Method for dicing multiple wafers

Abstract

According to the multi-wafer cutting-up method, a plurality of wafers which are uniformly distributed around the axis of a wafer bearing table are placed on the wafer bearing table at a time, the direction of a first cutting channel of each wafer is determined through visual identification, and the direction of the first cutting channel of each wafer is adjusted to be parallel to the X-axis direction through rotation of the wafer bearing table. After the first cutting channels of the wafer are parallel to the X-axis direction, the coordinates of the first circle center of the wafer can be rapidly determined in the mode that the coordinates of the end points of the diameter of the wafer in the X-axis direction are found in an artificial assistance mode, the starting point, the ending point or the cutting length of each first cutting channel of the wafer is determined accordingly, and therefore the cutting mechanism is controlled to conduct cutting. After the first cutting channel is cut, a second circle center coordinate after the wafer rotates can be determined according to the first circle center coordinate, the rotation angle of the wafer bearing table and the axis of the wafer bearing table, and the starting point, the ending point or the cutting length of each second cutting channel of the wafer is determined based on the second circle center coordinate, so that the cutting mechanism is controlled to cut. By means of the technical scheme, one of the multiple wafers on the wafer bearing table is effectively cut, other wafers on the wafer bearing table can be sequentially cut by repeating the steps, the moving frequency of the wafer bearing table can be reduced, energy consumption can be reduced, cutting efficiency can be improved, and the requirement for cutting the multiple small wafers is effectively met.

Description

Technical Field

[0001] The invention relates to the field of semiconductor device processing, in particular to a multi-wafer dicing method. Background Art

[0002] Wafer processing involves using a dicing machine to cut the wafer into small devices.

[0003] The patent document with application publication number CN115464791A discloses a commonly used dicing machine. When dicing, a conventional dicing machine places a wafer concentrically on a wafer stage, and then uses a visual inspection device to determine whether the X-direction cutting path of the wafer on the wafer stage is parallel to the X-axis direction. If it is not parallel, the X-direction cutting path of the wafer is adjusted to be parallel to the X-axis direction by rotating the wafer stage. The X-direction cutting path is cut according to the distance from the center of the wafer to each cutting path of the wafer. After the X-direction cutting path is cut, the wafer stage drives the wafer to rotate 90°, and then the Y-direction cutting path is cut.

[0004] This method can only process one wafer at a time, has low processing efficiency, and cannot realize multiple processing of smaller wafers. Summary of the invention

[0005] The purpose of the present invention is to solve the above problems existing in the prior art and to provide a method for dicing multiple wafers.

[0006] The purpose of the present invention is achieved through the following technical solutions:

[0007] A multi-wafer dicing method comprises the following steps:

[0008] S1, after a plurality of wafers are distributed on a wafer stage around an axis of the wafer stage, the wafer stage fixes the wafers by vacuum adsorption;

[0009] S2, after the wafer stage moves to the cutting path direction recognition position, an image of a wafer on the wafer stage is collected by a visual recognition device to determine whether the first cutting path on the wafer is parallel to the X direction, if not, execute S3, if yes, execute S4;

[0010] S3, then controlling the wafer stage to rotate according to the angle between the first cutting line and the X direction so that the first cutting line on the wafer is parallel to the X direction, and then executing S4;

[0011] S4, manually controlling the visual recognition device to find one end of the diameter extending along the X-axis direction of the wafer and determine the coordinates of the one end of the diameter extending along the X-axis direction of the wafer;

[0012] S5, determining the first center coordinates of the wafer according to the determined coordinates of one end of the diameter of the wafer extending along the X-axis direction;

[0013] S6, determining the starting point and the length or the end point of each first cutting path of the wafer according to the first center coordinate of the wafer and the radius of the wafer, and controlling the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to cut each first cutting path in sequence according to the determined starting point and the length or the end point of each first cutting path;

[0014] S7, after completing the cutting of all the first cutting paths of the wafer, the wafer stage rotates 90° and determines the second center coordinates of the wafer again;

[0015] S8, determining the starting point and the length or the end point of each second cutting path of the wafer according to the coordinates of the second center of the wafer and the radius of the wafer, and controlling the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to cut each second cutting path in sequence according to the determined starting point and the length or the end point of each second cutting path;

[0016] S9, after completing the cutting of one wafer, repeat steps S2-S8 to sequentially complete the cutting of other wafers on the wafer stage.

[0017] Preferably, four wafers are placed evenly spaced around the wafer table.

[0018] Preferably, the coordinates of two points on a first cutting path on the wafer are determined by a visual recognition device, and whether the first cutting path is parallel to the X-axis direction and the angle between the first cutting path and the X-axis direction are determined based on the coordinates of the two points on the first cutting path.

[0019] Preferably, in S3, the slope of the straight line equation corresponding to the first cutting path is determined according to the coordinates of two points on the first cutting path, and the rotation direction of the wafer stage is determined according to the slope of the straight line equation corresponding to the first cutting path.

[0020] Preferably, in S4, the manually controlled driving mechanism drives the visual recognition device to move along the X-axis direction and the Y-axis direction so that the lens optical axis of the visual recognition device coincides with one end of the diameter of the wafer extending along the X-axis direction, and the coordinates of any point on the lens optical axis at this time are determined as the coordinates of one end of the diameter of the wafer extending along the X-axis direction.

[0021] Preferably, in S5, the first center coordinates of the wafer are determined according to the coordinates of one end of the diameter of the wafer extending along the X-axis direction and the radius of the wafer.

[0022] Preferably, in S6, the starting point and end point of a first cutting path are determined according to the following steps, the standard equation of the outer circumference of the wafer is determined according to the first circle center coordinates and the radius of the wafer, and the two solutions obtained by substituting the Y coordinate of any point on the first cutting path into the standard equation are used as the starting point and end point of the first cutting path.

[0023] Preferably, in S6, the cutting length of a first cutting path is determined according to the following formula:

[0024]

[0025] Among them, L 切 is the cutting length of a first cutting path; r is the radius of the wafer, and y is the distance from the center of the wafer to the first cutting path.

[0026] Preferably, in S7, the second center coordinates of the wafer are determined according to the following formula:

[0027]

[0028] Among them, X2 is the X coordinate of the second circle center coordinate; X1 is the X coordinate of the first circle center coordinate; a is the angle between the first cutting path and the X direction; S is the distance between the center of the wafer and the axis of the wafer stage; Y2 is the Y coordinate of the second circle center coordinate, and Y1 is the Y coordinate of the first circle center coordinate.

[0029] Preferably, after one wafer is cut, before the next wafer is cut, the wafer stage is rotated in the opposite direction to complete the included angle between the first cutting path of the wafer being cut and the X-axis direction.

[0030] The advantages of the technical solution of the present invention are mainly reflected in:

[0031] The method of the present invention enables a plurality of wafers uniformly distributed around the axis of the wafer stage to be placed on the wafer stage at one time, and determines the direction of the first cutting path of each wafer by visual recognition, and adjusts the direction of the first cutting path of the wafer to be parallel to the X-axis direction by rotating the wafer stage. After the first cutting path of the wafer is made parallel to the X-axis direction, the coordinates of the first center of the wafer can be quickly determined by manually assisting in finding the coordinates of the end points of the diameter of the wafer in the X-axis direction, and the starting point, end point or cutting length of each first cutting path of the wafer can be determined accordingly, so as to control the cutting mechanism to perform cutting. After the first cutting path is cut, the second center coordinates of the wafer after rotation can be determined according to the first center coordinates, the rotation angle of the wafer stage and the axis of the wafer stage, and the starting point, end point or cutting length of each cutting path of the wafer can be determined based on the second center coordinates, so as to control the cutting mechanism to perform cutting, thereby effectively realizing the cutting of one of the multiple wafers on the wafer stage, and repeating the above steps to carry out sequential cutting of other wafers on the wafer stage, which can reduce the movement frequency of the wafer stage, is beneficial to reduce energy consumption, improve cutting efficiency, and effectively meet the requirements of multiple cutting of small wafers.

[0032] The present invention allows four wafers to be evenly distributed on the wafer stage in a circle, and can effectively rotate another wafer into the observation range of the visual recognition device after each 90° rotation of the wafer stage, thereby facilitating reduction of adjustments to the wafer stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic diagram of a scriber cutter of the present invention;

[0034] Figure 2 is a flow chart of a multi-wafer dicing method of the present invention;

[0035] Figure 3 It is a schematic diagram of placing four wafers equally or approximately equally divided on a wafer stage in a multi-wafer dicing method of the present invention and identifying two points on a first dicing path of a first wafer by a visual recognition device;

[0036] Figure 4 is a schematic diagram of adjusting the first cutting path of the first wafer to be parallel to the X-axis direction in the present invention;

[0037] Figure 5 It is a schematic diagram of the principle of determining the second center coordinates of the first wafer in the present invention. In the figure, the dotted circle on the left represents the position of the first wafer before the wafer stage rotates, and the solid circle on the lower side represents the position of the first wafer after the wafer stage rotates 90° counterclockwise. DETAILED DESCRIPTION

[0038] The purpose, advantages and features of the present invention will be illustrated and explained by the non-limiting description of the following preferred embodiments. These embodiments are only typical examples of the application of the technical solution of the present invention, and any technical solution formed by equivalent replacement or equivalent transformation falls within the scope of protection claimed by the present invention.

[0039] In the description of the scheme, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0040] Example 1

[0041] The following is an explanation of the multi-wafer dicing method disclosed by the present invention in conjunction with the accompanying drawings. The multi-wafer dicing method is based on a dicing machine, which is the same as the existing dicing machine, as shown in the attached drawings. Figure 1 As shown, the dicing machine includes a wafer table 100, a driving mechanism 200 for driving the wafer table 100 to move horizontally, and a dicing mechanism 300. The driving mechanism 200 drives the wafer table 100 to move horizontally along the X-axis direction. Its specific structure is the same as the prior art and will not be described in detail here. The dicing mechanism 300 includes a main shaft and a cutter driven by the main shaft to rotate. The axis of the cutter is parallel to the axis of the rotating shaft, and the main shaft is driven by the main shaft driving assembly to translate along the axis of the main shaft, and the axial direction of the main shaft is defined as the Y-axis direction, and the Y-axis direction is perpendicular to the X-axis direction. At the same time, the dicing machine also includes a visual recognition device 500, and the visual recognition device 500 is connected to a driving mechanism 600 that drives it to move along the X-axis direction and the Y-axis direction. The visual recognition device 500 can be a known microscope camera, and the driving mechanism 600 is, for example, two vertically connected servo modules. Its specific structure is a known technology and will not be described in detail here. In order to facilitate the determination of the position coordinates, a plane coordinate system can be constructed with the X-axis direction as the X-axis, the Y-axis direction as the Y-axis, and the center of the table of the wafer table located at the identification position in the cutting path direction as the origin 0.

[0042] As attached Figure 2 As shown, the multi-wafer dicing method comprises the following steps:

[0043] S1, when the wafer stage 100 is located at the loading and unloading position, after a plurality of wafers 700 are distributed on the wafer stage 100 around the axis of the wafer stage 100, the wafer stage 100 fixes the wafers 700 by vacuum adsorption; preferably, as shown in the attached Figure 3 As shown, four wafers 700 are manually placed on the wafer stage 100 in equal or approximately equal portions of the circumference. When placing the wafers manually, the first cutting path of each wafer is made to be parallel to the X-axis direction as much as possible, and when the wafer stage 100 is moved to the cutting path direction identification position, the first wafer 701 thereon is within the observation range of the visual recognition device 500.

[0044] S2, after the wafer stage 100 moves to the cutting path direction identification position, the visual recognition device 500 collects the image of the first wafer 701 on the wafer stage 100 within its observation range (here, the observation range refers to the range within which the visual recognition device can move to and collect images) to determine whether the first cutting path 710 on the first wafer 701 is parallel to the X direction. If not, execute S3; if yes, execute S4;

[0045] Specifically, as attached Figure 3 As shown, the coordinates of two points on a first cutting path 710 on the first wafer 701 are determined by the visual recognition device 500. For example, the driving mechanism 600 can be manually controlled to drive the visual recognition device 500 to move so that the intersection of the crosshairs in the viewfinder of the visual recognition device 500 is located at the first point on the first cutting path 710, and the X coordinate and Y coordinate of any point on the optical axis of the lens of the visual recognition device 500 are recorded as the coordinates of the first point on the first cutting path 710. Then, the driving mechanism 600 is controlled to drive the visual recognition device 500 to move so that the intersection of the crosshairs in the viewfinder of the visual recognition device 500 is located at the second point of the first cutting path 710, and the X coordinate and Y coordinate of any point on the optical axis of the lens of the visual recognition device 500 are recorded as the coordinates of the second point on the first cutting path 710.

[0046] Next, the slope of the straight line equation corresponding to the first cutting road 710 can be determined based on the coordinates of the two points on the first cutting road 710, and then, whether the first cutting road 710 is parallel to the X direction can be determined based on the slope of the straight line equation corresponding to the first cutting road 710 and the slope of the X-axis. Specifically, if it is determined that the slope of the straight line equation corresponding to the first cutting road 710 is the same as the slope of the X-axis or the difference is within a set range, it can be determined that the first cutting road 710 is parallel to the X-axis; conversely, if it is determined that the slope of the straight line equation corresponding to the first cutting road 710 is different from the slope of the X-axis or the difference is not within a set range, it can be determined that the first cutting road 710 is not parallel to the X-axis.

[0047] Of course, it is also possible to determine whether the first cutting path 710 is parallel to the X-axis based on the Y coordinates of the two points on the first cutting path 710. For example, when it is determined that the Y coordinates of the two points on the first cutting path 710 are the same or the difference is within a set range, it can be determined that the first cutting path 710 is parallel to the X-axis. Conversely, when it is determined that the Y coordinates of the two points on the first cutting path 710 are different or the difference exceeds the set range, it can be determined that the first cutting path 710 is not parallel to the X-axis.

[0048] Of course, when it is observed that the intersection of the cross lines in the viewfinder of the visual recognition device 500 is on the first cutting road, the visual recognition device 500 can be translated a certain distance and the intersection of the cross lines in the viewfinder can be observed again to determine whether it is on the first cutting road. If so, it is determined that the first cutting road is parallel to the X-axis direction.

[0049] Of course, in another embodiment, the driving mechanism 600 can also be controlled by a program to automatically control the movement of the visual recognition device 500, and when determining the coordinates of the first point on a first cutting road 710, it is determined by image analysis whether the center of the image captured by the visual recognition device 500 at a position is on the first cutting road 710. If so, the coordinates of any point on the optical axis of the lens of the visual recognition device 500 at this time can be recorded as the coordinates of the first point on the first cutting road 710. If not, the visual recognition device 500 can be adjusted to capture the image again and determine whether the center of the captured image is on the first cutting road 710. Repeat the above steps until the center of the image captured by the visual recognition device 500 at a position is on the first cutting road 710. Then, the visual recognition device 500 can be translated along the X-axis direction for a certain distance and the image can be captured again. If it is determined that the center of the image captured at this time is on the first cutting road 710, it can be determined that the first cutting road 710 is parallel to the X-axis direction. On the contrary, if it is determined that the center of the image is not on the first cutting road, it can be determined that the first cutting road 710 is not parallel to the X-axis. Moreover, at this time, the position of the visual recognition device 500 can be adjusted according to the position of the image center and the first cutting line on the image so that the center of the image captured after the visual recognition device 500 adjusts its position is located on the first cutting line, thereby obtaining the coordinates of the second point on the first cutting line.

[0050] S3, then according to the angle between the first cutting path 710 and the X direction, the wafer stage 100 is controlled to rotate so that the first cutting path 710 on the first wafer 701 is parallel to the X direction, and then S4 is executed; specifically, the angle between the first cutting path 710 and the X-axis direction can be determined according to the slope of the straight line equation corresponding to the first cutting path 710 and the slope of the X-axis. For example, if the angle a between the first cutting path 710 and the X direction is determined to be 5°, the wafer stage 100 is controlled to rotate 5°. The specific rotation direction of the wafer stage 100 can be determined according to the slope of the straight line equation corresponding to the first cutting path 710, for example, as shown in the attached figure. Figure 3 As shown in FIG. 1 , the slope of the straight line equation corresponding to the first cutting path 710 is a positive value, and the wafer stage 100 rotates clockwise along the rotation direction F so that the first cutting path 710 of the wafer on the wafer stage is parallel to the X-axis direction, as shown in FIG. Figure 4 When the slope of the straight line equation corresponding to the first cutting path 710 is negative, the wafer stage 100 rotates counterclockwise.

[0051] S4, manually controlling the visual recognition device 500 to find one end of the diameter 730 extending along the X-axis direction on the first wafer 701 and determining the coordinates of the end of the diameter 730 extending along the X-axis direction of the first wafer 701; specifically, manually controlling the driving mechanism 600 to drive the visual recognition device 500 to move along the X-axis direction and the Y-axis direction so that the lens optical axis of the visual recognition device 500 coincides with the end of the diameter 730 extending along the X-axis direction of the first wafer 701, and determining the coordinates of any point on the lens optical axis at this time as the coordinates of the end of the diameter 730 extending along the X-axis direction of the first wafer 701. Specifically, when determining whether the optical axis of the lens of the visual recognition device 500 coincides with one end of the diameter 730 of the first wafer 701 extending along the X-axis direction, it is to observe whether the intersection of the crosshairs in the viewfinder of the visual recognition device 500 observed by the human eye coincides with one end of the diameter 730 of the first wafer 701 extending along the X-axis direction. If so, it is determined that the optical axis of the lens of the visual recognition device 500 coincides with one end of the diameter 730 of the first wafer 701 extending along the X-axis direction, as shown in the attached figure. Figure 4 shown.

[0052] S5, determining the first center coordinates of the first wafer 701 according to the determined coordinates of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction; specifically, determining the first center coordinates of the first wafer 701 according to the coordinates of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction and the radius of the first wafer 701. For example, the determined coordinates of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction are the coordinates of the left end of the diameter 730 of the first wafer 701 extending along the X-axis direction (X 端 , Y 端 ), at this time, the first center coordinate (X1, Y1) of the first wafer 701 can be determined according to the radius r of the first wafer 701 as (X 端 +r,Y 端 ).

[0053] S6, determining the starting point and the length or the end point of each first cutting path 710 of the first wafer 701 according to the first center coordinates of the first wafer 701 and the radius of the first wafer 701, and controlling the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to cut each first cutting path 710 in sequence according to the determined starting point and the length or the end point of each first cutting path 710;

[0054] Determine the starting point and end point of a first cutting path 710 according to the following steps, determine the standard equation of the outer circumference of the first wafer 701 according to the first circle center coordinates and the radius of the first wafer 701, substitute the Y coordinate of any point on the first cutting path 710 into the standard equation to obtain the two solutions as the starting point and end point of the first cutting path 710, and any point in the two solutions can be selected as the starting point.

[0055] When it is necessary to determine the cutting length of each first cutting street 710, as shown in the attached Figure 4 As shown, the cutting length of a first cutting path 710 is determined according to the following formula:

[0056]

[0057] Among them, L 切 is the cutting length of a first cutting path 710; r is the radius of the first wafer 701, y is the distance between the center of the first wafer 701 and the first cutting path 710, and the distance between the center of the first wafer 701 and each of the cutting paths is a predetermined value, which can be determined in advance and stored in the memory, and can be directly called in subsequent calculations.

[0058] Furthermore, when cutting each first cutting lane, the position of the cutter of the cutting mechanism is adjusted according to the Y coordinate of the starting point of each first cutting lane 710, and the position of the wafer stage is adjusted according to the X coordinate of the starting point of each first cutting lane so that the cutting point of the cutter is located at the starting point of the first cutting lane, and the wafer stage is controlled to translate according to the end point or cutting length of the first cutting lane to achieve the cutting of the first cutting lane.

[0059] S7, after the first cutting path 710 is cut, the wafer stage 100 rotates 90° and then determines the second center coordinates of the first wafer 701 again; after the wafer stage 100 rotates 90°, the second cutting path 720 of the first wafer 701 rotates to extend along the X-axis direction, and the second cutting path 720 can be cut by the cutter of the cutting mechanism. Since the center position of the first wafer 701 changes after the wafer stage 100 rotates, it is necessary to determine the center coordinates of the first wafer 701 after the rotation, that is, the second center coordinates.

[0060] Specifically, as attached Figure 5 As shown, the second center coordinates of the first wafer 701 are determined according to the following formula:

[0061]

[0062] Among them, X2 is the X coordinate of the second center coordinate; X1 is the X coordinate of the first center coordinate; a is the angle between the first cutting path 710 and the X direction; S is the distance between the center of the first wafer 701 and the axis of the wafer stage 100. When the wafer stage 100 identifies the position in the cutting path direction, the X coordinate and Y coordinate of any point on its axis are known. Therefore, the distance between the center of the first wafer 701 and the axis of the wafer stage 100 can be calculated based on the determined first center coordinate and the X coordinate and Y coordinate of any point on its axis when the wafer stage 100 identifies the position in the cutting path direction. Y2 is the Y coordinate of the second center coordinate, and Y1 is the Y coordinate of the first center coordinate.

[0063] When determining X2 and Y2, whether to use a plus sign or a minus sign at the plus and minus sign can be determined based on the position of the wafer before the wafer stage rotates 90° and the position of the wafer after the wafer stage rotates 90°. For example, when cutting the first cutting line on the wafer, the wafer is located on the left side of the wafer stage, and after the wafer stage rotates 90°, the position of the wafer is located on the right side of the wafer before the wafer stage rotates. At this time, the plus sign can be used to calculate the second center coordinate. Conversely, if the wafer after the wafer stage rotates is located on the left side of the wafer before the wafer stage rotates, the minus sign can be used to calculate the second center coordinate.

[0064] S8, determine the starting point and cutting path length or end point of each second cutting path 720 of the first wafer 701 according to the second center coordinates of the first wafer 701 and the radius of the first wafer 701, and control the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to sequentially cut each second cutting path 720 according to the determined starting point and cutting path length or end point of each second cutting path 720. The method for determining the starting point and cutting path length or end point of each second cutting path and the cutting method are the same as the method for determining the starting point and cutting path length or end point of the first cutting path and the cutting method, and are not described in detail here.

[0065] S9, after completing the cutting of the first wafer 701, repeat steps S2-S8 to sequentially complete the cutting of other wafers 700 on the wafer stage 100.

[0066] That is, in S7, after the wafer stage 100 rotates 90°, the second wafer 702 will rotate into the recognition range of the visual recognition device 500, so that the second wafer 702 is cut according to steps S2-S8. Then, the third wafer 703 is cut according to steps S2-S8. Finally, the fourth wafer 704 is cut according to steps S2-S8. After the fourth wafer 704 is cut, the wafer stage 100 moves back to the loading and unloading position for unloading and reloading.

[0067] Furthermore, after one wafer is cut, before the next wafer is cut, the wafer stage is rotated in the reverse direction to complete the angle between the first cutting path 710 of the wafer that has been cut and the X-axis direction. For example, when it is determined that the angle between the first cutting path 710 of the first wafer and the X-axis is 5° and the wafer is adjusted by rotating clockwise, the wafer stage is rotated counterclockwise by 5° after the first wafer is cut. This is because the first cutting paths 710 of other wafers on the wafer stage may be initially parallel to the X-axis direction or the Y-axis direction, and there is no need to rotate the wafer stage for direction adjustment. Therefore, after each wafer is cut, the angle between the first cutting path 710 of the wafer that has been cut and the X-axis direction is rotated in the reverse direction, so that the first cutting path 710 of the next wafer can be restored to a state parallel to the X-axis direction or the Y-axis direction.

[0068] There are many implementation methods of the present invention, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A method for dicing multiple wafers, characterized in that: The steps include: S1, after a plurality of wafers are distributed on a wafer stage around an axis of the wafer stage, the wafer stage fixes the wafers by vacuum adsorption; S2, after the wafer stage moves to the cutting path direction recognition position, an image of a wafer on the wafer stage is collected by a visual recognition device to determine whether the first cutting path on the wafer is parallel to the X direction, if not, execute S3, if yes, execute S4; S3, then controlling the wafer stage to rotate according to the angle between the first cutting line and the X direction so that the first cutting line on the wafer is parallel to the X direction, and then executing S4; S4, manually controlling the visual recognition device to find one end of the diameter extending along the X-axis direction of the wafer and determine the coordinates of the one end of the diameter extending along the X-axis direction of the wafer; S5, determining the first center coordinates of the wafer according to the determined coordinates of one end of the diameter of the wafer extending along the X-axis direction; S6, determining the starting point and the length or the end point of each first cutting path of the wafer according to the first center coordinate of the wafer and the radius of the wafer, and controlling the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to cut each first cutting path in sequence according to the determined starting point and the length or the end point of each first cutting path; S7, after completing the cutting of all the first cutting paths of the wafer, the wafer stage rotates 90° and determines the second center coordinates of the wafer again; S8, determining the starting point and the length or the end point of each second cutting path of the wafer according to the coordinates of the second center of the wafer and the radius of the wafer, and controlling the cutting mechanism to cooperate with the driving mechanism for driving the wafer stage to translate to cut each second cutting path in sequence according to the determined starting point and the length or the end point of each second cutting path; S9, after completing the cutting of one wafer, repeat steps S2-S8 to sequentially complete the cutting of other wafers on the wafer stage.

2. The multi-wafer dicing method according to claim 1, characterized in that: Four wafers are evenly placed on the wafer stage in a circle.

3. The multi-wafer dicing method according to claim 1, characterized in that: The coordinates of two points on a first cutting path on the wafer are determined by a visual recognition device, and whether the first cutting path is parallel to the X-axis direction and the angle between the first cutting path and the X-axis direction are determined according to the coordinates of the two points on the first cutting path.

4. The multi-wafer dicing method according to claim 3, characterized in that: In S3, the slope of the straight line equation corresponding to the first cutting path is determined according to the coordinates of two points on the first cutting path, and the rotation direction of the wafer stage is determined according to the slope of the straight line equation corresponding to the first cutting path.

5. The multi-wafer dicing method according to claim 1, characterized in that: In S4, the manually controlled driving mechanism drives the visual recognition device to move along the X-axis direction and the Y-axis direction so that the lens optical axis of the visual recognition device coincides with one end of the diameter of the wafer extending along the X-axis direction, and the coordinates of any point on the lens optical axis at this time are determined as the coordinates of one end of the diameter of the wafer extending along the X-axis direction.

6. The multi-wafer dicing method according to claim 1, characterized in that: In S5 , the first center coordinates of the wafer are determined according to the coordinates of one end of the diameter of the wafer extending along the X-axis direction and the radius of the wafer.

7. The multi-wafer dicing method according to claim 1, characterized in that: In S6, the starting point and end point of a first cutting path are determined according to the following steps, the standard equation of the outer circumference of the wafer is determined according to the first circle center coordinates and the radius of the wafer, and the two solutions obtained by substituting the Y coordinate of any point on the first cutting path into the standard equation are used as the starting point and end point of the first cutting path.

8. The method for dicing multiple wafers according to claim 1, wherein: In S6, the cutting length of a first cutting path is determined according to the following formula: Among them, L 切 is the cutting length of a first cutting path; r is the radius of the wafer, and y is the distance from the center of the wafer to the first cutting path.

9. The multi-wafer dicing method according to claim 1, characterized in that: In S7, the second center coordinates of the wafer are determined according to the following formula: Among them, X2 is the X coordinate of the second circle center coordinate; X1 is the X coordinate of the first circle center coordinate; a is the angle between the first cutting path and the X direction; S is the distance between the center of the wafer and the axis of the wafer stage; Y2 is the Y coordinate of the second circle center coordinate, and Y1 is the Y coordinate of the first circle center coordinate.

10. The method for dicing multiple wafers according to any one of claims 1 to 9, characterized in that: After one wafer is cut, before the next wafer is cut, the wafer stage is rotated in the opposite direction to complete the included angle between the first cutting path of the wafer being cut and the X-axis direction.

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