Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus includes: a placement replacement unit configured to replace and place a chip adhered to a tape covering an opening of a frame from the tape to a transport plate; a first cleaning unit that cleans the surface of the chip in a state in which the chip is held by the transport plate; a first activation unit that activates the surface of the chip in a state in which the chip is held by the transport plate; and a bonding part which is used for taking down the chip from the conveying plate and bonding the chip and the substrate in a manner that the surface of the taken-down chip faces the substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a loading / unloading unit, and a transfer unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies a plurality of chips individually. The bonding device mounts the chips supplied from the chip supply device on a substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent No. 6337400 Gazette Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] One aspect of the present disclosure provides a technique for suppressing contamination caused by foreign matter attached to a tape.

[0008] Solutions to the Problems

[0009] The substrate processing apparatus according to one aspect of the present disclosure includes: a mounting replacement unit that replaces and mounts a chip adhered to a tape covering an opening of a cover frame onto a transfer plate; a first cleaning unit that cleans the surface of the chip while the transfer plate holds the chip; a first activation unit that activates the surface of the chip while the transfer plate holds the chip; and a bonding unit that removes the chip from the transfer plate and bonds the chip to the substrate with the surface of the removed chip facing the substrate.

[0010] Effects of the Invention

[0011] According to one aspect of the present disclosure, contamination caused by foreign matter attached to a tape can be suppressed. Brief Description of the Drawings

[0012] Figure 1 It is a top view showing a substrate processing apparatus according to one embodiment.

[0013] Figure 2 It is a cross-sectional view showing an example of a substrate with a chip.

[0014] Figure 3 It is a cross-sectional view showing an example of a substrate.

[0015] Figure 4It is a cross-sectional view showing an example of a chip adhered to a tape.

[0016] Figure 5 It is a cross-sectional view showing an example of a transfer board.

[0017] Figure 6 It is a cross-sectional view showing an example of a chip placed on a transfer board.

[0018] Figure 7 It is a cross-sectional view showing an example of a placement replacement part.

[0019] Figure 8 It is a cross-sectional view showing an example of a bonding part.

[0020] Figure 9 It is a flowchart showing a substrate processing method according to one embodiment.

[0021] Figure 10 (A) of is a side view showing an example of a plurality of first suction heads, Figure 10 (B) of is Figure 10 a bottom view of the plurality of first suction heads shown in (A) of.

[0022] Figure 11 It is a cross-sectional view showing a modified example of the first suction head.

[0023] Figure 12 It is a cross-sectional view showing a first modified example of the transfer board.

[0024] Figure 13 It is a cross-sectional view showing a second modified example of the transfer board.

[0025] Figure 14 It is a cross-sectional view showing a third modified example of the transfer board.

[0026] Figure 15 (A) of is a cross-sectional view showing a fourth modified example of the transfer board, Figure 15 (B) of is a cross-sectional view showing the state when the chip is adsorbed, Figure 15 (C) of is a cross-sectional view showing the state when the chip is transferred. Detailed Embodiments

[0027] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same or corresponding structures are denoted by the same reference numerals, and the description may be omitted sometimes. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0028] Refer to Figures 1 - 8 to describe a substrate processing apparatus 1 according to one embodiment. As Figure 2As shown, the substrate processing apparatus 1 manufactures a chip-mounted substrate CW by bonding a chip CP to a substrate W. The chip-mounted substrate CW includes a substrate W and a plurality of chips CP bonded to the substrate W.

[0029] The substrate W has a base substrate Wa and a plurality of devices Wb formed on the base substrate Wa. The base substrate Wa is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The devices Wb include semiconductor elements, circuits, or terminals, etc. The devices Wb are formed on the main surface Wc of the substrate W.

[0030] The chip CP has a base substrate CPa and devices CPb formed on the base substrate CPa. The base substrate CPa is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The devices CPb include semiconductor elements, circuits, or terminals, etc. The devices CPb are formed on the surface CPc of the chip CP.

[0031] The substrate processing apparatus 1 bonds the chip CP to the substrate W such that the surface CPc of the chip CP faces the main surface Wc of the substrate W. The devices CPb of the chip CP and the devices Wb of the substrate W are electrically connected. As Figure 1 shown, the substrate processing apparatus 1 includes a loading / unloading station 2, a processing station 3, and a control unit 9. The loading / unloading station 2 and the processing station 3 are arranged in order from the negative X-axis side to the positive X-axis side.

[0032] The loading / unloading station 2 has a first stage 20. Boxes C1 to C4 are placed on the first stage 20. The box C1 houses a plurality of chips CP together with a frame FR. The box C2 houses the used frame FR from which at least a part of the chips CP has been removed. The box C3 houses the substrate W before being bonded to the chip CP. The box C4 houses the chip-mounted substrate CW.

[0033] As Figure 4 shown, a plurality of chips CP are bonded to a tape TP covering the opening of the frame FR, and a plurality of chips CP are arranged in the opening of the frame FR. The plurality of chips CP are obtained, for example, by dicing a substrate in a state where the substrate is bonded to the tape TP. The surface CPc of the chip CP is protected by a protective film PF before dicing. The protective film PF is disposed on the side opposite to the tape TP so as to sandwich the chip CP therebetween.

[0034] After the plurality of chips CP are transferred from the tape TP and placed on a transfer board 80, they are removed from the transfer board 80, turned over, and bonded to the substrate W. The protective film PF is removed before bonding the chip CP to the substrate W. The transfer board 80 is not particularly limited. For example, as Figure 5 and Figure 6 shown, the transfer board 80 has an adhesive tape 81 for mounting the chip CP and an elastic sheet 82 for mounting the adhesive tape 81.

[0035] The adhesive tape 81 does not have temperature sensitivity in this embodiment, but it may have temperature sensitivity and can change the adhesive force according to temperature. The chip CP can be easily separated by controlling the temperature of the transfer plate 80. The material of the stretchable sheet 82 is rubber or resin. The rubber is, for example, silicone rubber. The resin is, for example, polyimide, urethane acrylate, or aqueous polyurethane. As will be described in detail later, the bonding force between the chip CP and the transfer plate 80 can be decreased for each chip CP by locally deforming the stretchable sheet 82.

[0036] As Figure 1 shown, the loading / unloading station 2 includes a transfer area 21, a third transfer arm 22, and a fourth transfer arm 23. The transfer area 21 is adjacent to the first mounting table 20. The third transfer arm 22 holds and transfers the frame FR in the transfer area 21. The fourth transfer arm 23 holds and transfers the substrate W in the transfer area 21. The third transfer arm 22 and the fourth transfer arm 23 can each perform movement in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and rotation about the vertical axis.

[0037] The loading / unloading station 2 has a drive unit (not shown) that moves or rotates the third transfer arm 22 and the fourth transfer arm 23. The third transfer arm 22 and the fourth transfer arm 23 can be mounted on different Y-axis sliders as Figure 1 shown to independently move in the Y-axis direction, or can be mounted on the same Y-axis slider to simultaneously move in the Y-axis direction. When the third transfer arm 22 and the fourth transfer arm 23 are mounted on the same Y-axis slider, they are stacked in the Z-axis direction. When the third transfer arm 22 and the fourth transfer arm 23 are mounted on different Y-axis sliders, the plurality of Y-axis sliders are arranged so as to be offset in the Z-axis direction.

[0038] The third transfer arm 22 takes out a plurality of chips CP together with the frame FR from the cassette C1 and transfers them to the mounting / replacing unit 33. In addition, the third transfer arm 22 takes out the used frame FR from the mounting / replacing unit 33 and stores it in the cassette C2. The third transfer arm 22 for transferring a plurality of chips CP together with the frame FR and the third transfer arm 22 for transferring the used frame FR may be provided separately.

[0039] The fourth transfer arm 23 takes out the substrate W before the chip CP is bonded from the cassette C3 and transfers it to the substrate mounting portion 37. In addition, the fourth transfer arm 23 takes out the substrate CW with the chip from the substrate mounting portion 37 and stores it in the cassette C4. The fourth transfer arm 23 for transferring the substrate W before the chip CP is bonded and the fourth transfer arm 23 for transferring the substrate CW with the chip may be provided separately.

[0040] The processing station 3 includes a transfer area 30, a first transfer arm 31, and a second transfer arm 32. The transfer area 30 extends in the X-axis direction. The first transfer arm 31 holds and transfers a transfer board 80 in the transfer area 30. The second transfer arm 32 holds and transfers a substrate W in the transfer area 30. The first transfer arm 31 and the second transfer arm 32 can each move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and rotate about the vertical axis.

[0041] The processing station 3 has a drive unit (not shown) for moving or rotating the first transfer arm 31 and the second transfer arm 32. The first transfer arm 31 and the second transfer arm 32 can be mounted on different X-axis sliders to move independently in the X-axis direction as shown, or can be mounted on the same X-axis slider to move simultaneously in the X-axis direction. When the first transfer arm 31 and the second transfer arm 32 are mounted on the same X-axis slider, they are stacked in the Z-axis direction. When the first transfer arm 31 and the second transfer arm 32 are mounted on different X-axis sliders, the multiple X-axis sliders are arranged in a staggered manner in the Z-axis direction. Figure 1 The first transfer arm 31 takes out multiple chips CP together with the transfer board 80 from the loading and replacement unit 33, and after passing through the first cleaning unit 34, the first plasma processing unit 35, and the first hydrophilic treatment unit 36, transfers them to the bonding unit 41. In addition, the first transfer arm 31 takes out the transfer board 80 from the bonding unit 41 and transfers it to the loading and replacement unit 33. After that, the transfer board 80 is returned to the cassette C5. The transfer board 80 can also be reused without being returned to the cassette C5, that is, the transfer board 80 can also be transferred to the first cleaning unit 34, etc. while holding chips CP again.

[0042] The second transfer arm 32 takes out the substrate W before bonding the chips CP from the substrate placement unit 37, and after passing through the second cleaning unit 38, the second plasma processing unit 39, and the second hydrophilic treatment unit 40, transfers it to the bonding unit 41. In addition, the second transfer arm 32 takes out the substrate CW with chips from the bonding unit 41 and places it on the substrate placement unit 37 after passing through the inspection unit 42, etc. The second transfer arm 32 for transferring the substrate W before bonding the chips CP and the second transfer arm 32 for transferring the substrate CW with chips can also be provided separately.

[0043]

[0044] ​Preferably, the transfer plate 80 has the same diameter as the substrate W. In this case, the first transfer arm 31 and the second transfer arm 32 can use transfer arms of the same model (i.e., the same size and the same shape), thereby reducing costs. Similarly, the first cleaning unit 34 and the second cleaning unit 38, the first plasma processing unit 35 and the second plasma processing unit 39, or the first hydrophilic treatment unit 36 and the second hydrophilic treatment unit 40 can also use devices of the same model, thereby reducing costs. The enlargement of the device can also be suppressed.

[0045] The processing station 3 includes a mounting replacement unit 33, a first cleaning unit 34, a first plasma processing unit 35, a first hydrophilic treatment unit 36, a substrate mounting unit 37, a second cleaning unit 38, a second plasma processing unit 39, a second hydrophilic treatment unit 40, a bonding unit 41, an inspection unit 42, a peeling unit 43, and an annealing unit 44. These units 33 to 44 are adjacent to the transfer area 30 and are respectively arranged on the positive Y-axis side, the negative Y-axis side, or the positive X-axis side of the transfer area 30.

[0046] As Figure 7 shown, the mounting replacement unit 33 replaces and mounts the chip CP adhered to the tape TP covering the opening of the cover frame FR from the tape TP onto the transfer plate 80. The chip CP can be separated from the foreign matter attached to the tape TP, thereby suppressing the contamination of the substrate CW with chips by foreign matter. The foreign matter is, for example, fine particles generated when the substrate is scribed into a plurality of chips CP. In addition, when the transfer plate 80 has the same diameter as the substrate W, by mounting the chip CP on the transfer plate 80, the substrate W and the chip CP can be processed using devices of the same model.

[0047] In addition, the mounting replacement unit 33 can also mount a plurality of chips CP having different functions (different circuits) on the same transfer plate 80. The tape TP and the frame FR can be prepared according to the functions of the chips CP. That is, a plurality of chips CP having different functions can be mounted on different frames FR via different tapes TP. In this case, the mounting replacement unit 33 replaces and mounts a plurality of chips CP having different functions from the tape TP prepared according to the functions of the chips CP onto the same transfer plate 80. In addition, a plurality of chips CP having different functions can also be mounted on the same frame FR via the same tape TP. In this case, the mounting replacement unit 33 replaces and mounts a plurality of chips CP having different functions from the same tape TP onto the same transfer plate 80.

[0048] The loading and replacement part 33 has a third holding table 331, a fourth holding table 332, a third adsorption head 333 and a third driving unit 334. The third holding table 331 holds the frame FR. The fourth holding table 332 holds the conveying plate 80. The third adsorption head 333 adsorbs the chip CP. The surface CPc of the chip CP is covered by a protective film PF, and the third adsorption head 333 adsorbs the chip CP via the protective film PF. The third adsorption head 333 is in contact with the protective film PF. The third driving unit 334 replaces the chip CP adsorbed on the third adsorption head 333 from the belt TP to the conveying plate 80 by moving the third adsorption head 333 in the horizontal direction and the vertical direction.

[0049] The placement replacement unit 33 has a second pressing unit 335. The second pressing unit 335 partially presses the chip CP via the tape TP and partially deforms the tape TP, so that the chip CP can be lifted up individually, and friction between the chips CP can be suppressed when picking up the chip CP.

[0050] The second pressing part 335 includes, for example, a pressing pin 335a for partially pressing the belt TP, and a driving part 335b for driving the pressing pin 335a. The driving part 335b includes, for example, an air cylinder. In addition, the driving part 335b may also include a servo motor for controlling the position of the pressing pin 335a.

[0051] Although not shown, a plurality of pressing pins 335a may press one chip CP. In this case, the control unit 9 may control switching of the combination (including the number) of pressing pins 335a to be used according to the size or shape of the chip CP.

[0052] The loading and replacing part 33 has a second changing part 336, which changes the local deformation position of the belt TP by relatively moving the third holding platform 331 and the second pressing part 335. The second changing part 336, for example, moves the third holding platform 331, but can also move the second pressing part 335, or both.

[0053] like Figure 1 As shown, the loading and replacing section 33 is adjacent to the second loading platform 50, and a cassette C5 is loaded on the second loading platform 50. The cassette C5 accommodates the transfer plate 80. The loading and replacing section 33 has an internal transfer arm (not shown). The internal transfer arm takes out the transfer plate 80 from the cassette C5 and delivers it to the fourth holding platform 332.

[0054] In addition, the cassette C5 may be placed on the first placement table 20 of the carry-in / carry-out station 2. In this case, the fourth transfer arm 23 takes out the transfer plate 80 from the cassette C5 and delivers it to the fourth holding table 332.

[0055] In addition, the cassette C1 can also be placed on the second placement table 50. In this case, the internal transfer arm of the placement replacement unit 33 takes out a plurality of chips CP together with the frame FR from the cassette C1 and delivers them to the third holding table 331.

[0056] The first cleaning unit 34 cleans the surface CPc of the chip CP while the transfer plate 80 holds the chip CP. The surface CPc of the chip CP faces the side opposite to the transfer plate 80. When the surface CPc of the chip CP is covered with the protective film PF, the first cleaning unit 34 removes the protective film PF. The surface CPc of the chip CP can be cleaned. Activation and bonding are performed after cleaning, thereby being able to suppress the inclusion of foreign matters such as bubbles or particles during bonding. Since the chip CP has been transferred from the tape TP to the transfer plate 80, the influence of fine particles generated during dicing is small, and the chip CP can be cleaned more effectively, thereby being able to suppress defects during activation and bonding.

[0057] The first plasma processing unit 35 performs plasma processing on the surface CPc of the chip CP. In the first plasma processing unit 35, for example, oxygen as a processing gas is excited under reduced pressure to be plasmaized and thus ionized. The surface CPc of the chip CP is modified by irradiating oxygen ions onto the surface CPc of the chip CP. The processing gas is not limited to oxygen, and for example, it can also be nitrogen or the like. The first plasma processing unit 35 is an example of the first activation unit. The first activation unit activates the surface CPc of the chip CP.

[0058] The first hydrophilization processing unit 36 hydrophilizes the surface CPc of the chip CP. For example, the first hydrophilization processing unit 36 supplies pure water (such as deionized water) to the chip CP while rotating the transfer plate 80 held by the rotary holding disk. The pure water imparts OH groups to the surface CPc of the chip CP that has been previously modified. The chip CP and the substrate W can be bonded using the hydrogen bonds between the OH groups. The first hydrophilization processing unit 36 is an example of the first activation unit.

[0059] The substrate W before the chip CP to be bonded is placed on the substrate placement unit 37. The substrate CW with chips can also be placed on the substrate placement unit 37. The substrate placement unit 37 for placing the substrate W before the chip CP to be bonded and the substrate placement unit 37 for placing the substrate CW with chips can be provided separately, or a plurality of each can be provided separately.

[0060] The second cleaning unit 38 cleans the main surface Wc of the substrate W. The main surface Wc of the substrate W can be cleaned. Activation and bonding are performed after cleaning, thereby being able to suppress the inclusion of foreign matters such as bubbles or particles during bonding.

[0061] The second plasma processing unit 39 performs plasma processing on the main surface Wc of the substrate W. In the second plasma processing unit 39, for example, oxygen as a processing gas is excited under reduced pressure to be ionized into plasma. By irradiating the main surface Wc of the substrate W with oxygen ions, the main surface Wc of the substrate W is modified. The processing gas is not limited to oxygen, and for example, it can also be nitrogen or the like. The second plasma processing unit 39 is an example of the second activation unit.

[0062] The second hydrophilic treatment unit 40 hydrophilizes the main surface Wc of the substrate W. For example, the second hydrophilic treatment unit 40 supplies pure water (e.g., deionized water) to the substrate W while rotating the substrate W held by the rotary holding plate. The pure water imparts OH groups to the main surface Wc of the substrate W that has been pre-modified. The chip CP can be bonded to the substrate W by using the hydrogen bonds between the OH groups. The second hydrophilic treatment unit 40 is an example of the second activation unit.

[0063] As Figure 8 shown, the bonding unit 41 removes the chip CP from the transfer plate 80 and bonds the chip CP to the substrate W such that the surface CPc of the removed chip CP faces the main surface Wc of the substrate W. A substrate CW with a chip is obtained. The device CPb of the chip CP and the device Wb of the substrate W are electrically connected.

[0064] In addition, the bonding unit 41 can also bond a plurality of chips CP having different functions (different circuits) to the same substrate W. A plurality of chips CP having different functions are electrically connected to one device Wb. The substrate W has a plurality of devices Wb, and a plurality of chips CP having different functions are electrically connected to each of the plurality of devices Wb. There is no particular limitation on the number of chips CP electrically connected to one device Wb.

[0065] The bonding unit 41 includes a first holding table 411, a first suction head 412, and a first driving unit 413. The first holding table 411 holds the transfer plate 80. The first suction head 412 sucks the surface CPc of the chip CP in a non-contact manner. The first driving unit 413 moves the first suction head 412 in the horizontal direction and the vertical direction. The first driving unit 413 removes the chip CP from the transfer plate 80 by moving the first suction head 412 relatively away from the transfer plate 80.

[0066] The first suction head 412 sucks the surface CPc of the chip CP in a state where a gap is formed between the first suction head 412 and the chip CP. Contamination of the surface CPc of the chip CP can be prevented. The first suction head 412 is, for example, an ultrasonic type or a Bernoulli type. The ultrasonic type utilizes the squeezing effect generated by ultrasonic vibration, and the Bernoulli type utilizes the Bernoulli effect. Compared with the Bernoulli type, the ultrasonic type can suppress the offset in the horizontal direction.

[0067] The joint portion 41 has a first pressing portion 414. The first pressing portion 414 partially presses the chip CP through the conveying plate 80 and partially deforms the conveying plate 80. The first pressing portion 414 forms a wedge-shaped gap around the lower surface of the chip CP by partially deforming the conveying plate 80 in an upward convex manner, for example, to reduce the bonding force between the chip CP and the conveying plate 80. As a result, the chip CP can be easily removed from the conveying plate 80.

[0068] The first adsorption head 412 adsorbs the chip CP pressed by the first pressing portion 414 in a non-contact manner. Since a gap is formed between the first adsorption head 412 and the chip CP, the adsorption force is weak. According to the present embodiment, by partially deforming the conveying plate 80 in an upward convex manner, a wedge-shaped gap is formed at the periphery of the lower surface of the chip CP, thereby reducing the bonding force between the chip CP and the conveying plate 80. Therefore, even if the adsorption force is weak, the chip CP can be removed from the conveying plate 80.

[0069] The first pressing part 414 includes a pressing pin 414a for partially pressing the conveying plate 80, and a driving part 414b for driving the pressing pin 414a. The driving part 414b includes, for example, a servo motor for controlling the position of the pressing pin 414a. By controlling the position of the pressing pin 414a, the contact between the chip CP and the first adsorption head 412 can be suppressed.

[0070] Although not shown, a plurality of pressing pins 414a may press one chip CP. In this case, the control unit 9 may control switching of the combination (including the number) of pressing pins 414a to be used according to the size or shape of the chip CP.

[0071] The joint part 41 has a first changing part 415, which changes the local deformation position of the conveying plate 80 by relatively moving the first holding platform 411 and the first pressing part 414. The first changing part 415 moves the first holding platform 411, but may also move the first pressing part 414, or both.

[0072] The joint part 41 has a second holding platform 416, a second adsorption head 417, and a second driving part 418. The second holding platform 416 holds the substrate W. The second adsorption head 417 receives the chip CP from the first adsorption head 412, and adsorbs the back surface CPd of the chip CP that is opposite to the surface CPc. Since there is no problem even if the back surface CPd is contaminated, the second adsorption head 417 is in contact with the chip CP.

[0073] The second driving unit 418 joins the chip CP and the substrate W by moving the second suction head 417 in the horizontal and vertical directions so that the surface CPc of the chip CP adsorbed to the second suction head 417 faces the main surface Wc of the substrate W. The second driving unit 418 turns the second suction head 417 upside down to turn the chip CP upside down.

[0074] In addition, in order to turn the chip CP upside down, instead of the second driving unit 418 turning the second suction head 417 upside down, the first driving unit 413 may turn the first suction head 412 upside down. In the former case, it is preferable that the first suction head 412 is an ultrasonic type. Different from the Bernoulli type, the ultrasonic type can turn upside down in a state where the chip CP is adsorbed in a non-contact manner.

[0075] The inspection unit 42 (refer to Figure 1 ) inspects whether the joining state between the substrate W and the chip CP is good or bad. The inspection is performed for each chip CP. The inspection items include at least one of the presence or absence of foreign matters such as bubbles and the presence or absence of position deviation. For example, if there are bubbles at the interface between the substrate W and the chip CP, the bubbles will burst when the substrate CW with chips is subjected to vacuum treatment. Due to the bursting of the bubbles, even the chip CP with a good joining state will have problems or contaminate the vacuum chamber. Or, if there are bubbles or particles at the interface between the substrate W and the chip CP, the height of the chip CP will become higher, resulting in chipping during grinding or polishing, and even the chip CP with a good joining state will have problems due to the impact.

[0076] The peeling unit 43 peels off the chip CP with a bad joining state from the substrate W in the inspection performed by the inspection unit 42. By peeling off the chip CP with a bad joining state from the substrate W, the problems caused when there are bubbles or particles at the interface between the substrate W and the chip CP can be solved, thereby improving the quality of the substrate CW with chips. The chip CP peeled off from the substrate W can be reused or discarded.

[0077] The annealing unit 44 performs a heat treatment on the substrate CW with chips. Before the heat treatment, the chip CP and the substrate W are bonded to each other by hydrogen bonds between OH groups. Through the heat treatment, a dehydration condensation reaction occurs, resulting in the generation of covalent bonds, and the bonding strength between the chip CP and the substrate W is improved. In addition, the peeling of the chip CP by the peeling unit 43 is performed before the heat treatment of the substrate CW with chips by the annealing unit 44.

[0078] The control unit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. Programs for controlling various processes executed in the substrate processing apparatus 1 are stored in the storage unit 92. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. It is also possible to provide a unit control unit that controls the operation of each unit constituting the substrate processing apparatus 1, and a system control unit that uniformly controls a plurality of unit control units. The control unit 9 may be constituted by the unit control unit and the system control unit.

[0079] Next, with reference to Figure 9 a substrate processing method according to an embodiment will be described. Figure 9 The processing of

[0080] First, the third transfer arm 22 of the loading / unloading station 2 takes out a plurality of chips CP together with the frame FR from the cassette C1 and transfers them to the mounting replacement unit 33. Next, the mounting replacement unit 33 replaces the chips CP from the tape TP and mounts them on the transfer board 80 (step S101). After that, the first transfer arm 31 of the processing station 3 takes out a plurality of chips CP together with the transfer board 80 from the mounting replacement unit 33 and transfers them to the first cleaning unit 34. Next, the first cleaning unit 34 cleans the surfaces CPc of the plurality of chips CP (step S102). After that, the first transfer arm 31 takes out a plurality of chips CP together with the transfer board 80 from the first cleaning unit 34 and transfers them to the first plasma processing unit 35. Next, the first plasma processing unit 35 performs plasma processing on the surfaces CPc of the plurality of chips CP (step S103). After that, the first transfer arm 31 takes out a plurality of chips CP together with the transfer board 80 from the first plasma processing unit 35 and transfers them to the first hydrophilic treatment unit 36. Next, the first hydrophilic treatment unit 36 performs hydrophilic treatment on the surfaces CPc of the plurality of chips CP (step S104). After that, the first transfer arm 31 takes out a plurality of chips CP together with the transfer board 80 from the first hydrophilic treatment unit 36 and transfers them to the bonding unit 41.

[0081] The following processing is performed in parallel with the above processing. First, the fourth transfer arm 23 of the loading and unloading station 2 takes out the substrate W from the cassette C3 and transfers it to the substrate placement unit 37. After that, the second transfer arm 32 of the processing station 3 takes out the substrate W from the substrate placement unit 37 and transfers it to the second cleaning unit 38. Next, the second cleaning unit 38 cleans the main surface Wc of the substrate W (step S105). After that, the second transfer arm 32 takes out the substrate W from the second cleaning unit 38 and transfers it to the second plasma processing unit 39. Next, the second plasma processing unit 39 performs plasma processing on the main surface Wc of the substrate W (step S106). After that, the second transfer arm 32 takes out the substrate W from the second plasma processing unit 39 and transfers it to the second hydrophilic treatment unit 40. Next, the second hydrophilic treatment unit 40 performs hydrophilic treatment on the main surface Wc of the substrate W (step S107). After that, the second transfer arm 32 takes out the substrate W from the second hydrophilic treatment unit 40 and transfers it to the bonding unit 41.

[0082] Next, the bonding unit 41 removes the chip CP from the transfer board 80 and bonds the chip CP to the substrate W such that the surface CPc of the removed chip CP faces the main surface Wc of the substrate W (step S108). Thus, the substrate CW with the chip is obtained. After that, the second transfer arm 32 takes out the substrate CW with the chip from the bonding unit 41 and transfers it to the inspection unit 42.

[0083] Next, the inspection unit 42 inspects whether the bonding state between the substrate W and the chip CP is good or bad (step S109). The inspection unit 42 sends the inspection result to the control unit 9. The control unit 9 verifies whether there is a defect (step S110). The control unit 9 performs control to allocate the transfer destination of the substrate CW with the chip to the annealing unit 44 or the peeling unit 43 according to the inspection result of the inspection unit 42.

[0084] In the case where there is a defect in the bonding state of the chip CP (step S110: "No"), the transfer destination of the substrate CW with the chip is the peeling unit 43. The second transfer arm 32 takes out the substrate CW with the chip from the inspection unit 42 and transfers it to the peeling unit 43. Next, the peeling unit 43 peels off the chip CP with a defective bonding state from the substrate W (step S111). After that, the second transfer arm 32 takes out the substrate CW with the chip from the peeling unit 43 and transfers it to the annealing unit 44. After that, steps S112 and the subsequent processing are performed.

[0085] In addition, it may be that the first transfer arm 31 takes out the substrate CW with the chip from the peeling unit 43 and transfers it to the bonding unit 41. The bonding unit 41 bonds the chip CP again at the position where the chip CP was peeled off. After that, steps S109 and the subsequent processing may be performed again.

[0086] On the other hand, when there are no defects in the bonding state of all the chips CP (step S110: "Yes"), the transfer destination of the substrate CW with chips is the annealing unit 44. The second transfer arm 32 takes out the substrate CW with chips from the inspection unit 42 and transfers it to the annealing unit 44. Then, the annealing unit 44 performs a heat treatment on the substrate CW with chips (step S112). Through the heat treatment, the bonding strength between the chip CP and the substrate W is increased.

[0087] After that, the second transfer arm 32 takes out the substrate CW with chips from the annealing unit 44 and places it on the substrate placement unit 37. Finally, the fourth transfer arm 23 of the loading / unloading station 2 takes out the substrate CW with chips from the substrate placement unit 37 and stores it in the cassette C4. The substrate CW with chips is taken out from the substrate processing apparatus 1 in the state of being stored in the cassette C4.

[0088] Next, Figure 10 an example of the plurality of first suction heads 412A to 412D will be described. As Figure 10 shown, it is also possible to prepare a plurality of first suction heads 412A to 412D. The plurality of first suction heads 412A to 412D have different sizes or different shapes. The control unit 9 controls the switching of the first suction heads 412A to 412D to be used according to the size or shape of the chip CP. The trouble of replacing (substituting and installing) the first suction heads 412A to 412D can be saved.

[0089] The plurality of first suction heads 412A to 412D are mounted on a single cage 419. The first drive unit 413 moves the plurality of first suction heads 412A to 412D together by moving the cage 419. The first drive unit 413 may also rotate the cage 419. The control unit 9 controls the movement or rotation of the cage 419 to control the switching of the first suction heads 412A to 412D to be used. The trouble of substituting and installing the first suction heads 412A to 412D onto the cage 419 can be saved.

[0090] When the plurality of first suction heads 412A to 412D are ultrasonic suction heads, ultrasonic vibrators are provided on the cage 419. One ultrasonic vibrator vibrates the plurality of first suction heads 412A to 412D together. In addition, the number of ultrasonic vibrators may also be plural, and the plurality of first suction heads 412A to 412D can be vibrated individually.

[0091] Next, Figure 11 a modified example of the first suction head 412 will be described. As Figure 11As shown, the first adsorption head 412 has a restraint portion 412a that suppresses deformation of the transfer plate 80 around the chip CP. The restraint portion 412a may be provided in a pair so as to sandwich the chip CP therebetween, or may be provided in a ring shape so as to surround the chip CP. A part of the stretchable sheet 82 can be selectively deformed, thereby suppressing unintended peeling of the chip CP.

[0092] Next, with reference to Figure 12 the transfer plate 80 according to the first modification will be described. As Figure 12 shown, the transfer plate 80 may also have a mesh plate 83 on which a stretchable sheet 82 is detachably stretched. The mesh plate 83 has a plurality of through holes 83a. In a plan view (when viewed from above), the through holes 83a are smaller than the chip CP.

[0093] The first pressing portion 414 presses one chip CP through the stretchable sheet 82 by a plurality of pressing pins 414a passing through the plurality of through holes 83a. The driving portion 414b moves the plurality of pressing pins 414a independently. The control portion 9 controls to switch the combination (including the number) of the pressing pins 414a to be used according to the size or shape of the chip CP.

[0094] Next, with reference to Figure 13 the transfer plate 80 according to the second modification will be described. As Figure 13 shown, the stretchable sheet 82 of the transfer plate 80 has a concave portion 82a on the surface opposite to the chip CP. The concave portion 82a is provided for each chip CP. In a plan view (when viewed from above), the concave portion 82a is larger than the chip CP.

[0095] The mounting replacement portion 33 mounts the chip CP on the thinned portion of the transfer plate 80 with the concave portion 82a. The first pressing portion 414 presses the chip CP through the stretchable sheet 82 by the pressing pin 414a inserted into the concave portion 82a. By utilizing the rigidity difference based on the thickness difference, a part of the stretchable sheet 82 can be selectively deformed, thereby suppressing unintended peeling of the chip CP.

[0096] Next, with reference to Figure 14 the transfer plate 80 according to the third modification will be described. As Figure 14 shown, the transfer plate 80 has a restraint plate 84 that restrains deformation of the stretchable sheet 82. The material of the restraint plate 84 is metal. The metal is, for example, stainless steel. Through holes 84a are formed in the restraint plate 84. The through holes 84a are provided for each chip CP. In a plan view (when viewed from above), the through holes 84a are larger than the chip CP.

[0097] The mounting replacement unit 33 mounts the chip CP on the portion of the transfer board 80 provided with the through holes 84a. The first pressing portion 414 presses the chip CP through the elastic sheet 82 by the pressing pin 414a inserted into the through hole 83a of the restraint plate 84. A part of the elastic sheet 82 can be selectively deformed, thereby suppressing the unintentional peeling of the chip CP.

[0098] Next, the transfer board 80 according to the fourth modification will be described with reference to Figure 15 . As Figure 15 shown, the transfer board 80 has a hollow plate 85, a plurality of through holes 85a provided on one side of the hollow plate 85, an elastic film 86 covering the plurality of through holes 85a, a communication hole 85b that communicates the internal space of the hollow plate 85 with the external space, and an opening / closing valve 87 that opens and closes the communication hole 85b.

[0099] The elastic film 86 covers, for example, the upper surface of the hollow plate 85. The elastic film 86 is a rubber film or a resin film. When the internal space of the hollow plate 85 is decompressed compared to the external space of the hollow plate 85, a part of the elastic film 86 is bent into the through hole 85a due to the pressure difference. The communication hole 85b is provided on the surface of the hollow plate 85 that is exposed from the elastic film 86, for example, on the lower surface of the hollow plate 85.

[0100] The opening / closing valve 87 has: a valve body 87a that can move between an open position (refer to Figure 15 (A) of Figure 15 and Figure 15 (B) of

[0101] that opens the communication hole 85b) and a closed position (refer to Figure 15 (A) of Figure 15 and Figure 15 (C) of

[0102] that closes the communication hole 85b); and a biasing member 87b that biases the valve body 87a in a direction from the open position toward the closed position. The valve body 87a and the biasing member 87b are provided in the internal space of the hollow plate 85. The biasing member 87b is, for example, a spring. Figure 15As shown in (A) of , the upper surface of the fourth holding table 332 presses the flange 87d upward, and the flange 87d is received in the communication hole 85b. As the flange 87d moves upward, the valve body 87a moves from the closed position to the open position. At this time, there is no pressure difference between the internal space and the external space of the hollow plate 85, and the entire elastic film 86 is flat. In this state, the chip CP is placed on the elastic film 86.

[0103] Next, a suction source (e.g., a vacuum pump) (not shown) sucks gas from the internal space of the hollow plate 85 to the external space of the hollow plate 85 via the communication hole 85b. When the internal space of the hollow plate 85 is decompressed compared to the external space of the hollow plate 85, a part of the elastic film 86 bends into the through hole 85a due to the pressure difference. As a result, as Figure 15 shown in (B) of , a vacuum space is generated between the lower surface of the chip CP and the elastic film 86, and the chip CP is adsorbed to the transfer plate 80.

[0104] Next, when the transfer plate 80 is removed from the fourth holding table 332, as Figure 15 shown in (C) of , the biasing member 87b moves the valve body 87a from the open position to the closed position. Thereby, the state where the internal space of the hollow plate 85 is decompressed compared to the external space of the hollow plate 85 is maintained. Therefore, the state where a vacuum space is generated between the lower surface of the chip CP and the elastic film 86 is maintained, and thus the state where the chip CP is adsorbed to the transfer plate 80 is maintained.

[0105] With the chip CP adsorbed to the transfer plate 80, it is transferred to the bonding portion 41 after passing through the first cleaning portion 34, the first plasma processing portion 35, and the first hydrophilic treatment portion 36. Thus, at the bonding portion 41, the first suction head 412 adsorbs the chip CP in a non-contact manner. The suction force of the first suction head 412 is greater than the suction force of the transfer plate 80. Therefore, the chip CP can be removed from the transfer plate 80.

[0106] The above has described the embodiments of the substrate processing apparatus and the substrate processing method according to the present disclosure, etc., but the present disclosure is not limited to the above embodiments, etc. Various changes, corrections, substitutions, additions, deletions, and combinations can be made within the scope described in the claims. These also naturally belong to the technical scope of the present disclosure.

[0107] This application claims priority based on Japanese Patent Application No. 2022-172036 filed with the Japan Patent Office on October 27, 2022, and incorporates the entire content of Japanese Patent Application No. 2022-172036 herein by reference.

[0108] Explanation of Reference Numerals

[0109] 1: Substrate processing apparatus; 33: Mounting replacement unit; 34: First cleaning unit; 35: First plasma processing unit (first activation unit); 36: First hydrophilic treatment unit (first activation unit); 41: Bonding unit; 80: Transfer board; CP: Chip; FR: Frame; TP: Tape; W: Substrate.

Claims

1. A substrate processing device, comprising: A loading and replacing section that replaces the chip adhered to the tape covering the opening of the frame from the tape to the conveying plate; a first cleaning unit for cleaning a surface of the chip while the chip is held by the conveying plate; a first activation unit configured to activate the surface of the chip while the chip is held by the conveying plate; as well as A bonding section removes the chip from the conveying plate and bonds the chip to the substrate in a manner such that the surface of the removed chip faces the substrate.

2. The substrate processing device according to claim 1, in, The bonding portion has a first adsorption head, and the first adsorption head adsorbs the surface of the chip in a non-contact manner.

3. The substrate processing device according to claim 2, in, The bonding portion includes a first pressing portion that partially presses the chip via the conveying plate and partially deforms the conveying plate. The first adsorption head adsorbs the surface of the chip pressed by the first pressing part in a non-contact manner.

4. The substrate processing device according to claim 3, in, The conveying plate has an adhesive tape for attaching the chip and a stretchable sheet for attaching the adhesive tape.

5. The substrate processing device according to claim 4, in, The stretch sheet has a recessed portion on a surface opposite to the core sheet. The placement and replacement unit places the chip on the portion of the transfer plate that is thinned by the recessed portion.

6. The substrate processing apparatus according to claim 4, in, The conveying plate has a restraining plate, and the restraining plate restrains the deformation of the stretchable sheet. The restraining plate is provided with a through hole, The placement and replacement unit places the chip on a portion of the conveying plate where the through hole is provided.

7. The substrate processing apparatus according to claim 3, in, The first adsorption head has a restraining portion that suppresses deformation of the conveying plate around the chip.

8. The substrate processing apparatus according to any one of claims 2 to 7, in, The joint portion has a plurality of the first adsorption heads, The substrate processing device also includes a control unit, which controls the switching of the first adsorption head to be used according to the size or shape of the chip.

9. The substrate processing apparatus according to any one of claims 1 to 7, in, The transfer plate has the same diameter as that of the substrate.

10. The substrate processing apparatus according to claim 1 or 2, in, The conveying plate includes a hollow plate, a plurality of through holes provided on one surface of the hollow plate, an elastic film covering the plurality of through holes, a connecting hole connecting the inner space of the hollow plate with the outer space, and an on-off valve opening and closing the connecting hole.

11. A substrate processing method, comprising the following processing: The chip adhered to the tape covering the opening of the frame is replaced from the tape to the conveying plate; cleaning the surface of the chip while the chip is held by the conveying plate; activating the surface of the chip while the chip is held by the conveying plate; as well as The chip is removed from the conveying plate, and the chip is bonded to the substrate so that the surface of the removed chip faces the substrate.

12. The substrate processing method according to claim 11, in, Removing the chip from the conveying plate includes: moving the first adsorption head adsorbing the surface of the chip in a non-contact manner relatively away from the conveying plate.

13. The substrate processing method according to claim 12, in, Removing the chip from the conveying plate includes: partially pressing the chip through the conveying plate and partially deforming the conveying plate, The first adsorption head adsorbs the locally pressed surface of the chip in a non-contact manner.

14. The substrate processing method according to claim 13, in, The conveying plate has an adhesive tape for attaching the chip and a stretchable sheet for attaching the adhesive tape.

15. The substrate processing method according to claim 14, in, The stretch sheet has a recessed portion on a surface opposite to the core sheet. The replacing and placing the chip from the tape to the conveying plate includes placing the chip on a portion of the conveying plate that is thinned by the recessed portion.

16. The substrate processing method according to claim 14, in, The conveying plate has a restraining plate, and the restraining plate restrains the deformation of the stretchable sheet. The restraining plate is provided with a through hole, The replacing and placing the chip from the tape to the conveying plate includes placing the chip on a portion of the conveying plate where the through hole is provided.

17. The substrate processing method according to claim 13, in, The first adsorption head has a restraining portion that suppresses deformation of the conveying plate around the chip.

18. The substrate processing method according to any one of claims 12 to 17, in, Also includes: Prepare a plurality of the first adsorption heads, and switch the first adsorption heads to be used according to the size or shape of the chip.

19. The substrate processing method according to any one of claims 11 to 17, in, The transfer plate has the same diameter as that of the substrate.

20. The substrate processing method according to claim 11 or 12, in, The conveying plate includes a hollow plate, a plurality of through holes provided on one surface of the hollow plate, an elastic film covering the plurality of through holes, a connecting hole connecting the inner space of the hollow plate with the outer space, and an on-off valve opening and closing the connecting hole.

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