Surface-emitting semiconductor optical amplifier and use method thereof

Abstract

The invention relates to a surface-emitting semiconductor optical amplifier and a use method thereof, and belongs to the technical field of semiconductor optical amplifiers, and the surface-emitting semiconductor optical amplifier sequentially comprises an N-surface discharge electrode, an N-surface insulating layer, a substrate, an active region, a P-surface insulating layer and a P-surface discharge electrode, dielectric barrier discharge occurs between the N-face discharge electrode and the P-face discharge electrode to break down discharge gas in the discharge cavity to generate a low-temperature plasma electrode, a plurality of leakage holes are evenly distributed in the N-face insulation layer and the P-face insulation layer, and the N-face discharge electrode and the P-face discharge electrode are electrically connected with a driving power source. The technical problems that in the prior art, due to the current crowding effect, a vertical cavity surface emitting semiconductor optical amplifier of an electric pump is limited in clear aperture, limited in amplification capacity and low in output power can be solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optical amplifiers, and in particular relates to a surface-emitting semiconductor optical amplifier and a method for using the same. Background Art

[0002] Compared with traditional edge-emitting semiconductor optical amplifiers, vertical cavity surface-emitting semiconductor optical amplifiers not only have the advantages of small size and light weight, but also have natural advantages such as output circularly symmetrical light spot and easy fiber coupling, and have good application prospects. However, in the existing technology, the vertical cavity surface-emitting semiconductor optical amplifier using electrical pumping has limited light aperture due to the current crowding effect, thus limited amplification capacity and low output power; while the vertical cavity surface-emitting semiconductor optical amplifier using optical pumping requires a complex pumping optical system, which increases the complexity of the system and reduces the overall electro-optical efficiency. Summary of the invention

[0003] In view of the various deficiencies in the prior art, a surface-emitting semiconductor optical amplifier and a method of using the same are proposed to solve the technical problems in the prior art that the electrically pumped vertical cavity surface-emitting semiconductor optical amplifier has limited light aperture, limited amplification capacity and low output power due to the current crowding effect.

[0004] To achieve the above object, the present invention provides the following technical solutions: In a first aspect, the present invention provides a surface-emitting semiconductor optical amplifier, which comprises an N-side discharge electrode, an N-side insulating layer, a substrate, an active region, a P-side insulating layer and a P-side discharge electrode in sequence, wherein a dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode to break down a discharge gas in a discharge cavity to generate a low-temperature plasma electrode, a plurality of leakage holes are evenly distributed on the N-side insulating layer and the P-side insulating layer, and the N-side discharge electrode and the P-side discharge electrode are electrically connected to a driving power supply, respectively.

[0005] The technical solution is further configured such that a window is provided on the side of the plasma electrode away from the substrate.

[0006] The technical solution is further configured such that the N-side discharge electrode is located between the N-side window and the N-side insulating layer, the P-side discharge electrode is located between the P-side window and the P-side insulating layer, and the space between the N-side discharge electrode and the P-side discharge electrode serves as a discharge cavity, which is filled with a discharge gas.

[0007] The technical solution is further configured that the N-side discharge electrode and the P-side discharge electrode are configured as circular rings or square rings, and the inner ring is configured as a sawtooth shape.

[0008] The technical solution is further configured such that the active region is a quantum dot active region or a quantum well active region.

[0009] The technical solution is further configured such that the substrate is a GaAs or GaN substrate.

[0010] The technical solution is further configured such that an N-type DBR is provided between the substrate and the active area, and a P-type DBR is provided between the P-side insulating layer and the active area.

[0011] The technical solution is further configured such that the distribution shape of the plurality of leakage holes is the same as the spot shape of the seed light.

[0012] In a second aspect, the present invention provides a method for using a surface-emitting semiconductor optical amplifier, comprising the following steps: S100, applying a driving voltage between the N-side discharge electrode and the P-side discharge electrode, a dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode to break down the discharge gas near them to generate low-temperature plasma, and under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the middle thereof, forming a full-aperture plasma electrode; S200, the low-temperature plasma contains a large number of freely movable electrons. During the diffusion process, the electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active area, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current; S300, when the seed light passes through the surface emitting semiconductor optical amplifier, the active region generates stimulated radiation under the action of the seed light, and the seed light is output after gain. The technical solution is further configured as follows: in step S300, an N-type DBR is arranged between the substrate and the active area, a P-type DBR is arranged between the P-side insulating layer and the active area, and the seed light is output after multiple reflection gains of the two layers of reflectors, the P-type DBR and the N-type DBR. The beneficial effects of the present invention are: A single power supply driving mode is adopted, that is, one driving power supply generates plasma and provides current for the semiconductor; by setting an N-side insulating layer and a P-side insulating layer between the N-side discharge electrode and the P-side discharge electrode, dielectric barrier discharge is realized to generate a full-aperture plasma electrode; by setting leakage holes on the N-side insulating layer and the P-side insulating layer, current injection in the active area is realized; by setting the leakage hole distribution, the uniformity of the injected current is achieved; the plasma electrode can be diffused to any caliber, so a large caliber can be achieved, and the quality of the output beam can be guaranteed while the output power is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a front view of a surface-emitting semiconductor optical amplifier according to an embodiment of the present invention; Figure 2is a top view of the leakage hole in an embodiment of the present invention; Figure 3 It is a front view of another implementation of the surface-emitting semiconductor optical amplifier in the embodiment of the present invention; Figure 4 is a flow chart of a method for using a surface emitting semiconductor optical amplifier according to an embodiment of the present invention; In the accompanying drawings: 1. N-side insulating layer; 2. substrate; 3. active area; 4. P-side insulating layer; 5. N-side discharge electrode; 6. N-side discharge cavity; 7. P-side discharge electrode; 8. P-side discharge cavity; 9. N-side window; 10. leakage hole; 11. N-type DBR; 12. P-type DBR; 13. P-side window. DETAILED DESCRIPTION

[0014] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention is clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments in this application, other similar embodiments obtained by ordinary technicians in this field without making creative work should all fall within the scope of protection of this application. In addition, the directional words mentioned in the following embodiments, such as "up", "down", "left", "right", etc., are only reference to the directions of the accompanying drawings. Therefore, the directional words used are used to illustrate rather than limit the invention.

[0015] According to an embodiment of the present invention, a surface emitting semiconductor optical amplifier is provided. Figure 1 to Figure 2 , sequentially comprising an N-side discharge electrode 5, an N-side insulating layer 1, a substrate 2, an active region 3, a P-side insulating layer 4 and a P-side discharge electrode 7, a dielectric barrier discharge occurs between the N-side discharge electrode 5 and the P-side discharge electrode 7 to break down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode, a plurality of leakage holes 10 are evenly distributed on the N-side insulating layer 1 and the P-side insulating layer 4, and the N-side discharge electrode 5 and the P-side discharge electrode 7 are electrically connected to a driving power source respectively.

[0016] Specifically, when the surface-emitting semiconductor optical amplifier only includes the N-side discharge electrode 5, the N-side insulating layer 1, the substrate 2, the active region 3, the P-side insulating layer 4 and the P-side discharge electrode 7, the amplifier is a transmission-type traveling wave amplifier, wherein the middle of the N-side discharge electrode 5 is the N-side discharge cavity 6, and the middle of the P-side discharge electrode 7 is the P-side discharge cavity 8.

[0017] It should be noted that a single power supply driving mode is adopted, that is, one driving power supply not only generates plasma but also provides current for the semiconductor; by setting an N-side insulating layer 1 and a P-side insulating layer 4 between the N-side discharge electrode 5 and the P-side discharge electrode 7, a dielectric barrier discharge is realized to generate a full-aperture plasma electrode; by setting leakage holes 10 on the N-side insulating layer 1 and the P-side insulating layer 4, current injection into the active area 3 is realized; by setting the distribution of the leakage holes 10, the uniformity of the injected current is realized; the plasma electrode can be diffused to any caliber, so a large caliber can be achieved, and the quality of the output beam can be guaranteed while improving the output power.

[0018] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2 A window is provided on the side of the plasma electrode away from the substrate 2 .

[0019] It should be noted that the side of the N-side discharge electrode 5 away from the substrate 2 is provided with an N-side window 9 , and the side of the P-side discharge electrode 7 away from the substrate 2 is provided with a P-side window 13 .

[0020] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2 The N-side discharge electrode 5 is located between the N-side window 9 and the N-side insulating layer 1. The N-side window 9, the N-side discharge electrode 5 and the N-side insulating layer 1 together form an N-side discharge cavity 6, that is, the middle of the N-side discharge electrode 5 serves as the N-side discharge cavity 6; the P-side discharge electrode 7 is located between the P-side window 13 and the P-side insulating layer 4. The P-side window 13, the P-side discharge electrode 7 and the P-side insulating layer 4 together form a P-side discharge cavity 8, and the middle of the P-side discharge electrode 7 serves as the P-side discharge cavity 8; the N-side discharge cavity 6 and the P-side discharge cavity 8 are sealed with a discharge gas with a certain pressure.

[0021] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2 The N-side discharge electrode 5 and the P-side discharge electrode 7 are configured as circular rings or square rings, and the inner ring is configured as a sawtooth shape.

[0022] It should be noted that the serrated shape can enhance the electric field near the discharge electrode, making it easier for the discharge gas to be broken down.

[0023] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2 The active region 3 is a quantum dot active region or a quantum well active region. Specifically, the active region 3 is a periodic multiple quantum well structure of InGaAs / GaAsP, GaAs / AlGaAs, InGaAs / GaAs or AlGaN / InGaN.

[0024] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2, the substrate 2 is a GaAs or GaN substrate.

[0025] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figures 1 to 3 An N-type DBR 11 is disposed between the substrate 2 and the active area 3 , and a P-type DBR 12 is disposed between the P-side insulating layer 4 and the active area 3 .

[0026] It should be noted that, compared with the transmission type traveling wave amplifier, the transmission type regenerative amplifier only adds the N-type DBR 11 and the P-type DBR 12, and the rest of the structure is exactly the same.

[0027] In the surface emitting semiconductor optical amplifier of this embodiment, please refer to Figure 1 to Figure 2 The distribution shape of the plurality of leakage holes 10 is the same as the spot shape of the seed light.

[0028] It should be noted that by adjusting the distribution of the leakage holes 10, the current distribution injected into the active area 3 can be regulated, thereby controlling the excitation range of the active area 3 to match the spot distribution of the seed light, such as the leakage holes 10 are distributed in a square area to match the incident square seed light, the leakage holes 10 are distributed in a circular area to match the incident circular seed light, and other arbitrary shapes.

[0029] According to an embodiment of the present invention, a method for using a surface-emitting semiconductor optical amplifier is provided. Figures 1 to 4 , including the following steps: S100, a driving voltage is applied between the N-side discharge electrode 5 and the P-side discharge electrode 7, and a dielectric barrier discharge occurs between the N-side discharge electrode 5 and the P-side discharge electrode 7 to break down the discharge gas near them to generate low-temperature plasma. Under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the middle thereof, forming a full-aperture plasma electrode; S200, the low-temperature plasma contains a large number of freely movable electrons. During the diffusion process, the electrons in the N-side discharge cavity enter the substrate 2 through the leakage holes 10 on the N-side insulating layer 1, flow through the active area 3, and enter the P-side discharge cavity through the leakage holes 10 on the P-side insulating layer 4, forming a loop current; S300, when the seed light passes through the surface emitting semiconductor optical amplifier, the active region 3 generates stimulated radiation under the action of the seed light, and the seed light is output after gain.

[0030] It should be noted that when the plasma encounters the leakage hole 10 during diffusion, because the leakage hole 10 is very small, only a small part of the electrons pass through the leakage hole 10, so it does not affect the diffusion of the low-temperature plasma, and finally forms a full-caliber plasma electrode. The transmittance of the low-temperature plasma to the seed light is close to 100%, and it has a high damage threshold and can withstand high-power and high-energy laser output. The leakage holes 10 are evenly distributed, so the injection current in the active area 3 is evenly distributed, there is no current crowding effect, and a higher quality laser beam can be output. The technical solution is further configured as follows: in step S300, an N-type DBR11 is arranged between the substrate 2 and the active area 3, a P-type DBR12 is arranged between the P-side insulating layer 4 and the active area 3, and the seed light is output after multiple reflection gains of the two layers of reflectors, the P-type DBR12 and the N-type DBR11.

[0031] It should be noted that the reflectivity of the P-type DBR12 and the N-type DBR11 is relatively low and is not sufficient to produce lasing; when the seed light passes through the transmission-type traveling wave amplifier, it is directly output after being amplified by stimulated radiation once; when the seed light passes through the transmission-type regenerative amplifier, the active area 3 undergoes stimulated radiation under the action of the seed light, and is output after multiple reflection gains through the two layers of reflectors of the P-type DBR12 and the N-type DBR11.

[0032] The present invention has been described in detail above. The above description is only a preferred embodiment of the present invention and should not limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made within the scope of this application should still fall within the scope of the present invention.

Claims

1. A surface emitting semiconductor optical amplifier, characterized in that: The invention comprises an N-side discharge electrode, an N-side insulating layer, a substrate, an active area, a P-side insulating layer and a P-side discharge electrode in sequence. A dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode to break down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode. A plurality of leakage holes are evenly distributed on the N-side insulating layer and the P-side insulating layer. The N-side discharge electrode and the P-side discharge electrode are electrically connected to a driving power supply respectively.

2. A surface emitting semiconductor optical amplifier according to claim 1, characterized in that: A window is arranged on a side of the plasma electrode away from the substrate.

3. A surface emitting semiconductor optical amplifier according to claim 2, characterized in that: The N-side discharge electrode is located between the N-side window and the N-side insulating layer, the P-side discharge electrode is located between the P-side window and the P-side insulating layer, and the middle between the N-side discharge electrode and the P-side discharge electrode serves as a discharge cavity filled with a discharge gas.

4. A surface emitting semiconductor optical amplifier according to any one of claims 1 to 3, characterized in that: The N-side discharge electrode and the P-side discharge electrode are configured as circular rings or square rings, and the inner ring is configured as a sawtooth shape.

5. A surface emitting semiconductor optical amplifier according to claim 1, characterized in that: The active region is a quantum dot active region or a quantum well active region.

6. A surface emitting semiconductor optical amplifier according to claim 1, characterized in that: The substrate is a GaAs or GaN substrate.

7. The surface-emitting semiconductor optical amplifier according to claim 1, characterized in that: An N-type DBR is arranged between the substrate and the active area, and a P-type DBR is arranged between the P-side insulating layer and the active area.

8. The surface emitting semiconductor optical amplifier according to claim 1, characterized in that: The distribution shape of the leakage holes is the same as the spot shape of the seed light.

9. A method for using the surface emitting semiconductor optical amplifier according to any one of claims 1 to 8, characterized in that: The following steps are involved: S100, applying a driving voltage between the N-side discharge electrode and the P-side discharge electrode, a dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode to break down the discharge gas near them to generate low-temperature plasma, and under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the middle thereof, forming a full-aperture plasma electrode; S200, the low-temperature plasma contains a large number of freely movable electrons. During the diffusion process, the electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active area, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current; S300, when the seed light passes through the surface emitting semiconductor optical amplifier, the active region generates stimulated radiation under the action of the seed light, and the seed light is output after gain.

10. The method for using a surface-emitting semiconductor optical amplifier according to claim 9, characterized in that: In step S300, an N-type DBR is arranged between the substrate and the active area, a P-type DBR is arranged between the P-side insulating layer and the active area, and the seed light is output after multiple reflections and amplification of the two layers of reflectors, the P-type DBR and the N-type DBR.

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