Large-area phase pattern processing method and device

Abstract

The invention discloses a large-area phase pattern processing method and device, and belongs to the field of phase plate processing. The method comprises the following steps: dividing a phase pattern to be processed into a plurality of blocks; controlling a first displacement table to move a corresponding position of the substrate to a light processing position based on one selected block of the plurality of blocks; a second displacement table is controlled to move the substrate in the blocks based on the moving direction of the first displacement table, and light processing is carried out; selecting a next block of the plurality of blocks; and the steps are repeated until the machining of the multiple blocks is completed. According to the method, extremely-high-precision large-area pattern transfer can be achieved, the problem that it is difficult to balance the area and precision in a traditional machining technology is solved, the phase plate prepared through the method is large in area, high in fineness and high in stability, and different patterns can be flexibly adjusted and prepared according to actual needs.

Description

Technical Field

[0001] The invention belongs to the field of phase plate processing, and in particular relates to a processing method for a large-area phase pattern. Background Art

[0002] A phase plate is an optical element used to change the phase of a light wave passing through it. By changing the phase of the light wave, the phase plate can achieve precise control of the light wave, thus playing a key role in optical applications such as laser systems and quantum imaging. Although traditional methods for preparing phase patterns of optical phase plates, such as photolithography and electron beam exposure, have been widely used, these methods still have certain limitations. Specifically, photolithography has a low resolution and requires the use of a mask, which limits the degree of freedom in processing; electron beam exposure technology can achieve nanometer-level processing accuracy, but its processing speed is slow and the cost is high, making it difficult to meet the needs of large-area, high-efficiency phase pattern production.

[0003] With the emergence of two-photon polymerization technology, three-dimensional micro-nano processing has entered a new era. This technology uses the nonlinear interaction between femtosecond lasers and photosensitive materials to achieve micron-level or even nanometer-level fine structure processing through the energy threshold effect. It has unique advantages such as high resolution, high precision, and non-contact processing, and is suitable for complex phase pattern manufacturing. However, how to use two-photon polymerization technology to efficiently prepare high-precision phase patterns over a large area and ensure the stability of the physical and chemical properties of the prepared phase plate still faces many challenges, especially in the efficient preparation of large-area phase patterns. There are problems such as low processing efficiency, limited processing range, and low precision. Summary of the invention

[0004] In view of the above problems, the present disclosure provides a large-area phase pattern processing method and device to achieve large-area and high-precision phase pattern preparation, which is specifically achieved through the following technical solutions.

[0005] According to a first aspect of the present disclosure, a large-area phase pattern processing method is provided, comprising the steps of:

[0006] S1. Divide the phase pattern to be processed into multiple blocks.

[0007] S2, based on selecting one of the multiple blocks, controlling the first translation stage to move the corresponding position of the substrate to the light treatment position; controlling the second translation stage to move the substrate within the one block based on the movement plane of the first translation stage, and performing light treatment; selecting the next block of the multiple blocks.

[0008] S3. Repeat step S2 until the processing of the multiple blocks is completed.

[0009] According to an embodiment of the present disclosure, the light treatment includes: using a single beam of femtosecond laser to focus on a target position of the photoresist, and utilizing a two-photon absorption effect to achieve curing of the photoresist.

[0010] According to an embodiment of the present disclosure, the use of a single femtosecond laser to focus on a target position of a photoresist and utilizing a two-photon absorption effect to achieve curing of the photoresist includes: adjusting the height position of the single femtosecond laser focused on the substrate and performing layered light processing on the substrate based on the block.

[0011] According to an embodiment of the present disclosure, before controlling the second translation stage to move the substrate within the one block, the method includes: performing error compensation on the movement of the second translation stage based on the movement of the first translation stage.

[0012] According to an embodiment of the present disclosure, performing error compensation on the movement of the second translation stage based on the movement of the first translation stage includes: performing error compensation on the movement of the second translation stage based on the movement direction of the first translation stage and an empirical error value.

[0013] According to an embodiment of the present disclosure, the method includes the steps of: S4, placing the substrate in a developer for development; S5, transferring a pattern corresponding to the phase pattern to the substrate.

[0014] According to an embodiment of the present disclosure, step S5 of the method includes:

[0015] S501, evaporating chromium element onto the substrate obtained in S4.

[0016] S502, using a degumming solution to treat the substrate obtained in S501.

[0017] S503, using an etcher to etch the substrate obtained in S502.

[0018] S504, using a chromium etching solution to remove the chromium layer of the substrate obtained in S503.

[0019] Another aspect of the present disclosure provides a large-area phase pattern processing device, comprising:

[0020] The phase pattern processing module is used to divide the phase pattern to be processed into multiple blocks.

[0021] The mobile control module is used to control the first translation stage to move the corresponding position of the substrate to the light processing position based on one block of the multiple blocks; and is used to control the second translation stage to move within the one block and control the light processing.

[0022] The first displacement stage is used to drive the second displacement stage to move according to the control of the movement control module.

[0023] The second translation stage is used to drive the substrate to move based on the movement plane of the first translation stage according to the control of the movement control module.

[0024] The laser is used to perform optical processing on the substrate based on the phase pattern to be processed and the movement of the second translation stage.

[0025] According to an embodiment of the present disclosure, the device includes a feedback adjustment module, which is used to control the second translation stage to perform displacement compensation according to the movement of the first translation stage.

[0026] According to an embodiment of the present disclosure, the laser is used to perform layered light processing on the substrate based on the height position at which it is focused on the substrate.

[0027] One or more of the above embodiments have the following beneficial effects:

[0028] 1. The phase pattern to be processed is divided into a plurality of blocks; based on one of the plurality of blocks, the first translation stage is controlled to move the corresponding position of the substrate to the light processing position; the second translation stage is controlled to move the substrate within the one block in the moving direction of the first translation stage, and light processing is performed; the next block of the plurality of blocks is selected, and the above steps are repeated, so as to achieve the technical effect of high-precision processing of large-area phase patterns.

[0029] 2. The displacement range of the mechanical displacement stage reaches 100×100mm², which can cover a wide range of processing areas; while the processing range of the piezoelectric displacement stage is 300×300um 2 , the displacement accuracy is ±1nm, and high-precision processing is possible. The present invention achieves a displacement accuracy of 1nm under the coordinated work of the piezoelectric displacement stage and the mechanical displacement stage, ensuring that the processed phase pattern has extremely high accuracy and detail expression. This accuracy is of great significance in applications such as optical imaging, optical sensors, and optical waveguides, and can meet the strict requirements for accuracy in these fields, thereby improving the performance and application effects of optical devices.

[0030] 3. It is highly flexible and can realize the rapid processing of personalized phase patterns. By providing the 3D model file to be processed, the system can automatically adjust the processing parameters and execute them efficiently without complex templates or equipment adjustments. The system is particularly suitable for high-precision, low-volume personalized customization needs, which can significantly shorten the development cycle and improve production efficiency. It is suitable for application in laboratory and industrial production environments. This flexibility enables the present invention to adapt to diverse market needs and reduce production costs.

[0031] 4. Based on the energy threshold effect of femtosecond laser, the processing process has a wide range of applicability to transparent substrates and photoresist materials. By accurately adjusting the energy threshold of the laser, high-precision processing can be achieved on a variety of different materials without relying on specific lasers and processing systems. In this way, the material application range of this technology can be greatly improved, the dependence on equipment can be reduced, and it provides the possibility for a wide range of applications in laboratories and industrial environments.

[0032] 5. A complete post-processing process is designed after two-photon polymerization. The advantage of this processing flow lies in its comprehensiveness and precision. Through the synergistic effect of multiple steps such as development, chromium layer deposition, photoresist removal, cleaning, etching, chromium layer removal, and cleaning, high-precision and high-efficiency pattern transfer and material processing are achieved. The development step ensures clear pattern boundaries, chromium layer deposition provides a high adhesion mask, photoresist removal avoids residual effects, the cleaning step ensures surface purity, etching achieves precise pattern transfer, and chromium layer removal ensures clear final patterns. This process significantly improves product quality and meets high-precision manufacturing requirements.

[0033] 6. By combining precise laser scanning positioning with the energy threshold effect of two-photon polymerization, high-precision processing control is achieved, and the preparation efficiency and pattern quality are greatly improved through innovative post-processing technology. The present invention not only optimizes the application of traditional two-photon polymerization technology in large-area processing, but also breaks through the technical bottlenecks of phase pattern splicing and post-processing, and provides a new solution for efficient and accurate large-area phase pattern preparation, providing more powerful technical support for the manufacture of high-precision components in the fields of optical imaging, optical waveguides, etc.

[0034] 7. This processing method solves the problems existing in the prior art, such as small processing area, low processing precision, inconsistent performance, and low degree of freedom of processing graphics. It improves work efficiency through optimized processing flow and ensures large area, high precision, strong stability and high degree of freedom of the final processed phase. This processing method is suitable for processing various transparent materials and can process large-area graphic structures with specific phase characteristics. It is particularly suitable for application fields such as optical imaging, optical waveguides, and optical sensors to control the polarization characteristics of light and improve imaging quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0036] Figure 1 The flowchart of a large-area phase pattern processing method according to an embodiment of the present disclosure is schematically shown.

[0037] Figure 2The schematic diagram shows the principle diagram of large-area phase pattern light processing according to an embodiment of the present disclosure.

[0038] Figure 3 The flowchart of a large-area phase pattern processing method according to another embodiment of the present disclosure is schematically shown.

[0039] Figure 4 The figure shows the effect of developing a large-area phase pattern according to an embodiment of the present disclosure.

[0040] Figure 5 A large-area phase pattern effect diagram according to an embodiment of the present disclosure is shown.

[0041] Figure 6 A structural block diagram of a large-area phase pattern processing device according to an embodiment of the present disclosure is shown.

[0042] Figure 7 A working flow chart of a large-area phase pattern processing device according to another embodiment of the present disclosure is shown.

[0043] In the figure, 100 is a first translation stage; 200 is a second translation stage; 300 is a movement control module; 400 is a phase pattern processing module; and 500 is a laser.

[0044] 1. Mechanical displacement stage; 2. Piezoelectric displacement stage; 3. Sample holder; 4. Substrate; 5. First printing area; 6. Objective lens; 7. Computer; 8. First printing block; 9. Second printing area; 10. Second printing block.

[0045] It should be noted that, for the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the sizes of the overall / local structures or the overall / local areas may be enlarged or reduced, that is, these drawings are not drawn according to the actual scale. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0047] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0048] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0049] The following will be combined Figure 1-Figure 5 The large-area phase pattern processing method is described in detail.

[0050] Figure 1 The flowchart of the large-area phase pattern processing method according to the embodiment of the present disclosure is schematically shown. Figure 1 As shown, this embodiment includes:

[0051] Step S1, dividing the phase pattern to be processed into a plurality of blocks.

[0052] Step S2, based on one of the multiple blocks, control the first translation stage to move the corresponding position of the substrate to the light processing position; control the second translation stage to move the substrate within the one block in the moving direction of the first translation stage, and perform light processing; select the next block of the multiple blocks.

[0053] Step S3, repeating step S2 until the multiple block processing is completed.

[0054] In step S1 of the embodiment of the present disclosure, the phase pattern to be processed can be divided into a plurality of blocks by obtaining a pre-designed phase pattern to be processed. Before dividing the phase pattern to be processed into a plurality of blocks, a large-area phase pattern model can be designed using a model design software. After the phase pattern design is completed, the phase pattern model is then processed into blocks using a block processing software.

[0055] In this embodiment, a large-area phase pattern model is designed using model design software, and then the model is sliced ​​and divided into blocks using slicing software. The shape of the large-area phase pattern can be freely defined. According to the light processing line width, the minimum size of the phase pattern is 180nm, the height z of the phase pattern is 300nm-8mm, and the minimum slicing distance of the slicing process is 1nm. For example, the volume of the exemplary phase pattern model in this embodiment can be 1300um×1300um×400nm (xyz), and the size and shape of the block is a regular hexagon with a height of 400nm (z) and a side length of 70um.

[0056] In step S2, based on one of the multiple blocks, the first translation stage is controlled to move the corresponding position of the substrate to the light processing position; the second translation stage is controlled to move the substrate within the one block based on the moving plane of the first translation stage and perform light processing; and the next block of the multiple blocks is selected.

[0057] In the embodiment of the present disclosure, one of the multiple blocks can be selected according to the multiple blocks pre-divided by operation S1, and the first displacement stage can be controlled to move, and the first displacement stage further drives the second displacement stage to realize moving the position of the substrate corresponding to the block to the light processing position; the second displacement stage is controlled to move the substrate in the one block along the moving direction of the first displacement stage, and perform light processing. For example, if the first displacement stage moves in the horizontal direction, the second displacement stage still moves the substrate along the horizontal direction. It should be noted that the second displacement stage here moves in the direction in which the first displacement stage is designed to move. For example, if the first displacement stage is designed to move in the horizontal platform direction, the second displacement stage also moves in the horizontal platform direction. In other words, if the first displacement stage is designed to move in the xy plane, the second displacement stage also moves in the xy plane. It is not limited that the second displacement stage must move in the same straight line direction as the first displacement stage. For example, the first displacement stage moves only in the x direction on the horizontal plane, and the second displacement stage can move in the y direction on the horizontal plane, or the second displacement stage can move in the x and y directions on the horizontal plane at the same time. In order to process the photoresist in the block, the second displacement stage is controlled to move the substrate within the range of the block. Along with the movement of the second displacement stage, the photoresist at the photolithography position is processed.

[0058] In the embodiments of the present disclosure, a variety of photoresists can be selected to apply the process implemented by the present disclosure according to the specific process design. For example, according to the dissolution behavior of the photoresist, it can be a positive photoresist or a negative photoresist. The part of the positive photoresist exposed to ultraviolet light will undergo chemical changes and become easy to dissolve in a specific developer. After development, the unexposed area is left to form the desired pattern. Negative photoresist: After illumination, the exposed area will become more stable and less soluble. After development, the illuminated area is retained to form a negative image. According to the chemical structure classification of the photosensitive resin, it can be a photopolymerization type photoresist, a photodecomposition type photoresist or a photocross-linking type photoresist, etc. It will not be elaborated here.

[0059] In the embodiment of the present disclosure, the first displacement stage can be a mechanical displacement stage, and the second displacement stage can be a piezoelectric displacement stage. The mechanical displacement stage is used to drive the piezoelectric displacement stage to perform a large-scale displacement of the substrate. The movement range of the mechanical displacement stage is 100×100mm², and the step accuracy is ±1um. Piezoelectric displacement stage: Based on the piezoelectric effect transmission method, the piezoelectric displacement stage substrate is used to perform a small-scale high-precision displacement. The movement range of the piezoelectric stage (i.e., the largest printing block) is 300×300um2 , the stepping accuracy is ±1nm. In the optical processing process of this embodiment, the displacement accuracy of the piezoelectric displacement stage is very high, but the printing range is limited, while the mechanical displacement stage can move over a large range, but the displacement accuracy is low. The method of the disclosed embodiment can expand the optical processing area while ensuring high-precision printing, thereby effectively realizing large-area high-precision pattern preparation.

[0060] In the embodiment of the present disclosure, after a block is optically processed, a second block of the plurality of blocks is selected according to the plurality of blocks divided by the phase pattern to be processed. Based on the selected second block, the first displacement stage is controlled to move the corresponding position of the substrate to the optical processing position; the second displacement stage is controlled to move the substrate in the second block in the moving direction of the first displacement stage, and optical processing is performed. After the optical processing of the second block is completed, the step of selecting the next block is repeated until the processing of the plurality of blocks is completed.

[0061] Figure 2 The schematic diagram shows the principle diagram of large-area phase pattern light processing according to an embodiment of the present disclosure.

[0062] like Figure 2 As shown, in one embodiment of operation S2, the light treatment includes: using a single-beam femtosecond laser to focus on the target position of the photoresist, and using the two-photon absorption effect to achieve the curing of the photoresist. This embodiment adopts a single-beam femtosecond laser two-photon polymerization technology, focusing the laser on the same focal position of the photoresist through a high numerical aperture objective lens, and using the two-photon absorption effect to achieve local curing of the photoresist. In this process, parameters such as laser power and scanning speed are precisely controlled to achieve high-precision and large-area phase pattern processing. Figure 2 As shown in a, this nonlinear characteristic causes the polymerization reaction to occur only at the laser focus, while almost no polymerization occurs in areas outside the focus, thus achieving extremely high spatial resolution and accuracy. Figure 2 In single-photon polymerization shown in b, the polymerization reaction occurs in the entire focusing cone, which limits the processing of complex graphic structures.

[0063] In this embodiment, the single beam femtosecond laser required for implementation can be set to the working parameters of the femtosecond laser: the wavelength of the femtosecond laser is 780nm, the repetition frequency is 80MHz, and the pulse width is 80-100 fs; the main processing parameters are: the laser power is 25-33mW. The scanning speed is related to the moving speed of the second translation stage, for example, the scanning speed can be 3-10mm / s.

[0064] In some embodiments of the present disclosure, the method of using a single beam of femtosecond laser to focus on a target position of the photoresist and utilizing the two-photon absorption effect to achieve curing of the photoresist further specifically includes the following implementation steps:

[0065] Step B1: cleaning the substrate: rinse the substrate surface with isopropanol, and blow dry the substrate with nitrogen or air to remove residual solvent, wherein the substrate is 1 mm thick fused quartz, and the cleaning time of the substrate with isopropanol is 20-120 seconds.

[0066] Step B2: silanization treatment: Use a microwave plasma degumming machine or acetone to treat the cleaned substrate, wherein the oxygen concentration of the microwave plasma degumming machine is 100 sccm, the power is 100 W, the time is 60 s, and the time for immersing the substrate in acetone is 720 min.

[0067] Step B3: dripping photoresist: using a dropper, dripping IP-Dip photoresist onto the silanized substrate. The photoresist is selected from conventional commercial photoresists, including but not limited to SU-8 and IP-Dip.

[0068] Step B4: Laser direct writing: Use a two-photon polymerization laser direct writing machine to process according to the phase pattern model to be processed, and use the large-area phase pattern processing method of the embodiment of the present disclosure to solidify the photoresist to obtain an initial phase pattern.

[0069] In some embodiments of the present disclosure, the use of a single-beam femtosecond laser to focus on a target position of a photoresist and utilizing a two-photon absorption effect to achieve curing of the photoresist includes: adjusting the height position of the single-beam femtosecond laser focused on the substrate, and performing layered light processing on the substrate based on the block. In this embodiment, the height position of the single-beam femtosecond laser focused on the substrate can be adjusted by adjusting the objective lens of the laser machine used, so as to achieve layered light processing of photoresists at different heights on the substrate.

[0070] In some embodiments of the present disclosure, before controlling the second translation stage to move the substrate in the one block, the method includes: based on the movement of the first translation stage, controlling the movement of the second translation stage to perform error compensation. For example, when the first translation stage moves in the x-axis direction in the xy plane, when the first translation stage moves to the target position, since there is an error Δx when the first translation stage moves in the x-axis direction, the second translation stage is controlled to move Δx in the opposite direction of the x-axis first to perform displacement error compensation. Similarly, when the first translation stage moves in the y-axis direction in the xy plane, when the first translation stage moves to the target position, since there is an error Δy when the first translation stage moves in the y-axis direction, the second translation stage is controlled to move Δy in the opposite direction of the y-axis first to perform displacement error compensation. After the second translation stage completes error compensation. Then continue to execute according to the subsequent steps, that is, control the second translation stage to move the substrate in the one block in the moving direction of the first translation stage, and perform light processing.

[0071] In some embodiments of the present disclosure, the error compensation for the movement of the second translation stage based on the movement of the first translation stage includes: based on the movement direction and the empirical error value of the first translation stage, the error compensation for the movement of the second translation stage. In this embodiment, for example, the first translation stage is a mechanical translation stage, and the second translation stage is a piezoelectric translation stage. The mechanical translation stage moves in the horizontal direction based on gear transmission. Due to the accuracy problem of gear transmission, the error generated by the movement is often proportional to the moving distance. In this embodiment, based on the movement direction and the empirical error value of the first translation stage, the error compensation for the movement of the second translation stage is performed. For example, when the first translation stage moves a distance of x in the x-axis direction, the error is Δx, and the second translation stage is controlled to move Δx in the opposite direction of the x-axis first to perform displacement error compensation; because when the first translation stage moves a distance of 2x in the x-axis direction, the error is 2Δx, and the second translation stage is controlled to move 2Δx in the opposite direction of the x-axis first to perform displacement error compensation.

[0072] Through the embodiments of the present disclosure, large-area high-precision manufacturing can be achieved: in the light processing process, the single processing range is usually limited, and the embodiment method can splice multiple small-range high-precision graphics into a large-area graphic, thereby realizing large-area, high-precision graphic manufacturing and meeting the needs of complex structures and large-area applications; improving processing efficiency and quality: by precisely controlling the first translation stage and the second translation stage, the precise alignment of each graphic block is ensured, the graphic dislocation caused by mechanical errors is reduced, and the processing efficiency and quality are improved; adapting to complex graphics and structures: in micro-nano processing, graphics often have complex shapes and fine structures. This embodiment can adapt to these complex graphics and structures, and ensure the continuity and consistency of the entire graphic by performing real-time error compensation; reducing manual intervention: the splicing and error compensation of graphics can be automatically completed, reducing manual intervention, improving the degree of automation and repeatability of processing, and ensuring the stability of product quality.

[0073] In order to solve the problem of how to overcome the precision loss and finished product quality problems in large-area processing through a sophisticated post-processing process, in some embodiments of the present disclosure, the large-area phase pattern processing method further includes the steps of: S4, placing the substrate in a developer for development; S5, transferring the pattern corresponding to the phase pattern to the substrate.

[0074] In one embodiment of operation S4, placing the substrate in a developer for development includes: placing the substrate with the phase pattern in a developer for development, after the development is completed, rinsing the substrate with isopropyl alcohol, then washing the substrate with deionized water, and drying the substrate with nitrogen or air to remove residual moisture. In this embodiment, the developing liquid can be a conventional commercial negative photoresist developer, including but not limited to PGMEA and SU-8 developer, and the developing time is 6-30 minutes.

[0075] In one embodiment of operation S5, transferring a pattern corresponding to the phase pattern onto the substrate comprises the steps of:

[0076] C1 Chromium layer deposition: Electron beam evaporation of chromium onto a double cleaned S4 substrate.

[0077] C2 Photoresist Removal: Use a degumming solution to remove the photoresist that has been cured on the substrate after two-photon polymerization.

[0078] C3 cleaning: After removing the photoresist, clean the substrate with isopropyl alcohol, then clean the substrate with deionized water, and blow dry the substrate with nitrogen or air to remove residual moisture.

[0079] C4 etching process: Use a reactive ion etcher to etch the substrate and remove material from the surface area not covered by the chromium layer.

[0080] C5 Chromium layer removal: Use chromium etching solution to remove the chromium layer on the substrate.

[0081] C6 cleaning: Clean the substrate with isopropyl alcohol, then rinse the substrate with deionized water, and blow dry the substrate with nitrogen or air to remove residual moisture.

[0082] In step C1 of this embodiment, electron beam evaporation is used to deposit chromium onto the substrate that has been cleaned twice, and the thickness of the evaporated chromium layer is 20-400 nm. The advantage of using electron beam evaporation is that it can efficiently prepare high-purity, high-density films, which helps to improve the adhesion between the film and the substrate, and ensures stability during subsequent processing and use. The plated chromium layer reacts with the oxygen on the surface to form a dense chromium oxide layer, which can effectively prevent further oxidation from occurring, and exhibits high chemical stability in chemical environments such as various etching gases, thereby providing excellent protection and structural stability in subsequent etching and processing steps. Therefore, the use of electron beam deposition of chromium in pattern transfer can improve the overall pattern transfer quality and performance.

[0083] In step C2 of this embodiment, a degumming liquid is used to remove the photoresist cured on the substrate after two-photon polymerization. The degumming liquid used is NMP, which is heated in a 75° C. water bath for 120 minutes, followed by ultrasonic treatment for 60-120 seconds.

[0084] In step C4 of this embodiment, a reactive ion etcher is used to etch the substrate, and material is removed from the area on the surface that is not covered by the chromium layer. The gases used for the etching process are sulfur hexafluoride and trifluoromethane, with flow rates of 8.5 sccm and 39.5 sccm, respectively, and the time is 120 min. In this embodiment, the advantage of using a reactive ion etcher is that it can accurately control the material removal process, including selectively removing materials in a specific area and keeping other parts of the substrate unaffected. In the process of pattern transfer, the control of pattern accuracy is crucial to the function and performance of the final structure. Reactive ion etching can chemically react with the substrate material (by generating volatile byproducts) through the active fluorine atoms and ions generated by sulfur hexafluoride and trifluoromethane in the plasma, thereby achieving material removal. However, the reactivity of chromium elements to these active particles is low, so in the etching process, the chromium layer can be used as a mask layer to protect the substrate below from being affected by etching, thereby ensuring the accuracy and quality of pattern transfer.

[0085] In step C5 of the present embodiment, chromium etching solution is used to remove the chromium layer on the substrate. The chromium etching solution used is 1020 and the time is 480min. The chromium layer on the substrate can be removed using chromium etching solution because of the chemical composition and reaction mechanism of chromium etching solution. Chromium etching solution usually contains components such as ammonium cerium nitrate, non-oxidizing acid, hydrogen peroxide and stabilizer. These components react chemically with the chromium layer during the etching process to generate water-soluble compounds, thereby achieving the removal of the chromium layer. For example, ammonium cerium nitrate will form a black, continuously formed new layer on the chromium layer during the etching process, and this layer of material is very soluble in water, so it is also very soluble in chromate etching agents. In addition, the selectivity of chromium etching solution is good, and the chromium layer can be effectively removed without affecting other materials on the substrate. This chemical etching method is widely used in semiconductor manufacturing to remove nickel-chromium layers to achieve high-quality pattern transfer and structure preparation.

[0086] In some embodiments of the present disclosure, the large-area phase pattern processing method further includes the step: A5, quality inspection, using a step meter to detect the depth of the phase pattern, and using a high-resolution microscope to detect the area and accuracy of the phase pattern.

[0087] like Figure 3-Figure 5 As shown, a large-area phase pattern processing method according to an embodiment of the present disclosure includes the following process:

[0088] A1. Design a phase pattern model.

[0089] B1, substrate cleaning; B2, silanization treatment; B3, photoresist dripping; B4, laser direct writing, including steps S1-S3 of the large-area phase pattern processing method.

[0090] A3, photoresist development, including step S4; secondary cleaning.

[0091] C1, chromium layer deposition; C2, photoresist removal and cleaning; C4 etching treatment; C5, chromium layer removal and cleaning.

[0092] A5. Quality inspection: The above steps have been described in detail in the above embodiments and will not be repeated here.

[0093] In step A3 of this embodiment, the substrate with the phase pattern is placed in a developer for development. After the development is completed, the substrate is rinsed with isopropyl alcohol, and then the substrate is cleaned with deionized water. The substrate is blown dry with nitrogen or air to remove residual moisture. The effect after development is observed under a microscope. Figure 4 shown.

[0094] In step A5 of this embodiment: the depth of the phase pattern is detected using a step meter, and the area and precision of the phase pattern are detected using a high-resolution microscope. The measured depth is 2 um. The processed pattern is as follows: Figure 5 shown.

[0095] Based on the above large-area phase pattern processing method, the present disclosure also provides a large-area phase pattern processing device. Figure 6-Figure 7 The device is described in detail.

[0096] Figure 6 The structural block diagram of a large-area phase pattern processing device according to an embodiment of the present disclosure is schematically shown.

[0097] like Figure 6 As shown, the large-area phase pattern processing device of this embodiment includes:

[0098] The phase pattern processing module 400 is used to divide the phase pattern to be processed into a plurality of blocks.

[0099] The mobile control module 300 is used to control the first translation stage 100 to move the corresponding position of the substrate to the light processing position based on selecting one of the multiple blocks; to control the second translation stage 200 to move within the one block and control the light processing; and to select the next block of the multiple blocks.

[0100] The first displacement stage 100 is used to drive the second displacement stage 200 to move according to the control of the movement control module 300 .

[0101] The second translation stage 200 is used to drive the substrate to move along the moving direction of the first translation stage 100 according to the control of the movement control module 300 .

[0102] The laser 500 is used to perform optical processing on the substrate based on the phase pattern to be processed and the second translation stage is moved 200.

[0103] According to an embodiment of the present disclosure,

[0104] In some embodiments of the present disclosure, the large-area phase pattern processing device further includes:

[0105] The feedback adjustment module is used to control the second translation stage 200 to perform displacement compensation according to the movement of the first translation stage 100 .

[0106] like Figure 7 The large-area phase pattern processing device of some embodiments of the present disclosure is shown. In this embodiment, a two-photon polymerization laser direct writer is used for light processing, the first displacement stage is a mechanical displacement stage 1, and the second displacement stage is a piezoelectric displacement stage 2. The sample holder 3 is set on the piezoelectric displacement stage 2, and the substrate 4 is placed on the sample holder 3. The functions of the movement control module and the feedback adjustment module can be specifically implemented by the computer 7. This embodiment is based on the movement of the mechanical displacement stage, and the movement of the piezoelectric displacement stage is controlled to perform error compensation. The specific implementation steps are as follows:

[0107] Step D1: Initialize the two-photon polymerization laser direct writer and move the mechanical translation stage 1 and the piezoelectric translation stage 2 to their initial positions.

[0108] Step D2: Based on the selected one of the multiple blocks, the mechanical displacement stage 1 is controlled to move the corresponding position of the substrate 4 to the light processing position, and the mechanical displacement stage 1 drives the piezoelectric displacement stage 2 to move, and drives the sample holder 3 and the first printing area 5 of the substrate 4 to the position facing the objective lens 6, such as Figure 7 a. Control the piezoelectric displacement stage 2 to move the substrate 4 within the first printing area 5 along the moving direction of the mechanical displacement stage 1, and first perform light processing on the first printing area 5 according to the pre-divided blocks, and first print out the first printing block 8, such as Figure 7 b.

[0109] Step D3: Select the second block of the plurality of blocks to control the mechanical displacement stage 1 to move so that the second printing area 9 corresponding to the substrate 4 moves to a position directly facing the objective lens 6. Figure 7 c. At this time, due to the error in the movement of the mechanical displacement stage, the second printing area 9 and the edge of the first printing area 8 have an overlapping area.

[0110] Step D4: The computer 7 moves the piezoelectric displacement stage 2 according to the moving direction of the mechanical displacement stage 1 and the empirical error value to perform error compensation. Figure 7 As shown in (d), after displacement compensation, the overlapping area disappears.

[0111] Step D5: Control the piezoelectric stage to move and perform optical processing on the second block, such as Figure 7 As shown in FIG. 5 , the second printing block 10 is completed. The subsequent processing of the plurality of blocks is performed according to the above steps.

[0112] In some embodiments of the present disclosure, the laser is used to perform layered light processing on the substrate based on the height position of the laser focused on the substrate. Figure 7 As shown, by adjusting the objective lens 6 of the laser, the height position at which the laser is focused on the substrate 4 is changed, thereby achieving layered light processing.

[0113] The large-area phase pattern processing device of this embodiment realizes large-area high-precision manufacturing: in the light processing process, the single processing range is usually limited, and the graphic splicing system can splice multiple small-range high-precision graphics into a large-area graphic, thereby realizing large-area, high-precision graphic manufacturing and meeting the needs of complex structures and large-area applications; improving processing efficiency and quality: the device ensures the precise alignment of each graphic block by precisely controlling the first displacement stage and the second displacement stage, reduces the graphic dislocation caused by the movement error of the first displacement stage, and improves processing efficiency and quality; adapts to complex graphics and structures: in micro-nano processing, graphics often have complex shapes and fine structures. The device of this embodiment can adapt to these complex graphics and structures, and performs real-time error compensation through the feedback control module to ensure the continuity and consistency of the entire graphic; reduces manual intervention: the graphic splicing system can automatically complete the splicing and error compensation of the graphics, reduce manual intervention, improve the degree of automation and repeatability of processing, and ensure the stability of product quality.

[0114] This embodiment achieves high-precision processing control by combining precise laser scanning positioning with the energy threshold effect of two-photon polymerization, and greatly improves the preparation efficiency and pattern quality through innovative post-processing technology. The present invention not only optimizes the application of traditional two-photon polymerization technology in large-area processing, but also breaks through the technical bottlenecks of phase pattern splicing and post-processing, and provides a new solution for efficient and accurate large-area phase pattern preparation, providing more powerful technical support for the manufacture of high-precision components in the fields of optical imaging, optical waveguides, etc.

[0115] It will be appreciated by those skilled in the art that the features described in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations or combinations are not explicitly described in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features described in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0116] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. The scope of the present disclosure is defined by the attached claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A large-area phase pattern processing method, characterized in that: Includes steps: S1, dividing the phase pattern to be processed into multiple blocks; S2, based on selecting one of the multiple blocks, controlling the first translation stage to move the corresponding position of the substrate to the light processing position; Controlling the second translation stage to move the substrate within the block based on the movement plane of the first translation stage, and performing light processing; Selecting a next block of the plurality of blocks; S3. Repeat step S2 until the processing of the multiple blocks is completed.

2. The processing method according to claim 1, characterized in that: The light treatment comprises: A single femtosecond laser is used to focus on the target position of the photoresist, and the two-photon absorption effect is used to cure the photoresist.

3. The processing method according to claim 2, characterized in that: The method uses a single beam of femtosecond laser to focus on the target position of the photoresist and utilizes the two-photon absorption effect to realize the curing of the photoresist, including: The height position of the single beam of femtosecond laser focused on the substrate is adjusted, and layered light processing is performed on the substrate based on the blocks.

4. The processing method according to claim 1, characterized in that: Before controlling the second translation stage to move the substrate within the one block, the method comprises: Based on the movement of the first translation stage, the movement of the second translation stage is controlled to perform error compensation.

5. The processing method according to claim 4, characterized in that: The error compensation for the movement of the second translation stage based on the movement of the first translation stage comprises: Based on the moving direction of the first translation stage and the empirical error value, error compensation is performed on the movement of the second translation stage.

6. The method according to claim 1, characterized in that Includes steps: S4, placing the substrate in a developer for development; S5, transferring the pattern corresponding to the phase pattern to the substrate.

7. The method according to claim 6, characterized in that The step S5 comprises: S501, evaporating chromium element onto the substrate obtained in S4; S502, treating the substrate obtained in S501 with a degumming solution; S503, etching the substrate obtained in S502 using an etcher; S504, using a chromium etching solution to remove the chromium layer of the substrate obtained in S503.

8. A large-area phase pattern processing device, characterized in that: include: A phase pattern processing module, used for dividing the phase pattern to be processed into a plurality of blocks; A movement control module, configured to control the first translation stage to move a corresponding position of the substrate to a light processing position based on selecting one of the plurality of blocks; Used to control the second translation stage to move within the one block and control the light processing; select the next block of the multiple blocks; The first translation stage is used to drive the second translation stage to move according to the control of the movement control module; A second translation stage, used for driving the substrate to move based on the movement plane of the first translation stage according to the control of the movement control module; A laser is used to perform optical processing on the substrate based on the phase pattern to be processed and the movement of the second translation stage.

9. The device according to claim 8, characterized in that include: The feedback adjustment module is used to control the second translation stage to perform displacement compensation according to the movement of the first translation stage.

10. The device according to claim 8, characterized in that The laser is used to perform layered light processing on the substrate based on the height position where it is focused on the substrate.

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