Rotary sample support, sample self-rotation method, epitaxial growth equipment and epitaxial growth method

Abstract

The invention discloses a rotary sample support, a sample self-rotation method, epitaxial growth equipment and an epitaxial growth method. The rotary sample support comprises a sample tray and a gas compression device, the sample tray is used for bearing samples, the sample tray is arranged on the gas compression device and is in running fit with the gas compression device, m turbulent flow structures are arranged on the sample tray, and the gas compression device is provided with n gas outlets, the gas compression device is used for increasing the pressure intensity of the gas flow provided by the gas supply device from the first pressure intensity to the second pressure intensity, and the compressed gas flow is jetted to the turbulent flow structure through the gas outlet and generates a driving force for driving the sample tray to move; the driving force can drive the sample tray to rotate around the axis of the sample tray and generate a separation tendency with the gas compression device along the axis of the sample tray. The rotating speed of the rotating sample support is controllable, pushing force needed at different moments can be regulated and controlled according to growth of samples, and the growth uniformity of the samples is improved while the stable rotating speed is guaranteed.

Description

Technical Field

[0001] The present invention particularly relates to a rotating sample holder, a sample self-rotation method, an epitaxial growth device and a method, and belongs to the technical field of semiconductor epitaxial equipment. Background Art

[0002] GaN is an important wide bandgap semiconductor material, widely used in the preparation of high-brightness light-emitting diodes (LEDs), semiconductor lasers and high-power electronic devices. The hydride vapor phase epitaxy (HVPE) method can be used to prepare single-crystal GaN thick film substrates by growing GaN at a high speed. However, it is very difficult to prepare high-quality gallium nitride single crystal substrates due to the difficulty in controlling process conditions. Due to parasitic deposition, the design space of the HVPE reactor showerhead is limited. The III-group source and the V-group source can easily produce a large amount of parasitic deposition due to premixing, which is a great limitation on the service life of the reactor. Isolating the III-group source from the V-group source can easily lead to problems such as poor growth uniformity and poor crystal growth quality. To solve this problem, it is necessary to consider that the sample holder can rotate by itself, because the preparation of single-crystal GaN is carried out at high temperature (for example: 1050℃), and traditional rotation methods such as bearings will no longer be applicable. Summary of the invention

[0003] The main purpose of the present invention is to provide a rotating sample holder, a method for sample self-rotation, an epitaxial growth device and method, which not only solves the problem of poor growth uniformity caused by the isolation of group III and group V gases, but also greatly simplifies the structure of the reaction chamber, reduces costs while ensuring the growth quality of GaN single crystals, thereby overcoming the shortcomings of the prior art.

[0004] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes: A first aspect of an embodiment of the present invention provides a rotating sample holder, comprising: A sample tray and a gas compression device, wherein the sample tray is used to carry samples, the sample tray is arranged on the gas compression device and rotatably cooperates with the gas compression device, the sample tray is provided with m turbulent structures, the gas compression device has n air outlets, the gas compression device is used to increase the pressure of the airflow provided by the air supply device from a first pressure to a second pressure, and the compressed airflow is sprayed to the turbulent structure through the air outlet to drive the sample tray to rotate around its own axis and to have a separation tendency from the gas compression device along its own axis, m≥n≥1, one of m and n is an odd number, and the other is an even number.

[0005] A second aspect of an embodiment of the present invention provides an epitaxial growth device, comprising: a growth chamber, a gas supply device and a rotating sample holder, wherein the rotating sample holder is arranged in the growth chamber, the gas supply device is connected to the gas inlet of the gas compression device of the rotating sample holder, and is at least used to provide a gas flow with a first pressure to the gas compression device to drive the sample tray of the rotating sample holder to rotate.

[0006] A third aspect of an embodiment of the present invention provides a method for controlling sample self-rotation, comprising: Providing the rotating sample holder, and placing the sample on the carrying table of the rotating sample holder; A gas supply device provides a gas flow with a first pressure, and the gas flow is input into the gas compression device. The gas flow is pressurized to a second pressure by the gas compression device, and is sprayed onto the flow disturbance structure of the sample tray through the gas outlet, thereby driving the sample tray to rotate.

[0007] A fourth aspect of an embodiment of the present invention provides an epitaxial growth method, which includes: Providing the epitaxial growth equipment; The sample is epitaxially grown on the supporting table of the rotating sample holder, and during the growth of the sample, the pressure of the air flow provided by the gas supply device is increased as the mass of the sample increases, so that the rotation speed of the sample along with the sample tray is constant at the selected growth stage.

[0008] Compared with the prior art, the advantages of the present invention include: 1) The rotating sample holder provided by the present invention can realize self-rotation during the process of growing samples at high temperature (for example: 1200K), ensuring uniform concentration field above the samples, thereby realizing the growth of high-quality samples; it solves the problem of poor growth uniformity caused by the isolation of group III sources and group V sources, and can simplify the structure of the rotating sample holder, which helps to reduce costs.

[0009] 2) The rotation speed of the rotating sample holder provided by the present invention is controllable, and the driving force F1 required at different times can be adjusted according to the growth rate V and growth thickness H (reflected in the growth quality) of the sample. While ensuring a stable rotation speed, the uniformity of sample growth is improved, so that the sample maintains good stability and high quality during long-term growth.

[0010] 3) The rotating sample holder provided by the present invention can realize sample growth at different tilt angles (0-90°), is suitable for horizontal, vertical or tilted epitaxial growth equipment, and has a wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1is a schematic structural diagram of an epitaxial growth device provided in Example 1 of the present invention; Figure 2 It is a schematic diagram of a partial explosion structure of an epitaxial growth device provided in Example 1 of the present invention; Figure 3 is a schematic structural diagram of a rotating sample holder provided in Example 1 of the present invention; Figure 4 is a schematic structural diagram of a gas compression disk provided in Example 1 of the present invention; Figure 5 It is the force analysis of the airflow ejected by the gas compression disk at the point of application of the sample tray; Figure 6 and Figure 7 is a schematic structural diagram of a sample tray provided in Example 1 of the present invention; Figure 8 is a schematic structural diagram of a sample tray provided in Example 2 of the present invention; Fig. 9 is the curve of the growth rate of GaN sample changing with time; Fig.10 The inhomogeneity test result of the gallium nitride sample obtained by growing the sample tray in a manner driven by the airflow provided by the present invention; Fig.11 The results of the inhomogeneity test of the gallium nitride sample obtained by growing the sample tray in the manner of rotating the sample tray driven by a motor in the prior art. DETAILED DESCRIPTION

[0012] In view of the deficiencies in the prior art, the inventor of this case has proposed the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0013] A first aspect of an embodiment of the present invention provides a rotating sample holder, comprising: A sample tray and a gas compression device, the sample tray is used to carry samples, the sample tray is arranged on the gas compression device and rotates with the gas compression device, m turbulence structures are arranged on the sample tray, the gas compression device has n air outlets, the gas compression device is used to increase the pressure of the airflow provided by the air supply device from a first pressure to a second pressure, and the compressed airflow is sprayed to the turbulence structure through the air outlet to drive the sample tray to rotate around its own axis and to have a separation tendency from the gas compression device along its own axis, m≥n≥1, one of m and n is an odd number, and the other is an even number.

[0014] Furthermore, the gas compression device has an outlet end face and an inlet end face arranged back to back, the inlet end face is provided with an inlet port, and n outlet ports are provided on the outlet end face. An inlet channel and n gas compression channels are provided inside the gas compression device. The inlet channel is respectively connected to each inlet port and each gas compression channel, each gas compression channel is connected to an outlet, and the sum of the inner diameters of the n gas compression channels is smaller than the inner diameter of the inlet channel.

[0015] Furthermore, the n air outlets are distributed in a circular ring area.

[0016] In a more specific embodiment, each gas compression channel includes a first channel section and a second channel section which are connected in sequence, the first channel section is directly connected to the air inlet channel, the second channel section is directly connected to the air outlet, the inner diameter of the second channel section is smaller than the inner diameter of the first channel section, and the first channel section and the second channel section are arranged at an angle.

[0017] Furthermore, an angle between the first channel section and the second channel section is greater than 90° and less than 180°.

[0018] Furthermore, the axis of the first channel section is parallel to the axis of the gas outlet end face, the axis of the second channel section is arranged at an angle to the gas outlet end face, and the angle between the axis of the second channel section and the gas outlet end face is greater than 0° and less than 90°.

[0019] Furthermore, the air inlet end face and the air outlet end face are arranged at an angle, and the air outlet end face is parallel to the supporting table surface of the sample tray.

[0020] Furthermore, the angle between the air inlet end face and the air outlet end face is greater than 0° and less than 90°.

[0021] Furthermore, the axis of the air inlet end face coincides with the axis of the gas compression device, and the axis of the air outlet end face is arranged at an angle to the axis of the air inlet end face.

[0022] In a more specific embodiment, the gas compression device includes an air intake disk and a gas compression disk, the air intake disk and the gas compression disk are fixed and sealed together, the end face of the air intake disk facing away from the gas compression disk serves as an air intake end face, the end face of the gas compression disk facing away from the air intake disk serves as an air outlet end face, the air intake channel is arranged in the air intake disk, and n gas compression channels are arranged in the gas compression disk.

[0023] Furthermore, the sample tray has a first working surface and a second working surface arranged back to back, the second working surface faces the gas outlet end surface of the gas compression device, the first working surface is a carrying table for carrying samples, and m spoiler structures are arranged on the second working surface.

[0024] Furthermore, the m spoiler structures are distributed in an annular region, and the orthographic projection of the annular region where the n air outlets are located is completely located in the middle region of the orthographic projection of the annular region where the m spoiler structures are located.

[0025] Furthermore, the spoiler structure is a groove structure or a protrusion structure.

[0026] Furthermore, m flow guide ports are arranged on the circumferential side surface of the sample tray, and each groove-shaped structure is connected to a flow guide port.

[0027] Furthermore, the contour of the groove opening of the groove-shaped structure on the second working surface includes a first arc segment, a second arc segment and a third arc segment which are smoothly connected in sequence, and the guide port is located between the first arc segment and an end of the third arc segment away from the second arc segment.

[0028] Furthermore, the second arc segment is a semicircular arc segment.

[0029] Furthermore, the distance between the first arc segment and the third arc segment gradually decreases in a direction away from the second arc segment.

[0030] Furthermore, the second circle to which the second arc segment belongs is inscribed in the first circle to which the first arc segment belongs, and is circumscribed in the third circle to which the third arc segment belongs, and the first circle and the third circle intersect.

[0031] Furthermore, the first arc segment, the second arc segment, and the third arc segment satisfy: x 2 +y 2 =R2 2 , (x-11) 2 +(y+33.24) 2 =R3 2 , (x-14) 2 +(y+18.24) 2 =R1 2 , Wherein, (x, y) is the coordinate of any point on the second arc segment in the one-dimensional coordinate system, R1 is the curvature radius of the first arc segment, R2 is the curvature radius of the second arc segment, and R3 is the curvature radius of the third arc segment.

[0032] Furthermore, the groove wall of the groove-like structure includes a first groove wall, a second groove wall and a third groove wall that are smoothly connected, the first arc segment, the second arc segment and the third arc segment correspond to the first groove wall, the second groove wall and the third groove wall respectively, and a guide port is formed between the first groove wall and the third groove wall at one end away from the second groove wall, and the first groove wall and the second groove wall intersect at the groove bottom in the area close to the guide port.

[0033] Furthermore, the first groove wall, the second groove wall and the third groove wall are all smooth curved surfaces.

[0034] Furthermore, the material of the sample may be gallium nitride or aluminum nitride.

[0035] A second aspect of an embodiment of the present invention provides an epitaxial growth device, which includes: a growth chamber, a gas supply device and a rotating sample holder, the rotating sample holder is arranged in the growth chamber, the gas supply device is connected to the gas inlet of the gas compression device of the rotating sample holder, and is at least used to provide a gas flow with a first pressure to the gas compression device to drive the sample tray of the rotating sample holder to rotate.

[0036] In a more specific implementation, the epitaxial growth device further includes: a base and a connecting rod, the rotating sample holder is disposed on the base, the connecting rod cooperates with the base, and one end of the connecting rod is disposed outside the growth chamber.

[0037] Furthermore, in the growth chamber, the carrying table of the sample tray for carrying the sample is inclined.

[0038] A third aspect of an embodiment of the present invention provides a method for controlling sample self-rotation, comprising: Providing a rotating sample holder, and placing the sample on a bearing table of the rotating sample holder; The gas supply device provides a gas flow with a first pressure, and the gas flow is input into the gas compression device. The gas compression device pressurizes the gas flow from the first pressure to the second pressure, and sprays the gas flow through the gas outlet onto the spoiler structure of the sample tray, driving the sample tray to rotate.

[0039] A fourth aspect of an embodiment of the present invention provides an epitaxial growth method, which includes: Providing epitaxial growth equipment; The sample is epitaxially grown on the supporting table of the rotating sample holder, and during the growth of the sample, the pressure of the gas flow provided by the gas supply device is increased as the mass of the sample increases, so that the rotation speed of the sample along with the sample tray at the selected growth stage is constant.

[0040] Furthermore, the rotation speed of the sample tray corresponds to the growth stage of the sample one by one, and the above-mentioned epitaxial growth method also includes: adjusting the pressure of the air flow provided by the air supply device to make the sample tray maintain a corresponding rotation speed in different growth stages of the sample.

[0041] The technical solution, its implementation process and principles, etc. will be further explained below in conjunction with the accompanying drawings and specific implementation cases. Unless otherwise specified, the gas supply device, epitaxial growth chamber, growth source supply device, etc. in the embodiments of the present invention are all known in the art and can be purchased commercially.

[0042] Example 1 See also Figure 1 and Figure 2The epitaxial growth device includes a growth chamber 100, a rotating sample holder 200, a base 300, a connecting rod 400 and a gas supply device.

[0043] The growth chamber 100 mainly provides a growth environment required for epitaxial growth of semiconductor samples. The rotating sample holder 200 is arranged on the base 300, and the rotating sample holder 200 is mainly used to carry samples. The gas supply device is connected to the rotating sample holder 200 via the gas pipeline 500, and is mainly used to input airflow into the rotating sample holder 200 to drive the sample tray 210 directly carrying the sample in the rotating sample holder 200 to rotate. The base 300 cooperates with the connecting rod 400, and the rotating sample holder 200 can be placed in the growth chamber 100 via the connecting rod 400 and the base 300, or taken out from the growth chamber 100.

[0044] In this embodiment, please refer to Figure 2 , Figure 3 and Figure 4 The rotating sample holder 200 includes a sample tray 210, a gas compression disk 220 and a gas inlet disk 230 which are sequentially arranged along the axis AA direction thereof.

[0045] The gas compression disk 220 and the air intake disk 230 are fixedly and sealed together to form a gas compression device. The air intake disk 230 is a cylindrical structure, and its interior as a whole serves as an air intake channel. The end of the air intake disk 230 facing away from the gas compression disk 220 is a closed end, and the end face of the closed end serves as an air intake end face. An air inlet 201 is arranged on the air intake end face, and the air inlet 201 is connected to the air intake channel. The air inlet 201 is connected to the air supply device through a gas transmission pipeline 500. The gas compression device can pressurize the airflow with a first pressure provided by the air supply device to a second pressure; the other end of the air intake disk 230 facing the gas compression disk 220 is an open end. The gas compression disk 220 is a columnar structure, and has n gas compression channels inside. One end of the gas compression disk 220 facing the open end of the air inlet disk 230 is sealed and combined with the open end of the air inlet disk 230. The n gas compression channels are directly connected to the air inlet channels inside the air inlet disk 230 respectively. The end face of the gas compression disk 220 facing away from the air inlet disk 230 serves as a gas outlet end face, and n gas outlet ports 202 are arranged on the gas outlet end face. Each gas outlet port 202 is connected to a gas compression channel. The inner diameter of each gas compression channel is smaller than the inner diameter of the air inlet channel. Preferably, the sum of the inner diameters of the n gas compression channels is smaller than the inner diameter of the air inlet channel.

[0046] The sample tray 210 is rotatably matched with the gas compression disk 220. The sample tray 210 has a first working surface and a second working surface which are arranged back to back. The first working surface is a carrying table for carrying samples, and the second working surface faces the gas outlet end surface of the gas compression disk 220. The second working surface is provided with m spoiler structures. The airflow pressurized to the second pressure by the gas compression device is respectively sprayed to the spoiler structure through n gas outlets 202, and generates a driving force for driving the sample tray 210 to move. The driving force can drive the sample tray 210 to rotate around its own axis and to have a separation tendency from the gas compression device along its own axis. m≥n≥1, one of m and n is an odd number, and the other is an even number; for example, m=11, n=2.

[0047] It should be noted that the gas compression disk 220 and the air intake disk 230 in this embodiment can be fixed and sealed in a manner known in the art. Of course, the gas compression disk 220 and the air intake disk 230 can also be an integrated structure. For example, the gas compression disk 220 and the air intake disk 230 can be fixed by providing mutually matching connecting columns and connecting holes on the gas compression disk 220 and the air intake disk 230, wherein the connecting columns are embedded in the connecting holes to achieve the fixation of the two. It can be understood that in order to achieve the sealing of the gas compression disk 220 and the air intake disk 230 at the contact part, the contact surface of the gas compression disk 220 and the air intake disk 230 should be smooth and flat, and the gas compression disk 220 and the air intake disk 230 can be sealed with the assistance of sealant or sealing rings. The sample tray 210 is rotatably matched with the gas compression disk 220 via a rotating shaft / column. The rotating shaft / column, the sample tray 210, and the gas compression disk 220 may be coaxially arranged. The rotating shaft / column is fixedly arranged on one of the sample tray 210 and the gas compression disk 220, and a hole matching the rotating shaft / column is arranged on the other. The rotating shaft / column and the hole cooperate to form a motion guide structure for the sample tray 210 to move. In this embodiment, n air outlets 202 are distributed in a circular area, and m spoiler structures are distributed in a circular area. The orthographic projection of the circular area where the n air outlets 202 are located is completely located in the middle area of ​​the orthographic projection of the circular area where the m spoiler structures are located, so that the airflow ejected from the air outlets 202 can directly act on the middle area of ​​the spoiler structure, and the middle area is the area between the two ends of the spoiler structure.

[0048] In this embodiment, the gas inlet disk 230 is a cylindrical structure, the axial thickness of the gas compression disk 220 is uneven, the gas compression disk 220 can be regarded as a partially cylindrical structure with one end cut off along an inclined plane inclined to its own radial cross section, the axis of the gas compression disk 220 and the axis of the gas inlet disk 230 are set at an angle, and the angle between the axis of the gas compression disk 220 and the axis of the gas inlet disk 230 is greater than 0° and less than 90°. Specifically, the inlet end face of the gas inlet disk 230 and the outlet end face of the gas compression disk 220 are set at an angle, the outlet end face of the gas compression disk 220 is parallel to the supporting table of the sample tray 210, relative to the axis of the gas inlet disk 230, the outlet end face of the gas compression disk 220 and the supporting table of the sample tray 210 are both inclined, specifically, the angle between the inlet end face and the outlet end face is greater than 0° and less than 90°. Through such a design, sample growth at different tilt angles can be achieved, and it is suitable for a horizontal, vertical or tilted growth chamber 100 .

[0049] In this example, please refer again to Figure 4 Each gas compression channel includes a first channel section 221 and a second channel section 222 which are connected in sequence. The first channel section 221 is directly connected to the air inlet channel, and the second channel section 222 is directly connected to the air outlet 202 (the air outlet 202 is formed by the intersection and connection between the second channel section 222 and the air outlet end face). The inner diameter of the second channel section 222 is smaller than the inner diameter of the first channel section 221, and the first channel section 221 and the second channel section 222 are set at an angle. Specifically, the axis of the first channel section 221 is parallel to the axis of the air outlet end face, and the axis of the second channel section 222 is set at an angle to the air outlet end face. The angle between the axis of the second channel section 222 and the air outlet end face is greater than 0° and less than 90°.

[0050] Through such a design, not only can the gas compression channel form an airflow boosting channel, but the second channel section 222 is inclined relative to the gas outlet end surface, and the airflow derived from the inclined second channel section 222 is sprayed onto the spoiler structure. The driving force (i.e., thrust) at the contact point is decomposed into two parts, namely, a force F1 that pushes the sample tray 210 upward along the axial direction of the sample tray, and the other part is a force F2 that pushes the sample tray 210 to rotate along the tangential direction of the circumference of the sample tray, such as Figure 5 shown.

[0051] The friction coefficient between the sample tray 210 and the gas compression disk 220 can be checked according to the material parameters. From the analysis of the verification situation, the friction coefficient µ is less than 1. When the inclination angle of the second channel section 222 (i.e., the angle between the axis of the second channel section 222 and the outlet end surface) is θ, F1= M*g*Sinθ*µ1, F2=M*g*Cosθµ2, where tanθ=F1 / F2, M is the mass of the sample on the sample tray 210, g is the acceleration of gravity, µ1 is the friction coefficient between the sample tray 210 and the rotating shaft / column, and µ2 is the friction coefficient between the sample tray 210 and the gas compression disk 220. The aperture of the outlet 202 is S m , the number of outlets 202 is n, the pressure of the compressed air flow is a constant pressure P, and the relationship between F1 and the aperture of the outlet 202 satisfies: F1=P*S=ℼ*(S m / 2)²*n*P.

[0052] According to the growth rate V and growth thickness H of the sample, the driving force F1 required at different times can be adjusted by adjusting the pressure of the compressed air flow provided. While ensuring a stable rotation speed, the growth uniformity is improved, the long-term growth stability of the sample is achieved, and the quality of the sample is improved.

[0053] In this embodiment, the air supply device may be an air pump or other equipment.

[0054] In this embodiment, please refer to Figure 2 , Figure 3 , Figure 4 , Figure 6 and Figure 7 The spoiler structure is a groove-shaped structure 211. m guide ports 212 are also provided on the circumferential side of the sample tray 210. Each groove-shaped structure 211 is connected to a guide port 212. The airflow ejected from the air outlet 202 is ejected to the middle area of ​​the groove-shaped structure 211 and is discharged from the guide port 212.

[0055] In this embodiment, the contour of the groove of the groove-like structure 211 on the second working surface includes a first arc segment 2111, a second arc segment 2112 and a third arc segment 2113 that are smoothly connected in sequence, and the guide port 212 is located between the first arc segment 2111 and the third arc segment 2113 at one end away from the second arc segment 2112.

[0056] Further, the second arc segment 2112 is a semicircular arc segment, the second circumference to which the second arc segment 2112 belongs is inscribed in the first circumference to which the first arc segment 2111 belongs, and is circumscribed in the third circumference to which the third arc segment 2113 belongs, and the first circumference and the third circumference intersect, that is, the spacing between the first arc segment 2111 and the third arc segment 2113 gradually decreases in the direction away from the second arc segment 2112, and the first arc segment 2111, the second arc segment 2112, and the third arc segment 2113 satisfy: x 2 +y 2 =R2 2 , (x-11) 2 +(y+33.24) 2 =R3 2 , (x-14) 2 +(y+18.24) 2 =R1 2 , Wherein, (x, y) is the coordinate of any point on the second arc segment 2112 in the one-dimensional coordinate system, R1 is the curvature radius of the first arc segment 2111 , R2 is the curvature radius of the second arc segment 2112 , and R3 is the curvature radius of the third arc segment 2113 .

[0057] In this embodiment, the groove wall of the groove-like structure 211 includes a first groove wall, a second groove wall and a third groove wall which are smoothly connected. The first groove wall, the second groove wall and the third groove wall are all smooth curved surfaces. The first arc segment 2111, the second arc segment 2112 and the third arc segment 2113 correspond to the first groove wall, the second groove wall and the third groove wall respectively. A guide port 212 is formed between the ends of the first groove wall and the third groove wall away from the second groove wall. The first groove wall and the second groove wall intersect at the groove bottom in the area near the guide port 212. The groove-like structure 211 with a gradually tapering diameter is used as a spoiler structure, which is more conducive to the discharge of the driving airflow, thereby reducing the interference of the driving airflow on the uniformity of the concentration field of the reaction source. At the same time, the groove-like structure 211 can also reduce the weight of the sample tray, thereby improving the utilization efficiency of the driving gas.

[0058] Example 2 The structure of an epitaxial growth device in this embodiment is basically the same as that in Embodiment 1, except that: the spoiler structure in this embodiment is as follows Figure 8 The rectangular raised structure shown.

[0059] When epitaxial growth of a gallium nitride sample is performed using an epitaxial growth device provided by an embodiment of the present invention, the rotating sample holder 200 is pushed into the growth chamber 100 together with the base 300 by operating the connecting rod 400, and nitrogen is input into the gas inlet disk 230 of the rotating sample holder 200 through the gas pipeline 500 by the nitrogen gas supply device, and compressed nitrogen is formed by compression and pressurization of the gas compression disk 220. The compressed nitrogen is ejected from the gas outlet 202 after passing through the inclined gas compression channel inside the gas compression disk 220, and is ejected onto the turbulent flow structure of the sample tray 210, thereby driving the sample tray 210 to rotate. At the same time, a growth environment is formed in the growth chamber 100 and a growth source is introduced, thereby growing a gallium nitride sample on the sample tray 210.

[0060] During the growth process of the gallium nitride sample, the pressure of the gas flow provided by the gas supply device is increased as the mass of the gallium nitride sample increases, so that the speed of the gallium nitride sample along with the sample tray at the selected growth stage is constant, and the pressure of the gas flow provided by the gas supply device is adjusted to keep the gallium nitride sample at different speeds in different growth stages, so that the uniformity of the formed sample is better. The growth rate curve of the gallium nitride sample over time is shown in FIG. Fig. 9 As shown, it can be seen that the growth rate distribution on the surface of the GaN sample is different at different growth moments. The growth rate distribution on the surface of the GaN sample is monitored from 0 to 20 hours. The software program is used to set the integral of the growth rate and time, and the mass of the GaN sample growth at each moment is estimated. At the same time, this data is fed back to the program setting to determine the blowing pressure P(t) at the corresponding moment. First, it is ensured that the GaN sample can rotate at the required speed to improve the growth uniformity. At the same time, the minimum driving gas is used to ensure that the uniformity of the growth source concentration field in the reaction chamber is not affected, thereby improving the process stability.

[0061] Through comparative testing, we can obtain Fig.10 and Fig.11 The non-uniformity test results of the gallium nitride samples shown in the figure show that the non-uniformity of the rotational growth of the gallium nitride sample obtained by the epitaxial growth equipment provided by the present invention is 11%, while the non-uniformity of the gallium nitride sample obtained by the rotational growth of the gallium nitride sample using a motor-driven sample tray is 25%.

[0062] The rotating sample holder provided in the embodiment of the present invention can realize self-rotation during the process of growing compound semiconductors at high temperature (eg, 1200K), thereby ensuring a uniform concentration field above the sample and achieving high-quality sample growth.

[0063] The rotation speed of the rotating sample holder provided in the embodiment of the present invention is controllable, and the driving force F1 required at different times can be adjusted according to the growth rate V and growth thickness H (reflected in the growth quality) of the sample. While ensuring a stable rotation speed, the uniformity of sample growth is improved, so that the sample maintains good stability and high quality during a long-term growth process.

[0064] The rotating sample holder provided in the embodiment of the present invention can realize sample growth at different tilt angles (0-90°), and is suitable for horizontal, vertical or tilted epitaxial growth equipment.

[0065] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A rotating sample holder, characterized in that: include: A sample tray and a gas compression device, wherein the sample tray is used to carry samples, the sample tray is arranged on the gas compression device and rotatably cooperates with the gas compression device, the sample tray is provided with m turbulent structures, the gas compression device has n air outlets, the gas compression device is used to increase the pressure of the airflow provided by the air supply device from a first pressure to a second pressure, and the compressed airflow is sprayed to the turbulent structure through the air outlet to drive the sample tray to rotate around its own axis and to have a separation tendency from the gas compression device along its own axis, m≥n≥1, one of m and n is an odd number, and the other is an even number.

2. The rotating sample holder according to claim 1, characterized in that: The gas compression device has an outlet end face and an inlet end face which are arranged back to back, the inlet end face is provided with an inlet port, the n outlet ports are provided on the outlet end face, an inlet channel and n gas compression channels are provided inside the gas compression device, the inlet channel is respectively connected with each inlet port and each gas compression channel, each gas compression channel is connected with an outlet port, and the sum of the inner diameters of the n gas compression channels is smaller than the inner diameter of the inlet channel; Preferably, the n air outlets are distributed in a circular area.

3. The rotating sample holder according to claim 2, characterized in that: Each of the gas compression channels comprises a first channel section and a second channel section which are connected in sequence, the first channel section is directly connected to the air inlet channel, the second channel section is directly connected to the air outlet, the inner diameter of the second channel section is smaller than the inner diameter of the first channel section, and the first channel section and the second channel section are arranged at an angle; Preferably, the axis of the first channel section is parallel to the axis of the gas outlet end surface, and the axis of the second channel section is arranged at an angle to the gas outlet end surface; Preferably, the air inlet end surface is arranged at an angle to the air outlet end surface, and the air outlet end surface is parallel to the supporting table surface of the sample tray; Preferably, the angle between the air inlet end face and the air outlet end face is greater than 0° and less than 90°; Preferably, the axis of the air inlet end face coincides with the axis of the gas compression device, and the axis of the air outlet end face is arranged at an angle to the axis of the air inlet end face.

4. The rotating sample holder according to claim 3, characterized in that: The gas compression device includes an air intake disk and a gas compression disk, wherein the air intake disk is fixedly combined with the gas compression disk, the end surface of the air intake disk facing away from the gas compression disk serves as the air intake end surface, the end surface of the gas compression disk facing away from the air intake disk serves as the air outlet end surface, the air intake channel is arranged in the air intake disk, and the n gas compression channels are arranged in the gas compression disk.

5. The rotating sample holder according to claim 2, characterized in that: The sample tray has a first working surface and a second working surface which are arranged back to back, the second working surface faces the gas outlet end surface of the gas compression device, the first working surface is a carrying table surface for carrying the sample, and the m spoiler structures are arranged on the second working surface; Preferably, the m spoiler structures are distributed in a circular area.

6. The rotating sample holder according to claim 5, characterized in that: The spoiler structure is a groove structure or a convex structure; Preferably, m flow guide ports are further provided on the circumferential side surface of the sample tray, and each of the groove-shaped structures is in communication with one of the flow guide ports; Preferably, the profile of the notch of the groove-like structure on the second working surface includes a first arc segment, a second arc segment and a third arc segment which are smoothly connected in sequence, and the guide port is located between the first arc segment and an end of the third arc segment away from the second arc segment; Preferably, the second arc segment is a semicircular arc segment; Preferably, the distance between the first arc segment and the third arc segment gradually decreases in a direction away from the second arc segment; Preferably, the second circumference to which the second arc segment belongs is inscribed in the first circumference to which the first arc segment belongs, and is circumscribed in the third circumference to which the third arc segment belongs, and the first circumference and the third circumference intersect; Preferably, the first arc segment, the second arc segment, and the third arc segment satisfy: x 2 +y 2 =R2 2 ,(x-11) 2 +(y+33.24) 2 =R3 2 ,(x-14) 2 +(y+18.24) 2 =R1 2 , Wherein, (x, y) is the coordinate of any point on the second arc segment in a one-dimensional coordinate system, R1 is the curvature radius of the first arc segment, R2 is the curvature radius of the second arc segment, and R3 is the curvature radius of the third arc segment; Preferably, the groove wall of the groove-like structure comprises a first groove wall, a second groove wall and a third groove wall which are smoothly connected, the first arc segment, the second arc segment and the third arc segment correspond to the first groove wall, the second groove wall and the third groove wall respectively, the guide port is formed between the ends of the first groove wall and the third groove wall away from the second groove wall, and the first groove wall and the second groove wall intersect at the groove bottom in an area close to the guide port; Preferably, the first groove wall, the second groove wall and the third groove wall are all smooth curved surfaces.

7. An epitaxial growth device, characterized in that: include: A growth chamber, a gas supply device, and a rotating sample holder according to any one of claims 1 to 6, wherein the rotating sample holder is arranged in the growth chamber, the gas supply device is connected to the gas inlet of the gas compression device of the rotating sample holder, and is at least used to provide a gas flow with a first pressure to the gas compression device to drive the sample tray of the rotating sample holder to rotate.

8. The epitaxial growth device according to claim 7, characterized in that: Also includes: A base and a connecting rod, the rotating sample holder is arranged on the base, the connecting rod cooperates with the base, and one end of the connecting rod is arranged outside the growth chamber; And / or, in the growth chamber, a carrying surface of the sample tray for carrying the sample is inclined.

9. A method for controlling the self-rotation of a sample, characterized in that: include: Providing the rotating sample holder according to any one of claims 1 to 6, and placing the sample on the carrying table of the rotating sample holder; Providing a gas flow having a first pressure by means of a gas supply device, and inputting the gas flow into the gas compression device; The pressure of the airflow is increased from the first pressure to the second pressure by the gas compression device, and is sprayed onto the flow disturbance structure of the sample tray through the gas outlet to drive the sample tray to rotate.

10. An epitaxial growth method, characterized in that: include: Providing the epitaxial growth device according to claim 7 or 8; Epitaxially growing a sample on the supporting table of the rotating sample holder, and, during the growth of the sample, increasing the pressure of the gas flow provided by the gas supply device as the mass of the sample increases, so that the sample rotates at a constant speed along with the sample tray at a selected growth stage; Preferably, the rotation speed of the sample tray corresponds to the growth stage of the sample one by one, and the epitaxial growth method further comprises: adjusting the pressure of the airflow provided by the air supply device so that the sample tray maintains a corresponding rotation speed in different growth stages of the sample.

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