Wafer adsorption device, purging disc and semiconductor process equipment

Abstract

The invention discloses a wafer adsorption device, a purging disc and semiconductor process equipment, and the wafer adsorption device comprises a first disc body which comprises a first surface and a second surface which are oppositely arranged; the arm rod is hollow, one end of the arm rod penetrates from the center of the first surface to the second surface, and the other end of the arm rod is used for being connected with a mechanical arm and an air extractor, so that the second surface of the first disc body is subjected to air extraction through the air extractor via the arm rod; the at least two limiting assemblies are uniformly arranged at intervals along the edge of the first disc body and protrude out of the second surface; the limiting assembly comprises a clamping face facing the center of the first disc body. The intersecting lines of the plurality of planes parallel to the second surface and the clamping surface form a plurality of arcs, the radiuses of the plurality of arcs are gradually increased from one end close to the second surface to one end far away from the second surface, the minimum radius of the plurality of arcs is smaller than the radius of the wafer, and the maximum radius of the plurality of arcs is larger than the radius of the wafer. The wafer can be prevented from being in large-area contact with the first disc body, and the wafer is prevented from being crushed.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer adsorption device, a purge plate and semiconductor process equipment. Background Art

[0002] The multi-wafer silicon epitaxial chemical vapor deposition (CVD) equipment is the core equipment for preparing silicon epitaxial wafers. It is mainly used to epitaxially grow a new single crystal layer (i.e., epitaxial layer) on a single crystal silicon substrate with the required conductivity type, resistivity, thickness, lattice structure and integrity. The increase of micro defects in the epitaxial layer will seriously reduce the lifetime of free carriers, increase the electron capture rate in the device, and make the current amplification performance of the device worse, the frequency performance worse, and some defects will lead to increased leakage current of power devices, reduced breakdown voltage, etc. Therefore, it is necessary to strictly control each process step in the wafer processing process to reduce the generation of defects, especially in the wafer transfer process.

[0003] Figure 1 It is a schematic diagram of an existing vacuum hand tray for adsorbing wafers. The vacuum hand tray 10a is arranged at the end of a robot (not shown in the figure). The vacuum hand tray 10a uses negative pressure adsorption to adsorb wafer 101a and transfer the wafer through the robot. That is, a gas circuit composed of an air pump, a valve, etc. is placed inside the robot to form a continuous vacuum above the vacuum hand tray 10a, and the wafer 101a is adsorbed and fixed to achieve wafer transfer.

[0004] When taking the wafer, the close fit between the vacuum hand plate 10a and the wafer 101a ensures a stable negative pressure, but it may also cause pressure damage to the uneven position of the surface of the wafer 101a. The particles produced by the pressure damage will contaminate the vacuum hand plate 10a and further contaminate the process chamber, thereby causing an increase in micro defects in the epitaxial layer. Summary of the invention

[0005] In response to the above technical problems, the present application provides a wafer adsorption device, a purge plate and semiconductor process equipment, which can improve the problem of pressure injuries caused by large-area contact between the existing vacuum hand plate and the wafer.

[0006] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides a wafer adsorption device, comprising:

[0007] The first plate body comprises a first surface and a second surface which are arranged opposite to each other;

[0008] An arm rod is hollow, and one end of the arm rod passes through the center of the first surface to the second surface, and the other end is used to connect a mechanical arm and a vacuum device, so as to vacuum the second surface of the first disk through the vacuum device via the arm rod;

[0009] At least two limiting components are evenly spaced along the edge of the first disk and protrude from the second surface, and the gap between two adjacent limiting components forms a guide groove on the second surface; the limiting component includes a clamping surface facing the center of the first disk;

[0010] Among them, the intersection lines of multiple planes parallel to the second surface and the clamping surface form multiple arcs, the radii of the multiple arcs gradually increase from one end close to the second surface to the end away from the second surface, and the minimum radius of the multiple arcs is smaller than the radius of the wafer, and the maximum radius is larger than the radius of the wafer.

[0011] Optionally, the clamping surface is a curved surface that protrudes away from the center of the first disk body.

[0012] Optionally, the curved surface is a spherical surface, and the radius of the spherical surface is substantially equal to the radius of the chamfered corner of the wafer.

[0013] Optionally, the limiting component includes:

[0014] A first limiting block is arranged on the first surface along the edge of the first disk;

[0015] A second limiting block is arranged on the second surface along the edge of the first disk body, and the clamping surface is a surface of the second limiting block facing the center of the first disk body;

[0016] The first connecting member connects the first limiting block and the second limiting block so that the first limiting block and the second limiting block clamp the edge of the first disk body.

[0017] Optionally, a first gasket is provided between the first limiting block and the first surface; and / or,

[0018] A second gasket is provided between the second limiting block and the second surface.

[0019] Optionally, both the first limiting block and the second limiting block are made of a material that can withstand a temperature of 100° C.

[0020] Optionally, a connecting hole is provided at the center of the first disk;

[0021] The wafer adsorption device further comprises a clamping assembly arranged in the connecting hole, the clamping assembly clamps the first disk body from the first surface and the second surface; a through hole coaxial with the connecting hole is arranged at the center of the clamping assembly;

[0022] One end of the arm rod is connected to the clamping assembly through the through hole.

[0023] Optionally, the clamping assembly comprises:

[0024] A first clamping block is disposed on the first surface and around the arm rod;

[0025] A second clamping block is disposed on the second surface around the arm rod;

[0026] The second connecting member connects the first clamping block and the second clamping block so that the first clamping block and the second clamping block clamp the first disk body.

[0027] In a second aspect, an embodiment of the present application provides a purge plate for purging the wafer adsorption device described in the above embodiments;

[0028] The purge disk comprises:

[0029] The second disk body comprises a third surface and a fourth surface which are arranged opposite to each other, wherein the third surface is opposite to the second surface;

[0030] A first guide block corresponding to the guide grooves one by one, wherein the first guide block is arranged on the third surface;

[0031] During purging, a surface of the first guide block away from the third surface abuts against the second surface, and a projection of the first guide block on the second surface just blocks the corresponding guide groove.

[0032] Optionally, the purge disk further includes:

[0033] a guide block group corresponding to the guide grooves one by one, the guide block group being arranged at the edge of the third surface, comprising at least two second guide blocks arranged in parallel, and the second guide block and the first guide block form an acute angle;

[0034] During purging, a surface of each of the second guide blocks away from the third surface abuts against the second surface.

[0035] Optionally, all the second guide blocks are distributed in a spiral shape relative to the center of the second disk body.

[0036] In a third aspect, an embodiment of the present application provides a semiconductor process equipment, including a pumping device, a transfer chamber, and a purge chamber;

[0037] The transfer chamber is provided with a mechanical arm and the wafer adsorption device as described in the above embodiments, and the mechanical arm and the air extraction device are respectively connected to the arm rod;

[0038] The exhaust device is used to control the wafer adsorption device to adsorb or release the wafer;

[0039] The robotic arm is used to control the movement of the wafer adsorption device;

[0040] A purge plate is arranged in the purge chamber; the purge plate is used to purge the wafer adsorption device when the wafer adsorption device moves into the purge chamber.

[0041] Optionally, the purge disk is the purge disk described in the above embodiments.

[0042] As described above, in the wafer adsorption device of the present application, when the vacuum device is pumping air, gas enters between the first disk body and the wafer from the gap between two adjacent limit assemblies (i.e., the guide groove), and an airflow moving from the edge to the center of the first disk body will be generated between the wafer and the first disk body. The faster the airflow rate, the smaller the pressure at the position, and the airflow rate on the back of the wafer can be considered to be that the flow rate difference between the front and back of the wafer will generate a pressure difference to suck up the wafer. Since the radius corresponding to the above-mentioned multiple arc-shaped intersection lines gradually increases from the end close to the second surface to the end away from the second surface, and the minimum radius of the arc is smaller than the radius of the wafer, and the maximum radius of the arc is larger than the radius of the wafer, the wafer can enter between the clamping surfaces and be clamped by each clamping surface, and also maintain a gap with the second surface of the first disk body to avoid large-area contact with the second surface, thereby preventing pressure injuries caused by the uneven surface of the wafer. In addition, the friction between the clamping surface of the wafer adsorption device of the present application and the wafer can keep the wafer level while enabling the wafer to move horizontally following the wafer adsorption device, making the adsorption more stable during the entire transmission process. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0044] Figure 1 This is a schematic diagram of an existing vacuum hand tray for adsorbing wafers;

[0045] Figure 2 This is a schematic diagram of the structure of a Bernoulli suction cup adsorbing a wafer provided in the comparative example of the present application;

[0046] Figure 3 It is a structural schematic diagram of a wafer adsorption device adsorbing a wafer provided in an embodiment of the present application;

[0047] Figure 4 yes Figure 3 A schematic top view of a wafer adsorption device;

[0048] Figure 5aIt is a schematic diagram of the shape of a clamping surface of a wafer adsorption device provided in an embodiment of the present application;

[0049] Figure 5b is a schematic diagram of the shape of a clamping surface of another wafer adsorption device provided in an embodiment of the present application;

[0050] Figure 6 It is a structural schematic diagram of a wafer adsorption device provided in an embodiment of the present application;

[0051] Figure 7 is based on Figure 2 Schematic diagram of a purge scheme for the Bernoulli suction cup;

[0052] Figure 8 It is a structural schematic diagram of a purge disk provided in an embodiment of the present application;

[0053] Fig. 9 It is a schematic diagram of the combined state of the wafer adsorption device and the purge plate in the purge state;

[0054] Fig.10 is along Fig. 9 Schematic diagram of the cross section along the AA line;

[0055] Fig.11 is along Fig. 9 Schematic diagram of the cross section of the BB line

[0056] Fig.12 It is a structural schematic diagram of a semiconductor process equipment provided in an embodiment of the present application.

[0057] The purpose of this application, the functional features and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0058] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0059] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0060] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0061] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0062] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0063] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0064] As described above, although the close fit between the existing vacuum hand plate 10a and the wafer 101a can provide a stable negative pressure to ensure the adsorption of the wafer 101a, it will also cause pressure damage to the uneven position of the wafer 101a surface. The particles generated by the pressure damage will contaminate the vacuum hand plate 10a and further contaminate the process chamber.

[0065] See also Figure 2 , Figure 2 This is a schematic diagram of the structure of a Bernoulli chuck provided in the comparative example of the present application. By blowing air toward the lower surface of the Bernoulli chuck 10b, the gas enters the gap between the Bernoulli chuck 10b and the wafer 101b. According to the following Bernoulli equation:

[0066]

[0067] Where p is the pressure at a point in the fluid, v is the flow velocity of the fluid at that point, ρ is the fluid density, g is the acceleration due to gravity, h is the height of the point, and C is a constant. When air flows through the gap between the Bernoulli chuck 10b and the wafer 101b, the pressure increases as the flow velocity decreases, and the pressure in the gap below the Bernoulli chuck 10b is lower than the external pressure. When the compressed gas approaches the periphery of the Bernoulli chuck 10b, the gas flow rate slows down due to the increase in the cross-sectional area, and the pressure also tends to atmospheric pressure. Therefore, the pressure in the gap below the Bernoulli chuck 10b is lower than the atmospheric pressure, and the wafer 101b can therefore float below the Bernoulli chuck 10b under the purge of compressed gas.

[0068] Although the Bernoulli suction cup 10b is a non-contact suction cup, which can avoid causing pressure damage to the surface of the wafer 101b, when the Bernoulli suction cup 10b sucks the wafer 101b and moves horizontally or up and down, the wafer 101b is not horizontal, which causes the wafer 101b to collide with the Bernoulli suction cup 10b, that is, the movement of the wafer 101b and the Bernoulli suction cup 10b does not match. Based on this, the present application provides a wafer suction device, a purge plate and a semiconductor process equipment.

[0069] See also Figure 3 and Figure 4 , Figure 3 1 is a schematic diagram of a structure of a wafer adsorption device adsorbing a wafer provided in an embodiment of the present application. Figure 4 yes Figure 3 The schematic top view of a wafer adsorption device is shown, and the wafer adsorption device may include: a first tray body 10, an arm rod 20 and at least two limit assemblies 30.

[0070] The first disk body 10 includes a first surface 11 and a second surface 12 that are arranged opposite to each other. For example, the first surface 11 is the top surface, and the second surface 12 is the bottom surface. The first disk body 10 can be made of quartz material. The arm rod 20 is hollow, and one end of the arm rod 20 passes through the center of the first surface 11 to the second surface 12, and the other end is used to connect the robot arm 110 and the vacuum device 120, so as to vacuum the second surface 12 of the first disk body 10 through the vacuum device 120 through the arm rod 20. The vacuum device 120 can be an air pump. In specific applications, the vacuum device 120 and the corresponding gas circuit can be placed inside the robot arm 110. At least two limit assemblies 30 are provided, Figure 4 The limiting components 30 are evenly spaced along the edge of the first disk body 10 and protrude from the second surface 12 , and the gap between two adjacent limiting components 30 forms a guide groove 34 on the second surface 12 .

[0071] The limiting assembly 30 includes a clamping surface 321 facing the center of the first disk body 10. The intersection lines of the plurality of planes parallel to the second surface 12 and the clamping surface 321 form an arc, and in the plurality of arcs formed above, the radius of the arc gradually increases from the end close to the second surface 12 to the end away from the second surface 12, and the minimum radius of the arc is smaller than the radius of the wafer, and the maximum radius of the arc is larger than the radius of the wafer.

[0072] The working principle of the wafer adsorption device of this embodiment is as follows: when the exhaust device 120 is exhausting, the gas enters between the first plate 10 and the wafer 101 from the gap between two adjacent limit assemblies 30 (i.e., the guide groove 34), similar to the principle of Bernoulli suction cup adsorbing the wafer, an airflow moving from the edge to the center of the first plate 10 is generated between the wafer 101 and the first plate 10, such as Figure 3As shown, the faster the airflow velocity, the smaller the pressure at the position, and the airflow velocity on the back of the wafer 101 can be considered to be 0. The velocity difference between the front and back of the wafer 101 will produce a pressure difference and suck up the wafer 101. Since the radii corresponding to the above-mentioned multiple arcs gradually increase from the end close to the second surface 12 to the end away from the second surface 12, and the minimum radius of the arc is smaller than the radius of the wafer, and the maximum radius of the arc is larger than the radius of the wafer, the wafer 101 can enter between the clamping surfaces 321 and be clamped by each clamping surface 321, and also maintain a gap with the second surface 12 of the first disk body 10 to avoid large-area contact with the second surface 12, and prevent the uneven surface of the wafer 101 from causing pressure injuries, and the airflow entering from the guide groove 34 can also sweep the second surface of the first disk body 10, so that the first disk body 10 has self-cleaning ability. After the wafer adsorption device adsorbs the wafer, the airflow will enter the gap between the first disk body 10 and the wafer through the guide groove 34 and flow out from the hollow structure of the arm rod 20. After the wafer adsorption device adsorbs the wafer and moves it to the target workstation, it is only necessary to turn off the power of the exhaust device 120. No pressure difference will be generated between the upper and lower surfaces of the wafer, and the wafer will gradually drop into the graphite base plate groove of the reaction chamber due to gravity.

[0073] Unlike the aforementioned Bernoulli suction cup 10b, the friction between the clamping surface 321 of the wafer suction device of this embodiment and the wafer 101 can keep the wafer 101 horizontal while also allowing the wafer 101 to move horizontally following the wafer suction device, so that the entire transmission process is more stably adsorbed. In addition, since the wafer is only in contact with the wafer suction device on the side, not on the entire surface, the wafer can be adsorbed by a relatively small adsorption force. For the case where the Notch and the opposite side of the wafer will have a large warp after the film growth process, when the current vacuum hand plate transmits a wafer with a large warp, it may cause excessive internal stress of the wafer, and excessive contact pressure between the wafer and the vacuum hand plate, so that the wafer is scratched or even broken and scrapped. When the wafer suction device of this embodiment adsorbs a wafer with a large warp, the position of one of the guide grooves 34 can be aligned with the Notch of the wafer, and the edge of the warped wafer can still be attached to the wafer suction device, which has good compatibility for the transmission of warped wafers.

[0074] It is understandable that the clamping surface 321 may be an outwardly opening inclined surface, such as Figure 5a As shown, it can also be a curved surface that opens outward, similar to a trumpet shape, such as Figure 5b Preferably, as shown Figure 3As shown, the clamping surface 321 is a curved surface that bulges away from the center of the first tray 10, so that the clamping surface 321 and the rounded corner of the wafer 101 have a larger contact area, increasing the friction between the two, and making the wafer more stable during transfer. As an example, the curved surface is a spherical surface, and the radius of the spherical surface is substantially equal to the radius of the rounded corner of the wafer, so that the contact area between the clamping surface 321 and the wafer 101 can be maximized.

[0075] In one embodiment, see Figure 6 And combined with Figure 4 , Figure 6 It is a structural schematic diagram of a wafer adsorption device provided in an embodiment of the present application. In the wafer adsorption device, the limit assembly 30 may include: a first limit block 31, a second limit block 32 and a first connecting member 33. The first limit block 31 is arranged on the first surface 11 along the edge of the first disk body 10, and the second limit block 32 is arranged on the second surface 12 along the edge of the first disk body 10. The clamping surface 321 is a side of the second limit block 32 facing the center of the first disk body 10. The first connecting member 33 connects the first limit block 31 and the second limit block 32 so that the first limit block 31 and the second limit block 32 clamp the edge of the first disk body 10. As an example, the first connecting member 33 can be a screw, and the screw passes through the first limit block 31, the first disk body 10 and the second limit block 32 in sequence to lock the three.

[0076] In addition, as some examples, a first gasket (not shown in the figure) can be set between the first limit block 31 and the first surface 11, and a second gasket (not shown in the figure) can also be set between the second limit block 32 and the second surface 12 at the same time to reduce the wear of the two surfaces of the first disk body 10 due to hard contact. The first limit block 31 and the second limit block 32 are preferably made of a material that can withstand a temperature of 100°C, such as a high-temperature resistant polymer material, a ceramic material, or even a metal material. For example, the high-temperature resistant polymer material can be polytetrafluoroethylene. In addition to having the characteristics of high temperature resistance to facilitate film removal at high temperatures, polytetrafluoroethylene also has a very small friction coefficient, so that the adhered particles (silicon slag) near the second limit block 32 are more easily blown away. As an example, four arc-shaped second limit blocks 32 can be set, and the corresponding central angle can be 45° and the height can be 5mm. The first gasket and the second gasket can be made of rubber.

[0077] In one embodiment, please refer to Figure 6, a connecting hole 13 is provided at the center of the first plate body 10. The wafer adsorption device may further include a clamping assembly 40 disposed in the connecting hole 13, the clamping assembly 40 clamps the first plate body 10 from the first surface 11 and the second surface 12; a through hole 43 coaxial with the connecting hole 13 is provided at the center of the clamping assembly 40; one end of the arm rod 20 is connected to the clamping assembly 40 through the through hole 43.

[0078] As an example, see Figure 6 The clamping assembly 40 may include: a first clamping block 41, a second clamping block 42 and a second connecting member (not shown in the figure). The first clamping block 41 is arranged around the arm rod 20 on the first surface 11, and the second clamping block 42 is arranged around the arm rod 20 on the second surface 12. The second connecting member connects the first clamping block 41 and the second clamping block 42 so that the first clamping block 41 and the second clamping block 42 clamp the first disk body 10. The first clamping block 41 and the second clamping block 42 can be made of metal material. For example, the first clamping block 41 can be welded and fixed to the arm rod 20 first, and the second connecting member can be a screw to lock and fix the first clamping block 41 and the second clamping block 42.

[0079] In addition, a third gasket 51 may be provided between the first clamping block 41 and the first surface 11, and a fourth gasket 52 may be provided between the second clamping block 42 and the second surface 12. The third gasket 51 and / or the fourth gasket 52 may be provided to prevent the two clamping blocks from rubbing against the first disk body 10 to generate particles. The third gasket 51 and the fourth gasket 52 may also be made of rubber.

[0080] It should be noted that during the wafer transfer process, the wafer adsorption device basically needs to be purged after each transfer is completed to reduce the probability of adsorption particles remaining on the wafer adsorption device.

[0081] See also Figure 7 , Figure 7 is based on Figure 2 The schematic diagram of a purging scheme of the Bernoulli suction cup is shown in FIG. The purge disc 20b includes an annular air passage 21b inside, a circle of exhaust holes 22b on the top surface, and an air inlet 23b on the side. During purging, the purge disc 20b is located below the adsorption surface of the Bernoulli suction cup 10b, and the compressed gas flows into the air passage 21b from the air inlet 23b, and then the adsorption surface of the Bernoulli suction cup 10b is purged vertically upward from each exhaust hole 22b. The airflow of the purge disc is perpendicular to the surface of the Bernoulli suction cup 10b, and the purging effect on the particles is poor and uneven. In addition, the system of the purge chamber is complicated, and a separate vacuum pump is required to discharge a large amount of purge gas in time.

[0082] Based on the wafer adsorption device of each embodiment of the present application, the embodiment of the present application further provides a purge plate for purging the wafer adsorption device of each embodiment of the present application. Figure 8-Figure 11 , Figure 8 is a schematic diagram of the structure of a purge disk provided in an embodiment of the present application, Fig. 9 It is a schematic diagram of the combined state of the wafer adsorption device and the purge plate in the purge state. Fig.10 is along Fig. 9 Schematic diagram of the cross section along line AA. Fig.11 is along Fig. 9 The purge plate may include: a second plate body 60 , and first guide blocks 70 corresponding to the guide grooves 34 one by one.

[0083] The second disk body 60 includes a third surface 61 and a fourth surface 62 that are arranged opposite to each other, the third surface 61 is opposite to the second surface 12, and the first guide block 70 is arranged on the third surface 61. When purging, a surface of the first guide block 70 away from the third surface 61 abuts against the second surface 12 of the first disk body 10, and the projection of the first guide block 70 on the second surface 12 just blocks the corresponding guide groove 34.

[0084] During purging, it is only necessary to start the exhaust device 120 connected to the wafer adsorption device. The airflow also enters from the guide groove 34. However, due to the obstruction of the first guide block 70, the airflow can only enter from the gap 71 between the clamping surface 321 of the limit assembly 30 and the first guide block 70. Fig.11 The airflow is horizontal and can directly purge the limit assembly 30 to remove particles adhered to the second surface 12 of the first plate 10. Compared with the vertical airflow, the horizontal airflow has a high purge efficiency, which reduces the number of times the wafer adsorption device is opened for maintenance to improve the machine capacity. Moreover, since the purge airflow comes from the exhaust device 120, there is no need to set up an additional exhaust pump, and the structure is simpler.

[0085] In one embodiment, please refer to Figure 8-Figure 11 The purge disk may also include: a guide block group 80 corresponding to the guide groove 34, and the guide block group 80 is arranged at the edge of the third surface 61 of the second disk body 60. The guide block group 80 may include at least two second guide blocks 81 arranged in parallel, and the second guide block 81 forms an acute angle with the first guide block 70. When purging, a side of each second guide block 81 away from the third surface 61 abuts against the second surface 12, so that an air intake channel is formed between two adjacent second guide blocks 81, and the air intake channel forms an acute angle with the first guide block 70, so that the airflow can be obliquely incident into the gap between the first disk body 10 and the second disk body 60, and the limit assembly 30 is purged, and the purge angle of the airflow can be fixed.

[0086] Preferably, Fig. 9As shown, all the second guide blocks 81 are distributed in a spiral shape relative to the center of the second disk body 60 . This arrangement of the second guide blocks 81 can form a vortex airflow between the first disk body 10 and the second disk body 60 , which has a better blowing effect on the limiting assembly 30 .

[0087] The present application also provides a semiconductor process equipment. Fig.12 , Fig.12 1 is a schematic structural diagram of a semiconductor process equipment provided in an embodiment of the present application. The semiconductor process equipment may include a transfer chamber 100 and a purge chamber 200 that are connected to each other.

[0088] A robotic arm 110, an exhaust device 120, and a wafer adsorption device 130 as described in the above embodiments are arranged in the transfer chamber 100. The robotic arm 110 and the exhaust device 120 are respectively connected to the arm rod 20. It should be noted that the exhaust device 120 and the related exhaust channel can be integrated inside the robotic arm 110. The exhaust device 120 can be connected to the hollow structure of the arm rod 20 through the exhaust channel to control the wafer adsorption device 130 to adsorb or release the wafer. The robotic arm 110 controls the movement of the wafer adsorption device 130 through the arm rod 20. A purge plate 210 is arranged in the purge chamber 200; the purge plate 210 is used to purge the wafer adsorption device 130 when the wafer adsorption device 130 moves into the purge chamber 200.

[0089] For example, an air inlet 220 and an exhaust port 230 may be provided on the purge chamber 200, and the wafer adsorption device 130 may be purged by additionally providing a vacuum pump. Preferably, the purge plate 210 is the purge plate described in the above embodiments of the present application. During purging, it is only necessary to start the exhaust device 120, and no additional exhaust device is required.

[0090] For other working principles and processes of the semiconductor process equipment of this embodiment, please refer to the description of the wafer adsorption device and the purge plate in the aforementioned embodiment of the present invention, which will not be repeated here.

[0091] The above is a detailed introduction to a wafer adsorption device, a purge plate and a semiconductor process equipment provided by the present application. This article uses specific examples to illustrate the principle and implementation method of the present application. It should be noted that in the present application, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant description of other embodiments.

[0092] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. A wafer adsorption device, characterized in that: include: The first plate body comprises a first surface and a second surface which are arranged opposite to each other; An arm rod is hollow, and one end of the arm rod passes through the center of the first surface to the second surface, and the other end is used to connect a mechanical arm and a vacuum device, so as to vacuum the second surface of the first disk through the vacuum device via the arm rod; At least two limiting components are evenly spaced along the edge of the first disk and protrude from the second surface, and the gap between two adjacent limiting components forms a guide groove on the second surface; the limiting component includes a clamping surface facing the center of the first disk; Among them, the intersection lines of multiple planes parallel to the second surface and the clamping surface form multiple arcs, the radii of the multiple arcs gradually increase from one end close to the second surface to the end away from the second surface, and the minimum radius of the multiple arcs is smaller than the radius of the wafer, and the maximum radius is larger than the radius of the wafer.

2. The wafer adsorption device according to claim 1, characterized in that: The clamping surface is a curved surface that protrudes away from the center of the first disk body.

3. The wafer adsorption device according to claim 2, characterized in that: The curved surface is a spherical surface, and the radius of the spherical surface is substantially equal to the radius of the rounded corner of the wafer.

4. The wafer adsorption device according to claim 1, characterized in that: The limiting component comprises: A first limiting block is arranged on the first surface along the edge of the first disk; A second limiting block is arranged on the second surface along the edge of the first disk body, and the clamping surface is a surface of the second limiting block facing the center of the first disk body; The first connecting member connects the first limiting block and the second limiting block so that the first limiting block and the second limiting block clamp the edge of the first disk body.

5. The wafer adsorption device according to claim 4, characterized in that: A first gasket is provided between the first limiting block and the first surface; and / or, A second gasket is provided between the second limiting block and the second surface.

6. The wafer adsorption device according to claim 5, characterized in that: The first limiting block and the second limiting block are both made of a material that can withstand a temperature of 100° C.

7. The wafer adsorption device according to any one of claims 1 to 6, characterized in that: A connecting hole is provided at the center of the first disk; The wafer adsorption device further comprises a clamping assembly arranged in the connecting hole, the clamping assembly clamps the first disk body from the first surface and the second surface; a through hole coaxial with the connecting hole is arranged at the center of the clamping assembly; One end of the arm rod is connected to the clamping assembly through the through hole.

8. The wafer adsorption device according to claim 7, characterized in that: The clamping assembly comprises: A first clamping block is disposed on the first surface and around the arm rod; A second clamping block is disposed on the second surface around the arm rod; The second connecting member connects the first clamping block and the second clamping block so that the first clamping block and the second clamping block clamp the first disk body.

9. A purge disc, characterized in that: Used to purge the wafer adsorption device according to any one of claims 1 to 8; The purge disk comprises: The second disk body comprises a third surface and a fourth surface which are arranged opposite to each other, wherein the third surface is opposite to the second surface; A first guide block corresponding to the guide grooves one by one, wherein the first guide block is arranged on the third surface; During purging, a surface of the first guide block away from the third surface abuts against the second surface, and a projection of the first guide block on the second surface just blocks the corresponding guide groove.

10. The purge disc according to claim 9, characterized in that: Also includes: a guide block group corresponding to the guide grooves one by one, the guide block group being arranged at the edge of the third surface, comprising at least two second guide blocks arranged in parallel, and the second guide block and the first guide block form an acute angle; During purging, a surface of each of the second guide blocks away from the third surface abuts against the second surface.

11. The purge disc according to claim 10, characterized in that: All the second guide blocks are distributed in a spiral shape relative to the center of the second disk body.

12. A semiconductor process equipment, characterized in that: including a transfer chamber and a purge chamber connected to each other; The transfer chamber is provided with a mechanical arm, an exhaust device and the wafer adsorption device according to any one of claims 1 to 8, and the mechanical arm and the exhaust device are respectively connected to the arm rod; The exhaust device is used to control the wafer adsorption device to adsorb or release the wafer; The robotic arm is used to control the movement of the wafer adsorption device; A purge plate is arranged in the purge chamber; the purge plate is used to purge the wafer adsorption device when the wafer adsorption device moves into the purge chamber.

13. The semiconductor process equipment according to claim 12, characterized in that: The purge disc is the purge disc according to any one of claims 9 to 11.

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