Continuous synthesis device and method based on silicon carbide powder

Abstract

The present invention provides a continuous synthesis device and method based on silicon carbide powder, belonging to the technical field of silicon carbide synthesis equipment. The continuous synthesis device based on silicon carbide powder includes a reaction furnace, a sealing structure, and a conveying assembly. The reaction furnace has a plurality of chambers arranged in sequence along the horizontal direction, and a communication port is provided between any two adjacent chambers. It is set that each chamber is successively a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber, and a discharging chamber. There are a plurality of sealing structures, and each sealing structure corresponds to each communication port one by one. There are a plurality of conveying assemblies, and each conveying assembly is arranged at the bottom of each chamber and can convey a crucible filled with a carbon-silicon mixture. The continuous synthesis device based on silicon carbide powder provided by the present invention can continuously load the crucible into the feeding chamber, realize continuous silicon carbide powder synthesis operation, improve the output, and improve the production efficiency, and has strong practicability.

Description

Technical Field

[0001] The present invention belongs to the technical field of silicon carbide synthesis equipment, and particularly relates to a continuous synthesis device and method based on silicon carbide powder materials. Background Art

[0002] Silicon carbide is an important compound semiconductor material with many unique physical and chemical properties, and is widely used in the fields of electronics, optics, machinery, aerospace, etc.

[0003] In the prior art, with the gradual maturity and industrialization of the silicon carbide crystal growth process, the improved self-propagating high-temperature synthesis method is generally used in industrial production to synthesize silicon carbide powder materials. This production method has a low single batch feeding amount and cannot be continuously produced. The low output of high-purity silicon carbide powder materials has gradually become an obstacle restricting the industrialization of silicon carbide and is difficult to meet the demand for rapid industrial expansion. Summary of the Invention

[0004] An embodiment of the present invention provides a continuous synthesis device and method based on silicon carbide powder materials, aiming to solve the problem of poor practicability caused by the inability to achieve continuous production and low output of existing silicon carbide.

[0005] To achieve the above object, the technical solution adopted by the present invention is: to provide a continuous synthesis device based on silicon carbide powder materials, including:

[0006] A reaction furnace having a plurality of chambers arranged in sequence along the horizontal direction, and a communication port is provided between any two adjacent chambers; each of the chambers is set as a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber, and a discharging chamber in sequence;

[0007] A plurality of sealing structures, each of the sealing structures corresponding to each of the communication ports one by one;

[0008] A plurality of conveying components, each of the conveying components is arranged at the bottom of each of the chambers, and is used for conveying a crucible containing a carbon-silicon mixture.

[0009] In a possible implementation manner, each of the sealing structures includes a chamber door slidably arranged on the reaction furnace along the vertical direction.

[0010] In a possible implementation manner, a plurality of sealing doors corresponding to each of the chambers are provided on the reaction furnace.

[0011] In a possible implementation manner, the arrangement direction of each of the chambers is set as a first direction, and the horizontal direction perpendicular to the first direction is set as a second direction; each of the conveying components includes:

[0012] The first rotating shafts are provided in plurality, and the first rotating shafts are arranged in parallel and at intervals along the first direction, and each first rotating shaft is arranged on one side of the reaction furnace along the second direction; each first rotating shaft is rotatably arranged on the reaction furnace, and one end extends into the corresponding chamber; the outer end of each first rotating shaft is power-connected to a first driving component;

[0013] The second rotating shafts are provided in plurality, and the first rotating shafts are arranged on the other side of the reaction furnace along the second direction, and each second rotating shaft corresponds to one of the first rotating shafts coaxially; the outer end of the second rotating shaft arranged closer to the feeding bin is power-connected to a second driving component;

[0014] The rotating drum is located in the corresponding chamber, and both ends are rotatably connected to the corresponding first rotating shaft and the second rotating shaft through one-way bearings.

[0015] In a possible implementation manner, the rotating drum is made of high-temperature resistant ceramic material.

[0016] In a possible implementation manner, the height where the top end of each rotating drum is located is higher than the height where the bottom end of each communication port is located.

[0017] In a possible implementation manner, the first driving component includes:

[0018] A first driver, power-connected to one of the first rotating shafts;

[0019] A plurality of chain drive structures are provided, and any two adjacent first rotating shafts are power-connected through a group of chain drive structures.

[0020] In a possible implementation manner, the second driving component includes a second driver.

[0021] The present invention also provides a continuous synthesis method based on silicon carbide powder, adopting the above-mentioned continuous synthesis device based on silicon carbide powder; the continuous synthesis method based on silicon carbide powder includes the following steps:

[0022] Feeding and preheating: Put the crucible filled with carbon-silicon mixture into the feeding bin, and send the crucible filled with carbon-silicon mixture into the vacuum chamber through the conveying component, and perform preheating;

[0023] Front-end material transition transfer and reaction: Adjust the internal environment of the first transition chamber to be the same as that of the vacuum chamber, and open the sealing structure between the vacuum chamber and the first transition chamber, and send the crucible filled with carbon-silicon mixture into the first transition chamber through the conveying component; then change the internal environment of the first transition chamber to be the same as that of the first reaction chamber, and after opening the sealing structure between the first transition chamber and the first reaction chamber, send the crucible filled with carbon-silicon mixture into the first reaction chamber through the conveying component;

[0024] The backend materials are transferred and reacted transitively, the internal environment of the second transition bin is adjusted to be the same as that of the first reaction bin, the sealing structure between the second transition bin and the first reaction bin is opened, and the crucible containing the carbon-silicon mixture is sent into the second transition bin through the conveying assembly; subsequently, the internal environment of the second transition bin is changed to be the same as that of the second reaction bin, after the sealing structure between the second transition bin and the second reaction bin is opened, the crucible containing the carbon-silicon mixture is sent into the second reaction bin through the conveying assembly;

[0025] Cooling and discharging, the internal environment of the third transition bin is adjusted to be the same as that of the second reaction bin, the sealing structure between the third transition bin and the second reaction bin is opened, and the crucible containing the carbon-silicon mixture is sent into the third transition bin through the conveying assembly; subsequently, the internal environment of the third transition bin is changed to be the same as that of the cooling bin, the sealing structure between the cooling bin and the third transition bin is opened, and the crucible containing the carbon-silicon mixture is sent into the cooling bin; subsequently, it is transferred to the storage bin.

[0026] In the continuous synthesis device based on silicon carbide powder provided by this implementation method, the chambers set in the reaction furnace sequentially form a feeding bin, a vacuum bin, a first transition bin, a first reaction bin, a second transition bin, a second reaction bin, a third transition bin, a cooling bin, and a discharging bin, and the on-off between the chambers is realized through a sealing structure, thereby ensuring the effective operation of each chamber. At the same time, it can also ensure that the conveying assembly conveys the crucible containing the carbon-silicon mixture, and then the crucible can be continuously loaded into the feeding bin, realizing the continuous synthesis action of silicon carbide powder, improving the output, and improving the production efficiency, with strong practicability. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of the continuous synthesis device based on silicon carbide powder provided by an embodiment of the present invention;

[0028] Figure 2 It is a schematic enlarged structural diagram at A of the continuous synthesis device based on silicon carbide powder provided by an embodiment of the present invention;

[0029] Figure 3 It is a schematic structural diagram of the conveying assembly of the continuous synthesis device based on silicon carbide powder provided by an embodiment of the present invention;

[0030] Figure 4 It is a flowchart of the continuous synthesis method based on silicon carbide powder provided by an embodiment of the present invention;

[0031] Description of the Reference Numerals:

[0032] 10. Reaction furnace; 11. Feeding bin; 12. Vacuum bin; 13. First transition bin; 14. First reaction bin; 15. Second transition bin; 16. Second reaction bin; 17. Third transition bin; 18. Cooling bin; 19. Discharge bin;

[0033] 20. Sealing structure; 21. Bin door; 22. Telescopic structure;

[0034] 30. Conveying assembly; 31. First rotating shaft; 32. Second rotating shaft; 33. Rotary drum; 34. One-way bearing; 35. First driving component; 351. First driver; 352. Chain drive structure; 36. Second driver;

[0035] 40. Sealing door. Detailed implementation manners

[0036] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0037] Please refer to Figure 1 and Figure 2 simultaneously, and a continuous synthesis device based on silicon carbide powder provided by the present invention will be described. The continuous synthesis device based on silicon carbide powder includes a reaction furnace 10, a sealing structure 20 and a conveying assembly 30. The reaction furnace 10 has a plurality of chambers arranged in sequence along the horizontal direction, and communication ports are provided between any two adjacent chambers. It is set that each chamber is in sequence a feeding bin 11, a vacuum bin 12, a first transition bin 13, a first reaction bin 14, a second transition bin 15, a second reaction bin 16, a third transition bin 17, a cooling bin 18 and a discharge bin 19. A plurality of sealing structures 20 are provided, and each sealing structure 20 corresponds to each communication port one by one. A plurality of conveying assemblies 30 are provided, and each conveying assembly 30 is arranged at the bottom of each chamber and can convey a crucible filled with a carbon-silicon mixture.

[0038] Compared with the prior art, the continuous synthesis device based on silicon carbide powder provided in this embodiment forms a feeding bin 11, a vacuum bin 12, a first transition bin 13, a first reaction bin 14, a second transition bin 15, a second reaction bin 16, a third transition bin 17, a cooling bin 18 and a discharge bin 19 in sequence in the reaction furnace 10, and the on-off between each chamber is realized through the sealing structure 20, thereby ensuring the effective operation of each chamber. At the same time, it can also ensure that the conveying assembly 30 conveys the crucible filled with the carbon-silicon mixture, and then the crucible can be continuously loaded into the feeding bin 11, realizing the continuous synthesis action of silicon carbide powder, improving the output and production efficiency, and having strong practicability.

[0039] In this embodiment, the chambers are arranged horizontally, which can reduce the work done by each conveying component 30. In addition, each chamber is correspondingly provided with a temperature control module, a pressure control module, a gas control module, etc., to ensure the regulation of the internal environment such as the temperature, pressure, and atmosphere type in the chamber. This technology is the prior art and is well-known to those skilled in the art, so it will not be elaborated here.

[0040] The crucible can be continuously loaded into the feeding bin 11, realizing continuous powder synthesis operation, thereby realizing continuous synthesis of silicon carbide powder and improving production efficiency.

[0041] In some embodiments, the above-mentioned sealing structure 20 can adopt the structure as Figure 2 shown. Refer to Figure 2 , each sealing structure 20 includes a chamber door 21 slidably arranged on the reaction furnace 10 along the vertical direction. The chamber door 21 can control the on-off between two adjacent chambers. When connected, it allows the crucible filled with carbon-silicon mixture to pass through, and when disconnected, it can ensure that the two adjacent chambers do not interfere with each other.

[0042] In this embodiment, a communication port is provided on the side wall between two adjacent chambers. The communication port can be a rectangular port. Correspondingly, a sliding cavity with an open top is provided in the side wall, and the chamber door 21 can be slidably connected to the sliding cavity. At the same time, in order to ensure the automatic opening and closing of the chamber door 21, the sealing structure 20 may further include a telescopic structure 22. The telescopic structure 22 is fixedly arranged on the reaction furnace 10 and is connected to the chamber door 21 to drive the chamber door 21 to lift and slide. A plurality of telescopic structures 22 can be provided, which are respectively distributed on both sides of the reaction furnace 10 along the direction perpendicular to the interval direction of each chamber, and the telescopic structure 22 can be a hydraulic cylinder.

[0043] In some embodiments, the above-mentioned reaction furnace 10 can adopt the structure as Figure 1 shown. Refer to Figure 1 , a plurality of sealing doors 40 corresponding to each chamber are provided on the reaction furnace 10. The sealing doors 40 can ensure the opening of each chamber, thereby ensuring the maintenance of each chamber.

[0044] It should be noted that the sealing doors 40 corresponding to the feeding bin 11 and the discharging bin 19 can be hinged for easy opening and closing, and thus facilitating the feeding and discharging effects. While the sealing doors 40 corresponding to other chambers can be bolt-connected.

[0045] In some embodiments, the above-mentioned chambers can adopt the structure as Figure 1 shown. Refer to Figure 1, the lengths of the first transition chamber 13, the second transition chamber 15, and the third transition chamber 17 are all smaller than those of the first reaction chamber 14, the second reaction chamber 16, and the cooling chamber 18. This involves a relatively long residence time in the first reaction chamber 14, the second reaction chamber 16, and the cooling chamber 18. This structure can ensure continuous feeding and thus ensure continuous transfer production.

[0046] In some embodiments, the above-mentioned conveying assembly 30 can adopt the structure as Figure 3 shown. Refer to Figure 3 , set the arrangement direction of each chamber as the first direction, and the horizontal direction perpendicular to the first direction as the second direction. Each conveying assembly 30 includes a first rotating shaft 31, a second rotating shaft 32, a first driving member 35, a second driving member, and a rotating cylinder 33. There are multiple first rotating shafts 31, and the first rotating shafts 31 are arranged parallel and spaced along the first direction, and each first rotating shaft 31 is arranged on one side of the reaction furnace 10 along the second direction. Each first rotating shaft 31 is rotatably arranged on the reaction furnace 10, and one end extends into the corresponding chamber. The outer end of each first rotating shaft 31 is power-connected to a first driving member 35. There are multiple second rotating shafts 32, and the first rotating shafts 31 are arranged on the other side of the reaction furnace 10 along the second direction, and each second rotating shaft 32 corresponds to each first rotating shaft 31 coaxially one by one. The outer end of the second rotating shaft 32 arranged on the side close to the feeding bin 11 is power-connected to a second driving member. The rotating cylinder 33 is located in the corresponding chamber, and both ends are rotatably connected to the corresponding first rotating shaft 31 and second rotating shaft 32 through one-way bearings 34.

[0047] It is involved that at least one crucible can be placed in each chamber, and the residence time of the crucibles in each chamber is different. Therefore, during the transfer of the crucibles from the chamber with a short residence time to the chamber with a long residence time, the first driving member 35 can be driven to drive each first rotating shaft 31 to rotate, and then the rotating cylinder 33 can be rotated to convey the crucibles in this chamber forward and leave the position of the entrance (the communication port with the previous chamber). Subsequently, the sealing structure 20 is opened, and the conveying structure in the previous chamber conveys the crucibles forward and passes through the entrance of this chamber. It is involved that the rotating cylinder 33 is rotatably connected to the first rotating shaft 31 and the second rotating shaft 32 through one-way bearings 34, and the rotating cylinder 33 can rotate forward after receiving the crucibles to ensure the conveyance of the crucibles. When the crucibles are separated from the conveying assembly 30 in the previous chamber, the second driving member in this chamber is opened, and the corresponding rotating cylinder 33 is driven to rotate through the second rotating shaft 32 at the entrance of this chamber to provide power for the crucibles to be conveyed forward, so that the crucibles in the previous chamber enter this chamber.

[0048] In addition, the setting of the one-way bearings 34 can also prevent the crucibles in the previous chamber from colliding or toppling with the crucibles in this chamber during the process of entering this chamber. The one-way bearings 34 can be made of high-temperature resistant materials.

[0049] Of course, it should be noted that during the process of transferring the crucible from this chamber to the next chamber, the first driving component 35 is required to move the crucible in this chamber simultaneously.

[0050] In this embodiment, the number of the second rotating shafts 32 connected to the second driving component is at least one. When the number of the connected second rotating shafts 32 is greater than or equal to two, chain drive can be adopted.

[0051] In some embodiments, the above-mentioned rotating drum 33 can adopt the structure as Figure 3 shown. Refer to Figure 3 . The rotating drum 33 is made of high-temperature resistant ceramic material, which can effectively cope with high-temperature environment, thus ensuring the stability of conveying.

[0052] In some embodiments, the above-mentioned rotating drum 33 can adopt the structure as Figure 2 shown. Refer to Figure 2 . The height of the top end of each rotating drum 33 is higher than the height of the bottom end of each communication port, so as to avoid interference between the crucible and the bottom end of the communication port during the transfer process of the crucible between two chambers, thus ensuring the stability of crucible conveying.

[0053] In some embodiments, the above-mentioned first driving structure can adopt the structure as Figure 3 shown. Refer to Figure 3 . The first driving structure includes a first driver 351 and a chain drive structure 352. The first driver 351 is power-connected to one of the first rotating shafts 31. There are multiple groups of chain drive structures 352, and any two adjacent first rotating shafts 31 are power-connected through a group of chain drive structures 352.

[0054] The first driver 351 can be a stepping motor, or a combination of a driving motor and a speed reducer. A chain drive structure 352 is arranged between any two adjacent first rotating shafts 31, that is, sprockets are connected to the two adjacent first rotating shafts 31, and they are power-connected through a transmission chain at the same time. This structure can ensure the synchronous rotation of each first rotating shaft 31 and the stability of transmission, thus ensuring the stable transmission of the crucible.

[0055] In some embodiments, the above-mentioned second driver 36 can adopt the structure as Figure 3 shown. Refer to Figure 3 . The second driving structure includes a second driver 36.

[0056] The second driver 36 can be a stepping motor, or a combination of a driving motor and a speed reducer.

[0057] Based on the same inventive concept, refer to Figure 4, the embodiment of the present application further provides a continuous synthesis method based on silicon carbide powder, using the above-mentioned continuous synthesis device based on silicon carbide powder.

[0058] The continuous synthesis method based on silicon carbide powder includes the following steps:

[0059] S100: Feeding and preheating. Place the crucible containing the carbon-silicon mixture into the feeding bin 11, and send the crucible containing the carbon-silicon mixture into the vacuum bin 12 through the conveying component 30 for preheating.

[0060] S200: Front-end material transition transfer and reaction. Adjust the internal environment of the first transition bin 13 to be the same as that of the vacuum bin 12, and open the sealing structure 20 between the vacuum bin 12 and the first transition bin 13. Send the crucible containing the carbon-silicon mixture into the first transition bin 13 through the conveying component 30. Then change the internal environment of the first transition bin 13 to be the same as that of the first reaction bin 14. After opening the sealing structure 20 between the first transition bin 13 and the first reaction bin 14, send the crucible containing the carbon-silicon mixture into the first reaction bin 14 through the conveying component 30.

[0061] S300: Back-end material transition transfer and reaction. Adjust the internal environment of the second transition bin 15 to be the same as that of the first reaction bin 14, and open the sealing structure 20 between the second transition bin 15 and the first reaction bin 14. Send the crucible containing the carbon-silicon mixture into the second transition bin 15 through the conveying component 30. Then change the internal environment of the second transition bin 15 to be the same as that of the second reaction bin 16. After opening the sealing structure 20 between the second transition bin 15 and the second reaction bin 16, send the crucible containing the carbon-silicon mixture into the second reaction bin 16 through the conveying component 30.

[0062] S400: Cooling and discharging. Adjust the internal environment of the third transition bin 17 to be the same as that of the second reaction bin 16, and open the sealing structure 20 between the third transition bin 17 and the second reaction bin 16. Send the crucible containing the carbon-silicon mixture into the third transition bin 17 through the conveying component 30. Then change the internal environment of the third transition bin 17 to be the same as that of the cooling bin 18, and open the sealing structure 20 between the cooling bin 18 and the third transition bin 17. Send the crucible containing the carbon-silicon mixture into the cooling bin 18 through the conveying component 30. Then transfer it to the storage bin.

[0063] The continuous synthesis method based on silicon carbide powder provided in this embodiment, compared with the prior art, in the front-end material transition transfer and reaction steps, through the first transition bin 13, its internal environment can be adjusted to be the same as that of the vacuum bin 12 or the first reaction bin 14 respectively. Furthermore, it can ensure that the crucible in the vacuum bin 12 is transferred to the first reaction bin 14 without affecting or damaging the growth environment in the first reaction bin 14. In the back-end material transition transfer and reaction steps, through the second transition bin 15, its internal environment can be adjusted to be the same as that of the first reaction bin 14 or the second reaction bin 16 respectively. Furthermore, it can ensure that the crucible in the first reaction bin 14 is transferred to the second reaction bin 16 without affecting or damaging the growth environments in the first reaction bin 14 and the second reaction bin 16. In the cooling and discharging step, through the third transition bin 17, its internal environment can be adjusted to be the same as that of the second reaction bin 16 or the cooling bin 18 respectively. Furthermore, it can ensure that the crucible in the second reaction bin 16 is transferred to the cooling bin 18 without affecting or damaging the growth environment in the second reaction bin 16. The first reaction bin is the high-pressure reaction stage of the material, with the pressure controlled at 30 - 60 kPa and the temperature controlled at 1800 - 2000 °C to make the material react fully; the second reaction bin is the low-pressure recrystallization stage of the material, with the pressure controlled at 1 - 10 kPa and the temperature controlled at 2000 - 2200 °C to make the material form the required particles.

[0064] In addition, in this embodiment, regarding the vacuum bin 12 and the cooling bin 18, the main function of the vacuum bin is to remove the air in the material, and the main function of the cooling bin is to reduce the temperature.

[0065] As the specific implementation steps of this embodiment:

[0066] First, all the sealing structures 20 and the sealing doors 40 are in the closed state.

[0067] Open the sealing door 40 corresponding to the feeding bin 11, put the crucible containing the carbon-silicon mixture into the feeding bin 11, close the sealing door 40 of the feeding bin 11, evacuate the feeding bin 11 until the pressure reaches below 20 Pa, open the sealing structure 20 between the feeding bin 11 and the vacuum bin 12, send the crucible into the vacuum bin 12 through the transfer assembly, and close the sealing structure 20 between the feeding bin 11 and the vacuum bin 12. Subsequently, while preheating the vacuum bin 12, perform a vacuum pumping operation, with the preheating temperature of 300 °C and the vacuum time of 10 hours.

[0068] After the vacuum is ended, the first transition chamber 13 is pumped to a vacuum and heated to a temperature of 300 °C. The sealing structure 20 between the first transition chamber 13 and the vacuum chamber 12 is opened, and the crucible is sent into the first transition chamber 13 through the conveying assembly 30, and the sealing structure between the first transition chamber 13 and the vacuum chamber 12 is closed. Subsequently, the first transition chamber 13 is adjusted until the atmosphere type, air pressure and temperature in the first transition chamber 13 reach the same as those in the first reaction chamber 14. The sealing structure 20 between the first transition chamber 13 and the first reaction chamber 14 is opened, and the crucible is sent into the first reaction chamber 14 through the conveying assembly 30, and the sealing structure between the first transition chamber 13 and the first reaction chamber 14 is closed. The first reaction chamber 14 is the first stage of the reaction, with the pressure controlled at 30000 kPa, the temperature controlled at 1500 °C, and the time being 15 hours.

[0069] After the first-stage reaction ends, the second transition chamber 15 is adjusted to have the same atmosphere type, pressure and temperature as the first reaction chamber 14. The sealing structure 20 between the first reaction chamber 14 and the second transition chamber 15 is opened, and after the crucible is sent into the second transition chamber 15, the sealing structure between the first reaction chamber 14 and the second transition chamber 15 is closed. Subsequently, the second transition chamber 15 is adjusted until the atmosphere type, air pressure and temperature in the second transition chamber 15 reach the same as those in the second reaction chamber 16. The sealing structure 20 between the second transition chamber 15 and the second reaction chamber 16 is opened, and after the crucible is sent into the second reaction chamber 16, the sealing structure between the second transition chamber 15 and the second reaction chamber 16 is closed. The second reaction chamber 16 is the second stage of the reaction, with the pressure controlled at 2000 kPa, the temperature controlled at 2200 °C, and the time being 25 hours.

[0070] After the second-stage reaction ends, the atmosphere type, pressure and temperature of the third transition chamber 17 are controlled to be the same as those in the first reaction chamber 14. The sealing structure 20 between the third transition chamber 17 and the second reaction chamber 16 is opened, and after the crucible is sent into the third transition chamber 17, the sealing structure between the third transition chamber 17 and the second reaction chamber 16 is closed. Subsequently, the third transition chamber 17 is adjusted so that its atmosphere type and air pressure meet the requirements of the cooling chamber 18. The sealing structure 20 between the third transition chamber 17 and the cooling chamber 18 is opened, and after the crucible is sent into the cooling chamber 18, the sealing structure between the third transition chamber 17 and the cooling chamber 18 is closed. The cooling chamber 18 is the crucible cooling stage. In order to achieve a better cooling effect, it can also be divided into multiple cooling chamber 18 compartments. Until the temperature reaches below 50 °C.

[0071] After the cooling ends, the atmosphere type and pressure of the discharge chamber 19 are controlled to be the same as those in the cooling chamber 18. The sealing structure 20 between the discharge chamber 19 and the cooling chamber 18 is opened, and after the crucible is sent into the discharge chamber 19, the sealing structure between the discharge chamber 19 and the cooling chamber 18 is closed. Subsequently, the sealing door 40 of the discharge chamber 19 is opened, the crucible is taken out, and the synthesis process ends.

[0072] Repeat the above steps, and continuous synthesis can be achieved.

[0073] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A continuous synthesis device based on silicon carbide powder materials, characterized in that, Comprising: A reaction furnace having a plurality of chambers arranged in sequence along the horizontal direction, with communication ports provided between any two adjacent chambers; each of the chambers is set as a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber, and a discharging chamber in sequence; the arrangement direction of each of the chambers is the first direction, and the horizontal direction perpendicular to the first direction is the second direction; A plurality of sealing structures, each of the sealing structures corresponding to each of the communication ports one by one; A plurality of conveying components, each of the conveying components being arranged at the bottom of each of the chambers for conveying a crucible containing a carbon-silicon mixture; Wherein, each of the conveying components includes a first rotating shaft, a second rotating shaft, a first driving component, a second driving component, a rotating cylinder, and a one-way bearing; there are a plurality of the first rotating shafts, each of the first rotating shafts being arranged parallel and spaced along the first direction, and each of the first rotating shafts being arranged on one side of the reaction furnace along the second direction; each of the first rotating shafts is rotatably arranged on the reaction furnace, and one end extends into the corresponding chamber; the outer end of each of the first rotating shafts is power-connected to the first driving component; there are a plurality of the second rotating shafts, each of the second rotating shafts being arranged on the other side of the reaction furnace along the second direction, and each of the second rotating shafts corresponding to each of the first rotating shafts coaxially; the outer end of the second rotating shaft arranged near the feeding chamber side is power-connected to the second driving component; the rotating cylinder is located in the corresponding chamber, and both ends are rotatably connected to the corresponding first rotating shaft and the second rotating shaft through the one-way bearing.

2. The continuous synthesis device based on silicon carbide powder as described in claim 1, characterized in that, Each of the sealing structures includes a chamber door slidably arranged on the reaction furnace along the vertical direction.

3. The continuous synthesis device based on silicon carbide powder as claimed in claim 1, wherein, A plurality of sealing doors corresponding to each of the chambers one by one are provided on the reaction furnace.

4. The continuous synthesis device based on silicon carbide powder as claimed in claim 1, wherein, The rotating cylinder is made of high-temperature resistant ceramic material.

5. The continuous synthesis device based on silicon carbide powder as claimed in claim 4, characterized in that, The height of the top end of each of the rotating cylinders is higher than the height of the bottom end of each of the communication ports.

6. The continuous synthesis device based on silicon carbide powder materials according to claim 1, wherein, The first driving component includes: A first driver power-connected to one of the first rotating shafts; A plurality of chain drive structures, and any two adjacent first rotating shafts are power-connected through a set of the chain drive structures.

7. The continuous synthesis device based on silicon carbide powder as claimed in claim 1, characterized in that, The second driving component includes a second driver.

8. A continuous synthesis method based on silicon carbide powder materials, characterized in that, Using the continuous synthesis device based on silicon carbide powder according to any one of claims 1-7; the continuous synthesis method based on silicon carbide powder includes the following steps: Feeding and preheating, putting a crucible containing a carbon-silicon mixture into the feeding chamber, and sending the crucible containing the carbon-silicon mixture into the vacuum chamber through the conveying component for preheating; Front-end material transition transfer and reaction, adjusting the internal environment of the first transition chamber to be the same as that of the vacuum chamber, and opening the sealing structure between the vacuum chamber and the first transition chamber, and sending the crucible containing the carbon-silicon mixture into the first transition chamber through the conveying component; then changing the internal environment of the first transition chamber to be the same as that of the first reaction chamber, and after opening the sealing structure between the first transition chamber and the first reaction chamber, sending the crucible containing the carbon-silicon mixture into the first reaction chamber through the conveying component; The backend materials are transferred and reacted transitively. The internal environment of the second transition bin is adjusted to be the same as that of the first reaction bin, and the sealing structure between the second transition bin and the first reaction bin is opened. The crucible containing the carbon-silicon mixture is sent into the second transition bin through the conveying component. Subsequently, the internal environment of the second transition bin is changed to be the same as that of the second reaction bin. After the sealing structure between the second transition bin and the second reaction bin is opened, the crucible containing the carbon-silicon mixture is sent into the second reaction bin through the conveying component. Cooling and discharging. The internal environment of the third transition bin is adjusted to be the same as that of the second reaction bin, and the sealing structure between the third transition bin and the second reaction bin is opened. The crucible containing the carbon-silicon mixture is sent into the third transition bin through the conveying component. Subsequently, the internal environment of the third transition bin is changed to be the same as that of the cooling bin, and the sealing structure between the cooling bin and the third transition bin is opened. The crucible containing the carbon-silicon mixture is sent into the cooling bin through the conveying component. Subsequently, it is transferred to the storage bin.

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