Wafer electroplating device and integrated wafer electroplating method

Abstract

The invention relates to the technical field of wafer preparation, and particularly discloses a wafer electroplating device which comprises an integrated electroplating chamber and a working medium switching flow path, the integrated electroplating chamber is provided with a reaction cavity and a placing groove for placing a wafer, the groove bottom of the placing groove is provided with an alignment hole communicated with the reaction cavity, and the integrated electroplating chamber further comprises a chamber liquid inlet and a chamber liquid outlet which are communicated with the reaction cavity; the working medium switching flow path can switch working media acting on the reaction cavity so that the working media can be connected into the vacuum pump for vacuumizing, connected into the infiltrating liquid for infiltrating, connected into the plating liquid for electroplating and connected into the cleaning liquid for cleaning. The wafer electroplating device provided by the invention integrates the vacuum infiltration chamber, the electroplating chamber and the cleaning chamber, is small in occupied space, high in efficiency and low in manufacturing cost, and overcomes the defects of large occupied space, low efficiency and high manufacturing cost of a traditional discrete wafer electroplating device. The invention further discloses an integrated wafer electroplating method which also has the technical effects.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer preparation, and more specifically, to a wafer electroplating device and an integrated wafer electroplating method. Background Art

[0002] Wafer electroplating involves three key processes: pre-treatment, electroplating, and post-treatment of electroplated wafers. The pre-treatment wafer wetting is the key to ensure that the areas of the wafer that need to be plated can be fully in contact with the plating solution during electroplating, and that the wafer will not be unable to plate the coating due to bubbles adsorbed on it. The vacuum pre-wetting method can absorb the air in the electroplating filling hole on the wafer under the action of negative pressure, so that the wetting liquid can smoothly enter the filling hole cavity.

[0003] The post-processing process involves cleaning the residual plating solution components on the wafer plating layer. For the copper plating layer, fast and effective cleaning can prevent the copper plating layer from oxidizing, which will lead to a decrease in the wafer electroplating yield, an increase in defects, and an increase in the cost of the wafer-level electroplating process.

[0004] Conventional wafer electroplating methods require the installation of a wafer vacuum infiltration device and a cleaning device that are separate from the electroplating chamber. The wafer first enters the wafer vacuum infiltration device for pre-treatment. After vacuum infiltration, it needs to be transferred to the electroplating chamber for electroplating. After the electroplating is completed, it needs to be transferred to the cleaning device for cleaning again. There are many wafer processing steps, and the manufacturing reliability is low. In addition, the transfer of each device involves multiple disassembly and assembly of the wafer from the wafer fixture, so the production efficiency is low. In addition, multiple separate chambers occupy more equipment space, and the cost also increases accordingly.

[0005] In summary, how to effectively solve the problem of low production efficiency caused by the need to transfer wafer electroplating between pre-processing equipment, electroplating equipment and post-processing equipment is a problem that technical personnel in this field need to solve. Summary of the invention

[0006] In view of this, an object of the present invention is to provide a wafer electroplating device and an integrated wafer electroplating method, which effectively solve the problem of low production efficiency caused by the need to transfer wafer electroplating between pre-processing equipment, electroplating equipment and post-processing equipment.

[0007] In order to achieve the above object, the present invention provides the following technical solutions:

[0008] A wafer electroplating device, comprising:

[0009] An integrated electroplating chamber, comprising a reaction chamber that can be sealed and connected and a placement groove for placing wafers, wherein the bottom of the placement groove is provided with an alignment hole communicating with the reaction chamber, and the integrated electroplating chamber further comprises a chamber liquid inlet and a chamber liquid outlet communicating with the reaction chamber;

[0010] A working medium switching flow path is used to transfer the working medium to the integrated electroplating chamber; the working medium includes an immersion liquid, a plating liquid and a cleaning liquid; the working medium switching flow path includes a first switching valve, a second switching valve, a first liquid pump and a second liquid pump, the first interface of the first switching valve is connected to the first liquid pump, the second interface of the first switching valve is used to access the immersion liquid, the third interface of the first switching valve is used to access the plating liquid, the fourth interface of the first switching valve is used to access the cleaning liquid, and the first interface of the first switching valve can be switched with the second interface of the first switching valve, the third interface of the first switching valve or the fourth interface of the first switching valve The first liquid pump is used to drive the working medium from the first interface of the first switching valve into the reaction chamber or to flow back from the reaction chamber to the first interface of the first switching valve; the second liquid pump is connected between the chamber liquid inlet and the first liquid pump, and is used to drive the working medium from the chamber liquid inlet into the reaction chamber; the first interface of the second switching valve is used to communicate with the vacuum pump, the second interface of the second switching valve is connected with the first liquid pump, the third interface of the second switching valve is connected with the chamber liquid outlet, and the third interface of the second switching valve can be switched and connected with the first interface of the second switching valve or with the second interface of the second switching valve.

[0011] The wafer electroplating device provided by the present invention is provided with an integrated electroplating chamber and a working medium switching flow path. The working medium switching flow path can switch the working medium acting on the reaction chamber, such as connecting a vacuum pump for vacuuming, connecting an infiltration liquid for infiltration, connecting a plating liquid for electroplating, and connecting a cleaning liquid for cleaning. And in the above-mentioned electroplating process, the wafer does not need to be transferred after loading, that is, the wafer does not need to be transferred during the vacuum infiltration, electroplating, and cleaning processes. In summary, the wafer electroplating device provided by the present invention integrates three chambers of vacuum infiltration, electroplating, and cleaning into one, occupies a small space, has high efficiency, and has low manufacturing cost, which improves the shortcomings of traditional discrete wafer electroplating devices, such as large space occupation, low efficiency, and high manufacturing cost.

[0012] In order to achieve the above object, the present invention also provides an integrated wafer electroplating method, using any of the above wafer electroplating devices, comprising:

[0013] In the vacuuming stage, the first interface of the second switching valve is connected to the third interface of the second switching valve, and the vacuum pump is turned on to evacuate the reaction chamber to a specified pressure;

[0014] In the pre-infiltration stage, the vacuum pump is turned off, the third interface of the second switching valve is connected to the second interface of the second switching valve, and the second interface of the first switching valve is connected to the infiltration liquid to enter the reaction chamber. After the infiltration is completed, the first liquid pump and the second liquid pump reversely drive the infiltration liquid to reflux;

[0015] During the electroplating stage, the third interface of the second switching valve is connected to the second interface of the second switching valve, the first interface of the first switching valve is connected to the third interface of the first switching valve, the first liquid pump pumps the plating solution connected to the third interface of the first switching valve to the reaction chamber, the second liquid pump drives the plating solution to circulate between the chamber liquid inlet, the reaction chamber and the chamber liquid outlet, and after the electroplating is completed, the first liquid pump and the second liquid pump reversely drive the plating solution to reflux;

[0016] During the cleaning stage, the third interface of the second switching valve is connected to the second interface of the second switching valve, the first interface of the first switching valve is connected to the third interface of the first switching valve, the first liquid pump pumps the cleaning liquid connected to the fourth interface of the first switching valve to the reaction chamber, the second liquid pump drives the cleaning liquid to circulate between the chamber liquid inlet, the reaction chamber and the chamber liquid outlet, and after cleaning is completed, the first liquid pump and the second liquid pump reversely drive the cleaning liquid to reflux.

[0017] Since the above-mentioned wafer electroplating device has the above-mentioned technical effects, the integrated wafer electroplating method having the wafer electroplating device should also have corresponding technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic structural diagram of a wafer electroplating device provided by the present invention;

[0020] Figure 2 A schematic structural diagram of another wafer electroplating device provided by the present invention;

[0021] Figure 3 A schematic structural diagram of another wafer electroplating device provided by the present invention;

[0022] Figure 4 A schematic diagram of a partial cross-sectional structure of an integrated electroplating chamber provided by the present invention;

[0023] Figure 5 A schematic diagram of a partial cross-sectional structure of an integrated electroplating chamber provided by the present invention;

[0024] Figure 6 A schematic diagram of the structure of a mounting slot provided by the present invention;

[0025] Figure 7 A schematic diagram of a cathode mainboard and wafer assembly provided by the present invention;

[0026] Figure 8 A schematic diagram of the top structure of a reaction chamber provided by the present invention.

[0027] The following are marked in the accompanying drawings:

[0028] Integrated electroplating chamber 100, working medium switching flow path 200, wafer 300;

[0029] Reaction chamber 101, placement groove 102, alignment hole 103, chamber liquid outlet 104, chamber liquid inlet 105, vacuum adsorption opening 106, installation groove 107, sealing ring 108, anode main board 110, cathode main board 120, flexible chamber 130, anode cover 140, cathode cover 150, screw cover body 151, crystal back plate 152, external thread 153, internal thread 121, conductive ring 160, conductive block 170, conductive column 180, pressure sensor 190;

[0030] A first switching valve 201, a second switching valve 202, a first liquid pump 203, a second liquid pump 204, a vacuum pump 205, an immersion liquid container 206, a plating liquid container 207, a cleaning liquid container 208, a first two-way valve 209, a second two-way valve 210, a third two-way valve 211, a first filter device 212, a second filter device 213, an intermediate liquid storage tank 214, a one-way valve 215, a temperature control device 216, a fourth two-way valve 217, a PID pneumatic control valve 218, a retention bottle 219, a vacuum pressure gauge 220, a PID control valve 221, and a flow meter 222; a wafer body 301, and a conductive layer 302. DETAILED DESCRIPTION

[0031] The embodiment of the present invention discloses a wafer electroplating device and an integrated wafer electroplating method to improve the wafer electroplating efficiency.

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] Through the intensive design of the present invention, the functions of electroplating vacuum infiltration pre-treatment, electroplating, cleaning post-treatment, etc. are realized in a sealed and flowable reaction chamber, which has the advantages of small equipment footprint, high process efficiency, low manufacturing cost, etc. The electroplating chamber has a unique sealed electroplating tank structure design and wafer fixing components, which can realize wafer infiltration under vacuum and controllable switching of working media through the electroplating machine system.

[0034] See also Figure 1 , Figure 1 It is a schematic structural diagram of a wafer electroplating device according to a specific embodiment of the present invention.

[0035] In a specific embodiment, the wafer electroplating device provided by the present invention includes an integrated electroplating chamber 100 and a working medium switching flow path 200. Among them, the integrated electroplating chamber 100 has a reaction chamber 101 that can be sealed and connected and a placement groove 102 for placing a wafer 300, and the bottom of the placement groove 102 is provided with a positioning hole 103 connected to the reaction chamber 101, and the integrated electroplating chamber 100 also includes a chamber liquid inlet 105 and a chamber liquid outlet 104 connected to the reaction chamber 101. It can be understood that when the wafer 300 is installed, the side to be electroplated is placed toward the bottom of the placement groove 102 and sealed with the placement groove 102, and the area to be electroplated is exposed by the positioning hole 103, and the positioning hole 103 and part of the reaction chamber 101 are isolated from the space on one side of the notch of the placement groove 102 due to the sealing of the wafer 300 and the placement groove 102. The wafer 300 specifically includes a wafer body 301 and a conductive layer 302 arranged on the surface of the wafer body 301. The chamber liquid inlet 105 and the chamber liquid outlet 104 are respectively connected to the reaction chamber 101, and their specific positions can be set as needed, and are not specifically limited here. It can be understood that in order to make the working medium flow better in the reaction chamber 101, the positions of the chamber liquid inlet 105 and the chamber liquid outlet 104 are as far away as possible, such as being located at opposite ends of the reaction chamber 101.

[0036] The working medium switching flow path 200 is used to transfer the working medium to the integrated electroplating chamber 100, wherein the working medium includes an immersion liquid, a plating liquid and a cleaning liquid. The working medium switching flow path 200 includes a first switching valve 201, a second switching valve 202, a first liquid pump 203 and a second liquid pump 204. The first interface of the first switching valve 201 is connected to the first liquid pump 203, the second interface of the first switching valve 201 is used to access the immersion liquid, the third interface of the first switching valve 201 is used to access the plating liquid, and the fourth interface of the first switching valve 201 is used to access the cleaning liquid, and the first interface of the first switching valve 201 can be switched and connected with the second interface of the first switching valve 201, the third interface of the first switching valve 201 or the fourth interface of the first switching valve 201, and the first liquid pump 203 is used to drive the working medium from the first interface of the first switching valve 201 into the reaction chamber 101 or from the reaction chamber 101 back to the first interface of the first switching valve 201. The second liquid pump 204 is connected between the chamber liquid inlet 105 and the first liquid pump 203, and is used to drive the working medium to enter the reaction chamber 101 through the chamber liquid inlet 105. And the second liquid pump 204 is connected between the chamber liquid outlet 104 and the chamber liquid inlet 105, and can drive the working medium to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104. That is, a circulation loop is formed between the chamber liquid inlet 105, the reaction chamber 101, the chamber liquid outlet 104 and the second liquid pump 204, and the working medium can circulate in the circulation loop under the action of the second liquid pump 204. It can be understood that the working medium can be the immersion liquid connected to the first interface of the first switching valve 201, or the plating liquid connected to the second interface of the first switching valve 201, or the tilting liquid connected to the third interface of the first switching valve 201. The first liquid pump 203 and the second liquid pump 204 are both bidirectional pumps. The first interface of the second switching valve 202 is used to communicate with the vacuum pump 205, the second interface of the second switching valve 202 is communicated with the first liquid pump 203, the third interface of the second switching valve 202 is communicated with the chamber liquid outlet 104, and the third interface of the second switching valve 202 can be switched and communicated with the first interface of the second switching valve 202 or with the second interface of the second switching valve 202. The working medium flow path can be specifically set in the electroplating machine to facilitate the operation of relevant personnel and realize the efficient connection between the electroplating of the wafer 300 and the post-processing cleaning.

[0037] When the wafer electroplating device provided by the present invention is used for electroplating treatment, vacuum is firstly drawn, the first interface of the second switching valve 202 is connected to the third interface of the second switching valve 202, and the vacuum pump 205 is turned on to draw vacuum in the reaction chamber 101 until the vacuum pressure reaches the specified pressure; then pre-infiltration is carried out, the vacuum pump 205 is closed, the third interface of the second switching valve 202 is connected to the second interface of the second switching valve 202, the first interface of the first switching valve 201 is connected to the second interface of the first switching valve 201, and the infiltration liquid connected to the second interface of the first switching valve 201 enters the reaction chamber 101, and after the infiltration is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the infiltration liquid to reflux; then electroplating is carried out, the third interface of the second switching valve 202 is connected to the second interface of the second switching valve 202, the first interface of the first switching valve 201 is connected to the third interface of the first switching valve 201 The first liquid pump 203 pumps the plating solution connected to the third interface of the first switching valve 201 to the reaction chamber 101, and the second liquid pump 204 drives the plating solution to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104. After the electroplating is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the plating solution to reflux; finally, cleaning is performed, the third interface of the second switching valve 202 is connected, the first interface of the first switching valve 201 is connected to the third interface of the first switching valve 201, the first liquid pump 203 pumps the cleaning solution connected to the fourth interface of the first switching valve 201 to the reaction chamber 101, and the second liquid pump 204 drives the cleaning solution to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104. After the cleaning is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the cleaning solution to reflux.

[0038] In summary, the wafer electroplating device can switch the working medium acting on the reaction chamber 101 through the working medium switching flow path 200, such as connecting the vacuum pump 205 for vacuuming, connecting the infiltration liquid for infiltration, connecting the plating liquid for electroplating, and connecting the cleaning liquid for cleaning. And in the above-mentioned electroplating process, the wafer 300 does not need to be transferred after loading, that is, the wafer 300 does not need to be transferred during the vacuum infiltration, electroplating, and cleaning processes. The wafer electroplating device integrates three chambers of vacuum infiltration, electroplating, and cleaning, with a small footprint, high efficiency, and low manufacturing cost, which improves the shortcomings of traditional discrete wafer electroplating devices, such as large footprint, low efficiency, and high manufacturing cost.

[0039] Specifically, the wafer electroplating device includes an immersion liquid container 206, a plating liquid container 207 and a cleaning liquid container 208, the first interface of the first switching valve 201 is connected to the immersion liquid container 206, the second interface of the first switching valve 201 is connected to the plating liquid container 207, and the third interface of the first switching valve 201 is connected to the cleaning liquid container 208. Then the first liquid pump 203 can pump the immersion liquid in the immersion liquid container 206, the plating liquid in the plating liquid container 207 or the cleaning liquid in the cleaning liquid container 208 into the reaction chamber 101, or the reaction chamber 101 can pump the working medium back to the corresponding container. In other embodiments, the immersion liquid container 206, the plating liquid container 207 and the cleaning liquid container 208 may not be provided, and the first interface of the first switching valve 201 can be respectively connected to the immersion liquid source, the plating liquid source and the cleaning liquid source.

[0040] In some embodiments, a first two-way valve 209 is provided between the third interface of the second switching valve 202 and the chamber liquid outlet 104, and a second two-way valve 210 is provided between the chamber liquid inlet 105 and the second liquid pump 204. The first two-way valve 209 can control the on-off of the third interface of the second switching valve 202 and the chamber liquid outlet 104, and the second two-way valve 210 can control the on-off between the chamber liquid inlet 105 and the second liquid pump 204, so as to perform different channel controls at different stages of electroplating.

[0041] In some embodiments, a third two-way valve 211 is provided between the second interface of the second switching valve 202 and the second liquid pump 204. The third two-way valve 211 can control the on-off between the second interface of the second switching valve 202 and the second liquid pump 204, so as to perform different channel controls at different stages of electroplating.

[0042] In some embodiments, a first filter device 212 is provided between the first liquid pump 203 and the second liquid pump 204. The working medium inputted from the first interface of the first switching valve 201 enters the reaction chamber 101 after being filtered by the first filter device 212. The first filter device 212 filters the particulate matter or unnecessary organic matter in the working medium, thereby ensuring the performance of the working medium. In other embodiments, if the input working medium itself can meet the working requirements, the first filter device 212 may not be provided.

[0043] In some embodiments, a second filter device 213 is provided between the second liquid pump 204 and the second interface of the second switching valve 202. When the second liquid pump 204 drives the working medium to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104, the working medium flows through the second filter device 213 and is further filtered by the second filter device 213, thereby improving the performance stability of the working medium in the process of circulating and acting on the wafer 300.

[0044] In some embodiments, an intermediate liquid storage tank 214 is provided between the first liquid pump 203 and the second liquid pump 204, and a one-way valve 215 is provided between the intermediate liquid storage tank 214 and the first liquid pump 203 to allow the working medium to flow from the intermediate liquid storage tank 214 to the first liquid pump 203. The intermediate liquid storage tank 214 can play a temporary storage role for the working medium to ensure that the amount of the working medium circulating in the reaction chamber 101 meets the corresponding processing requirements. Taking the first interface of the first switching valve 201 and the third interface of the first switching valve 201 as an example, the first liquid pump 203 can pump the plating solution of the third interface of the first switching valve 201 into the intermediate liquid storage tank 214. Then, when the second liquid pump 204 is started, the plating solution in the intermediate liquid storage tank 214 can be pumped into the reaction chamber 101, and circulates between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104 for electroplating. After the electroplating is completed, the second liquid pump 204 reversely pumps the plating solution from the reaction chamber 101 back to the intermediate liquid storage tank 214, adjusts the first interface and the third interface of the first switching valve 201 to be connected, starts the first liquid pump 203 reversely pumps the plating solution in the intermediate liquid storage tank 214 back to the first interface through the one-way valve 215, and finally pumps it back to the plating solution container 207 or the plating solution source for recovery.

[0045] In some embodiments, see Figure 2 , and also includes a temperature control regulating device 216, which is used to heat the working medium in the intermediate liquid storage tank 214 for temperature control. The structure of the temperature control regulating device 216 can adopt the conventional settings in the prior art, which will not be repeated here. By setting the temperature control regulating device 216, the working medium in the intermediate liquid storage tank 214, such as the plating solution, can be heated to the process temperature required for the work, further improving the wafer electroplating effect. The temperature control regulating device 216 can specifically be a constant temperature heating device. In the case where there is no requirement for the temperature of the working medium, or an external working medium is used to reach the process temperature, the temperature control regulating device 216 may not be set.

[0046] In some embodiments, the integrated electroplating chamber 100 is provided with a vacuum adsorption opening 106, the vacuum adsorption opening 106 is connected to the placement tank 102, the second switching valve 202 also includes a fourth interface connected to the vacuum adsorption opening 106, and the first interface of the second switching valve 202 is switched and connected to the fourth interface of the second switching valve 202. By providing the vacuum adsorption opening 106, during vacuum adsorption, the first interface of the second switching valve 202 and the fourth interface of the second switching valve 202 and the third interface of the second switching valve 202 are all connected, and the reaction chamber 101 and the placement tank 102 cavity are evacuated under the action of the vacuum pump 205.

[0047] In some embodiments, the vacuum adsorption opening 106 and the reaction chamber 101 are located on the front and back sides of the wafer 300. It can be understood that when the wafer 300 is installed in the placement tank 102, the vacuum adsorption opening 106 and the reaction chamber 101 are respectively arranged on the two sides of the wafer 300, and the side of the wafer 300 facing the reaction chamber 101 is to be electroplated. During vacuum adsorption, the first interface of the second switching valve 202 and the fourth interface of the second switching valve 202 and the third interface of the second switching valve 202 are all connected, and then the reaction chamber 101 and the placement tank 102 cavity are evacuated under the action of the vacuum pump 205, and the front and back sides of the wafer 300 can be connected to the vacuum pump 205, and the air pressure on the two sides can be balanced, so as to avoid that only one side of the wafer 300 is evacuated and the other side is connected to the atmosphere, and the wafer 300 is deformed under the action of the air pressure difference. In other embodiments, the vacuum adsorption opening 106 can also be opened on the opposite sides of the integrated electroplating chamber 100.

[0048] In some embodiments, see Figure 3 A fourth two-way valve 217 is provided between the fourth interface of the second switching valve 202 and the vacuum adsorption opening 106. The fourth two-way valve 217 can control the on-off between the fourth interface of the second switching valve 202 and the vacuum adsorption opening 106, so as to perform different channel controls at different stages of electroplating.

[0049] In some embodiments, a PID pneumatic regulating valve 218 is further provided between the vacuum pump 205 and the first interface of the second switching valve 202 to adjust the flow rate of the pumped gas. In some embodiments, a retention bottle 219 is further provided between the vacuum pump 205 and the first interface of the second switching valve 202 to perform the function of gas-liquid separation, ensuring that the gas is pumped away by the vacuum pump 205 while the liquid is retained by the retention bottle 219. In some embodiments, a vacuum pressure gauge 220 is further provided between the vacuum pump 205 and the first interface of the second switching valve 202 to detect the vacuum pressure.

[0050] In some embodiments, a PID control valve 221 is further provided between the second liquid pump 204 and the chamber liquid outlet 104 to control the flow rate of the working medium in the circulation loop. In some embodiments, a flow meter 222 is further provided between the second liquid pump 204 and the chamber liquid outlet 104 to detect the flow rate of the working medium in the circulation loop.

[0051] In some embodiments, see Figure 4 and Figure 6The integrated electroplating chamber 100 includes an electroplating body and a cover. The electroplating body includes a stacked and through placement groove 102 and a reaction chamber 101. The bottom of the placement groove 102 is provided with a mounting groove 107 on the surface facing the wafer 300. A sealing ring 108 is provided in the mounting groove 107. The sealing ring 108 is dispersedly arranged at multiple points around the alignment hole or arranged in a whole circle. The electroplating body is provided with a chamber liquid inlet 105 and a chamber liquid outlet 104 that are connected to the reaction chamber 101; the cover is detachably and sealedly connected to the electroplating body, and is used to cover the wafer 300 in the placement groove 102. It can be understood that the electroplating body and the cover are split structures and are connected in a detachable manner, so as to facilitate the placement and removal of the wafer 300. By setting a sealing ring 108 at the bottom of the placement groove 102, when the wafer 300 is placed in the placement groove 102 and the cover body is sealed and connected to the electroplating body, the wafer 300 is pressed against the sealing ring 108, thereby forming a reliable seal to prevent the working medium of the reaction chamber 101 from affecting the other side of the wafer 300. The integrated electroplating chamber 100 is arranged as above, with a simple structure and small space occupation. In other embodiments, a socket can also be set on the electroplating body for inserting the wafer 300. In the case where a vacuum adsorption opening 106 is provided, the vacuum adsorption opening 106 is correspondingly opened in the cover body and communicated with the placement groove 102.

[0052] In some embodiments, the cover and the electroplating body are locked and connected by a threaded structure. For example, an external thread 153 is provided on the cover, and an internal thread 121 is correspondingly provided on the electroplating body. The threaded connection is easy to operate and can achieve effective sealing.

[0053] In some embodiments, the cover body includes a screw cap body 151 and a crystal back plate 152. The screw cap body 151 is used for the electroplated main body threaded connection, and the crystal back plate 152 is pressed between the placement groove 102 and the screw cap body 151. The crystal back plate 152 is provided with a receiving groove for receiving the wafer 300.

[0054] In some embodiments, see Figure 5 , along the direction from the wafer 300 to the reaction chamber 101 , the diameter width of the alignment hole 103 gradually increases; the alignment hole 103 adopts the above shape to have the function of limiting the reaction area and improving the fluid flow pattern.

[0055] In some embodiments, the alignment hole 103 is a wedge-shaped structure, and the wedge-shaped structure is formed by processing the chamber frame. In other embodiments, the opening of a specific shape can also be integrated or assembled with the flow forming part.

[0056] In some embodiments, the longitudinal thickness of the sealing ring 108 is greater than the longitudinal depth of the mounting groove 107 , so as to ensure reliable sealing when the cover seals the wafer 300 in the placement groove 102 .

[0057] In some embodiments, see Figure 6 The lateral width of the slot of the mounting groove 107 is smaller than the maximum lateral width of the sealing ring 108. The mounting groove 107 is designed in a horseshoe shape. After the sealing ring 108 is installed in the mounting groove 107, it will not be separated from the mounting groove 107 when the wafer 300 is installed and disassembled, thereby avoiding the problem of loose sealing during multiple uses.

[0058] In some embodiments, see Figure 7 , a conductive ring 160 for contacting the wafer 300 is provided at the bottom of the placement groove 102, so that the charge of the conductive layer 302 on the surface of the wafer 300 is evenly distributed. A conductive block 170 is provided on the electroplating body to contact and conduct with the conductive ring 160, and the conductive block 170 is connected to a conductive column 180, and the conductive column 180 is used to connect to the negative electrode of the power supply, so as to connect the wafer 300 to the negative electrode. An anode connected to the positive electrode of the power supply is provided in the reaction chamber 101, and the anode is in contact with the plating solution, so as to realize electroplating. Please refer to the prior art for the specific principle of electroplating of the wafer 300, which will not be repeated here.

[0059] In some embodiments, see Figure 4 A pressure sensor 190 is provided at the bottom of the placement groove 102 near the side of the wafer 300. Along the moving direction of the wafer 300 in the placement groove 102, the orthographic projection of the periphery of the wafer 300 on the bottom of the placement groove 102 at least partially overlaps with the pressure sensor 190. The pressure sensor 190 can be specifically a ring-shaped thin layer pressure sensor. By providing the pressure sensor 190 to detect the pressure on the bottom of the placement groove 102, the sealing and pressing condition of the wafer 300 and the chamber body can be monitored.

[0060] In some embodiments, see Figure 4 , the electroplating body includes an anode main board 110, a reaction chamber 101 and a cathode main board 120 which are stacked and sealed. The cathode main board 120 is provided with a placement slot 102, the anode main board 110 is used to install the anode, and the anode main board 110 and the cathode main board 120 are both provided with a chamber liquid inlet 105 and a chamber liquid outlet 104, and the cover body includes an anode cover body 140 and a cathode cover body 150 which are respectively matched with the anode main board 110 and the cathode main board 120. The connection relationship between the chamber liquid inlet 105 and the chamber liquid outlet 104 of the anode main board 110 and the cathode main board 120 and the working medium switching flow path 200 is the same, please refer to the above embodiments for details, and will not be repeated here. Specifically, the two chamber liquid inlets 105 of the electroplating body are arranged relative to each other, and the two chamber liquid outlets 104 of the electroplating body are arranged relative to each other. The electroplating body and the cover body adopt the above-mentioned arrangement, which is simple in structure and can form two flow channels connecting the reaction chamber 101, which is conducive to improving the electroplating efficiency.

[0061] In some embodiments, the reaction chamber 101 is made of a flexible material, or a flexible seal is provided between the reaction chamber 101 and the anode main board 110 and the cathode main board 120. Specifically, the flexible material is a silicone ring. For example, two flexible chambers 130 are provided between the anode main board 110 and the cathode main board 120 to enclose the reaction chamber 101. Figure 8 The hollow part of the flexible cavity 130 forms a reaction chamber 101, and a fixing hole 131 may be provided on the flexible cavity 130 to be fixedly connected with the anode main board 110 and / or the cathode main board 120 by screws or the like. Specifically, the inner diameter width of the reaction chamber 101 is slightly larger than the alignment hole 103, and the depth is about 1-30 mm, preferably 5-10 mm.

[0062] In some embodiments, an overpressure warning and overpressure relief device is provided in the reaction chamber 101 to enhance safety.

[0063] The valves in the above-mentioned embodiments of the present application can specifically be electrically controlled valves to facilitate efficient control, i.e., automatic control.

[0064] Based on the wafer electroplating device provided in the above embodiments, the present invention further provides an integrated wafer electroplating method, the integrated wafer electroplating method adopts any one of the wafer electroplating devices in the above embodiments, and the integrated wafer electroplating method includes:

[0065] During the vacuuming stage, the first interface of the second switching valve 202 is connected to the third interface of the second switching valve 202, and the vacuum pump 205 is turned on to vacuumize the reaction chamber 101 to a specified pressure;

[0066] In the pre-infiltration stage, the vacuum pump 205 is closed, the third interface of the second switching valve 202 is connected to the second interface of the second switching valve 202, and the infiltration liquid connected to the second interface of the first switching valve 201 enters the reaction chamber 101. After the infiltration is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the infiltration liquid to reflux;

[0067] During the electroplating stage, the third interface of the second switching valve 202 is connected to the second interface of the second switching valve 202, the first interface of the first switching valve 201 is connected to the third interface of the first switching valve 201, the first liquid pump 203 pumps the plating solution connected to the third interface of the first switching valve 201 to the reaction chamber 101, and the second liquid pump 204 drives the plating solution to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104. After the electroplating is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the plating solution to reflux;

[0068] During the cleaning stage, the third interface of the second switching valve 202 is connected to the second interface of the second switching valve 202, the first interface of the first switching valve 201 is connected to the third interface of the first switching valve 201, the first liquid pump 203 pumps the cleaning liquid connected to the fourth interface of the first switching valve 201 to the reaction chamber 101, and the second liquid pump 204 drives the cleaning liquid to circulate between the chamber liquid inlet 105, the reaction chamber 101 and the chamber liquid outlet 104. After cleaning is completed, the first liquid pump 203 and the second liquid pump 204 reversely drive the cleaning liquid to reflux.

[0069] Since the integrated wafer electroplating method adopts the wafer electroplating device in the above embodiment, please refer to the above embodiment for the beneficial effects of the integrated wafer electroplating method.

[0070] In some embodiments, the wafer electroplating apparatus uses Figure 1 The configuration shown, the corresponding integrated wafer electroplating method comprises the following steps:

[0071] S21: In the pre-liquid filling stage, the first interface and the second interface in the first switching valve 201 are regulated to be connected, and the infiltration liquid is transported to the intermediate liquid storage tank 214 through the first liquid pump 203 and the first filtering device 212; then one of the first two-way valves 209 and one of the second two-way valves 210 are opened, and the third two-way valve 211 is opened, and the remaining first two-way valve 209 and the remaining second two-way valve 210 are closed, specifically, the first two-way valve 209 connected to the chamber liquid inlet 105 on the cathode main board 120 is opened, and the first two-way valve 209 connected to the chamber liquid inlet 105 on the anode main body is closed, and the second two-way valve 210 connected to the chamber liquid outlet 104 on the anode main board 110 is opened at the same time, and the second two-way valve 210 connected to the chamber liquid outlet 104 on the cathode main board 120 is closed, and the second interface and the third interface of the second switching valve 202 are connected to ensure that when the first liquid pump 203 is opened, the pipeline system has a smooth passage to prevent excessive hydraulic pressure in the system from causing liquid explosion problems. The second liquid pump 204 delivers a small amount of liquid in the intermediate liquid storage tank 214 to the reaction chamber 101, and then adjusts the flow direction of the second liquid pump 204 and the PID control valve 221 to make the infiltration liquid flow back to the front of the first two-way valve 209, so that this part of the pipeline is filled with infiltration liquid.

[0072] S22: In the vacuum stage, the first interface in the electrically controlled second switching valve 202 is regulated to be connected with the third interface of the second switching valve 202 and the fourth interface of the second switching valve 202 at the same time, the two first two-way valves 209 are opened, the two second two-way valves 210 are closed, the PID pneumatic regulating valve 218 is opened, and the reaction chamber 101 is evacuated under the action of the vacuum pump 205 until the vacuum pressure gauge 220 reaches the specified pressure.

[0073] S23: In the pre-wetting stage, the first two-way valve 209 is closed, and the second two-way valve 210 is opened. The liquid in the intermediate liquid storage tank 214 enters the reaction chamber 101 under the negative pressure of the chamber, so that the liquid can infiltrate the surface of the wafer 300 including the micropores on the surface of the wafer 300 (such as the blind holes of TSV). After the pre-wetting, the second liquid pump 204 is started to reversely pump the infiltration liquid from the reaction chamber 101 back to the intermediate liquid storage tank 214, and then the first interface of the first switching valve 201 is regulated to be connected with the second interface of the first switching valve 201, the first liquid pump 203 is started and the one-way valve 215 is opened, and the infiltration liquid in the intermediate liquid storage tank 214 returns to the original infiltration liquid container 206.

[0074] S24: During the electroplating stage, the first interface of the first switching valve 201 is switched to be connected with the third interface of the first switching valve 201, the first liquid pump 203 is started, the plating solution is pumped into the intermediate liquid storage tank 214 through the first filtering device 212, and the constant temperature heating device 216 is started to heat the plating solution to the required process temperature. The first interface of the second switching valve 202 is switched to be connected with the third interface of the second switching valve 202, the two first two-way valves 209 are opened, the two second two-way valves 210 are closed, the air extraction volume of the pneumatic regulating valve is adjusted, the vacuum pressure is controlled to the process value, and the vacuum time is controlled so that the residual infiltration liquid inside the reaction chamber 101 and the pipeline system is cleaned under vacuum pressure.

[0075] The second interface of the second switching valve 202 is regulated to be connected with the third interface of the second switching valve 202, the two first two-way valves 209, the two second two-way valves 210 and the third two-way valve 211 are opened, the second liquid pump 204 is started, and the plating solution is pumped into the reaction chamber 101 in the positive direction for cyclic electroplating, and the upper liquid flow rate is regulated by controlling the PID control valve 221.

[0076] After the electroplating is completed, the second liquid pump 204 is started to pump the plating solution from the reaction chamber 101 back to the intermediate liquid storage tank 214 in the reverse direction. The first interface of the first switching valve 201 is regulated to be connected with the third interface of the first switching valve 201, and the one-way valve 215 is opened, and the first liquid pump 203 is started to return the plating solution in the intermediate liquid storage tank 214 to the plating solution container 207.

[0077] S25: During the cleaning phase, the first interface of the first switching valve 201 is regulated to be connected with the fourth interface of the first switching valve 201, the pneumatic first liquid pump 203 is used to load the cleaning liquid into the intermediate liquid storage tank 214, the temperature of the constant temperature heating device 216 is regulated to the cleaning design process temperature, and then the two first two-way valves 209, the two second two-way valves 210 and the third two-way valve 211 are opened, the second liquid pump 204 is started, the cleaning liquid is circulated and cleaned, and the flow rate of the cleaning liquid is regulated by the PID control valve 221. After cleaning, the second liquid pump 204 is regulated to pump liquid in reverse to return the cleaning liquid to the intermediate liquid storage tank 214, and then the first liquid pump 203 and the one-way valve 215 are started to pump the cleaning liquid back to the corresponding container.

[0078] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0079] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer electroplating device, characterized in that: include: An integrated electroplating chamber, comprising a reaction chamber that can be sealed and connected and a placement groove for placing wafers, wherein the bottom of the placement groove is provided with an alignment hole communicating with the reaction chamber, and the integrated electroplating chamber further comprises a chamber liquid inlet and a chamber liquid outlet communicating with the reaction chamber; A working medium switching flow path is used to deliver working medium to the integrated electroplating chamber, wherein the working medium includes an immersion liquid, a plating liquid, and a cleaning liquid; The working medium switching flow path includes a first switching valve, a second switching valve, a first liquid pump and a second liquid pump, the first interface of the first switching valve is connected to the first liquid pump, the second interface of the first switching valve is used to access the immersion liquid, the third interface of the first switching valve is used to access the plating liquid, and the fourth interface of the first switching valve is used to access the cleaning liquid, and the first interface of the first switching valve can be switched and connected with the second interface of the first switching valve, the third interface of the first switching valve or the fourth interface of the first switching valve, and the first liquid pump is used to drive the working medium to enter the reaction chamber from the first interface of the first switching valve or to flow back from the reaction chamber to the first interface of the first switching valve; The second liquid pump is connected between the chamber liquid inlet and the first liquid pump, and is used to drive the working medium into the reaction chamber through the chamber liquid inlet; the first interface of the second switching valve is used to communicate with the vacuum pump, the second interface of the second switching valve is connected to the first liquid pump, the third interface of the second switching valve is connected to the chamber liquid outlet, and the third interface of the second switching valve can be switched and connected with the first interface of the second switching valve or the second interface of the second switching valve.

2. The wafer electroplating device according to claim 1, characterized in that: A first two-way valve is provided between the third interface of the second switching valve and the liquid outlet of the chamber, and a second two-way valve is provided between the liquid inlet of the chamber and the second liquid pump; A third two-way valve is provided between the second interface of the second switching valve and the second liquid pump.

3. The wafer electroplating device according to claim 1, characterized in that: A first filtering device is provided between the first liquid pump and the second liquid pump; And / or, a second filtering device is provided between the second liquid pump and the second interface of the second switching valve.

4. The wafer electroplating device according to claim 1, characterized in that: An intermediate liquid storage tank is provided between the first liquid pump and the second liquid pump, and a one-way valve is provided between the intermediate liquid storage tank and the first liquid pump to allow the working medium to flow from the intermediate liquid storage tank to the first liquid pump.

5. The wafer electroplating device according to claim 4, characterized in that: It also includes a temperature control and regulation device for performing temperature control and regulation on the working medium in the intermediate liquid storage tank.

6. The wafer electroplating device according to any one of claims 1 to 5, characterized in that: The integrated electroplating chamber is provided with a vacuum adsorption opening, which is connected to the placement groove. The second switching valve also includes a fourth interface connected to the vacuum adsorption opening, and the first interface of the second switching valve is switched and connected to the fourth interface of the second switching valve.

7. The wafer electroplating device according to claim 6, characterized in that: A fourth two-way valve is provided between the fourth interface of the second switching valve and the vacuum adsorption opening.

8. The wafer electroplating device according to any one of claims 1 to 5, characterized in that: The integrated electroplating chamber comprises: The electroplating body comprises the stacked and through-set placement groove and the reaction chamber, the bottom of the placement groove is provided with a mounting groove on the surface facing the wafer, a sealing ring is provided in the mounting groove, the sealing ring is dispersedly arranged at multiple points around the alignment hole or arranged in a whole circle, and the electroplating body is provided with the chamber liquid inlet and the chamber liquid outlet which are connected with the reaction chamber; The cover body is detachably and hermetically connected to the electroplating body, and is used to seal the wafer in the placement groove; preferably, the cover body is locked and connected to the electroplating body through a threaded structure.

9. The wafer electroplating device according to claim 8, characterized in that: The longitudinal thickness of the sealing ring is greater than the longitudinal depth of the mounting groove, and / or the transverse width of the notch of the mounting groove is less than the maximum transverse width of the sealing ring.

10. The wafer electroplating device according to claim 8, characterized in that: Along the direction from the wafer to the reaction chamber, the diameter width of the alignment hole gradually increases.

11. The wafer electroplating device according to claim 8, characterized in that: A pressure sensor is provided at the bottom of the placement groove near the wafer. Along the moving direction of the wafer in the placement groove, the orthographic projection of the periphery of the wafer on the groove bottom at least partially overlaps with the pressure sensor.

12. The wafer electroplating device according to claim 8, characterized in that: The electroplating body includes an anode main board, a reaction chamber and a cathode main board which are stacked and sealed. The cathode main board is provided with the placement groove. The anode main board is used to install the anode, and both the anode main board and the cathode main board are provided with the chamber liquid inlet and the chamber liquid outlet. The cover body includes an anode cover body and a cathode cover body which respectively cooperate with the anode main board and the cathode main board; preferably, the reaction chamber is made of flexible material, or a flexible seal is arranged between the reaction chamber and the anode main board and the cathode main board.

13. An integrated wafer electroplating method, characterized in that: A wafer electroplating device as claimed in any one of claims 1 to 12, comprising: In the vacuuming stage, the first interface of the second switching valve is connected to the third interface of the second switching valve, and the vacuum pump is turned on to evacuate the reaction chamber to a specified pressure; In the pre-infiltration stage, the vacuum pump is turned off, the third interface of the second switching valve is connected to the second interface of the second switching valve, and the second interface of the first switching valve is connected to the infiltration liquid to enter the reaction chamber. After the infiltration is completed, the first liquid pump and the second liquid pump reversely drive the infiltration liquid to reflux; During the electroplating stage, the third interface of the second switching valve is connected to the second interface of the second switching valve, the first interface of the first switching valve is connected to the third interface of the first switching valve, the first liquid pump pumps the plating solution connected to the third interface of the first switching valve to the reaction chamber, the second liquid pump drives the plating solution to circulate between the chamber liquid inlet, the reaction chamber and the chamber liquid outlet, and after the electroplating is completed, the first liquid pump and the second liquid pump reversely drive the plating solution to reflux; During the cleaning stage, the third interface of the second switching valve is connected to the second interface of the second switching valve, the first interface of the first switching valve is connected to the third interface of the first switching valve, the first liquid pump pumps the cleaning liquid connected to the fourth interface of the first switching valve to the reaction chamber, the second liquid pump drives the cleaning liquid to circulate between the chamber liquid inlet, the reaction chamber and the chamber liquid outlet, and after cleaning is completed, the first liquid pump and the second liquid pump reversely drive the cleaning liquid to reflux.

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