All-optical echo wall memristor for intra-fiber modulation

Abstract

The invention belongs to the technical field of intelligent optical fiber devices, and particularly relates to an in-fiber modulation all-optical echo wall memristor which comprises a single-mode optical fiber, a gradual change multimode optical fiber, an optical fiber echo wall, an optical phase change material thin film, an anti-oxidation layer thin film, a micro-nano detection optical fiber, a beam expanding light beam and a converging light beam. A section of gradient multimode optical fiber is welded behind a single-mode optical fiber, an optical fiber echo wall is fused and fired at the tail end of the gradient multimode optical fiber, an optical phase change material film and an anti-oxidation layer film are sequentially plated on the surface of the optical fiber echo wall, an optical fiber echo wall memristor is constructed, and the memristive state of the echo wall is detected by using a micro-nano detection optical fiber. According to the all-optical echo wall memristor designed by the invention, the regulation and control of the nonvolatile storage state of the optical fiber echo wall are realized in an in-fiber regulation and control manner, the limitation that the current optical fiber echo wall memristor depends on spatial light regulation and control is overcome, the all-optical echo wall memristor has the characteristics of high speed, low power consumption, electromagnetic interference resistance and the like, and a novel device configuration is brought to a photon memristor; and the development of photon neural mimicry calculation is facilitated.

Description

Technical Field

[0001] The present invention belongs to the technical field of intelligent optical fiber devices, and particularly relates to an all-optical whispering gallery memristor with in-fiber modulation. Background Art

[0002] Due to its ultra-high quality factor resonance spectrum, the optical fiber whispering gallery has been widely used in the fields of optical fiber sensing and optical fiber communication. In recent years, with the development of photonic neuromorphic computing, the exploration and research of new photonic memristors are very important. At present, silicon-based waveguide memristors and optical fiber memristors have been sufficiently developed, and the research on whispering gallery memristors urgently needs to break through.

[0003] In 2022, the first optical fiber whispering gallery non-volatile memory was proposed, which adopted the method of external spatial light control to realize the erasing and writing of 8-level memristive states (Acs Photonics, 2022, 9(4): 1180-1187.). Subsequently, the transmission properties of the optical fiber whispering gallery non-volatile memory were further studied (ACS Photonics, 2023, 11(1): 102-110.), and the bidirectional non-volatile storage function was realized. However, these optical fiber whispering gallery non-volatile storage areas all rely on the external spatial light method to control the phase change material, and the capacity and speed of non-volatile storage are greatly limited. There is an urgent need to develop an all-optical whispering gallery memristor with in-fiber modulation. Summary of the Invention

[0004] The purpose of the present invention is to provide an all-optical whispering gallery memristor with in-fiber modulation. The all-optical whispering gallery memristor designed in the present invention realizes the control of the non-volatile storage state of the optical fiber whispering gallery in an in-fiber control manner, overcomes the limitation of the current optical fiber whispering gallery memristor relying on spatial light control, and has characteristics such as high speed, low power consumption, and anti-electromagnetic interference, bringing a new device configuration for photonic memristors and helping the development of photonic neuromorphic computing.

[0005] The technical solution adopted by the present invention is specifically as follows:

[0006] An all-optical whispering gallery memristor with in-fiber modulation includes a single-mode optical fiber, a graded multimode optical fiber, an optical fiber whispering gallery, an optical phase change material thin film, an anti-oxidation layer thin film, a micro-nano detection optical fiber, an expanded light beam, and a converging light beam;

[0007] A section of graded multimode optical fiber is welded behind the single-mode optical fiber, and an optical fiber whispering gallery is melted and fired at the end of the graded multimode optical fiber. An optical phase change material thin film and an anti-oxidation layer thin film are sequentially plated on the surface of the optical fiber whispering gallery to construct an optical fiber whispering gallery memristor, and a micro-nano detection optical fiber is used to detect the memristive state of the whispering gallery;

[0008] The graded multimode fiber expands the light beam transmitted in the single-mode fiber, and the molten fiber optical whispering gallery converges the expanded light beam. The converged light beam is transmitted to the front surface in the fiber optical whispering gallery. Pulse light is injected into the single-mode fiber to realize the phase-state erasure of the optical phase change material thin film on the surface of the fiber optical whispering gallery, thereby causing non-volatile regulation of the resonance spectrum of the whispering gallery. The resonance spectrum of the whispering gallery on the front surface before convergence is detected by the micro-nano detection fiber, that is, the current memristive state, and then the optical whispering gallery memristor for all-optical reading and writing is completed.

[0009] Preferably, after the graded multimode fiber is welded to the single-mode fiber, the length is exactly such that the transmitted light beam is expanded to the maximum beam waist diameter.

[0010] Preferably, an optical phase change material thin film and an anti-oxidation layer thin film are successively deposited on the surface of the fiber optical whispering gallery by radio frequency magnetron sputtering. Among them, the optical phase change material thin film is a chalcogenide compound, containing at least two or more elements of Ge, Sb, and Te. This phase change material thin film has a crystalline state, an amorphous state, and an intermediate state between the crystalline state and the amorphous state. The transmittance is different in different phase states. High-energy narrow pulse width light makes the phase change material amorphous, and at this time, the resonance valley of the fiber optical whispering gallery becomes shallower. Low-energy wide pulse width light makes the phase change material crystallize, and at this time, the resonance valley of the fiber optical whispering gallery becomes deeper. The anti-oxidation layer thin film prevents the optical phase change material thin film from being oxidized. The anti-oxidation layer thin film is an anti-oxidation material. For example, the anti-oxidation layer thin film is Au, ITO, or other anti-oxidation materials.

[0011] Preferably, the micro-nano detection fiber is obtained by melting and tapering a single-mode fiber into a low-loss, micron-scale micro-nano fiber for coupling with the fiber optical whispering gallery to detect the resonance spectrum of the fiber optical whispering gallery.

[0012] Preferably, the all-optical whispering gallery memristor uses the fiber optical whispering gallery as a substrate platform. By using pulse light with different energies to regulate the optical phase change material thin film on the surface of the fiber optical whispering gallery to make it in different phase states, the resonance spectrum of the fiber optical whispering gallery is detected by the swept-frequency laser in the micro-nano detection fiber, and then the fiber optical whispering gallery memristor for non-volatile storage is completed.

[0013] The technical effects achieved by the present invention are:

[0014] The present invention discloses an all-optical whispering gallery memristor with in-fiber modulation. The all-optical whispering gallery memristor with in-fiber modulation includes a single-mode fiber, a graded multimode fiber, a fiber whispering gallery, an optical phase change material thin film, an anti-oxidation layer thin film, and a micro-nano detection fiber. The graded multimode fiber is cascaded after the single-mode fiber. At the end of the graded multimode fiber, a fiber whispering gallery is prepared by melting. An optical phase change material thin film and an anti-oxidation layer thin film are sequentially deposited to construct a fiber whispering gallery memristor. The micro-nano detection fiber is used to detect the memristive state of the whispering gallery. The cascaded graded multimode fiber expands the light beam transmitted in the single-mode fiber, and the melted fiber whispering gallery converges the expanded light beam to the front surface of the whispering gallery. Pulse light is injected into the single-mode fiber to realize the phase state erasure of the optical phase change material thin film on the surface of the whispering gallery, thereby causing non-volatile regulation of the resonance spectrum of the whispering gallery. The spectrum of the whispering gallery on the converging front surface is detected by the micro-nano detection fiber, that is, the current memristive state, and then the all-optical read-write whispering gallery memristor is completed. The all-optical whispering gallery memristor with in-fiber modulation endows the whispering gallery with a non-volatile storage function, and has characteristics such as high speed, low power consumption, and anti-electromagnetic interference, bringing a new device configuration for photonic memristors and contributing to the development of photonic neuromorphic computing.

[0015] The all-optical whispering gallery memristor designed in the present invention realizes the regulation of the non-volatile storage state of the fiber whispering gallery in an in-fiber regulation manner, overcomes the limitation that the current fiber whispering gallery memristor relies on spatial light regulation, and has characteristics such as high speed, low power consumption, and anti-electromagnetic interference, bringing a new device configuration for photonic memristors and contributing to the development of photonic neuromorphic computing. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of an all-optical whispering gallery memristor with in-fiber modulation provided by the present invention;

[0017] Figure 2 It is an energy level regulation scheme diagram of an all-optical whispering gallery memristor with in-fiber modulation provided by the present invention.

[0018] In the drawings, the list of components represented by each reference numeral is as follows:

[0019] 1. Single-mode optical fiber; 2. Graded multimode optical fiber; 3. Optical fiber whispering gallery; 4. Optical phase change material thin film; 5. Anti-oxidation layer thin film; 6. Micro-nano detection optical fiber; 7. Expanded beam; 8. Converging beam; 11. Detection optical module; 12. Modulated pulsed light module; 13. Optical detection module; 1101. First tunable laser; 1102. Tunable optical attenuator; 1103. First optical fiber isolator; 1201. Second tunable laser; 1202. Electrical pulse generator; 1203. Intensity modulator; 1204. Erbium-doped optical fiber amplifier; 1205. Second optical fiber isolator; 1301. Industrial control computer; 1302. Acquisition card; 1303. High-speed photodetector; 1304. Low-speed photodetector; 1305. Optical fiber coupler. Detailed implementation mode

[0020] In order to make the purpose and advantages of the present invention clearer, the present invention will be specifically described below in conjunction with embodiments. It should be understood that the following text is only used to describe one or several specific implementation manners of the present invention, and does not strictly limit the scope of protection specifically requested by the present invention.

[0021] As Figure 1 - Figure 2 shown, an all-optical whispering gallery memristor with in-fiber modulation includes a single-mode optical fiber 1, a graded multimode optical fiber 2, an optical fiber whispering gallery 3, an optical phase change material thin film 4, an anti-oxidation layer thin film 5, a micro-nano detection optical fiber 6, an expanded beam 7, and a converging beam 8;

[0022] A section of graded multimode optical fiber 2 is welded behind the single-mode optical fiber 1, and an optical fiber whispering gallery 3 is fused and fired at the end of the graded multimode optical fiber 2. An optical phase change material thin film 4 and an anti-oxidation layer thin film 5 are sequentially deposited on the surface of the optical fiber whispering gallery 3 to construct an optical fiber whispering gallery memristor, and the memristive state of the whispering gallery is detected by using the micro-nano detection optical fiber 6;

[0023] The graded multimode optical fiber 2 expands the beam transmitted in the single-mode optical fiber 1, and the fused optical fiber whispering gallery 3 converges the expanded beam 7. The converging beam 8 is transmitted in the optical fiber whispering gallery 3 to the front surface. A pulsed light is injected into the single-mode optical fiber 1 to realize the phase state erasure of the optical phase change material thin film 4 on the surface of the optical fiber whispering gallery 3, thereby causing non-volatile regulation of the resonance spectrum of the whispering gallery. The whispering gallery spectrum on the converging front surface is detected by the micro-nano detection optical fiber 6, that is, the current memristive state, and then the all-optical read-write whispering gallery memristor is completed.

[0024] Preferably, after the graded multimode optical fiber 2 is welded to the single-mode optical fiber 1, the length is just enough to expand the transmitted beam to the maximum waist diameter.

[0025] Preferably, an optical phase change material thin film 4 and an anti-oxidation layer thin film 5 are successively deposited on the surface of the fiber optic whispering gallery 3 by radio frequency magnetron sputtering. Among them, the optical phase change material thin film 4 is a chalcogenide compound containing at least two or more elements of Ge, Sb, and Te. This phase change material thin film exists in a crystalline state, an amorphous state, and an intermediate state between the crystalline state and the amorphous state. The transmittance is different in different phase states. High-energy narrow pulse-width pulsed light causes the phase change material to become amorphous, and at this time, the resonance valley of the fiber optic whispering gallery 3 becomes shallower. Low-energy wide pulse-width pulsed light causes the phase change material to crystallize, and at this time, the resonance valley of the fiber optic whispering gallery 3 becomes deeper. The anti-oxidation layer thin film 5 prevents the optical phase change material thin film 4 from oxidizing. The anti-oxidation layer thin film 5 is an anti-oxidation material. For example, the anti-oxidation layer thin film 5 is Au, ITO, or other anti-oxidation materials.

[0026] Preferably, the micro-nano detection optical fiber 6 is obtained by fusing and tapering a single-mode optical fiber 1 into a low-loss, micron-scale micro-nano optical fiber for coupling with the fiber optic whispering gallery 3 to detect the resonance spectrum of the fiber optic whispering gallery 3.

[0027] Preferably, the all-optical whispering gallery memristor uses the fiber optic whispering gallery 3 as a substrate platform. By using pulsed light with different energies to regulate the optical phase change material thin film 4 on the surface of the fiber optic whispering gallery 3 to make it in different phase states, and detecting the resonance spectrum of the fiber optic whispering gallery 3 through a swept-frequency laser in the micro-nano detection optical fiber 6, the non-volatile memory fiber optic whispering gallery memristor is completed.

[0028] The present invention discloses an all-optical whispering gallery memristor with in-fiber modulation. The all-optical whispering gallery memristor with in-fiber modulation includes a single-mode optical fiber 1, a graded multimode optical fiber 2, a fiber optic whispering gallery 3, an optical phase change material thin film 4, an anti-oxidation layer thin film 5, and a micro-nano detection optical fiber 6. The graded multimode optical fiber 2 is cascaded after the single-mode optical fiber 1. A fiber optic whispering gallery 3 is prepared by melting at the end of the graded multimode optical fiber 2, and an optical phase change material thin film 4 and an anti-oxidation layer thin film 5 are successively deposited to construct a fiber optic whispering gallery 3 memristor. The micro-nano detection optical fiber 6 is used to detect the memristive state of the whispering gallery. The cascaded graded multimode optical fiber 2 expands the light beam transmitted in the single-mode optical fiber 1, and the melted fiber optic whispering gallery 3 converges the expanded light beam 7 to the front surface of the whispering gallery. Pulsed light is injected into the single-mode optical fiber 1 to realize the phase state erasure of the optical phase change material thin film 4 on the surface of the whispering gallery, thereby causing non-volatile regulation of the resonance spectrum of the whispering gallery. The resonance spectrum of the whispering gallery on the front surface before convergence, that is, the current memristive state, is detected through the micro-nano detection optical fiber 6, and thus the all-optical read-write whispering gallery memristor is completed. The all-optical whispering gallery memristor with in-fiber modulation endows the whispering gallery with non-volatile memory function, has characteristics such as high speed, low power consumption, and anti-electromagnetic interference, brings a new device configuration for photonic memristors, and helps the development of photonic neuromorphic computing.

[0029] The all-optical whispering gallery memristor designed in the present invention realizes the regulation of the non-volatile storage state of the optical fiber whispering gallery 3 in a way of in-fiber regulation, overcomes the limitation that the current optical fiber whispering gallery 3 memristor relies on spatial light regulation, has characteristics such as high speed, low power consumption, and anti-electromagnetic interference, brings a new device configuration for the photonic memristor, and helps the development of photonic neuromorphic computing.

[0030] As Figure 1 - Figure 2 shown, the working principle of the present invention is: a diagram of the energy level regulation scheme of the in-fiber modulated all-optical whispering gallery memristor. The continuous light with a wavelength of λ probe is emitted by the first tunable laser 1101 in the detection optical module 11, and after passing through the tunable optical attenuator 1102 and the first optical fiber isolator 1103, it is incident on the micro-nano detection optical fiber 6 with an appropriate detection power, and is coupled with the optical fiber whispering gallery 3 to detect the current state of the optical fiber whispering gallery 3. The light emitted from the output end of the micro-nano detection optical fiber 6 is incident on the optical detection module 13, and the λ probe detection light is split by the optical fiber coupler 1305, and the output ends are respectively detected by the high-speed photodetector 1303 and the low-speed photodetector 1304, and data acquisition and control are performed by the data acquisition card 1302 and the industrial control computer 1301; when the first tunable laser 1101 is in the frequency-sweeping state, the resonance spectrum of the optical fiber whispering gallery 3 can be detected, and when the first tunable laser 1101 is in the single-frequency output state, the transmission intensity of the optical fiber whispering gallery 3 can be detected; in the modulation pulsed light module 12, the continuous light with a wavelength of λ1 is emitted by the second tunable laser 1201, and after being pulse-modulated by the intensity modulator 1203, modulated pulsed light is generated. The modulation electrical pulse signal is provided by the electrical pulse generator 1202, and after being amplified by the erbium-doped optical fiber amplifier 1204 to generate a modulated pulsed light signal with sufficient energy, it is incident on the optical fiber whispering gallery 3 after passing through the second optical fiber isolator 1205 to regulate the phase state of the optical phase change material thin film 4 on its surface, thereby completing the detection and erasure of the optical fiber whispering gallery memristor.

[0031] The above is only the preferred embodiment of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present invention. The structures, devices, and operation methods not specifically described and explained in the present invention are implemented according to the conventional means in the art without special instructions and limitations.

Claims

1. An intra-fiber modulated all-optical whispering gallery memristor, characterized in that: It comprises a single-mode optical fiber (1), a gradient multimode optical fiber (2), an optical fiber whispering gallery (3), an optical phase change material film (4), an anti-oxidation layer film (5), a micro-nano detection optical fiber (6), an expanding light beam (7) and a converging light beam (8); A section of graded-index multimode optical fiber (2) is welded to the back of the single-mode optical fiber (1), an optical fiber whispering gallery (3) is melt-sintered at the tail end of the graded-index multimode optical fiber (2), an optical phase change material film (4) and an anti-oxidation layer film (5) are sequentially plated on the surface of the optical fiber whispering gallery (3) to construct an optical fiber whispering gallery memristor, and a micro-nano detection optical fiber (6) is used to detect the memristor state of the whispering gallery; The graded-index multimode optical fiber (2) expands the light beam transmitted in the single-mode optical fiber (1), the fused optical fiber whispering gallery (3) converges the expanded light beam (7), the converged light beam (8) is transmitted to the front surface in the optical fiber whispering gallery (3), pulse light is injected into the single-mode optical fiber (1) to realize the phase erasure of the optical phase change material film (4) on the surface of the optical fiber whispering gallery (3), thereby leading to non-volatile regulation of the resonance spectrum of the whispering gallery, and the whispering gallery spectrum on the converged front surface, that is, the current memristor state, is detected by the micro-nano detection optical fiber (6), thereby completing the all-optical read-write whispering gallery memristor.

2. The intra-fiber modulated all-optical whispering gallery memristor according to claim 1, characterized in that: After the graded-index multimode optical fiber (2) is welded to the single-mode optical fiber (1), the length of the graded-index multimode optical fiber (2) is such that the transmission light beam is expanded to a maximum beam waist diameter.

3. The intra-fiber modulated all-optical whispering gallery memristor according to claim 2, characterized in that: The optical phase change material film (4) and the anti-oxidation layer film (5) are successively plated on the surface of the optical fiber whispering gallery (3) by using a radio frequency magnetron sputtering process, wherein the optical phase change material film (4) is a sulfur compound containing at least two or more elements of Ge, Sb, and Te, and the anti-oxidation layer film (5) prevents the optical phase change material film (4) from being oxidized, and the anti-oxidation layer film (5) is an antioxidant material.

4. The intra-fiber modulated all-optical whispering gallery memristor according to claim 3, characterized in that: The micro-nano detection optical fiber (6) is produced by melting and taper-drawing a single-mode optical fiber (1) into a low-loss, micron-level micro-nano optical fiber, and is used to couple with the optical fiber whispering gallery (3) to detect the resonance spectrum of the optical fiber whispering gallery (3).

5. The intra-fiber modulated all-optical whispering gallery memristor according to claim 4, characterized in that: The all-optical whispering gallery memristor uses an optical fiber whispering gallery (3) as a base platform, regulates an optical phase change material film (4) on the surface of the optical fiber whispering gallery (3) by pulse light of different energies, so that the film is in different phase states, and detects the resonance spectrum of the optical fiber whispering gallery (3) by a swept frequency laser in a micro-nano detection optical fiber (6), thereby completing a non-volatile storage optical fiber whispering gallery memristor.

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