Crystal growth equipment

Abstract

The invention discloses crystal growth equipment which comprises a furnace body, a crucible, a heat preservation layer, an infrared thermometer and a purging gas pipe, the furnace body is provided with a furnace cavity, and a temperature measuring hole communicated with the furnace cavity is formed in the top end of the furnace body; the heat preservation layer comprises a cylinder heat preservation layer and an upper cover heat preservation layer, and the upper cover heat preservation layer is provided with a first through hole opposite to the temperature measuring hole. The infrared thermometer is provided with a window which is positioned on one side of the temperature measuring hole; a first outlet of the first gas pipe is adjacent to the other side of the temperature measuring hole, a second outlet of the second gas pipe is adjacent to the first through hole, and included angles are formed between the gas outlet directions of the first outlet and the second outlet and the height direction of the furnace body. Therefore, sublimation components, impurity particles and the like moving upwards in the furnace chamber cannot gather and deposit towards the interior of the first through hole and the direction of the temperature measuring hole through purging of the purging gas pipe, so that the smoothness of the first through hole and the temperature measuring hole and the cleanliness of the window can be improved, and the temperature measuring accuracy, continuity and stability are further improved.

Description

Technical Field

[0001] The present application relates to the technical field of crystal growth equipment, and in particular to a crystal growth equipment. Background Art

[0002] Physical Vapor Transport (PVT) is a widely used silicon carbide (SiC) crystal growth technology. This method mainly uses a heating source to sublimate the silicon carbide raw material into a gaseous state, and then re-condenses and crystallizes in a lower temperature area to form silicon carbide crystals. In the PVT method of silicon carbide crystal growth process, the establishment and control of the axial temperature gradient is one of the key links. In order to obtain high-quality silicon carbide crystals, it is usually necessary to maintain a relatively large axial temperature difference, generally between 80°C and 120°C. Moreover, during the entire crystal growth process, the established axial temperature gradient must remain stable. Due to this feature, some sublimated silicon carbide components will escape from the crucible used to hold the silicon carbide raw material during the growth process and converge upward along the axial temperature gradient. These sublimated silicon carbide components are often mixed with some burned impurity particles.

[0003] At the same time, due to the extremely high growth temperature of silicon carbide crystals (usually exceeding 2000°C), its growth temperature can generally only be monitored by infrared temperature measurement technology. However, in the infrared temperature measurement process, it is inevitable that the gaseous components escaping from the crucible and some of the burnt impurity particles will move upward with the airflow. When these gaseous components mixed with some of the burnt impurity particles move to the quartz lens of the infrared temperature measurement device, they are easy to adhere to the quartz lens, which will affect the transmittance of the quartz lens and interfere with the measurement of thermal radiation, thereby causing deviations in temperature measurement and reducing the final temperature measurement accuracy. In addition, with the accumulation of too many impurity particles moving upward, the temperature measurement hole may be completely blocked, which will directly cause the temperature measurement system to fail and affect the continuity and stability of the temperature measurement. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present application is to provide a crystal growth device, which can prevent the sublimated components and impurity particles moving upward in the furnace chamber from gathering and depositing in the first through hole and the direction of the temperature measuring hole by purging the purge gas pipe, thereby improving the patency of the first through hole and the temperature measuring hole and the cleanliness of the window, thereby improving the accuracy, continuity and stability of temperature measurement.

[0005] According to a crystal growth device of an embodiment of the first aspect of the present application, the crystal growth device includes: a furnace body, a crucible, a heat preservation layer, an infrared thermometer and a purge air pipe, the furnace body has a furnace cavity, and the top of the furnace body is provided with a temperature measuring hole connected to the furnace cavity; the crucible is arranged in the furnace cavity, and the crucible includes a barrel and an upper cover; the heat preservation layer includes a barrel insulation layer and an upper cover insulation layer, the upper cover insulation layer is located above the upper cover, and the upper cover insulation layer has a first through hole opposite to the temperature measuring hole; the infrared thermometer is arranged at the top of the furnace body, and the infrared thermometer has a window, and the window is located on one side of the temperature measuring hole; the purge air pipe includes a first air pipe and a second air pipe arranged in the furnace body, the first outlet of the first air pipe is adjacent to the other side of the temperature measuring hole, the second outlet of the second air pipe is adjacent to the first through hole, and the gas outlet directions of the first outlet and the second outlet are both at an angle with the height direction of the furnace body, and the first inlet of the first air pipe and the second inlet of the second air pipe are both connected to an external air source.

[0006] According to the crystal production equipment of the present application, the other side of the temperature measuring hole and the vicinity of the first through hole can be purged through the purge air pipe, so that the sublimated components and impurity particles moving upward in the furnace chamber will not gather and deposit in the first through hole and in the direction of the temperature measuring hole, thereby protecting the first through hole, the temperature measuring hole and the window from contamination and blockage by the sublimated components and impurity particles, improving the patency of the first through hole and the temperature measuring hole and the cleanliness of the window, thus improving the temperature measurement accuracy, continuity and stability of the infrared thermometer for the preset temperature measurement area in the furnace chamber, and providing a reliable temperature control basis for the preparation of high-quality crystals.

[0007] According to some embodiments of the present application, a flange is provided at the top of the furnace body, the first air pipe includes a first pipe segment and a second pipe segment connected to each other, and the second air pipe includes a third pipe segment and a fourth pipe segment connected to each other, wherein the first pipe segment and the third pipe segment are arranged at intervals on the flange and penetrate the flange, the first inlet is formed at one end of the first pipe segment, the second inlet is formed at one end of the third pipe segment, the second pipe segment and the fourth pipe segment both extend in a horizontal direction, and the first outlet is formed at one end of the second pipe segment away from the first pipe segment, and the second outlet is formed at one end of the fourth pipe segment away from the third pipe segment.

[0008] In some embodiments, in the height direction of the furnace body, the length of the first air pipe extending into the furnace cavity is 5 cm, and the distance between the second air pipe and the upper cover insulation layer is 1 cm.

[0009] According to some embodiments of the present application, a graphite ring is provided on the upper cover insulation layer, and at least a portion of the graphite ring extends into the first through hole and fits against the inner wall of the first through hole.

[0010] Furthermore, the insulation layer also includes: an intermediate insulation layer, the intermediate insulation layer is arranged between the upper cover insulation layer and the upper cover, and is connected to the cylinder insulation layer, a second through hole is formed on the intermediate insulation layer, the second through hole is opposite to the first through hole and the temperature measuring hole, wherein a graphite ring is arranged on the intermediate insulation layer, and at least part of the graphite ring extends into the second through hole and fits against the inner wall of the second through hole.

[0011] Furthermore, the upper cover insulation layer and the middle insulation layer are both constructed as flexible parts, and the graphite ring is suitable for being fixed to the flexible parts by snap connection.

[0012] According to some embodiments of the present application, the crystal growth equipment also includes: a water cooling plate, the water cooling plate is connected to the top of the furnace body and is covered on the other side of the temperature measuring hole, the middle part of the water cooling plate has a third through hole opposite to the temperature measuring hole, the water cooling plate has a cooling flow channel, and the cooling flow channel is suitable for supplying coolant to flow so as to cool the sublimated components and impurity particles deposited on the outer wall of the water cooling plate.

[0013] Furthermore, the water cooling plate includes a connecting portion, a horizontal portion and an extending portion which are arranged in sequence, the connecting portion is connected to the furnace body, the extending portion is arranged at the outer periphery of the horizontal portion and extends away from the connecting portion, the third through hole is arranged on the horizontal portion, and the distance between the lower surface of the horizontal portion and the upper surface of the upper cover insulation layer is 30cm to 40cm.

[0014] In some embodiments, the crystal growth equipment further includes: an electrical generating device, a purification channel is formed in the electrical generating device, the electrical generating device is arranged outside the furnace body, and the purification channel is constructed as a part of the temperature measuring hole, and / or the electrical generating device is arranged in the furnace cavity, and one end of the purification channel is connected to the other side of the temperature measuring hole, and the other end is connected to the furnace cavity; wherein the electrical generating device includes a plurality of negative electrode generators arranged at intervals around the outer periphery of the axis of the temperature measuring hole, a plurality of strong electric positive electrode parts arranged at the outer periphery of the plurality of negative electrode generators and corresponding to the plurality of negative electrode generators one by one, and an ash collection layer arranged between the plurality of negative electrode generators and the plurality of strong electric positive electrode parts, the ash collection layer defines the purification channel on the side radially facing the plurality of negative electrode generators, the negative electrode generator can be selectively connected to the negative electrode of the power supply, and make the impurities in the purification channel negatively charged, the strong electric positive electrode part can be selectively connected to the positive electrode of the power supply, and make the ash collection layer positively charged to adsorb the negatively charged impurities in the purification channel.

[0015] Furthermore, the crystal growth equipment also includes: an ultrasonic vibrator, which is arranged at the periphery of the electrical generating device and is suitable for increasing the collision rate and movement speed of the impurity particles in the purification channel.

[0016] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0018] Figure 1 is a schematic diagram of a crystal growth device according to an embodiment of the first aspect of the present application;

[0019] Figure 2 is a schematic diagram of a crystal growth device according to an embodiment of the second aspect of the present application;

[0020] Figure 3 yes Figure 2 A partial enlarged view of the middle part;

[0021] Figure 4 is a schematic diagram of a crystal growth device according to an embodiment of the third aspect of the present application;

[0022] Figure 5 is a schematic diagram of a crystal growth device according to an embodiment of the fourth aspect of the present application;

[0023] Figure 6 It is a schematic diagram of the coordination of an electrical generating device, an infrared thermometer, a flange, etc. according to some embodiments of the present application;

[0024] Figure 7 is a schematic diagram of a crystal growth device according to an embodiment of the fifth aspect of the present application;

[0025] Figure 8 is a schematic diagram of a crystal growth device according to an embodiment of the sixth aspect of the present application;

[0026] Fig. 9 It is a schematic diagram of the cooperation between an electrical generating device and an ultrasonic vibrator according to some embodiments of the present application.

[0027] Reference numerals:

[0028] 1000. Crystal growth equipment; 2000. Crystal growth raw materials; 3000. Seed crystal;

[0029] 10. furnace body; 10a. furnace chamber; 10b. temperature measuring hole; 11. flange;

[0030] 20. crucible; 21. cylinder; 22. upper cover;

[0031] 31, cylinder insulation layer; 32, upper cover insulation layer; 32a, first through hole; 33, middle insulation layer; 33a, second through hole;

[0032] 40. Infrared thermometer; 41. Window;

[0033] 50a, first inlet; 50b, first outlet; 50c, second inlet; 50d, second outlet;

[0034] 51, first air pipe; 51a, first pipe section; 51b, second pipe section;

[0035] 52, second air pipe; 52a, third pipe section; 52b, fourth pipe section;

[0036] 60. graphite ring; 61. first ring segment; 62. second ring segment;

[0037] 70, water cooling plate; 70a, third through hole; 71, connecting portion; 72, horizontal portion; 73, extending portion;

[0038] 80. Electric generator; 80a. Purification channel;

[0039] 81. Negative electrode generator; 82. Strong positive electrode; 83. Ash collection layer; 84. Grounding resistance;

[0040] 90. Ultrasonic vibrator;

[0041] 100. Induction coil;

[0042] 110. Graphite tray;

[0043] 120. Process air pipe. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] Unless otherwise defined, all technical and scientific terms used in this application have the same meanings as those commonly understood by technicians in the technical field of this application; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned drawings and any variations thereof are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order or a primary and secondary relationship.

[0046] Reference to "embodiment" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiment may be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments.

[0047] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "attached" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0048] The term "and / or" in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this application generally indicates that the associated objects before and after are in an "or" relationship.

[0049] In the embodiments of the present application, the same reference numerals represent the same components, and for the sake of brevity, detailed descriptions of the same components are omitted in different embodiments. It should be understood that the thickness, length, width and other dimensions of various components in the embodiments of the present application shown in the drawings, as well as the overall thickness, length, width and other dimensions of the integrated device are only exemplary descriptions and should not constitute any limitation to the present application.

[0050] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0051] In the description of the present application, a first feature being “on” or “under” a second feature may include that the first and second features are directly in contact with each other, or may include that the first and second features are not in direct contact with each other but are in contact with each other via another feature therebetween.

[0052] In the description of the present application, “above”, “over” and “above” a first feature to a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.

[0053] The term "plurality" used in the present application refers to two or more (including two).

[0054] Reference below Figure 1-Figure 9 A crystal growth apparatus 1000 according to an embodiment of the present application is described.

[0055] like Figure 1 As shown, according to the crystal growth equipment 1000 of the first embodiment of the present application, the crystal growth equipment 1000 includes: a furnace body 10, a crucible 20, an insulation layer, an infrared thermometer 40 and a purge gas pipe.

[0056] The furnace body 10 has a furnace cavity 10a, and a temperature measuring hole 10b communicating with the furnace cavity 10a is provided at the top of the furnace body 10; the crucible 20 is arranged in the furnace cavity 10a, and the crucible 20 includes a cylinder 21 and an upper cover 22; the insulation layer includes a cylinder insulation layer 31 and an upper cover insulation layer 32, the upper cover insulation layer 32 is located above the upper cover 22, and the upper cover insulation layer 32 has a first through hole 32a opposite to the temperature measuring hole 10b; the infrared thermometer 40 is arranged at the top of the furnace body 10, and the infrared thermometer 40 has a viewing window 41, through which the infrared thermometer 40 can be viewed. The window 41 is located on one side of the temperature measuring hole 10b; the purge air pipe includes a first air pipe 51 and a second air pipe 52 arranged on the furnace body 10, the first outlet 50b of the first air pipe 51 is adjacent to the other side of the temperature measuring hole 10b, the second outlet 50d of the second air pipe 52 is adjacent to the first through hole 32a, and the gas outlet directions of the first outlet 50b and the second outlet 50d are both at an angle to the height direction of the furnace body 10, and the first inlet 50a of the first air pipe 51 and the second inlet 50c of the second air pipe 52 are both connected to an external gas source.

[0057] Specifically, the furnace body 10 is the main part of the crystal growth device 1000. The furnace body 10 can provide a relatively closed environment, namely, the furnace chamber 10a, to meet and control the growth environment conditions required for the crystal. At the same time, the furnace body 10 is also used to install and accommodate the components required for crystal growth (such as the crucible 20, the insulation layer, etc.). The top of the furnace body 10 is provided with a temperature measuring hole 10b connected to the furnace chamber 10a. The temperature measuring hole 10b can allow infrared radiation to pass through so that the infrared thermometer 40 can measure the temperature in the furnace chamber 10a; the crucible 20 can be used to load the crystal growth raw material 2000. The crucible 20 is composed of a cylinder 21 and an upper cover 22. The cylinder 21 is used to carry the crystal growth raw material 2000, and the upper cover 22 plays a sealing and heat insulation role; the insulation layer is used to improve the heat preservation performance to maintain the high temperature thermal field environment in the furnace chamber 10a to ensure the temperature conditions required for crystal growth. The cylinder insulation layer 31 in the insulation layer can be coated on the outer periphery of the cylinder 21, and the upper cover insulation layer 32 is located above the upper cover 22. The upper cover insulation layer 32 is provided with a first through hole 32a opposite to the temperature measuring hole 10b, so that the infrared thermometer 40 can accurately measure the temperature of the preset temperature measuring area in the furnace cavity 10a (such as the side of the upper cover 22 away from the cylinder 21 in the thickness direction); the infrared thermometer 40 can be fixedly connected to the furnace body by fasteners (such as bolts, screws) and flanges 11. The top of the furnace body 10 is provided with an infrared thermometer 40, and the infrared thermometer 40 is located outside the furnace body 10 (i.e., the side of the furnace body 10 away from the furnace cavity 10a in the thickness direction). The infrared thermometer 40 has a window 41, and the window 41 can be located on the side of the temperature measuring hole 10b axially away from the furnace cavity 10a. The window 41 can isolate the infrared thermometer 40 from the extreme environment in the high-temperature furnace cavity 10a, and can protect the infrared thermometer 40 from being damaged or disturbed by the high temperature, sublimated components, and impurity particles in the furnace cavity 10a. The window 41 can be constructed of a high-transmittance material such as a quartz wafer, and the window 41 allows infrared radiation to pass through, thereby realizing non-contact temperature measurement of a preset temperature measurement area in the furnace cavity 10a.

[0058] In the embodiment of the present application, the purge gas pipe includes a first gas pipe 51 and a second gas pipe 52. The first inlet 50a of the first gas pipe 51 and the second inlet 50c of the second gas pipe 52 are both connected to an external gas source for introducing an inert gas (such as argon). The first gas pipe 51 flows out the purge gas through the other side of the first outlet 50b adjacent to the temperature measuring hole 10b (i.e., the side of the temperature measuring hole 10b axially close to the furnace chamber 10a), and the second gas pipe 52 flows out the purge gas through the second outlet 50d adjacent to the first through hole 32a. In addition, the first outlet 50 b. The gas outlet direction of the second outlet 50d has an angle with the height direction of the furnace body 10, so that through the purge of the first air pipe 51 and the second air pipe 52, an inclined purge airflow or a horizontal purge airflow can be generated near the other side of the temperature measuring hole 10b and near the first through hole 32a, changing the movement direction of the sublimated components and impurity particles moving upward to the other side of the temperature measuring hole 10b and near the first through hole 32a, so that the sublimated components and impurity particles will not gather and deposit in the first through hole 32a and in the direction of the temperature measuring hole 10b.

[0059] According to the crystal production equipment of the present application, the other side of the temperature measuring hole 10b and the vicinity of the first through hole 32a can be purged through the purge air pipe, so that the sublimated components and impurity particles moving upward in the furnace chamber 10a will not gather and deposit in the first through hole 32a and the direction of the temperature measuring hole 10b, thereby protecting the first through hole 32a, the temperature measuring hole 10b and the window 41 from contamination and blockage by the sublimated components and impurity particles, and improving the patency of the first through hole 32a and the temperature measuring hole 10b and the cleanliness of the window 41. In this way, the temperature measurement accuracy, continuity and stability of the infrared thermometer 40 for the preset temperature measurement area in the furnace chamber 10a can be improved, and a reliable temperature control basis can be provided for the preparation of high-quality crystals.

[0060] It should be pointed out that the crystal growth device 1000 of the present application can be applied to the growth of silicon carbide crystals but is not limited thereto. When the crystal growth device 1000 of the present application is applied to the growth of silicon carbide crystals, silicon carbide powder can be used as the crystal growth raw material 2000, and a seed crystal 3000 is arranged on the side of the upper cover 22 facing the cylinder 21 to achieve the growth of silicon carbide crystals. In addition to silicon carbide crystals, the crystal growth device 1000 of the present application can also be applied to the growth of other types of crystals, such as gallium nitride or aluminum oxide, to improve the versatility of the crystal growth device 1000 and the reliability of temperature monitoring of the growth of other types of crystals.

[0061] In addition, in some specific embodiments of the present application, an induction coil 100 is disposed on the periphery of the furnace body 10, and the induction coil 100 is connected to a power source. A graphite tray 110 is disposed on the bottom wall of the furnace chamber 10a, and the graphite tray 110 is located between the crucible 20 and the insulation layer and the furnace body 10. When the induction coil 100 is energized, an alternating magnetic field can be generated, so that eddy currents are induced inside the graphite tray 110 and the graphite crucible 20. Under the "skin effect" (when an alternating current passes through a conductor, the current tends to flow concentrated on the surface of the conductor), the eddy currents are concentrated on the surface of the graphite material, so that the graphite tray 110 and the crucible 20 are rapidly heated up, and the heat of the graphite tray 110 and the crucible 20 can be transferred to the crystal growth raw material area in the crucible 20 by radiation and conduction, thereby achieving a high temperature environment to promote crystal growth.

[0062] In some other specific embodiments of the present application, the furnace body 10 is constructed as a quartz tube, and cooling circulating water passes through the quartz tube to provide a vacuum environment and ensure good thermal isolation between the core of the crystal growth thermal field and the surrounding environment to ensure good control of the crystal growth environment.

[0063] like Figure 1 and Figure 2 As shown, according to some embodiments of the present application, a flange 11 is provided at the top of the furnace body 10, the first air pipe 51 includes a first pipe segment 51a and a second pipe segment 51b connected to each other, and the second air pipe 52 includes a third pipe segment 52a and a fourth pipe segment 52b connected to each other, wherein the first pipe segment 51a and the third pipe segment 52a are arranged at intervals on the flange 11 and pass through the flange 11, a first inlet 50a is formed at one end of the first pipe segment 51a, a second inlet 50c is formed at one end of the third pipe segment 52a, the second pipe segment 51b and the fourth pipe segment 52b both extend in a horizontal direction, and a first outlet 50b is formed at one end of the second pipe segment 51b away from the first pipe segment 51a, and a second outlet 50d is formed at one end of the fourth pipe segment 52b away from the third pipe segment 52a.

[0064] Specifically, a flange 11 is provided at the top of the furnace body 10, and the flange 11 can be used to fix and connect the purge air pipe, while ensuring the sealing and stability of the purge air pipe and the furnace body 10. The flange 11 can facilitate the installation and maintenance of the purge air pipe, and also facilitate the integration of the furnace body 10 with other components (such as the infrared thermometer 40, etc.); the first air pipe 51 and the second air pipe 52 of the purge air pipe can each include two connected pipe sections, that is, the first air pipe 51 includes a first pipe section 51a and a second pipe section 51b, and the second air pipe 52 includes a third pipe section 52a and a fourth pipe section 52b. Among them, the first pipe section 51a and the third pipe section 52a are arranged on the flange 11 at intervals to achieve the connection and fixation between the first air pipe 51, the second air pipe 52 and the furnace body 10. A first inlet 50a is formed at one end of the first pipe section 51a, and a second inlet 50c is formed at one end of the third pipe section 52a. The first pipe section 51a and the third pipe section 52a penetrate the flange 11 and extend into the furnace chamber 10a to facilitate the introduction of gas. A first outlet 50b is formed at one end of the second pipe section 51b away from the first pipe section 51a, and a second outlet 50d is formed at one end of the fourth pipe section 52b away from the third pipe section 52a to achieve the output of gas. The second pipe section 51b and the fourth pipe section 52b are both extended in the horizontal direction, so that the gas purged from the first gas pipe 51 and the second gas pipe 52 forms a horizontal airflow in the furnace chamber 10a. The horizontal airflow can effectively cover the temperature measuring hole 10b and the area around the first through hole 32a, so that it is conducive to further enhancing the blocking effect on sublimation components and impurity particles, etc., and helping to further improve the accuracy of temperature measurement.

[0065] In addition, in some specific embodiments of the present application, the crystal growth equipment 1000 further includes a process gas pipe 120, which is connected to an external gas source and is disposed in the furnace body 10. The process gas pipe 120 can be used to introduce an inert gas (such as argon, nitrogen, etc.) to provide process gas for purging the gas pipe and the furnace body 10, etc.

[0066] like Figure 1 and Figure 2 As shown, according to some embodiments of the present application, in the height direction of the furnace body 10, the length of the first air pipe 51 extending into the furnace cavity 10a is 5 cm, and the distance between the second air pipe 52 and the upper cover insulation layer 32 is 1 cm.

[0067] Specifically, in the height direction of the furnace body 10, when the length of the first air pipe 51 extending into the furnace cavity 10a is too long, for example, the length of the first air pipe 51 extending into the furnace cavity 10a is 10 cm or 20 cm, etc., the excessively deep insertion of the first air pipe 51 will affect the gas flow field in the furnace cavity 10a, thereby affecting the crystal growth; when the length of the first air pipe 51 extending into the furnace cavity 10a is too short, for example, the length of the first air pipe 51 extending into the furnace cavity 10a is 3 cm or 2 cm, etc., the first outlet 50b of the first air pipe 51 is too close to the temperature measuring hole 10b, which may easily result in the range of the purge airflow failing to completely cover the temperature measuring hole 10b. The surrounding area on the other side of the temperature hole 10b, so that some sublimated components and impurity particles can still gather near the temperature measuring hole 10b, causing the temperature measuring hole 10b to be blocked and the window 41 to be contaminated; in the embodiment of the present application, the length of the first air pipe 51 extending into the furnace chamber 10a is set to 5cm, so that the length of the first air pipe 51 extending into the furnace chamber 10a is appropriate, so that it can be ensured that the purge airflow flowing out of the first air pipe 51 can effectively cover the surrounding area on the other side of the temperature measuring hole 10b, so as to achieve a good blocking effect, and at the same time the purge airflow will not cause excessive interference to the gas flow field in the furnace chamber 10a.

[0068] In the height direction of the furnace body 10, when the distance between the second air pipe 52 and the upper cover insulation layer 32 is too short, for example, the distance between the second air pipe 52 and the upper cover insulation layer 32 is 0.5 cm or 0.2 cm, etc., the second outlet 50d of the second air pipe 52 is too close to the upper cover insulation layer 32, and the purge airflow is easy to directly impact the surface of the upper cover insulation layer 32 or its internal structure, thereby reducing the reliability of the insulation layer and affecting the local temperature field, which in turn affects the stability of the axial temperature gradient during the crystal growth process, resulting in reduced crystal preparation quality; when the distance between the second air pipe 52 and the upper cover insulation layer 32 is too long, for example, the distance between the second air pipe 52 and the upper cover insulation layer 32 is 2 cm or 3 cm, etc., the second air pipe 5 2 is too far away from the first through hole 32a of the upper cover insulation layer 32, and the sublimation components and impurity particles whose diffusion degree increases after passing through the first through hole 32a cannot be timely and effectively blocked, so that the sublimation components and impurity particles are still easily deposited near the first through hole 32a, affecting the temperature measurement accuracy; in the embodiment of the present application, by setting the distance between the second air pipe 52 and the upper cover insulation layer 32 to 1 cm, the distance between the second air pipe 52 and the upper cover insulation layer 32 is reasonable, which can effectively block the sublimation components and impurity particles from gathering in the first through hole 32a, improve the temperature measurement accuracy and stability, and at the same time protect the structural integrity of the insulation layer to ensure a good temperature field in the furnace chamber 10a.

[0069] In addition, in some embodiments, the temperature of the side of the upper cover insulation layer 32 facing away from the crucible 20 is lower than 400° C., and the material of the purge gas pipe is stainless steel or graphite.

[0070] like Figure 2 and Figure 3 As shown, according to some embodiments of the present application, a graphite ring 60 is provided on the upper cover insulation layer 32, and at least a portion of the graphite ring 60 extends into the first through hole 32a and fits against the inner wall of the first through hole 32a.

[0071] Specifically, the graphite ring 60 has strong structural stability in a high temperature environment and is not easily deformed or damaged. The graphite ring 60 can be arranged on the upper cover insulation layer 32, and at least a portion of the graphite ring 60 extends into the first through hole 32a and fits against the inner wall of the first through hole 32a, so that the graphite ring 60 forms a physical barrier at the edge of the first through hole 32a, which can isolate the sublimated components and impurity particles from direct contact with the edge of the first through hole 32a of the upper cover insulation layer 32.

[0072] In the related art, the edge of the through hole of the insulation felt is prone to corrosion and crystallization due to the scouring and erosion of sublimated components and impurity particles. The resulting sediments adhere to the edge of the through hole of the insulation felt and will float under the scouring of the airflow, which significantly interferes with the stability of the light transmission of the through hole and reduces the stability and accuracy of temperature measurement. In the embodiment of the present application, by setting a graphite ring 60, it is possible to protect the edge of the first through hole 32a from erosion and damage by sublimated components and impurity particles, etc. At the same time, the introduction of the graphite ring 60 can also enhance the structural strength of the edge of the first through hole 32a, and can avoid the collapse or deformation of the edge of the first through hole 32a due to temperature gradient changes or gas scouring, etc., thereby preventing the first through hole 32a from being blocked or blocked, which can effectively improve the stability of temperature measurement, and is conducive to extending the service life of the upper cover insulation layer 32, saving maintenance costs.

[0073] like Figure 1-Figure 3 As shown, according to some embodiments of the present application, the insulation layer also includes: an intermediate insulation layer 33, the intermediate insulation layer 33 is arranged between the upper cover insulation layer 32 and the upper cover 22, and is connected to the cylinder insulation layer 31, a second through hole 33a is formed on the intermediate insulation layer 33, the second through hole 33a is opposite to the first through hole 32a and the temperature measuring hole 10b, wherein a graphite ring 60 is arranged on the intermediate insulation layer 33, and at least a portion of the graphite ring 60 extends into the second through hole 33a and fits against the inner wall of the second through hole 33a.

[0074] Specifically, the middle insulation layer 33 is arranged between the upper cover insulation layer 32 and the upper cover 22, and the middle insulation layer 33 cooperates with the upper cover insulation layer 32 to achieve multiple insulation effects, and can further isolate heat to maintain the stability of the temperature field. A second through hole 33a is formed on the middle insulation layer 33, and the second through hole 33a is opposite to the first through hole 32a of the upper cover insulation layer 32 and the temperature measuring hole 10b at the top of the furnace body 10, so as to jointly provide a temperature measuring channel, and ensure that infrared radiation can smoothly pass through the second through hole 33a and the first through hole 32a to reach the temperature measuring hole 10b, so as to achieve accurate measurement of the temperature of the preset temperature measuring area in the furnace cavity 10a.

[0075] It should be noted that a graphite ring 60 is provided on the intermediate thermal insulation layer 33, and at least a portion of the graphite ring 60 extends into the second through hole 33a and fits against the inner wall of the second through hole 33a. Similarly, the graphite ring 60 can form a physical barrier at the edge of the second through hole 33a to isolate the sublimation components and impurity particles from direct contact with the edge of the second through hole 33a, thereby protecting the edge of the second through hole 33a from erosion and damage by the sublimation components and impurity particles, and at the same time, avoiding collapse or deformation of the edge of the second through hole 33a due to temperature gradient changes or gas scouring, thereby preventing the second through hole 33a from being blocked or blocked, thereby effectively improving the temperature measurement stability and extending the service life of the intermediate thermal insulation layer 33.

[0076] like Figure 1-Figure 3 As shown, according to some embodiments of the present application, the upper cover insulation layer 32 and the middle insulation layer 33 are both constructed as flexible parts, and the graphite ring 60 is suitable for being fixed to the flexible parts by snap connection.

[0077] Specifically, the upper cover insulation layer 32 and the middle insulation layer 33 are both constructed as flexible parts so as to fit the outside of the crucible 20 to improve the sealing performance and insulation performance. Exemplarily, the upper cover insulation layer 32 and the middle insulation layer 33 can both be graphite felt. The graphite ring 60 can be fixed to the flexible insulation layer by snapping so as to fit tightly with the inner wall of the first through hole 32a and the second through hole 33a of the flexible insulation layer. The way in which the graphite ring 60 is fixed to the flexible part by snapping, on the one hand, does not require additional fixing tools (such as bolts or adhesives) between the graphite ring 60 and the flexible part, which can simplify the installation and disassembly process and improve the convenience of assembly and maintenance; on the other hand, it can also enhance the tightness of the fit between the graphite ring 60 and the inner wall of the first through hole 32a and the second through hole 33a, and further enhance the protective effect of the graphite ring 60 on the edges of the first through hole 32a and the second through hole 33a.

[0078] In addition, if Figure 3As shown, in some specific embodiments of the present application, the graphite ring 60 includes a first ring segment 61 and a second ring segment 62 that are connected, the axis of the first ring segment 61 is orthogonal to the axis of the second ring segment 62, the first ring segment 61 is suitable for fitting with the side of the upper cover insulation layer 32 or the middle insulation layer 33 away from the crucible 20, and the second ring segment 62 is arranged in the first through hole 32a of the upper cover insulation layer 32 or in the second through hole 33a of the middle insulation layer 33.

[0079] like Figure 4 As shown, according to some embodiments of the present application, the crystal growth equipment 1000 also includes: a water-cooled plate 70, the water-cooled plate 70 is connected to the top of the furnace body 10, and is covered on the other side of the temperature measuring hole 10b, the middle of the water-cooled plate 70 has a third through hole 70a opposite to the temperature measuring hole 10b, the water-cooled plate 70 has a cooling flow channel, and the cooling flow channel is suitable for supplying coolant to flow, so as to cool the sublimated components and impurity particles deposited on the outer wall of the water-cooled plate 70.

[0080] Specifically, the water cooling plate 70 is covered on the other side of the temperature measuring hole 10b, so that the water cooling plate 70 covers the area around the other side of the temperature measuring hole 10b. The water cooling plate 70 is provided with a third through hole 70a, which is opposite to the temperature measuring hole 10b, so as to ensure that the infrared thermometer 40 can monitor the temperature in the furnace cavity 10a through the temperature measuring hole 10b and the third through hole 70a. A cooling channel is formed in the water cooling plate 70, and the cooling channel can be connected to an external water cooling system. By circulating the coolant in the cooling channel, the water cooling plate 70 can be kept at a low temperature (such as 21°C to 25°C). During the crystal growth process, some sublimated components and impurity particles will move upward along the axial temperature gradient. Since the temperature of the water-cooled plate 70 is relatively low, the sublimated components and impurity particles can be quickly cooled and deposited on the outer wall of the water-cooled plate 70. Therefore, the water-cooled plate 70 can block the sublimated components and impurity particles around the other side of the temperature measuring hole 10b to prevent these sublimated components and impurity particles from continuing to move upward to the window 41 and interfering with the temperature measurement.

[0081] In addition, in some specific embodiments of the present application, the diameter of the third through hole 70a is the same as the diameter of the temperature measuring hole 10b, so that a clear and unobstructed optical path is formed from the temperature measuring hole 10b to the third through hole 70a, thereby improving the temperature measurement accuracy of the infrared thermometer 40.

[0082] like Figure 4 As shown, according to some embodiments of the present application, the water cooling plate 70 includes a connecting portion 71, a horizontal portion 72 and an extending portion 73 which are arranged in sequence, the connecting portion 71 is connected to the furnace body 10, the extending portion 73 is arranged at the outer periphery of the horizontal portion 72 and extends away from the connecting portion 71, a third through hole 70a is provided on the horizontal portion 72, and the distance between the lower surface of the horizontal portion 72 and the upper surface of the upper cover insulation layer 32 is 30 cm to 40 cm.

[0083] Specifically, the water cooling plate 70 may be composed of three parts, namely, a connecting portion 71, a horizontal portion 72 and an extending portion 73. The connecting portion 71 may extend in the height direction of the furnace body 10, one end of the connecting portion 71 in the extending direction is connected to the horizontal portion 72, and the other end is connected to the furnace body 10, so as to play a good fixing and supporting role; the horizontal portion 72 may extend in the horizontal direction, and a third through hole 70a is provided thereon, and the extending portion 73 is provided at the periphery of the horizontal portion 72 and extends in a direction away from the connecting portion 71, so as to expand the coverage of the water cooling plate 70 and enhance the interception capability of sublimated components and impurity particles.

[0084] It should be pointed out that in the embodiment of the present application, the distance between the lower surface of the horizontal portion 72 and the upper surface of the upper cover insulation layer 32 is set within the range of 30cm to 40cm. When the distance between the lower surface of the horizontal portion 72 and the upper surface of the upper cover insulation layer 32 is too small, for example, the distance between the two is 20cm or 10cm, etc., the water cooling plate 70 is too close to the upper cover insulation layer 32 as a whole, and the low temperature of the water cooling plate 70 will produce significant thermal radiation or convection effects on the crystal growth area, which can easily cause changes in the axial temperature gradient in the furnace chamber 10a, thereby affecting the quality and stability of crystal growth; when the distance between the lower surface of the horizontal portion 72 and the upper surface of the upper cover insulation layer 32 is too large, for example, the distance between the two is 60cm or 80cm, etc., it will cause The space between the water-cooled plate 70 and the upper cover insulation layer 32 is too large, which affects the overall structural compactness of the equipment. At the same time, the excessive space also increases the difficulty of controlling the gas flow field and temperature field in the furnace chamber 10a. By setting the distance between the lower surface of the horizontal portion 72 and the upper surface of the upper cover insulation layer 32 within the range of 30cm to 40cm, for example, the distance between the two is 30cm, 35cm or 40cm, etc., it can be ensured that the influence of the water-cooled plate 70 on the temperature field in the crystal growth area is within a reasonable range, and at the same time, it can be ensured that the overall structural layout of the equipment is reasonable.

[0085] like Figure 5-Figure 7 As shown, according to some embodiments of the present application, the crystal growth equipment 1000 also includes: an electrical generator 80, a purification channel 80a is formed in the electrical generator 80, the electrical generator 80 is arranged outside the furnace body 10, and the purification channel 80a is constructed as a part of the temperature measuring hole 10b, and / or the electrical generator 80 is arranged in the furnace cavity 10a, and one end of the purification channel 80a is connected to the other side of the temperature measuring hole 10b, and the other end is connected to the furnace cavity 10a.

[0086] Among them, the electrical generating device 80 includes a plurality of negative electrode generators 81 arranged at intervals around the outer periphery of the axis of the temperature measuring hole 10b, a plurality of strong electric positive electrode parts 82 arranged on the outer periphery of the plurality of negative electrode generators 81 and corresponding one-to-one with the plurality of negative electrode generators 81, and an ash collection layer 83 arranged between the plurality of negative electrode generators 81 and the plurality of strong electric positive electrode parts 82. The ash collection layer 83 defines a purification channel 80a on the side radially facing the plurality of negative electrode generators 81. The negative electrode generator 81 can be selectively connected to the negative electrode of the power supply and make the impurities in the purification channel 80a negatively charged. The strong electric positive electrode part 82 can be selectively connected to the positive electrode of the power supply and make the ash collection layer 83 positively charged to adsorb the negatively charged impurities in the purification channel 80a.

[0087] Specifically, the electric generator 80 can be arranged outside the furnace body 10, in which case the purification channel 80a in the electric generator 80 is used as a part of the temperature measuring hole 10b; the electric generator 80 can also be arranged in the furnace cavity 10a, in which case one end of the purification channel 80a is connected to the other side of the temperature measuring hole 10b, and the other end is connected to the furnace cavity 10a. The electric generator 80 includes a negative electrode generator 81, an ash collection layer 83, and a strong positive electrode part 82 arranged around the outer periphery of the axis of the temperature measuring hole 10b and radially away from the axis. The negative electrode generator 81 is constructed as a plurality of electrodes which are spaced apart around the temperature measuring hole 10b. The plurality of negative electrode generators 81 can be connected to the negative electrode of the power supply and make the impurities in the purification channel 80a negatively charged. The strong positive electrode portion 82 is constructed as a plurality of electrodes which correspond one to one with the negative electrode generator 81. Each strong positive electrode portion 82 is located at the periphery of the corresponding negative electrode generator 81. The strong positive electrode portion 82 is suitable for being connected to the positive electrode of the power supply to provide a positive electric field for the ash collection layer 83. The ash collection layer 83 is located between the negative electrode generator 81 and the strong positive electrode portion 82. The ash collection layer 83 defines a purification channel 80a on the side radially facing the negative electrode generator 81. When the negative electrode generator 81 makes the impurities in the purification channel 80a negatively charged, these negatively charged impurities can be pushed to the inner wall of the ash collection layer 83 under the action of the electric field, so that the ash collection layer 83 collects and adsorbs the negatively charged impurities, so that the purification channel 80a remains clean, and finally the impurities will not be deposited on the window 41, thereby ensuring that the window 41 is clean and improving the accuracy of temperature measurement.

[0088] It can be understood that when the electrical generating device 80 is disposed in the furnace cavity 10a, the purification area can be expanded and the accuracy of infrared temperature measurement can be further improved.

[0089] In addition, in some specific embodiments of the present application, the electrical generator 80 further includes a grounding resistor 84, which is disposed between the negative electrode generator 81 and the strong positive electrode portion 82. The grounding resistor 84 can ensure the stable flow of current during the operation of the electrical generator 80, while preventing electric shock or equipment damage caused by charge accumulation, thereby improving the working safety of the electrical generator 80.

[0090] In some other specific embodiments of the present application, the power supply systems of the electrical generating device 80 and the crystal growth equipment 1000 are independently configured, and the electrical generating device 80 can be connected by a set of high-voltage DC power supply and control system, and the voltage range of the high-voltage DC power supply is set to 1kV~5kV to ensure the effectiveness of the electrical generating device 80 and save overall energy consumption.

[0091] like Figure 8 and Fig. 9 As shown, according to some embodiments of the present application, the crystal growth device 1000 further includes: an ultrasonic vibrator 90, which is disposed at the periphery of the electrical generating device 80 and is suitable for increasing the collision rate and movement rate of impurity particles in the purification channel 80a.

[0092] Specifically, the ultrasonic vibrator 90 can be arranged on the periphery of the electrical generating device 80, and is used to work in conjunction with the electrical generating device 80. The ultrasonic vibrator 90 can generate high-frequency vibrations to increase the collision rate and movement rate of the impurity particles in the purification channel 80a of the electrical generating device 80, thereby enhancing the ionization effect and adsorption efficiency of the impurity particles. In this way, the purification efficiency and effect in the purification channel 80a can be further optimized, which is conducive to further improving the cleanliness of the temperature measuring hole 10b and the window 41, and improving the temperature measurement stability and reliability.

[0093] In some embodiments, the operating frequency range of the ultrasonic vibrator 90 is 20 kHz to 50 kHz.

[0094] Specifically, 20kHz is the lowest frequency threshold of ultrasonic waves, which can ensure that the vibration generated by the ultrasonic vibrator 90 has sufficient energy to cause significant collision and movement of the impurity particles. 50kHz as the upper limit frequency can ensure that the ultrasonic vibrator 90 will not produce unnecessary mechanical stress or interference to other components of the equipment (such as the electrical generator 80, the infrared thermometer 40, etc.) while working efficiently. Therefore, by setting the operating frequency range of the ultrasonic vibrator 90 within the above range, the collision rate and movement rate of the impurity particles can be effectively enhanced, making the impurity particles more easily ionized and negatively charged, so that they are adsorbed by the ash collection layer 83 to ensure that the temperature measuring hole 10b and the window 41 are clean. At the same time, it is also ensured that the ultrasonic vibration will not produce mechanical resonance or damage to other key components, thereby ensuring the normal long-term stable operation of the equipment.

[0095] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0096] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A crystal growth device, characterized in that: include: A furnace body (10), the furnace body (10) having a furnace cavity (10a), and a temperature measuring hole (10b) communicating with the furnace cavity (10a) is provided at the top of the furnace body (10); A crucible (20), wherein the crucible (20) is arranged in the furnace chamber (10a), and the crucible (20) comprises a cylinder (21) and an upper cover (22); A thermal insulation layer, the thermal insulation layer comprising a cylinder thermal insulation layer (31) and an upper cover thermal insulation layer (32), the upper cover thermal insulation layer (32) being located above the upper cover (22), and the upper cover thermal insulation layer (32) having a first through hole (32a) opposite to the temperature measuring hole (10b); an infrared thermometer (40), the infrared thermometer (40) being arranged at the top of the furnace body (10), the infrared thermometer (40) having a window (41), the window (41) being located at one side of the temperature measuring hole (10b); A purge air pipe, the purge air pipe comprising a first air pipe (51) and a second air pipe (52) arranged on the furnace body (10), wherein a first outlet (50b) of the first air pipe (51) is adjacent to the other side of the temperature measuring hole (10b), and a second outlet (50d) of the second air pipe (52) is adjacent to the first through hole (32a), and gas outlet directions of the first outlet (50b) and the second outlet (50d) both have an angle with the height direction of the furnace body (10), and a first inlet (50a) of the first air pipe (51) and a second inlet (50c) of the second air pipe (52) are both connected to an external gas source.

2. The crystal growth device according to claim 1, characterized in that A flange (11) is provided at the top of the furnace body (10); the first air pipe (51) comprises a first pipe section (51a) and a second pipe section (51b) connected to each other; the second air pipe (52) comprises a third pipe section (52a) and a fourth pipe section (52b) connected to each other; the first pipe section (51a) and the third pipe section (52a) are arranged at intervals on the flange (11) and penetrate the flange (11); one end of the first pipe section (51a) is formed with the first inlet (50a); one end of the third pipe section (52a) is formed with the second inlet (50c); the second pipe section (51b) and the fourth pipe section (52b) both extend in a horizontal direction; the end of the second pipe section (51b) away from the first pipe section (51a) is formed with the first outlet (50b); and the end of the fourth pipe section (52b) away from the third pipe section (52a) is formed with the second outlet (50d).

3. The crystal growth device according to claim 1, characterized in that In the height direction of the furnace body (10), the length of the first air pipe (51) extending into the furnace cavity (10a) is 5 cm, and the distance between the second air pipe (52) and the upper cover insulation layer (32) is 1 cm.

4. The crystal growth device according to claim 1, characterized in that: A graphite ring (60) is provided on the upper cover insulation layer (32), and at least a portion of the graphite ring (60) extends into the first through hole (32a) and fits against the inner wall of the first through hole (32a).

5. The crystal growth device according to claim 4, characterized in that: The thermal insulation layer further comprises: an intermediate thermal insulation layer (33), the intermediate thermal insulation layer (33) being arranged between the upper cover thermal insulation layer (32) and the upper cover (22), and being connected to the cylinder thermal insulation layer (31), a second through hole (33a) being formed on the intermediate thermal insulation layer (33), the second through hole (33a) being opposite to the first through hole (32a) and the temperature measuring hole (10b), wherein a graphite ring (60) is arranged on the intermediate thermal insulation layer (33), and at least a portion of the graphite ring (60) extends into the second through hole (33a) and fits against an inner wall of the second through hole (33a).

6. The crystal growth device according to claim 5, characterized in that The upper cover insulation layer (32) and the middle insulation layer (33) are both constructed as flexible parts, and the graphite ring (60) is suitable for being fixed to the flexible parts by snapping.

7. The crystal growth device according to any one of claims 1 to 6, characterized in that: Also includes: A water cooling plate (70), the water cooling plate (70) is connected to the top end of the furnace body (10) and is covered on the other side of the temperature measuring hole (10b), the middle part of the water cooling plate (70) has a third through hole (70a) opposite to the temperature measuring hole (10b), and the water cooling plate (70) has a cooling flow channel, which is suitable for cooling liquid to flow so as to cool the sublimated components and impurity particles deposited on the outer wall of the water cooling plate (70).

8. The crystal growth apparatus according to claim 7, characterized in that The water cooling plate (70) comprises a connecting portion (71), a horizontal portion (72) and an extending portion (73) which are arranged in sequence, the connecting portion (71) is connected to the furnace body (10), the extending portion (73) is arranged on the outer periphery of the horizontal portion (72) and extends away from the connecting portion (71), the third through hole (70a) is arranged on the horizontal portion (72), and the distance between the lower surface of the horizontal portion (72) and the upper surface of the upper cover insulation layer (32) is 30 cm to 40 cm.

9. The crystal growth apparatus according to claim 7, characterized in that: Also includes: An electric generating device (80), wherein a purification channel (80a) is formed in the electric generating device (80), the electric generating device (80) is arranged outside the furnace body (10), and the purification channel (80a) is constructed as a part of the temperature measuring hole (10b), and / or the electric generating device (80) is arranged in the furnace cavity (10a), and one end of the purification channel (80a) is connected to the other side of the temperature measuring hole (10b), and the other end is connected to the furnace cavity (10a); wherein The electrical generating device (80) comprises a plurality of negative electrode generators (81) arranged at intervals around the outer periphery of the axis of the temperature measuring hole (10b), a plurality of strong positive electrode parts (82) arranged on the outer periphery of the plurality of negative electrode generators (81) and corresponding one-to-one with the plurality of negative electrode generators (81), and an ash collection layer (83) arranged between the plurality of negative electrode generators (81) and the plurality of strong positive electrode parts (82), wherein the ash collection layer (83) defines the purification channel (80a) on the side radially facing the plurality of negative electrode generators (81), the negative electrode generator (81) can be selectively connected to the negative electrode of the power supply and make the impurities in the purification channel (80a) negatively charged, and the strong positive electrode part (82) can be selectively connected to the positive electrode of the power supply and make the ash collection layer (83) positively charged to adsorb the negatively charged impurities in the purification channel (80a).

10. The crystal growth apparatus according to claim 9, characterized in that It also includes an ultrasonic vibrator (90), which is arranged on the periphery of the electrical generating device (80) and is suitable for increasing the collision rate and movement speed of foreign particles in the purification channel (80a).

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