Substrate processing apparatus

Abstract

The invention relates to a substrate processing apparatus. Provided is a structure for stabilizing the temperature of a shield member in a processing container. The substrate processing apparatus includes: a processing container; a temperature adjustment structure having a flow path inside the side wall of the processing container; a shield member provided inside the processing container so as to be close to the flow path; a conductive member provided between a portion of the side wall where the flow path is located and the shield member; a conductive buffer member that is sandwiched between the shield member and the conductive member; and a plurality of fixing members that are provided between the side wall and the conductive member, have elasticity and conductivity, and fix the conductive member so as to press the conductive member against the shield member.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus. Background Art

[0002] Patent Document 1 provides a vacuum processing apparatus capable of cooling a movable anti-deposition plate provided in a vacuum chamber using a simple structure. In the vacuum processing apparatus, an anti-deposition plate is provided in the vacuum chamber. The anti-deposition plate is composed of a fixed anti-deposition plate fixedly disposed in the vacuum chamber and a movable anti-deposition plate movable in one direction. The vacuum processing apparatus further includes a metal block erected on the inner wall surface of the vacuum chamber and a cooling member for cooling the block. At the processing position of the movable anti-deposition plate when performing a predetermined vacuum processing on the film-forming substrate, the top surface of the block is brought close to or abutted against the movable anti-deposition plate.

[0003] Patent Document 2 provides a shield cooling assembly including an adapter. The adapter is configured to fix the shield in the chamber, and a cooling passage for transporting a refrigerant is provided in the adapter to cool the shield. The shield cooling assembly can improve the heat transfer efficiency and the processing quality.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent No. 7057442

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 2022-518518 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] The present disclosure provides a substrate processing apparatus having a structure for stabilizing the temperature of a shield member in a processing container.

[0010] Solutions to the Problems

[0011] According to one aspect of the present disclosure, there is provided a substrate processing apparatus, which includes: a processing container; a temperature adjustment structure having a flow path inside a side wall of the processing container; a shield member provided in the processing container so as to be close to the flow path; a conductive member provided between a portion of the side wall where the flow path is located and the shield member; a conductive buffer member sandwiched between the shield member and the conductive member; and a plurality of fixing members provided between the side wall and the conductive member, having elasticity and conductivity, and fixing the conductive member by pressing the conductive member toward the shield member.

[0012] Effects of the Invention

[0013] According to one technical solution, it is possible to stabilize the temperature of the shielding member in the processing container. Description of the Drawings

[0014] Figure 1 It is a cross-sectional schematic view showing an example of a substrate processing apparatus according to an embodiment.

[0015] Figure 2 It is a cross-sectional schematic view showing an example of the structure around the shielding member according to an embodiment.

[0016] Figure 3 It is a cross-sectional schematic view showing an example of the structure around a conventional shielding member.

[0017] Figure 4 is Figure 1 A - A cross-sectional view of

[0018] Figure 5 It is a cross-sectional schematic view showing an example of the structure around the shielding member of a modified example.

[0019] Description of Reference Numerals

[0020] 1, substrate processing apparatus; 10, processing container; 10s, processing space; 23, shielding member; 200, 200a, structure around the shielding member; 201, fixing member; 202, conductive member; 203, buffer member; 204, first elastic member; 205, second elastic member; 300, cooling structure; 300a, flow path. Detailed Embodiments

[0021] The following describes the embodiments for implementing the present disclosure with reference to the drawings. In each figure, sometimes the same reference numerals are assigned to the same structural parts, and repeated descriptions are omitted.

[0022] [Substrate Processing Apparatus]

[0023] Use Figure 1 and Figure 2 to describe a substrate processing apparatus 1 according to an embodiment. Figure 1 It is a cross-sectional schematic view showing an example of a substrate processing apparatus 1 according to an embodiment. Figure 2 It is a cross-sectional schematic view showing an example of the structure 200 around the shielding member according to an embodiment.

[0024] The substrate processing apparatus 1 is a PVD (Physical Vapor Deposition) sputtering apparatus (film forming apparatus), and is a magnetron sputtering apparatus having a cathode portion 2 with a sputtering source at the ceiling portion (top cover) of the processing container 10.

[0025] The substrate processing apparatus 1 includes a processing container 10 and a mounting stage 20. The mounting stage 20 has a mounting surface 20a for mounting a substrate W such as a semiconductor wafer. A cathode unit 2 is located above the mounting stage 20 and is configured to sputter a target T provided on the ceiling portion. Sputtering particles (film-forming atoms) emitted from the target T adhere (deposit) on the surface of the substrate W mounted on the mounting stage 20, thereby performing a film-forming process on the substrate W. A processing space 10s is defined by a side wall 10a of the processing container 10, the ceiling portion, and the mounting stage 20.

[0026] The cathode unit 2 has a substantially conical shape (e.g., a substantially quadrangular pyramid shape, a conical shape, etc.) on the ceiling portion. A central axis Ax is set to be located at the center of the processing container 10, pass through the top of the ceiling portion, extend along the vertical direction, and pass through the center of the mounting stage 20. The center of the mounting surface 20a of the mounting stage 20 coincides with the central axis Ax. The mounting stage 20 is supported by a support portion at the bottom of the processing container 10. The mounting stage 20 may also be configured to be rotatable by a rotation device (not shown).

[0027] The processing container 10 is formed of, for example, aluminum. The processing container 10 is connected to a ground potential. That is, the processing container 10 is grounded. The processing container 10 has a feed-in / outlet for communicating the processing space 10s with the outside of the processing container 10 and a gate valve (both not shown) for opening and closing the feed-in / outlet. The substrate processing apparatus 1 feeds in and out the substrate W via the feed-in / outlet by a conveying device (not shown) when the gate valve is open. In addition, an exhaust device (not shown) such as a vacuum pump evacuates the inside of the processing container 10 so that the processing space 10s becomes a desired vacuum (reduced pressure) state.

[0028] A cathode unit 2 is provided in the upper part of the processing container 10. The cathode unit 2 is configured to be disposed opposite to the mounting stage 20 and sputter a plurality of targets T. The cathode unit 2 includes a target holding portion 130, a target covering portion 140, a gas supply portion 150, and a magnet mechanism portion 170. The target holding portion 130 holds a plurality of targets T as cathode targets at positions separated upward from the mounting stage 20. Figure 1 The illustrated substrate processing apparatus 1 has two target holding portions 130. However, the plurality of targets T may be two or more, for example, four targets T.

[0029] The target holding portion 130 includes: a metal holding member 131 that holds a plurality of targets T respectively; and an insulating member 132 that fixes the outer peripheral portions of the plurality of holding members 131 and supports the holding members 131.

[0030] The targets T held by the holders 131 are each formed of a material having a film-forming substance. Each target T is configured as a rectangular flat plate. In addition, the substrate processing apparatus 1 may also include targets T formed of different types of materials. For example, by selectively sputtering multiple targets T formed of different materials, a multilayer film can be formed in the processing chamber 10. In other words, the substrate processing apparatus 1 may also perform co-sputtering (dual sputtering) for simultaneously forming films on multiple targets. As an example of the film-forming process, in one embodiment, the substrate processing apparatus 1 forms a silicon (Si) film or the like on the substrate W.

[0031] Each of the holders 131 is formed in a rectangular shape that is one size larger than the target T in plan view. Each of the holders 131 is fixed to the inclined surface of the ceiling portion by means of an insulating member 132. Since each of the holders 131 is fixed to the inclined surface of the ceiling portion, each of the holders 131 holds the surfaces (sputtering surfaces exposed to the processing space 10s) of the multiple targets T in a state inclined with respect to the central axis Ax.

[0032] The power supply connected to the cathode portion 2 may be either a DC (direct current) power supply or an RF (radio frequency) power supply, or both a DC power supply and an RF power supply, but is not limited thereto. When the power supply connected to the cathode portion 2 is only a DC power supply, a DC magnet is used for sputtering with the magnet 171. When the power supply connected to the cathode portion 2 is a DC power supply and an RF power supply, the magnet 171 uses a PCM (Point-Cusp-Magnetic Field) magnet to activate the ionized particles and perform sputtering.

[0033] A DC power supply 133 is electrically connected to the targets T held by the target holders 130 with respect to the holders 131. Each of the multiple DC power supplies 133 applies a negative DC voltage to the connected target T. In addition, the DC power supply 133 may also be a single power supply that selectively applies a voltage to multiple targets T.

[0034] In addition, a metal target shield (anti-deposition shield) 135 is provided so as to surround the targets T held by the holders 131. The target shield 135 has an opening for exposing the target T and is fixed to the inclined surface of the conical portion 113 by means of an insulating member 132. That is, an insulating member 132 is provided between the processing chamber 10 connected to the ground potential and the target shield 135. Thereby, the target shield 135 is not electrically connected to the processing chamber 10 and can be set to a potential different from the ground potential. In addition, the target shield 135 is not electrically connected to the holder 131.

[0035] In addition, a target shield 135 is connected to an RF (Radio Frequency) power supply 137 via an impedance matcher 136. One end of the RF power supply 137 is connected to a ground potential, and the other end is connected to the impedance matcher 136. The RF power supply 137 supplies weak RF power to the target shield 135 via the impedance matcher 136. Here, the RF power supplied by the RF power supply 137 has a frequency in the range of 400 kHz or more and 100 MHz or less, preferably 50 W or more and 10 kW or less.

[0036] The impedance matcher 136 is provided between the RF power supply 137 and the target shield 135. Here, sputtering particles of a high-resistance material emitted from the target T adhere to the substrate W to form a film, and at the same time, they also adhere to the target shield 135, forming a high-resistance film on the surface of the target shield 135. The impedance matcher 136 performs impedance matching so as to reduce (or substantially make zero) the resistance of the target shield 135 and the high-resistance film formed on the target shield 135 in a circuit where current (electrons) flows from the plasma to a set potential.

[0037] The magnet mechanism unit 170 applies a magnetic field to each of the targets T. By applying a magnetic field to each of the targets T by the magnet mechanism unit 170, the magnet mechanism unit 170 guides the plasma to the targets T. The magnet mechanism unit 170 has a magnet 171 (cathode magnet) and an operating unit 172 that holds the magnet 171 so as to be able to operate, respectively, with respect to the plurality of holding members 131. That is, the magnet 171 can be driven by the operating unit 172. In Figure 1 the example, two magnets 171 and two operating units 172 that respectively hold the two magnets 171 are provided corresponding to each of the two holding members 131.

[0038] The magnets 171 are each formed in the same shape as each other. In addition, the magnets 171 each generate the same degree of magnetic force. Specifically, each of the magnets 171 has a substantially rectangular shape in a top view. In the held state of the operating unit 172, the long side of the magnet 171 extends in a direction parallel to the width direction of the rectangular target T, while the short side of the magnet 171 extends in a direction parallel to the length direction of the rectangular target T.

[0039] Each of the magnets 171 can be a permanent magnet. The material constituting each of the magnets 171 is not particularly limited as long as it has an appropriate magnetic force, and examples thereof include iron, cobalt, nickel, samarium, and neodymium.

[0040] The actuating portion 172 that holds each magnet 171 reciprocates the held magnet 171 in the longitudinal direction of the target T. That is, the magnet 171 is configured to be movable. In addition, the actuating portion 172 that holds each magnet 171 moves the held magnet 171 away from and closer to the target T. Specifically, each actuating portion 172 includes: a reciprocating mechanism 174 that holds the magnet 171 and reciprocates the magnet 171; and an approaching / separating mechanism 175 that holds the reciprocating mechanism 174 and moves the reciprocating mechanism 174 away from and closer to the target T.

[0041] The target covering portion 140 has a second shielding member 141 disposed in the processing container 10 and a supporting portion 142 that supports the second shielding member 141 so as to be capable of operating.

[0042] The second shielding member 141 is provided between the plurality of targets T and the stage 20. The second shielding member 141 is formed in a conical shape substantially parallel to the inclined surface of the ceiling portion of the processing container 10. The second shielding member 141 can face the sputtering surfaces of the plurality of targets T. In addition, the second shielding member 141 has an opening 141a corresponding to the target T. The opening 141a is an opening having a shape slightly larger than that of the target T, and the opening 141a moves by rotation of the second shielding member 141.

[0043] The opening 141a is disposed to face one target T (selected target Ts) among the plurality of targets T by rotation of the supporting portion 142. By disposing the opening 141a to face the selected target Ts, the second shielding member 141 exposes only the selected target Ts relative to the substrate W on the stage 20. Moreover, the second shielding member 141 does not expose the other targets T (non-selected targets).

[0044] The supporting portion 142 has a columnar rotating shaft 143 and a rotating portion 144 that rotates the rotating shaft 143. The axis of the rotating shaft 143 coincides with the central axis Ax of the processing container 10. The rotating shaft 143 extends in the vertical direction and fixes the center (apex) of the second shielding member 141 at the lower end. The rotating shaft 143 passes through the center of the ceiling portion and protrudes to the outside of the processing container 10.

[0045] The rotating portion 144 is disposed outside the processing container 10 and rotates the rotating shaft 143 relative to a connector 155a that holds the rotating shaft 143 at the upper end by means of a rotation transmission portion (not shown). As a result, the rotating shaft 143 and the second shielding member 141 rotate about the central axis Ax. Therefore, the target covering portion 140 can adjust the circumferential position of the opening 141a so that the opening 141a faces the selected target Ts for sputtering.

[0046] In addition, the substrate processing apparatus 1 performs sputtering by switching the target covering parts 140 with each other, but it is also possible to perform sputtering simultaneously without providing the target covering parts 140.

[0047] The gas supply unit 150 supplies the excitation gas from the gas introduction part that penetrates the through-connector 155a and the rotating shaft 143. The gas supply unit 150 has a pipe 152 through which the gas flows outside the processing container 10. In addition, the gas supply unit 150 successively has a gas source 153, a flow controller 154, and a gas introduction part from the upstream side to the downstream side of the pipe 152.

[0048] The gas source 153 stores the excitation gas (e.g., argon gas). The gas source 153 supplies the gas to the pipe 152. The flow controller 154 adjusts the flow rate of the gas supplied into the processing container 10 by applying, for example, a mass flow controller or the like. The gas introduction part introduces the gas from the outside to the inside of the processing container 10.

[0049] The gas discharge part (not shown) provided in the substrate processing apparatus 1 has a decompression pump and an adapter for fixing the decompression pump to the bottom of the processing container 10. The gas discharge part decompresses the processing space 10s of the processing container 10.

[0050] The control unit 100 is composed of a computer and has a CPU, an input device, an output device, a display device, a memory, etc. The CPU reads a prescribed processing process stored in the memory or other storage media and causes the substrate processing apparatus 1 to execute sputtering processing based on the processing process.

[0051] [Conventional shielding member]

[0052] In the substrate processing apparatus 1, in a processing step such as film formation, the film adheres not only to the substrate W but also to the inside of the processing container 10. In order to avoid the influence on the device characteristics on the substrate W due to the stain (contamination) and fine particles generated from the adhered film and for the purpose of suppressing the generation of fine particles, a deposition-preventing plate called a shielding member has been conventionally applied inside the processing container 10.

[0053] However, in the processing step, sometimes the shielding member is deformed by the heat from the plasma generated in the processing space 10s and strained due to thermal aging. As a result, due to the stress characteristics (film stress) of the material of the shielding member, the adhered film is peeled off, causing contamination and fine particles again.

[0054] Therefore, conventionally, for the purpose of avoiding the thermal influence inside the processing container 10, a cooling structure such as a cooling flow path is provided inside the wall of the processing container 10 and inside the mounting table 20. Figure 3 It is a cross-sectional schematic view showing an example of the conventional cooling structure 500.

[0055] For example, as Figure 3 shown, a shielding member 401 is provided at a position on the outer peripheral side of the shielding members 21 and 22 that protect the mounting stage 20. The shielding member 401 is arranged to divide the processing space 10s above the mounting stage 20 and the exhaust space below the mounting stage 20 between the side wall 10b and the mounting stage 20 in the processing container 10. The shielding member 401 has a cylindrical side portion, an upper portion extending outward at the upper end of the side portion, and a lower portion extending inward at the lower end of the side portion. The upper portion of the shielding member 401 is fixed by screwing with a threaded member 403 to a metal shaft 402 extending vertically from the bottom of the processing container 10, whereby the shielding member 401 is fixed.

[0056] A cooling structure 500 is provided inside the side wall 10b. The cooling structure 500 has a flow path 500a in a manner close to the shielding member 401. The flow path 500a has an inlet 500b1 and an outlet 500b2 connected to a cooling unit (not shown). The flow path 500a is formed in a ring shape around the entire circumference of the side wall 10b. A temperature-controlled medium such as water or Galden, which is controlled to a specified temperature, flows into the flow path 500a from the inlet 500b1, flows through the flow path 500a around the entire circumference of the side wall 10b, flows out from the outlet 500b2, and returns to the cooling unit. In this way, the cooling structure 500 discharges heat from the shielding member 401 via the shaft 402 using the temperature-controlled medium circulating in the flow path 500a, and suppresses the temperature rise of the shielding member 401.

[0057] In this method, the shielding member 401 is heated due to discharge and plasma generation during processing, and the shielding member 401 is cooled due to the disappearance of plasma after processing. As a result, thermal expansion and contraction occur, and film peeling occurs due to film stress. In addition, since the threaded member 403 protrudes into the processing space 10s (discharge space), peeling of the film attached to the threaded member 403 may occur, which may affect maintainability.

[0058] On the other hand, there is a method in which the shielding member is pre-heated before processing, so that during the processing step, even in the case of heat input from the plasma, the temperature rise of the shielding member can be mitigated, the temperature change of the shielding member can be suppressed, and the temperature can be kept as constant as possible.

[0059] However, for some film-forming materials, the film stress increases, which may cause the film to be exposed to plasma and the film attached to the shielding member to peel off. Depending on the characteristics of the film material, there may be a case where the amount of film peeling increases and the generation of fine particles cannot be suppressed.

[0060] Therefore, it is important that film peeling is not easily caused during the processing step. Additionally, it is important to avoid abnormal discharge caused by plasma concentration on the protrusions due to the exposure of the head of the threaded member to the processing space 10s (discharge space) for the fixation of the shielding member.

[0061] However, in the method of adding a temperature adjustment structure, a complex structure will be added to the device, increasing the processing and recycling costs, complicating the balance of the volume of the processing container 10 and the maintainability, so it is not practical.

[0062] [Shielding member of the present embodiment]

[0063] Therefore, as Figure 1 and Figure 2 shown, in the present embodiment, a structure inside the processing container 10 is proposed that keeps the shielding member 23 at a constant temperature at all times during idle time and the processing step. In the cooling structure 300 of the present embodiment, the temperature of the shielding member 23 is maintained as close to room temperature as possible during idle time and the processing step, stabilizing the temperature of the shielding member 23 inside the processing container 10.

[0064] In addition, in the present embodiment, no further increase in the cooling structure is required, which can simplify the structure, reduce the processing and recycling costs, and improve the maintainability. Moreover, in the present embodiment, no protrusions such as threaded members for fixing the shielding member to the cooling structure need to be provided, which can prevent abnormal discharge and suppress the generation of particles.

[0065] Hereinafter, with reference to Figure 1 and Figure 2 , the cooling structure 300 of the present embodiment and the structure 200 around the shielding member 23 will be described centered thereon. Three shielding members 21, 22, and 23 are arranged between the mounting table 20 and the side wall 10a. The shielding members 21, 22, and 23 are formed of aluminum, for example. The shielding member 21 is fixed to the outer peripheral upper surface of the mounting table 20, surrounding the periphery of the substrate on the mounting table 20. The shielding member 22 is fixed to the outermost peripheral upper surface of the mounting table 20 and is provided so as to cover the outermost periphery and the side surface of the mounting table 20. The shielding member 22 is located below the shielding member 21 and overlaps the shielding member 21 in a top view. The shielding member 21 and the shielding member 22 are annular or cylindrical.

[0066] The shielding members 21 and 22 protect the mounting table 20 and inhibit the film from adhering to the upper surface and side surface of the mounting table 20. Since the shielding members 21 and 22 can be directly provided and fixed to the mounting table 20, the temperature change is small and film peeling is not likely to occur. In contrast, since particles are generated due to the exposure of the threaded part head to the processing space 10s, the shielding member 23 cannot be directly provided in the processing container 10. Therefore, the substrate processing apparatus 1 has a cooling structure 300 and a structure 200 around the shielding member 23 to improve the cooling efficiency of the shielding member 23 and inhibit the generation of particles.

[0067] The shielding member 23 is disposed near the side wall 10a of the processing container 10. A cooling structure 300 having a flow path 300a is provided inside the side wall 10a of the processing container 10. The side wall 10a protrudes over the entire circumference from the bottom of the processing container 10 to approximately the center of the side wall 10a and is thicker than the upper part of the side wall. The cooling structure 300 provides the flow path 300a in the protruding portion of the side wall 10a in a manner close to the shielding member 23. Thereby, the volume of the flow path 300a is increased, the flow rate of the temperature control medium flowing in the flow path 300a is increased, and the cooling efficiency can be improved.

[0068] The flow path 300a has a flow inlet 300b1 and a flow outlet 300b2 connected to a cooling unit (not shown). The flow path 300a is formed in a ring shape over the entire circumference of the side wall 10a. A temperature control medium such as water or Galden, which is controlled to a specified temperature, flows into the flow path 300a from the flow inlet 300b1, flows in the flow path 300a over the entire circumference of the side wall 10a, flows out from the flow outlet 300b2, and returns to the cooling unit. The cooling structure 300 is an example of a temperature adjustment structure that has a flow path 300a inside the side wall 10a of the processing container 10 to adjust the temperature of the shielding member 23. The temperature adjustment here includes both cooling and heating.

[0069] In this way, in the cooling structure 300, the position of the flow path 300a is set in a manner close to the shielding member 23, the flow path 300a is formed over the entire circumference of the shielding member 23, and a relatively large flow rate of the temperature control medium flows in the flow path 300a. Thereby, the cooling efficiency of the shielding member 23 can be improved.

[0070] Moreover, as Figure 1 shown, as the structure 200 around the shielding member 23, there are a fixing member 201, a conductive member 202, and a buffer member 203. The fixing member 201 has a first elastic member 204 and a second elastic member 205.

[0071] Refer to Figure 2Next, the structure 200 of the shielding member 23 and its periphery will be described. The shielding member 23 has a cylindrical side portion 23a and an upper portion 23b that extends outward (toward the side wall 10a) over the entire circumference from the upper end of the side portion 23a, and is configured such that a plurality of fixing members 201 are not exposed to the processing space 10s.

[0072] Furthermore, the shielding member 23 has a lower portion 23c that extends inward (toward the mounting table 20) over the entire circumference from the lower end of the side portion 23a. Thus, the shielding member 23 is disposed so as to divide the processing space 10s and the exhaust space below the mounting table 20 between the side wall 10a and the mounting table 20. That is, the shielding member 23 is a cylindrical member having a substantially letter S-shaped cross section in the circumferential direction. In addition, the shielding member 23 may not have the lower portion 23c. In this case, the shielding member 23 is a cylindrical member having a substantially letter L-shaped cross section in the circumferential direction.

[0073] A conductive member 202 is provided between the portion of the side wall 10a where the flow path 300a is located and the shielding member 23. The conductive member 202 is a plate formed of copper. However, the conductive member 202 may be any material with good thermal conductivity, and is not limited to copper, and may be a metal such as gold or aluminum.

[0074] The conductive member 202 has a cylindrical side portion 202a and an upper portion 202b that extends outward (toward the side wall 10a) over the entire circumference from the upper end of the side portion 202a. That is, the conductive member 202 is a cylindrical member having a substantially letter L-shaped cross section in the circumferential direction. The side portion 202a faces the side surface 10a1 of the portion of the side wall 10a where the flow path 300a is located. The upper portion 202b is disposed so as to contact the upper surface 10a2 of the side wall 10a on the top end side.

[0075] A buffer member 203 is sandwiched between the shielding member 23 and the conductive member 202. The buffer member 203 has conductivity and is made of a material softer than the shielding member 23 and the conductive member 202. The buffer member 203 is, for example, a sheet-like member formed of carbon. However, the material of the buffer member 203 may be any material softer than the conductive member 202, and is not limited to carbon, and metals such as indium can be used. Whether the buffer member 203 is a material softer than the conductive member 202 can be determined by the Young's modulus of each constituent material.

[0076] The buffer member 203 has a cylindrical side portion 203a and an upper portion 203b that extends outward (toward the side wall 10a) over the entire circumference from the upper end of the side portion 203a. That is, the buffer member 203 is a cylindrical member having a substantially L-shaped cross section in the circumferential direction. The side portion 203a faces the side surface 10a1 of the portion where the flow path 300a of the side wall 10a is located with the side portion 202a of the conductive member 202 interposed therebetween. The upper portion 203b is disposed on the upper surface 10a2 of the side wall 10a via the upper portion 202b of the conductive member 202 on the top end side. Thus, the upper portion of the shielding member 23 contacts the upper surface 10a2 of the side wall 10a via the conductive member 202 and the buffer member 203 and is grounded.

[0077] The conductive member 202 covers the entire outer side surface 23a1 of the side portion 23a and the entire lower surface 23b1 of the upper portion 23b of the shielding member 23 with the buffer member 203 interposed therebetween. If the shielding member 23 is in direct contact with the conductive member 202, metal particles may be generated due to the friction between the metals. In addition, due to the difference in surface roughness between the shielding member 23 and the conductive member 202, the thermal conductivity may decrease. In contrast, by sandwiching the buffer member 203, which is softer than these metals, between the shielding member 23 and the conductive member 202, the generation of metal particles due to friction can be suppressed. In addition, the adhesion between the shielding member 23 and the conductive member 202 can be improved, and the thermal conductivity can be increased. Thus, efficient heat transfer from the conductive member 202 to the shielding member 23 can be achieved, and the shielding member 23 can be stably maintained at a constant temperature.

[0078] A plurality of fixing members 201 are provided between the side wall 10a and the conductive member 202. The fixing member 201 has elasticity and conductivity, and fixes the conductive member 202 in a manner of pressing the conductive member 202 toward the shielding member 23.

[0079] In the present embodiment, three fixing members 201 are provided in a vertical arrangement. That is, the fixing member 201 has an upper fixing portion 201a, a lower fixing portion 201c located at a position lower than the upper fixing portion 201a, and an intermediate fixing portion 201b located between the upper fixing portion 201a and the lower fixing portion 201c, and a set of fixing portions provided at overlapping positions in a top view.

[0080] Figure 4 It is a diagram showing Figure 1 the A - A cross section of. A flow path 300a is provided over the entire circumference inside the side wall 10a. In addition, a shielding member 23 is provided over the entire circumference near the flow path 300a via the conductive member 202 and the buffer member 203.

[0081] In Figure 4In this case, the fixing member 201 includes four sets of fixing portions, and the four sets of fixing portions are arranged in the circumferential direction along the side wall 10a. However, the number of sets of fixing portions is not limited to four sets, and as long as there are multiple sets, it is acceptable. The fixing portions are preferably arranged evenly in the circumferential direction to improve the thermal conductivity and reduce the temperature change of the shielding member 23.

[0082] The fixing portions ( Figure 2 the upper fixing portion 201a, the middle fixing portion 201b, and the lower fixing portion 201c) each have a plurality of first elastic members 204 (204a, 204b, 204c) arranged radially toward the central axis Ax of the processing container 10 and a hollow second elastic member 205 (205a, 205b, 205c) formed to accommodate the plurality of first elastic members therein. The first elastic member 204 is formed of a metal such as aluminum, stainless steel, or Inconel alloy. The second elastic member 205 may be any material with good thermal conductivity, and is not limited to copper, and may also be a metal such as gold or aluminum. If the second elastic member 205 is formed of the same material as the conductive member 202, it has good thermal conductivity, and this is preferred.

[0083] The first elastic members 204a, 204b, 204c are metal springs formed in a spiral shape. However, the first elastic members 204a, 204b, 204c may have any structure that generates a pressing force for pressing the conductive member 202 against the shielding member 23, and is not limited to springs, and may also be elastic members such as leaf springs. The second elastic members 205a, 205b, 205c are, for example, formed by rolling a sheet of about 0.2 mm to 0.5 mm into a circular cross-section and connecting the two ends to form an internally hollow ring-shaped member.

[0084] The second elastic member 205a houses four first elastic members 204a therein. The four first elastic members 204a are arranged at equal intervals in the circumferential direction inside the ring-shaped second elastic member 205a. The second elastic member 205b houses four first elastic members 204b therein. The four first elastic members 204b are arranged at equal intervals in the circumferential direction inside the ring-shaped second elastic member 205b. The second elastic member 205c houses four first elastic members 204c therein. The four first elastic members 204c are arranged at equal intervals in the circumferential direction inside the ring-shaped second elastic member 205c.

[0085] The second elastic members 205a, 205b, 205c are each arranged in such a manner as to be in contact with the side wall 10a and the conductive member 202 throughout the entire circumference between the side wall 10a and the conductive member 202. Thereby, a high thermal conductivity can be ensured between the side wall 10a and the conductive member 202.

[0086] Thus, by utilizing the elastic force of the first elastic member 204, the conductive member 202 is pressed against the shielding member 23 to fix the shielding member 23 without using threaded members. As a result, threaded members are not required, and protrusions such as threaded members are not exposed in the processing space 10s. Therefore, the particle source can be reduced.

[0087] In addition, the cooling structure 300 disposes the flow path 300a in a manner close to the shielding member 23. Moreover, by flowing the temperature control medium in the flow path 300a, the temperature of the shielding member 23 can be adjusted (such as cooling and heating) via the plurality of fixing members 201, the buffer member 203, and the conductive member 202.

[0088] The plurality of fixing members 201, the buffer member 203, and the conductive member 202 are formed of a metal with a relatively high thermal conductivity. Moreover, by utilizing the elastic force of the fixing member 201, the conductive member 202 is pressed against the shielding member 23. As a result, the thermal conductivity can be improved, and the heat dissipation efficiency of the shielding member 23 can be enhanced. At this time, sometimes the shielding member 23 cannot be sufficiently cooled by the cooling action of the cooling structure 300 only through the conductive member 202. Therefore, a buffer member 203 such as a carbon sheet with good thermal conductivity is provided between the conductive member 202 and the shielding member. With the above structure, the entire shielding member 23 and the conductive member 202 are always cooled, thereby preventing the temperature of the conductive member 202 from rising and stably adjusting the shielding member 23 to a constant temperature.

[0089] In the processing space 10s, during the processing process, plasma is generated from the gas supplied into the processing container 10 by the RF power supplied from the RF power source 137. In contrast, the second elastic member 205 is in close contact with the side wall 10a throughout the circumference. Therefore, compared with the first elastic member 204 such as a spring, the heat from the plasma can be discharged to the outside more efficiently. In addition, the second elastic member 205 houses the first elastic member 204. As a result, the first elastic member 204 can be prevented from being exposed to the plasma.

[0090] Alternatively, the first elastic member 204 penetrates the second elastic member 205, one end is fixed to the hole provided in the side wall 10a by threading, and the other end is fixed to the hole provided in the conductive member 202 by threading. Even in this case, the first elastic member 204 and the second elastic member 205 are covered by the shielding member 23, and protrusions such as the head of the threaded member are not exposed in the processing space 10s. By avoiding the protruding structure in this way, the generation of particles can be suppressed.

[0091] As described above, according to the substrate processing apparatus 1 of the present embodiment, the temperature of the shielding member 23 in the processing container 10 can be stabilized. In addition, by simplifying the structure 200 around the shielding member 23 and the maintenance components, the cost can be reduced.

[0092] [Modification Example]

[0093] Refer to Figure 5 Describe the structure 200a around the shielding member 23 of the modification example. Figure 5 It is a cross-sectional schematic view showing an example of the structure 200a around the shielding member 23 of the modification example.

[0094] In the structure 200a around the shielding member 23 of the modification example, the conductive member 202 only has a cylindrical side portion and does not have an upper portion. In addition, the buffer member 203 only has a cylindrical side portion and does not have an upper portion. Other structures of the substrate processing apparatus 1 are the same as those of the substrate processing apparatus 1 in the above-described embodiment.

[0095] The conductive member 202 covers the outer side surface 23a1 of the side portion 23a of the shielding member 23 over the entire circumference with the buffer member 203 interposed therebetween.

[0096] Therefore, in the substrate processing apparatus of the modification example, the upper portion 23b of the shielding member 23 contacts the upper surface 10a2 of the portion where the flow path 300a of the side wall 10a is located without passing through the conductive member 202 and the buffer member 203.

[0097] In addition, the upper portion 23b of the shielding member 23 may not contact the upper surface 10a2 of the side wall 10a but may be located above the upper surface 10a2. That is, the lower surface 23b1 of the upper portion 23b of the shielding member 23 may or may not contact the upper surface 10a2 of the side wall 10a.

[0098] As described above, according to the substrate processing apparatus of this modification example, by using the structure 200a around the shielding member 23, the temperature of the shielding member 23 in the processing container 10 can be stabilized. In addition, by simplifying the structure 200a around the shielding member 23 and the maintenance components, cost reduction can be achieved.

[0099] [Others]

[0100] The substrate processing apparatus 1 is not limited to Figure 1 a sputtering apparatus such as those shown, and may also be an ALD (Atomic Layer Deposition) apparatus, a CVD (Chemical Vapor Deposition) apparatus. The substrate processing apparatus 1 can also be applied to any one of a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus, a microwave plasma processing apparatus, a VHF wave plasma processing apparatus, and a UHF wave plasma processing apparatus.

[0101] In addition, in the above-described embodiments and the like, the single-substrate processing apparatus 1 that processes the substrate W one by one has been described, but the present disclosure is not limited thereto. For example, the substrate processing apparatus may be a batch-type apparatus that processes a plurality of substrates W at once. In addition, for example, the substrate processing apparatus may be a semi-batch-type apparatus that causes a plurality of substrates W disposed on a rotating table in a processing container to revolve under the action of the rotating table and sequentially pass through a region for supplying the first gas and a region for supplying the second gas to process the substrate W. In addition, for example, the substrate processing apparatus may further be a multi-wafer film-forming apparatus having a plurality of mounting tables in one processing container.

[0102] Examples of the processing of the substrate W performed by the substrate processing apparatus 1 include film-forming processing, etching processing, and the like.

[0103] It should be considered that the substrate processing apparatus of the embodiments disclosed this time is illustrative in all respects and is not restrictive. The embodiments can be deformed and improved in various forms without departing from the appended claims and their gist. The matters described in the above-described multiple embodiments can also adopt other structures within a non-contradictory range, and can also be combined within a non-contradictory range.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: Handling containers; a temperature adjustment structure having a flow path inside a side wall of the processing container; a shielding member disposed in the processing container in a manner close to the flow path; a conductive member provided between a portion of the side wall where the flow path is located and the shielding member; a conductive buffer member sandwiched between the shielding member and the conductive member; as well as A plurality of fixing members are provided between the side wall and the conductive member, have elasticity and conductivity, and fix the conductive member in a manner of pressing the conductive member toward the shield member.

2. The substrate processing apparatus according to claim 1, wherein: The temperature adjustment structure adjusts the temperature of the shield member via the plurality of fixing members, the buffer member, and the conductive member by causing a temperature adjustment medium to flow through the flow path.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The flow path is formed over the entire circumference of the cylindrical shield member.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The shielding member has a cylindrical side portion between a processing space where plasma is generated by gas supplied into the processing container using RF power and the side wall, and an upper portion extending outward from the upper end of the side portion over the entire circumference, so as to prevent the multiple fixing members from being exposed to the processing space.

5. The substrate processing apparatus according to claim 4, wherein: The conductive member covers the outer side surface of the side portion and the lower side surface of the upper portion of the shield member over the entire circumference via the buffer member.

6. The substrate processing apparatus according to claim 5, wherein: The upper portion of the shield member is in contact with an upper surface of a portion of the side wall where the flow path is located, via the conductive member and the buffer member.

7. The substrate processing apparatus according to claim 4, wherein: The conductive member covers the outer side surface of the side portion of the shield member over the entire circumference via the buffer member.

8. The substrate processing apparatus according to claim 7, wherein: The upper portion of the shield member is located at a position that is in contact with or out of contact with an upper surface of a portion of the side wall where the flow path is located without interposing the conductive member and the buffer member.

9. The substrate processing apparatus according to claim 1 or 2, wherein: The plurality of fixing members include an upper fixing portion, a lower fixing portion located below the upper fixing portion, and an intermediate fixing portion located between the upper fixing portion and the lower fixing portion, and are provided at a position where the fixing portions overlap when viewed from above. A plurality of sets of the fixing portions are arranged along the side wall in a circumferential direction.

10. The substrate processing apparatus according to claim 9, wherein: Each of the upper fixing portion, the intermediate fixing portion, and the lower fixing portion includes a plurality of first elastic members arranged in a radial direction toward a central axis of the processing container, and a hollow second elastic member accommodating the plurality of first elastic members.

11. The substrate processing apparatus according to claim 10, wherein: The first elastic member is a spring.

12. The substrate processing apparatus according to claim 10, wherein: The second elastic member is sheet-shaped and formed in an annular shape.

13. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing device is any one of a capacitively coupled plasma processing device, an inductively coupled plasma processing device, a microwave plasma processing device, a VHF plasma processing device, and a UHF plasma processing device, and is any one of a single-wafer device that processes substrates one by one, a batch device that processes multiple substrates in batches, and a semi-batch device.

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