Plasma etching apparatus, adjusting method thereof, electronic apparatus, and storage medium

Abstract

The invention discloses plasma etching equipment, an adjusting method thereof, electronic equipment and a storage medium. The plasma etching apparatus includes: a cavity; the electrostatic chuck is positioned in the cavity; the gas leading-in device is positioned above the electrostatic chuck and is opposite to the electrostatic chuck; the first coil, the second coil, the third coil and the fourth coil are respectively arranged at the upper part, the lower part, the left part and the right part of the cavity wall of the cavity; the magnetic field control device is arranged outside the cavity, is connected with the first coil, the second coil, the third coil and the fourth coil, and is used for adjusting parameters of time-varying current passing through the first coil, the second coil, the third coil and the fourth coil; and the magnetic field intensity generated by the first coil, the second coil, the third coil and the fourth coil at specific positions in the cavity is changed so as to adjust the distribution of the plasma in the cavity. According to the invention, the local plasma density in the cavity is changed, and the uniformity of the wafer etching rate is improved.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of wafer manufacturing technology, and in particular, to a plasma etching device, an adjustment method thereof, an electronic device, and a storage medium. Background Art

[0002] In many existing semiconductor devices, plasma bombardment is used to remove the material on the surface of the wafer for etching. To increase the plasma bombardment density, the simplest method is to increase the radio frequency power. However, this will increase the ion bombardment of the electrode, causing particle contamination and thus reducing the service life of the electrode. Another method is to increase the magnetic field inside the cavity. The magnetic field causes the electrons to move in a spiral manner. Before the electrons hit the cavity wall or the electrode, they must move a longer distance, increasing the chance of ionization collision between the electrons and the molecules, thereby increasing the plasma density.

[0003] Due to the existence of facilities such as wafer transfer gates and pumping ports in the existing etching equipment, and the machining or installation errors of some internal components, it is very difficult to maintain symmetry inside the etching cavity, thus affecting the distribution density of the plasma in the cavity. If the plasma is unevenly distributed in the cavity, the etching of the wafer by the plasma will show a situation where the local rate is too fast and the local rate is too slow. There is currently no clear solution to this phenomenon of uneven etching rate. Summary of the Invention

[0004] The present invention provides a plasma etching device, an adjustment method thereof, an electronic device, and a storage medium, which change the local plasma density by changing the magnetic field distribution in the cavity and improve the uniformity of the wafer etching rate.

[0005] According to an aspect of the present invention, a plasma etching device is provided. The plasma etching device includes: a cavity; an electrostatic chuck located inside the cavity, and the electrostatic chuck is used to carry the wafer; a gas introduction device located above the electrostatic chuck and disposed opposite to the electrostatic chuck, and the gas introduction device is used to introduce reaction gas into the cavity; the plasma etching device further includes:

[0006] A first coil, a second coil, a third coil, and a fourth coil respectively disposed above, below, left, and right of the cavity wall of the cavity;

[0007] A magnetic field control device disposed outside the cavity, the magnetic field control device is connected to the first coil, the second coil, the third coil, and the fourth coil, and the magnetic field control device is used to adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil, and change the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity, so as to adjust the distribution of the plasma inside the cavity.

[0008] Optionally, the magnetic field control device includes: a first magnetic field control terminal, a second magnetic field control terminal, a third magnetic field control terminal, and a fourth magnetic field control terminal;

[0009] The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are respectively connected to the first coil, the second coil, the third coil, and the fourth coil. The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are respectively used to adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil, and change the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity, so as to adjust the distribution of the plasma inside the cavity.

[0010] Optionally, the first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are further used to apply a bias current to the first coil, the second coil, the third coil, and the fourth coil, and adjust the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity.

[0011] Optionally, the first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are further used to modify the phase difference between the time-varying currents passing through the first coil, the second coil, the third coil, and the fourth coil, so that the magnetic fields generated by the first coil, the second coil, the third coil, and the fourth coil in the cavity are synchronized or staggered from each other.

[0012] Optionally, the time-varying current is a square wave current or a sine wave current, and the parameters of the time-varying current include at least one of amplitude, phase, and frequency.

[0013] According to another aspect of the present invention, there is provided a method for adjusting a plasma etching device, which is executed by the plasma etching device according to any embodiment of the present invention. The method for adjusting the plasma etching device includes:

[0014] Put the wafer to be processed into the plasma etching device, and introduce a reaction gas into the plasma etching device;

[0015] Connect to a radio frequency power supply to ionize the reactive gas between the gas introduction device and the electrostatic chuck into plasma, and etch the wafer to be processed through the plasma to determine the etched morphology of the wafer after etching;

[0016] According to the etched morphology, adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil, and change the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity, so as to adjust the distribution of the plasma inside the cavity.

[0017] Optionally, the adjustment method of the plasma etching equipment further includes:

[0018] Apply a bias current to the first coil, the second coil, the third coil, and the fourth coil to adjust the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity.

[0019] Optionally, the adjustment method of the plasma etching equipment further includes:

[0020] Modify the phase difference between the time-varying currents passing through the first coil, the second coil, the third coil, and the fourth coil, so that the magnetic fields generated by the first coil, the second coil, the third coil, and the fourth coil in the cavity are synchronized or offset from each other.

[0021] According to another aspect of the present invention, there is also provided an electronic device, which includes:

[0022] One or more processors;

[0023] A memory for storing one or more programs;

[0024] When the one or more programs are executed by the one or more processors, the one or more processors implement the adjustment method of the plasma etching equipment as described in any embodiment of the present invention.

[0025] According to another aspect of the present invention, there is also provided a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, it implements the adjustment method of the plasma etching equipment as described in any embodiment of the present invention.

[0026] In the technical solution of the embodiment of the present invention, by adding four magnetic induction coils around the cavity wall, a time-varying current is passed into the magnetic induction coils to generate a magnetic field in the cavity. While increasing the plasma bombardment, the magnetic field control device adjusts the current-related parameters passing through each magnetic induction coil to change the magnetic field strength in the cavity, locally adjusts the plasma distribution inside the cavity, and improves the uniformity of wafer etching. In summary, the present invention solves the problem of uneven etching rate caused by uneven plasma distribution in the existing etching process.

[0027] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0029] Figure 1 is a schematic structural diagram of a plasma etching device provided according to an embodiment of the present invention;

[0030] Figure 2 is a schematic structural diagram of another plasma etching device provided according to an embodiment of the present invention;

[0031] Figure 3 is a schematic diagram of generating a magnetic field inside a cavity provided according to an embodiment of the present invention;

[0032] Figure 4 is a schematic diagram of adjusting the phase of different coil currents provided according to an embodiment of the present invention;

[0033] Figure 5 is a flowchart of a method for adjusting a plasma etching device provided according to an embodiment of the present invention;

[0034] Figure 6 is a schematic structural diagram of an electronic device provided according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0035] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0036] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0037] Figure 1 is a schematic structural diagram of a plasma etching device provided according to an embodiment of the present invention. Refer to Figure 1 , an embodiment of the present invention provides a plasma etching device. The plasma etching device includes: a chamber 10; an electrostatic chuck ( Figure 1 not shown in the figure) is located inside the chamber 10, and the electrostatic chuck is used to carry a wafer; a gas introduction device ( Figure 1 not shown in the figure) is located above the electrostatic chuck and is disposed opposite to the electrostatic chuck. The gas introduction device is used to introduce a reaction gas into the chamber 10; the plasma etching device further includes:

[0038] a first coil 20, a second coil 30, a third coil 40, and a fourth coil 50 respectively disposed above, below, left, and right of the chamber wall of the chamber 10;

[0039] a magnetic field control device 60 disposed outside the chamber 10. The magnetic field control device 60 is connected to the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50. The magnetic field control device 60 is used to adjust the parameters of the time-varying current passing through the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, and change the magnetic field intensity generated by the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 at specific positions inside the chamber 10, so as to adjust the distribution of the plasma inside the chamber 10.

[0040] Specifically, the specific position of the magnetic field control device 60 outside the cavity 10 is not limited in this embodiment, and theoretically any position is acceptable. Generally, in practical applications, the magnetic field control device 60 can be set at the bottom of the cavity 10. The first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 can be magnetic induction coils. Magnetic induction coils are arranged around the cavity wall of the cavity 10, and each magnetic induction coil is controlled by the magnetic field control device 60. By applying a time-varying current, a magnetic field is generated inside the cavity 10. The electrons inside the cavity 10 move in a spiral manner under the influence of the magnetic field, so the electron movement path is equivalently lengthened, increasing the collision probability, thereby increasing the plasma density inside the cavity 10. In order to control the plasma density inside the cavity 10, a corresponding magnetic field control device 60 is also provided. Essentially, this magnetic field control device 60 modifies the current passing through the magnetic induction coil to change the magnetic induction intensity at a specific position of the cavity 10, making the plasma distribution inside the cavity 10 more uniform.

[0041] The magnetic field inside the cavity 10 is the superposition of the magnetic fields generated by the magnetic induction coils around the cavity wall. The magnetic field generated by each magnetic induction coil is controlled by the magnetic field control device 60. This magnetic field control device 60 can control parameters such as the amplitude, frequency, and phase of the time-varying current passing through the magnetic induction coil, change the magnetic field intensity generated by the corresponding magnetic induction coil at a specific position inside the cavity 10, so that the overall magnetic field intensity changes, achieving a change in the distribution of the plasma inside the cavity 10. By changing the magnetic field distribution inside the cavity 10, the local plasma density is changed, and the wafer is etched by the plasma obtained through ionization, thereby improving the uniformity of wafer etching.

[0042] The technical solution of the embodiment of the present invention adds four magnetic induction coils around the cavity wall of the cavity. By passing a time-varying current into the magnetic induction coils, a magnetic field is generated inside the cavity. While increasing the plasma bombardment, the magnetic field control device adjusts the current-related parameters of each magnetic induction coil to change the magnetic field intensity inside the cavity, locally adjusting the plasma distribution inside the cavity and improving the uniformity of wafer etching. In summary, the present invention solves the problem of uneven etching rate caused by uneven plasma distribution in the existing etching process.

[0043] Figure 2 It is a schematic structural diagram of another plasma etching device provided according to an embodiment of the present invention. Figure 3 It is a schematic diagram of generating a magnetic field inside a cavity provided according to an embodiment of the present invention. Refer to Figure 2 and Figure 3 Optionally, the magnetic field control device 60 includes: a first magnetic field control terminal 61, a second magnetic field control terminal 62, a third magnetic field control terminal 63, and a fourth magnetic field control terminal 64.

[0044] The first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 are respectively connected to the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50. The first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 are respectively used to adjust the parameters of the time-varying current passing through the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, and change the magnetic field intensity generated by the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 at specific positions in the cavity 10, so as to adjust the distribution of the plasma inside the cavity 10.

[0045] Specifically, the magnetic field inside the cavity 10 is the superposition of the magnetic fields generated by the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 around the cavity wall. The magnetic field generated by each magnetic induction coil is controlled by its respective terminal. This terminal can control parameters such as the amplitude, frequency, and phase of the time-varying current passing through the coil, change the magnetic field intensity generated by the corresponding coil at a specific position in the cavity 10, so that the overall magnetic field intensity changes, achieving a change in the distribution of the plasma inside the cavity and improving the uniformity of wafer etching.

[0046] Continue to refer to Figure 2 , optionally, the first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 are also used to apply a bias current to the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, and adjust the magnetic field intensity generated by the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 at specific positions in the cavity 10.

[0047] Specifically, the cavity is the reaction cavity. The electrostatic chuck is located inside the cavity, and the electrostatic chuck is used to carry the wafer. The gas introduction device is located above the electrostatic chuck and is arranged opposite to the electrostatic chuck. The gas introduction device is used to introduce reaction gas into the cavity. The gas introduction device can be a gas shower head. The gas shower head serves as the upper electrode, and the lower electrode is arranged in the electrostatic chuck. The wafer can be placed on the electrostatic chuck through the wafer transfer portal, and then the reaction gas is introduced into the cavity through the gas introduction device, and the upper electrode and / or the lower electrode are connected to the RF power supply to ionize the introduced reaction gas into plasma, and the wafer is etched by the ionized plasma.

[0048] The first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 can also apply a bias current to the time-varying current passing through the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, better meeting the requirements for adjusting the magnetic field intensity in the cavity 10.

[0049] Figure 4 is a schematic diagram of adjusting the phases of different coil currents provided by an embodiment of the present invention. Refer to Figure 2 and Figure 4 , optionally, the first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 are further configured to modify the phase difference between the time-varying currents passing through the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, so that the magnetic fields generated by the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50 in the cavity 10 are synchronized or staggered from each other.

[0050] Specifically, if necessary, joint debugging can also be performed between different terminals by modifying the phases of the currents of different coils, so that the magnetic fields generated by the cavity 10 are synchronized or staggered from each other.

[0051] Optionally, the time-varying current is a square-wave current or a sine-wave current, and the parameters of the time-varying current include at least one of amplitude, phase, and frequency.

[0052] Specifically, the time-varying current passing through the induction coil can be a square-wave current or a sine-wave current. During the process, a sine-wave current can be continuously applied to the coil, and the relevant parameters of the sine-wave current, such as frequency, can also be adjusted according to the situation. In addition, a sine-wave current can also be applied only during a certain period according to the process.

[0053] Figure 5 is a flowchart of an adjustment method for a plasma etching apparatus provided by an embodiment of the present invention. Refer to Figure 5 , an embodiment of the present invention also provides an adjustment method for a plasma etching apparatus. The adjustment method for the plasma etching apparatus is executed by the plasma etching apparatus according to any embodiment of the present invention. The adjustment method for the plasma etching apparatus includes:

[0054] S110. Place the wafer to be processed into the plasma etching apparatus and introduce a reaction gas into the plasma etching apparatus.

[0055] Specifically, the cavity is the reaction cavity. The electrostatic chuck is located inside the cavity and is used to hold the wafer. The gas introduction device is located above the electrostatic chuck and is disposed opposite to the electrostatic chuck. The gas introduction device is used to introduce the reaction gas into the cavity.

[0056] S120. Connect a radio frequency power supply, ionize the reaction gas between the gas introduction device and the electrostatic chuck into plasma, and etch the wafer to be processed through the plasma to determine the etched morphology of the wafer after etching.

[0057] Specifically, the gas introduction device can be a gas shower head. The gas shower head serves as the upper electrode, and a lower electrode is provided in the electrostatic chuck. The wafer can be placed on the electrostatic chuck through the wafer transfer portal, and then reaction gas is introduced into the cavity through the gas introduction device. The upper electrode and / or the lower electrode are connected to a radio frequency power supply to ionize the introduced reaction gas into plasma, and the wafer is etched by the plasma obtained through ionization.

[0058] S130. According to the etching morphology, adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil to change the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity, so as to adjust the distribution of the plasma inside the cavity.

[0059] Specifically, in combination with Figure 1 , the magnetic field inside the cavity 10 is the superposition of the magnetic fields generated by the magnetic induction coils around the cavity wall. The magnetic field generated by each magnetic induction coil is controlled by the magnetic field control device 60. The magnetic field control device 60 can control parameters such as the amplitude, frequency, and phase of the time-varying current passing through the magnetic induction coil, change the magnetic field intensity generated by the corresponding magnetic induction coil at specific positions in the cavity 10, so that the overall magnetic field intensity changes, achieving a change in the distribution of the plasma inside the cavity 10, changing the local plasma density by changing the magnetic field distribution inside the cavity 10, and etching the wafer by the plasma obtained through ionization, thereby improving the uniformity of wafer etching.

[0060] Optionally, the adjustment method of the plasma etching equipment further includes:

[0061] Apply a bias current to the first coil, the second coil, the third coil, and the fourth coil to adjust the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at specific positions in the cavity.

[0062] Specifically, in combination with Figure 2 , the first magnetic field control terminal 61, the second magnetic field control terminal 62, the third magnetic field control terminal 63, and the fourth magnetic field control terminal 64 can also apply a bias current to the time-varying current passing through the first coil 20, the second coil 30, the third coil 40, and the fourth coil 50, better meeting the requirements for adjusting the magnetic field intensity inside the cavity 10.

[0063] Optionally, the adjustment method of the plasma etching equipment further includes:

[0064] Modify the phase difference between the time-varying currents passing through the first coil, the second coil, the third coil, and the fourth coil so that the magnetic fields generated by the first coil, the second coil, the third coil, and the fourth coil in the cavity are synchronized or offset from each other.

[0065] Specifically, in combination withFigure 2 , if necessary, joint debugging can also be carried out between different terminals. By modifying the phases of the currents of different coils, the magnetic fields generated by the cavity 10 can be synchronized or staggered from each other.

[0066] Figure 6 The structural schematic diagram of the electronic device 1 that can be used to implement the embodiments of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present invention described herein and / or claimed.

[0067] As Figure 6 shown, the electronic device 1 includes at least one processor 11, and a memory communicatively connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc. Among them, the memory stores a computer program executable by the at least one processor. The processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 into the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 1 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0068] Multiple components in the electronic device 1 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a magnetic disk, an optical disc, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 1 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0069] The processor 11 may be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, for example, the method for detecting the stability of the electrostatic chuck.

[0070] In some embodiments, the method for detecting the stability of the electrostatic chuck may be implemented as a computer program tangibly embodied in a computer-readable storage medium, such as the storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed onto the electronic device 1 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the method for detecting the stability of the electrostatic chuck described above may be executed. Alternatively, in other embodiments, the processor 11 may be configured to execute the method for detecting the stability of the electrostatic chuck by any other suitable means (e.g., by means of firmware).

[0071] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGA), application-specific integrated circuits (ASIC), application-specific standard products (ASSP), systems-on-a-chip (SOC), complex programmable logic devices (CPLD), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, the programmable processor can be a dedicated or general-purpose programmable processor, and can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit the data and instructions to the storage system, the at least one input device, and the at least one output device.

[0072] The computer program for implementing the method of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to the processor of a general-purpose computer, a special-purpose computer, or other programmable data processing devices, such that when the computer program is executed by the processor, the functions / operations specified in the flowchart and / or block diagram are implemented. The computer program can be executed entirely on the machine, partially on the machine, executed partially on the machine as an independent software package and partially on a remote machine, or executed entirely on a remote machine or server.

[0073] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0074] To provide for interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other kinds of devices can also be used to provide for interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, speech input, or tactile input).

[0075] The systems and techniques described herein can be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0076] A computing system may include a client and a server. The client and the server are generally far from each other and usually interact via a communication network. The relationship between the client and the server is created by computer programs running on respective computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or a cloud host, which is a host product in the cloud computing service system, solving the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0077] It should be understood that various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0078] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A plasma etching device, comprising: Cavity; An electrostatic chuck is located inside the cavity, and the electrostatic chuck is used to carry a wafer; The gas introduction device is located above the electrostatic chuck and is arranged opposite to the electrostatic chuck. The gas introduction device is used to introduce the reaction gas into the cavity; characterized in that it also includes: A first coil, a second coil, a third coil and a fourth coil are respectively arranged on the upper side, the lower side, the left side and the right side of the cavity wall; A magnetic field control device is arranged outside the cavity, and is connected to the first coil, the second coil, the third coil, and the fourth coil. The magnetic field control device is used to adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil, and change the magnetic field intensity generated by the first coil, the second coil, the third coil, and the fourth coil at a specific position in the cavity, so as to adjust the distribution of plasma inside the cavity.

2. The device according to claim 1, characterized in that The magnetic field control device comprises: a first magnetic field control terminal, a second magnetic field control terminal, a third magnetic field control terminal and a fourth magnetic field control terminal; The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are respectively connected to the first coil, the second coil, the third coil, and the fourth coil. The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are respectively used to adjust the parameters of the time-varying current passing through the first coil, the second coil, the third coil, and the fourth coil, and change the magnetic field strength generated by the first coil, the second coil, the third coil, and the fourth coil at a specific position in the cavity, so as to adjust the distribution of plasma inside the cavity.

3. The device according to claim 2, characterized in that The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal and the fourth magnetic field control terminal are also used to apply a bias current to the first coil, the second coil, the third coil and the fourth coil, and adjust the magnetic field strength generated by the first coil, the second coil, the third coil and the fourth coil at a specific position in the cavity.

4. The device according to claim 2, characterized in that The first magnetic field control terminal, the second magnetic field control terminal, the third magnetic field control terminal, and the fourth magnetic field control terminal are also used to modify the phase difference between the time-varying currents passing through the first coil, the second coil, the third coil, and the fourth coil, so that the magnetic fields generated by the first coil, the second coil, the third coil, and the fourth coil in the cavity are synchronized or staggered with each other.

5. The device according to claim 1, characterized in that The time-varying current is a square wave current or a sine wave current, and the parameters of the time-varying current include: at least one of amplitude, phase and frequency.

6. A method for adjusting a plasma etching device, characterized in that: The method is performed by the plasma etching equipment according to any one of claims 1 to 5, wherein the adjustment method of the plasma etching equipment comprises: Placing a wafer to be processed into the plasma etching device, and introducing a reaction gas into the plasma etching device; Connecting to a radio frequency power source, ionizing the reaction gas between the gas introduction device and the electrostatic chuck into plasma, etching the wafer to be processed by the plasma, and determining the etching morphology of the wafer after etching; According to the etching morphology, the parameters of the time-varying current passing through the first coil, the second coil, the third coil and the fourth coil are adjusted to change the magnetic field strength generated by the first coil, the second coil, the third coil and the fourth coil at a specific position in the cavity to adjust the distribution of plasma inside the cavity.

7. The method according to claim 6, characterized in that The adjustment method of the plasma etching equipment also includes: A bias current is applied to the first coil, the second coil, the third coil and the fourth coil, and the magnetic field strength generated by the first coil, the second coil, the third coil and the fourth coil at a specific position in the cavity is adjusted.

8. The method according to claim 6, characterized in that The adjustment method of the plasma etching equipment also includes: The phase difference between the time-varying currents passing through the first coil, the second coil, the third coil and the fourth coil is modified so that the magnetic fields generated by the first coil, the second coil, the third coil and the fourth coil in the cavity are synchronized or staggered with each other.

9. An electronic device, characterized in that: include: one or more processors; A memory for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the adjustment method of the plasma etching equipment as described in claims 6-8.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the adjustment method of the plasma etching equipment according to claims 6 to 8 is implemented.

Images