Semi-buried ceramic copper-clad carrier plate for IGBT (Insulated Gate Bipolar Translator) device, manufacturing method and assembled product

Abstract

The invention discloses a semi-buried ceramic copper-clad carrier plate for an IGBT (Insulated Gate Bipolar Translator) device, a manufacturing method and an assembly product, relates to the technical field of IGBT devices, and can solve the problems that the current packaging is not reliable enough, and the overall flatness and heat dissipation performance of a chip are not excellent enough. The manufacturing method of the semi-buried ceramic copper-clad carrier plate for the IGBT device in the embodiment of the invention comprises the following steps: S1, covering the surface of a copper carrier plate main body with an anti-corrosion blue film; s2, punching a mounting etching film hole array and a stress transition etching film hole array in a preset mounting etching area and a preset stress transition etching area of the anti-corrosion blue film; the stress transition etching region is distributed on the peripheral side of the mounting etching region; the total proportion of the hole area of the mounting etching film hole array is greater than the total proportion of the hole area of the stress transition etching film hole array; s3, performing chemical etching to form a mounting groove positioned below the mounting etching region and a stress transition structure positioned below the stress transition etching region; the stress transition structure is distributed on the peripheral side of the mounting groove.

Description

Technical Field

[0001] The invention relates to the technical field of IGBT devices, and in particular to a semi-buried ceramic copper-clad carrier board for IGBT devices, a manufacturing method and an assembled product. Background Art

[0002] Ceramic copper clad substrates are special materials that combine ceramic substrates and copper foil. They are widely used in the manufacture of electronic components due to their excellent heat dissipation, mechanical strength, conductivity and electrical connection properties, as well as high insulation and large current carrying capacity.

[0003] As a three-terminal semiconductor switching device, IGBT devices are widely used for efficient and fast switching in a variety of electronic devices. IGBT devices are usually welded on the surface of a ceramic copper-clad substrate. However, when welding IGBT devices, ink solder resist is generally required to prevent chip offset. The package is not reliable enough, and the overall flatness and heat dissipation performance of the chip are not good enough.

[0004] Therefore, the inventor has designed a semi-buried ceramic copper-clad substrate for IGBT devices, a manufacturing method and an assembled product to solve one or more of the above problems, and thus proposed the present application. Summary of the invention

[0005] The purpose of this application is to provide a semi-buried ceramic copper-clad substrate for IGBT devices, a manufacturing method and an assembled product, to solve the current problems of unreliable packaging and insufficient flatness and heat dissipation performance of the chip as a whole.

[0006] In order to solve the above technical problems, the present invention adopts the following solutions: In a first aspect, the present application provides a method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device, which specifically comprises the following steps: S1, coating: coating the surface of the copper carrier body with an anti-corrosion blue film to obtain a copper carrier body with the surface covered with the anti-corrosion blue film; S2. Punching film holes: Punching the installation etching film hole array and the stress transition etching film hole array in the preset installation etching area and stress transition etching area of ​​the anti-corrosion blue film by using film or laser direct writing; The stress transition etching area is distributed around the mounting etching area; The total hole area ratio of the installation etching film hole array is greater than the total hole area ratio of the stress transition etching film hole array; S3, chemical etching: chemical etching is performed through the installation etching film hole array and the stress transition etching film hole array to form an installation groove located below the installation etching area and a stress transition structure located below the stress transition etching area; The stress transition structure is distributed around the installation groove.

[0007] Optionally, the method further includes the following steps: S4, bottom trimming: trimming the bottom of the installation groove by using a laser until the bottom of the installation groove reaches a set flatness range; Before S4, it also includes the following steps: S40: Scan and detect the depth of each position at the bottom of the installation groove, and calculate the bottom repair depth of each position in real time according to the set depth.

[0008] Optionally, in S2, the shapes of the installation etching area and the stress transition etching area are rectangular and U-shaped respectively, and the installation etching film hole array and the stress transition etching film hole array in the two areas are respectively rectangular and U-shaped; and the size and shape of the single etching film holes of the installation etching film hole array and the stress transition etching film hole array are the same, and the shapes are both circular or regular polygonal; The holes in the installation etching film hole array are evenly distributed and the distribution density is greater than the distribution density of the etching film holes in the return stress transition etching area; The hole distribution density of the stress transition etching film hole array gradually increases toward the direction close to the installation etching film hole array.

[0009] Optionally, in S2, the shape of the installation etching area is rectangular, the installation etching film hole array in the area is a corresponding rectangular array, and the shape of the etching film holes of the installation etching film hole array is circular or regular polygonal; The stress transition etching zone has a U-shaped shape, and the shapes of several etching film holes of the stress transition etching film hole array are all long strips and distributed in a U-shaped shape.

[0010] Optionally, a solder resist area is provided between the stress transition etching area and the installation etching area, and in S3, a solder resist hole needs to be etched in the solder resist area; The bottom height of the solder resist hole is lower than the bottom height of the mounting groove.

[0011] In a second aspect, the present application provides a semi-buried ceramic copper-clad carrier for an IGBT device, which is manufactured by the above-mentioned method for manufacturing a semi-buried ceramic copper-clad carrier for an IGBT device, and includes a copper carrier body; The copper carrier body is provided with a mounting groove and a stress transition structure for avoiding stress concentration, and the stress transition structure is distributed around the mounting groove.

[0012] Optionally, a solder resist area is further provided between the stress transition structure and the mounting groove, and a plurality of solder resist holes having a bottom height lower than a bottom height of the mounting groove and being evenly distributed are distributed in the solder resist area.

[0013] Optionally, the stress transition structure is in the shape of a U-shape, and four side surfaces of the U-shaped stress transition structure are all slope structures inclined downward.

[0014] Optionally, the stress transition structure is in the shape of a U-shape, and four sides of the U-shaped stress transition structure are each provided with a plurality of evenly distributed strip grooves.

[0015] On the third aspect, the present application provides an IGBT device assembly product, including a device body and a semi-buried ceramic copper-clad carrier for the above-mentioned IGBT device, wherein the bottom of the device body is welded and mounted on the bottom of the mounting groove, and the pins of the device body are arranged on the upper surface of the copper carrier body.

[0016] Beneficial effects of the present invention: 1. The present application is equivalent to the prior art, and the mounting groove can play the role of positioning and preventing the chip from shifting. It is no longer necessary to use ink solder mask to prevent chip shifting, which can improve the reliability of the package. At the same time, since the device body is semi-buried in the mounting groove of the copper carrier body, the height of the packaged product can be reduced, making the packaging structure flat. In addition, since the present application installs the device body in a semi-buried manner, a semi-enclosed heat dissipation structure can be formed after the device body is welded and installed, thereby improving the heat dissipation effect.

[0017] 2. Due to the characteristics of the ceramic copper-clad carrier board itself, the main body of the copper carrier board will be continuously pressed by the ceramic substrate. Therefore, the present application can etch a stress transition structure distributed on the surrounding side of the installation groove through the design concept of installing an etching film hole array and a stress transition etching film hole array with different total hole area ratios, so that there is a transition area for stress between the main body of the copper carrier board and the installation groove, avoiding excessive stress concentration, and solving the current problem that the stress is easily concentrated after being squeezed by the ceramic substrate due to the thin size of the copper plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the process of Example 1 of the present application.

[0019] Figure 2 This is a schematic diagram of the top view of the anti-corrosion blue film after punching.

[0020] Figure 3 This is a schematic diagram of the cross-sectional structure of Example 2 of the present application.

[0021] Figure 4 This is a stress schematic diagram when the return-type stress transition structure in Example 2 of the present application is a slope structure.

[0022] Figure 5 This is a stress schematic diagram when the return-type stress transition structure in Example 2 of the present application is a strip groove.

[0023] Figure 6 This is a schematic diagram of the cross-sectional structure of Example 3 of the present application.

[0024] Explanation of the accompanying drawings: 1-anti-corrosion blue film, 11-installation etching area, 111-installation etching film hole array, 12-stress transition etching area, 121-stress transition etching film hole array, 2-ceramic substrate, 3-copper carrier body, 31-installation groove, 32-stress transition structure, 33-solder mask hole, 4-device body, 41-pin. DETAILED DESCRIPTION

[0025] The present invention will be further described in detail below in conjunction with embodiments and drawings, but the embodiments of the present invention are not limited thereto.

[0026] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "longitudinal", "lateral", "horizontal", "inside", "outside", "front", "back", "top", "bottom" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are the directions or positional relationships in which the inventive product is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0027] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed", "opened", "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0028] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0029] Embodiment 1: like Figure 1 and Figure 2 As shown, this embodiment provides a method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device, which specifically includes the following steps: S1, coating: coating the surface of the copper carrier body 3 with an anti-corrosion blue film 1 to obtain a copper carrier body 3 with the surface covered with the anti-corrosion blue film 1; S2, punching film holes: punching the installation etching film hole array 111 and the stress transition etching film hole array 121 in the preset installation etching area 11 and stress transition etching area 12 of the anti-corrosion blue film 1 by using film or laser direct writing; The stress transition etching area 12 is distributed around the mounting etching area 11; The total hole area ratio of the installation etching film hole array 111 is greater than the total hole area ratio of the stress transition etching film hole array 121; S3, chemical etching: chemical etching is performed through the installation etching film hole array 111 and the stress transition etching film hole array 121 to form the installation groove 31 located below the installation etching area 11 and the stress transition structure 32 located below the stress transition etching area 12; The stress transition structure 32 is distributed around the mounting groove 31 .

[0030] The concept of the present application is: after covering the anti-corrosion blue film 1, an installation etching film hole array 111 and a stress transition etching film hole array 121 are punched on the anti-corrosion blue film 1, so that the chemical etching liquid can leak downward from the etching film holes of the installation etching film hole array 111 and the stress transition etching film hole array 121 to perform chemical etching. Due to the characteristics of chemical etching, the chemical etching liquid will not only continue to leak downward and etch, but also diffuse and etch around. Therefore, after etching for a period of time, a sunken installation groove 31 can be etched. Since the non-installation etching film hole array 111 and the stress transition etching film hole array 12 of the installation etching area 11 and the stress transition etching area 12 are relatively late in contact with the chemical etching liquid, after etching is completed, the bottom roughness of the installation groove 31 will be higher. After the device body 4 is welded to the bottom of the installation groove 31, the connection effect between the welding paste and the bottom of the installation groove 31 is good, which can improve the stability after welding.

[0031] Therefore, the manufacturing method of the semi-buried ceramic copper-clad substrate for IGBT devices proposed in the present application manufactures a semi-buried ceramic copper-clad substrate for IGBT devices. After the device body 4 is installed in the mounting groove 31 of the copper substrate body 3, it is equivalent to the prior art and does not need to use ink solder resist to prevent chip deviation, thereby improving the reliability of the package. At the same time, since the device body 4 is semi-buried in the mounting groove 31 of the copper substrate body 3, the height of the packaged product can be reduced, making the package structure flat. In addition, since the present application installs the device body 4 in a semi-buried manner, a semi-enclosed heat dissipation structure is formed after the device body 4 is installed, thereby improving the heat dissipation effect.

[0032] In particular, due to the characteristics of the ceramic copper-clad carrier itself, the copper carrier body 3 will be continuously pressed by the ceramic substrate 2. Therefore, the present application can etch a stress transition structure 32 distributed on the surrounding side of the mounting groove 31 through a stress transition etching film hole array 121 designed with different densities or shapes, so that there is a transition area for stress between the copper carrier body 3 and the mounting groove 31, which can solve the problem of stress imbalance caused by excessive stress concentration.

[0033] The anti-corrosion blue film 1 in this embodiment is an existing conventional material, and the corrosive material used for chemical etching is dilute sulfuric acid. In some embodiments, the order of S1 and S2 can be swapped, and the anti-corrosion blue film 1 in S1 is the anti-corrosion blue film 1 treated by S2.

[0034] Specifically, in this embodiment, if Figure 1 As shown, the step S4 is also included: bottom trimming: using laser to trim the bottom of the mounting groove 31 until the bottom of the mounting groove 31 reaches a set flatness range; in this embodiment, the bottom trimming by laser can make the bottom of the mounting groove 31 smoother, thereby improving the adaptability of different types of device bodies 4.

[0035] Before S4, it also includes the following steps: S40: Scan and detect the depth of each position at the bottom of the installation groove 31, and calculate the bottom repair depth of each position in real time according to the set depth. In this embodiment, after scanning and detecting the depth of each position at the bottom of the installation groove, the depth difference between each position and the preset position can be calculated in real time, and then the number of bottom repairs of the laser beam at each position can be calculated according to the depth removed by the laser beam in a single bottom repair. Through real-time detection and calculation, a relatively smooth bottom surface of the installation groove 31 can be repaired by using a laser beam.

[0036] Specifically, in this embodiment, if Figure 2 As shown, in S2, the shapes of the installation etching area 11 and the stress transition etching area 12 are rectangular and U-shaped respectively, and the installation etching film hole array 111 and the stress transition etching film hole array 121 in the two areas are respectively rectangular and U-shaped; and the size and shape of the single etching film hole of the installation etching film hole array 111 and the stress transition etching film hole array 121 are the same, and the shape is circular or regular polygonal; The holes in the installation etching film hole array 111 are evenly distributed and the distribution density is greater than the distribution density of the etching film holes in the return stress transition etching area 12; The hole distribution density of the stress transition etching film hole array 121 gradually increases toward the direction close to the installation etching film hole array 111, so that during the etching process, the acidic etching solution can form an inclined structure that sinks in a step-like manner in the stress transition etching area 12 along the direction close to the installation etching area 11 until it is flush with the bottom of the installation groove 31.

[0037] In this embodiment, in S4, when the bottom of the installation groove 31 is trimmed by laser, the stress transition structure 32 can also be trimmed synchronously to make the stress transition structure 32 smoother. In some embodiments, the trimming of the stress transition structure 32 can be set before or after the bottom of the installation groove 31 is trimmed.

[0038] In this embodiment, the shapes of the etching film holes in the installation etching area 11 and the stress transition etching area 12 are both circular holes.

[0039] In some optional embodiments, in S2, the shape of the installation etching area 11 is rectangular, the installation etching film hole array 111 in the area is a corresponding rectangular array, and the shape of the etching film holes of the installation etching film hole array 111 is circular or regular polygonal; The stress transition etching area 12 is in the shape of a U-shape, and the shapes of the several etching film holes of the stress transition etching film hole array 121 are all long strips and distributed in the shape of a U-shape.

[0040] In this embodiment, a solder resist area is further provided between the stress transition etching area 12 and the installation etching area 11. In S3, a solder resist hole 33 needs to be etched in the solder resist area. The bottom height of the solder resist hole 33 is lower than the bottom height of the mounting groove 31. In this embodiment, the solder resist hole 33 is a blind hole. By setting the solder resist area, the solder during the soldering process of the device body 4 can be prevented from spreading upward to the top of the device body 4, causing a short circuit or other problems.

[0041] Embodiment 2: like Figure 3 and Figure 4 The embodiment shown provides a semi-buried ceramic copper-clad carrier for an IGBT device, which is manufactured by the above-mentioned method for manufacturing a semi-buried ceramic copper-clad carrier for an IGBT device, and includes a copper carrier body 3; The copper carrier body 3 is provided with a mounting groove 31 and a stress transition structure 32 for avoiding stress concentration. The stress transition structure 32 is distributed around the mounting groove 31 .

[0042] In the industry, a ceramic copper-clad carrier generally includes a ceramic substrate 2 and a copper carrier body 3 that are bonded and fixed. Since the thickness of the ceramic substrate 2 and the copper carrier body 3 are relatively thin, generally speaking, during the production process, the ceramic substrate 2 will have a certain degree of curvature, which will cause the copper carrier body 3 to have a large stress after being bonded and fixed to the ceramic substrate 2. Therefore, in this embodiment, acid etching and laser beam bottom repair are used in combination on the copper carrier body 3 to etch out the mounting groove 31, which will cause the stress between the unetched area of ​​the copper carrier body 3 and the mounting groove 31 to be too concentrated. The stress transition structure 32 provided in this embodiment is located between the mounting groove 31 and the unetched area of ​​the copper carrier body 3, such as Figure 3 and Figure 4 As shown, the stress transition structure 32 provides a transition area for stress, thereby avoiding the problem of excessive stress concentration.

[0043] Specifically, in this embodiment, if Figure 3As shown, a solder mask area is also provided between the stress transition structure 32 and the mounting groove 31. A number of solder mask holes 33 are distributed in the solder mask area, and the bottom height of the solder mask holes 33 is lower than the bottom height of the mounting groove 31 and they are evenly distributed. By providing the solder mask area, it is possible to prevent the solder from spreading upwards to the top of the device body 4 during the welding process of the device body 4, resulting in short circuits or other problems. The solder mask holes 33 in this embodiment are blind holes.

[0044] Specifically, in this embodiment, as Figure 3 shown, the shape of the stress transition structure 32 is in a shape of a rectangle with rounded corners, and the four side surfaces of the rectangular stress transition structure 32 with rounded corners are all ramp structures that slope downwards. Since the rectangular stress transition structure 32 with rounded corners in this application is etched using an acidic etching solution, and during the process of the acidic etching solution etching downwards below the surface of the copper carrier plate body 3, it needs to leak downwards from the etching film holes in the stress transition etching area 12. Therefore, overall, the ramp surface in this embodiment is a ramp surface structure that slopes downwards, and in terms of the specific fine structure, the ramp surface in this embodiment is a ramp surface structure that sinks in a stepped manner. Moreover, due to the fact that during the manufacturing process, the density of the etching film holes in the stress transition etching area 12 gradually increases, the sinking steps of the ramp surface will gradually decrease. Especially in the area where the mounting groove 31 is located, the thickness dimension is thinner, and a smoother stress transition structure 32 can avoid the problem of excessive stress concentration at the connection position between the mounting groove 31 and the stress transition structure 32.

[0045] In some alternative embodiments, the shape of the stress transition structure 32 is in a shape of a rectangle with rounded corners, and the four side surfaces of the rectangular stress transition structure 32 with rounded corners are all a number of evenly distributed strip-shaped grooves. Since the rectangular stress transition structure 32 with rounded corners is a number of strip-shaped grooves evenly distributed in a shape of a rectangle with rounded corners, the strip-shaped grooves and the strip-shaped protrusions are arranged at intervals, forming a stress transition structure 32 that avoids excessive stress concentration. The stress schematic diagram is as Figure 5 shown. Those skilled in the art can also design other shapes of the stress transition structure 32 to play a role in avoiding excessive stress concentration, and no further examples will be given here.

[0046] Embodiment 3: As Figure 6 shown, this embodiment provides an IGBT device assembly product, including a device body 4 and the above-mentioned semi-embedded ceramic copper-clad carrier for IGBT devices. The bottom of the device body 4 is adhesively welded and installed at the bottom of the mounting groove 31, and the lead 41 of the device body 4 is placed on the upper surface of the copper carrier plate body 3.

[0047] After the device body 4 of this application is welded and installed in the mounting groove 31 of the copper carrier plate body 3, as Figure 5As shown, the packaging height of the IGBT device assembly product can be effectively reduced, the entire assembly product is flattened, and a semi-enclosed heat dissipation structure is formed to improve the heat dissipation effect. At the same time, the problem of device body 4 offset will not occur.

[0048] The rest of the structure of this embodiment is the same as that of the above-mentioned embodiment 2 and will not be described again here.

[0049] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device, characterized in that: The specific steps include: S1, obtaining a copper carrier body (3) having a surface covered with an anti-corrosion blue film (1); S2, punching film holes: punching an installation etching film hole array (111) and a stress transition etching film hole array (121) in a preset installation etching area (11) and a stress transition etching area (12) of the anti-corrosion blue film (1); The stress transition etching area (12) is distributed around the mounting etching area (11); The total hole area ratio of the installation etching film hole array (111) is greater than the total hole area ratio of the stress transition etching film hole array (121); S3, chemical etching: chemical etching is performed on the mounting etching film hole array (111) and the stress transition etching film hole array (121) to form a mounting groove (31) located below the mounting etching area (11) and a stress transition structure (32) located below the stress transition etching area (12); The stress transition structure (32) is distributed around the circumference of the installation groove (31).

2. The method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device according to claim 1, characterized in that: The method further comprises the following steps: S4, bottom trimming: trimming the bottom of the installation groove (31) by using a laser until the bottom of the installation groove (31) reaches a set flatness range; Before S4, it also includes the following steps: S40: Scan and detect the depth of each position at the bottom of the installation groove (31), and calculate the bottom repair depth of each position in real time according to the set depth.

3. The method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device according to claim 1, characterized in that: In S2, the shapes of the installation etching area (11) and the stress transition etching area (12) are respectively rectangular and U-shaped, and the installation etching film hole array (111) and the stress transition etching film hole array (121) in the two areas are respectively rectangular and U-shaped; and the size and shape of the individual etching film holes of the installation etching film hole array (111) and the stress transition etching film hole array (121) are the same, and the shapes are both circular or regular polygonal; The holes in the installation etching film hole array (111) are evenly distributed and the distribution density is greater than the distribution density of the etching film holes in the return stress transition etching area (12); The hole distribution density of the stress transition etching film hole array (121) gradually increases in a direction approaching the installation etching film hole array (111).

4. The method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device according to claim 1, characterized in that: In S2, the shape of the installation etching area (11) is rectangular, the installation etching film hole array (111) in the area is a corresponding rectangular array, and the shape of the etching film holes of the installation etching film hole array (111) is circular or regular polygonal; The stress transition etching area (12) is in the shape of a U-shape, and the shapes of a plurality of etching film holes in the stress transition etching film hole array (121) are all long strips and distributed in the shape of a U-shape.

5. The method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device according to claim 1, characterized in that: A solder resist area is also provided between the stress transition etching area (12) and the installation etching area (11), and in S3, a solder resist hole (33) needs to be etched in the solder resist area; The bottom height of the solder resist hole (33) is lower than the bottom height of the mounting groove (31).

6. A semi-buried ceramic copper-clad substrate for an IGBT device, manufactured by the method for manufacturing a semi-buried ceramic copper-clad substrate for an IGBT device according to any one of claims 1 to 5, characterized in that: It includes a copper carrier body (3); The copper carrier plate body (3) is provided with a mounting groove (31) and a stress transition structure (32) for avoiding stress concentration, and the stress transition structure (32) is distributed around the mounting groove (31).

7. The semi-buried ceramic copper-clad substrate for an IGBT device according to claim 6, characterized in that: A solder resist area is also provided between the stress transition structure (32) and the mounting groove (31), and a plurality of solder resist holes (33) having bottom heights lower than the bottom heights of the mounting groove (31) and being evenly distributed are distributed in the solder resist area.

8. The semi-buried ceramic copper-clad substrate for an IGBT device according to claim 6, characterized in that: The stress transition structure (32) is in the shape of a U-shaped structure, and the four side surfaces of the U-shaped stress transition structure (32) are all slope structures inclined downward.

9. The semi-buried ceramic copper-clad substrate for an IGBT device according to claim 6, characterized in that: The stress transition structure (32) is in the shape of a U-shaped structure, and the four sides of the U-shaped stress transition structure (32) are each provided with a plurality of evenly distributed strip grooves.

10. An IGBT device assembly product, comprising a device body (4), and a semi-buried ceramic copper-clad carrier for an IGBT device according to any one of claims 6 to 9, characterized in that: The bottom of the device body (4) is welded and mounted on the bottom of the mounting groove (31), and the pins (41) of the device body (4) are placed on the upper surface of the copper carrier body (3).

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