Apparatus and method for stiffness trimming of a quartz hemispherical resonator

Abstract

The application belongs to the technical field of precision measurement, and discloses a heating, excitation and frequency splitting measurement method of a quartz hemispherical resonator. The method uniformly heats the quartz hemispherical resonator by using an infrared light source, excites the quartz hemispherical resonator based on a "four-wave belly" vibration mode by a piezoelectric excitation sheet, reads vibration signals by a laser vibration tester, analyzes the frequency splitting and the direction of the stiffness uneven axis of the quartz hemispherical resonator, and adjusts the stiffness unevenness of the quartz hemispherical resonator by etching and removing weight by an ion beam. The method solves the problem of the circumferential stiffness unevenness of the quartz hemispherical resonator, and compared with the previous frequency splitting adjustment of the resonator, the application adjusts the frequency splitting of the resonator from the stiffness adjustment angle, and improves the frequency splitting temperature change interference characteristic of the quartz hemispherical resonator after adjustment.

Description

Technical Field

[0001] This invention belongs to the field of precision measurement technology, and in particular to a device and method for adjusting the stiffness of a quartz hemispherical harmonic oscillator. Background Technology

[0002] The quartz hemispherical resonator gyroscope is a typical example of a Coriolis force vibration gyroscope with the highest potential for accuracy. The gyroscopic principle of the hemispherical resonator gyroscope can be further extended to the standing wave (solid wave) sensitive angular velocity effect. The four antinodes of a quartz hemispherical resonator oscillate have two vibration modes at 45° to each other. Ideally, the natural frequencies of the two vibration modes of the quartz hemispherical resonator oscillate are the same, at which point the gyroscope has optimal performance. Although many advanced manufacturing techniques are adopted, from the perspective of vibration dynamics, unavoidable manufacturing process errors can lead to uneven circumferential distribution of the resonator's mass, stiffness, density, quality factor, and damping. This results in harmonics generated during the lip vibration of the resonator oscillator, causing a difference in the natural frequencies of the two modes of the four antinodes, a phenomenon known as frequency splitting. The presence of frequency splitting causes coupling between the vibrations of the two modes of the quartz hemispherical resonator oscillator, which is the main source of error affecting the accuracy of the hemispherical resonator gyroscope. Therefore, during the gyroscope manufacturing process, it is necessary to adjust the frequency splitting to improve the gyroscope's accuracy.

[0003] The tuning of a quartz hemispherical resonator is mainly achieved through ion beam etching to remove mass. Traditional frequency splitting tuning methods remove mass from the axes of the two resonator's lower-frequency vibration modes to achieve leveling. (The last sentence appears to be incomplete and possibly refers to a different topic: "For the vibration angular frequency of the quartz hemispherical resonator...") equivalent stiffness k equivalent quality m According to the formula

[0004] (1)

[0005] When the temperature of the resonator changes, the equivalent mass of the quartz material remains constant due to the linear correlation between its frequency characteristics and temperature, but the stiffness changes accordingly. This alters the frequency splitting of the two intrinsic modes, affecting the stability and accuracy of the hemispherical resonator gyroscope. Therefore, it is necessary to adjust the stiffness unevenness of the quartz hemispherical resonator to reduce frequency splitting and improve the stability and accuracy of the hemispherical resonator gyroscope.

[0006] The stiffness non-uniformity adjustment of the quartz hemispherical harmonic oscillator is also based on the temperature characteristics of the quartz material. Let the eigenfrequency of the harmonic oscillator be denoted as... Assuming the harmonic oscillator undergoes frequency fragmentation after mass tuning... At this time, the difference between the two equivalent stiffness axes The difference between the two equivalent mass axes satisfy .

[0007] When the ambient temperature rises, the frequency of the harmonic oscillator changes. According to equation (1), the stiffness of the harmonic oscillator changes and becomes k’ :

[0008] (2)

[0009] At this point, the stiffness changes and no longer satisfies the condition. The change in frequency splitting is denoted as:

[0010] (3)

[0011] Right now:

[0012] (4)

[0013] Among them, mass imbalance No change, stiffness imbalance The change is very small and negligible, so equation (3) can be transformed into:

[0014] (5)

[0015] Substituting equations (2) and (5) into equation (4), we get:

[0016] (6)

[0017] Equation (6) shows the relationship between frequency splitting and frequency. After frequency tuning is completed, frequency splitting will occur as the frequency changes because the stiffness (mass) imbalance still exists.

[0018] Since precision-machined quartz hemispherical harmonic oscillators are typically made of fused silica, the material density is highly uniform. Inconsistencies in stiffness and mass are usually caused by machining errors, such as coaxiality differences. Therefore, the stiffness and mass inconsistencies are highly consistent; that is, the stiffness, mass, and frequency axes are aligned. In actual tuning, adjusting the stiffness and mass of the frequency axis separately can achieve the temperature-resistance characteristics for frequency distortion.

[0019] By establishing a simulation model in ANSYS software and removing weights from the edge of the quartz hemispherical resonator, it can be observed that when the weight removal depth is less than 4 micrometers, the resonator's vibration frequency gradually decreases. According to equation (1), this stage is mainly a mass-sensitive region. When the weight removal depth exceeds 4 micrometers, the resonator's vibration frequency gradually increases. According to equation (1), this stage is mainly a stiffness-sensitive region. Therefore, removing weights from the low-frequency axis of the quartz hemispherical resonator and adjusting the mass can reduce frequency fragmentation, while removing weights from the high-frequency axis and adjusting the stiffness can reduce frequency fragmentation. Summary of the Invention

[0020] The purpose of this invention is to overcome the shortcomings of the prior art and provide a device and method for adjusting the stiffness of a quartz hemispherical harmonic oscillator.

[0021] The technical solution adopted by this invention to solve its technical problem is:

[0022] A method for heating, exciting, and measuring the frequency splitting of a quartz hemispherical resonator is disclosed. The method uses an infrared light source to uniformly heat the quartz hemispherical resonator, excites it using a piezoelectric exciter based on the "four antinodes" vibration mode of the quartz hemispherical resonator, reads the vibration signal using a laser vibrometer, analyzes the frequency splitting and the direction of the stiffness non-uniform axis of the quartz hemispherical resonator, and uses ion beam etching to remove weight and adjust the stiffness non-uniformity of the quartz hemispherical resonator.

[0023] A device for adjusting the stiffness of a quartz hemispherical resonator, the device comprising a mounting base plate, an electrically controlled displacement stage, a support fixture, an infrared heating lamp, an electrically controlled turntable, a heat-insulating glass plate, a resonator clamping fixture, a piezoelectric excitation plate, a quartz hemispherical resonator, a laser vibrometer, a baffle support frame, an etching baffle, and an ion source. The electrically controlled displacement stage, support fixture, infrared heating lamp, electrically controlled turntable, heat-insulating glass plate, resonator clamping fixture, piezoelectric excitation plate, quartz hemispherical resonator, baffle support frame, and etching baffle are connected and arranged together on the mounting base plate. The laser vibrometer and ion source are arranged longitudinally and alternately facing each other, and the infrared heating lamp and piezoelectric excitation plate are arranged horizontally and alternately facing each other.

[0024] The mounting base plate is set horizontally, and the electrically controlled displacement table is connected to and set on the horizontal side of the upper surface of the mounting base plate. The support fixture is set vertically, and the bottom of the support fixture is vertically connected to and set on the upper surface of the electrically controlled displacement table. The infrared heating lamp is set horizontally, and the top of the support fixture is connected to the horizontal end of the infrared heating lamp.

[0025] The electrically controlled turntable is connected and installed on the other side of the upper surface of the mounting base plate. A heat-insulating glass plate is coaxially connected to the upper surface of the electrically controlled turntable. The heat-insulating glass plate is set in the horizontal direction. A resonator clamping fixture is coaxially connected to the upper surface of the heat-insulating glass plate. A quartz hemispherical resonator is set in the horizontal direction. The quartz hemispherical resonator is coaxially connected to the upper surface of the resonator clamping fixture.

[0026] The other horizontal end of the infrared heating lamp is positioned opposite the quartz hemispherical resonator at a distance. The piezoelectric excitation plate is positioned horizontally and connected to each other on the upper surface of the resonator clamping fixture. The piezoelectric excitation plate is also positioned opposite the quartz hemispherical resonator at a distance. The infrared heating lamp and the piezoelectric excitation plate are positioned at intervals on both horizontal sides of the quartz hemispherical resonator, and the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator are all positioned on the same horizontal line.

[0027] The laser vibrometer and the quartz hemispherical harmonic oscillator are arranged opposite each other along the longitudinal direction, and the collimated beam of the laser detection head of the laser vibrometer can irradiate the surface of the quartz hemispherical harmonic oscillator without obstruction.

[0028] Both the baffle support frame and the etching baffle are arranged vertically. The bottom of the baffle support frame is vertically connected to the mounting base plate, and the upper part of the baffle support frame is connected to the etching baffle. The etching baffle is directly opposite to the quartz hemispherical harmonic oscillator and is detachably attached to it.

[0029] The bottom of the etching baffle has an integral etching hole. The ion source and the quartz hemispherical resonator are arranged longitudinally opposite each other and outside the baffle support frame. The ion beam output from the output end of the ion source can pass through the etching hole and etch the quartz hemispherical resonator.

[0030] The ion source and the laser vibrometer are spaced apart on both sides of the longitudinal direction of the quartz hemispherical resonator. The collimating rays of the laser detection heads of the ion source, the laser vibrometer, and the laser vibrometer are all aligned with the central axis of the quartz hemispherical resonator on the same longitudinal straight line. This longitudinal straight line is perpendicular to the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator.

[0031] Furthermore, the infrared heating lamp is a heating lamp capable of heating in a vacuum.

[0032] Furthermore, the heating lamp is an infrared lamp tube, an infrared lamp strip, or a resistance wire.

[0033] Furthermore, the diameter of the etched hole is 5 mm.

[0034] A method for stiffness adjustment of a quartz hemispherical harmonic oscillator using the apparatus as described above includes the following steps:

[0035] (1) The piezoelectric exciter is subjected to frequency sweep excitation until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then the excitation is stopped;

[0036] (2) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed by a laser vibrometer, and the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting Low-frequency axial azimuth angle information;

[0037] (3) Control the electronically controlled turntable to align the etched holes with the low-frequency axis of the quartz hemispherical resonator for quality adjustment;

[0038] (4) Repeat the above steps until the frequency is split. Adjust to below 10 MHz;

[0039] (5) Control the electric turntable to rotate at a constant speed of 2r / min, control the electric displacement table to move linearly, so that the infrared heating lamp is close to the quartz hemispherical harmonic oscillator and the quartz hemispherical harmonic oscillator is heated by the infrared heating lamp.

[0040] (6) Perform frequency sweep excitation on the piezoelectric exciter until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then stop the excitation;

[0041] (7) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed using a laser vibrometer. When the vibration frequency of the harmonic oscillator increased by more than 20 Hz, the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting High-frequency axis azimuth angle information;

[0042] (8) Control the linear movement of the electronically controlled displacement stage to move the infrared heating lamp away from the quartz hemispherical harmonic oscillator;

[0043] (9) Control the electronically controlled turntable to rotate to Align the etched holes with the high-frequency axis of the quartz hemispherical resonator to adjust the stiffness of the resonator.

[0044] (10) Repeat the above steps until the frequency splitting is corrected. Adjust to below 1 MHz.

[0045] The application of the device described above in stiffness adjustment of quartz hemispherical harmonic oscillators.

[0046] The method described above is applied to stiffness adjustment of quartz hemispherical harmonic oscillators.

[0047] The advantages and positive effects of this invention are as follows:

[0048] 1. This invention solves the problem of uneven circumferential stiffness in quartz hemispherical resonators. Based on the four-antinode vibration characteristics of the quartz hemispherical resonator, this invention utilizes the material properties of quartz under different temperature environments. By measuring the frequency fragmentation changes of the quartz hemispherical resonator at different temperatures, the related information on the stiffness unevenness of the quartz hemispherical resonator is calculated. Compared with previous frequency fragmentation tuning methods, this invention levels the frequency fragmentation from a stiffness tuning perspective, improving the resistance of the tuned quartz hemispherical resonator to temperature-dependent interference.

[0049] 2. This invention reduces the frequency fragmentation of vibration modes caused by uneven stiffness of the quartz hemispherical harmonic oscillator, thereby improving the working stability and accuracy of the hemispherical resonant gyroscope.

[0050] 3. This invention proposes a novel detection method for measuring the uneven stiffness of a quartz hemispherical harmonic oscillator. The frequency fragmentation caused by temperature after the quartz hemispherical harmonic oscillator is small.

[0051] 4. The method of the present invention has good adaptability and can be applied to different models of quartz hemispherical resonators. No pretreatment of the quartz hemispherical resonator is required, making it simple and convenient to use and expanding its application range.

[0052] 5. This invention utilizes the material properties of quartz under different temperature environments. By measuring the frequency fragmentation changes of a quartz hemispherical resonator at different temperatures, the related information on the stiffness inhomogeneity of the quartz hemispherical resonator is calculated and adjusted. This invention solves the problem of circumferential stiffness inhomogeneity in quartz hemispherical resonators. Based on the four-antinode vibration characteristics of the quartz hemispherical resonator, this invention utilizes the material properties of quartz under different temperature environments. By measuring the frequency fragmentation changes of the quartz hemispherical resonator at different temperatures, the related information on the stiffness inhomogeneity of the quartz hemispherical resonator is calculated. Compared with previous frequency fragmentation adjustment methods, this invention levels the frequency fragmentation from a stiffness adjustment perspective, improving the temperature-dependent resistance of the adjusted quartz hemispherical resonator gyroscope to frequency fragmentation. Attached Figure Description

[0053] Figure 1 This is a three-dimensional view of the structure of the device for adjusting the stiffness of the quartz hemispherical harmonic oscillator according to the present invention (the baffle support frame, etching baffle and ion source are omitted to avoid obstruction) and a schematic diagram of the detection of mass and stiffness non-uniformity of the quartz hemispherical harmonic oscillator in the method of the present invention.

[0054] Figure 2 This is a three-dimensional view of the structure of the device for adjusting the stiffness of the quartz hemispherical harmonic oscillator according to the present invention (the electrically controlled displacement stage, support fixture, infrared heating lamp, and laser vibration meter are omitted to avoid obstruction) and a schematic diagram of the etching of the quartz hemispherical harmonic oscillator in the method of the present invention. Detailed Implementation

[0055] The present invention will be further described in detail below with reference to specific embodiments. The following embodiments are merely descriptive and not limiting, and should not be used to limit the scope of protection of the present invention.

[0056] Unless otherwise specified, all raw materials used in this invention are commercially available products. Unless otherwise specified, all methods used in this invention are conventional methods in the field. All substances used in this invention are of conventional mass. Structures, connections, etc., not described in detail in this invention can be understood as conventional techniques in the field.

[0057] A method for heating, exciting, and measuring the frequency splitting of a quartz hemispherical resonator is disclosed. The method uses an infrared light source to uniformly heat the quartz hemispherical resonator, excites it using a piezoelectric exciter based on the "four antinodes" vibration mode of the quartz hemispherical resonator, reads the vibration signal using a laser vibrometer, analyzes the frequency splitting and the direction of the stiffness non-uniform axis of the quartz hemispherical resonator, and uses ion beam etching to remove weight and adjust the stiffness non-uniformity of the quartz hemispherical resonator.

[0058] This invention utilizes the material properties of quartz under different temperature environments. By measuring the frequency fragmentation changes of a quartz hemispherical resonator at different temperatures, the related information on the stiffness inhomogeneity of the quartz hemispherical resonator is calculated and adjusted. This invention solves the problem of circumferential stiffness inhomogeneity in quartz hemispherical resonators. Based on the four-antinode vibration characteristics of the quartz hemispherical resonator, this invention utilizes the material properties of quartz under different temperature environments. By measuring the frequency fragmentation changes of the quartz hemispherical resonator at different temperatures, the related information on the stiffness inhomogeneity of the quartz hemispherical resonator is calculated. Compared to previous frequency fragmentation adjustments, this invention levels the frequency fragmentation from a stiffness adjustment perspective, improving the temperature-dependent resistance of the adjusted quartz hemispherical resonator gyroscope to frequency fragmentation.

[0059] A device for adjusting the stiffness of a quartz hemispherical harmonic oscillator, such as Figures 1 to 2 As shown, the device includes a mounting base plate 1, an electrically controlled displacement stage 2, a support fixture 3, an infrared heating lamp 4, an electrically controlled turntable 5, a heat-insulating glass plate 6, a resonator clamping fixture 7, a piezoelectric excitation plate 8, a quartz hemispherical resonator 9, a laser vibrometer 10, a baffle support frame 11, an etching baffle 12, and an ion source 13. The electrically controlled displacement stage, support fixture, infrared heating lamp, electrically controlled turntable, heat-insulating glass plate, resonator clamping fixture, piezoelectric excitation plate, quartz hemispherical resonator, baffle support frame, and etching baffle are connected and arranged together on the mounting base plate. The laser vibrometer and the ion source are arranged longitudinally and alternately facing each other, and the infrared heating lamp and the piezoelectric excitation plate are arranged horizontally and alternately facing each other.

[0060] The mounting base plate is set horizontally, and the electrically controlled displacement table is connected to and set on the horizontal side of the upper surface of the mounting base plate. The support fixture is set vertically, and the bottom of the support fixture is vertically connected to and set on the upper surface of the electrically controlled displacement table. The infrared heating lamp is set horizontally, and the top of the support fixture is connected to the horizontal end of the infrared heating lamp.

[0061] The electrically controlled turntable is connected and installed on the other side of the upper surface of the mounting base plate. A heat-insulating glass plate is coaxially connected to the upper surface of the electrically controlled turntable. The heat-insulating glass plate is set in the horizontal direction. A resonator clamping fixture is coaxially connected to the upper surface of the heat-insulating glass plate. A quartz hemispherical resonator is set in the horizontal direction. The quartz hemispherical resonator is coaxially connected to the upper surface of the resonator clamping fixture.

[0062] The other horizontal end of the infrared heating lamp is positioned opposite the quartz hemispherical resonator at a distance. The piezoelectric excitation plate is positioned horizontally and connected to each other on the upper surface of the resonator clamping fixture. The piezoelectric excitation plate is also positioned opposite the quartz hemispherical resonator at a distance. The infrared heating lamp and the piezoelectric excitation plate are positioned at intervals on both horizontal sides of the quartz hemispherical resonator, and the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator are all positioned on the same horizontal line.

[0063] The laser vibrometer and the quartz hemispherical harmonic oscillator are arranged opposite each other along the longitudinal direction, and the collimated ray 10-1 of the laser detection head of the laser vibrometer can irradiate the surface of the quartz hemispherical harmonic oscillator without obstruction.

[0064] Both the baffle support frame and the etching baffle are arranged vertically. The bottom of the baffle support frame is vertically connected to the mounting base plate, and the upper part of the baffle support frame is connected to the etching baffle. The etching baffle is directly opposite to the quartz hemispherical harmonic oscillator and is detachably attached to it.

[0065] The bottom of the etching baffle has an integral etching hole 12-1. The ion source and the quartz hemispherical resonator are arranged longitudinally opposite each other and outside the baffle support frame. The ion beam output from the output end of the ion source can pass through the etching hole and etch the quartz hemispherical resonator.

[0066] The ion source and the laser vibrometer are spaced apart on both sides of the longitudinal direction of the quartz hemispherical resonator. The collimating rays of the laser detection heads of the ion source, the laser vibrometer, and the laser vibrometer are all aligned with the central axis of the quartz hemispherical resonator on the same longitudinal straight line. This longitudinal straight line is perpendicular to the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator.

[0067] The infrared heating lamp of this device, in conjunction with the electrically controlled turntable, can achieve uniform heating of the quartz hemispherical resonator. The heat-insulating glass plate ensures the stability of the resonator temperature during the test. The etching holes on the etching baffle can be designed in different sizes according to the radius of the quartz hemispherical resonator to meet different application requirements, thus expanding the application range of this device and reducing production costs.

[0068] In this embodiment, the infrared heating lamp may use an infrared lamp tube, an infrared lamp strip, or other heating methods applicable in a vacuum, including but not limited to resistance wire.

[0069] Preferably, the diameter of the etched hole is 5 mm to meet the usage requirements.

[0070] The method for stiffness adjustment of a quartz hemispherical harmonic oscillator using the device described above includes the following steps:

[0071] (1) The piezoelectric exciter is subjected to frequency sweep excitation until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then the excitation is stopped;

[0072] (2) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed by a laser vibrometer, and the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting Low-frequency axial azimuth angle Information such as;

[0073] (3) Control the electronically controlled turntable to align the etched holes with the low-frequency axis of the quartz hemispherical resonator for quality adjustment;

[0074] (4) Repeat the above steps until the frequency is split. Adjust to below 10 MHz;

[0075] (5) Control the electric turntable to rotate at a constant speed of 2r / min, control the electric displacement table to move linearly, so that the infrared heating lamp is close to the quartz hemispherical harmonic oscillator and the quartz hemispherical harmonic oscillator is heated by the infrared heating lamp.

[0076] (6) Perform frequency sweep excitation on the piezoelectric exciter until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then stop the excitation;

[0077] (7) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed using a laser vibrometer. When the vibration frequency of the harmonic oscillator increased by more than 20 Hz, the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting High-frequency axis azimuth angle Information such as;

[0078] (8) Control the linear movement of the electronically controlled displacement stage to move the infrared heating lamp away from the quartz hemispherical harmonic oscillator;

[0079] (9) Control the electronically controlled turntable to rotate to Align the etched holes with the high-frequency axis of the quartz hemispherical resonator to adjust the stiffness of the resonator.

[0080] (10) Repeat the above steps until the frequency splitting is corrected. Adjust to below 1 MHz.

[0081] The relevant tests are as follows:

[0082] The results of two stiffness adjustment cases in Table 1 show that two rounds of temperature rise and fall tests were conducted to ensure the accuracy of the test on the uniformity before and after stiffness adjustment. It can be seen that: in Case 1, the frequency split changed by 0.49mHz before stiffness adjustment under the condition of a 12Hz increase in frequency due to temperature change, and changed by 0.25mHz after stiffness adjustment; in Case 2, the frequency split changed by 0.39mHz before stiffness adjustment under the condition of a 13Hz increase in frequency due to temperature change, and changed by 0.09mHz after stiffness adjustment. This illustrates the results obtained by the present invention. Compared with the previous harmonic oscillator frequency split adjustment, the present invention balances the harmonic oscillator frequency split from the perspective of stiffness adjustment, thereby improving the resistance of the frequency split of the quartz hemispherical resonator gyroscope to temperature change interference after adjustment.

[0083] Table 1. Frequency splitting as a function of temperature before and after stiffness adjustment of the quartz hemispherical harmonic oscillator in Case 1.

[0084]

[0085] Table 2. Frequency splitting with temperature before and after stiffness adjustment of the quartz hemispherical harmonic oscillator in Case 2.

[0086]

[0087] Although embodiments of the invention have been disclosed for illustrative purposes, those skilled in the art will understand that various substitutions, variations, and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the scope of the invention is not limited to the contents disclosed in the embodiments.

Claims

1. A device for adjusting the stiffness of a quartz hemispherical harmonic oscillator, characterized in that: The device includes a mounting base plate, an electrically controlled displacement stage, a support fixture, an infrared heating lamp, an electrically controlled turntable, a heat-insulating glass plate, a resonator clamping fixture, a piezoelectric excitation plate, a quartz hemispherical resonator, a laser vibrometer, a baffle support frame, an etching baffle, and an ion source. The electrically controlled displacement stage, support fixture, infrared heating lamp, electrically controlled turntable, heat-insulating glass plate, resonator clamping fixture, piezoelectric excitation plate, quartz hemispherical resonator, baffle support frame, and etching baffle are connected and arranged together on the mounting base plate. The laser vibrometer and ion source are arranged longitudinally and alternately facing each other, and the infrared heating lamp and piezoelectric excitation plate are arranged horizontally and alternately facing each other. The mounting base plate is set horizontally, and the electrically controlled displacement table is connected to and set on the horizontal side of the upper surface of the mounting base plate. The support fixture is set vertically, and the bottom of the support fixture is vertically connected to and set on the upper surface of the electrically controlled displacement table. The infrared heating lamp is set horizontally, and the top of the support fixture is connected to the horizontal end of the infrared heating lamp. The electrically controlled turntable is connected and installed on the other side of the upper surface of the mounting base plate. A heat-insulating glass plate is coaxially connected to the upper surface of the electrically controlled turntable. The heat-insulating glass plate is set in the horizontal direction. A resonator clamping fixture is coaxially connected to the upper surface of the heat-insulating glass plate. A quartz hemispherical resonator is set in the horizontal direction. The quartz hemispherical resonator is coaxially connected to the upper surface of the resonator clamping fixture. The other horizontal end of the infrared heating lamp is positioned opposite the quartz hemispherical resonator at a distance. The piezoelectric excitation plate is positioned horizontally and connected to each other on the upper surface of the resonator clamping fixture. The piezoelectric excitation plate is also positioned opposite the quartz hemispherical resonator at a distance. The infrared heating lamp and the piezoelectric excitation plate are positioned at intervals on both horizontal sides of the quartz hemispherical resonator, and the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator are all positioned on the same horizontal line. The laser vibrometer and the quartz hemispherical harmonic oscillator are arranged opposite each other along the longitudinal direction, and the collimated beam of the laser detection head of the laser vibrometer can irradiate the surface of the quartz hemispherical harmonic oscillator without obstruction. Both the baffle support frame and the etching baffle are arranged vertically. The bottom of the baffle support frame is vertically connected to the mounting base plate, and the upper part of the baffle support frame is connected to the etching baffle. The etching baffle is directly opposite to the quartz hemispherical harmonic oscillator and is detachably attached to it. The bottom of the etching baffle has an integral etching hole. The ion source and the quartz hemispherical resonator are arranged longitudinally opposite each other and outside the baffle support frame. The ion beam output from the output end of the ion source can pass through the etching hole and etch the quartz hemispherical resonator. The ion source and the laser vibrometer are spaced apart on both sides of the longitudinal direction of the quartz hemispherical resonator. The collimating rays of the laser detection heads of the ion source, the laser vibrometer, and the laser vibrometer are all aligned with the central axis of the quartz hemispherical resonator on the same longitudinal straight line. This longitudinal straight line is perpendicular to the central axis of the infrared heating lamp, the piezoelectric excitation plate, and the quartz hemispherical resonator.

2. The device for adjusting the stiffness of a quartz hemispherical harmonic oscillator according to claim 1, characterized in that: The infrared heating lamp is a heating lamp capable of heating in a vacuum.

3. The device for adjusting the stiffness of a quartz hemispherical harmonic oscillator according to claim 2, characterized in that: The heating lamp is an infrared lamp tube, an infrared lamp strip, or a resistance wire.

4. The apparatus for adjusting the stiffness of a quartz hemispherical harmonic oscillator according to any one of claims 1 to 3, characterized in that: The diameter of the etched hole is 5 mm.

5. A method for adjusting the stiffness of a quartz hemispherical harmonic oscillator using the apparatus as described in any one of claims 1 to 4, characterized in that: Includes the following steps: (1) The piezoelectric exciter is subjected to frequency sweep excitation until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then the excitation is stopped; (2) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed by a laser vibrometer, and the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting Low-frequency axial azimuth angle information; (3) Control the electronically controlled turntable to align the etched holes with the low-frequency axis of the quartz hemispherical resonator for quality adjustment; (4) Repeat the above steps until the frequency is split. Adjust to below 10 MHz; (5) Control the electric turntable to rotate at a constant speed of 2r / min, control the electric displacement table to move linearly, so that the infrared heating lamp is close to the quartz hemispherical harmonic oscillator and the quartz hemispherical harmonic oscillator is heated by the infrared heating lamp. (6) Perform frequency sweep excitation on the piezoelectric exciter until the quartz hemispherical harmonic oscillator operates in the four-wave antinode vibration mode, and then stop the excitation; (7) The vibration signal of the quartz hemispherical harmonic oscillator was analyzed using a laser vibrometer. When the vibration frequency of the harmonic oscillator increased by more than 20 Hz, the vibration frequency of the harmonic oscillator was measured and recorded. f 2. Frequency splitting High-frequency axis azimuth angle information; (8) Control the linear movement of the electronically controlled displacement stage to move the infrared heating lamp away from the quartz hemispherical harmonic oscillator; (9) Control the electronically controlled turntable to rotate to Align the etched holes with the high-frequency axis of the quartz hemispherical resonator to adjust the stiffness of the resonator. (10) Repeat the above steps until the frequency splitting is corrected. Adjust to below 1 MHz.

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