Circuit, method, device and equipment for measuring conduction voltage drop of power device and medium

Abstract

The invention discloses a conduction voltage drop measuring circuit, method, device and equipment of a power device and a medium, the circuit comprises a soaking module, a conduction connection module, an MOS tube conduction module and an operational amplification module, and the soaking module is arranged on the conduction connection module; the input end of the to-be-tested power device is connected with the first end of the conduction connection module and the first end of the MOS tube conduction module, the preset current source is connected with the second end of the conduction connection module, the second end of the MOS tube conduction module and the first end of the operational amplification module, and the second end of the operational amplification module is connected with the MOS tube conduction module. The conduction connection module is heated through the soaking module, so that the temperature change of each device of the conduction connection module is consistent, the temperature difference of the devices is reduced, the influence of the temperature difference on an input signal is reduced, signal drift is avoided, and the measurement precision is improved; and the operation amplification module is used for amplification, so that a user can conveniently extract a measurement result.

Description

Background Art

[0002] Power generation projects involve multiple power devices. Whether different power devices work stably affects the safe operation of the entire power generation project. Among them, the on-state voltage drop is one of the important characteristic parameters of the power device. It is related to the junction temperature of the power device and can be used as a temperature-sensitive coefficient to monitor the heating state of the device. In addition, when the bonding wire inside the power device breaks, the on-state voltage drop will change. Therefore, the on-state voltage drop is an important parameter for device status detection.

[0003] To this end, accurately measuring the on-state voltage drop of power devices helps to improve the working reliability of power generation equipment. The commonly used measurement technology is: adopting a voltage clamping scheme that cooperates with power devices and auxiliary power supplies. After connecting the voltage clamping unit and the power device, the clamping voltage is determined by the cooperation of the voltage clamping unit and the power device, and the on-state voltage drop of the power device to be measured is determined by the clamping voltage.

[0004] However, the commonly used measurement technology currently has the following technical problems: when measuring, the clamping voltage often needs to be converted in order to calculate the on-state voltage drop, which is cumbersome and prone to conversion errors; and the temperature changes of various components in the measurement circuit vary when the signal is turned on, and the changes in different temperatures will cause measurement accuracy drift, which will cause the measured voltage to deviate from the actual voltage, further reducing the measurement accuracy. Summary of the invention

[0005] The present invention provides a circuit, method, device, equipment and medium for measuring the on-state voltage drop of a power device. The method can solve the technical problems of large deviation between the measurement result and the actual result in the prior art and low measurement accuracy.

[0006] A first aspect of an embodiment of the present invention provides a conduction voltage drop measurement circuit for a power device, the circuit comprising: a heat balancing module, a conduction connection module, a MOS tube conduction module and an operational amplifier module, the heat balancing module being arranged on the conduction connection module;

[0007] The input end of the power device to be tested is respectively connected to the first end of the conduction connection module and the first end of the MOS tube conduction module, the preset current source is respectively connected to the second end of the conduction connection module, the second end of the MOS tube conduction module and the first end of the operational amplifier module, and the second end of the operational amplifier module is connected to the MOS tube conduction module;

[0008] When the input end of the power device to be tested is input to the conduction connection module, the heat equalization module heats the conduction connection module to evenly heat the conduction connection module, so that the input signal of the power device to be tested is transmitted to the operational amplifier module through the MOS tube conduction module for discharge, thereby obtaining the measurement result of the conduction voltage drop.

[0009] The present invention heats the conductive connection module through the heat equalization module, so that the various devices in the conductive connection module can be heated evenly, so that the temperature changes of various devices are consistent, the temperature difference between different devices is reduced, the influence of the temperature difference on the input signal is reduced, and the signal drift is avoided, thereby improving the measurement accuracy; and the signal is amplified through the operational amplifier module, so that the user can extract the measurement result conveniently.

[0010] In combination with the first aspect, in one implementation, the conductive connection module includes: a first diode and a second diode;

[0011] The cathode end of the first diode is used as the first end of the conductive connection module to be connected to the input end of the power device to be tested, the anode end of the first diode is connected to the cathode end of the second diode, and the anode end of the second diode is used as the second end of the conductive connection module to be connected to a preset current source.

[0012] In combination with the first aspect, in one implementation, the heat spreader module includes: a VC heat spreader or a heat spreader gel.

[0013] In combination with the first aspect, in one implementation, the MOS tube conduction module includes: a first MOSFET tube, a third diode, a fourth diode and a first capacitor;

[0014] The source terminal of the first MOSFET tube is connected to the cathode terminal of the third diode and the first terminal of the first capacitor respectively, the anode terminal of the third diode is connected to the anode terminal of the fourth diode, the cathode terminal of the fourth diode and the second terminal of the first capacitor are connected to the ground terminal respectively, and the connection terminal of the first MOSFET tube, the third diode and the first capacitor is used as the first terminal of the MOS tube conduction module;

[0015] The drain end of the first MOSFET tube is used as the second end of the MOS tube conduction module and is connected to a preset current source.

[0016] In combination with the first aspect, in one implementation, the third diode is a Zener diode.

[0017] In combination with the first aspect, in one implementation, the operational amplifier module includes: a first resistor, a second resistor, a third resistor, an operational amplifier, and a second MOSFET tube;

[0018] The first end of the first resistor is used as the first end of the operational amplifier module and connected to a preset current source, the second end of the first resistor is respectively connected to the first end of the second resistor and the inverting input end of the operational amplifier, and the non-inverting input end of the operational amplifier is used as the second end of the operational amplifier module and connected to the MOS tube conduction module;

[0019] The output end of the operational amplifier is connected to the second end of the second resistor and the first end of the third resistor respectively, the second end of the third resistor is connected to the drain end of the second MOSFET tube, and the source end of the second MOSFET tube is connected.

[0020] A second aspect of an embodiment of the present invention provides a method for measuring a conduction voltage drop of a power device. The method is applicable to the conduction voltage drop measurement circuit of the power device as described above. The method includes:

[0021] Setting a DC biased sinusoidal AC current in the power device to be tested and inputting a PWM switching signal to the power device to be tested, so that the power device to be tested is turned on;

[0022] The voltage at the output end of the on-state voltage drop measurement circuit of the power device is collected to obtain the on-state voltage drop.

[0023] A third aspect of an embodiment of the present invention provides a device for measuring a conduction voltage drop of a power device. The device is applicable to the conduction voltage drop measurement circuit of the power device as described above. The device includes:

[0024] An input signal module is used to set a sinusoidal alternating current with a DC bias in the power device to be tested and input a PWM switch signal to the power device to be tested, so that the power device to be tested is turned on;

[0025] The acquisition module is used to acquire the voltage at the output end of the on-state voltage drop measurement circuit of the power device to obtain the on-state voltage drop.

[0026] Compared with the prior art, the embodiments of the present invention provide a power device on-state voltage drop measurement circuit, method, device, equipment and medium, which have the following beneficial effects: the present invention can heat the on-state connection module through the heat equalization module, so that the various devices in the on-state connection module can be heated evenly, so that the temperature changes of various devices are consistent, reducing the temperature difference between different devices, reducing the impact of temperature difference on input signals, avoiding signal drift, and thus improving measurement accuracy; and the signal is amplified through the operational amplifier module, so that users can easily extract measurement results. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a structural schematic diagram of a conduction voltage drop measurement circuit of a power device provided by an embodiment of the present invention;

[0028] Figure 2 It is a circuit schematic diagram of a power device on-state voltage drop measurement circuit provided by an embodiment of the present invention;

[0029] Figure 3It is a schematic diagram of the effect of a conduction voltage drop measurement circuit of a power device provided by an embodiment of the present invention;

[0030] Figure 4 Schematic diagram of the relationship between the diode conduction voltage drop and the current temperature provided by an embodiment of the present invention;

[0031] Figure 5 It is a schematic diagram of the conduction timing of the compensation diode and the MOS tube provided by an embodiment of the present invention;

[0032] Figure 6 The relationship between the current and the on-state voltage drop provided by an embodiment of the present invention is shown in FIG. Figure 1 ;

[0033] Figure 7 The relationship between the current and the on-state voltage drop provided by an embodiment of the present invention is shown in FIG. Figure 2 ;

[0034] Figure 8 It is a flow chart of a method for measuring the on-state voltage drop of a power device provided by one embodiment of the present invention;

[0035] Fig. 9 It is an operation flow chart of a method for measuring the on-state voltage drop of a power device provided by an embodiment of the present invention;

[0036] Fig.10 It is a structural schematic diagram of a device for measuring the on-state voltage drop of a power device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] Power generation projects involve multiple power devices. Whether different power devices work stably affects the safe operation of the entire power generation project. Among them, the on-state voltage drop is one of the important characteristic parameters of the power device. It is related to the junction temperature of the power device and can be used as a temperature-sensitive coefficient to monitor the heating state of the device. In addition, when the bonding wire inside the power device breaks, the on-state voltage drop will change. Therefore, the on-state voltage drop is an important parameter for device status detection.

[0039] To this end, accurately measuring the on-state voltage drop of power devices helps to improve the working reliability of power generation equipment. The commonly used measurement technology is: adopting a voltage clamping scheme that cooperates with power devices and auxiliary power supplies. After connecting the voltage clamping unit and the power device, the clamping voltage is determined by the cooperation of the voltage clamping unit and the power device, and the on-state voltage drop of the power device to be measured is determined by the clamping voltage.

[0040] However, the commonly used measurement technology currently has the following technical problems: when measuring, the clamping voltage often needs to be converted in order to calculate the on-state voltage drop, which is cumbersome and prone to conversion errors; and the temperature changes of various components in the measurement circuit vary when the signal is turned on, and the changes in different temperatures will cause measurement accuracy drift, which will cause the measured voltage to deviate from the actual voltage, further reducing the measurement accuracy.

[0041] In order to solve the above problems, a power device on-state voltage drop measurement circuit, method, device, equipment and medium provided in the embodiments of the present application will be introduced and explained in detail through the following specific embodiments.

[0042] Reference Figure 1 , showing a schematic structural diagram of a conduction voltage drop measurement circuit of a power device provided by an embodiment of the present invention.

[0043] Wherein, as an example, the conduction voltage drop measurement circuit of the power device may include: a heat balancing module, a conduction connection module, a MOS tube conduction module and an operational amplifier module, wherein the heat balancing module is arranged on the conduction connection module;

[0044] The input end of the power device to be tested is respectively connected to the first end of the conduction connection module and the first end of the MOS tube conduction module, the preset current source is respectively connected to the second end of the conduction connection module, the second end of the MOS tube conduction module and the first end of the operational amplifier module, and the second end of the operational amplifier module is connected to the MOS tube conduction module;

[0045] When the input end of the power device to be tested is input to the conduction connection module, the heat equalization module heats the conduction connection module to evenly heat the conduction connection module, so that the input signal of the power device to be tested is transmitted to the operational amplifier module through the MOS tube conduction module for discharge, thereby obtaining the measurement result of the conduction voltage drop.

[0046] In one embodiment, the preset current source may be a small current source of 100 mA.

[0047] In actual operation, the input end of the power device to be tested can be connected to the first end of the conduction connection module and the first end of the MOS tube conduction module respectively. After the input signal of the input end of the power device to be tested passes through the conduction connection module and the MOS tube conduction module, it can trigger the conduction connection module and the MOS tube conduction module to conduct, so that the signal can be transmitted to the operational amplifier module for amplification.

[0048] Since the heat-averaging module heats the conduction connection module, the various devices in the conduction connection module can be heated evenly, so that the temperature changes of various devices are consistent, reducing the temperature difference between different devices. When the input signal of the power device to be measured passes through the conduction connection module, the influence of the temperature difference on the input signal can be reduced, and signal drift can be avoided, thereby improving the measurement accuracy. The input signal of the power device is generally small. After the input signal passes through the conduction connection module and the MOS tube conduction module respectively, the signal can be amplified by the operational amplifier module, so that the user can easily extract the measurement result.

[0049] Reference Figure 2 , shows a circuit schematic diagram of a power device on-state voltage drop measurement circuit provided by an embodiment of the present invention.

[0050] Reference Figure 2 In one embodiment, the conductive connection module includes: a first diode D1 and a second diode D2;

[0051] The cathode end of the first diode D1 is used as the first end of the conductive connection module to be connected to the input end of the power device to be tested, the anode end of the first diode D1 is connected to the cathode end of the second diode D2, and the anode end of the second diode D2 is used as the second end of the conductive connection module to be connected to a preset current source.

[0052] In actual operation, the preset current source can provide a forward voltage drop for the second diode D2 to be turned on, and the second diode D2 can also provide a conduction voltage drop for the first diode D1.

[0053] In one embodiment, the first diode D1 and the second diode D2 are both fast recovery diodes. The first diode D1 may be a compensation diode, and the second diode D2 may be a clamping diode.

[0054] It should be noted that the first diode D1 and the second diode D2 can have different withstand voltage levels or be connected in series with the same number of diodes according to the measurement power of different voltage levels.

[0055] Reference Figure 2 In one embodiment, the heat spreader module includes: a VC heat spreader or a heat spreader gel.

[0056] Specifically, the heat spread module may also use different heat spread materials. The heat spread material should be optimized to ensure the temperature consistency of the first diode D1 and the second diode D2 as much as possible, and the first diode D1 and the second diode D2 should be kept at normal operating temperature.

[0057] Reference Figure 2 In one embodiment, the MOS tube conduction module includes: a first MOSFET tube S1, a third diode D3, a fourth diode D4 and a first capacitor C1;

[0058] The source terminal of the first MOSFET tube S1 is connected to the cathode terminal of the third diode D3 and the first terminal of the first capacitor C1 respectively, the anode terminal of the third diode D3 is connected to the anode terminal of the fourth diode D4, the cathode terminal of the fourth diode D4 and the second terminal of the first capacitor C1 are connected to the ground terminal respectively, and the connection terminal of the first MOSFET tube S1, the third diode D3 and the first capacitor C1 is used as the first terminal of the MOS tube conduction module;

[0059] The drain end of the first MOSFET tube S1 is used as the second end of the MOS tube conduction module and is connected to a preset current source.

[0060] The third diode D3 and the fourth diode D4 can be used to follow the flow of a small current when the power device is turned off, so as to maintain the clamping voltage.

[0061] In one operation mode, the third diode D3 is a Zener diode.

[0062] It should be noted that the voltage regulator diode can select different voltage regulation values ​​according to the conduction voltage drop of different power device working conditions or connect a certain number of voltage regulator diodes in series to ensure that the voltage regulation value is greater than the conduction voltage drop value of the power device application.

[0063] In actual operation, the present invention can solve the problem of precision drift caused by inconsistent diode conduction time by connecting the compensation diode (i.e., the first diode D1) in parallel with the low-voltage first MOSFET tube S1, ensuring that the diodes can be turned on at the same time, thereby improving the signal transmission efficiency. At the same time, adding heat-saturating material to the first diode D1 and the second diode D2 can solve the problem of precision drift caused by inconsistent diode temperature rise and improve the detection accuracy.

[0064] Reference Figure 2 In one embodiment, the operational amplifier module includes: a first resistor R1, a second resistor R2, a third resistor R3, an operational amplifier U1 and a second MOSFET tube S2;

[0065] The first end of the first resistor R1 is used as the first end of the operational amplifier module and connected to a preset current source, the second end of the first resistor R1 is respectively connected to the first end of the second resistor R2 and the inverting input end of the operational amplifier U1, and the non-inverting input end of the operational amplifier U1 is used as the second end of the operational amplifier module and connected to the MOS tube conduction module;

[0066] The output end of the operational amplifier U1 is connected to the second end of the second resistor R2 and the first end of the third resistor R3 respectively, the second end of the third resistor R3 is connected to the drain end of the second MOSFET tube S2, and the source end of the second MOSFET tube S2 is connected.

[0067] Reference Figure 2 In an actual operation, the non-inverting input terminal of the operational amplifier U1 is connected to the cathode terminal of the third diode D3.

[0068] Through the above operational amplifier module, the output end of the operational amplifier can be equal to the on-state voltage drop of the device when the power device is turned on. The drain end of the second MOSFET tube S2 is connected to one end of the third resistor R3, which acts on the drain voltage of the second MOSFET tube S2 to be the on-state voltage drop when the power device is turned on, and the drain voltage of the second MOSFET tube S2 is 0 potential when the power device is turned off.

[0069] A low-voltage second MOSFET tube S2 is connected in series with a resistor at the output end of the operational amplifier U1, so as to improve the efficiency of online monitoring of junction temperature by a large current temperature-sensitive electrical parameter method.

[0070] When the power device is turned on, the first MOSFET tube S1 is turned off, and the 100mA small current source passes through the first diode D1 and the second diode D2. The branch of the first MOSFET tube S1 and the branch of the third diode D3 are not conducting, and Vce_mea = 2V 2 -V 1 , V1=Vce+V D1 , V2=Vce+V D1 +V D2 , and the first diode D1 and the second diode D2 are diodes of the same type, V D1 =V D2 , that is, Vce_mea=Vce, the second MOSFET tube S2 is turned off, Vce_mea1=Vce_mea=Vce. When the power device is turned off, the first MOSFET tube S1 is turned on, and the 100mA small current source passes through the first MOSFET tube S1 and the third diode D3 branch. The first diode D1 branch and the second diode D2 branch are not conducting, and Vce_mea=V D3 +V D4 -V D1,V D4 =V D1 , that is, Vce_mea=V D3 And V D3 It is related to the voltage regulation value of the third diode D3. At this time, Vce_mea is the clamping voltage, the second MOSFET tube S2 is turned on, and Vce_mea1 is pulled down to zero potential.

[0071] In an actual operation, the power device to be tested uses an IGBT device, the collector terminal of the IGBT device can be connected to a sinusoidal AC current with a DC bias, and the gate terminal of the IGBT device can use a PWM switching signal. As the current changes sinusoidally, the conduction voltage drop of the IGBT device changes sinusoidally, and the measurement circuit of the present invention is connected. Figure 3 , which shows a schematic diagram of the effect of a conduction voltage drop measurement circuit of a power device provided by an embodiment of the present invention. The overall effect of the embodiment of the present invention is as follows: Figure 3 When the IGBT device is turned on, the output end of the present invention outputs a conduction voltage drop, and when the IGBT device is turned off, the output end of the present invention outputs a 0 potential.

[0072] Reference Figure 4-5 , respectively showing a schematic diagram of the relationship between the diode conduction voltage drop and the current temperature provided in an embodiment of the present invention and a schematic diagram of the conduction timing of the compensation diode and the MOS tube provided in an embodiment of the present invention.

[0073] The diode in the existing measurement circuit may cause accuracy drift due to inconsistent conduction voltage drop caused by inconsistent conduction time. As the measurement time goes by, the drift will further increase, thus affecting the measurement result. The diode will continue to decrease with the increase of its operating temperature under the same conduction current. Figure 4 As shown. In order to solve this problem, the main idea of ​​the present invention is to ensure that the temperature of the first diode D1 and the second diode D2 is consistent, so as to ensure the same forward conduction voltage drop. The reason for the inconsistent temperature is that the conduction time is inconsistent and the diode will cause inconsistent temperature rise under the same loss due to the dispersion of the device. Therefore, a bypass MOS tube is added to ensure that the conduction time of the two diodes is consistent, and a heat equalization device is added to ensure that the heat of the two diodes is consistent, thereby improving the measurement accuracy of the conduction voltage drop Vce. The conduction current of the first MOSFET tube S1 and the first diode D1 is as shown in Figure 5 shown.

[0074] Reference Figure 6-7 , respectively showing the relationship between the current and the on-state voltage drop provided by an embodiment of the present invention Figure 1 A schematic diagram of the relationship between current and on-state voltage drop provided by an embodiment of the present invention Figure 2 .

[0075] Another major beneficial effect of the present invention can be verified in this example. The conventional measurement circuit introduces a clamping voltage, so that in normal use, it is still necessary to remove the clamping voltage, which is unnecessary information, by software or manually. Figure 2 In the Vce_mea potential, the Vce_mea potential is the way to introduce the clamping voltage in the traditional measurement circuit, such as Figure 6 As shown, the present invention removes this introduced voltage and converts the clamping voltage into 0 potential. The measurement point is Figure 2 The Vce_mea1 potential in Figure 7 shown.

[0076] It should be noted that the first MOSFET tube S1 and the second MOSFET tube S2 do not need to withstand the high-voltage environment of the working device, and their withstand voltage only needs to be selected according to the clamping voltage level.

[0077] Furthermore, the first MOSFET tube S1 and the second MOSFET tube S2 are driven by a pair of tube driving signals in a half-bridge structure of a power device.

[0078] Furthermore, the first MOSFET tube S1 needs to be connected in parallel with the compensation diode, and the second MOSFET tube S2 needs to be used as a pull-down at the output end, with its source connected to 0 potential.

[0079] In this embodiment, the embodiment of the present invention provides a conduction voltage drop measurement circuit for a power device, and its beneficial effects are: the measurement circuit of the present invention includes a heat equalization module, a conduction connection module, a MOS tube conduction module and an operational amplifier module, and the heat equalization module is arranged on the conduction connection module; the conduction connection module is heated by the heat equalization module, so that the various devices in the conduction connection module can be heated evenly, so that the temperature changes of various devices are consistent, the temperature difference of different devices is reduced, the influence of the temperature difference on the input signal is reduced, and signal drift is avoided, thereby improving the measurement accuracy; and the signal is amplified by the operational amplifier module, so that it is convenient for users to extract measurement results.

[0080] Reference Figure 8 , shows a schematic flow chart of a method for measuring the on-state voltage drop of a power device provided by an embodiment of the present invention.

[0081] In one embodiment, the on-state voltage drop measurement method of a power device may be applicable to the on-state voltage drop measurement circuit of a power device as described in the above embodiment.

[0082] Wherein, as an example, the method for measuring the on-state voltage drop of a power device may include:

[0083] S11, setting a sinusoidal alternating current with a DC bias in the power device to be tested and inputting a PWM switching signal to the power device to be tested, so that the power device to be tested is turned on.

[0084] S12, collecting the voltage at the output end of the on-state voltage drop measurement circuit of the power device to obtain the on-state voltage drop.

[0085] In one embodiment, after the on-state voltage drop measurement circuit of the power device is connected, the power device to be tested may be an IGBT device, the collector of the power device to be tested is connected to a sinusoidal alternating current with a DC bias, the gate of the power device to be tested uses a PWM switching signal, and as the current changes sinusoidally, the on-state voltage drop changes sinusoidally, and then the voltage outputted by the output terminal of the on-state voltage drop measurement circuit of the power device can be collected to obtain the on-state voltage drop. When the IGBT device is turned off, the output terminal of the on-state voltage drop measurement circuit of the power device outputs a 0 potential.

[0086] Reference Fig. 9 , shows an operation flow chart of a method for measuring the on-state voltage drop of a power device provided by an embodiment of the present invention.

[0087] Specifically, when the power device is turned on, the first MOSFET tube S1 is turned off, and the 100mA small current source passes through the first diode D1 and the second diode D2. The first MOSFET tube S1 branch and the third diode D3 branch are not conducting, Vce_mea=2V2-V1, V1=Vce+VD1, V2=Vce+VD1+VD2, and the first diode D1 and the second diode D2 are diodes of the same type, VD1=VD2, that is, Vce_mea=Vce, the second MOSFET tube S2 is turned off, Vce_mea1=Vce_mea=Vce, When the power device is turned off, the first MOSFET tube S1 is turned on, and the 100mA small current source passes through the first MOSFET tube S1 and the third diode D3 branch. The first diode D1 branch and the second diode D2 branch are not conducting. Vce_mea=VD3+VD4-VD1, VD4=VD1, that is, Vce_mea=VD3, and VD3 is related to the voltage stabilization value of the voltage stabilizing diode. At this time, Vce_mea is the clamping voltage, the second MOSFET tube S2 is turned on, and Vce_mea1 is pulled down to zero potential.

[0088] In this embodiment, an embodiment of the present invention provides a method for measuring the on-state voltage drop of a power device, and its beneficial effect is that: the present invention can connect a power device to a on-state voltage drop measurement circuit of the power device, and automatically realize the on-state voltage drop measurement by controlling the power device to be measured, which not only improves the measurement accuracy, but also simplifies the measurement process and improves the measurement efficiency.

[0089] The embodiment of the present invention also provides a device for measuring the on-state voltage drop of a power device, see Fig.10 , showing a schematic structural diagram of a device for measuring the on-state voltage drop of a power device provided in one embodiment of the present invention.

[0090] As an example, the on-state voltage drop measurement device of a power device is applicable to the on-state voltage drop measurement circuit of a power device as described in the above embodiment.

[0091] The on-state voltage drop measurement device of the power device may include:

[0092] The input signal module 201 is used to set a sinusoidal alternating current with a DC bias in the power device under test and input a PWM switch signal to the power device under test to turn on the power device under test;

[0093] The acquisition module 202 is used to acquire the voltage at the output end of the on-state voltage drop measurement circuit of the power device to obtain the on-state voltage drop.

[0094] Those skilled in the art can clearly understand that, for the sake of convenience and brevity of description, the specific working process of the device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0095] Furthermore, an embodiment of the present application also provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the method for measuring the on-state voltage drop of a power device as described in the above embodiment is implemented.

[0096] Furthermore, an embodiment of the present application also provides a computer-readable storage medium, which stores a computer-executable program, and the computer-executable program is used to enable a computer to execute the on-state voltage drop measurement method of a power device as described in the above embodiment.

[0097] It should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the embodiments of the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. When an element such as a layer, region or substrate is referred to as being "on" or "above" another element, it can be directly on the other element, or there can also be an intermediate element. On the contrary, when an element is referred to as "directly on" or "above" another element, there is no intermediate element. It should also be understood that when an element is referred to as being "under" or "below" another element, it can be directly under or below the other element, or there can also be an intermediate element. On the contrary, when an element is referred to as being "directly under" or "below" another element, there is no intermediate element. Unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0098] Those skilled in the art will appreciate that the embodiments of the present application may also provide computer program products. Therefore, the present application may adopt the form of complete hardware embodiments, complete software embodiments, or embodiments in combination with software and hardware. Moreover, the present application may adopt the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program codes.

[0099] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), apparatuses, and computer program products according to the embodiments of the present application. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0100] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0101] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0102] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A power device on-state voltage drop measurement circuit, characterized in that: The circuit comprises: a heat-equalizing module, a conduction connection module, a MOS tube conduction module and an operational amplifier module, wherein the heat-equalizing module is arranged on the conduction connection module; The input end of the power device to be tested is respectively connected to the first end of the conduction connection module and the first end of the MOS tube conduction module, the preset current source is respectively connected to the second end of the conduction connection module, the second end of the MOS tube conduction module and the first end of the operational amplifier module, and the second end of the operational amplifier module is connected to the MOS tube conduction module; When the input end of the power device to be tested is input to the conduction connection module, the heat equalization module heats the conduction connection module to evenly heat the conduction connection module, so that the input signal of the power device to be tested is transmitted to the operational amplifier module through the MOS tube conduction module for discharge, thereby obtaining the measurement result of the conduction voltage drop.

2. The on-state voltage drop measurement circuit of a power device according to claim 1, characterized in that: The conduction connection module includes: a first diode and a second diode; The cathode end of the first diode is used as the first end of the conductive connection module to be connected to the input end of the power device to be tested, the anode end of the first diode is connected to the cathode end of the second diode, and the anode end of the second diode is used as the second end of the conductive connection module to be connected to a preset current source.

3. The on-state voltage drop measurement circuit of a power device according to claim 1, characterized in that: The heat-spreading module includes: a VC heat-spreading plate or a heat-spreading gel.

4. The on-state voltage drop measurement circuit of a power device according to claim 1, characterized in that: The MOS tube conduction module includes: a first MOSFET tube, a third diode, a fourth diode and a first capacitor; The source terminal of the first MOSFET tube is connected to the cathode terminal of the third diode and the first terminal of the first capacitor respectively, the anode terminal of the third diode is connected to the anode terminal of the fourth diode, the cathode terminal of the fourth diode and the second terminal of the first capacitor are connected to the ground terminal respectively, and the connection terminal of the first MOSFET tube, the third diode and the first capacitor is used as the first terminal of the MOS tube conduction module; The drain end of the first MOSFET tube is used as the second end of the MOS tube conduction module and is connected to a preset current source.

5. The on-state voltage drop measurement circuit of a power device according to claim 4, characterized in that: The third diode is a voltage regulator diode.

6. The on-state voltage drop measurement circuit of a power device according to claim 5, characterized in that: The operational amplifier module includes: a first resistor, a second resistor, a third resistor, an operational amplifier and a second MOSFET tube; The first end of the first resistor is used as the first end of the operational amplifier module and connected to a preset current source, the second end of the first resistor is respectively connected to the first end of the second resistor and the inverting input end of the operational amplifier, and the non-inverting input end of the operational amplifier is used as the second end of the operational amplifier module and connected to the MOS tube conduction module; The output end of the operational amplifier is connected to the second end of the second resistor and the first end of the third resistor respectively, the second end of the third resistor is connected to the drain end of the second MOSFET tube, and the source end of the second MOSFET tube is connected.

7. A method for measuring the on-state voltage drop of a power device, characterized in that: The method is applicable to the on-state voltage drop measurement circuit of the power device according to any one of claims 1 to 6, and the method comprises: Setting a DC biased sinusoidal AC current in the power device to be tested and inputting a PWM switching signal to the power device to be tested, so that the power device to be tested is turned on; The voltage at the output end of the on-state voltage drop measurement circuit of the power device is collected to obtain the on-state voltage drop.

8. A device for measuring the on-state voltage drop of a power device, characterized in that: The device is applicable to the on-state voltage drop measurement circuit of the power device according to any one of claims 1 to 6, and the device comprises: An input signal module is used to set a DC biased sinusoidal AC current in the power device to be tested and input a PWM switch signal to the power device to be tested, so that the power device to be tested is turned on; The acquisition module is used to acquire the voltage at the output end of the on-state voltage drop measurement circuit of the power device to obtain the on-state voltage drop.

9. An electronic device, comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the on-state voltage drop measurement method of a power device as claimed in claim 7 when executing the computer program.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer-executable program, and the computer-executable program is used to enable a computer to execute the on-state voltage drop measurement method of a power device as claimed in claim 7.

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