Semiconductor process chamber and process suite thereof
By designing the split lining structure and the lifting base in the semiconductor process chamber, the problem of small adjustable base height in the prior art is solved, and adjustable and effective protection of larger heights is achieved.
Patent Information
- Application Number
- CN202311577266.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-23
- Publication Date
- 2025-05-23
AI Technical Summary
In the prior art, the adjustable range of base height is small, making it difficult to meet different process requirements.
A process kit of semiconductor process chamber is designed, including guards, shielding mechanisms and support mechanisms, and an adjustable range of base height is increased by the cooperation of the second liner with the split structure of the first liner and the lifting base.
A larger adjustable range of lifting base height is achieved, more process requirements are met, while maintaining effective protection of the chamber.
Smart Images
Figure CN120026287A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process chamber and a process kit thereof. Background Art
[0002] In the process of integrated circuit manufacturing, different processing flows use different processes. Physical vapor deposition (PVD) coating technology is widely used for coating silicon wafer surfaces in the integrated circuit manufacturing process. PVD coating technology often uses sputtering technology to prepare thin films. Sputtering technology uses ions to bombard the surface of the target material to knock out atoms on the surface of the target material, and the knocked-out atoms are deposited on the surface of the silicon wafer to form a thin film. By selecting the target material of the corresponding material according to the coating material, the coating process of different metals can be achieved. When using the sputtering coating processing method, the atoms on the surface of the target material that are knocked out will contaminate the parts around the silicon wafer. A protective structure is required to isolate and protect the sputtering environment to ensure that other areas are not contaminated. The protective structure includes an inner liner fixed to the chamber and a pressure ring overlapped on the base. The sputtering environment is protected by the cooperation between the inner liner and the pressure ring.
[0003] During the process, different process positions are often required to meet different process requirements (such as thickness uniformity, resistance uniformity, etc.), so the height of the pedestal needs to be adjusted to change the distance between the pedestal and the target. However, the adjustable range of the pedestal height is relatively small due to the limitation of the protective structure in the prior art.
[0004] Therefore, how to increase the adjustable range of the base height is a technical problem that technicians in this field urgently need to solve. Summary of the invention
[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber and a process kit thereof, wherein the second lining can be raised in conjunction with a lifting base, thereby increasing the adjustable range of the base height.
[0006] In order to achieve the purpose of the present application, a process kit is provided, which is applied to a semiconductor chamber, including a protective member, a shielding mechanism and a supporting mechanism, wherein:
[0007] The protective member is used to fix the lifting base arranged in the semiconductor chamber;
[0008] The shielding mechanism comprises a first liner and a second liner, wherein the first liner is used to be fixedly connected to the cavity of the semiconductor chamber, one end of the second liner is at least partially overlapped with the first liner, and the other end of the second liner is matched with the protective element;
[0009] The supporting mechanism is used to be fixedly connected to the base and to support the second lining, and when supporting the second lining, it drives the second lining to rise and fall so as to change the overlapping area between the second lining and the first lining.
[0010] In some embodiments, the shielding mechanism also includes a third lining and a lining connector, the first lining and the third lining are spaced apart, the upper end of the first lining and the upper end of the third lining are connected through the lining connector, a sealing groove is formed between the first lining and the third lining, and the upper end of the second lining penetrates into the sealing groove.
[0011] In some embodiments, the second liner includes a first protective cylinder, a second protective cylinder and a connecting ring, the lower end of the first protective cylinder and the lower end of the second protective cylinder are respectively connected to the outer ring and the inner ring of the connecting ring, the supporting mechanism is used to support the connecting ring, the second protective cylinder is used to cooperate with the protective member, and the first protective cylinder is at least partially overlapped on the inner circumferential surface of the first liner.
[0012] In some embodiments, the third lining is located on the inner side of the first lining, the inner diameter of the lining connector gradually increases from bottom to top, and the upper end of the lining connector is connected to the first lining.
[0013] In some embodiments, a first flange is provided at the lower end of the inner circumference of the first liner, and a second flange is provided at the upper end of the outer circumference of the second liner, and the first flange is used to support the second liner when the lifting base descends to the point where the supporting mechanism is away from the second liner.
[0014] In some embodiments, the supporting mechanism includes a connecting portion and a supporting portion, the connecting portion is used to be connected to the lifting base, the supporting portion is connected to the lower end of the connecting portion, and the supporting portion is used to support the second lining.
[0015] In some embodiments, the support mechanism further includes an elastic support component, wherein the elastic support component is disposed on the support portion, and an elastic force limit of the elastic support component is greater than a gravity of the second lining.
[0016] In some embodiments, the support portion is a support ring, and the support ring is provided with a through hole therethrough, and the through hole is used for gas discharge.
[0017] In some embodiments, the elastic support assembly includes a tubular elastic member, a side wall of the tubular elastic member is connected and fixedly connected to the support portion, and the side wall of the tubular elastic member facing away from the support portion is used to support the second lining.
[0018] In some embodiments, the elastic support assembly includes a support bolt, a support nut and a support spring, the support portion has a through hole, the support bolt is inserted into the through hole, the support nut is located below the support portion and connected to the support bolt; the support spring is sleeved on the outer periphery of the screw rod of the support bolt and is located between the nut of the support bolt and the support portion.
[0019] The present application also provides a semiconductor process chamber, comprising a cavity, a base arranged in the cavity, and any one of the process kits described above, wherein the lifting base is used to support the wafer, and the second lining is driven to rise and fall through the supporting mechanism, and the shielding mechanism is used to cooperate with the protective member to protect the cavity.
[0020] This application has the following beneficial effects:
[0021] The process kit provided in the present application is applied to a semiconductor process chamber, and includes a protective member, a shielding mechanism and a supporting mechanism, wherein: the protective member is used to fix a lifting base set on the semiconductor chamber; the shielding mechanism includes a first liner and a second liner, the first liner is used to be fixedly connected to the cavity body of the semiconductor chamber, one end of the second liner is at least partially overlapped with the first liner, and the other end of the second liner cooperates with the protective member; the supporting mechanism is used to be fixedly connected to the base, and is used to support the second liner, and when supporting the second liner, it drives the second liner to rise and fall to change the overlapping area between the second liner and the first liner.
[0022] The first liner and the second liner adopt a split structure. The lifting base can drive the second liner to rise through the support mechanism. During the rising process, the second liner cooperates with the first liner and the protective room to protect the cavity. On the basis of ensuring the protection effect, the height that the lifting base can rise is increased, thereby increasing the adjustable range of the lifting base height. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 This is a schematic diagram of the structure of a process kit in a specific implementation manner of the present application;
[0024] Figure 2 for Figure 1 A schematic diagram of the structure of the lifting base of the middle process kit in the lowest process position;
[0025] Figure 3 for Figure 1 A schematic diagram of the structure of the lifting base of the middle process kit in the middle process position;
[0026] Figure 4 for Figure 1 A schematic diagram of the structure of the lifting base of the middle process kit in the highest process position;
[0027] Figure 5 for Figure 1 A schematic diagram of the structure of the lifting base of the process kit in the transfer position;
[0028] Figure 6 for Figure 1 A top view of a specific implementation of the middle support mechanism;
[0029] Figure 7 for Figure 6 A partial cross-sectional view of the middle support mechanism;
[0030] Figure 8 for Figure 1 A top view of another specific implementation of the middle support mechanism;
[0031] Fig. 9 for Figure 8 A partial cross-sectional view of the middle support mechanism;
[0032] Fig.10 It is a structural schematic diagram of a specific implementation method of the elastic support component;
[0033] Fig.11 It is a structural schematic diagram of another specific implementation method of the elastic support component;
[0034] Fig.12 The present invention is a structural schematic diagram of a specific implementation of semiconductor process equipment. DETAILED DESCRIPTION
[0035] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process chamber and process kit provided by the present application are described in detail below in conjunction with the accompanying drawings.
[0036] The process kit provided in this application is applied to a semiconductor process chamber. Figure 1 As shown, the process kit includes a protective member 300, a shielding mechanism 200 and a supporting mechanism 400. The semiconductor process chamber includes a cavity 600 and a lifting base 100 disposed in the cavity 600. The lifting base 100 is used to support the wafer and drive the wafer to rise and fall. A target 500 can be set on the top of the semiconductor process chamber. The semiconductor process chamber applies voltage to the target 500 through a sputtering power supply. The cavity 600 of the semiconductor process chamber is grounded. The target 500 forms a bias relative to the cavity 600, so that the process gas in the cavity 600 generates plasma. The target 500 attracts plasma to bombard its surface, so that the target atoms escape from the surface of the target 500 and are deposited on the wafer.
[0037] The support mechanism 400 and the protective member 300 are both arranged around the lifting base 100. The support mechanism 400 is connected to the lifting base 100, and the protective member 300 overlaps the edge of the upper surface of the lifting base 100. When the wafer is placed on the lifting base 100, the wafer is located on the inner side of the protective member 300. The shielding mechanism 200 is used to cooperate with the protective member 300 to protect the cavity 600 of the semiconductor process chamber. The shielding mechanism 200, the protective member 300 and the lifting base 100 form a protective cavity under the target material 500, isolating the inner wall of the cavity 600 from the target material 500. During the process, the sputtered target atoms will fall on the surface of the shielding mechanism 200, the protective member 300 or the wafer, preventing them from falling on the inner wall of the cavity 600, thereby playing the role of protecting the cavity 600.
[0038] The shielding mechanism 200 includes a first liner 210 and a second liner 220 arranged around the lifting base 100. The first liner 210 may be cylindrical and used to be connected to the cavity 600. The second liner 220 is at least partially superimposed on the outer circumference or inner circumference of the first liner 210, that is, in the direction perpendicular to the axial direction of the first liner 210, the second liner 220 and the first liner 210 are at least partially overlapped. The overlapping part of the first liner 210 and the second liner 220 forms an overlapping area around the lifting base 100, and the sputtered atoms cannot pass through the overlapping area, thereby preventing the sputtered atoms from passing between the first liner 210 and the second liner 220 and being deposited on the inner wall of the cavity 600. The lifting base 100 supports the second liner 220 through the support mechanism 400, and drives the second liner 220 to rise and fall. During the lifting process, the relative position of the second liner 220 and the protective member 300 can remain unchanged, so that the second liner 220 always keeps in cooperation with the protective member 300. The overlapping area of the second liner 220 and the first liner 210 will continue to increase, preventing sputtered atoms from passing through the shielding mechanism 200 , thereby effectively protecting the inner wall of the chamber 600 .
[0039] Optionally, the top end of the first liner 210 has a mounting ring 211 extending radially outward, and the mounting ring 211 can be used to connect to the cavity 600. Of course, the user can also use other methods to connect the first liner 210 to the cavity 600, which is not limited here.
[0040] In this embodiment, the first lining 210 and the second lining 220 of the shielding mechanism 200 adopt a split structure, and the second lining 220 at least partially overlaps with the first lining 210. The second lining 220 can rise under the drive of the lifting base 100, increasing the rising space of the lifting base 100. Compared with the prior art, the height of the lifting base 100 has a larger adjustable range, which can enable the semiconductor process equipment to meet more process requirements.
[0041] In some embodiments, the second liner 220 is partially overlapped on the inner circumference of the first liner 210. Figure 1 As shown, the first liner 210 is sleeved on the outer periphery of the second liner 220. The second liner 220 includes a first protective tube 221, a second protective tube 223 and a connecting ring 222. Figure 1 As shown, the lower end of the first protective tube 221 and the lower end of the second protective tube 223 are respectively connected to the outer ring and the inner ring of the connecting ring 222. The first protective tube 221 at least partially penetrates the inner side of the first liner 210, the second protective tube 223 is used to cooperate with the protective member 300, and the supporting mechanism 400 is used to support the connecting ring 222.
[0042] Optionally, the protective member 300 has a protective groove 310 opening downward, and the protective groove 310 is arranged around the axis of the lifting base 100. The upper end of the second protective tube 223 can be inserted into the protective groove 310 to form a labyrinth seal with the protective groove 310 to prevent the sputtered atoms from escaping. Specifically, when the support mechanism 400 supports the second liner 220, the upper end of the second protective tube 223 should at least be flush with the opening of the protective groove 310 to avoid forming a through gap that causes the sputtered atoms to escape. The second protective tube 223 usually partially penetrates into the protective groove 310 when the support mechanism 400 supports the second liner 220 to ensure the protective effect.
[0043] Optionally, the first liner 210, the second liner 220 and the support mechanism 400 are all made of conductive materials. The shielding assembly can confine the plasma inside it to prevent the plasma from contacting the cavity 600 and causing damage to the cavity 600. The first liner 210 is connected to the cavity 600, and the cavity 600 can be grounded, and the two are at zero potential. The second liner 220 is connected to the lifting base 100 through the support mechanism 400, and the lifting base 100 can be grounded, and the second liner 220 is also at zero potential. The first liner 210 and the second liner 220 have the same potential, which can prevent electric sparks from being generated between the two due to the potential difference.
[0044] Furthermore, the outer wall of the first lining 210 and the outer wall of the second lining 220 are electrically connected via a conductive structure such as a wire, thereby ensuring that the first lining 210 and the second lining 220 are always at the same potential, thereby avoiding electric sparks therebetween.
[0045] Optionally, both the first lining 210 and the second lining 220 have flange structures, and the flange structures cooperate with each other to achieve the overlap of the first lining 210 and the second lining 220. During the lifting and lowering process of the lifting base 100, the second lining 220 can be lifted and lowered together. Exemplarily, the second protective cylinder 223 partially penetrates into the protective groove 310 when the supporting mechanism 400 supports the second lining 220, and the upper end of the second protective cylinder 223 can be a preset distance away from the bottom of the protective groove 310. As the lifting base 100 descends, the protective member 300 and the second lining 220 descend together. When the lifting base 100 descends to a certain height, the first lining 210 and the second lining 220 overlap and cooperate, and the weight of the second lining 220 is borne by the first lining 210. The lifting base 100 continues to descend a preset distance, the position of the second lining 220 remains unchanged, and the protective member 300 descends with the lifting base by a preset distance. Figure 2 As shown, at this time, the upper end of the second protective tube 223 is in contact with the bottom of the protective groove 310, and the lifting base 100 is in the lowest process position.
[0046] like Figure 3 As shown, the lifting base 100 rises from the lowest process position to a preset distance, and the protective member 300 rises accordingly to a preset distance, and the weight of the protective lining can be borne by the supporting mechanism 400. At this time, the lifting base 100 is in the middle process position. Figure 3 The intermediate process position shown is usually the maximum height that the base can reach in the prior art. In the present application, the lifting base 100 can continue to rise, increasing the overlapping area of the second liner 220 and the first liner 210, so the height adjustable range of the lifting base 100 in the present application is larger.
[0047] It should be noted that Figure 3 In the embodiment shown, the upper end of the second protective tube 223 is flush with the opening of the protective groove 310 . This embodiment is an extreme case. To ensure the protective effect, the second protective tube 223 is usually partially inserted into the protective groove 310 .
[0048] The lifting base 100 continues to rise, and drives the second lining 220 to rise through the supporting mechanism 400, and the overlap between the second lining 220 and the first lining 210 increases. Figure 4 As shown, when the lifting base 100 rises to a preset height, it reaches the highest process position. Figure 3 The intermediate process shown is Figure 4 The height between the highest process positions shown is the height adjustment range of the lifting base 100 increased in the present application compared with the prior art.
[0049] In addition, before and after the process, the semiconductor process chamber needs to perform a wafer transfer operation, that is, taking out the wafers that have completed the process and placing the wafers to be processed. During the wafer transfer process, the lifting base 100 descends to the lowest process position and continues to move downward. Figure 5 As shown, the lifting base 100 descends to the transfer station, and the second liner 220 supports the protective member 300 so that it is located above the transfer station to prevent it from interfering with the wafer transfer. After the wafer transfer operation is completed, the lifting base 100 drives the wafer to rise to the appropriate process position for processing.
[0050] In some embodiments, a first flange 212 is provided at the lower end of the inner circumference of the first liner 210, and a second flange 224 is provided at the upper end of the outer circumference of the second liner 220. The first flange 212 is used to support the second liner 220 when the lifting base 100 descends to the point where the supporting mechanism 400 is away from the second liner 220. The first flange 212 and the second flange 224 can both be annular structural members, and the two annular structural members can be connected to the first liner 210 and the second liner 220 respectively by screw connection or welding. The first liner 210 and the second liner 220 can overlap and cooperate to support the second liner 220. Of course, the first flange 212 and the second flange 224 can also adopt other structures, for example, the first flange 212 and the second flange 224 are multiple protrusion structures respectively arranged along the circumference of the first liner 210 and the circumference of the first protective cylinder 221, which is not limited here.
[0051] in addition, Figure 2 In the specific embodiment shown, the second flange 224 is located inside the first liner 210, and the outer diameter of the second flange 224 can be smaller than the inner diameter of the first liner 210 to prevent the second flange 224 from rubbing against the first liner 210 during the lifting process to generate particles. Accordingly, the inner diameter of the first flange 212 can be larger than the outer diameter of the first protective tube 221 to prevent the friction between the two to generate particles. The inner diameter of the first flange 212 is smaller than the outer diameter of the second flange 224, so that the two can overlap and fit.
[0052] In some embodiments, the shielding mechanism 200 further includes a third liner 230 and a liner connector 231, and the third liner 230 is arranged around the interior of the cavity 600. The first liner 210 and the third liner 230 are arranged at intervals, and the upper end of the first liner 210 and the upper end of the third liner 230 are connected by the liner connector 231, so that a sealing groove 240 is formed between the first liner 210 and the third liner 230, and the upper end of the second liner 220 penetrates into the sealing groove 240. A labyrinth seal is formed between the second liner 220 and the sealing groove 240. During the process, the gas in the cavity 600 can pass through the gap between the second liner 220 and the sealing groove 240 to enter between the cavity 600 and the shielding mechanism 200, and finally be discharged from the exhaust hole 601 of the cavity 600. The gas may include process gas, and may also include reaction products generated after the process gas reacts. After the labyrinth seal is formed between the second liner 220 and the sealing groove 240, the gas needs to pass through the labyrinth seal to be discharged. Since the gas may carry sputtered atoms, the process seal can extend the gas exhaust path and slow down the gas flow rate, thereby separating the sputtered atoms from the gas, preventing the gas from carrying the sputtered atoms out, and improving the protection performance of the shielding mechanism 200. Of course, the structure of the shielding mechanism 200 is not limited to this. For example, the third liner 230 can also be arranged on the periphery of the second liner 220 to form a sealing groove 240 with the second liner 220, and the lower end of the first liner 210 penetrates into the sealing groove 240, which is not limited here.
[0053] During the process, target atoms are deposited on the inner surface of the shielding mechanism 200 . The larger the space surrounded by the inner surface of the shielding mechanism 200 , the more target atoms the shielding mechanism 200 can accommodate.
[0054] In some embodiments, the third liner 230 is located inside the first liner 210. The inner diameter of the liner connector 231 gradually increases from bottom to top, and the upper end of the liner connector 231 is connected to the first liner 210. Figure 1As shown, the inner surfaces of the third liner 230 and the liner connector 231 face the inside of the cavity 600, and the target atoms will be deposited on the inner surfaces of the third liner 230 and the liner connector 231. The liner connector 231 is conical, and the inner diameter of the liner connector 231 gradually increases from bottom to top, so the space inside the liner connector 231 increases, thereby increasing the capacity of the shielding mechanism 200 to accommodate target atoms and extending the service life of the shielding mechanism 200. The height of the liner connector 231 can be set as needed to avoid friction with the second liner 220. Exemplarily, the generatrix of the liner connector 231 can be arc-shaped. Specifically, the speed of increasing the inner diameter of the liner connector 231 gradually decreases from bottom to top, thereby increasing the space inside the liner connector 231, so that the liner connector 231 can receive more sputtered atoms, while reducing the generation of particles during the deposition process and preventing the particles from falling. The user can also set the shape of the liner connector 231 as needed, which is not limited here.
[0055] In some embodiments, the support mechanism 400 includes a connection part and a support part. The lifting base 100 includes a base body 101 and a lifting shaft 102, the connection part is arranged around the base body 101, and the support part is arranged around the lifting shaft 102. The connection part can be connected to the base body 101, and the support part is connected to the lower end of the connection part, and is used to support the connection ring 222 of the second liner 220.
[0056] Optionally, the connecting portion is a connecting tube 402, and the supporting portion is a supporting ring 401. Figures 5 to 7 As shown, the inner ring of the support ring 401 is connected to the lower end of the connecting tube 402, and the support ring 401 extends outward along the radial direction of the connecting tube 402. The inner diameter of the support ring 401 is smaller than the outer diameter of the second protective tube 223, so that the support ring 401 can fit the lower surface of the connecting ring 222 of the second liner 220 and support the connecting ring 222.
[0057] Optionally, the support mechanism 400 further includes a fixing ring 403, the outer ring of which is connected to the upper end of the connecting tube 402. Figure 7 As shown, the cross-sectional view of one side of the support mechanism 400 is Z-shaped. The inner diameter of the fixing ring 403 is smaller than the diameter of the base body 101. The fixing ring 403 is fixedly connected to the lower surface of the base body 101, thereby fixing the support mechanism 400 on the lifting base 100. Of course, the support mechanism 400 can also be connected to the lifting base 100 in other ways. For example, the support mechanism 400 may not be provided with the fixing ring 403, but may be directly fixedly connected to the outer peripheral surface of the base body 101 through the connecting tube 402, which is not limited here.
[0058] Optionally, the support ring 401 is provided with a through hole. Since the support ring 401 needs to fit the connecting ring 222 of the second liner 220, the second liner 220 is supported. When the support ring 401 fits the connecting ring 222, a certain sealing effect will be produced, which affects the gas discharge in the cavity 600. The support ring 401 is provided with a through hole to facilitate gas discharge. The number of through holes can be multiple, and they are evenly distributed along the circumference of the support ring 401, so that the gas is evenly discharged, and the uniformity of the process gas distribution in the cavity 600 is improved.
[0059] In some embodiments, Figure 8 and Fig. 9 As shown, the supporting part is a supporting plate 404, and the connecting part is a connecting plate 405. The connecting plate 405 is arranged parallel to the axial direction of the lifting base 100. The supporting plate 404 is connected to the lower end of the connecting plate 405 and extends in a direction perpendicular to the connecting plate 405 away from the lifting shaft 102. The supporting plate 404 is used to fit and support the second liner 220. A plurality of supporting plates 404 are evenly distributed along the circumference of the base body 101 to provide uniform support force for the second liner 220.
[0060] Optionally, the support mechanism 400 further includes a fixing plate 406, which is vertically connected to the connecting plate 405 and connected to the upper end of the connecting plate 405. Fig. 9 As shown, the support plate 404 is in a Z shape, and the fixing plate 406 is used to be fixedly connected to the lower surface of the base body 101. Of course, the support plate 404 can also be connected to the base body 101 in other ways. For example, the support plate 404 may not be provided with the fixing plate 406, but directly fixedly connected to the outer peripheral surface of the base body 101 through the connecting plate 405, which is not limited here.
[0061] In some embodiments, the support mechanism 400 further includes an elastic support component 410, which is disposed on the upper surface of the support portion. The support portion supports the connecting ring 222 through the elastic support component 410, thereby preventing the support portion from directly contacting the connecting ring 222 of the second liner 220, thereby preventing friction between the support portion and the connecting ring 222, and further preventing the generation of particles. Therefore, the elastic force limit of the elastic support component 410 is greater than the gravity of the second liner 220. The elastic force limit of the elastic support component 410 is the maximum elastic force that the elastic support component 410 can generate within its elastic limit. Figure 2 As shown, when the lifting base 100 is in the lowest process position, the elastic support component 410 can be in a natural extension state, and the support force of the elastic support component 410 on the second liner 220 is zero. Figure 2At the process position shown, the elastic support assembly 410 may also be in a compressed state, but at this time the elastic force of the elastic support assembly 410 is less than the gravity of the second liner 220. The lifting base 100 continues to rise, and the elastic support assembly 410 is compressed to generate a supporting force to support the second liner 220. The lifting base 100 reaches Figure 3 In the intermediate process position shown, the elastic support component 410 generates elastic deformation, and the elastic force of the elastic support component is equal to the gravity of the second liner 220 . The lifting base 100 continues to rise to push the second flange 224 away from the first flange 212 .
[0062] Optional, in Fig.10 In the specific embodiment shown, the elastic support assembly 410 includes a tubular elastic member 411. The side wall of the tubular elastic member 411 is connected and fixedly connected to the support portion, and the side wall of the tubular elastic member 411 facing away from the support portion is used to fit and support the second liner 220. The tubular elastic member 411 can be fixedly connected to the support portion by screws. In order to improve the reliability of the connection and avoid stress concentration, the elastic support assembly 410 also includes a pressing plate 412, which is arranged on the inner side of the tubular elastic member 411, and the screws pass through the pressing plate 412 and the side wall of the tubular elastic member 411 in turn and are connected to the support portion. The pressing plate 412 can withstand the bolt preload of the screw and apply pressure to the inner wall of the tubular elastic member 411, thereby increasing the force area of the tubular elastic member 411, avoiding damage to the tubular elastic member 411 caused by stress concentration, and extending the service life of the elastic support assembly 410.
[0063] Optional, in Fig.11 In the specific embodiment shown, the elastic support assembly 410 includes a support bolt 413, a support nut 415 and a support spring 414. The support portion has a through hole extending in the axial direction. The support bolt 413 is inserted into the through hole. The support nut 415 is located below the support portion and connected to the support bolt 413. The support spring 414 is sleeved on the outer periphery of the screw rod of the support bolt 413 and is located between the nut of the support bolt 413 and the support portion. The elastic force of the support spring 414 can make the support nut 415 fit the support portion through the support nut. When the lifting base 100 drives the second liner 220 to rise, the support bolt 413 contacts the second liner 220 and moves downward under the gravity of the second liner 220, thereby compressing the support elastic yellow, and the support spring 414 produces elastic deformation. The elastic force is balanced with the gravity of the second liner 220, and the second liner 220 is supported. In this specific embodiment, the number of the elastic support components 410 is usually more than 3, and the elastic support components 410 are evenly distributed along the periphery of the lifting base 100, thereby providing uniform support force for the second lining 220.
[0064] The present application also provides a semiconductor process chamber, such as Fig.12As shown, it includes a chamber 600, a lifting base 100 and a process kit in any of the above embodiments. The lifting base 100 is used to support the wafer, drive the wafer to rise and fall in the chamber 600, and drive the second liner to rise and fall through the supporting mechanism. The shielding mechanism 200 is used to cooperate with the protective member 300 to protect the chamber 600. A target material 500 is provided on the top of the semiconductor process chamber. The semiconductor process chamber applies voltage to the target material 500 through a sputtering power supply. The chamber 600 and the lifting base 100 of the semiconductor process chamber are both grounded. The target material 500 forms a bias relative to the chamber 600, so that the process gas in the chamber 600 generates plasma. The target material 500 attracts plasma to bombard its surface, so that the target material atoms escape from the surface of the target material 500 and are deposited on the wafer. Excess target material atoms are deposited on the surface of the shielding mechanism 200 and the protective member 300 to prevent the target material atoms from being deposited on the inner wall of the chamber 600. An exhaust hole 601 is provided at the bottom of the cavity 600 . The gas generated during the process passes through the gap between the first liner 210 and the second liner 220 , and the gap between the shielding mechanism 200 and the protective component, enters the bottom of the cavity 600 , and is discharged from the exhaust hole 601 .
[0065] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.
Claims
1. A process kit for use in a semiconductor chamber, It is characterized in that It includes a protective member, a shielding mechanism and a supporting mechanism, wherein: The protective member is used to fix the lifting base arranged in the semiconductor chamber; The shielding mechanism comprises a first liner and a second liner, wherein the first liner is used to be fixedly connected to the cavity of the semiconductor chamber, one end of the second liner is at least partially overlapped with the first liner, and the other end of the second liner is matched with the protective element; The supporting mechanism is used to be fixedly connected to the base and to support the second lining, and when supporting the second lining, it drives the second lining to rise and fall so as to change the overlapping area between the second lining and the first lining.
2. The process kit according to claim 1, It is characterized in that The shielding mechanism also includes a third lining and a lining connector. The first lining is spaced apart from the third lining. The upper end of the first lining and the upper end of the third lining are connected to the third lining through the lining connector. A sealing groove is formed between the first lining and the third lining, and the upper end of the second lining penetrates into the sealing groove.
3. The process kit according to claim 2, It is characterized in that The second liner includes a first protective tube, a second protective tube and a connecting ring. The lower end of the first protective tube and the lower end of the second protective tube are respectively connected to the outer ring and the inner ring of the connecting ring. The supporting mechanism is used to support the connecting ring. The second protective tube is used to cooperate with the protective member. The first protective tube is at least partially overlapped on the inner circumferential surface of the first liner.
4. The process kit according to claim 2, It is characterized in that The third lining is located on the inner side of the first lining, the inner diameter of the lining connector gradually increases from bottom to top, and the upper end of the lining connector is connected to the first lining.
5. The process kit according to claim 1, It is characterized in that A first flange is provided at the lower end of the inner circumference of the first liner, and a second flange is provided at the upper end of the outer circumference of the second liner. The first flange is used to support the second liner when the lifting base descends until the supporting mechanism is away from the second liner.
6. The process kit according to any one of claims 1 to 5, It is characterized in that The supporting mechanism includes a connecting portion and a supporting portion, wherein the connecting portion is used to be connected to the lifting base, the supporting portion is connected to the lower end of the connecting portion, and the supporting portion is used to support the second lining.
7. The process kit according to claim 6, It is characterized in that The support mechanism further includes an elastic support component, which is disposed on the support portion, and an elastic force limit of the elastic support component is greater than the gravity of the second liner.
8. The process kit according to claim 6, It is characterized in that The support portion is a support ring, and the support ring is provided with a through hole, and the through hole is used for gas discharge.
9. The process kit according to claim 7, It is characterized in that The elastic support assembly includes a tubular elastic member, a side wall of the tubular elastic member is connected and fixedly connected to the support portion, and the side wall of the tubular elastic member facing away from the support portion is used to support the second liner.
10. The process kit according to claim 7, It is characterized in that The elastic support assembly includes a support bolt, a support nut and a support spring. The support portion has a through hole, the support bolt is inserted into the through hole, the support nut is located below the support portion and connected to the support bolt; the support spring is sleeved on the outer periphery of the screw rod of the support bolt and is located between the nut of the support bolt and the support portion.
11. A semiconductor process chamber, It is characterized in that It includes a cavity, a base arranged in the cavity, and a process kit as described in any one of claims 1 to 10, the lifting base is used to support the wafer, and the second lining is driven to rise and fall through the supporting mechanism, and the shielding mechanism is used to cooperate with the protective member to protect the cavity.