Deposition apparatus

Abstract

The embodiment of the invention provides a deposition device. The deposition device comprises a first cover plate, a second cover plate and a side plate, the first cover plate and the second cover plate are oppositely arranged, the side plate is arranged between the first cover plate and the second cover plate, and the first cover plate, the second cover plate and the side plate jointly define a reaction cavity; the electromagnetic assembly comprises at least one first electromagnet, the first electromagnet extends in the pointing direction from the first cover plate to the second cover plate, and the first electromagnet is arranged outside the reaction chamber and arranged on one side of the side plate in any direction perpendicular to the pointing direction; and the first controller is connected with the first electromagnet and used for independently controlling power-on and power-off of the first electromagnet and independently controlling the current of the first electromagnet.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, including but not limited to a deposition device. Background Art

[0002] In the preparation process of semiconductor structures, physical vapor deposition (PVD) is often used to prepare various film layers. The PVD process includes magnetron sputtering technology, the principle of which is to ionize gas molecules using an electric field in a high vacuum environment to generate plasma including positive ions and electrons. The positive ions fly toward the target material under the action of the electric field and bombard the target material, so that the target material particles are continuously deposited on the substrate to form a film layer.

[0003] However, the uniformity and pore-filling ability of the film layers currently prepared by the PVD process cannot meet the usage requirements, and there is an urgent need to improve the deposition equipment. Summary of the invention

[0004] In view of this, an embodiment of the present disclosure provides a deposition device.

[0005] An embodiment of the present disclosure provides a deposition device, which includes: a first cover plate, a second cover plate and a side plate, wherein the first cover plate and the second cover plate are arranged opposite to each other, the side plate is arranged between the first cover plate and the second cover plate, and the first cover plate, the second cover plate and the side plate together form a reaction chamber; an electromagnetic component, wherein the electromagnetic component includes: at least one first electromagnet, the first electromagnet extends along a pointing direction from the first cover plate to the second cover plate, the first electromagnet is arranged outside the reaction chamber and is arranged on one side of the side plate along any direction perpendicular to the pointing direction; and a first controller, the first controller is connected to the first electromagnet, and is used to independently control the power on and off of the first electromagnet, and is used to independently control the current of the first electromagnet.

[0006] In some embodiments, the electromagnetic assembly further includes: at least one connecting shaft, the connecting shaft including a first end and a second end opposite to each other in an axial direction, the first end of the connecting shaft being connected to the first electromagnet; and at least one second controller, the second controller being connected to the second end of the connecting shaft, the second controller adjusting the distance between the first electromagnet and the reaction chamber through the connecting shaft.

[0007] In some embodiments, the first electromagnet includes: a plurality of sub-electromagnets, the sub-electromagnets extending along the pointing direction, and the plurality of sub-electromagnets in the same first electromagnet are connected to each other.

[0008] In some embodiments, the connecting shaft includes: a plurality of sub-connecting shafts, the sub-connecting shafts are connected to the sub-electromagnets, and the plurality of sub-connecting shafts corresponding to the plurality of sub-electromagnets in the same first electromagnet are connected to the same second controller; the second controller adjusts the distance between the sub-electromagnet and the reaction chamber through the sub-connecting shafts.

[0009] In some embodiments, the first electromagnet includes: a wire extending along the pointing direction, and two opposite ends of the wire along the extending direction are respectively connected to a power source.

[0010] In some embodiments, the first electromagnet includes: an iron core extending along the pointing direction; a coil wound around the outside of the iron core, with both ends of the coil respectively connected to a power source.

[0011] In some embodiments, the electromagnetic assembly includes: a plurality of the first electromagnets, and the plurality of the first electromagnets are arranged along a circumferential direction of the reaction chamber.

[0012] In some embodiments, the deposition device further includes: at least one second electromagnet, the second electromagnet is disposed outside the reaction chamber, the second electromagnet is a ring magnet, and is disposed around the outer side of the side plate.

[0013] In some embodiments, the deposition device further includes: at least one third electromagnet, wherein the third electromagnet is disposed outside the reaction chamber and disposed on one side of the first cover plate along the pointing direction.

[0014] In some embodiments, the deposition device further includes: a target material, which is disposed in the reaction chamber and connected to the first cover plate; a base, which is disposed in the reaction chamber and is used to support a substrate, and the base and the target material are relatively arranged along the pointing direction.

[0015] The embodiment of the present disclosure provides a deposition device. The deposition device includes: a first cover plate, a second cover plate and a side plate, the first cover plate and the second cover plate are arranged oppositely, the side plate is arranged between the first cover plate and the second cover plate, and the first cover plate, the second cover plate and the side plate together enclose a reaction chamber; an electromagnetic assembly, the electromagnetic assembly includes: at least one first electromagnet, the first electromagnet extends along the pointing direction from the first cover plate to the second cover plate, the first electromagnet is arranged outside the reaction chamber, and is arranged on one side of the side plate along any direction perpendicular to the pointing direction; a first controller, the first controller is connected to the first electromagnet, and is used to independently control the power on and off of the first electromagnet, and to independently control the current of the first electromagnet. In the embodiment of the present disclosure, at least one first electromagnet is arranged on one side of the side plate along any direction perpendicular to the pointing direction, and the first controller is used to independently control the power on and off of each first electromagnet, and independently control the current of each first electromagnet, so that the influence of the magnetic field generated by different first electromagnets on different regions in the reaction chamber can be independently controlled, and the differentiated adjustment of different regions can be achieved, thereby improving the uniformity and hole filling ability of the film layer prepared by the deposition device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A cross-sectional view of a deposition apparatus is provided for some examples;

[0017] Figure 2 A cross-sectional view of a deposition apparatus provided for an embodiment of the present disclosure;

[0018] Figure 3 A partial cross-sectional view of an electromagnetic assembly provided for some embodiments of the present disclosure;

[0019] Figure 4 A partial top view of a first electromagnet provided for some embodiments of the present disclosure;

[0020] Figure 5 A schematic diagram of the magnetic field direction of a first electromagnet provided in some embodiments of the present disclosure;

[0021] Figure 6 Figure (a) is a partial top view of the second electromagnet provided in some embodiments of the present disclosure. Figure 6 Figure (b) is a schematic diagram of the magnetic field of the second electromagnet provided in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0022] The following will be combined with the embodiments of the present disclosure and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0023] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0024] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0025] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0026] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0027] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0028] In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0029] refer to Figure 1 , Figure 1 A cross-sectional view of a deposition apparatus is provided for some examples. Figure 1 As shown, the deposition device 100 may include: a top plate 104, a bottom plate 106 and a side plate 108, the top plate 104 and the bottom plate 106 are arranged opposite to each other, the side plate 108 is arranged between the top plate 104 and the bottom plate 106, and the top plate 104, the bottom plate 106 and the side plate 108 together form a reaction chamber 102; a target material 110 arranged in the reaction chamber 102, the target material 110 is connected to the top plate 104, and the top plate 104 can be connected to a DC power supply; a base 112 is arranged in the reaction chamber 102, the base 112 is used to carry a substrate, and the target material 110 and the base 112 are arranged opposite to each other, and the base 112 can be connected to an AC power supply.

[0030] In order to improve the deposition process, Figure 1 The deposition apparatus shown is modified.

[0031] In some embodiments, the deposition distance can be increased, that is, the distance between the top plate 104 (or, the target material 110) and the bottom plate 106 (or, the base 112) is increased. For example, the deposition distance is increased from 190 mm to 240 mm. In this way, the target material with a larger incident angle sputtered from the target material 110 can be screened out to improve the hole filling ability. However, this method of increasing the deposition distance often reduces the deposition rate, resulting in poor uniformity of the prepared film layer. In other embodiments, an electromagnet can be set on the top plate 104, and the magnetic field generated by the electromagnet is used to bind the charged particles to increase the density of the plasma, thereby increasing the deposition rate. However, with the increasing requirements of semiconductor processes, the requirements for deposition uniformity and hole filling ability are getting higher and higher, and the current deposition device cannot meet the use requirements.

[0032] In view of this, an embodiment of the present disclosure provides a deposition device.

[0033] refer to Figure 2 , Figure 2 A cross-sectional view of a deposition device provided in an embodiment of the present disclosure. Figure 2 As shown, the embodiment of the present disclosure provides a deposition device, the deposition device 200 includes: a first cover plate 204, a second cover plate 206 and a side plate 208, the first cover plate 204 and the second cover plate 206 are arranged opposite to each other, the side plate 208 is arranged between the first cover plate 204 and the second cover plate 206, the first cover plate 204, the second cover plate 206 and the side plate 208 together enclose a reaction chamber 202; an electromagnetic assembly 230, the electromagnetic assembly 230 includes: at least one first electromagnet 214 (such as Figure 2 The first electromagnet 214 extends along the direction from the first cover plate 204 to the second cover plate 206, and the first electromagnet 214 is arranged outside the reaction chamber 202, and is arranged on one side of the side plate 208 along any direction perpendicular to the direction; the first controller 216 is connected to the first electromagnet 214, and is used to independently control the power on and off of the first electromagnet 214, and is used to independently control the current of the first electromagnet 214.

[0034] The direction in which the first cover plate 204 points to the second cover plate 206 can be defined as the Z direction, that is, the first cover plate 204 and the second cover plate 206 are arranged relatively along the Z direction. An intersecting X direction and Y direction are defined in a plane perpendicular to the Z direction. In some embodiments, any two of the X direction, the Y direction, and the Z direction are perpendicular to each other. The following description will be made by taking the example that any two of the X direction, the Y direction, and the Z direction are perpendicular to each other.

[0035] Here, the first cover plate 204 and the second cover plate 206 are arranged opposite to each other along the Z direction, the first cover plate 204 can be called a top cover plate, and the second cover plate 206 can be called a bottom cover plate. The side plate 208 includes a top and a bottom arranged opposite to each other along the Z direction, the top of the side plate 208 can contact the first cover plate 204, and the bottom of the side plate 208 can contact the second cover plate 206. The first cover plate 204, the second cover plate 206 and the side plate 208 can together enclose the reaction chamber 202, and the reaction chamber 202 can be a closed chamber.

[0036] Here, the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to the Z direction may include a circle, a square or other shapes, etc., and the present disclosure has no special limitation on the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to the Z direction. The first cover plate 204, the second cover plate 206 and the side plate 208 may use any material known in the art, and the present disclosure has no special limitation on this. In some embodiments, when the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to the Z direction is a circle, the shapes of the first cover plate 204 and the second cover plate 206 may both be a circle, and the cross-sectional shape of the side plate 208 along the direction perpendicular to the Z direction is a circular ring, and the width of the circular ring is the thickness of the side plate 208. In other embodiments, when the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to the Z direction is a square, the shapes of the first cover plate 204 and the second cover plate 206 may both be a square, and the cross-sectional shape of the side plate 208 along the direction perpendicular to the Z direction is a square ring, and the width of the square ring is the thickness of the side plate 208.

[0037] In some embodiments, when the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to the Z direction is circular, the first electromagnet 214 is disposed on one side of the reaction chamber 202 along the radial direction. For example, the first electromagnet 214 may be disposed on one side of the reaction chamber 202 along the X direction, or the first electromagnet 214 may be disposed on one side of the reaction chamber 202 along the Y direction.

[0038] Here, the first electromagnet 214 extends along the Z direction, and the first electromagnet 214 is arranged on one side of the side wall of the reaction chamber 202 in any direction. The present disclosure has no special limitation on the number of the first electromagnets 214 in the deposition device 200, and can be, for example, 1, 2, 3, 4, 5 or more. The present disclosure has no special limitation on the setting position of each first electromagnet 214 in the XY plane. In some embodiments, the setting position of each first electromagnet 214 in the XY plane can be determined according to the requirements of different regions in the reaction chamber 202 for the magnetic field. In other embodiments, a fixed number of first electromagnets 214 can be arranged on the outside of the side wall of the reaction chamber 202, and the number of the first electromagnets 214 can be selected as a whole or individually according to the actual uniformity graph to meet the requirements of different regions in the reaction chamber 202 for the magnetic field. The cross-sectional shape of the first electromagnet 214 along the direction perpendicular to the Z direction includes a circle, a square or other shapes, and the present disclosure has no special limitation on the cross-sectional shape of the first electromagnet 214 along the direction perpendicular to the Z direction.

[0039] Here, the first controller 216 can determine whether the first electromagnet 214 will generate a magnetic field by controlling the power on and power off of the first electromagnet 214; and the first controller 216 can also determine the magnetic field strength generated by the first electromagnet 214 by controlling the current of the first electromagnet 214. The first controller 216 can be used to independently control the power on and power off of each first electromagnet 214, and independently control the current size of the first electromagnet 214. In other words, whether different first electromagnets 214 are in a power-on state or a power-off state is independent of each other. For example, all first electromagnets 214 are in a power-on state, or some first electromagnets 214 are in a power-on state and some first electromagnets are in a power-off state, or all first electromagnets are in a power-off state. And the current sizes of different first electromagnets 214 are also independent of each other. For example, the currents of all first electromagnets 214 can be the same, or the currents of some first electromagnets 214 are the same and the currents of some first electromagnets 214 are different, or the currents of all first electromagnets 214 are different.

[0040] In the embodiment of the present disclosure, at least one first electromagnet 214 is arranged on one side of the side plate, and the first controller 216 is used to independently control the power on and off of each first electromagnet 214, and independently control the current of each first electromagnet 214, so that the influence of the magnetic field generated by different first electromagnets 214 on different areas in the reaction chamber 202 can be independently controlled, and differentiated adjustments of different areas can be achieved, thereby improving the uniformity of the film layer prepared by the deposition device 200, and increasing the ionization degree of the plasma in the reaction chamber 202, thereby improving the hole filling ability of the film layer prepared by the deposition device 200.

[0041] In some embodiments, the electromagnetic assembly 230 further includes: at least one connecting shaft 218 (such as Figure 2 The connecting shaft 218 includes a first end and a second end opposite to each other in the axial direction, and the first end of the connecting shaft 218 is connected to the first electromagnet 214; at least one second controller 220 is connected to the second end of the connecting shaft 218, and the second controller 220 adjusts the distance between the first electromagnet 214 and the reaction chamber 202 through the connecting shaft 218.

[0042] Here, the axial direction of the connecting shaft 218 may be any direction perpendicular to the Z direction. In some embodiments, when the cross-sectional shape of the reaction chamber 202 perpendicular to the Z direction is circular, the axial direction of the connecting shaft 218 may be along the radial direction of the reaction chamber 202 .

[0043] Here, the second controller 220 can determine the degree of influence of the magnetic field strength generated by the first electromagnet 214 on the reaction chamber 202 by controlling the distance between the first electromagnet 214 and the reaction chamber 202. When a certain area in the reaction chamber 202 requires a greater magnetic field strength, the current of the first electromagnet 214 can be increased, thereby increasing the magnetic field strength generated by the first electromagnet 214; or, the distance between the first electromagnet 214 and the reaction chamber 202 can be reduced, thereby increasing the degree of influence of the magnetic field generated by the first electromagnet 214 on the reaction chamber 202. Conversely, when a certain area in the reaction chamber 202 requires a smaller magnetic field strength, the current of the first electromagnet 214 can be reduced, thereby reducing the magnetic field strength generated by the first electromagnet 214; or, the distance between the first electromagnet 214 and the reaction chamber 202 can be increased, thereby reducing the degree of influence of the magnetic field generated by the first electromagnet 214 on the reaction chamber 202.

[0044] In the embodiment of the present disclosure, the second controller 220 can be used to control the distance between the first electromagnet 214 and the reaction chamber 202, and the degree to which different areas in the reaction chamber 202 are affected by the magnetic field generated by the first electromagnet 214 can be adjusted, thereby achieving differentiated adjustments in different areas, which is beneficial to improving the uniformity and hole filling ability of the film layer prepared by using the deposition device 200.

[0045] In some embodiments, the second controller 220 can control the connecting shaft 218 in a pneumatic or electric manner. In the pneumatic control mode, compressed air or other gas is used as a power source. When the gas is compressed, energy can be stored. When the gas is released, the energy can be converted into power to drive the connecting shaft to work. In the electric control mode, electrical energy is used as a power source to convert electrical energy into mechanical energy.

[0046] refer to Figure 3 , Figure 3 A partial cross-sectional view of an electromagnetic assembly provided in some embodiments of the present disclosure. Figure 2 and Figure 3 As shown, in some embodiments, each first electromagnet 214 may include: a plurality of sub-electromagnets 222 , the sub-electromagnets 222 extending along the Z direction, and the plurality of sub-electromagnets 222 in the same first electromagnet 214 are connected to each other.

[0047] Figure 2 It is illustrated that the distances between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202 are the same, that is, the orthographic projections of the multiple sub-electromagnets 222 in the same first electromagnet 214 on the XY plane overlap. Figure 3It is illustrated that the distances between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202 are different, that is, the orthographic projections of the multiple sub-electromagnets 222 in the same first electromagnet 214 on the XY plane at least partially overlap.

[0048] In some embodiments, the connecting shaft 218 includes: a plurality of sub-connecting shafts 224, the sub-connecting shafts 224 are connected to the sub-electromagnets 222, and the plurality of sub-connecting shafts 224 corresponding to the plurality of sub-electromagnets 222 in the same first electromagnet 214 are connected to the same second controller 220; the second controller 220 adjusts the distance between the sub-electromagnets 222 and the reaction chamber 202 through the sub-connecting shafts 224.

[0049] Here, for the same first electromagnet 214, the currents of the multiple sub-electromagnets 222 in the first electromagnet 214 are the same. The second controller 220 can be used to independently control the distances between different sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202, and determine the degree of influence of the magnetic field strength generated by the sub-electromagnet 222 on the reaction chamber 202. When a certain area in the reaction chamber 202 requires a greater magnetic field strength, the distance between the sub-electromagnet 222 and the reaction chamber 202 can be reduced, thereby increasing the degree of influence of the magnetic field generated by the sub-electromagnet 222 on the reaction chamber 202. When a certain area in the reaction chamber 202 requires a smaller magnetic field strength, the distance between the sub-electromagnet 222 and the reaction chamber 202 can be increased, thereby reducing the degree of influence of the magnetic field generated by the sub-electromagnet 222 on the reaction chamber 202.

[0050] Here, the first electromagnet 214 corresponds to the second controller 220 one by one, that is, the number of the first electromagnet 214 can be the same as the number of the second controller 220. In the same first electromagnet 214, the sub-electromagnet 222 corresponds to the sub-connecting shaft 224 one by one, that is, the number of the sub-electromagnet 222 is the same as the number of the sub-connecting shaft 224.

[0051] In some embodiments, the electromagnetic assembly 230 includes: a plurality of first electromagnets 214 arranged along the circumference of the reaction chamber 202. Here, the plurality of first electromagnets 214 may be arranged along the circumference of the outer side of the side plate 208, that is, the first electromagnets 214 surround the outer side of the side plate 208.

[0052] In some embodiments, the plurality of first electromagnets 214 may be arranged uniformly or non-uniformly. Uniform arrangement means that the distance between any two adjacent first electromagnets 214 is the same. It should be noted that, at this time, the setting position of the first electromagnet 214 refers to the initial position of the first electromagnet 214, and the distance between the first electromagnet 214 and the reaction chamber 202 can still be adjusted by the second controller 220 and the connecting shaft 218.

[0053] refer to Figure 4 , Figure 4 A partial top view of a first electromagnet provided in some embodiments of the present disclosure. Figure 4 As shown, the cross-section of the reaction chamber 202 perpendicular to the Z direction is circular. A three-dimensional coordinate system can be established with the center of the reaction chamber 202 (or the center of the circle) as the origin O. In the coordinate system, the X-axis extends along the X-direction, the Y-axis extends along the Y-direction, and the Z-axis extends along the Z-direction. The X-axis, the Y-axis, and the Z-axis intersect at the origin O. Figure 4 Eight evenly arranged first electromagnets 214 are illustrated. The eight first electromagnets 214 are arranged in a circle to surround the side plate 208 .

[0054] It should be noted that the coordinate position of the first electromagnet 214 in the three-dimensional coordinate system can be determined as (x1, y1, z1), the number of sub-electromagnets 222 included in the first electromagnet 214 can be determined as n, n is an integer greater than or equal to 1, and the coordinate values ​​of each sub-electromagnet 222 along the Z direction are z11, z12, z13, ..., z1n. Correspondingly, the coordinate position of the first sub-electromagnet 222 is (x1, y1, z11), the coordinate position of the second sub-electromagnet 222 is (x1, y1, z12), ..., and the coordinate position of the nth sub-electromagnet 222 is (x1, y1, z1n). Considering that the first electromagnet 214 extends along the Z direction, for a single first electromagnet 214, the second controller 220 adjusts the abscissa value x1 and the ordinate value y1 of the first electromagnet 214, and the abscissa values ​​x1 of the multiple sub-electromagnets 222 in the same first electromagnet 214 are all the same, and the ordinate values ​​y1 of the multiple sub-electromagnets 222 are all the same. For a certain area in the reaction chamber 202 corresponding to the first electromagnet 214, the magnetic field changes at different height positions along the Z direction are the same.

[0055] Furthermore, the second controller 220 can also be used to adjust the distance between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202. The second controller 220 adjusts the horizontal coordinate value x1 and the vertical coordinate value y1 of each sub-electromagnet 222. The horizontal coordinate values ​​x1 of the multiple sub-electromagnets 222 in the same first electromagnet 214 can be the same or different, and the vertical coordinate values ​​y1 of the multiple sub-electromagnets 222 can be the same or different. For a certain area in the reaction chamber 202 corresponding to the first electromagnet 214, the magnetic field changes at different height positions along the Z direction are different.

[0056] Since the multiple sub-electromagnets 222 in the same first electromagnet 214 are connected to each other, the space for adjusting the position of the sub-electromagnets 222 is smaller. By adjusting the distance between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202, differential adjustment can be achieved for a certain area in the reaction chamber 202 at different height positions along the Z direction, thereby increasing the adjustment means in the vertical direction (i.e., the Z direction).

[0057] In this article, "electromagnet" refers to a component that generates a magnetic field around it when power is turned on and the magnetic field disappears when power is turned off. In addition, the magnetic field strength of the magnetic field generated by the electromagnet can be adjusted by adjusting the magnitude of the current.

[0058] In some embodiments, the first electromagnet 214 may include: a wire extending along the Z direction, and two opposite ends of the wire along the extending direction are respectively connected to a power source.

[0059] Here, the wire extends in the Z direction. When the wire is energized, the direction of the current in the wire is in the Z direction. The Ampere's law can be used to determine the direction of the magnetic field generated by the current in the energized wire. Hold the energized straight wire with your right hand, let your thumb point in the direction of the current, and the direction of the four fingers is the direction of the magnetic flux lines.

[0060] refer to Figure 5 , Figure 5 Schematic diagram of the magnetic field direction of the first electromagnet provided in some embodiments of the present disclosure. Figure 5 As shown, in some embodiments, the direction of the current in the wire is the negative direction of the Z direction, that is, perpendicular to the inner direction of the paper surface, then the direction of the magnetic field generated by the current-carrying wire is clockwise.

[0061] In other embodiments, the direction of the current in the wire is the positive direction of the Z direction, that is, the direction perpendicular to the paper and outward, then the direction of the magnetic field generated by the current-carrying wire is counterclockwise.

[0062] In some embodiments, the first electromagnet 214 includes: an iron core extending along the Z direction; a coil wound around the outside of the iron core, with both ends of the coil respectively connected to a power source.

[0063] Here, the iron core extends in the Z direction, and the coil is wound on the outside of the iron core. The coil can be wound on the outside of the iron core in a clockwise or counterclockwise direction. The Ampere's law can be used to determine the direction of the magnetic field generated by the current in the energized solenoid. Hold the energized solenoid with your right hand, so that the four fingers are bent in the same direction as the current, and the end pointed by the thumb is the N pole of the energized solenoid.

[0064] In the disclosed embodiment, the first electromagnet 214 may include a wire or a solenoid. The magnetism of the first electromagnet 214 may be controlled by turning on or off the power, and the magnetism of the first electromagnet 214 may be controlled by the magnitude of the current.

[0065] refer to Figure 6 As shown in Figure (a), Figure 6 Figure (a) is a partial top view of the second electromagnet provided in some embodiments of the present disclosure. Figure 2 and Figure 6 As shown in FIG. (a), in some embodiments, the deposition device 200 further includes: at least one second electromagnet 226, which is disposed outside the reaction chamber 202, and is a ring-shaped magnet disposed around the outside of the side plate 208. The first controller 216 can also be connected to the second electromagnet 226 to independently control the power on and off of the second electromagnet 226, and to independently control the current of the second electromagnet 226.

[0066] refer to Figure 6 As shown in Figure (b), Figure 6 Figure (b) is a schematic diagram of the magnetic field of the second electromagnet provided in some embodiments of the present disclosure. Figure 6 As shown in FIG. (b), the second electromagnet 226 may be a ring magnet, and the magnetic field generated by the second electromagnet 226 when it is energized has the same influence on all regions in the reaction chamber 202 that are at the same distance from the second electromagnet 226. For example, Figure 4 The cross-section of the reaction chamber 202 perpendicular to the Z direction is circular, and the second electromagnet 226 is in a circular shape. Each point at the same distance from point O in the reaction chamber is affected by the magnetic field generated by the second electromagnet 226 to the same extent.

[0067] In some embodiments, the number of the second electromagnet 226 may be one or more, and the plurality of second electromagnets 226 may be arranged at intervals along the Z direction. Figure 2 Two second electromagnets 226 are shown by way of example.

[0068] In some embodiments, the first electromagnet 214 may be disposed between the reaction chamber 202 and the second electromagnet 226; and / or, the second electromagnet 226 may be disposed between the reaction chamber 202 and the first electromagnet 214. Differential adjustment of different areas in the reaction chamber 202 can be achieved by disposing the first electromagnet 214 on either side of the side plate 208.

[0069] In some embodiments, the deposition device 200 further includes: at least one third electromagnet 228, which is disposed outside the reaction chamber 202 and on one side of the first cover plate 204 along the Z direction. The first controller 216 can also be connected to the third electromagnet 228 to independently control the power on and off of the third electromagnet 228, and to independently control the current of the third electromagnet 228.

[0070] The present disclosure does not specifically limit the number of the third electromagnets 228 in the deposition device, and may be, for example, 1, 2, 3, 4, 5 or more. The present disclosure does not specifically limit the location of each third electromagnet 228 in the XY plane. The third electromagnets 228 may be arranged in a circle, or the third electromagnets 228 may be arranged in an array along the X direction and the Y direction. The cross-sectional shape of the third electromagnet 228 along the direction perpendicular to the Z direction includes a circle, a square or other shapes, and the present disclosure does not specifically limit the cross-sectional shape of the third electromagnet 228 along the direction perpendicular to the Z direction.

[0071] In some embodiments, the deposition device 200 further includes: at least one fourth electromagnet, which is disposed in the base 212. The first controller 216 can also be connected to the fourth electromagnet to independently control the power on and off of the fourth electromagnet and to control the current of the fourth electromagnet.

[0072] The present disclosure does not specifically limit the number of the fourth electromagnets in the deposition device, which may be, for example, 1, 2, 3, 4, 5 or more. The present disclosure does not specifically limit the location of each first electromagnet 214 in the XY plane. The fourth electromagnets may be arranged in a circle, or the fourth electromagnets may be arranged in an array along the X direction and the Y direction. The cross-sectional shape of the fourth electromagnet along the direction perpendicular to the Z direction includes a circle, a square or other shapes, and the present disclosure does not specifically limit the cross-sectional shape of the fourth electromagnet along the direction perpendicular to the Z direction.

[0073] In some embodiments, the deposition device 200 may further include: a vacuum pump, which is connected to the reaction chamber 202 and is used to extract the air inside the reaction chamber 202 to form a vacuum environment in the reaction chamber 202. Here, during the deposition process, the inert gas needs to be ionized to form a plasma including gas positive ions and electrons. The inert gas used for ionization may include, but is not limited to, argon (Ar), krypton (Kr), or xenon (Xe).

[0074] like Figure 2As shown, in some embodiments, the deposition device 200 may further include: a target 210, which is disposed in the reaction chamber 202 and connected to the first cover plate 204; a base 212, which is disposed in the reaction chamber 202 and is used to support the substrate, and the base 212 and the target 210 are relatively arranged along the Z direction.

[0075] Here, the target 210 is connected to the first cover plate 204, and the target 210 is disposed on the side of the first cover plate 204 close to the second cover plate 206. The target 210 can be bonded to the first cover plate 204 using any suitable bonding method. The bonding method may include but is not limited to diffusion bonding or welding. The target 210 can be formed of any sputterable material known in the art, and the target 210 may include but is not limited to aluminum, copper, cobalt, tantalum, platinum, gold, silver, lead or other alloys.

[0076] It should be noted that magnetron sputtering technology is a process in which energetic plasma strikes the target material 210, causing atoms on the surface of the target material 210 to radiate and adhere to the substrate to form a film layer. In some embodiments, the first cover plate 204 can be electrically connected to a DC power supply, which is called DC sputtering. In other embodiments, the first cover plate 204 can be electrically connected to a radio frequency current, which is called radio frequency sputtering.

[0077] Here, the base 212 may include an electrostatic chuck, which may support and fix the substrate by electrostatic adsorption.

[0078] In some embodiments, the deposition device 200 may further include: a radio frequency power matcher and an alternating current power supply. The alternating current power supply may be electrically connected to the electrostatic chuck through the radio frequency power matcher to provide electrical energy to the electrostatic chuck.

[0079] Here, the substrate may include a wafer at any stage in a semiconductor manufacturing process. In some embodiments, the substrate may include: a wafer; a dielectric layer formed on the wafer; and / or a conductive layer formed on the wafer. The present disclosure does not specifically limit the number and type of material layers included in the substrate. In some embodiments, the substrate may include any material used to manufacture electronic components in integrated circuits, where the electronic components may include but are not limited to transistors, diodes, lasers, capacitors, or any other electronic components known in the art.

[0080] In the disclosed embodiment, the magnetic field generated by the electromagnet can act on the plasma in the reaction chamber to control the motion trajectory of the plasma during the deposition process. The third electromagnet 228 is arranged on the first cover plate 204. From the perspective of physical position, the distance between the third electromagnet 228 and the target 210 is less than the distance between the third electromagnet 228 and the base 212. The magnetic field generated by the third electromagnet 228 focuses more on the motion trajectory of the plasma at the time of excitation. The fourth electromagnet is arranged in the base 212. From the perspective of physical position, the distance between the fourth electromagnet and the base 212 is less than the distance between the fourth electromagnet and the target 210. The magnetic field generated by the fourth electromagnet focuses more on the motion trajectory of the plasma at the time of deposition. Compared with the third electromagnet 228 acting on the plasma at the time of excitation, and the fourth electromagnet acting on the plasma at the time of deposition, the first electromagnet 214 is arranged on either side of the side plate 208, acting on the trajectory of the plasma in the reaction chamber 202 during the motion process, which can better control the motion trajectory of the plasma.

[0081] In the disclosed embodiment, the second electromagnet 226 is arranged around the outside of the side plate 208, and the magnetic field generated by the second electromagnet 226 is more focused on the trajectory of the plasma in the reaction chamber 202 during the movement. Among them, the second electromagnet 226 is a ring-shaped electromagnet, and the ring-shaped electromagnet has the same effect on different areas in the reaction chamber, and it is difficult to achieve differentiated adjustment of different areas. Compared with the second electromagnet 226 being a ring-shaped electromagnet, the first electromagnet 214 extends along the Z direction and is arranged on either side of the side plate 208. The influence of the magnetic field generated by different first electromagnets 214 on different areas in the reaction chamber 202 can be independently controlled to achieve differentiated adjustment of different areas, thereby improving the uniformity and hole filling ability of the film layer prepared by the deposition device.

[0082] It should be noted that the first controller 216 and the second controller 220 are divided only according to the difference in function. The function of the first controller 216 includes controlling the power on and off of the first electromagnet 214, and controlling the current in the first electromagnet 214; the function of the second controller 220 includes controlling the distance between the first electromagnet 214 and the reaction chamber 202. In some embodiments, the first controller 216 and the second controller 220 can be implemented by software, hardware or a combination thereof. The first controller 216 and the second controller 220 can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to each controller. The above division into the first controller and the second controller according to different functions is exemplary, and is only a division of a logical function. There may be other division methods in actual execution.

[0083] The disclosed embodiment also provides a computer device, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the above-mentioned control of powering on and off of each electromagnet and the control of the current of each electromagnet can be realized, and the above-mentioned control of the distance between multiple sub-electromagnets in the first electromagnet and the reaction chamber can also be realized.

[0084] The embodiment of the present disclosure also provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the power on and off of each electromagnet can be controlled, and the current of each electromagnet can be controlled. The distance between the multiple sub-electromagnets in the first electromagnet and the reaction chamber can also be controlled.

[0085] Some or all of the steps in the above embodiments may be completed by instructing the relevant hardware through a computer program, and the computer program may be stored in a non-volatile memory, or may be temporarily stored in a volatile memory during use. The non-volatile memory may include a read-only memory (ROM) or a flash memory, and the volatile memory may include a random access memory (RAM), for example, a static random access memory (SRAM) or a dynamic random access memory (DRAM).

[0086] The embodiment of the present disclosure provides a deposition device. The deposition device includes: a first cover plate, a second cover plate and a side plate, the first cover plate and the second cover plate are arranged oppositely, the side plate is arranged between the first cover plate and the second cover plate, and the first cover plate, the second cover plate and the side plate together enclose a reaction chamber; an electromagnetic assembly, the electromagnetic assembly includes: at least one first electromagnet, the first electromagnet extends along the pointing direction from the first cover plate to the second cover plate, the first electromagnet is arranged outside the reaction chamber, and is arranged on one side of the side plate along any direction perpendicular to the pointing direction; a first controller, the first controller is connected to the first electromagnet, and is used to independently control the power on and off of the first electromagnet, and to independently control the current of the first electromagnet. In the embodiment of the present disclosure, at least one first electromagnet is arranged on one side of the side plate along any direction perpendicular to the pointing direction, and the first controller is used to independently control the power on and off of each first electromagnet, and independently control the current of each first electromagnet, so that the influence of the magnetic field generated by different first electromagnets on different regions in the reaction chamber can be independently controlled, and the differentiated adjustment of different regions can be achieved, thereby improving the uniformity and hole filling ability of the film layer prepared by the deposition device.

[0087] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0088] The above description is only a preferred embodiment of the present disclosure, and does not limit the patent scope of the present disclosure. All equivalent structural changes made by using the contents of the present disclosure and the drawings under the inventive concept of the present disclosure, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present disclosure.

Claims

1. A deposition device, characterized in that: The deposition device comprises: A first cover plate, a second cover plate and a side plate, wherein the first cover plate and the second cover plate are arranged opposite to each other, the side plate is arranged between the first cover plate and the second cover plate, and the first cover plate, the second cover plate and the side plate together enclose a reaction chamber; An electromagnetic assembly, the electromagnetic assembly comprising: at least one first electromagnet, the first electromagnet extending along a direction from the first cover plate to the second cover plate, the first electromagnet being arranged outside the reaction chamber and arranged on one side of the side plate along any direction perpendicular to the direction; A first controller is connected to the first electromagnet and is used to independently control the power on and power off of the first electromagnet and to independently control the current of the first electromagnet.

2. The deposition device according to claim 1, characterized in that: The electromagnetic assembly further comprises: at least one connecting shaft, the connecting shaft comprising a first end and a second end opposite to each other in an axial direction, the first end of the connecting shaft being connected to the first electromagnet; At least one second controller is connected to the second end of the connecting shaft, and the second controller adjusts the distance between the first electromagnet and the reaction chamber through the connecting shaft.

3. The deposition device according to claim 2, characterized in that: The first electromagnet comprises: A plurality of sub-electromagnets are provided, wherein the sub-electromagnets extend along the pointing direction, and the plurality of sub-electromagnets in the same first electromagnet are connected to each other.

4. The deposition device according to claim 3, characterized in that: The connecting shaft comprises: a plurality of sub-connecting shafts, the sub-connecting shafts are connected to the sub-electromagnets, and the plurality of sub-connecting shafts corresponding to the plurality of sub-electromagnets in the same first electromagnet are connected to the same second controller; The second controller adjusts the distance between the sub-electromagnet and the reaction chamber through the sub-connection shaft.

5. The deposition device according to claim 1, characterized in that: The first electromagnet comprises: A conducting wire extends along the pointing direction, and two opposite ends of the conducting wire along the extending direction are respectively connected to a power source.

6. The deposition device according to claim 1, characterized in that: The first electromagnet comprises: An iron core extending along the pointing direction; The coil is wound around the outside of the iron core, and two ends of the coil are respectively connected to a power source.

7. The deposition device according to claim 1, characterized in that: The electromagnetic assembly comprises: A plurality of the first electromagnets are arranged along a circumferential direction of the reaction chamber.

8. The deposition device according to claim 1, characterized in that: The deposition device further comprises: At least one second electromagnet, the second electromagnet is arranged outside the reaction chamber, the second electromagnet is a ring magnet, and is arranged around the outer side of the side plate.

9. The deposition device according to claim 1, characterized in that: The deposition device further comprises: At least one third electromagnet is disposed outside the reaction chamber and on one side of the first cover plate along the pointing direction.

10. The deposition device according to any one of claims 1 to 9, characterized in that: The deposition device further comprises: A target material, wherein the target material is disposed in the reaction chamber and connected to the first cover plate; A base is disposed in the reaction chamber and is used to carry a substrate. The base and the target are disposed relatively to each other along the pointing direction.

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