Semiconductor element with light shielding layer and manufacturing method thereof

Abstract

A semiconductor device having a light shielding layer includes a dielectric layer, a conductive plug penetrating the dielectric layer, a first anode disposed on an upper surface of the dielectric layer and contacting an end of the conductive plug, a light shielding layer embedded in the dielectric layer, and a second anode disposed on an upper surface of the light shielding layer and contacting an end of the conductive plug. Wherein the shading layer is located on one side of the conductive plug, the upper surface of the shading layer is flush with the tail end of the conductive plug, the shading layer comprises titanium nitride, silver, aluminum, silicon nitride, silicon carbide nitride or silicon oxynitride, and a switch element is electrically connected with the conductive plug.

Description

Technical Field

[0001] The invention relates to a semiconductor element with a light shielding layer, in particular to a semiconductor element which utilizes the light shielding layer to shield the light of an organic diode. Background Art

[0002] With the advent of the information society, the display field has been rapidly developed along with the increasing interest in information displays for processing and displaying large amounts of information and the increasing demand for portable information media. Therefore, various thin and light flat panel display devices have been developed. Among the flat panel display devices, an organic light emitting diode display is a self-luminous display and does not require a backlight unit such as a liquid crystal display (LCD) that is not a self-luminous display, and therefore, the organic light emitting diode display is lightweight and has a thin profile.

[0003] In addition, compared with liquid crystal displays, organic light emitting diode displays have advantages in viewing angle, contrast and power consumption. In addition, organic light emitting diode displays can be driven with a low direct current (DC) voltage and can have a fast response speed. Moreover, since the internal components of the organic light emitting diode display are solid, the organic light emitting diode display can resist external impact and has a large operating temperature range. Because the organic light emitting diode display is manufactured by a simple manufacturing process, the manufacturing cost can be reduced compared with the traditional liquid crystal display. However, the light generated in the organic light emitting diode may be unintentionally guided to the signal control unit disposed below the organic light emitting diode, and in particular, the light may affect the active components in the signal control unit. Summary of the invention

[0004] In view of this, the present invention particularly disposes a light shielding layer on one side of the organic light emitting diode to block the light of the organic light emitting diode.

[0005] According to a preferred embodiment of the present invention, a semiconductor element with a light-shielding layer includes a dielectric layer, a conductive plug penetrating the dielectric layer, a first anode arranged on the upper surface of the dielectric layer and the first anode contacts the end of the conductive plug, a light-shielding layer buried in the dielectric layer, wherein the light-shielding layer is located on one side of the conductive plug and the upper surface of the light-shielding layer is flush with the end of the conductive plug, the light-shielding layer includes titanium nitride, silver, aluminum, silicon nitride, silicon carbide or silicon nitride oxide, and a switching element is electrically connected to the conductive plug.

[0006] According to another preferred embodiment of the present invention, a method for manufacturing a semiconductor element with a light-shielding layer includes providing a dielectric layer, then etching the dielectric layer to form a groove, then etching the dielectric layer to form a through-hole, subsequently forming a titanium nitride layer to cover the through-hole and the groove, then forming a tungsten layer to fill the through-hole and the groove, then removing the tungsten layer and the titanium nitride layer outside the groove and the through-hole, and finally forming an anode contacting the tungsten layer and the titanium nitride layer located in the through-hole.

[0007] In order to make the above-mentioned objectives, features and advantages of the present invention more clearly understood, the following is a detailed description of the preferred embodiments and the accompanying drawings. However, the following preferred embodiments and drawings are only for reference and explanation, and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figures 1 to 5 A schematic diagram of a method for manufacturing a semiconductor device with a light shielding layer according to a first preferred embodiment of the present invention;

[0009] Figure 6 A schematic diagram of a variation of a light shielding layer according to another preferred embodiment of the present invention;

[0010] Figures 7 to 9 A schematic diagram of a method for manufacturing a semiconductor device with a light shielding layer according to a second preferred embodiment of the present invention;

[0011] Fig.10 It is a schematic diagram of a semiconductor device with a light shielding layer according to a third preferred embodiment of the present invention.

[0012] Explanation of symbols

[0013] 10: Material layer

[0014] 12a: Conductive pad

[0015] 12b: Conductive pad

[0016] 14: Dielectric layer

[0017] 16: Groove

[0018] 18a: Perforation

[0019] 18b: Perforation

[0020] 20:Titanium nitride layer

[0021] 22: Tungsten layer

[0022] 24: Nitrogen-containing material layer

[0023] 100: Semiconductor element with light shielding layer

[0024] 200:Semiconductor element with light shielding layer

[0025] 300: Semiconductor element with light shielding layer

[0026] 400: Semiconductor element with light shielding layer

[0027] 500:Semiconductor element with light shielding layer

[0028] A1: Anode

[0029] A2: Anode

[0030] C1: cathode

[0031] C2: cathode

[0032] E1: Luminous layer

[0033] E2: Luminous layer

[0034] O1: Organic Light Emitting Diode

[0035] O2: Organic Light Emitting Diode

[0036] P1: Conductive plug

[0037] P2: Conductive plug

[0038] S: Light-shielding layer

[0039] T1: Switching element

[0040] T2: Switching element DETAILED DESCRIPTION

[0041] Figures 1 to 5 A method for manufacturing a semiconductor device with a light shielding layer is illustrated according to a first preferred embodiment of the present invention. Figure 6 This is a variation of the light shielding layer shown in another preferred embodiment of the present invention.

[0042] like Figure 1As shown in the figure, a material layer 10 is provided. The material layer 10 is formed by stacking a semiconductor substrate and a dielectric layer. The semiconductor substrate includes a silicon substrate, a germanium substrate, a gallium arsenide substrate, a silicon germanium substrate, an indium phosphide substrate, a gallium nitride substrate, a silicon carbide substrate or a silicon-covered insulating substrate. The dielectric layer includes insulating materials such as silicon oxide, silicon nitride or silicon oxynitride. Several switch elements and conductive pads are arranged in the material layer 10. For example, the switch element T1 / T2 and the conductive pad 12a / 12b are arranged in the material layer 10. The upper surface of the conductive pad 12a / 12b is cut flush with the upper surface of the material layer 10. Each conductive pad 12a / 12b is electrically connected to a source / drain of a switch element T1 / T2, and then a dielectric layer 14 is formed to cover and contact the material layer 10. Then, the dielectric layer 10 is etched to form at least one trench 16.

[0043] like Figure 2 As shown, a mask (not shown) is formed to cover the trench 16, and then the dielectric layer 14 is etched to form a through hole 18a / 18b penetrating the dielectric layer 14 and exposing the conductive pad 12a / 12b through the through hole 18a / 18b. The through hole 18a / 18b is adjacent to the trench 16, and then the mask is removed. Figure 3 As shown, a titanium nitride layer 20 is formed to conformally cover the sidewalls of the through-holes 18a / 18b and the bottom and sidewalls of the trenches 16, and then a tungsten layer 22 is formed to fill the through-holes 18a / 18b and the trenches 16 and cover the dielectric layer 14. The titanium nitride layer 20 directly contacts the sidewalls of the through-holes 18a / 18b and the bottom and sidewalls of the trenches 16, and the tungsten layer 22 directly contacts the titanium nitride layer 20. The titanium nitride layer 20 and the tungsten layer 22 are formed by sputtering, physical vapor deposition, chemical vapor deposition, or atomic layer deposition.

[0044] like Figure 4 As shown, the tungsten layer 22 and the titanium nitride layer 20 outside the through-hole 18a / 18b and the groove 16 are removed. The removal method can be made by a grinding process. At this time, the tungsten layer 22 and the titanium nitride layer 20 remaining in the through-hole 18a / 18b form a conductive plug P1 / P2. The titanium nitride layer 20 in the through-hole 18a / 18b acts as a buffer layer to prevent tungsten atoms from diffusing from the through-hole 18a / 18b to the dielectric layer 14. In addition, because titanium nitride itself has the property of absorbing light, the titanium nitride layer 20 remaining in the groove 16 can be used as a light-shielding material, and the tungsten layer 22 remaining in the groove 16 is a non-light-shielding material. In this embodiment, the light-shielding layer S includes both the light-shielding material and the non-light-shielding material. However, because the light-shielding material is sufficient to provide a light-shielding effect, the light-shielding layer S still has a light-shielding effect even if it contains a non-light-shielding material. According to another preferred embodiment of the present invention, Figure 6As shown, after removing the tungsten layer 22 and the titanium nitride layer 20 outside the through-holes 18a / 18b and the trenches 16, the grinding process can continue until the tungsten layer 22 in the trenches 16 is completely removed, so that only the titanium nitride layer 20 but no tungsten layer 22 will remain in the trenches 16.

[0045] Figure 5 To continue Figure 4 Steps such as Figure 5 As shown, an anode A1 / A2 is formed on the upper surface of the dielectric layer 14, and the anode A1 / A2 contacts the tungsten layer 22 and the titanium nitride layer 20 located in the through hole 18a / 18b. Specifically, the anode A1 contacts the conductive plug P1, and the anode A2 contacts the conductive plug P2, but the anode A1 / A2 does not contact the tungsten layer 22 and the titanium nitride layer 20 in the groove 16, that is, it does not contact the light shielding layer S. Then, a light-emitting layer E1 / E2 and a cathode C1 / C2 are sequentially formed to cover the anode A1 / A2 respectively. The anode A1, the light-emitting layer E1 and the cathode C1 constitute an organic light-emitting diode O1, and the anode A2, the light-emitting layer E2 and the cathode C2 constitute an organic light-emitting diode O2. The anode A1 / A2 and the cathode C1 / C2 may respectively contain copper, aluminum or tungsten. At this point, the semiconductor device 100 with a light shielding layer of the present invention has been completed. In addition, the number of the conductive plugs P1 / P2 , the organic light emitting diodes O1 / O2 and the light shielding layer S can be adjusted according to different requirements.

[0046] Figures 7 to 9 A method for manufacturing a semiconductor device with a light shielding layer according to a second preferred embodiment of the present invention is illustrated, wherein the components having the same function and position will use the component numbers of the first preferred embodiment.

[0047] Figure 7 To continue Figure 1 Steps such as Figure 7 As shown, a nitrogen-containing material layer 24 is formed to conformably cover the dielectric layer 14 and the trench 16. The nitrogen-containing material layer 24 contacts the sidewall and bottom of the trench 16. The nitrogen-containing material layer 24 includes silicon nitride, silicon carbide, or silicon nitride oxide. Figure 8 As shown, the nitrogen-containing material layer 24 and the dielectric layer 10 are etched to form the through-holes 18a / 18b, and then the titanium nitride layer 20 and the tungsten layer 22 are sequentially formed to cover the through-holes 18a / 18b and the trenches 16. The difference from the first preferred embodiment is that in the second preferred embodiment, the titanium nitride layer 20 in the trenches 16 contacts the nitrogen-containing material layer 24. Fig. 9As shown, the tungsten layer 22, titanium nitride layer 20 and nitrogen-containing material layer 24 outside the trench 16 and the through-hole 18a / 18b are removed. At this time, the tungsten layer 22 and titanium nitride layer 20 in the through-hole 18a / 18b constitute the conductive plug P1 / P2. In addition, the titanium nitride layer 20 and the nitrogen-containing material layer 24 have the property of absorbing light, so the nitrogen-containing material layer 24 and the titanium nitride layer 20 remaining in the trench 16 are used as light shielding materials. Then, the tungsten layer 22 and the titanium nitride layer 20 in the through-hole 18a / 18b are formed. Figure 5 The steps are the same as those of the embodiment of the present invention, and the anode A1 / A2, the light emitting layer E1 / E2 and the cathode C1 / C2 are formed in sequence. Thus, the semiconductor device 200 with the light shielding layer of the present invention is completed.

[0048] Fig.10 A semiconductor device with a light shielding layer according to a third preferred embodiment of the present invention is shown, wherein the components having the same functions and positions will use the component numbers of the first preferred embodiment.

[0049] like Fig.10 As shown, a semiconductor device 300 with a light shielding layer includes a dielectric layer 14, a conductive plug P1 / P2 penetrates the dielectric layer 14, an organic light emitting diode O1 / O2 is arranged on the dielectric layer 14, wherein the organic light emitting diode O1 / O2 is respectively composed of an anode A1 / A2, a light emitting layer E1 / E2 and a cathode C1 / C2, the anode A1 / A2 is arranged on the upper surface of the dielectric layer 14, and the anode A1 contacts one end of the conductive plug P1, and the anode A2 contacts the end of the conductive plug P2, and a light shielding layer S is buried in the dielectric layer 14, wherein the light shielding layer S is located on one side of the conductive plug P1 / P2 and shields the light. The upper surface of the layer S is flush with the end of the conductive plug P1 / P2, and the entire light shielding layer S is completely located below the anode A1 / A2. In this embodiment, the light shielding layer S does not contact the anode A1 / A2, nor does it overlap with the anode A1 / A2, and the light shielding layer S does not contact any conductive plug. The light shielding layer S includes titanium nitride, silver, aluminum, silicon nitride, silicon carbide nitride or silicon oxynitride. The light shielding layer S is floating, that is, it is not electrically connected to the outside at all. In detail, the light shielding layer S includes a groove 16 and a light shielding material filled in the groove 16. Depending on the manufacturing process, the light shielding layer S may also include a non-light shielding material. The light shielding material may be composed of any one or more of titanium nitride, silver, aluminum, silicon nitride, silicon carbide nitride and silicon oxynitride. For example, Figure 5 As shown, the light shielding material in the light shielding layer S is a titanium nitride layer 20. Since the light shielding layer S and the conductive plugs P1 / P2 are made using the same manufacturing process, there is a non-light shielding material, that is, a tungsten layer 22, on the light shielding material. Figure 6 As shown, the light shielding material in the light shielding layer S is a titanium nitride layer. Because the tungsten layer 22 in the groove 16 is completely removed during grinding, Figure 6 The light shielding layer S in the embodiment only contains light shielding material, that is, titanium nitride layer. Fig. 9 As shown, the light shielding material in the light shielding layer S is a nitrogen-containing material layer 24 and a titanium nitride layer 20. The nitrogen-containing material layer 24 contacts the groove 16. The titanium nitride layer 20 and the tungsten layer 22 are surrounded by the nitrogen-containing material layer 24. The nitrogen-containing material layer 24 includes silicon nitride, silicon carbide nitride or silicon oxynitride. In short, the light shielding layer S must contain at least one light shielding material, and the non-light shielding material is selectively set. The position of the light shielding material in the groove 16 can be adjusted according to needs.

[0050] Please refer again Fig.10 A conductive pad 12a / 12b in the semiconductor element 300 with a light shielding layer contacts the other end of the conductive plug P1 / P2. The conductive pad 12a / 12b is electrically connected to a source / drain of each of the switch elements T1 / T2 so that the switch elements T1 / T2 can control the organic light emitting diodes O1 / O2 respectively. The conductive plugs P1 / P2 respectively include a through hole 18a / 18b, a titanium nitride layer 20 and a tungsten layer 22. The titanium nitride layer 20 contacts the sidewall of the through hole 18a / 18b. Since titanium nitride, silicon nitride, silicon carbide nitride and silicon oxynitride have the property of absorbing light, and silver and aluminum have the property of reflecting light, when the light shielding layer S has any one or more of titanium nitride, silver, aluminum, silicon nitride, silicon carbide nitride and silicon oxynitride, the light shielding layer S has the function of reflecting or absorbing light. The present invention deliberately sets the light shielding layer S between the organic light emitting diodes O1 / O2, so as to block or reflect the light of the organic light emitting diodes O1 / O2, prevent the light of the organic light emitting diodes O1 / O2 from entering the components in the material layer 10, and reduce the problem of the performance of the components being affected by the light.

[0051] Please continue reading Fig.10 The difference between the semiconductor element 400 with a light shielding layer and the semiconductor element 300 with a light shielding layer is that one side of the light shielding layer S of the semiconductor element 400 with a light shielding layer contacts the anode A1 and overlaps with the anode A1, but the other side does not contact the anode B2. In addition, the light shielding layer S of the semiconductor element 500 with a light shielding layer contacts the anode A1 and the anode A2 on both sides and overlaps with the anode A1 / A2. To prevent the anode A1 and the anode A2 from being turned on, the portion of the light shielding layer S that contacts the anode A1 and the anode A2 needs to use a non-conductor, such as silicon nitride, silicon carbide or silicon oxynitride in the light shielding material, but the portion that does not contact the anode A1 and the anode A2 can be selected from all possible light shielding materials, and since the portion that contacts the anode A1 and the anode A2 has already used the light shielding material, the portion that does not contact the anode A1 and the anode A2 can also use a non-light shielding material, such as tungsten or copper.

[0052] The above descriptions are only preferred embodiments of the present invention. All equivalent changes and modifications made according to the claims of the present invention should fall within the scope of the present invention.

Claims

1. A semiconductor device having a light shielding layer, comprising: Dielectric layer; a conductive plug penetrating the dielectric layer; a first anode disposed on the upper surface of the dielectric layer and contacting a terminal end of the conductive plug; a light shielding layer buried in the dielectric layer, wherein the light shielding layer is located on one side of the conductive plug and an upper surface of the light shielding layer is flush with the end of the conductive plug, and the light shielding layer comprises titanium nitride, silver, aluminum, silicon nitride, silicon carbide or silicon nitride oxide; and A switch element is electrically connected to the conductive plug. 2 . The semiconductor device with a light shielding layer as claimed in claim 1 , wherein all of the light shielding layer is located below the first anode.

3. The semiconductor device having a light shielding layer according to claim 1, further comprising: A light-emitting layer covering the first anode; The cathode is arranged on the light-emitting layer, wherein the first anode, the light-emitting layer and the cathode constitute an organic light-emitting diode. 4 . The semiconductor device with a light shielding layer as claimed in claim 1 , wherein the light shielding layer comprises titanium nitride, silver or aluminum, and the light shielding layer does not contact the first anode and does not overlap with the first anode. 5 . The semiconductor device with a light shielding layer as claimed in claim 1 , wherein the light shielding layer comprises silicon nitride, silicon carbide nitride or silicon oxynitride, and the light shielding layer contacts the first anode and overlaps the first anode.

6. The semiconductor device with a light shielding layer as claimed in claim 1, wherein the light shielding layer comprises: Grooves; a titanium nitride layer contacting a bottom and sidewalls of the trench; and A tungsten layer fills the trench.

7. The semiconductor device with a light shielding layer as claimed in claim 6, wherein the conductive plug comprises: Perforating, penetrating the dielectric layer; The titanium nitride layer contacts a sidewall of the through hole; and The tungsten layer fills the through hole.

8. The semiconductor device having a light shielding layer according to claim 1, further comprising: The conductive pad contacts the other end of the conductive plug, wherein the conductive pad is electrically connected to a source / drain of the switch element.

9. The semiconductor device with a light shielding layer as claimed in claim 1, wherein the light shielding layer comprises: Grooves; a silicon nitride layer contacting a bottom and sidewalls of the trench; a tungsten layer filling the trench; as well as The titanium nitride layer is disposed between the silicon nitride layer and the tungsten layer. 10 . The semiconductor device with a light shielding layer as claimed in claim 9 , wherein the silicon nitride layer in the light shielding layer contacts the first anode and overlaps with the first anode. 11 . The semiconductor device with a light shielding layer as claimed in claim 1 , wherein the light shielding layer is floating. 12 . The semiconductor device with a light shielding layer as claimed in claim 1 , further comprising a second anode disposed on an upper surface of the dielectric layer, the second anode being adjacent to the first anode, wherein the light shielding layer contacts the first anode and the second anode.

13. The semiconductor device with a light shielding layer as claimed in claim 1, further comprising a second anode disposed on the upper surface of the dielectric layer, the second anode being adjacent to the first anode, wherein the light shielding layer only contacts the first anode but does not contact the second anode.

14. A method for manufacturing a semiconductor device having a light shielding layer, comprising: providing a dielectric layer; etching the dielectric layer to form trenches; etching the dielectric layer to form a through hole; forming a titanium nitride layer to cover the through hole and the trench; forming a tungsten layer to fill the through hole and the trench; removing the tungsten layer and the titanium nitride layer outside the trench and the through hole; as well as An anode is formed contacting the tungsten layer and the titanium nitride layer in the through hole. 15 . The method for manufacturing a semiconductor device with a light shielding layer as claimed in claim 14 , further comprising forming a silicon nitride layer to cover the dielectric layer and the trench before forming the through hole. 16 . The method for manufacturing a semiconductor device with a light shielding layer as claimed in claim 15 , wherein when forming the through hole, the silicon nitride layer is etched first and then the dielectric layer is etched. 17 . The method for manufacturing a semiconductor device with a light shielding layer as claimed in claim 15 , wherein the titanium nitride layer covers the silicon nitride layer.

18. The method for manufacturing a semiconductor device having a light shielding layer according to claim 15, further comprising: forming a light-emitting layer covering the first anode; and A cathode is formed and disposed on the light emitting layer, wherein the first anode, the light emitting layer and the cathode constitute an organic light emitting diode.

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