A semiconductor laser element with a strain-polarity topological layer

Abstract

The present invention discloses a semiconductor laser element with strained polarity topological layers. The element comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A strained polarity topological layer is disposed between the upper waveguide layer and the upper confinement layer. The strained polarity topological layer comprises a first strained polarity topological layer, a second strained polarity topological layer, and a third strained polarity topological layer. The present invention utilizes a specific spontaneous polarization coefficient distribution and a specific Philips ionization degree distribution to generate polarity anti-vortices and polarity topological properties, shielding mechanical losses, reducing the strain polarization effect of the active layer, lowering the hole injection barrier, improving carrier injection uniformity, and increasing the overlap probability of electron-hole wave functions in the active layer. This improves the mode gain of the laser, enhances the confinement factor and gain uniformity, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a strained polarity topological layer. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated emission of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency attenuation Droop effect. 3) Light-emitting diodes The tube spontaneously transitions and radiates incoherent light from high energy level to low energy level without any external influence, while the laser radiates by stimulated transition. The energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating completely coherent light of the photon and the induced photon; 4) Different principles: The light-emitting diode is a diode that generates radiation and recombination light by electron-hole transition to the quantum well or pn junction under the action of external voltage, while the laser needs to meet the lasing conditions before it can be emitted. The carrier inversion distribution in the active area must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, meets the threshold condition so that the gain is greater than the loss, and finally outputs the laser.

[0004] Nitride semiconductor lasers have the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong QCSE quantum confinement Stark effect limits the improvement of the laser's lasing gain. 2) High optical waveguide absorption loss. Intrinsic carbon impurities in p-type semiconductors can compensate for acceptors and destroy the p-type. The low ionization rate of p-type doping and the large amount of unionized Mg acceptor impurities lead to increased internal optical losses. In addition, the laser's refractive index dispersion and confinement factor decrease with increasing wavelength, resulting in a decrease in the laser's mode gain. 3) The leakage of the optical field mode into the substrate forms standing waves, resulting in low substrate mode suppression efficiency and poor far-field image quality. 4) The hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, leading to a severe electron-hole asymmetry mismatch in the quantum well. This leads to electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, uneven carrier injection, uneven gain, a broadened laser gain spectrum, and a decrease in peak gain. Summary of the Invention

[0005] The present invention proposes a semiconductor laser element with a strained polar topological layer. The specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strained polar topological layer generate polar anti-vortex and polar topological characteristics, shielding mechanical losses, reducing the strain polarization effect of the active layer, reducing the hole injection barrier, improving the uniformity of carrier injection, and increasing the overlap probability of the electron-hole wave function in the active layer, thereby increasing the mode gain of the laser, enhancing the confinement factor and gain uniformity, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0006] The present invention provides a semiconductor laser element with a strain polarity topological layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein a strain polarity topological layer is provided between the upper waveguide layer and the upper confinement layer.

[0007] The strained polar topological layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, or any combination thereof;

[0008] The strain polarity topological layer includes a first strain polarity topological layer, a second strain polarity topological layer and a third strain polarity topological layer.

[0009] Preferably, the spontaneous polarization coefficient distribution of the first strain polarity topological layer has a function y1=A+B*ln(x+1) / (x-1) curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer has a function y2=C+D*a x (a>1) curve distribution, the spontaneous polarization coefficient distribution of the third strain polarity topological layer has the function y3=E+F*xe x Curved distribution.

[0010] Preferably, the spontaneous polarization coefficient of the first strained polarity topological layer is d, the spontaneous polarization coefficient of the second strained polarity topological layer is e, and the spontaneous polarization coefficient of the third strained polarity topological layer is f, wherein: f≤d≤e.

[0011] Preferably, the Philips ionization distribution of the first strained polar topological layer has a function y4=G+H*x / e x Curve distribution, the Philips ionization distribution of the second strain polar topological layer has the function y5=I+J*a x (a>1) curve distribution, the Philips ionization degree distribution of the third strain polar topological layer has the function y6=K+L*e x x 2 Second quadrant curve distribution.

[0012] Preferably, the Philips ionization degree of the first strained polar topological layer is g, the Philips ionization degree of the second strained polar topological layer is h, and the Philips ionization degree of the third strained polar topological layer is i, wherein: 0.1≤i≤h≤g≤5.

[0013] Preferably, the piezoelectric polarization coefficient distribution of the first strain polar topological layer has a function y7=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer has the function y8=O+P*a x (0<a<1) curve distribution, the piezoelectric polarization coefficient distribution of the third strain polarity topological layer has the function y9=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer is j, the piezoelectric polarization coefficient of the second strain polarity topological layer is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer is l, wherein: 0.5≤k≤j≤l≤5.

[0014] Preferably, the elastic coefficient distribution of the first strain polarity topological layer has a function y 10 =S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer has the function y 11 =U+V*a x(0<a<1) curve distribution, the elastic coefficient distribution of the third strain polarity topological layer has the function y 12 =W+Z*e x / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer is m, the elastic coefficient of the second strain polarity topological layer is n, and the elastic coefficient of the third strain polarity topological layer is p, wherein: 50GPa≤m≤n≤p≤1000GPa.

[0015] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 ≥ m ≥ 1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The barrier layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 to 200 angstroms.

[0016] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0017] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0018] Compared with the prior art, the semiconductor laser element with a strained polarity topological layer provided by the embodiment of the present invention has the following beneficial effects:

[0019] The specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strain polar topological layer generate polar anti-vortex and polar topological characteristics, shielding mechanical loss, reducing the strain polarization effect of the active layer, reducing the hole injection barrier, improving the uniformity of carrier injection, improving the overlap probability of the electron-hole wave function of the active layer, improving the mode gain of the laser, enhancing the confinement factor and gain uniformity, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0020] The specific piezoelectric polarization coefficient distribution and the specific elastic coefficient distribution of the strain polar topological layer produce a stress-induced birefringence effect, enhance the tunable second harmonic and nonlinear optical properties, regulate the polarization independence of the laser so that the laser propagates along the active layer direction, prevent light leakage to the substrate, suppress the substrate mode, improve the far-field image quality, improve the beam quality factor, confine the internal light field more to the middle of the upper waveguide layer and the lower waveguide layer, reduce internal optical loss, improve the mode gain of the laser, and enhance the confinement factor and gain uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic structural diagram of a semiconductor laser element with a strained polarity topological layer provided by the present invention.

[0022] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser element with a strained polarity topological layer provided by the present invention.

[0023] In the figure, markings are as follows: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: strain-polarity topological layer; 106a: first strain-polarity topological layer; 106b: second strain-polarity topological layer; 106c: third strain-polarity topological layer. DETAILED DESCRIPTION

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0025] In order to solve the above problems, a semiconductor laser element with a strained polarity topological layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1-2 The present invention provides a semiconductor laser element with a strain polarity topological layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A strain polarity topological layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The strained polar topological layer 106 is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, or any combination thereof;

[0028] The strained polarity topological layer 106 includes a first strained polarity topological layer 106 a , a second strained polarity topological layer 106 b , and a third strained polarity topological layer 106 c .

[0029] The spontaneous polarization coefficient distribution of the first strain polarity topological layer (106a) has a function y1=A+B*ln(x+1) / (x-1) curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer (106b) has a function y2=C+D*a x (a>1) curve distribution, the spontaneous polarization coefficient distribution of the third strain polar topological layer (106c) has the function y3=E+F*xe x The first strain polarity topological layer (106a) has a spontaneous polarization coefficient of d, the second strain polarity topological layer (106b) has a spontaneous polarization coefficient of e, and the third strain polarity topological layer (106c) has a spontaneous polarization coefficient of f, wherein: f≤d≤e.

[0030] The Philips ionization distribution of the first strained polar topological layer (106a) has a function y4=G+H*x / e x Curve distribution, the Philips ionization distribution of the second strain polar topological layer (106b) has the function y5=I+J*a x (a>1) curve distribution, the Philips ionization distribution of the third strain polar topological layer (106c) has the function y6=K+L*e x x 2 The second quadrant curve distribution: the Philips ionization degree of the first strain polarity topological layer (106a) is g, the Philips ionization degree of the second strain polarity topological layer (106b) is h, and the Philips ionization degree of the third strain polarity topological layer (106c) is i, wherein: 0.1≤i≤h≤g≤5.

[0031] In summary, the specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strained polar topological layer produce polar anti-vortex and polar topological characteristics, shielding mechanical losses, reducing the strain polarization effect of the active layer, reducing the hole injection barrier, improving the uniformity of carrier injection, and increasing the overlap probability of the electron-hole wave function in the active layer, thereby increasing the mode gain of the laser, enhancing the confinement factor and gain uniformity, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0032] The piezoelectric polarization coefficient distribution of the first strain polar topological layer (106a) has a function y7=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer (106b) has the function y8=O+P*a x (0<a<1) curve distribution, the piezoelectric polarization coefficient distribution of the third strain polarity topological layer (106c) has the function y9=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer (106a) is j, the piezoelectric polarization coefficient of the second strain polarity topological layer (106b) is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer (106c) is l, wherein: 0.5≤k≤j≤l≤5.

[0033] The elastic coefficient distribution of the first strain polarity topological layer (106a) has a function y 10 =S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer (106b) has the function y 11 =U+V*a x (0<a<1) curve distribution, the elastic coefficient distribution of the third strain polarity topological layer (106c) has the function y 12 =W+Z*e x / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer (106a) is m, the elastic coefficient of the second strain polarity topological layer (106b) is n, and the elastic coefficient of the third strain polarity topological layer (106c) is p, wherein: 50GPa≤m≤n≤p≤1000GPa.

[0034] In summary, the specific piezoelectric polarization coefficient distribution and specific elastic coefficient distribution of the strain polar topological layer produce a stress-induced birefringence effect, enhance the tunable second harmonic and nonlinear optical properties, regulate the polarization independence of the laser so that the laser propagates along the active layer direction, prevent light leakage into the substrate, suppress the substrate mode, improve the far-field image quality, improve the beam quality factor, confine the internal light field more to the middle of the upper waveguide layer and the lower waveguide layer, reduce the internal optical loss, improve the mode gain of the laser, and enhance the confinement factor and gain uniformity.

[0035] The following table specifically shows a comparison of data between the conventional laser and the laser of the present invention.

[0036]

[0037] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or any one of the above. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0038] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0039] In the present invention, the substrate 100 is sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0040] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element having a strain polarity topological layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A strain polarity topological layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105), The strained polar topological layer (106) is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, or any combination thereof; The strain polarity topological layer (106) comprises a first strain polarity topological layer (106a), a second strain polarity topological layer (106b) and a third strain polarity topological layer (106c); The spontaneous polarization coefficient distribution of the first strain polarity topological layer (106a) has a function y1=A+B*ln(x+1) / (x-1) curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer (106b) has a function y2=C+D*a x Curve distribution, where a>1, the spontaneous polarization coefficient distribution of the third strain polar topological layer (106c) has the function y3=E+F*xe x Curved distribution.

2. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The spontaneous polarization coefficient of the first strain polarity topological layer (106a) is d, the spontaneous polarization coefficient of the second strain polarity topological layer (106b) is e, and the spontaneous polarization coefficient of the third strain polarity topological layer (106c) is f, wherein: f≤d≤e.

3. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The Philips ionization distribution of the first strained polar topological layer (106a) has a function y4=G+H*x / e x Curve distribution, the Philips ionization distribution of the second strain polar topological layer (106b) has the function y5=I+J*a x Curve distribution, where a>1, the Philips ionization distribution of the third strain polar topological layer (106c) has the function y6=K+L*e x x 2 Second quadrant curve distribution.

4. The semiconductor laser element with a strained polarity topological layer according to claim 3, characterized in that: The Philips ionization degree of the first strained polar topological layer (106a) is g, the Philips ionization degree of the second strained polar topological layer (106b) is h, and the Philips ionization degree of the third strained polar topological layer (106c) is i, wherein: 0.1≤i≤h≤g≤5.

5. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The piezoelectric polarization coefficient distribution of the first strain polar topological layer (106a) has a function y7=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer (106b) has the function y8=O+P*a x Curve distribution, where 0<a<1, the piezoelectric polarization coefficient distribution of the third strain polar topological layer (106c) has the function y9=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer (106a) is j, the piezoelectric polarization coefficient of the second strain polarity topological layer (106b) is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer (106c) is l, wherein: 0.5≤k≤j≤l≤5.

6. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The elastic coefficient distribution of the first strain polarity topological layer (106a) has a function y 10 =S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer (106b) has the function y 11 =U+V*a x Curve distribution, where 0<a<1, the elastic coefficient distribution of the third strain polarity topological layer (106c) has a function y 12 =W+Z*e x / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer (106a) is m, the elastic coefficient of the second strain polarity topological layer (106b) is n, and the elastic coefficient of the third strain polarity topological layer (106c) is p, wherein: 50≤m≤n≤p≤1000, the unit is GPa.

7. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond The barrier layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 to 200 angstroms.

8. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, or any combination thereof.

9. The semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

Images