Wafer cutting control method and device, equipment, storage medium and program product

Abstract

The invention provides a wafer cutting control method, device and equipment, a storage medium and a program product. The method comprises the following steps: when wafer cutting is carried out by adopting a segmented transition cutting process, obtaining the number of wafer segments; based on the number of the wafer segments, the cutting area of each segment of the wafer is calculated; on the basis of the wafer cutting area of each section, the set wire supply speed of each section is calculated; wafer cutting is carried out according to the set wire supply speed, the wire bow sinking distance corresponding to the set wire supply speed is monitored in real time in the wafer cutting process, and if the wire bow sinking distance does not conform to the preset standard sinking range, the set wire supply speed is adjusted; therefore, the wire bow sinking distance corresponding to the adjusted set wire supply speed conforms to a preset standard sinking range. According to the wafer cutting method, the Warp value and the Bow value can be effectively guaranteed in the wafer cutting process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer cutting control method, device, equipment, storage medium and program product. Background Art

[0002] At present, wafer processing is difficult, especially for silicon carbide wafers. The Warp and Bow values ​​in the flatness index of silicon carbide wafers will rebound during the processing, and these two values ​​will directly affect the subsequent packaging process and chip performance. The better the flatness index of the silicon carbide wafer, the better the device performance, so the downstream links have higher and higher requirements for the surface flatness of silicon carbide wafers, and the requirements for the Warp and Bow values ​​are particularly strict. Therefore, it is very important to control the Warp and Bow values ​​in the silicon carbide flatness index during the wafer cutting process. Summary of the invention

[0003] The embodiments of the present invention provide a wafer cutting control method, device, equipment, storage medium and program product to solve the problem that the Warp value and Bow value cannot be effectively guaranteed during the wafer cutting process.

[0004] In a first aspect, an embodiment of the present invention provides a wafer cutting control method, comprising: When wafer cutting is performed using a segmented transition cutting process, the number of wafer segments is obtained; Based on the number of wafer segments, respectively calculate the cutting area of ​​each wafer segment; Based on the wafer cutting area of ​​each section, respectively calculating the set wire feeding speed of each section; Wafer cutting is performed according to the set wire feed speed, and the wire bow depression distance corresponding to the set wire feed speed is monitored in real time during the wafer cutting process. If the wire bow depression distance does not conform to a preset standard depression range, the set wire feed speed is adjusted so that the wire bow depression distance corresponding to the adjusted set wire feed speed conforms to the preset standard depression range.

[0005] In a possible implementation, if the wire bow depression distance does not meet a preset standard depression range, adjusting the set wire feeding speed includes: Based on the principle of reducing wire with strong cutting capacity, when the wire bow depression distance is less than the lower limit of the preset standard depression range, the set wire feeding speed is reduced; Based on the principle of increasing the wire with weak cutting capacity, when the wire bow depression distance is greater than the upper limit value of the preset standard depression range, the set wire feeding speed is increased.

[0006] In a possible implementation, the step of calculating the set wire feed speed of each section based on the wafer cutting area of ​​each section includes: According to the wafer cutting area of ​​each section, the theoretical wire supply quantity of each section is calculated respectively; According to the theoretical wire supply amount of each section, respectively calculating the theoretical wire supply speed of each section; The fixed coefficient corresponding to each section is obtained, and the product of the theoretical wire feeding speed of each section and the corresponding fixed coefficient is determined as the set wire feeding speed of each section.

[0007] In a possible implementation, the step of calculating the theoretical wire supply amount of each section according to the cutting area of ​​each section of the wafer includes: according to Calculate the n Theoretical line supply of the segment; in, Indicates n The theoretical supply of the segment, Indicates the total length of the spool winding. Indicates the length of the wire network wiring. Indicates n Segment wafer cutting area, Represents the total cutting area.

[0008] In a possible implementation, the calculating the theoretical wire supply speed of each section according to the theoretical wire supply amount of each section includes: Obtain the cutting height of each section and the cutting speed of each workbench; Based on the ratio of the cutting height of each section and the cutting speed of the workbench of each section, the cutting time of each section is correspondingly determined; Based on the ratio of the theoretical wire supply amount of each section and the cutting time of each section, the theoretical wire supply speed of each section is correspondingly determined.

[0009] In a possible implementation, the calculating the cutting area of ​​each wafer segment based on the number of wafer segments includes: Obtaining a wafer radius and a wafer diameter, and determining a side edge length corresponding to each segment based on a ratio of the wafer diameter to the number of wafer segments; the side edge length corresponding to each segment is used to characterize a distance between a wafer center and each segment; Based on the adjacent edge length and the wafer radius, the triangular area and the sector area corresponding to each segment are determined; the triangular area refers to the triangular area formed by each segment and the wafer center; the sector area refers to the sector area formed by the arc corresponding to each segment and the wafer center; The cutting area of ​​each wafer segment is determined according to the difference between the arc area and the triangle area.

[0010] In a second aspect, an embodiment of the present invention provides a wafer cutting control device, comprising: An acquisition module, used for acquiring the number of wafer segments when wafer cutting is performed using a segment transition cutting process; Compute module for: Based on the number of wafer segments, respectively calculate the cutting area of ​​each wafer segment; Based on the wafer cutting area of ​​each section, respectively calculating the set wire feeding speed of each section; A control module is used to perform wafer cutting according to the set wire feed speed, and to monitor in real time the wire bow depression distance corresponding to the set wire feed speed during the wafer cutting process; if the wire bow depression distance does not conform to a preset standard depression range, the set wire feed speed is adjusted so that the wire bow depression distance corresponding to the adjusted set wire feed speed conforms to the preset standard depression range.

[0011] In a third aspect, an embodiment of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the method in the first aspect or any possible implementation of the first aspect is implemented.

[0012] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, it implements the method in the first aspect or any possible implementation of the first aspect.

[0013] In a fifth aspect, an embodiment of the present invention provides a computer program product, including a computer program, which, when executed by a processor, implements the method in the first aspect or any possible implementation manner of the first aspect.

[0014] In the embodiment of the present invention, the set wire feed speed of each section is determined by using the cutting area of ​​each section of the wafer, and the wire bow depression distance is used to reflect the strength of the cutting ability. On this basis, the set wire feed speed in the wafer cutting process is dynamically adjusted in real time according to the strength of the cutting ability, so that the cutting ability corresponding to the set wire feed speed in the entire wafer cutting process is always within an appropriate range, thereby optimizing the Warp value and Bow value of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a flow chart of the implementation of the wafer cutting control method provided by the embodiment of the present invention; Figure 2 is a top view of a silicon carbide wafer provided by an embodiment of the present invention; Figure 3 is a side view of a silicon carbide wafer provided by an embodiment of the present invention; Figure 4 is a schematic diagram of wafer segmentation provided by an embodiment of the present invention; Figure 5It is a schematic diagram of wafer cutting area calculation provided by an embodiment of the present invention; Figure 6 is a schematic diagram of a wafer cutting process provided by an embodiment of the present invention; Figure 7 is a schematic diagram of wafer flatness simulation under strong cutting capability provided by an embodiment of the present invention; Figure 8 is a schematic diagram of wafer flatness simulation under weak cutting capability provided by an embodiment of the present invention; Fig. 9 is a schematic structural diagram of a wafer cutting control device provided by an embodiment of the present invention; Fig.10 is a schematic diagram of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0016] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0017] The Warp and Bow values ​​of wafers will seriously affect the performance of downstream devices, especially silicon carbide wafers. Therefore, it is very important to control the Warp and Bow values ​​during the wafer cutting process.

[0018] In order to effectively control the Warp value and Bow value during wafer cutting, the embodiment of the present invention adjusts the set wire feed speed by detecting the wire bow depression distance of each segment when using the segmented transition cutting process for wafer cutting, thereby achieving the purpose of effectively controlling the Warp value and Bow value. This is because the applicant has found that the strength of the cutting ability can directly affect the size of the Warp value and Bow value, and the wire bow depression distance can just reflect the strength of the cutting ability. Therefore, the embodiment of the present invention calculates the set wire feed speed of each segment in advance according to the wafer cutting area, and adjusts the set wire feed speed according to the wire bow depression distance, so that the cutting ability is within an appropriate range, thereby effectively ensuring the Warp value and Bow value.

[0019] See also Figure 1 , which shows a flowchart of the wafer cutting control method provided by an embodiment of the present invention, and is described in detail as follows: Step 101, when a segmented transition cutting process is used to cut a wafer, the number of wafer segments is obtained.

[0020] Taking silicon carbide wafer as an example, see Figure 2 The silicon carbide wafer is formed into an approximate circle by setting a main positioning edge and a secondary positioning edge on the basis of a circle. Among them, the main positioning edge and the secondary positioning edge are mainly used to position the wafer. Figure 3 For a silicon carbide wafer, one side of the wafer is the Si side and the other side of the wafer is the C side.

[0021] When the embodiment of the present invention utilizes the segmented transition cutting process to cut the wafer, the number of segments of the wafer can be acquired in advance, so as to subsequently calculate the cutting area of ​​each segment of the wafer.

[0022] Step 102, based on the number of wafer segments, respectively calculate the cutting area of ​​each wafer segment.

[0023] Optionally, when calculating the cutting area of ​​each wafer segment, the wafer radius and wafer diameter can be obtained first, and the adjacent edge length corresponding to each segment can be determined based on the ratio of the wafer diameter and the number of wafer segments; then, based on the adjacent edge length and the wafer radius, the triangular area and fan area corresponding to each segment can be determined; finally, according to the difference between the arc area and the triangular area, the cutting area of ​​each wafer segment can be determined accordingly.

[0024] The ratio of the wafer diameter to the number of wafer segments is the distance between two adjacent segments. Figure 4 , when the wafer diameter is 100 mm and the number of wafer segments is 20, the distance between two adjacent segments is 5 mm. The maximum vertical distance between the first segment and the edge of one side of the wafer is also 5 mm, and the maximum vertical distance between the last segment and the edge of the other side of the wafer is also 5 mm.

[0025] According to the distance between two adjacent segments, the cutting height of each segment can be determined accordingly. Figure 4 , the cutting height refers to the vertical distance between each segment and the edge of one side of the wafer. For example, see Figure 4 , the cutting height of the first section is 5mm, the cutting height of the second section is 10mm, and so on, the cutting height of the 20th section is 100mm.

[0026] It should be noted that, considering that the length of the secondary positioning edge is usually small, the influence of the secondary positioning edge on the wafer area and the cutting height of each segment is ignored in the embodiment of the present invention.

[0027] See also Figure 5 The length of the adjacent edge corresponding to each segment is used to characterize the distance between the center of the wafer and each segment. In the embodiment of the present invention, the difference between the wafer radius and the cutting height is determined as the adjacent edge length. Taking the first segment as an example, the cutting height is 5mm, the wafer radius is 50mm, and the adjacent edge length is 45mm.

[0028] On the basis of determining the length of the adjacent side, the triangle area and sector area corresponding to each segment of the cutting line are further determined. Figure 5 , the triangular area refers to the triangular area formed by each segment and the center of the wafer. The sector area refers to the sector area formed by the arc corresponding to each segment and the center of the wafer.

[0029] Taking the first paragraph as an example, the embodiment of the present invention can be based on Calculate the area of ​​the triangle corresponding to the first segment.

[0030] in, represents the area of ​​a triangle, Represents the POEWR function, represents the wafer radius, Indicates the length of the adjacent edge.

[0031] according to Calculate the sector area corresponding to the first segment.

[0032] in, represents the sector area, L represents the arc length. Here, ,in, Indicates the angle formed by the edge length and the wafer radius.

[0033] according to Figure 5 , the difference between the fan-shaped area and the triangle area is the area of ​​the first wafer section.

[0034] According to the above calculation method, the triangular area and the sector area corresponding to the second section can be obtained. Based on the difference between the sector area and the triangular area corresponding to the second section, the area of ​​the first section wafer is subtracted from the difference to obtain the area of ​​the second section wafer. Similarly, the cutting area of ​​each section wafer can be calculated separately.

[0035] Among them, based on the above-mentioned calculated area, the cut area of ​​each wafer segment whose area is reduced due to the influence of the main positioning edge can be further calculated using mapping software. Alternatively, the cut area of ​​each wafer segment can be calculated separately using mapping software directly.

[0036] For example, referring to Table 1, Table 1 provides the cutting area of ​​each segment of wafers with different diameters after 20-segment transition cutting.

[0037] Table 1

[0038] Step 103, based on the wafer cutting area of ​​each section, respectively calculate the set wire feed speed of each section.

[0039] Optionally, when calculating the set wire feed speed of each section, the theoretical wire feed amount of each section can be calculated according to the wafer cutting area of ​​each section; then, the theoretical wire feed speed of each section can be calculated according to the theoretical wire feed amount of each section; finally, the fixed coefficient corresponding to each section is obtained, and the product of the theoretical wire feed speed of each section and the corresponding fixed coefficient is determined as the set wire feed speed of each section.

[0040] Specifically, according to Calculate the n Theoretical line supply of the segment; in, Indicates n The theoretical supply of the segment, Indicates the total length of the spool winding. Indicates the length of the wire network wiring. Indicates n Segment wafer cutting area, Represents the total cutting area.

[0041] Here, the total length of the bobbin winding can be any value in the range of 500 to 1000 m. The total cutting area is the sum of the cutting areas of each wafer segment, and can also be obtained by subtracting the wafer area lost due to the main positioning edge from the circular area calculated using the wafer radius.

[0042] Optionally, when calculating the theoretical wire feed speed of each section, the cutting height of each section and the workbench cutting speed of each section can be obtained respectively; then, based on the ratio of the cutting height of each section and the workbench cutting speed of each section, the cutting time of each section can be determined accordingly; finally, based on the ratio of the theoretical wire feed amount of each section and the cutting time of each section, the theoretical wire feed speed of each section can be determined accordingly.

[0043] The ratio of the cutting height to the table cutting speed is the cutting time. The ratio of the theoretical wire supply amount to the cutting time is the theoretical wire supply speed. In the embodiment of the present invention, the theoretical wire supply speed of each section can be determined according to the above calculation logic.

[0044] On the basis of determining the theoretical wire feeding speed of each section, the fixed coefficient corresponding to each section is obtained respectively, and the product of the theoretical wire feeding speed and the corresponding fixed coefficient is determined as the set wire feeding speed.

[0045] The embodiment of the present invention can obtain multiple wafers with good Warp value and Bow value in advance, calculate the ratio of the actual cutting speed of each section of the multiple wafers in the segmented cutting process to the theoretical cutting speed, and determine the ratio as the above-mentioned fixed coefficient. Here, the fixed coefficient is used to characterize the ratio of the actual wire feeding speed to the theoretical wire feeding speed when the Warp value and Bow value are good.

[0046] Referring to Table 2, the embodiment of the present invention exemplarily provides the fixed coefficient values ​​corresponding to each segment. In Table 2, the K value is used to represent the value of the fixed coefficient.

[0047] Table 2

[0048] The embodiment of the present invention determines the actual wire supply amount by multiplying the set wire supply speed and the cutting time based on the set wire supply speed, and then determines the actual wire supply amount of each section. Here, wires can be prepared according to the actual wire supply amount of each section to prepare for the current wafer cutting work.

[0049] Step 104, perform wafer cutting according to the set wire feed speed, and monitor the wire bow depression distance corresponding to the set wire feed speed in real time during the wafer cutting process. If the wire bow depression distance does not meet the preset standard depression range, adjust the set wire feed speed so that the wire bow depression distance corresponding to the adjusted set wire feed speed meets the preset standard depression range.

[0050] See also Figure 6 In the uncut state, the cutting line is horizontally arranged between the two groove wheels, and the two groove wheels rotate at the set wire supply speed, so that the cutting line moves horizontally at the set wire supply speed. In the cutting state, the wafer moves vertically downward to contact the cutting line, so that the moving cutting line can realize wafer cutting.

[0051] See also Figure 6 During wafer cutting, the cutting line is depressed by force. The distance between the lowest point of the depression of the cutting line and the horizontal line between the highest points of the two groove wheels is the line bow depression distance.

[0052] The line bow depression distance during wafer cutting can reflect the strength of the cutting ability. The strength of the cutting ability can affect the Warp value and Bow value of the wafer. The embodiment of the present invention compares the current line bow depression distance with the standard depression range to determine whether the current cutting ability needs to be adjusted so that the Warp value and Bow value of the wafer after cutting are within an appropriate range.

[0053] Here, the preset standard concave range can be determined according to actual conditions. For example, the standard concave range can be determined by counting the line bow concave distance of wafers with better Warp value and Bow value during the cutting process. For example, the preset standard concave range can be 1~2mm.

[0054] Optionally, when adjusting the set wire feed speed, the set wire feed speed can be lowered when the wire bow depression distance is less than the lower limit of the preset standard depression range; based on the principle of weak increase in cutting capacity, the set wire feed speed can be increased when the wire bow depression distance is greater than the upper limit of the preset standard depression range.

[0055] The embodiment of the present invention realizes increasing or decreasing the number of threads by increasing or decreasing the set thread supply speed.

[0056] See also Figure 7 When the cutting ability is strong, the line bow in the up and down directions is small, and the cutting line is subjected to force from left to right, which leads to an increase in the Bow value and a decrease in the Warp value. At this time, the Bow value can be reduced and the Warp value can be increased by reducing the cutting ability. Figure 8When the cutting ability is weak, the line bow depression distance in the up and down directions is large, and the cutting line is subjected to up and down forces, which leads to a decrease in the Bow value and an increase in the Warp value. At this time, the Bow value can be increased and the Warp value can be reduced by improving the cutting ability.

[0057] In essence, the process of adjusting the set wire feed speed is the process of adjusting the fixed coefficient. The embodiment of the present invention can adjust the set speed and then update the fixed coefficient, thereby continuously accumulating data and continuously improving the mathematical relationship between the actual wire feed speed and the theoretical wire feed speed when the Warp value and Bow value are better, thereby providing a more accurate data reference basis for subsequent wafer cutting.

[0058] Here, the embodiment of the present invention can exemplarily give the adjustment range of the fixed coefficient, and then determine the adjustment range of the set wire feeding speed. Exemplarily, the adjustment range of the fixed coefficient is ±0.15, that is, based on the fixed coefficient determined in Table 2 above, it can float up and down by 0.15, thereby providing a data reference for setting the adjustment range of the wire feeding speed.

[0059] Compared with the prior art, the embodiment of the present invention calculates the theoretical wire supply amount and the theoretical wire supply speed, determines the set wire supply speed according to the fixed coefficient ratio, and then fine-tunes the set wire supply speed according to the principle of reducing the wire when the cutting ability is strong and increasing the wire when the cutting ability is weak, thereby finally achieving the effect of controlling the wafer Warp value and Bow value.

[0060] The embodiment of the present invention provides a mathematical relationship between the theoretical wire supply amount and the cutting area of ​​each wafer segment, provides a fixed coefficient value between the theoretical wire supply speed and the set wire supply speed, and also provides a wire supply principle for controlling the Warp value and the Bow value, intuitively indicating the cutting adjustment direction and reducing the actual operation exploration process.

[0061] It should be understood that the order of execution of the steps in the above embodiment does not necessarily mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0062] The following is an embodiment of the device of the present invention. For details not described in detail therein, reference may be made to the corresponding method embodiment described above.

[0063] Fig. 9 The structure diagram of the wafer cutting control device provided by the embodiment of the present invention is shown. For the convenience of explanation, only the part related to the embodiment of the present invention is shown, which is described in detail as follows: like Fig. 9 As shown, the wafer cutting control device 9 includes: an acquisition module 91 , a calculation module 92 and a control module 93 .

[0064] An acquisition module 91 is used to acquire the number of wafer segments when wafer cutting is performed using a segmented transition cutting process; The calculation module 92 is used for: Based on the number of wafer segments, the cutting area of ​​each wafer segment is calculated respectively; Based on the wafer cutting area of ​​each section, the set wire feed speed of each section is calculated respectively; The control module 93 is used to perform wafer cutting according to the set wire feed speed, and to monitor the wire bow depression distance corresponding to the set wire feed speed in real time during the wafer cutting process. If the wire bow depression distance does not meet the preset standard depression range, the set wire feed speed is adjusted so that the wire bow depression distance corresponding to the adjusted set wire feed speed meets the preset standard depression range.

[0065] In a possible implementation, the control module 93 is specifically configured to: Based on the principle of strong cutting capacity and reduced wire, when the wire bow depression distance is less than the lower limit of the preset standard depression range, the set wire feeding speed is reduced; Based on the principle of increasing the wire with weak cutting capacity, when the wire bow depression distance is greater than the upper limit value of the preset standard depression range, the set wire feeding speed is increased.

[0066] In a possible implementation, the calculation module 92 is specifically configured to: According to the wafer cutting area of ​​each section, the theoretical wire supply quantity of each section is calculated respectively; According to the theoretical wire supply quantity of each section, the theoretical wire supply speed of each section is calculated respectively; The fixed coefficient corresponding to each section is obtained, and the product of the theoretical wire feeding speed of each section and the corresponding fixed coefficient is determined as the set wire feeding speed of each section.

[0067] In a possible implementation, the calculation module 92 is specifically configured to: according to Calculate the n Theoretical line supply of the segment; in, Indicates n The theoretical supply of the segment, Indicates the total length of the spool winding. Indicates the length of the wire network wiring. Indicates n Segment wafer cutting area, Represents the total cutting area.

[0068] In a possible implementation, the calculation module 92 is specifically configured to: Obtain the cutting height of each section and the cutting speed of each workbench; Based on the ratio of the cutting height of each section and the cutting speed of the workbench of each section, the cutting time of each section is correspondingly determined; Based on the ratio of the theoretical wire supply amount of each section and the cutting time of each section, the theoretical wire supply speed of each section is determined accordingly.

[0069] In a possible implementation, the calculation module 92 is specifically configured to: Obtaining the wafer radius and the wafer diameter, and determining the edge length corresponding to each segment based on the ratio of the wafer diameter to the number of wafer segments; the edge length corresponding to each segment is used to characterize the distance between the wafer center and each segment; Based on the edge length and wafer radius, determine the triangular area and sector area corresponding to each segment; the triangular area refers to the triangular area formed by each segment and the wafer center; the sector area refers to the sector area formed by the arc corresponding to each segment and the wafer center; The cutting area of ​​each wafer segment is determined according to the difference between the arc area and the triangle area.

[0070] This device embodiment is used to implement the above method embodiment. Its technical principle and implementation effect are the same as those of the above method embodiment, and will not be repeated here.

[0071] Fig.10 Schematic diagram of an electronic device provided by an embodiment of the present invention. Fig.10 As shown, the electronic device 10 of this embodiment includes: a processor 1000 and a memory 1001. The memory 1001 stores a computer program 1002. When the processor 1000 executes the computer program 1002, the steps in the above-mentioned method embodiments are implemented. Alternatively, when the processor 1000 executes the computer program 1002, the functions of each module / unit in the above-mentioned device embodiments are implemented.

[0072] Exemplarily, the computer program 1002 may be divided into one or more modules / units, which are stored in the memory 1001 and executed by the processor 1000 to implement the present invention. The one or more modules / units may be a series of computer program instruction segments capable of implementing specific functions, which are used to describe the execution process of the computer program 1002 in the electronic device 100.

[0073] The electronic device 100 may include, but is not limited to, a processor 1000 and a memory 1001. Those skilled in the art will appreciate that Fig.10 It is only an example of the electronic device 10 and does not constitute a limitation of the electronic device 10. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the electronic device 10 may also include input and output devices, network access devices, buses, etc.

[0074] The processor 1000 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or the processor may be any conventional processor, etc.

[0075] The memory 1001 may be an internal storage unit of the electronic device 10, such as a hard disk or memory of the electronic device 10. The memory 1001 may also be an external storage device of the electronic device 10, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card (FlashCard), etc. equipped on the electronic device 10. Further, the memory 1001 may also include both an internal storage unit of the electronic device 10 and an external storage device. The memory 1001 is used to store the computer program 1002 and other programs and data required by the electronic device 10. The memory 1001 may also be used to temporarily store data that has been output or is to be output.

[0076] For the convenience and simplicity of description, only the division of the above functional modules / units is used as an example for illustration. In actual applications, the above functions can be assigned to different functional modules / units as needed. The above modules / units can be implemented in the form of hardware, software, or a combination of hardware and software.

[0077] The embodiment of the present invention further provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, the methods in the above method embodiments are implemented.

[0078] The embodiment of the present invention further provides a computer program product, including a computer program. When the computer program is executed by a processor, the methods in the above method embodiments are implemented.

[0079] The computer program includes computer program code, which may be in source code form, object code form, executable file or some intermediate form, etc. Computer readable media may include: any entity or device capable of carrying computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal and software distribution medium, etc.

[0080] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments. If there is no special explanation and logical conflict, the terms and / or descriptions between different embodiments are consistent and can be referenced to each other. The technical features in different embodiments can be combined to form a new embodiment according to their internal logical relationship.

[0081] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A wafer cutting control method, characterized in that: include: When wafer cutting is performed using a segmented transition cutting process, the number of wafer segments is obtained; Based on the number of wafer segments, respectively calculate the cutting area of ​​each wafer segment; Based on the wafer cutting area of ​​each section, respectively calculating the set wire feeding speed of each section; Wafer cutting is performed according to the set wire feed speed, and the wire bow depression distance corresponding to the set wire feed speed is monitored in real time during the wafer cutting process. If the wire bow depression distance does not conform to a preset standard depression range, the set wire feed speed is adjusted so that the wire bow depression distance corresponding to the adjusted set wire feed speed conforms to the preset standard depression range.

2. The wafer cutting control method according to claim 1, characterized in that: If the wire bow depression distance does not meet the preset standard depression range, adjusting the set wire feeding speed includes: Based on the principle of reducing wire with strong cutting capacity, when the wire bow depression distance is less than the lower limit of the preset standard depression range, the set wire feeding speed is reduced; Based on the principle of increasing the wire with weak cutting capacity, when the wire bow depression distance is greater than the upper limit value of the preset standard depression range, the set wire feeding speed is increased.

3. The wafer cutting control method according to claim 1 or 2, characterized in that: The step of calculating the set wire feed speed of each section based on the wafer cutting area of ​​each section includes: According to the wafer cutting area of ​​each section, the theoretical wire supply quantity of each section is calculated respectively; According to the theoretical wire supply amount of each section, respectively calculating the theoretical wire supply speed of each section; The fixed coefficient corresponding to each section is obtained, and the product of the theoretical wire feeding speed of each section and the corresponding fixed coefficient is determined as the set wire feeding speed of each section.

4. The wafer cutting control method according to claim 3, characterized in that: The theoretical supply amount of each section is calculated according to the cutting area of ​​each section of the wafer, including: according to Calculate the n Theoretical line supply of the segment; in, Indicates n The theoretical supply of the segment, Indicates the total length of the spool winding. Indicates the length of the wire network wiring. Indicates n Segment wafer cutting area, Represents the total cutting area.

5. The wafer cutting control method according to claim 3, characterized in that: The calculating of the theoretical wire supply speed of each section according to the theoretical wire supply amount of each section includes: Obtain the cutting height of each section and the cutting speed of each workbench; Based on the ratio of the cutting height of each section and the cutting speed of the workbench of each section, the cutting time of each section is correspondingly determined; Based on the ratio of the theoretical wire supply amount of each section and the cutting time of each section, the theoretical wire supply speed of each section is correspondingly determined.

6. The wafer cutting control method according to claim 1 or 2, characterized in that: The step of calculating the cutting area of ​​each wafer segment based on the number of wafer segments includes: Obtaining a wafer radius and a wafer diameter, and determining a side edge length corresponding to each segment based on a ratio of the wafer diameter to the number of wafer segments; the side edge length corresponding to each segment is used to characterize a distance between a wafer center and each segment; Based on the adjacent edge length and the wafer radius, the triangular area and the sector area corresponding to each segment are determined; the triangular area refers to the triangular area formed by each segment and the wafer center; the sector area refers to the sector area formed by the arc corresponding to each segment and the wafer center; The cutting area of ​​each wafer segment is determined according to the difference between the arc area and the triangle area.

7. A wafer cutting control device, characterized in that: include: An acquisition module, used for acquiring the number of wafer segments when wafer cutting is performed using a segment transition cutting process; Compute module for: Based on the number of wafer segments, respectively calculate the cutting area of ​​each wafer segment; Based on the wafer cutting area of ​​each section, respectively calculating the set wire feeding speed of each section; A control module is used to perform wafer cutting according to the set wire feed speed, and to monitor in real time the wire bow depression distance corresponding to the set wire feed speed during the wafer cutting process; if the wire bow depression distance does not conform to a preset standard depression range, the set wire feed speed is adjusted so that the wire bow depression distance corresponding to the adjusted set wire feed speed conforms to the preset standard depression range.

8. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the method according to any one of claims 1 to 6 when executing the computer program.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

10. A computer program product, characterized in that The method comprises a computer program, which implements the method according to any one of claims 1 to 6 when being executed by a processor.

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