comprises a plurality of nanowires. The cooling plate comprises a first component and a second component, wherein the first component and the second component are bonded to each other through the bonding interface, and the bonding is performed at a temperature below 300°C.

[0018] In some embodiments, the bonding interface may further include a first surface and a second surface; the first surface may be located on the first component, and the second surface may be located on the second component; and the first surface may include the nanowires.

[0019] In some embodiments, the second surface may include the nanowires.

[0020] In some embodiments, the bonding interface may further include a first surface, a second surface and an intermediate foil; the first surface may be located on the first component, the second surface may be located on the second component; and the nanowires may be arranged on two corresponding surfaces of the intermediate foil respectively.

[0021] In some embodiments, the first component may be a hollow plate, and the second component may be a fluid conduit; and the hollow plate may include an inner chamber and an opening, and the fluid conduit may be coupled to the opening via a coupling interface.

[0022] In some embodiments, the bonding interface may further include a first surface, a second surface and an intermediate foil; the first surface may be located at the opening, and the second surface may be located at an end of the fluid conduit; and the nanowires may be arranged on two corresponding surfaces of the intermediate foil.

[0023] In some embodiments, the heterogeneous integrated semiconductor package structure may be disposed on an upper surface of a circuit substrate; the first component may be disposed on the heterogeneous integrated semiconductor package structure, and the second component may be disposed on a lower surface of the circuit substrate.

[0024] In some embodiments, the second component may include a plurality of protrusions, which may protrude toward the first component and be coupled to the first component along the side edge of the circuit substrate.

[0025] In some embodiments, the circuit substrate may include a plurality of through holes; the second component may include a plurality of protrusions, which may respectively pass through the through holes to be joined to the first component; the first component includes an internal chamber and a plurality of openings; and the second component may include a plurality of flow channels, which may respectively extend to the protrusions and be connected to the internal chamber through the openings.

[0026] Based on the above, the present invention proposes a cooling module of a heterogeneous integrated semiconductor packaging structure, which uses nanowire bonding technology and can easily achieve rapid bonding at room temperature; if higher bonding strength is required, a low-temperature manufacturing process (below 300°C) can also be used, without heating to the melting point of the metal, so the microchannel surface or micropores in the cooling module will not be deformed, modified or otherwise affected. In addition, bonding can be easily completed without applying high bonding pressure; and after bonding, it has high shear strength (up to 60MPa), and excellent thermal conductivity and sealing effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1A It is a cross-sectional schematic diagram of an embodiment of the cooling module of the present invention being bonded to a heterogeneous integrated semiconductor package structure;

[0028] Figure 1B It is a cross-sectional schematic diagram of another embodiment of the cooling module of the present invention being bonded to a heterogeneous integrated semiconductor package structure;

[0029] Figure 1C A cross-sectional schematic diagram of another embodiment of the present invention in which a cooling module is bonded to a heterogeneous integrated semiconductor package structure;

[0030] Figure 1D It is a cross-sectional schematic diagram of another embodiment of the cooling module of the present invention being bonded to a heterogeneous integrated semiconductor package structure;

[0031] Figure 2A A cross-sectional schematic diagram of an embodiment of the present invention in which a cooling module is joined to a circuit substrate;

[0032] Figure 2B A cross-sectional schematic diagram of another embodiment of the present invention in which a cooling module is joined to a circuit substrate;

[0033] Figure 2C is a cross-sectional schematic diagram of another embodiment of the present invention in which the cooling module is joined to the circuit substrate;

[0034] Figure 2D is a cross-sectional schematic diagram of another embodiment of the present invention in which the cooling module is joined to the circuit substrate;

[0035] Figure 3A A cross-sectional schematic diagram of an embodiment of the present invention in which a cooling module is joined to a metal frame;

[0036] Figure 3B A cross-sectional schematic diagram of another embodiment of the present invention in which a cooling module is joined to a metal frame;

[0037] Figure 3C is a cross-sectional schematic diagram of another embodiment of the present invention in which a cooling module is joined to a metal frame;

[0038] Figure 3D is a cross-sectional schematic diagram of yet another embodiment of the present invention in which a cooling module is joined to a metal frame;

[0039] Figure 4A A schematic cross-sectional view of a cooling module according to an embodiment of the present invention;

[0040] Figure 4B A schematic cross-sectional view of another embodiment of a cooling module of the present invention;

[0041] Figure 4C A schematic cross-sectional view of another embodiment of a cooling module of the present invention;

[0042] Figure 4D A schematic cross-sectional view of a further embodiment of a cooling module of the present invention;

[0043] Figure 5A A schematic cross-sectional view of a pipe connection of an embodiment of a cooling module of the present invention;

[0044] Figure 5B A cross-sectional schematic diagram of a pipe connection of another embodiment of a cooling module of the present invention;

[0045] Figure 5C A cross-sectional schematic diagram of a pipe connection of another embodiment of a cooling module of the present invention;

[0046] Figure 5D A schematic cross-sectional view of a pipe connection of another embodiment of a cooling module of the present invention;

[0047] Figure 6 It is a cross-sectional schematic diagram of a specific application embodiment of the cooling module of the present invention;

[0048] Figure 7 It is a cross-sectional schematic diagram of another specific application embodiment of the cooling module of the present invention;

[0049] Fig. 8A A schematic diagram of another specific application embodiment of the cooling module of the present invention;

[0050] Figure 8B for Fig. 8A A cross-sectional schematic diagram of an embodiment of the present invention;

[0051] Fig. 9 It is a schematic diagram of another specific application embodiment of the cooling module of the present invention;

[0052] Fig. 10A It is a cross-sectional schematic diagram of another specific application embodiment of the cooling module of the present invention;

[0053] Fig. 10B It is a cross-sectional schematic diagram of another specific application embodiment of the cooling module of the present invention.

[0054] Explanation of symbols

[0055] 2: Cooling module

[0056] 4: Fluid supply module

[0057] 5: Liquid chamber

[0058] 6: Gas chamber

[0059] 7:Through hole

[0060] 21: Bonding interface

[0061] 22: Intermediary Foil

[0062] 23: First Component

[0063] 24: Second component

[0064] 31: Fluid storage unit

[0065] 32: Fluid supply pipeline

[0066] 33: Fluid recovery pipeline

[0067] 34: Liquid supply pump

[0068] 35: Gas recovery pump

[0069] 36: First fluid pump

[0070] 37: Second fluid pump

[0071] 41: Fluid channel

[0072] 211: First surface

[0073] 212: Second surface

[0074] 231: Opening

[0075] 241: protrusion

[0076] 242: Runner

[0077] B: Circuit board

[0078] B1:Through hole

[0079] I: Heterogeneous integrated semiconductor packaging structure

[0080] I1: The first heating part

[0081] I2: Second heating part

[0082] Lm:Metallic film

[0083] nw: nanowire

[0084] P: Cooling plate

[0085] P1: Main fluid chamber

[0086] P2: Fluid supply chamber

[0087] P3: Fluid Recovery Chamber

[0088] Pc: Internal chamber

[0089] Pb:Hollow board

[0090] Po: Open

[0091] Pp: Fluid Pipe

[0092] Pr: Fluid recovery hole

[0093] Ps: Fluid supply hole

[0094] Sm:Metal frame

[0095] T:Nanowire Tape DETAILED DESCRIPTION

[0096] Various embodiments are presented below for detailed description, and the embodiments are only used as examples and do not limit the scope of the invention. In addition, some elements are omitted in the drawings in the embodiments to clearly show the technical features of the invention. Furthermore, the same reference numerals will be used to represent the same or similar elements in all drawings, and the drawings of the invention are only for schematic illustration, which may not be drawn to scale, and all details may not be fully presented in the drawings.

[0097] The following description will take a heterogeneous integrated semiconductor package structure as an example of a cooled component, but the present invention is not limited thereto. Other similar semiconductor package components, such as silicon photonics package components or other advanced package components, may also be applicable to the present invention.

[0098] Please read first Figure 1A , Figure 1AIt is a cross-sectional schematic diagram showing an embodiment of the cooling module 2 of the present invention joined to a heterogeneous integrated semiconductor package structure I; the figure shows that the heterogeneous integrated semiconductor package structure I is arranged on a circuit substrate B, and the cooling module 2 includes a cooling plate P and a nanowire tape T. The cooling plate P can be a water-cooled plate or an air-cooled plate filled with a cooling fluid, or a vapor chamber, or other cooling plates with heat conduction or heat dissipation functions. It should be particularly noted that the cooling fluid can be a refrigerant, pure water, ethylene glycol, propylene glycol or a combination thereof; if the cooling fluid has non-conductive properties, deionized water, electronic fluoride liquid or other electronic engineering fluid can be used. However, the cooling fluid is not limited to liquids, and can also be a low-temperature gas, such as nitrogen, carbon dioxide, helium or hydrogen.

[0099] The nanowire tape T includes an intermediate foil 22, which can be a metal foil or a polyimide film. The metal foil can be made of metals including gold, silver, copper, nickel, etc. The thickness of the metal foil can be between 5μm and 2mm; the thickness of the polyimide (PI) film can be less than 50μm, and the upper and lower surfaces of the film can be pre-coated with a metal layer to facilitate the formation of nanowires. The upper and lower surfaces of the intermediate foil 22 are each provided with a plurality of nanowires nw, whose diameter ranges from 30nm to 4μm, and whose length ranges from 30nm to 4μm.

[0100] In some embodiments, the nanowires nw can be formed by an electroplating process, and the formation method is briefly described as follows: first, two porous films are provided; as a specific example of the porous film manufacturing method, a photoresist can be coated on a substrate and then exposed and developed to form the porous film; then, a porous film is configured on the upper and lower surfaces of the intermediate foil 22, and electrodes are added and placed in an electrolyte for electrochemical reaction, so that the nanowires nw can be grown; finally, the porous films can be removed by etching to complete the nanowire tape T.

[0101] exist Figure 1A In the embodiment, the nanowire tape T is disposed between the cooling plate P and the heterogeneous integrated semiconductor package structure I. Specifically, the cooling plate P has a first surface 211, and the heterogeneous integrated semiconductor package structure I has a second surface 212, and a metal film Lm may be pre-formed at the desired bonding position on the second surface 212 of the heterogeneous integrated semiconductor package structure I, which may be composed of metals such as gold, silver, copper, and nickel. Specifically, the nanowires nw are respectively arranged on two corresponding surfaces of the intermediate foil 22, and before bonding, the nanowires nw are substantially perpendicular to the two corresponding surfaces and extend in the direction toward the first surface 211 and the second surface 212, respectively.

[0102] When the cooling plate P and the heterogeneous integrated semiconductor package structure I are to be bonded, the bonding can be completed by heating the two to between about 170°C and 240°C and providing a bonding pressure of about 10MPa to 30MPa for 120 seconds to 300 seconds. The bonded nanowires nw are bent and stacked on each other due to the compression, and a very good bonding effect can be obtained, for example, the shear strength can reach between 20Mpa and 60MPa. In addition, the bonded nanowires nw will form a very dense bonding structure, which can be used as a sealing interface for fluids; after the helium sealing test, the leakage rate is 9.5×10 -9 mbar×1 / s to 1.0×10 -8 mbar×1 / s.

[0103] See also Figure 1B , which is a cross-sectional schematic diagram showing another embodiment of the present invention in which the cooling module 2 is bonded to the heterogeneous integrated semiconductor package structure 1. Figure 1B In the embodiment, nanowires nw are formed directly on the second surface 212 of the heterogeneous integrated semiconductor package structure I; before bonding, the nanowires nw located on the second surface 212 extend in a direction substantially perpendicular to the second surface 212 and toward the first surface 211.

[0104] In this embodiment, the method for forming the nanowire nw can refer to the above-mentioned electroplating process, but before forming the nanowire nw, a layer of metal film Lm must also be coated, which can be formed by sputtering, chemical vapor deposition (CVD) and electroplating. As for the bonding conditions and related parameters of the cooling plate P and the heterogeneous integrated semiconductor package structure I, refer to the above-mentioned embodiment. In other embodiments, such as Figure 1C In the illustrated embodiment, nanowires nw may also be formed on the first surface 211 of the cooling plate P.

[0105] In addition, see Figure 1D , which is a cross-sectional schematic diagram showing another embodiment of the cooling module 2 of the present invention being bonded to the heterogeneous integrated semiconductor package structure I. Figure 1D In the embodiment shown, both the cooling plate P and the heterogeneous integrated semiconductor package structure I are provided with nanowires nw. That is, nanowires nw are formed on both the first surface 211 and the second surface 212, and the nanowires nw after bonding will form a structure interlocked with each other, which is more compact and has a higher bonding strength.

[0106] Further explanation, this bonding method can even be carried out at room temperature (about 20°C), and the bonding pressure only needs to be 15MPa and last for 60 seconds to complete the bonding, and the shear strength after bonding can reach between 6Mpa and 20MPa. Of course, if the purpose is to obtain higher strength and better sealing, the bonding temperature can be increased to between about 170°C and 240°C, and a bonding pressure of about 15MPa to 60MPa can be provided for 120 seconds to 300 seconds. After the bonding is completed with these parameters, the shear strength can reach between 20Mpa and 65MPa.

[0107] See also Figure 2A , which is a cross-sectional schematic diagram showing an embodiment of the cooling module 2 of the present invention being bonded to a circuit substrate B; Figure 2A In the embodiment shown, the nanowire tape T is disposed between the cooling plate P and the circuit substrate B, and the metal film Lm may be pre-formed at the desired joint on the circuit substrate B. In this embodiment, the cooling plate P covers the entire heterogeneous integrated semiconductor package structure I. When the cooling plate P is filled with cooling fluid, the heterogeneous integrated semiconductor package structure I can be immersed in the cooling fluid, and a relatively good cooling effect can be obtained.

[0108] In particular, the advantage of using the nanowire tape T is that there is no need to pre-form nanowires on the surface of the cooling plate P, the heterogeneous integrated semiconductor packaging structure I or the circuit substrate B at the desired joining location. It is only necessary to configure the nanowire tape T at the desired joining location, and then heat and pressurize the cooling plate P and the circuit substrate B to complete the joining, which simplifies the joining production process and thereby improves efficiency.

[0109] Similarly, if Figure 2B In the embodiment shown, nanowires nw may be formed on the upper surface of the circuit substrate B; or Figure 2C In the embodiment shown in FIG. 1 , nanowires nw can be formed on the lower surface of the cooling plate P. In addition, Figure 2D In the illustrated embodiment, in addition to forming the nanowires nw on the upper surface of the circuit substrate B, the nanowires nw are also formed on the lower surface of the cooling plate P at the same time.

[0110] See also Figure 3A , which is a cross-sectional schematic diagram showing an embodiment of the present invention in which the cooling module 2 is connected to the metal frame Sm. The main difference between this embodiment and the previous embodiment is that the circuit substrate B is provided with a metal frame Sm, which can be a commonly used stiffener or other metal component for reinforcing the strength of the circuit substrate B. Therefore, the metal frame Sm can also be used as a heat conductor or heat sink to further enhance the heat dissipation effect.

[0111] As in the above embodiment, Figure 3AIn the embodiment, the nanowire tape T is disposed between the cooling plate P and the metal frame Sm. Figure 3B In the embodiment shown, nanowires nw may be formed on the upper surface of the metal frame Sm; or Figure 3C In the embodiment shown in FIG. 1 , nanowires nw can be formed on the lower surface of the cooling plate P. In addition, Figure 3D In the illustrated embodiment, in addition to forming the nanowires nw on the upper surface of the metal frame Sm, the nanowires nw are also formed on the lower surface of the cooling plate P at the same time.

[0112] See also Figure 4A , which is a schematic cross-sectional view showing a joint of an embodiment of a cooling module 2 of the present invention. Figure 4A The embodiment shown provides a bonding state of a cooling plate P. As shown in the figure, the cooling module 2 includes a cooling plate P and a bonding interface 21, and the bonding interface 21 includes a plurality of nanowires nw. The cooling plate P includes a first component 23 and a second component 24. The first component 23 is, for example, an upper cover, and the second component 24 is, for example, a base having a microchannel. The first component 23 and the second component 24 are bonded to each other through the bonding interface 21, and the bonding is performed at a temperature below 300°C. To further explain, a bonding temperature below 300°C belongs to a low-temperature manufacturing process; since it is not heated to the melting point of the metal, it will not cause deformation or modification to the microchannel surface or micropores in the cooling plate P.

[0113] In this embodiment, the bonding interface 21 includes a first surface 211, a second surface 212, and a nanowire tape T; wherein the first surface 211 is located on the first component 23, and the second surface 212 is located on the second component 24; the nanowire tape T includes an intermediate foil 22, and the nanowires nw are respectively arranged on two corresponding surfaces of the intermediate foil 22. Before bonding, the nanowires nw extend in directions substantially perpendicular to the two corresponding surfaces and respectively toward the first surface 211 and the second surface 212.

[0114] Similarly, if Figure 4B In the embodiment shown, nanowires nw may be formed on the second member 24; or Figure 4C In the embodiment shown in the figure, nanowires nw can be formed on the lower surface of the first member 23. Figure 4D In the illustrated embodiment, in addition to forming the nanowires nw on the second member 24 , the nanowires nw are also formed on the lower surface of the first member 23 .

[0115] See also Figure 5A, which is a schematic cross-sectional diagram of the pipe connection of an embodiment of the cooling module 2 of the present invention, which specifically presents the connection state of the hollow plate Pb and the fluid pipe Pp. Further explanation, the hollow plate Pb can be a water-cooled plate, which has an internal chamber Pc and an opening Po, and the internal chamber Pc may include a plurality of microchannels. The bonding interface 21 between the hollow plate Pb and the fluid pipe Pp includes a first surface 211, a second surface 212 and nanowires nw; the first surface 211 is located at the opening Po, the second surface 212 is located at one end of the fluid pipe Pp, and the nanowires nw are formed on the first surface 211.

[0116] In other embodiments, the nanowires nw may also be formed on the second surface 212, or the nanowires nw may be formed on both the first surface 211 and the second surface 212. Accordingly, as long as the hollow plate Pb and the fluid pipe Pp are heated to a suitable temperature (below 300°C), the fluid pipe Pp is inserted into the opening Po of the hollow plate Pb, and a suitable bonding pressure (10MPa to 30MPa) is applied for 120 seconds to 300 seconds, the bonding of the two can be completed.

[0117] See also Figure 5B , which shows a cross-sectional schematic diagram of the pipe connection of another embodiment of the cooling module 2 of the present invention. Figure 5A The main difference of the embodiment is that nanowires nw are formed on both the first surface 211 and the second surface 212. Before bonding, the nanowires nw on the first surface 211 extend in a direction toward the second surface 212; and the nanowires nw on the second surface 212 extend in a direction toward the first surface 211. Figure 5B For example, the nanowires nw on the first surface 211 and the nanowires nw on the second surface 212 extend substantially in the horizontal direction. After bonding, the nanowires nw on the first surface 211 and the second surface 212 will form an interlocking sealing structure, thereby achieving a stronger bonding strength and a better sealing effect.

[0118] See also Figure 5C , which is a cross-sectional schematic diagram showing the pipe connection of another embodiment of the cooling module 2 of the present invention. Figure 5C In the embodiment of the present invention, the nanowire tape T is disposed between the first surface 211 of the opening Po and the second surface 212 of one end of the fluid pipe Pp. It can be seen that in some embodiments, when the nanowire tape T is used, it is only necessary to dispose the nanowire tape T at the desired joint, such as between the opening Po of the hollow plate Pb and the joint end of the fluid pipe Pp, and then heat and directly pressurize to complete the joint, which is quite convenient.

[0119] See also Figure 5D, which is a schematic cross-sectional view of a pipe joint of another embodiment of the cooling module 2 of the present invention. Similarly, the nanowire tape T can also be used for joining pipe joints, as long as the joining planes can be closely attached to each other, such as but not limited to the flange structure for joining pipes, and the nanowire tape T can be placed in the flange structure like a double-sided tape, which can provide excellent joining strength and sealing effect.

[0120] Please see Figure 6 , which is a cross-sectional schematic diagram showing a specific application embodiment of the cooling module 2 of the present invention. Further explanation, in some existing graphics processors (GPUs), in order to reduce thermal resistance, a metal cover (lid) is no longer installed. However, in order to protect the processor and prevent the circuit substrate B from warping, a metal frame Sm, or a stiffener, is arranged around the processor instead. However, in, Figure 6 In the illustrated embodiment, the metal frame Sm is fully utilized for heat conduction and heat dissipation.

[0121] In this embodiment, the cooling plate P is a vapor chamber that contacts the metal frame Sm; and the cooling plate P and the metal frame Sm are connected to each other using nanowires nw. In some embodiments, the nanowires nw can be copper with excellent thermal conductivity. Through the characteristics of the nanowire nw connection, the cooling plate P and the metal frame Sm are like a whole, and low thermal resistance and high connection strength can be achieved.

[0122] The temperature spreader has excellent heat conduction capability, which enables the semiconductor package structure with a very concentrated heat density to quickly diffuse the heat to the surroundings, thereby preventing the semiconductor package structure from overheating. Furthermore, the figure also shows a fluid supply module 4, which may include a pump and a fluid delivery pipe. A fluid channel 41 is provided in the metal frame Sm, which is connected to the fluid supply module 4; the fluid supply module 4 is suitable for supplying a cooling fluid to the fluid channel 41. Accordingly, the present embodiment makes full use of the metal frame Sm, and a cooling fluid channel is dug in the metal frame Sm, and then combined with the fluid supply module 4, and through the heat transfer characteristics of the temperature spreader, the heat is directed to the surrounding metal frames Sm, and then taken away by the cooling fluid, while achieving the advantages of rapid heat dissipation and space saving.

[0123] In some embodiments, the fluid supply module 4 may also be further equipped with a liquid storage tank (not shown in the figure) and a heat exchanger (not shown in the figure). The liquid storage tank can store an appropriate amount of cooling fluid to ensure that the cooling fluid supply module 4 can continuously supply cooling fluid to the metal frame Sm; and the heat exchanger can be a fin-type heat exchanger with a fan, which can further dissipate the heat of the circulating cooling fluid; in other embodiments, the heat exchanger can also be a chiller, which can further regulate the temperature of the cooling fluid to a lower temperature.

[0124] See also Figure 7 , which is a cross-sectional schematic diagram showing another specific application embodiment of the cooling module 2 of the present invention. As shown in the figure, the heterogeneous integrated semiconductor package structure I includes a first heating part I1 and a second heating part I2, which can be a small chip (chiplet) respectively. In this embodiment, the thermal design power (Thermal Design Power, TDP) of the first heating part I1 is preset to be greater than the thermal design power of the second heating part I2; that is, in the process of the two small chips (chiplets) operating separately, the temperature of the first heating part I1 will be higher than the temperature of the second heating part I2. In this case, the temperature distribution of the entire packaging structure will be uneven, especially there will be a problem of thermal crosstalk (Thermal Crosstalk), which affects the reliability of the semiconductor packaging structure.

[0125] Another example Figure 7 As shown in , the cooling plate P may include a plurality of fluid supply holes Ps, which correspond to the first heating part I1 and the second heating part I2, respectively. However, in some embodiments, in order to solve the problem of uneven temperature of the semiconductor packaging structure, a jet impingement technology may be used, and further the cooling fluid flow rate of the fluid supply holes Ps to the first heating part I1 is greater than the cooling fluid flow rate to the second heating part I2. Among them, the cooling fluid supplied with a large flow rate can take away more heat than the cooling fluid supplied with a small flow rate, thereby greatly reducing the temperature of the first heating part I1, and maintaining the temperature of the first heating part I1 and the second heating part I2 as consistent as possible.

[0126] As a specific implementation method, Figure 7 As shown in , the cooling plate P is bonded to the circuit substrate B through the nanowires nw, and the excellent sealing properties of the nanowire nw bonding can be used to form a sealed chamber between the cooling plate P and the circuit substrate B. The sealed chamber includes a main fluid chamber P1, a fluid supply chamber P2, a fluid recovery chamber P3, a plurality of fluid supply holes Ps, and a plurality of fluid recovery holes Pr. The first heating portion I1 and the second heating portion I2 are located in the main fluid chamber P1; and the fluid supply holes Ps are provided to connect the main fluid chamber P1 and the fluid supply chamber P2; and the fluid recovery holes Pr are provided to connect the main fluid chamber P1 and the fluid recovery chamber P3. Among them, the configuration density of the fluid supply holes Ps corresponding to the first heating portion I1 is higher than the configuration density of the fluid supply holes Ps corresponding to the second heating portion I2.

[0127] In other words, compared to the second heating part I2, the first heating part I1 with a higher heat dissipation design power can be configured with more and denser jet impact jet holes (fluid supply holes Ps) to improve the heat dissipation efficiency. The specific configuration of the fluid supply holes Ps can be determined by the heat flux (Heat Flux, HF), and the relationship of the heat flux is as follows: Heat Flux (Heat Flux, HF) = Thermal Design Power (Thermal Design Power, TDP) / Surface area of ​​the heating part. For example, the heat flux (HF1) of the first heating part I1 = Thermal Design Power (TDP1) of the first heating part I1 / Surface area of ​​the upper surface of the first heating part I1; similarly, the heat flux (HF2) of the second heating part I2 = Thermal Design Power (TDP2) of the second heating part I2 / Surface area of ​​the upper surface of the second heating part I2. When the heat flux (HF1) of the first heating part I1 is greater than the heat flux (HF2) of the second heating part I2, the configuration density (ρ1) of the fluid supply holes Ps corresponding to the first heating part I1 will be greater than the configuration density (ρ2) of the fluid supply holes Ps corresponding to the second heating part I2.

[0128] Please also see Fig. 8A and Figure 8B , Fig. 8A is a schematic diagram showing another specific application embodiment of the cooling module 2 of the present invention, Figure 8B Yes Display Fig. 8A As shown in the figure, in this embodiment, the cooling module 2 includes a fluid storage unit 31, a fluid supply pipeline 32, a fluid recovery pipeline 33, a liquid supply pump 34 and a gas recovery pump 35. The fluid storage unit 31 stores cooling fluid, and the two ends of the fluid supply pipeline 32 and the fluid recovery pipeline 33 are connected to the fluid storage unit 31 and the cooling plate P respectively.

[0129] In addition, the liquid supply pump 34 is disposed on the fluid supply pipeline 32; the gas recovery pump 35 is disposed on the fluid recovery pipeline 33; wherein the cooling fluid is supplied to the cooling plate P through the liquid supply pump 34 and the fluid supply pipeline 32, and the evaporated cooling fluid is sucked from the cooling plate P through the gas recovery pump 35 and the fluid recovery pipeline 33. Figure 8B As shown, the cooling plate P is bonded to the circuit substrate B through the nanowires nw, and the sealing property of the nanowires nw bonding can be used to form a sealed chamber between the cooling plate P and the circuit substrate B. The sealed chamber includes a liquid chamber 5 and a gas chamber 6, which are connected to each other through a through hole 7.

[0130] Based on the above configuration, when facing the demand of high performance computing (HPC), the temperature of the heterogeneous integrated semiconductor package structure I may rise to a temperature sufficient to evaporate the cooling fluid, resulting in the coexistence of gas phase and liquid phase cooling fluid, such as a two-phase immersion cooling solution. At this time, after the liquid cooling fluid in the liquid chamber 5 is heated and evaporated, the gaseous cooling fluid will flow into the gas chamber 6 through the through hole 7. However, the gas recovery pump 35 of this embodiment can draw gas from the gas chamber 6.

[0131] In general, in this embodiment, the cooling fluid can be continuously supplied to the cooling plate P through the liquid supply pump 34 and the fluid supply pipe 32; and the evaporated cooling fluid can be extracted from the cooling plate P through the gas recovery pump 35 and the fluid recovery pipe 33. In this way, the forced circulation of the two-phase cooling fluid can be achieved to maintain an excellent heat-relieving effect. In addition, in other embodiments, a heat exchanger (not shown) can be additionally arranged on the fluid recovery pipe 33, which can be a fin-type heat exchanger with a fan, which can further dissipate the heat of the gaseous cooling fluid in the circulation and condense it into a liquid cooling fluid.

[0132] On the other hand, after the cooling module 2 has been running for a long time, the flow channel or hole in the cooling plate Ps may become narrower and narrower, or even completely blocked in serious cases, due to various factors such as the failure to clean the shavings after processing the cooling plate P, the precipitation of impurities in the cooling plate P, the impurities in the cooling fluid itself, or the breeding of microorganisms in the microchannel or cooling fluid. This will affect the heat dissipation effect of the cooling plate Ps, causing the system components to overheat or even fail and burn.

[0133] In order to solve the above problem, an embodiment is provided below. Fig. 9 , which is a schematic diagram showing another specific application embodiment of the cooling module 2 of the present invention; Fig. 9 In the embodiment shown, the cooling module 2 includes a cooling plate P, a fluid storage unit 31, a fluid supply pipeline 32, a fluid recovery pipeline 33, a first fluid pump 36 and a second fluid pump 37. Fig. 9 Although not explicitly shown, like the above embodiment, the cooling plate P is also bonded to the circuit substrate B via nanowires (not shown), and the sealing property of the nanowire nw bonding is utilized to form a sealed chamber between the cooling plate P and the circuit substrate B.

[0134] Furthermore, a cooling fluid is stored in the fluid storage unit 31; two ends of the fluid supply pipe 32 are respectively connected to the fluid storage unit 31 and the sealed chamber of the cooling plate P; two ends of the fluid recovery pipe 33 are respectively connected to the fluid storage unit 31 and the sealed chamber of the cooling plate P. The first fluid pump 36 is disposed on the fluid supply pipe 32; the second fluid pump 37 is disposed on the fluid recovery pipe 33. The cooling fluid is supplied to the cooling plate P through the first fluid pump 36 from the fluid supply pipe 32, or the cooling fluid is supplied to the cooling plate P through the second fluid pump 37 from the fluid recovery pipe 33.

[0135] Specifically, when the system is operating normally, the second fluid pump 37 is shut down, and the first fluid pump 36 supplies cooling fluid to the cooling plate P through the fluid supply pipe 32, and the cooling fluid also forms a forced circulation to perform heat dissipation, and the cooling fluid is returned to the fluid storage unit 31 through the fluid recovery pipe 33. On the other hand, when there is a need to flush the internal flow channel or internal holes of the cooling plate Ps, the first fluid pump 36 can be shut down, and the second fluid pump 37 can be driven to operate; that is, the cooling fluid is supplied to the cooling plate P through the fluid recovery pipe 33 through the second fluid pump 37, and the cooling fluid is returned to the fluid storage unit 31 through the fluid supply pipe 32. Accordingly, the second fluid pump 37 will generate a backwash in the opposite direction of the cooling fluid flow in normal operation, which can effectively flush out foreign matter or impurities in the cooling plate Ps or in the pipeline. In other embodiments, filter materials can also be configured in the fluid supply pipe 32 or the fluid recovery pipe 33 to filter out the flushed foreign matter or impurities.

[0136] See also Fig. 10A , which is a cross-sectional schematic diagram showing another specific application embodiment of the cooling module 2 of the present invention. As shown in the figure, the heterogeneous integrated semiconductor package structure I is configured on the upper surface of a circuit substrate B; wherein the first component 23 is configured on the heterogeneous integrated semiconductor package structure I, and the second component 24 is configured on the lower surface of the circuit substrate B. In some embodiments, the first component 23 is a cooling plate P including an internal chamber Pc and a plurality of openings 231, and the second component 24 can be a guide back plate including a plurality of flow channels 242.

[0137] Furthermore, the circuit substrate B includes a plurality of through holes B1, and the second member 24 includes a plurality of protrusions 241, which pass through the through holes B1 and are bonded to the first member 23; wherein the bonding interface 21 between the protrusions 241 of the second member 24 and the first member 23 includes the nanowires nw. In addition, the first member 23 includes an internal chamber Pc and a plurality of openings 231; and the second member 24 includes a plurality of flow channels 242, which extend to the protrusions 241, and are connected to the internal chamber Pc through the openings 231.

[0138] Therefore, through the excellent bonding strength and sealing characteristics of the nanowire nw, in addition to making the first component 23 and the second component 24 firmly bonded, the risk of fluid leakage at the joint can also be significantly reduced. In addition, in this embodiment, the flow path is arranged below the circuit substrate B, which can greatly save space; and when assembling the cooling plate P, the connection of the fluid flow path is also completed at the same time, which is easy to achieve fully automated assembly. In addition, when the nanowire nw is used to achieve bonding, the bonding can be completed by slightly heating and pressurizing the first component 23 and the second component 24, and no additional water path is required, which greatly reduces the use of joints and makes assembly quick and easy.

[0139] See also Fig. 10B , which is a cross-sectional schematic diagram showing another specific application embodiment of the cooling module 2 of the present invention. The main difference between this embodiment and the previous embodiment is that the joint position between the first component 23 and the second component 24 is located at the side edge of the circuit substrate B. Further explanation, as Fig. 10B As described in the figure, the first component 23 includes an internal chamber Pc and a plurality of openings 231, and the second component 24 includes a plurality of protrusions 241 and a plurality of flow channels 242, wherein the protrusions 241 protrude toward the first component 23, and the flow channels 242 extend to the protrusions 241, respectively. The protrusions 241 are joined to the first component 23 along the side edge of the circuit substrate B, and the flow channels 242 of the second component 24 are connected to the internal chamber Pc through the openings 231.

[0140] Although the present invention is disclosed in conjunction with the above embodiments, they are not intended to limit the present invention. Any ordinary technician in the technical field may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the attached claims.

Claims

1. A cooling module for a heterogeneous integrated semiconductor package structure, wherein the heterogeneous integrated semiconductor package structure is disposed on a circuit substrate; the cooling module comprises a cooling plate and a plurality of nanowires, wherein the nanowires are used to connect the cooling plate with the heterogeneous integrated semiconductor package structure, connect the cooling plate with the circuit substrate, or connect the cooling plate with the heterogeneous integrated semiconductor package structure and the circuit substrate. 2 . The cooling module as claimed in claim 1 , further comprising an intermediate foil; wherein the nanowires are respectively arranged on two corresponding surfaces of the intermediate foil.

3. The cooling module according to claim 1, wherein: The cooling plate comprises a first surface, the heterogeneous integrated semiconductor package structure or the circuit substrate comprises a second surface; the nanowires are located on the first surface or the second surface.

4. The cooling module according to claim 1, wherein: The cooling plate comprises a first surface, the heterogeneous integrated semiconductor package structure or the circuit substrate comprises a second surface; the nanowires are located on the first surface and the second surface. 5 . The cooling module as claimed in claim 1 , further comprising a metal film or a metal frame, wherein the metal film or the metal frame is disposed on the circuit substrate.

6. The cooling module according to claim 5, wherein: The cooling plate is a vapor chamber, which contacts the metal frame.

7. The cooling module as claimed in claim 6, further comprising a fluid supply module, wherein a fluid channel is provided in the metal frame, and the fluid channel is connected to the fluid supply module; the fluid supply module is suitable for supplying cooling fluid to the fluid channel.

8. The cooling module according to claim 1, wherein: The heterogeneous integrated semiconductor packaging structure includes a first heat-generating portion and a second heat-generating portion, wherein the heat dissipation design power of the first heat-generating portion is greater than the heat dissipation design power of the second heat-generating portion; the cooling plate includes a plurality of fluid supply holes, which correspond to the first heat-generating portion and the second heat-generating portion respectively; wherein the cooling fluid flow rate sprayed to the first heat-generating portion through the fluid supply holes is greater than the cooling fluid flow rate sprayed to the second heat-generating portion.

9. The cooling module according to claim 8, wherein: The cooling plate also includes a main fluid chamber, a fluid supply chamber, a fluid recovery chamber and a plurality of fluid recovery holes; the first heating portion and the second heating portion are located in the main fluid chamber; the fluid supply holes are connected to the main fluid chamber and the fluid supply chamber; the fluid recovery holes are connected to the main fluid chamber and the fluid recovery chamber; wherein the configuration density of the fluid supply holes corresponding to the first heating portion is higher than the configuration density of the fluid supply holes corresponding to the second heating portion.

10. The cooling module as claimed in claim 1 further comprises a fluid storage unit, a fluid supply pipeline, a fluid recovery pipeline, a liquid supply pump and a gas recovery pump; the fluid storage unit stores cooling fluid; the two ends of the fluid supply pipeline and the fluid recovery pipeline are respectively connected to the fluid storage unit and the cooling plate; the liquid supply pump is arranged on the fluid supply pipeline; the gas recovery pump is arranged on the fluid recovery pipeline; wherein, The cooling fluid is supplied to the cooling plate through the liquid supply pump and the fluid supply pipeline, and the evaporated cooling fluid is sucked from the cooling plate through the gas recovery pump and the fluid recovery pipeline.

11. The cooling module as claimed in claim 1 further comprises a fluid storage unit, a fluid supply pipeline, a fluid recovery pipeline, a first fluid pump and a second fluid pump; the fluid storage unit stores cooling fluid; the two ends of the fluid supply pipeline are respectively connected to the fluid storage unit and the cooling plate; the two ends of the fluid recovery pipeline are respectively connected to the fluid storage unit and the cooling plate; the first fluid pump is arranged on the fluid supply pipeline; the second fluid pump is arranged on the fluid recovery pipeline; wherein, The cooling fluid is supplied to the cooling plate through the fluid supply pipe by the first fluid pump, or the cooling fluid is supplied to the cooling plate through the fluid recovery pipe by the second fluid pump.

12. A cooling module for a heterogeneous integrated semiconductor package structure, comprising: Cooling plate; as well as a bonding interface comprising a plurality of nanowires; The cooling plate includes a first component and a second component, wherein the first component and the second component are bonded to each other via the bonding interface, and the bonding is performed at a temperature lower than 300°C.

13. The cooling module according to claim 12, wherein: The bonding interface further comprises a first surface and a second surface; the first surface is located on the first component, and the second surface is located on the second component; the first surface comprises the nanowires.

14. The cooling module according to claim 13, wherein: The second surface includes the nanowires.

15. The cooling module according to claim 12, wherein: The bonding interface further comprises a first surface, a second surface and an intermediate foil; the first surface is located on the first component, the second surface is located on the second component; the nanowires are respectively arranged on two corresponding surfaces of the intermediate foil.

16. The cooling module according to claim 12, wherein: The first component is a hollow plate, and the second component is a fluid pipeline; the hollow plate includes an inner chamber and an opening, and the fluid pipeline is connected to the opening through the connection interface.

17. The cooling module according to claim 16, wherein: The bonding interface further comprises a first surface, a second surface and an intermediate foil; the first surface is located at the opening, the second surface is located at the end of the fluid pipeline; the nanowires are respectively arranged on two corresponding surfaces of the intermediate foil.

18. The cooling module according to claim 12, wherein: The heterogeneous integrated semiconductor package structure is arranged on the upper surface of the circuit substrate; wherein the first component is arranged on the heterogeneous integrated semiconductor package structure, and the second component is arranged on the lower surface of the circuit substrate.

19. The cooling module according to claim 18, wherein: The second component includes a plurality of protrusions, which protrude toward the first component and are connected to the first component along the side edge of the circuit substrate.

20. The cooling module of claim 18, wherein: The second component includes a plurality of protrusions, and the circuit substrate includes a plurality of through holes; the protrusions of the second component respectively pass through the through holes to be joined to the first component; the first component includes an internal chamber and a plurality of openings; the second component includes a plurality of flow channels, which respectively extend to the protrusions and are connected to the internal chamber through the openings.

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