Polishing solution and chemical polishing method

Abstract

The invention relates to a polishing solution and a chemical polishing method. The polishing solution comprises the following components in parts by mass: 40-60 parts of an alkaline corrosive agent and 40-60 parts of a diluent, the alkaline corrosive comprises alkali metal hydroxide, and the diluent comprises at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide. The polishing solution is good in stability, long in service life, good in polishing effect and capable of reducing harm to the environment. The polishing solution is used for polishing glass, effectively reduces the roughness of the glass surface, improves the polishing efficiency and shortens the polishing time.

Description

Technical Field

[0001] The present application relates to the technical field of polishing, and in particular to a polishing liquid and a chemical polishing method. Background Art

[0002] Traditional polishing liquids for chemical polishing of glass include hydrofluoric acid or nitrates. Among them, polishing liquids containing hydrofluoric acid have limited effect on reducing the roughness of glass, and hydrofluoric acid is seriously harmful to the environment; polishing liquids containing nitrates will cause the overall polishing time to be too long and result in a shorter service life of the polishing liquid.

[0003] Therefore, it is necessary to improve the traditional technology. Summary of the invention

[0004] Based on this, the present application provides a polishing liquid and a chemical polishing method with better polishing effect.

[0005] The technical solution of this application to solve the above technical problems is as follows.

[0006] The first aspect of the present application provides a polishing liquid, which comprises, by mass, 40 to 60 parts of an alkaline corrosive agent and 40 to 60 parts of a diluent; the alkaline corrosive agent comprises an alkali metal hydroxide, and the diluent comprises at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide.

[0007] In some of the embodiments, the polishing liquid includes, by weight, 50-60 parts of alkaline corrosive agent and 40-50 parts of diluent.

[0008] In some embodiments, the polishing liquid contains potassium ions.

[0009] In some embodiments, in the polishing liquid, the mass of the potassium ions accounts for 10% to 30% of the total mass of the polishing liquid.

[0010] In some embodiments, in the polishing liquid, the mass of the potassium ions accounts for 12% to 25% of the total mass of the polishing liquid.

[0011] In some embodiments, in the polishing solution, the alkaline etchant includes at least one of potassium hydroxide and sodium hydroxide.

[0012] In some embodiments, in the polishing solution, the alkaline etchant includes potassium hydroxide and sodium hydroxide.

[0013] In some embodiments, in the polishing liquid, the mass ratio of the potassium hydroxide to the sodium hydroxide is (0.5~1.5):1.

[0014] In some embodiments, in the polishing liquid, the diluent includes sodium chloride and sodium bromide.

[0015] In some embodiments, in the polishing liquid, the mass ratio of the sodium chloride to the sodium bromide is (0.5~1.5):1.

[0016] A second aspect of the present application provides a chemical polishing method, comprising the following steps:

[0017] The glass to be processed is placed in the above-mentioned polishing liquid to perform chemical polishing treatment; the temperature of the chemical polishing treatment is 420°C to 520°C.

[0018] In some embodiments, in the chemical polishing method, the chemical polishing treatment time is 0.2 h~5 h.

[0019] In some of the embodiments, in the chemical polishing method, the temperature of the chemical polishing treatment is 420° C. to 500° C., and the time is 1 h to 3 h.

[0020] The polishing liquid of the present application has the following beneficial effects:

[0021] The polishing liquid of the present application uses a suitable type of halide metal salt as a diluent and an alkali metal hydroxide as an alkaline corrosive agent. The two are matched with each other in a suitable proportion, so that the polishing liquid has better stability, longer service life, better polishing effect, and can also reduce harm to the environment.

[0022] The polishing liquid of the present application is used for polishing glass and can form a "mucus film layer" on the glass surface. The "mucus film layer" can make the etching reaction rate at the protrusions of the glass surface higher than that at the pits. Continuous polishing can make the uneven surface of the glass surface smoother, thereby effectively reducing the roughness of the glass surface, improving polishing efficiency, and shortening polishing time. DETAILED DESCRIPTION

[0023] The present application will be further described in detail below in conjunction with the embodiments and examples. It should be understood that these embodiments and examples are only used to illustrate the present application and are not used to limit the scope of the present application. The purpose of providing these embodiments and examples is to make the understanding of the disclosure of the present application more thorough and comprehensive. It should also be understood that the present application can be implemented in many different forms, and is not limited to the embodiments and examples described herein. Those skilled in the art can make various changes or modifications without violating the connotation of the present application, and the equivalent form obtained also falls within the protection scope of the present application. For example, the features described or described as part of an embodiment can be combined in another embodiment in a suitable manner to produce a new embodiment. In addition, in the description below, a large number of specific details are given in order to provide a more comprehensive understanding of the present application, and it should be understood that the present application can be implemented without one or more of these details.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing implementation modes and embodiments and are not intended to limit this application.

[0025] Unless otherwise specified or incompatible herewith, the terms and phrases used herein shall have the following meanings:

[0026] In the present application, "plurality", "multiple", "multiple times", etc., unless otherwise specified, refer to a quantity greater than 2 or equal to 2. For example, "one or more" means one or greater than or equal to two.

[0027] As used herein, "combination thereof", "any combination thereof", "any combination thereof" etc. include all suitable combinations of any two or more of the listed items.

[0028] Herein, the “suitable” mentioned in “suitable combination”, “suitable method”, “any suitable method”, etc., shall be based on the ability to implement the technical solution of this application, solve the technical problems of this application, and achieve the expected technical effects of this application.

[0029] Herein, "preferred", "better", "more preferred", and "suitable" are only used to describe implementation methods or examples with better effects, and it should be understood that they do not constitute a limitation on the scope of protection of this application. If multiple "preferred" items appear in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "preferred" item is independent.

[0030] In the present application, "further", "further", "particularly" and the like are used for descriptive purposes to indicate differences in content, but should not be construed as limiting the scope of protection of the present application.

[0031] In this application, "optionally", "optional", and "optional" mean optional or dispensable, that is, any one of the two parallel schemes of "yes" or "no". If multiple "options" appear in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "optional" is independent.

[0032] In the present application, the terms "first", "second", "third", "fourth", etc. in "the first aspect", "the second aspect", "the third aspect", "the fourth aspect", etc. are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or quantity, nor can they be understood as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first", "second", "third", "fourth", etc. only serve the purpose of non-exhaustive enumeration and description, and it should be understood that they do not constitute a closed limitation on quantity.

[0033] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0034] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum value and the maximum value) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to the integers in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be combined. In other words, unless otherwise specified, the numerical range disclosed herein should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows broadly including numerical interval types such as percentage intervals, ratio intervals, and ratio intervals.

[0035] The temperature parameters in this application, unless otherwise specified, are allowed to be either constant temperature treatment or to vary within a certain temperature range. It should be understood that the constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument. Fluctuations within the range of ±5°C, ±4°C, ±3°C, ±2°C, and ±1°C are allowed.

[0036] In this application, the term "room temperature" or "normal temperature" generally refers to 4°C to 35°C, for example, 20°C ± 5°C. In some embodiments of this application, "room temperature" or "normal temperature" refers to 10°C to 30°C. In some embodiments of this application, "room temperature" or "normal temperature" refers to 20°C to 30°C.

[0037] In this application, when referring to the unit of a data range, if there is a unit only after the right endpoint, it means that the units of the left and right endpoints are the same. For example, 3~5 h means that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0038] All documents mentioned in this application are cited as references in this application, just as each document is cited as reference separately. Unless they conflict with the invention purpose and / or technical solution of this application, the cited documents involved in this application are cited with all contents and all purposes. When the cited documents are involved in this application, the definitions of relevant technical features, terms, nouns, phrases, etc. in the cited documents are also cited. When the cited documents are involved in this application, the examples and preferred methods of the cited relevant technical features can also be incorporated into this application as references, but are limited to the implementation of this application. It should be understood that when the cited content conflicts with the description in this application, the present application shall prevail or be modified adaptively according to the description of this application.

[0039] The mass or weight of the relevant components mentioned in the specification of the embodiments of the present application may not only refer to the specific content of each component, but also indicate the proportional relationship of the mass or weight between the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the specification of the embodiments of the present application, it is within the scope disclosed in the specification of the embodiments of the present application. Specifically, the mass or weight described in the specification of the embodiments of the present application may be units known in the chemical industry such as μg, mg, g, and kg.

[0040] After research, the present application found that the polishing liquid containing nitrates will cause the overall polishing time to be too long and the reasons for the shorter service life of the polishing liquid include:

[0041] The decomposition temperature of nitrate is 380℃, and the polishing temperature is controlled at about 300℃. However, when the polishing temperature is maintained, the temperature near the heating tube will be much higher than 300℃. At this time, nitrate will slowly decompose, and the decomposition temperature of nitrite generated after decomposition is only 320℃. Nitrite further decomposes to generate metal oxides. The oxides at the molecular level will aggregate into fine oxide particles. The fine oxide particles will adhere to the surface of the glass to form an oxide film layer, which will completely wrap the uneven surface of the glass surface and isolate the contact between the glass and the polishing liquid. Therefore, the etching of the polishing liquid will be greatly inhibited in the early stage of polishing, and the purpose of making the etching reaction rate of the protrusions on the glass surface higher than that of the pits will not be achieved, and the effect of reducing the roughness will be greatly weakened; as the degree of nitrate decomposition increases, the etching rate of the polishing liquid will further decrease until it is completely ineffective; resulting in the overall polishing time being too long (9 h) and the overall polishing liquid having a short service life (the furnace life is within 5 furnaces).

[0042] The decomposition of nitrates at high temperatures is inevitable. Taking sodium nitrate as an example, the decomposition process is as follows:

[0043] 2NaNO3=2NaNO2+O2 (decomposition temperature 380℃);

[0044] 2NaNO2=Na2O+NO+NO2 (decomposition temperature 320℃).

[0045] An embodiment of the present application provides a polishing liquid, which includes, by mass, 40 to 60 parts of an alkaline corrosive agent and 40 to 60 parts of a diluent; the alkaline corrosive agent includes an alkali metal hydroxide, and the diluent includes at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide.

[0046] By using a suitable type of halide metal salt as a diluent and an alkali metal hydroxide as an alkaline corrosive agent, the two are matched with each other in a suitable proportion, so that the stability of the polishing liquid is better, and the risk of inhibiting the etching rate due to the decomposition of the diluent is reduced, thereby improving the polishing efficiency, improving the polishing effect, and prolonging the service life of the polishing liquid (the furnace life is more than 30 furnaces), and reducing the harm to the environment.

[0047] When this polishing liquid is used to polish glass, a "mucus film layer" can be formed on the glass surface. This "mucus film layer" can make the etching reaction rate at the protrusions of the glass surface higher than that at the pits. Continuous polishing can make the uneven surface of the glass smoother, thereby effectively reducing the roughness of the glass surface, improving polishing efficiency and shortening polishing time.

[0048] For example, when the polishing liquid is used to polish silicate glass, the alkaline corrosive agent reacts with the silicate glass to form sodium silicate and sodium aluminate. Sodium silicate and sodium aluminate can form a "mucus film layer" on the glass surface with the alkaline corrosive agent and a suitable type of diluent in a suitable proportion, thereby effectively reducing the roughness of the glass surface in a relatively short time.

[0049] In the process of exploring the polishing liquid, the present application found that the hydroxides corresponding to alkaline earth metals (beryllium, magnesium, calcium, strontium, barium) are easy to decompose at high temperatures; nitrates and organic acid radicals (such as acetate, citrate, oxalate) are easy to decompose at high temperatures. Sodium iodide and potassium iodide have poor stability in the molten state, and iodine ions are easily oxidized to generate toxic iodine vapor; the melting points of sodium fluoride, sodium phosphate, sodium sulfate, sodium silicate, sodium carbonate, potassium fluoride, potassium phosphate, potassium sulfate, potassium silicate, and potassium carbonate are all above 850°C. If the above metal salts are used as diluents in the polishing liquid, the melting temperature of the polishing liquid is difficult to be lower than 500°C; the melting point of sodium chloride is 801°C, the melting point of sodium bromide is 755°C, the melting point of potassium chloride is 770°C, and the melting point of potassium bromide is 734°C; by using these suitable types of halide metal salts as diluents and matching them with alkaline corrosive agents in appropriate proportions, the mixed salt has a eutectic point, which will be lower than the melting point of its components alone, and can even be controlled below 500°C. If the temperature is too high, the etching rate of the chemical polishing process will be too fast and the chemical polishing process will be uncontrollable. However, by using an alkaline etchant including an alkali metal hydroxide and a diluent including at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide, a polishing liquid with high polishing efficiency and controllable polishing process can be obtained.

[0050] Furthermore, if the diluent concentration is too high (for example, 70%), the overall melting point is high (>500°C), the etching rate is too fast, and chemical polishing cannot be performed stably; if the alkaline corrosive agent concentration is too high (for example, 70%), the melting point of the polishing liquid can be effectively reduced (<400°C), but the high alkali concentration will also cause the etching rate to be too fast, making chemical polishing unable to be performed stably.

[0051] It can be understood that, in the polishing liquid, the alkaline corrosive agent includes but is not limited to 40 parts, 41 parts, 42 parts, 43 parts, 44 parts, 45 parts, 46 parts, 47 parts, 48 ​​parts, 49 parts, 50 parts, 51 parts, 52 parts, 53 parts, 54 parts, 55 parts, 56 parts, 57 parts, 58 parts, 59 parts, and 60 parts; the diluent includes but is not limited to 40 parts, 41 parts, 42 parts, 43 parts, 44 parts, 45 parts, 46 parts, 47 parts, 48 ​​parts, 49 parts, 50 parts, 51 parts, 52 parts, 53 parts, 54 parts, 55 parts, 56 parts, 57 parts, 58 parts, 59 parts, and 60 parts; in some examples, it can be within the range consisting of any two of these point values ​​as end values, the same below.

[0052] In some of the examples, the polishing liquid includes, by weight, 50-60 parts of an alkaline corrosive agent and 40-50 parts of a diluent.

[0053] In some of the examples, the polishing liquid consists of the following components, calculated by weight: 40-60 parts of alkaline etchant and 40-60 parts of diluent.

[0054] In some of the examples, the polishing liquid includes, by mass percentage, 40% to 60% of an alkaline etchant and 40% to 60% of a diluent.

[0055] It can be understood that in some of the examples, in the polishing liquid, the alkaline corrosive agent includes but is not limited to 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, and 60% by mass; the diluent includes but is not limited to 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, and 60%.

[0056] In some of the examples, the polishing solution is composed of the following components by mass percentage: 40% to 60% of alkaline etchant and 40% to 60% of diluent.

[0057] In some of these examples, the polishing fluid contains potassium ions.

[0058] Potassium ions are added to the polishing liquid to react with glass to form potassium silicate, which has low viscosity and can effectively slow down the accumulation of the "mucus film layer" on the glass surface. This is beneficial to the formation of a uniform and stable "mucus film layer" in the early stage of chemical polishing, thereby further improving the chemical polishing effect.

[0059] It is understood that the polishing liquid contains potassium ions, which means in some examples that the alkaline etchant includes at least potassium ions, or the diluent includes at least one of potassium chloride and potassium bromide.

[0060] In some of these examples, the mass of potassium ions in the polishing liquid accounts for 10% to 30% of the total mass of the polishing liquid.

[0061] By controlling the potassium ion content in the polishing liquid, the formation of a uniform and stable "mucus film layer" can be further promoted in the early stage of chemical polishing.

[0062] In some of the examples, the mass of the potassium ion-containing reagent in the polishing solution accounts for 10% to 30% of the total mass of the polishing solution.

[0063] It can be understood that in the polishing liquid, the percentage of the mass of potassium ions to the total mass of the polishing liquid includes but is not limited to 21%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, and 30%.

[0064] In some of the examples, the mass of the potassium ion-containing reagent in the polishing solution accounts for 12% to 25% of the total mass of the polishing solution.

[0065] In some examples, in the polishing liquid, the alkaline etchant includes at least one of potassium hydroxide and sodium hydroxide. Among alkali metals, rubidium and cesium are rare elements, and lithium is expensive. The alkaline etchant includes at least one of potassium hydroxide and sodium hydroxide to reduce the cost of the polishing liquid.

[0066] In some of these examples, the alkaline etchant in the polishing solution includes potassium hydroxide and sodium hydroxide.

[0067] In some of the examples, the mass ratio of potassium hydroxide to sodium hydroxide in the polishing liquid is (0.5~1.5):1.

[0068] It will be appreciated that the mass ratio of potassium hydroxide to sodium hydroxide includes but is not limited to 0.5:1, 0.6:1, 0.7:1, 0.8:1, 0.9:1, 1.0:1, 1.1:1, 1.2:1, 1.3:1, 1.4:1, and 1.5:1.

[0069] Optionally, the mass ratio of potassium hydroxide to sodium hydroxide is (0.5~0.8):1.

[0070] In some examples, in the polishing liquid, the diluent includes at least two of sodium chloride, potassium chloride, sodium bromide, and potassium bromide.

[0071] In some examples, in the polishing slurry, the diluent includes sodium chloride and sodium bromide.

[0072] In some of the examples, the mass ratio of sodium chloride to sodium bromide in the polishing liquid is (0.5~1.5):1.

[0073] It will be appreciated that the mass ratio of sodium chloride to sodium bromide includes, but is not limited to, 0.5:1, 0.6:1, 0.7:1, 0.8:1, 0.9:1, 1.0:1, 1.1:1, 1.2:1, 1.3:1, 1.4:1, and 1.5:1.

[0074] An embodiment of the present application provides a method for preparing a polishing liquid, comprising the following steps:

[0075] 40-60 parts of an alkaline etchant and 40-60 parts of a diluent are mixed by weight; the alkaline etchant includes an alkali metal hydroxide, and the diluent includes at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide.

[0076] An embodiment of the present application provides a chemical polishing method, comprising the following steps:

[0077] The glass to be processed is placed in the above-mentioned polishing liquid for chemical polishing treatment; the temperature of the chemical polishing treatment is 420°C to 520°C.

[0078] It is understood that the temperature of the chemical polishing treatment includes but is not limited to 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, 480°C, 490°C, 500°C, 510°C, and 520°C.

[0079] In some of the examples, in the chemical polishing method, the temperature of the chemical polishing treatment is 420°C to 500°C.

[0080] In some of the examples, in the chemical polishing method, the temperature of the chemical polishing treatment is 440°C to 480°C.

[0081] By controlling the temperature of the chemical polishing process, better polishing effects can be obtained.

[0082] If the temperature is too high, the etching rate of the polishing liquid will be too fast, the reaction will be uncontrollable, and a uniform polishing surface cannot be formed; if the mixed eutectic point of the alkaline corrosive agent and the above-mentioned diluent is difficult to be lower than 350°C, and if the temperature is too low, the polishing liquid will not be able to form a uniform liquid state, and chemical polishing will not be able to form a uniform polishing surface.

[0083] In some of the examples, in the chemical polishing method, the time of the chemical polishing treatment is 0.5 h to 5 h.

[0084] It will be appreciated that the time for chemical polishing treatment includes but is not limited to 0.5h, 0.8h, 1h, 1.2h, 1.5h, 1.8h, 2h, 2.2h, 2.5h, 2.8h, 3h, 3.2h, 3.5h, 3.8h, 4h, 4.2h, 4.5h, 4.8h, and 5h.

[0085] In some of the examples, in the chemical polishing method, the chemical polishing treatment time is 1 h to 3 h.

[0086] In some of the examples, in the chemical polishing method, the chemical polishing treatment time is 2 h~3 h.

[0087] By further controlling the time of chemical polishing treatment, the polishing effect can be further improved to reduce the risk of unsatisfactory polishing effect due to insufficient etching and too short polishing time; and reduce the risk of uneven etching due to continued etching after the thickness of the mucus film layer reaches a certain level and destroying the uniform mucus film layer on the surface.

[0088] It can be understood that within the appropriate time range, the longer the etching time, the thicker the surface "mucus film layer" and the better the polishing effect; and as the thickness of the "mucus film layer" increases, the contact degree between the glass and the polishing liquid becomes smaller, and the polishing liquid etching rate will gradually decrease until the surface roughness of the glass can no longer be further reduced; at this moment, if etching continues, it will cause the uniform "mucus film layer" on the surface to partially fall off, resulting in uneven etching, causing the surface roughness to deteriorate.

[0089] It can be understood that the temperature of the chemical polishing process is controlled by controlling the temperature of the polishing liquid.

[0090] In some of the examples, before placing the glass to be treated in the polishing solution, the temperature of the polishing solution is raised to the temperature of the chemical polishing treatment and then kept at this temperature for 2 h to 5 h.

[0091] Insulation can promote the melting of alkaline corrosive agents and diluents in the polishing liquid and improve the polishing effect.

[0092] It can be understood that after the glass to be processed is chemically polished in the polishing liquid, it is taken out and cleaned.

[0093] The polishing liquid of the present application is mainly in the state of molten salt, including an alkaline corrosive agent and a diluent. The alkaline corrosive agent reacts with the glass, and the product and the diluent jointly form a mucus film layer on the glass surface to achieve a polishing effect. All substances in the system except the alkaline corrosive agent can be understood as diluents. By adjusting the concentration of the alkaline corrosive agent and the use temperature, the purpose of controllable chemical polishing reaction process can be achieved.

[0094] The present application is further described in detail below in conjunction with specific implementation methods, but the implementation methods of the present application are not limited thereto.

[0095] Corning glass-ceramic, 161*74mm plate was used as the sample for chemical polishing.

[0096] Example 1

[0097] Calculated by mass percentage, the polishing liquid includes: alkaline corrosive agent (30% sodium hydroxide, 20% potassium hydroxide) and diluent (25% sodium chloride, 25% sodium bromide).

[0098] A chemical polishing method comprises the following steps:

[0099] (1) Mixing an alkaline corrosive agent and a diluent according to a formula ratio to prepare a polishing liquid;

[0100] (2) Raise the polishing liquid temperature to 460°C and keep it warm for 2 hours;

[0101] (3) Put the cleaned glass to be chemically polished into the polishing liquid for chemical polishing for 2 hours, then take out the glass and clean it;

[0102] (4) Confirm the surface roughness.

[0103] The difference between Examples 2 to 5 and Comparative Examples 1 to 3 and Example 1 is only that the types or mass percentages of the alkaline corrosive agent and the diluent in the polishing liquid are different, as shown in Table 1.

[0104] Table 1

[0105]

[0106] Test method: After chemical polishing, a white light interferometer was used to perform surface morphology test to confirm the surface roughness state. Each group of verification tests tested 5 pieces of products, and each product tested 5 points. The specific results were based on the average of 25 data. The experimental results (maximum depth Sz, average height Sa) are shown in Table 2. Comparative Example 3 was not chemically polished.

[0107] Table 2

[0108]

[0109] As can be seen from Table 2, compared with Comparative Examples 1 to 3, Examples 1 to 6 can obtain better polishing effects in 2 hours. Due to the high alkali concentration in Comparative Example 1, the initial chemical polishing etching speed is too fast, resulting in chemical polishing failure; due to the high diluent content in Comparative Example 2, the polishing liquid is not a uniform liquid, affecting the chemical polishing effect; compared with Example 6, the system cations are all sodium ions and do not contain potassium ions. The polishing liquids of Examples 1 to 5 contain potassium ions, and the uniformity of the "mucus film layer" formed in the initial stage of chemical polishing is better, and the chemical polishing effect is better.

[0110] The difference between Examples 7 to 13 and Comparative Example 5 and Example 1 is only that the temperature or time of the chemical polishing treatment is different (the polishing liquid is the same), as shown in Table 3.

[0111] Table 3

[0112]

[0113] Test method: After chemical polishing, a white light interferometer is used to perform surface morphology test to confirm the surface roughness state. Each group of verification tests is 5 pieces of products, and each product is tested at 5 points. The specific results are based on the average value of 25 data. The experimental results are shown in Table 4.

[0114] Table 4

[0115]

[0116] It can be seen from Table 4 that the polishing effects of Examples 1 and 7 to 13 are better than those of Comparative Examples 4 to 5. In Comparative Example 5, due to the too low chemical polishing temperature, the polishing liquid is not in a uniform liquid state, which affects the chemical polishing effect.

[0117] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0118] The above-described embodiments only express several implementation methods of the present application, which is convenient for understanding the technical solution of the present application in detail, but it cannot be understood as limiting the scope of protection of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the scope of protection of the present application. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided in the present application are all within the scope of protection of the claims attached to the present application. Therefore, the scope of protection of the patent of this application shall be based on the content of the attached claims, and the description can be used to interpret the content of the claims.

Claims

1. A polishing liquid, characterized in that: The polishing liquid comprises, by weight, 40 to 60 parts of an alkaline corrosive agent and 40 to 60 parts of a diluent; the alkaline corrosive agent comprises an alkali metal hydroxide, and the diluent comprises at least one of sodium chloride, potassium chloride, sodium bromide and potassium bromide.

2. The polishing liquid according to claim 1, characterized in that Calculated by weight, the polishing liquid includes: 50-60 parts of alkaline corrosive agent and 40-50 parts of diluent.

3. The polishing liquid according to claim 1, characterized in that The polishing liquid contains potassium ions.

4. The polishing liquid according to claim 3, characterized in that The mass of the potassium ions accounts for 10% to 30% of the total mass of the polishing liquid; optionally, the mass of the potassium ions accounts for 12% to 25% of the total mass of the polishing liquid.

5. The polishing liquid according to any one of claims 1 to 4, characterized in that The alkaline corrosive agent includes at least one of potassium hydroxide and sodium hydroxide.

6. The polishing liquid according to claim 5, characterized in that The alkaline corrosive agent includes potassium hydroxide and sodium hydroxide; optionally, the mass ratio of the potassium hydroxide to the sodium hydroxide is (0.5~1.5):

1.

7. The polishing liquid according to any one of claims 1 to 4 and 6, characterized in that: The diluent includes sodium chloride and sodium bromide; optionally, the mass ratio of the sodium chloride to the sodium bromide is (0.5~1.5):

1.

8. A chemical polishing method, characterized in that: The following steps are involved: The glass to be processed is placed in the polishing liquid as described in any one of claims 1 to 8 to perform chemical polishing treatment; the temperature of the chemical polishing treatment is 420° C. to 520° C.

9. The chemical polishing method according to claim 8, characterized in that: The chemical polishing treatment time is 0.2 h to 5 h.

10. The chemical polishing method according to claim 9, characterized in that: The temperature of the chemical polishing treatment is 420° C. to 500° C.; and / or the time of the chemical polishing treatment is 1 h to 3 h.

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