Method of treating substrate

Abstract

A method of treating a substrate is provided. The method includes: providing a substrate on a stage of a substrate processing apparatus; and processing the substrate on the stage. Processing a substrate includes: providing a source power to a substrate processing apparatus; and providing the bias power to the substrate processing apparatus. Providing bias power to a substrate processing apparatus includes: providing a first non-sine wave to a plasma electrode of a stage; and providing the second non-sine wave to an edge electrode of the stage. A duty cycle of the second non-sine wave is different from a duty cycle of the first non-sine wave.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2023-0165381 filed on November 24, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a method for processing a substrate, and more particularly, to a method for processing a substrate by independently controlling plasma on an edge region. Background Art

[0003] Semiconductor devices can be manufactured by various processes. For example, semiconductor devices can be manufactured by performing photolithography, etching, deposition, plating, etc. on a substrate. Plasma can be used in etching and deposition processes. Radio frequency (RF) power can be applied to substrate processing equipment to generate and / or control plasma. The behavior of plasma can vary depending on the form of RF power. Summary of the invention

[0004] One or more example embodiments provide a method of treating a substrate capable of controlling plasma on an edge region.

[0005] One or more example embodiments may also provide a method of treating a substrate capable of controlling the density of plasma on a central region and the density of plasma on an edge region independently of each other.

[0006] One or more example embodiments may also provide a method of treating a substrate, which is capable of improving a yield of an etching process performed on the substrate.

[0007] According to one aspect of the example embodiments, a method for processing a substrate includes: providing a substrate on a stage of a substrate processing device; and processing the substrate on the stage. Processing the substrate includes: providing source power to the substrate processing device; and providing bias power to the substrate processing device. Providing the bias power to the substrate processing device includes: providing a first non-sinusoidal wave to a plasma electrode of the stage; and providing a second non-sinusoidal wave to an edge electrode of the stage. The duty cycle of the second non-sinusoidal wave is different from the duty cycle of the first non-sinusoidal wave.

[0008] According to another aspect of the example embodiment, a method of processing a substrate includes: providing a substrate on a stage of a substrate processing apparatus; providing source power to the substrate processing apparatus according to a first macropulse; providing a first non-sinusoidal wave having a first micropulse to the substrate processing apparatus; and providing a second non-sinusoidal wave having a second micropulse to the substrate processing apparatus. The duty cycle of the second micropulse is less than the duty cycle of the first micropulse.

[0009] According to another aspect of the example embodiment, a method for processing a substrate includes: providing source power to a substrate processing device; providing a first non-sinusoidal wave to the substrate processing device; and providing a second non-sinusoidal wave to the substrate processing device. The first non-sinusoidal wave includes: a first on-period, in which a first voltage is applied to the substrate processing device; and a first off-period, in which a second voltage is applied to the substrate processing device. The second non-sinusoidal wave includes: a second on-period, in which a third voltage is applied to the substrate processing device in the second on-period; and a second off-period, in which a fourth voltage is applied to the substrate processing device in the second off-period. The first on-period includes the second on-period. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other aspects and features will become more apparent from the following description of example embodiments with reference to the accompanying drawings.

[0011] Figure 1 is a cross-sectional view illustrating a substrate processing apparatus according to some example embodiments.

[0012] Figure 2 is an enlarged cross-sectional view of a substrate processing apparatus according to some example embodiments.

[0013] Figure 3 is a flow chart illustrating a method of processing a substrate according to some example embodiments.

[0014] Figures 4 to 8 2 is a view illustrating a method of processing a substrate according to some example embodiments.

[0015] Fig. 9 is a diagram illustrating power applied to a substrate processing apparatus in a method of processing a substrate according to some example embodiments.

[0016] Fig.10 is a diagram illustrating a first bias power applied to a substrate processing apparatus in a method of processing a substrate according to some example embodiments.

[0017] Fig.11 is a diagram illustrating a second bias power applied to a substrate processing apparatus in a method of processing a substrate according to some example embodiments. DETAILED DESCRIPTION

[0018] Hereinafter, example embodiments will be described in detail with reference to the accompanying drawings. Throughout the specification, the same reference numerals or the same reference designators may represent the same components or elements. It will be understood that when an element or layer is referred to as "on" another element or layer, "connected to" or "bonded to" another element or layer, the element or layer may be directly on the other element or layer, directly connected to or directly to the other element or layer, or there may be an intermediate element or layer. In contrast, when an element is referred to as "directly on" another element or layer, "directly connected to" or "directly bonded to" another element or layer, there is no intermediate element or layer. The embodiments described herein are example embodiments, and therefore, the present disclosure is not limited thereto, and may be implemented in various other forms. It is not excluded that each example embodiment provided in the following description is associated with one or more features of another example or another embodiment that is also provided herein or is not provided herein but is consistent with the present disclosure.

[0019] Figure 1 is a cross-sectional view illustrating a substrate processing apparatus according to some example embodiments.

[0020] In the drawings, reference indicator D1 may represent a first direction, reference indicator D2 may represent a second direction intersecting the first direction, and reference indicator D3 may represent a third direction intersecting both the first direction D1 and the second direction D2. The first direction D1 may be referred to as a vertical direction. In addition, each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.

[0021] Reference Figure 1 , a substrate processing device SA may be provided. The substrate processing device SA may be a device for performing a process on a substrate by using plasma. More specifically, the substrate processing device SA may be a device for performing an etching process on a substrate by using plasma. The term "substrate" may refer to a silicon (Si) wafer, but example embodiments are not limited thereto. The substrate processing device SA may be configured to generate plasma by at least one of various methods. For example, the substrate processing device SA may be a capacitively coupled plasma (CCP) device and / or an inductively coupled plasma (ICP) device. As an example, for the purpose of ease and convenience of explanation and illustration, the substrate processing device SA will be described as a CCP device. The substrate processing device SA may include a process chamber 1, a stage 7, a shower head 3, a direct current (DC) power supply 2, a source power supply 51, a first bias power supply 53, a second bias power supply 55, a vacuum pump VP, and a gas supply device GS.

[0022] The process chamber 1 may provide a process space 1h. A process may be performed on a substrate provided in the process space 1h. The process space 1h may be separated from an external space. While the process is performed on the substrate, the process space 1h may be in a substantial vacuum state. The process chamber 1 may have, but is not limited to, a cylindrical shape.

[0023] The stage 7 may be located in the process chamber 1. In this regard, the stage 7 may be located in the process space 1h. The stage 7 may be configured to support and / or hold a substrate. In a state where the substrate is placed on the stage 7, a process may be performed on the substrate. The stage 7 will be described in more detail below.

[0024] The shower head 3 may be located in the process chamber 1. In this regard, the shower head 3 may be located in the process space 1h. The shower head 3 may be spaced apart from the stage 7 and may be above the stage 7. The gas supplied from the gas supply device GS may be uniformly supplied into the process space 1h through the shower head 3.

[0025] The DC power supply 2 may be configured to apply DC power to the stage. The substrate may be fixed or held at a specific position on the stage 7 by the DC power applied from the DC power supply 2.

[0026] The source power supply 51 may be configured to apply source power to the stage 7. More specifically, the source power supply 51 may apply source power to the stage 7 in the form of radio frequency (RF) power. Thus, plasma may be generated in the process space 1h. This will be described in more detail below.

[0027] The first bias power supply 53 may be configured to apply a first bias power to the stage 7. More specifically, the first bias power supply 53 may apply power to the stage 7 in the form of a non-sinusoidal wave. For example, the first bias power supply 53 may apply power to the stage 7 in the form of a square wave. By controlling the application of power via the first bias power supply 53, the plasma in the process space 1h may be controlled. This will be described in more detail below.

[0028] The second bias power supply 55 may be configured to apply a second bias power to the stage 7. More specifically, the second bias power supply 55 may apply power to the stage 7 in the form of a non-sinusoidal wave. For example, the second bias power supply 55 may apply power to the stage 7 in the form of a square wave. By controlling the application of power via the second bias power supply 55, the plasma in the process space 1h may be controlled. This will be described in more detail below.

[0029] A vacuum pump VP may be connected to the process space 1h. While a process is performed on a substrate, a vacuum pressure may be applied to the process space 1h by the vacuum pump VP.

[0030] The gas supply device GS may be configured to supply gas into the process space 1h. To achieve this, the gas supply device GS may include a gas tank, a compressor, and a valve. A portion of the gas supplied into the process space 1h by the gas supply device GS may be formed into plasma.

[0031] Figure 2 According to some example embodiments Figure 1 An enlarged cross-sectional view of area "X".

[0032] Reference Figure 2 The stage 7 may be configured to fix or hold the substrate at a specific position by using an electrostatic force. In this regard, the stage 7 may include an electrostatic chuck (ESC). The stage 7 may include a chuck body 71, a chuck electrode 73, a plasma electrode 75, an edge electrode 77, and a heater 79.

[0033] The substrate may be provided on the chuck body 71. The chuck body 71 may fix or hold the substrate at a specific position. The chuck body 71 may have a cylindrical shape. The chuck body 71 may include, but is not limited to, ceramic. The substrate may be provided on the top surface of the chuck body 71. A focusing ring FR and / or an edge ring may surround the chuck body 71. Optionally, the focusing ring FR and / or the edge ring may be located on the chuck body 71. The chuck body 71 may define one or more cooling holes 71h. Cooling water may flow through the cooling holes 71h. The cooling water in the cooling holes 71h may absorb heat from the chuck body 71.

[0034] The chuck electrode 73 may be located in the chuck body 71. The chuck electrode 73 may be located above the plasma electrode 75. DC power may be applied to the chuck electrode 73. More specifically, the DC power supply 2 may be configured to apply DC power to the chuck electrode 73. The substrate on the chuck body 71 may be fixed or held at a specific position by the DC power applied to the chuck electrode 73. The chuck electrode 73 may include, but is not limited to, aluminum (Al).

[0035] The plasma electrode 75 may be located in the chuck body 71. The plasma electrode 75 may include aluminum (Al). The plasma electrode 75 may have a disc shape, but example embodiments are not limited thereto. Source power and / or bias power may be applied to the plasma electrode 75. More specifically, source power and / or first bias power may be applied to the plasma electrode 75. To this end, the plasma electrode 75 may be electrically connected to the first bias power supply 53. This will be described in more detail below.

[0036] The edge electrode 77 may surround the plasma electrode 75. The edge electrode 77 may have a ring shape. The edge electrode 77 may be located below the focusing ring FR. The edge electrode 77 may include aluminum (Al), but example embodiments are not limited thereto. Source power and / or bias power may be applied to the edge electrode 77. More specifically, source power and / or second bias power may be applied to the edge electrode 77. To this end, the edge electrode 77 may be electrically connected to the second bias power supply 55. This will be described in more detail below.

[0037] Heater 79 can be located in chuck body 71. Heater 79 can be located between chuck electrode 73 and plasma electrode 75. Heater 79 can include a heating wire. For example, heater 79 can include a concentric heating wire. Heater 79 can emit heat and can be used to increase the temperature of chuck body 71.

[0038] Figure 3 is a flow chart illustrating a method of processing a substrate according to some example embodiments.

[0039] Reference Figure 3 , a method for treating a substrate (SS) can be provided. The method for treating a substrate (SS) can be used with reference Figure 1 and Figure 2 The method (SS) for processing a substrate may include providing a substrate in a substrate processing apparatus (S1) and processing the substrate (S2).

[0040] Processing the substrate (S2) may include supplying a process gas into a process space of a substrate processing apparatus (S21), applying a source power to the substrate processing apparatus (S22), and applying a bias power to the substrate processing apparatus (S23).

[0041] Applying the bias power to the substrate processing device ( S23 ) may include applying a first non-sinusoidal wave ( S231 ) and applying a second non-sinusoidal wave ( S232 ).

[0042] In the following, reference will be made to Figures 4 to 8 The method of treating a substrate (SS) is described in more detail.

[0043] Figures 4 to 8 is a view illustrating a method of processing a substrate according to some example embodiments, and may be Figure 3 The flowchart corresponds to .

[0044] Reference Figure 3 , Figure 4 and Figure 5, providing a substrate in the substrate processing apparatus (S1) may include providing a substrate WF on a stage 7. The substrate WF may be provided on a top surface of a chuck body 71. When DC power (e.g., DC voltage) is applied to a chuck electrode 73 from a DC power source 2, the substrate WF may be fixed or held at a specific position on the stage 7 by an electrostatic force.

[0045] Reference Figure 3 and Figure 6 Supplying the process gas (S21) may include supplying the process gas PG into the process chamber 1 through the gas supply device GS. The process gas PG supplied from the gas supply device GS may be dispersed into the process space 1h of the process chamber 1 through the shower head 3 and then may be supplied onto the substrate WF.

[0046] Figure 8 According to some example embodiments Figure 7 An enlarged cross-sectional view of area "Z". Figure 3 , Figure 7 and Figure 8 , applying source power to the substrate processing device (S22) may include applying source power SP to the stage 7 through the source power supply 51. When the source power SP is applied to the stage 7, the plasma PL may be generated in the process space 1h. The source power SP may be a sine wave. More specifically, the source power SP may be RF power. For example, the frequency of the source power SP may be in the range of about 20 MHz to about 80 MHz, but example embodiments are not limited thereto. The source power SP may be supplied in the form of a first macro pulse. In this regard, RF power having a frequency of about 20 MHz to about 80 MHz may be supplied in the form of a first macro pulse. This will be described in more detail below.

[0047] Applying the first non-sinusoidal wave (S231) may include applying the first non-sinusoidal wave BP1 to the plasma electrode 75 through the first bias power supply 53. By controlling the first non-sinusoidal wave BP1 applied to the plasma electrode 75, the plasma PL in the process space 1h may be controlled. The first non-sinusoidal wave BP1 may have a first micropulse. The first non-sinusoidal wave BP1 may be supplied in the form of a second macropulse. In this regard, the first non-sinusoidal wave BP1 having the first micropulse may be supplied in the form of a second macropulse. This will be described in more detail below.

[0048] Applying the second non-sinusoidal wave (S232) may include applying the second non-sinusoidal wave BP2 to the edge electrode 77 through the second bias power supply 55. By controlling the second non-sinusoidal wave BP2 applied to the edge electrode 77, the plasma PL in the process space 1h may be controlled. More specifically, when the second non-sinusoidal wave BP2 is applied to the edge electrode 77, the plasma PL in the edge region of the process space 1h may be controlled. The edge region of the process space 1h may refer to a region on the focus ring FR, but example embodiments are not limited thereto. The second non-sinusoidal wave BP2 may have a second micropulse. The second non-sinusoidal wave BP2 may be supplied in the form of a second macropulse. In this regard, the second non-sinusoidal wave BP2 having the second micropulse may be supplied in the form of a second macropulse. This will be described in more detail below.

[0049] Fig. 9 is a diagram illustrating power applied to a substrate processing apparatus in a method of processing a substrate according to one or more example embodiments, and may correspond to Figure 3 .

[0050] Reference Fig. 9 , the horizontal axis can represent time, and the vertical axis can represent power or voltage.

[0051] As discussed above, the source power SP may be RF power having a frequency in the range of about 20 MHz to about 80 MHz, and may be supplied in the form of a first macro pulse. The first macro pulse may have a form in which a macro on-duration AP1 (RF power is transmitted during the macro on-duration AP1) and a macro off-duration AP2 (RF power is not transmitted during the macro off-duration AP2) are repeated.

[0052] Each of the first non-sinusoidal wave (i.e., the first bias power) BP1 and the second non-sinusoidal wave (i.e., the second bias power) BP2, which may be square waves as discussed above, may be supplied in the form of a second macro pulse. The second macro pulse may be substantially the same as or substantially similar to the first macro pulse. For example, the second macro pulse may have a form in which a macro on-duration AP1 (in which the first non-sinusoidal wave BP1 and the second non-sinusoidal wave BP2 are supplied) and a macro off-duration AP2 (in which the first non-sinusoidal wave BP1 and the second non-sinusoidal wave BP2 are not supplied) are repeated.

[0053] Reference Figure 3 and Fig. 9 , applying the source power to the substrate processing device ( S22 ), applying the first non-sinusoidal wave ( S231 ), and applying the second non-sinusoidal wave ( S232 ) may be performed simultaneously, but example embodiments are not limited thereto.

[0054] Fig.10 and Fig.11is a diagram illustrating a first bias power and a second bias power according to some example embodiments. Fig.10 It is shown that according to Figure 3 A flowchart of a method of processing a substrate in which a first bias power is applied to a substrate processing device, and Fig.11 It is shown that according to Figure 3 A flowchart of a method of processing a substrate in which a second bias power is applied to a substrate processing apparatus.

[0055] Reference Fig.10 , the first non-sinusoidal wave BP1 may be a non-sinusoidal wave in the form of a first micropulse, in which the first on-duration X1 and the first off-duration X2 are repeatedly performed. The frequency of the first micropulse may be in the range of about 200 kHz to about 600 kHz. The first on-duration X1 may be a duration for applying a negative voltage. The voltage applied in the first on-duration X1 may be referred to as a first voltage. In this regard, the first voltage may be a negative voltage. The sum of a single first on-duration X1 and a single first off-duration X2 may be referred to as a first period PE1. In this regard, the first period PE1 may be the sum of the duration of a single first on-duration X1 and the duration of a single first off-duration X2.

[0056] Reference Fig.11 , the second non-sinusoidal wave BP2 may be a non-sinusoidal wave in the form of a second micropulse, in which the second on-duration X3 and the second off-duration X4 are repeatedly performed. The frequency of the second micropulse may be in the range of about 200 kHz to about 600 kHz. The second on-duration X3 may be a duration for applying a negative voltage. The voltage applied in the second on-duration X3 may be referred to as a second voltage. In this regard, the second voltage may be a negative voltage. The sum of a single second on-duration X3 and a single second off-duration X4 may be referred to as a second period PE2. In this regard, the second period PE2 may be the sum of the duration of a single second on-duration X3 and the duration of a single second off-duration X4.

[0057] Reference Fig.10 and Fig.11 , the first period PE1 may be substantially the same as or substantially similar to the second period PE2. In this regard, the period of the first micropulse may be substantially the same as or substantially similar to the period of the second micropulse.

[0058] The duty ratio (or duty cycle) of the first non-sinusoidal wave BP1 may be constant over time. In this regard, the ratio of the first on-duration X1 to the first off-duration X2 may not change over time. In addition, the duty ratio of the second non-sinusoidal wave BP2 may be constant over time. In this regard, the ratio of the second on-duration X3 to the second off-duration X4 may not change over time.

[0059] The duty cycle of the first non-sinusoidal wave BP1 may be different from the duty cycle of the second non-sinusoidal wave BP2. In this regard, the ratio of the second on-duration X3 to the second off-duration X4 may be different from the ratio of the first on-duration X1 to the first off-duration X2. For example, the duty cycle of the second non-sinusoidal wave BP2 may be smaller than the duty cycle of the first non-sinusoidal wave BP1. By differently controlling the duty cycle of the first non-sinusoidal wave BP1 and the duty cycle of the second non-sinusoidal wave BP2, the plasma electrode 75 (see Figure 8 ) on the plasma PL (see Figure 8 ) and edge electrodes 77 (see Figure 8 ) are controlled differently from each other. In this regard, the plasma PL on the center region and the plasma PL on the edge region can be controlled separately.

[0060] Reference Fig. 9 , Fig.10 and Fig.11 , the second on-duration time X3 may overlap with the first on-duration time X1 in time. For example, the second on-duration time X3 may be included in the first on-duration time X1. More specifically, the start time point t3 of the second on-duration time X3 may be the same as the start time point t1 of the first on-duration time X1 or later than the start time point t1 of the first on-duration time X1. The end time point t4 of the second on-duration time X3 may be the same as the end time point t2 of the first on-duration time X1 or earlier than the end time point t2 of the first on-duration time X1.

[0061] In the above example embodiments, each of the duty cycle of the first non-sinusoidal wave BP1 and the duty cycle of the second non-sinusoidal wave BP2 is constant over time, but example embodiments are not limited thereto. In some example embodiments, the duty cycle of the second non-sinusoidal wave BP2 may change over time. For example, the duty cycle of the second non-sinusoidal wave BP2 may decrease or increase over time. Alternatively, the voltage of the second non-sinusoidal wave BP2 may change over time. For example, the peak amplitude of the second non-sinusoidal wave BP2 may change over time.

[0062] According to the method for processing a substrate according to the example embodiment, the plasma on the edge region can be precisely controlled. More specifically, the plasma on the central region and the plasma on the edge region can be controlled independently of each other. Therefore, the density of the plasma on the edge region can be adjusted separately. As a result, the etching process performed on the edge region of the substrate can be precisely controlled. In this regard, the yield of the etching process of the substrate can be improved.

[0063] According to the method of treating a substrate according to example embodiments, plasma on an edge region may be controlled.

[0064] According to the method of treating a substrate according to example embodiments, the density of plasma on the center region and the density of plasma on the edge region may be controlled independently of each other.

[0065] According to the method of treating a substrate according to example embodiments, the yield of an etching process performed on a substrate may be improved.

[0066] While aspects of the example embodiments have been particularly shown and described, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A method for treating a substrate, the method comprising: providing a substrate on a stage of a substrate processing apparatus; as well as Treat the substrate on the table. The step of processing the substrate includes: providing source power to a substrate processing device; and providing bias power to the substrate processing equipment, The step of providing bias power to the substrate processing equipment includes: providing a first non-sinusoidal wave to a plasma electrode of the stage; and providing a second non-sinusoidal wave to an edge electrode of the stage, and The duty cycle of the second non-sinusoidal wave is different from the duty cycle of the first non-sinusoidal wave.

2. The method according to claim 1, wherein: The edge electrode has a ring shape surrounding the plasma electrode.

3. The method according to claim 1, wherein: The substrate processing apparatus further includes a focusing ring surrounding the substrate provided on the stage, and Among them, the edge electrode is located below the focusing ring.

4. The method according to claim 1, wherein: Each of the first non-sinusoidal wave and the second non-sinusoidal wave is a square wave.

5. The method according to claim 1, wherein: The frequency of the second non-sinusoidal micropulses is in the range of 200 kHz to 600 kHz.

6. The method according to claim 1, wherein: The first non-sinusoidal micropulses and the second non-sinusoidal micropulses have the same period.

7. The method according to claim 1, wherein: The period of the first non-sinusoidal wave includes: a first on-time duration during which the first voltage is applied to the plasma electrode; and a first off-time duration, the second voltage being applied to the plasma electrode during the first off-time duration, Wherein, the period of the second non-sinusoidal wave includes: a second on-time duration during which the third voltage is applied to the edge electrode; and a second off-time duration, the fourth voltage being applied to the edge electrode during the second off-time duration, wherein the third voltage is a negative voltage, and The duty cycle of the second non-sinusoidal wave is smaller than the duty cycle of the first non-sinusoidal wave.

8. The method according to claim 1, wherein: Each of the duty cycle of the first non-sinusoidal wave and the duty cycle of the second non-sinusoidal wave is constant.

9. The method according to claim 8, wherein: The period of the first non-sinusoidal wave includes: a first on-time duration during which the first voltage is applied to the plasma electrode; and a first off-time duration, the second voltage being applied to the plasma electrode during the first off-time duration, Wherein, the period of the second non-sinusoidal wave includes: a second on-time duration during which the third voltage is applied to the edge electrode; and a second off-duration, the fourth voltage being applied to the edge electrode during the second off-duration, and Therein, the second switch-on period overlaps with the first switch-on period in terms of time.

10. The method according to claim 9, wherein: The second on-time period starts at the same time as the first on-time period or starts later than the first on-time period, and In this case, the second switch-on period ends together with the first switch-on period or before the first switch-on period.

11. The method according to claim 1, wherein: The step of providing a second non-sinusoidal wave includes varying a duty cycle or a peak amplitude of the second non-sinusoidal wave over time.

12. The method according to claim 1, wherein: The step of providing source power to the substrate processing apparatus includes providing source power to the stage.

13. A method for treating a substrate, the method comprising: providing a substrate on a stage of a substrate processing apparatus; providing source power to a substrate processing device according to a first macro pulse; providing a first non-sinusoidal wave having a first micropulse to a substrate processing apparatus; as well as providing a second non-sinusoidal wave having a second micropulse to the substrate processing apparatus, The duty cycle of the second micropulse is smaller than the duty cycle of the first micropulse.

14. The method according to claim 13, wherein: A period during which the first non-sinusoidal wave is provided corresponds to a period during which the second non-sinusoidal wave is provided.

15. The method according to claim 13, wherein: The frequency of the first micropulses is in the range of 200 kHz to 600 kHz.

16. The method according to claim 13, wherein: The first micropulse and the second micropulse have the same period.

17. The method according to claim 13, wherein: The step of providing source power, the step of providing a first non-sinusoidal wave, and the step of providing a second non-sinusoidal wave are performed simultaneously.

18. The method according to claim 13, wherein: The step of providing source power includes providing a sine wave to the substrate processing equipment, and The frequency of the sine wave is in the range of 20 MHz to 80 MHz.

19. The method according to claim 13, wherein: The step of providing a first non-sinusoidal wave comprises providing the first non-sinusoidal wave to a plasma electrode of a substrate processing apparatus, and The step of providing the second non-sinusoidal wave includes providing the second non-sinusoidal wave to an edge electrode of a substrate processing device.

20. A method of treating a substrate, the method comprising: providing source power to a substrate processing device; providing a first non-sinusoidal wave to a substrate processing device; as well as providing a second non-sinusoidal wave to a substrate processing device, Wherein, the first non-sinusoidal wave comprises: a first on-time duration during which the first voltage is applied to the substrate processing device; and a first off-time duration, the second voltage being applied to the substrate processing device during the first off-time duration, Wherein, the second non-sinusoidal wave includes: a second on-time duration during which the third voltage is applied to the substrate processing device; and a second off-time duration, the fourth voltage being applied to the substrate processing device during the second off-time duration, The start time of the second switch-on duration is the same as or later than the start time of the first switch-on duration, and the end time of the second switch-on duration is the same as or earlier than the end time of the first switch-on duration.

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