Probe pin, probe card including the same, and method of manufacturing the same

By configuring various forms of vertical slits and horizontal slits in the probe pins and adjusting their flexibility, the problem of skin effect and insufficient loading flow under high-frequency signals is solved, and the excellent performance and stability of the probe pins under high-frequency signals is achieved.

CN120077281APending Publication Date: 2025-05-30AMST CO LTD
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Patent Information

Application Number
CN202380073605.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-10-20
Filing Date
2023-10-12
Publication Date
2025-05-30

AI Technical Summary

Technical Problem

Existing probe pins tend to cause skin effects under high-frequency signals, affecting loading flow, and during the miniaturization of semiconductor components, the electrode pad spacing becomes narrower, resulting in widening of the probe pin width, limiting its application.

Method used

By configuring multiple forms of vertical and horizontal slits, the flexibility of the probe pins is adjusted, so as to reduce the skin effect under high-frequency signals, increase the current carrying capacity, and prevent disengagement when inserted into the upper and lower plates.

Benefits of technology

It realizes the excellent high-frequency signal characteristics of the probe pin under high-frequency signals, reduces the skin effect, increases the current carrying capacity, and ensures the stability and adaptability of the probe pin.

✦ Generated by Eureka AI based on patent content.

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Abstract

According to the invention, the flexibility of the probe pin is adjusted by configuring the vertical slit and the horizontal slit, so that elastic deformation of the probe pin can be easily realized. In addition, the present invention can maintain excellent high-frequency signal characteristics by adjusting the cross-sectional area of the probe pin. Furthermore, the present invention can easily insert the probe pins into the upper plate and the lower plate and prevent the inserted probe pins from being separated by using a plurality of separated bodies separated by vertical slits and / or horizontal slits.
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Description

Technical Field

[0001] The present invention relates to a probe pin, a probe card including the probe pin, and a manufacturing method thereof, and more particularly, to a probe pin that can adjust its flexibility through a slit structure, a probe card including the probe pin, and a manufacturing method thereof. Background Art

[0002] A probe card is a device used to confirm the characteristics of semiconductor elements at the wafer level before dicing for manufacturing individual packages after manufacturing semiconductor wafer elements. Probe pins are configured in the probe card so that an electrical signal can be input and defects of the semiconductor elements can be found based on the results.

[0003] The probe card includes a plurality of probe pins. The probe pins are in contact with the electrode pads of the semiconductor elements, and the contacted probe pins apply a certain pressure to the semiconductor elements. The process of contacting the probe pins with the electrode pads and applying pressure to the electrode pads as described above is called overdrive.

[0004] The probe pins are made of an elastically deformable material to prevent damage to the probe pins and the semiconductor elements. As described above, various methods have been proposed to adjust the flexibility of the probe pins themselves to prevent damage to the semiconductor elements.

[0005] Related thereto, a "electrical contact element" is disclosed in Prior Art Registration No. 10-1082459. In the electrical contact element of the prior art document, slits are formed through the probe pins and perpendicular to the length direction. However, the "electrical contact element" has a problem in that the width in the arrangement direction of the one or more vertical slits is widened. This causes significant limitations in the current situation where the pitch of the electrode pads is gradually narrowed due to the miniaturization of semiconductor elements. Prior Art Documents Patent Documents

[0008] (Patent Document 1) Registered Patent Gazette No. 10-1082459 Summary of the Invention

[0010] In order to solve the above-described problems, an object of the present invention is to provide a probe pin and a probe pin manufacturing method that can adjust the flexibility through various forms of vertical slits and / or horizontal slits to easily achieve elastic deformation and narrow the pitch of the electrode pads, and can maintain excellent high-frequency signal characteristics by adjusting the cross-sectional area.

[0011] In addition, an object of the present invention is to provide a probe pin and a method for manufacturing the probe pin, which can reduce the skin effect even at high-frequency signals and thereby increase the current-carrying capacity by using a plurality of spaced-apart bodies spaced apart by vertical slits and horizontal slits.

[0012] In addition, an object of the present invention is to provide a probe card including a probe pin that can easily insert the probe pin into an upper board and a lower board and prevent detachment thereof by using a plurality of spaced-apart bodies spaced apart by vertical slits and / or horizontal slits.

[0013] To achieve the above object, a probe pin according to an embodiment of the present invention may include: a body formed to extend in one side direction; and a slit formed to penetrate a partial area of the body; the body may include: a first body constituting one side of the body; a second body extending from the first body and constituting an intermediate portion of the body; and a third body extending from the second body and constituting the other side of the body; the slit may include: a vertical slit penetrating a horizontal plane of the body and formed in a vertical direction; and a horizontal slit penetrating a vertical plane of the body and formed in a horizontal direction.

[0014] In addition, at least one of the vertical slit and the horizontal slit may be formed on the second body.

[0015] In addition, at least one of the vertical slit and the horizontal slit may extend from the second body to an end of the first body, so that one side of the first body is open.

[0016] In addition, the vertical slit and the horizontal slit may cross each other.

[0017] In addition, the body may include a first spaced-apart body, a second spaced-apart body, a third spaced-apart body, and a fourth spaced-apart body spaced apart from each other by the vertical slit and the horizontal slit, and at least one of the first spaced-apart body to the fourth spaced-apart body includes an over-spaced portion bent in a direction in which the spaced-apart distance from at least one of the remaining at least one increases, so as to prevent the body from detaching by bringing the over-spaced portion into contact with an upper board into which the body is inserted.

[0018] In addition, the main body may include a first separated body, a second separated body, a third separated body, and a fourth separated body separated from each other by means of the vertical slit and the horizontal slit, and further includes: a connecting band portion that connects the inner side surface of the first separated body to at least one inner side surface of the second separated body to the fourth separated body; and a recessed portion that is recessed and formed on at least one of the outer side surface facing the inner side surface of the first separated body to which the connecting band portion is connected and the outer side surface facing the at least one inner side surface.

[0019] In addition, at least one of the vertical slit and the horizontal slit may be configured with a plurality of them.

[0020] In addition, the vertical slit and the horizontal slit may have different widths or lengths from each other.

[0021] In addition, the probe pin may further include a contact tip that contacts the object to be inspected by being located at the end region of the third body.

[0022] In addition, the contact tip may be made of a material different from that of the main body.

[0023] In addition, the contact tip may include a rhodium layer made of a material containing rhodium.

[0024] In addition, the contact tip may further include: a protective layer located above the rhodium layer and made of a material having a hardness lower than that of the rhodium.

[0025] In addition, the thickness of the contact tip may be greater than the thickness of the horizontal slit.

[0026] In addition, the horizontal slit and the contact tip are characterized in that they can be located at different heights from each other without forming an overlapping region.

[0027] In addition, the main body may include a first separated body, a second separated body, a third separated body, and a fourth separated body separated from each other by means of the vertical slit and the horizontal slit. At least one of the first separated body to the fourth separated body further includes: an insulating layer formed in an insulating manner from the remaining ones; the insulating layer is formed on the at least one inner side surface facing the remaining ones and extends to the first body to the third body.

[0028] In addition, at least one of the first separated body to the fourth separated body may be bent or provided with a protruding portion for connection to a ground wiring as a ground pin.

[0029] In addition, a probe pin according to an embodiment of the present invention may include: a main body formed to extend in one side direction; a vertical slit penetrating the horizontal plane of the main body and formed in the vertical direction; a horizontal slit penetrating the vertical plane of the main body and formed in the horizontal direction; and a contact tip formed on one side of the main body.

[0030] In addition, the contact tip may be formed at a height closer to the lower surface than the upper surface of the main body.

[0031] On the other hand, a probe card according to an embodiment of the present invention may include: probe pins configured with a main body, a vertical slit penetrating the horizontal plane of the main body and formed in the vertical direction, and a horizontal slit penetrating the vertical plane of the main body and formed in the horizontal direction; an upper plate configured with an upper hole through which the probe pins pass; and a lower plate configured with a lower hole through which the probe pins pass; the main body may include: a first main body located in the upper hole; a third main body located in the lower hole; and a second main body formed between the first main body and the third main body.

[0032] In addition, the main body may include a first spaced main body, a second spaced main body, a third spaced main body, and a fourth spaced main body spaced apart from each other by means of the vertical slit and the horizontal slit, and at least one of the first spaced main body to the fourth spaced main body includes an over-spaced portion bent in a direction in which the spacing distance from at least one of the remaining ones other than the at least one increases, so as to prevent the main body from detaching by bringing the over-spaced portion into contact with the upper plate into which the main body is inserted.

[0033] In addition, the main body may include a first spaced main body, a second spaced main body, a third spaced main body, and a fourth spaced main body spaced apart from each other by means of the vertical slit and the horizontal slit, and at least one of the first spaced main body to the fourth spaced main body further includes an insulating layer formed in an insulating manner with respect to the remaining ones, the insulating layer being formed on the inner side surface facing the remaining ones and extending from the first main body to the third main body, and the upper plate includes a ground wiring on the upper surface or the lower surface, and the at least one may be connected to the ground wiring.

[0034] On the other hand, a manufacturing method of a probe pin according to an embodiment of the present invention may include: a process of preparing a base substrate; a process of disposing a first main body layer on the base substrate; a process of disposing a second main body layer including a connecting portion and a horizontal slit on the first main body layer; and a process of disposing a third main body layer on the second main body layer.

[0035] In addition, the second main body layer may further include a contact tip.

[0036] In addition, before the process of configuring the second main body layer, it may further include: a process of configuring a first sacrificial layer around the first main body layer; the process of configuring the second main body layer includes: a process of configuring the connection part on a part of the area of the first main body layer; and a process of configuring the contact tip on an area including the boundary of the first main body layer and the first sacrificial layer; the contact tip is made of a material different from that of the first main body layer and the second main body layer.

[0037] In addition, the process of configuring the contact tip may include: a process of configuring a second metal; and a process of configuring a protective layer on the second metal; the protective layer is made of a material with a smaller size compared to the second metal.

[0038] In addition, the first main body layer, the second main body layer, and the third main body layer may include vertical slits.

[0039] In addition, a method for manufacturing a probe pin according to an embodiment of the present invention may include: a process of preparing a base substrate having a raised portion on an upper surface; a process of configuring a contact tip on an upper surface of the raised portion; and a process of configuring a main body on at least a part of the contact tip and the base substrate.

[0040] In addition, the process of configuring the main body may include: a process of configuring a first main body layer on at least a part of the contact tip and the base substrate; a process of configuring a second main body layer including a connection part and a horizontal slit on the first main body layer; and a process of configuring a third main body layer on the second main body layer.

[0041] On the other hand, a method for manufacturing a probe card according to an embodiment of the present invention may include: a process of overlapping an upper hole of an upper plate and a lower hole of a lower plate by adjacent the upper plate and the lower plate; a process of passing a probe pin through the upper hole and the lower hole; and a process of contacting a spacer portion of the probe pin with the upper hole by raising the upper plate.

[0042] In addition, a method for manufacturing a probe card according to an embodiment of the present invention may include: a process of overlapping an upper hole of an upper plate and a lower hole of a lower plate by adjacent the upper plate and the lower plate; a process of passing a probe pin through the upper hole and the lower hole; and a process of connecting a spacer body including a ground layer among a first spacer body to a fourth spacer body separated by a vertical slit and a horizontal slit to a ground wiring.

[0043] The present invention can adjust the flexibility of the probe pin by configuring a vertical slit and a horizontal slit and thereby provide an effect of easily achieving elastic deformation.

[0044] In addition, the present invention can provide the effect of maintaining excellent high-frequency signal characteristics by adjusting the cross-sectional area of the probe pins.

[0045] In addition, the present invention can provide the effect of easily inserting the probe pins into the upper and lower boards and preventing the inserted probe pins from detaching by using a plurality of spaced-apart bodies spaced apart by vertical slits and / or horizontal slits. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 is a schematic diagram illustrating a probe pin according to an embodiment of the present invention.

[0047] Figure 2 is a schematic diagram illustrating a probe card into which probe pins are inserted according to an embodiment of the present invention.

[0048] Figure 3a and Figure 3b is a schematic diagram illustrating the operation of a probe card into which probe pins are inserted according to an embodiment of the present invention.

[0049] Figure 4a and Figure 4b is a schematic diagram illustrating the front and side views of a probe pin according to an embodiment of the present invention.

[0050] Figure 5a and Figure 5b is a schematic diagram illustrating the front and side views of a probe pin according to an embodiment of the present invention.

[0051] Figure 6a , Figure 6b and Figure 6c is a schematic diagram illustrating the front, side, and overall views of a probe pin according to an embodiment of the present invention.

[0052] Figure 7a , Figure 7b and Figure 7c is a schematic diagram illustrating the front, side, and overall views of a probe pin according to an embodiment of the present invention.

[0053] Figures 8a to 8c is a schematic diagram illustrating the process of the upper board contacting the spacer portion.

[0054] Figures 9a to 9c is a schematic diagram illustrating the process of the upper board passing through the recessed portion.

[0055] Figures 10a to 10d is a schematic diagram illustrating the cross-section of a probe pin according to multiple embodiments of the present invention.

[0056] Figures 11a to 11f It is a schematic diagram illustrating vertical slits and horizontal slits according to multiple embodiments of the present invention.

[0057] Figures 12a to 12f It is a schematic diagram illustrating vertical slits and horizontal slits according to multiple embodiments of the present invention.

[0058] Figures 13a to 15l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0059] Figures 16a to 18l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0060] Figures 19a to 20l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0061] Figures 21a to 22l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0062] Figures 23a to 26l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0063] Figure 27a and Figure 27b It is a schematic diagram illustrating probe pins according to an embodiment of the present invention.

[0064] Figures 28a to 30l It is a schematic diagram illustrating a method for manufacturing probe pins according to an embodiment of the present invention.

[0065] Figures 31a to 31d It is a schematic diagram illustrating an insulating layer separating a main body according to an embodiment of the present invention.

[0066] Figure 32a and Figure 32b It is a schematic diagram illustrating the front and side views of probe pins configured with an insulating layer according to an embodiment of the present invention.

[0067] Figure 32c It is a schematic diagram illustrating an end portion of a first main body according to an embodiment of the present invention.

[0068] Figure 32d It is a schematic diagram illustrating a connection state between a contact tip and a ground wiring according to an embodiment of the present invention.

[0069] Figure 33a and Figure 33bIt is a schematic diagram showing the front and side surfaces of a probe pin configured with an insulating layer according to an embodiment of the present invention.

[0070] Figure 33c It is a schematic diagram showing the end portion of a first main body according to an embodiment of the present invention.

[0071] Figure 33d It is a schematic diagram showing the connection state between a contact tip and a ground wiring according to an embodiment of the present invention.

[0072] Figure 34a and Figure 34b It is a schematic diagram showing the front and side surfaces of a probe pin configured with an insulating layer according to an embodiment of the present invention.

[0073] Figure 34c It is a schematic diagram showing the end portion of a first main body and a ground wiring according to an embodiment of the present invention.

[0074] Figure 34d It is a schematic diagram showing the positional state between a ground pin and a ground wiring according to an embodiment of the present invention.

[0075] Figure 35 It is a schematic diagram showing a probe pin configured with a protrusion according to an embodiment of the present invention.

Reference Signs

[0382] 10: First main body layer

[0383] 11: First mold

[0384] 12: First metal

[0385] 13: First sacrificial layer

[0386] 20: Second main body layer

[0387] 21: Second mold

[0388] 22: Second metal

[0389] 23: Second sacrificial layer

[0390] 30: Third main body layer

[0391] 31: Third mold

[0392] 32: Third metal

[0393] 50: Substrate

[0394] 50a: Protrusion

[0395] 100: Probe pin

[0396] 110: Main body

[0397] 110a: First spaced-apart body

[0398] 110b: Second spaced-apart body

[0399] 110c: Third spaced-apart body

[0400] 110d: Fourth spaced-apart body

[0401] 110e: Fifth spaced-apart body

[0402] 110f: Sixth spaced-apart body

[0403] 110g: Seventh spaced-apart body

[0404] 110h: Eighth spaced-apart body

[0405] 111: First body

[0406] 112: Second body

[0407] 113: Third body

[0408] 116: Over-spacing part

[0409] 117: Connecting band part

[0410] 117a: Concave part

[0411] 118: Insulating layer

[0412] 119: Protruding part

[0413] 120: Slit

[0414] 120a: Vertical slit

[0415] 120b: Horizontal slit

[0416] 130: Contact tip

[0417] 200: Probe card

[0418] 210: Upper plate

[0419] 211: Upper hole

[0420] 220: Lower plate

[0421] 221: Lower hole

[0422] 230: Ground wiring

[0423] GP: Ground pin Detailed implementation mode

[0076] Even if not explicitly described or illustrated in this specification, those of ordinary skill in the art can develop various devices that implement the principles of the present invention and are included in the concept and scope of the present invention. In addition, in principle, all conditional terms and embodiments listed in this specification are only used for the purpose of helping to understand the concept of the present invention and should not be construed as being limited by the specifically listed embodiments and states.

[0077] The above-mentioned objects, features, and advantages can be further clarified by the following detailed description of the invention that can be described by referring to the accompanying drawings, so that those of ordinary skill in the art to which the present invention pertains can easily implement the technical idea of the present invention.

[0078] The embodiments described in this specification will be described with reference to the ideal drawings of the present invention. Depending on manufacturing techniques and / or tolerances, etc., the shape of the illustrated figures may be deformed. Therefore, the embodiments of the present invention are not limited to the specific shapes shown, but include shape changes resulting from the manufacturing process.

[0079] In the process of describing multiple embodiments, for the convenience of description, for components that perform the same function, the same name and the same reference numeral will be assigned even in different embodiments. Furthermore, for the convenience of description, the components and operations that have been described in other embodiments will be omitted.

[0080] Next, it will be based on Figure 1 to briefly explain the terms used in this specification.

[0081] Figure 1 is a schematic diagram illustrating the probe pin 100 according to an embodiment of the present invention.

[0082] Referring to Figure 1 , the expression "at least one of A, B, and C" used in this specification means being composed of one, two, or three of A, B, and C. In addition, the expression "E disposed on D" includes the case where E is disposed in direct contact with D and the case where other components are disposed between D and E and E is disposed in indirect contact. In addition, the width, height, and length are respectively based on the x-axis, y-axis, and z-axis. In addition, the horizontal direction and the side direction are based on the x-axis, the vertical direction, the upper surface direction, and the lower surface direction are based on the y-axis, and the front direction and the back direction are based on the z-axis. However, for the convenience of description, the width in the vertical downward direction and the height of the horizontal slit will all be unified as "width".

[0083] Next, the probe pin 100, the probe card 200 including the probe pin, and its manufacturing method will be described.

[0084] Figure 2 This is a schematic diagram showing a probe card 200 with probe pins 100 inserted therein according to an embodiment of the present invention.

[0085] First, the overall configuration of the probe pins 100 and the probe card 200 will be described.

[0086] The probe card 200 may include probe pins 100. At this time, the probe pins 100 may be electrically connected to a circuit board (not shown). The electrical signals flowing through the probe pins 100 may be used to detect whether there are defects in semiconductor elements.

[0087] Referring to Figure 2 , the probe card 200 may include an upper plate 210 and a lower plate 220. At this time, the upper plate 210 may include upper holes 211 through which the probe pins 100 can pass, and the lower plate 220 may include lower holes 221 through which the probe pins 100 can pass.

[0088] The upper plate 210 and the lower plate 220 may be located at positions spaced apart from each other and are combined by spacers (SP) disposed at the spaced positions.

[0089] The probe card 200 may include a plurality of probe pins 100. At this time, the upper plate 210 may include a plurality of upper holes 211 through which the plurality of probe pins 100 can pass, and the lower plate 220 may include a plurality of lower holes 221 through which the plurality of probe pins 100 can pass.

[0090] The probe card including a plurality of probe pins 100 may be located on a wafer and may be in an over-drive state where the probe pins 100 are brought into contact with electrode pads and pressure is applied, thereby enabling confirmation of defects in semiconductor elements.

[0091] Figure 3a And Figure 3b This is a schematic diagram showing the operation of a probe card with probe pins inserted therein according to an embodiment of the present invention.

[0092] In Figure 3a And Figure 3b , a schematic overview of the probe card 200, the object to be inspected W, and the chuck table CT is shown. According to an embodiment of the method for manufacturing a probe card of the present invention, the chuck table CT can be moved in the horizontal and vertical directions during the over-drive process. In the above-described case, the plurality of probe pins 100 may be formed of straight pins.

[0093] In Figure 3aIn the figure, the state in which the chuck table CT causes the inspection object W to additionally rise toward the probe card 200 while the lower end of the linear pin is in contact with the inspection object W is illustrated. As an example, the chuck table CT can horizontally move in the left direction while the inspection object W is in the state of being additionally raised. In Figure 3a In the figure, the arrow illustrated around the inspection object W indicates the direction in which the chuck table CT moves in the horizontal direction, and the arrow illustrated around the chuck table CT indicates the direction in which the chuck table CT moves in the vertical direction.

[0094] Refer to Figure 3b , the plurality of probe pins 100 formed of linear pins will be bent due to the horizontal movement of the chuck table CT to the left.

[0095] According to the method for manufacturing a probe card according to an embodiment of the present invention, a process of controlling the behavior of the plurality of probe pins 100 by moving the chuck table CT in the horizontal direction and the vertical direction can be performed. Therefore, according to the method for manufacturing a probe card according to an embodiment of the present invention, in the case where the plurality of probe pins 100 are formed of linear pins, the linear pins can be bent and deformed by the chuck table CT.

[0096] As referred to Figure 3a and Figure 3b As described, according to the method for manufacturing a probe card according to an embodiment of the present invention, a process of controlling the behavior of the plurality of probe pins 100 by moving the chuck table CT in the horizontal direction and the vertical direction can be performed. Therefore, according to the method for manufacturing a probe card according to an embodiment of the present invention, rapid assembly with the boards 210 and 220 can be achieved by forming the plurality of probe pins 100 of linear pins, and the probe pins 100 can be bent and deformed in a desired direction by the chuck table CT.

[0097] As described above, according to the method for manufacturing a probe card according to an embodiment of the present invention, the driving of the plurality of probe pins 100 can be controlled by the chuck table CT, so that while minimizing the problems of breakage, damage, and scratching of the probe pins 100, the electrical characteristics test of the semiconductor element can be effectively performed.

[0098] Next, the probe pins 100 according to multiple embodiments of the present invention will be specifically described.

[0099] Figure 4a and Figure 4b are schematic diagrams illustrating the front and side views of the probe pins 100 according to an embodiment of the present invention. Figure 5a and Figure 5bThe diagram is a schematic diagram illustrating the front and side views of the probe pin 100 according to an embodiment of the present invention. Figure 6a , Figure 6b as well as Figure 6c It is a schematic diagram illustrating the front, side and overall view of the probe pin 100 according to an embodiment of the present invention. Figure 7a , Figure 7b as well as Figure 7c It is a schematic diagram illustrating the front, side and overall view of the probe pin 100 according to an embodiment of the present invention.

[0100] See also Figure 4a as well as Figure 4b The probe pin 100 according to the embodiment of the present invention may include a body 110 and a slit 120 formed through a portion of the body 110 .

[0101] The probe pin 100 may be formed by a cobra-shaped pin, a straight-shaped pin or a deformed straight-shaped pin, but is not limited thereto. Therefore, the main body 110 may be formed by extending along one side. The main body 110 may be straight-shaped, or may be configured with at least one curved portion curved along a horizontal direction.

[0102] The body 110 may include a first body 111 constituting one side of the body 110 , a second body 112 extended from the first body 111 and constituting a middle portion of the body 110 , and a third body 113 extended from the second body 112 and constituting the other side of the body 110 .

[0103] The slits 120 may include vertical slits 120 a that penetrate the horizontal surface HS of the body 110 and are formed in a vertical direction.

[0104] The main body 110 may be configured with one or more curved portions that are curved along a horizontal direction. The horizontal direction may refer to a +x direction or a -x direction. That is, the main body 110 may be configured in a curved form. The main body 110 may further elastically deform in the curved direction in an overdriven state. For example, when the main body 110 is curved from the front to the rear along the +x direction, the rear portion of the main body 110 may elastically deform in the +x direction.

[0105] In addition, the body 110 may include a first body 111, a second body 112, and a third body 113. The first body 111 may constitute one side of the body 110 and may be connected to the circuit substrate. Here, connection refers to electrical connection, and thus may include direct connection or indirect connection.

[0106] The second body 112 may be formed to extend from the first body 111 , and may constitute a middle portion of the body 110 .

[0107] The third body 113 can be formed by extending from the second body 112 and can constitute one side of the body 110. The third body 113 can be in direct contact with the electrode pad on the wafer or in indirect contact through the contact tip 130, thereby transmitting electrical signals.

[0108] The body 110 can be made of metal, and the current carrying capacity (CCC) can be increased by using a metal with a higher conductivity.

[0109] The body 110 can be composed of copper (Cu), silver (Ag), gold (Au), rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (P), or an alloy thereof. In addition, the body 110 can be composed of a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiP) alloy, a nickel-manganese (NiMn) alloy, a nickel-cobalt (NiCo) alloy, or a nickel-tungsten (NiW) alloy. However, the material of the body 110 is not limited to the listed materials.

[0110] The slit 120 can be formed by penetrating a part of the area of the body 110. In addition, the slit 120 can include a vertical slit 120a. The vertical slit 120a can be formed by penetrating the horizontal plane of the body 110. Specifically, the vertical slit 120a can be formed by extending from the upper surface of the body 110 to the lower surface and can be formed by extending along the length direction of the body 110. At this time, the vertical slit 120a can be formed by bending along the curved shape of the body 110.

[0111] The vertical slit 120a can increase the flexibility of the body 110, so that it can elastically deform smoothly in the over-driven state. In addition, the vertical slit 120a can reduce the cross-sectional area perpendicular to the length direction of the body 110, thereby preventing signal attenuation of high-frequency signals.

[0112] According to the skin effect, alternating current will concentrate on the surface of the conductor and flow. Therefore, by increasing the surface area of the body 110, signal attenuation can be prevented and the current carrying capacity can be increased accordingly. Therefore, the vertical slit 120a and the horizontal slit 120b can achieve the effect of increasing the current carrying capacity by increasing the surface area of the body 110.

[0113] See Figure 5a and Figure 5b, the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a slit 120. The main body 110 may include a first main body 111, a second main body 112, and a third main body 113. The slit 120 may include a horizontal slit 120b formed by penetrating a vertical plane of the main body 110 and extending in a horizontal direction. Among them, regarding the same components as those described above, the related descriptions thereof will be omitted.

[0114] The horizontal slit 120b may be formed by penetrating the vertical plane VS of the main body 110. Specifically, the horizontal slit 120b may extend from the left side surface of the main body 110 to the right side surface, and may extend along the length direction of the main body 110. At this time, the horizontal slit 120b may be formed along the shape of the main body 110.

[0115] The horizontal slit 120b may increase the flexibility of the main body 110, so that it can elastically deform smoothly in the overdrive state. In addition, the vertical slit 120a may reduce the cross-sectional area of the main body 110, thereby preventing signal attenuation of high-frequency signals.

[0116] See Figure 6a , Figure 6b and Figure 6c , the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a slit 120. The main body 110 may include a first main body 111, a second main body 112, and a third main body 113. The slit 120 may include a vertical slit 120a and a horizontal slit 120b. Among them, regarding the same components as those described above, the related descriptions thereof will be omitted.

[0117] In addition, at least one of the vertical slit 120a and the horizontal slit 120b of the probe pin 100 according to an embodiment of the present invention may be formed on the second main body 112.

[0118] The slit 120 may include both a vertical slit 120a and a horizontal slit 120b. At this time, the vertical slit 120a may be formed by penetrating a horizontal plane corresponding to all or a part of the length of the main body 110, and the horizontal slit 120b may be formed by penetrating a vertical plane corresponding to all or a part of the length of the main body 110 that is not penetrated by the vertical slit 120a. That is, the vertical slit 120a and the horizontal slit 120b may be formed in a non-crossing manner.

[0119] Furthermore, the vertical slit 120a and the horizontal slit 120b may be formed by penetrating the horizontal plane and the vertical plane of the second main body 112, respectively.

[0120] The vertical slit 120a and the horizontal slit 120b can further increase the flexibility of the main body 110 by being configured simultaneously, enabling it to elastically deform smoothly in the over-driven state. In addition, the vertical slit 120a and the horizontal slit 120b can further reduce the cross-sectional area of the main body 110 by being configured simultaneously, thereby preventing signal attenuation of high-frequency signals.

[0121] Furthermore, the vertical slit 120a and the horizontal slit 120b can produce a narrow-spacing effect by being configured simultaneously. For example, when only the vertical slit 120a is configured, there may be a risk of damaging semiconductor elements due to insufficient flexibility of the main body 110, and when only the horizontal slit 120b is configured, there may also be a risk of damaging semiconductor elements due to insufficient flexibility of the main body 110.

[0122] When multiple vertical slits 120a are configured, although the flexibility of the main body 110 can be increased, there will be a problem that narrow-spacing cannot be achieved due to the widening of the width of the main body 110 (the arrangement direction of the multiple vertical slits 120a).

[0123] Therefore, the main body 110 can further increase the flexibility of the main body 110 by simultaneously including the vertical slit 120a and the horizontal slit 120b, and can also produce a narrow-spacing effect.

[0124] Refer to Figure 7a 、 Figure 7b and Figure 7c , the probe pin 100 according to an embodiment of the present invention may include a vertical slit 120a and a horizontal slit 120b. At least one of the vertical slit 120a and the horizontal slit 120b can extend from the second main body 112 to the end of the first main body 111, thereby opening one side of the first main body 111.

[0125] The vertical slit 120a can extend from the second main body 112 to the first main body 111. The vertical slit 120a can open one side of the first main body 111. That is, the vertical slit 120a can extend to the rear surface of the end, thereby forming a vertical-shaped opening at the rear surface of the end.

[0126] The horizontal slit 120b can extend from the second main body 112 to the first main body 111. The horizontal slit 120b can open one side of the first main body 111. That is, the horizontal slit 120b can extend to the rear surface of the end of the main body 110, thereby forming a horizontal-shaped opening at the rear surface of the end.

[0127] Furthermore, the vertical slit 120a and the horizontal slit 120b can extend from the second body 112 to the first body 111. Both the horizontal slit 120b and the horizontal slit 120b can open one side of the first body 111. That is, the vertical slit 120a and the horizontal slit 120b can extend to the rear surface of the end of the body 110, thereby forming a cross-shaped opening.

[0128] The vertical slit 120a and / or the horizontal slit 120b can further increase the flexibility of the body 110 by extending to the rear surface of the end of the body 110, so that it can smoothly undergo elastic deformation in the overdrive state, and can also further reduce the cross-sectional area of the body 110, thereby preventing signal attenuation of high-frequency signals. At the same time, a narrow-spacing effect can also be produced.

[0129] In addition, since the vertical slit 120a and / or the horizontal slit 120b extend to the first body 111, the flexibility of the first body 111 can be further increased. That is, while increasing the flexibility of the body 110, the flexibility of the relatively lower third body 113 can be maintained. By this means, the third body 113 can be deformed less, thereby reducing the force applied to the lower hole 221 in the lower plate 220, and thereby reducing the wear of the lower hole 221, and it can also be made to contact the semiconductor element more accurately.

[0130] In addition, the vertical slit 120a and the horizontal slit 120b according to the embodiments of the present invention can cross each other.

[0131] For example, the body 110 can be implemented in a form in which the vertical slit 120a is arranged on the second body 112 and the horizontal slit 120b is arranged on the first body 111. In the above-mentioned case, since the vertical slit 120a and the horizontal slit 120b are not perpendicular to each other, the cross-sectional areas of the second body 112 and the first body 111 can be stably maintained. Even so, by arranging the vertical slit 120a on the second body 112, a relatively large lateral flexibility can be achieved.

[0132] On the contrary, the body 110 can be implemented in a form in which the vertical slit 120a and the horizontal slit 120b are arranged on the second body 112, the body 110 can also be implemented in a form in which the vertical slit 120a and the horizontal slit 120b are arranged on the first body 111, and the body 110 can also be implemented in a form in which the vertical slit 120a and the horizontal slit 120b are arranged on both the second body 112 and the first body 111. By arranging the vertical slit 120a and the horizontal slit 120b in a crossed manner, the overall cross-sectional area of the body 110 can be greatly reduced, and the flexibility can also be further increased.

[0133] Next, a method of manufacturing a probe pin 100 including a spacer portion 116 and a probe card 200 including the probe pin 100 according to multiple embodiments of the present invention will be described.

[0134] Figures 8a to 8c It is a schematic diagram illustrating the process of the upper plate 210 contacting the spacer portion 116.

[0135] Refer to Figures 8a to 8c , the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a vertical slit 120a. At this time, the main body 110 may include a first spaced main body 110a and a second spaced main body 110b spaced apart from each other by the vertical slit 120a.

[0136] The first spaced main body 110a to the eighth spaced main body 110h described in the present invention are concepts distinguished for the convenience of explaining multiple spaced main bodies, and their positions are not limited by the drawings and embodiments. For example, the first spaced main body 110a may refer to any one of the multiple spaced main bodies.

[0137] Multiple spaced main bodies may be formed on the first main body 111 and the second main body 112. In the above-described case, since no slit 120 is formed on the third main body 113, the main body 110 is not divided.

[0138] In other words, spaced main bodies may be arranged on the first main body 111 and the second main body 112, but the third main body 113 may be integrally formed.

[0139] At least one of the first spaced main body 110a and the second spaced main body 110b may include a spacer portion 116 bent in a direction in which the spacing distance from the other spaced main body increases. In addition, the first spaced main body 110a and the second spaced main body 110b may each include a spacer portion 116 bent in a direction in which the spacing distance between them increases.

[0140] That is, the spacer portion 116 may be included only in the first spaced main body 110a, may be included only in the second spaced main body 110b, or may be included in both the first spaced main body 110a and the second spaced main body 110b. Since the first spaced main body 110a can maintain a state where the vertical cross-sectional area along the length direction is the same, by including the spacer portion 116 in the first spaced main body 110a, it can be bent in a manner of protruding in the lateral (+x) direction. In addition, since the second spaced main body 110b can maintain a state where the vertical cross-sectional area along the length direction is the same, by including the spacer portion 116 in the second spaced main body 110b, it can be bent in a manner of protruding in the lateral (-x) direction.

[0141] The probe card 200 may include an upper plate 210 configured with upper holes 211 and a lower plate 220 configured with lower holes 221. The upper holes 211 and the lower holes 221 of the probe card 200 are available for the main body 110 to pass through. The first main body 111 may be located in the upper holes 211, and the third main body 113 may be located in the lower holes 221.

[0142] Furthermore, the probe card 200 may further include an intermediate plate (not shown) configured with intermediate holes. The intermediate holes (not shown) of the probe card 200 are available for the main body 110 to pass through, and the second main body 112 may be located in the intermediate holes.

[0143] Unlike Figures 8a to 8b , the overspacing part 116 may be located in at least one of the first main body 111, the second main body 112, and the third main body 113. The overspacing part 116 of the first main body 111 may contact the upper holes 211 and be fixed to the upper plate 210, and the overspacing part 116 of the second main body 112 may contact the intermediate holes and be fixed to the intermediate plate.

[0144] The probe pins 100 and / or the main body 110 may be fixed to the probe card 200 through the overspacing part 116, thereby providing an effect of preventing detachment from the probe card 200.

[0145] On the other hand, referring back to Figures 7a to 7c , the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a horizontal slit 120b. At this time, the main body 110 may include a first spaced main body 110a and a second spaced main body 110b spaced apart from each other by means of the horizontal slit 120b.

[0146] That is, the first spaced main body 110a and the second spaced main body 110b are not limited to being spaced apart from each other by means of a vertical slit 120a, and also include the case of being spaced apart from each other by means of a horizontal slit 120b. The effects of the first spaced main body 110a and the second spaced main body 110b spaced apart from each other by means of the horizontal slit 120b are as described above.

[0147] On the other hand, referring back to Figures 7a to 8c , the probe pin 100 according to an embodiment of the present invention may include a main body 110, a vertical slit 120a, and a horizontal slit 120b. At this time, the main body 110 may include a first spaced main body 110a, a second spaced main body 110b, a third spaced main body 110c, and a fourth spaced main body 110d spaced apart from each other by means of the vertical slit 120a and the horizontal slit 120b.

[0148] At least one of the first spacer body 110a to the fourth spacer body 110d may include an over-spacer portion 116 that bends in a direction in which the spacer distance from the remaining at least one spacer body other than the at least one spacer body increases.

[0149] Specifically, the first spacer body 110a and the second spacer body 110b may each include an over-spacer portion 116 that bends in a direction in which the spacer distance from the third spacer body 110c and the fourth spacer body 110d increases. In contrast, the first spacer body 110a and the third spacer body 110c may each include an over-spacer portion 116 that bends in a direction in which the spacer distance from the second spacer body 110b and the fourth spacer body 110d increases.

[0150] That is, at least one of the first spacer body 110a to the fourth spacer body 110d may include an over-spacer portion 116. At this time, the spacer body including the over-spacer portion 116 may bend in a direction in which the spacer distance from the spacer body not including the over-spacer portion 116 increases.

[0151] As described above, the over-spacer portion 116 may be located in at least one of the first body 111, the second body 112, and the third body 113.

[0152] The body 110 or the probe pin 100 including the over-spacer portion 116 may be disposed on the probe card 200.

[0153] Refer back to Figures 8a to 8c , a method of manufacturing the probe card 200 according to an embodiment of the present invention may include: a process of overlapping the upper hole 211 of the upper plate 210 and the lower hole 221 of the lower plate 220 by adjacent the upper plate 210 and the lower plate 220; a process of passing the probe pin 100 through the upper hole 211 and the lower hole 221; and a process of contacting the over-spacer portion 116 of the probe pin 100 with the upper hole 211 by raising the upper plate 210.

[0154] First, a process of overlapping the upper hole 211 of the upper plate 210 and the lower hole 221 of the lower plate 220 by adjacent the upper plate 210 and the lower plate 220 of the probe card 200 may be performed.

[0155] The upper plate 210 may move downward and be adjacent to the lower plate 220. At this time, the upper hole 211 and the lower hole 221 may form a continuous one hole that overlaps and is vertically aligned with each other. In the above-described case, the probe pin 100 and / or the body 110 may dispose the over-spacer portion 116 on the first body 110.

[0156] Next, a process of passing the probe pin 100 through the upper hole 211 and the lower hole 221 may be performed.

[0157] In a state where the upper plate 210 is moved downward and overlapped, the main body 110 or the probe pin 100 may be passed through the upper hole 211 and the lower hole 221.

[0158] Next, a process of bringing the spaced portion 116 of the probe pin 100 into contact with the upper hole 211 by raising the upper plate 210 may be performed.

[0159] When the upper plate 210 is moved downward, the spaced distance between the first spaced main body 110a and the second spaced main body 110b may be reduced, so as to have a thickness smaller than that of the upper hole 211. This is a phenomenon that may temporarily occur when the upper plate 210 is moved.

[0160] The upper plate 210 may be moved upward to contact the spaced portion 116. That is, the spaced portion 116 may be brought into contact with the upper hole 211 and fixed to the probe card 200. At this time, the spaced portion 116 may be deformed by the force in the inward direction received from the upper hole 211, and the first spaced main body 110a and the second spaced main body 110b may be brought into contact with each other.

[0161] The sum of the widths of the first spaced main body 110a, the second spaced main body 110b, and the slit 120 therebetween may be greater than the upper hole 211. Thereby, the first spaced main body 110a and the second spaced main body 110b may be fixed by the force received from the upper hole 211.

[0162] The main body 110 may be arranged in such a manner that it is composed of the first spaced main body 110a and the second spaced main body 110b and spaced apart from each other, or composed of the first spaced main body 110a to the fourth spaced main body 110d and spaced apart from each other. The spaced main bodies having a structure spaced apart from each other may be deformed in the inward direction even when the upper plate 210 is raised, so that the upper hole 211 of the upper plate 210 is easily located in the first main body 111.

[0163] Next, the probe pin 100 including the connection band portion 117 and the recessed portion 117a according to multiple embodiments of the present invention will be described.

[0164] Figures 9a to 9c It is a schematic diagram illustrating the process of the upper plate 210 passing through the recessed portion 117a.

[0165] Refer to Figures 9a to 9c, the probe pin 100 according to an embodiment of the present invention may include a main body 110, a vertical slit 120a, and a connection band portion 117, and may further include a recessed portion 117a. At this time, the main body 110 may include a first separated main body 110a and a second separated main body 110b separated by the vertical slit 120a.

[0166] The connection band portion 117 may connect the inner side surface of the first separated main body 110a and the inner side surface of the second separated main body 110b. When the probe pin 100 includes only the vertical slit 120a, the connection band portion 117 may be formed to extend in the horizontal direction in order to connect the first separated main body 110a and the second separated main body 110b. Herein, the inner side surface may refer to the surface facing the inner direction in the first separated main body 110a and the second separated main body 110b or the surfaces facing each other.

[0167] In contrast, when the probe pin 100 includes only the horizontal slit 120b, the connection band portion 117 may be formed to extend in the vertical direction in order to connect the first separated main body 110a and the second separated main body 110b.

[0168] The recessed portion 117a may be formed only on the outer side surface of the first separated main body 110a, or may be formed only on the outer side surface of the second separated main body 110b. Furthermore, the recessed portion 117a may be formed on the outer side surfaces of the first separated main body 110a and the second separated main body 110b, respectively. Herein, the outer side surface may refer to the surface exposed to the outside of the main body 110, or may refer to the surface facing the inner side surface.

[0169] Specifically, the recessed portion 117a may be formed on the outer side surfaces of the first separated main body 110a and the second separated main body 110b, respectively, and the connection band portion 117 may be formed on the inner side surfaces.

[0170] On the other hand, the main body 110 may include a first separated main body 110a, a second separated main body 110b, a third separated main body 110c, and a fourth separated main body 110d separated by the vertical slit 120a and the horizontal slit 120b.

[0171] The connection portion 117 may connect the inner side surface of the first separated main body 110a and at least one of the inner side surfaces of the second separated main body 110b to the fourth separated main body 110d.

[0172] The recessed portion 117a may be recessed and formed on the outer side surface of the first spaced main body 110a facing the inner side surface of the first spaced main body 110a to which the connection belt portion 117 is connected, and on the outer side surface of at least one of the second to fourth spaced main bodies 110b to 110d facing the inner side surface of at least one of them. In addition, the recessed portion 117a may be recessed and formed on the outer side surface of the first spaced main body 110a or the at least one outer side surface.

[0173] The connection belt portion 117 may be formed to connect at least two of the first to fourth spaced main bodies 110a to 110d to each other. The connection belt portion 117 may be formed to extend horizontally to connect the first spaced main body 110a and the second spaced main body 110b and the third spaced main body 110c and the fourth spaced main body 110d, and may be formed to extend vertically to connect the first spaced main body 110a and the third spaced main body 110c and the second spaced main body 110b and the fourth spaced main body 110d.

[0174] The connection belt portion 117 may divide the slit 120 into a plurality of parts. The connection belt portion 117 has the effect of reducing the flexibility of the main body 110. In addition, the connection belt portion 117 may cause the plurality of spaced main bodies to deform in one direction in an over-driven state. Thereby, the possibility that the plurality of spaced main bodies formed on one probe pin 100 bend in different directions from each other can be prevented. The connection belt portion 117 may prevent short-circuiting with the adjacent probe pin 100 due to the plurality of spaced main bodies deforming in different directions from each other through the slit 120.

[0175] Even when the upper plate 210 rises, the plurality of spaced main bodies having a structure spaced apart from each other can deform in the inner direction, so that the upper hole 211 of the upper plate 210 can be easily positioned at the first main body 111.

[0176] At this time, the recessed portion 117a is disposed on the outer side surface of the main body 110 and recessed and formed in the inner direction, so that it can easily pass through the upper hole 211 of the upper plate 210.

[0177] The connection belt portion 117 may induce the plurality of spaced main bodies to deform in one direction during the over-driving process.

[0178] However, during the process of assembling the probe pin 100 to the upper plate 210 and the lower plate 220, when the upper hole 211 passes through the connection portion 117, it may prevent the plurality of spaced main bodies from deforming in the inner direction, thereby hindering the movement of the upper plate 210. At this time, the recessed portion 117a can enable the upper hole 211 of the upper plate 210 to easily pass through the main body 110, thereby playing a role in supplementing and perfecting the connection belt portion 117.

[0179] Next, the probe pin 100 including a plurality of vertical slits 120a and horizontal slits 120b according to an embodiment of the present invention will be described.

[0180] Figures 10a to 10d It is a schematic diagram illustrating a cross-section of the probe pin 100 according to multiple embodiments of the present invention.

[0181] Refer to Figures 10a to 10d According to an embodiment of the present invention, the probe pin 100 may include vertical slits 120a and horizontal slits 120b. At this time, at least one of the vertical slits 120a and the horizontal slits 120b may be configured in multiple numbers.

[0182] The probe pin 100 may include slits 120, and the slits 120 may include one or more vertical slits 120a. In addition, the slits 120 may include one or more horizontal slits 120b. Furthermore, the slits 120 may simultaneously include multiple vertical slits 120a and multiple horizontal slits 120b.

[0183] Figure 10a The end faces of multiple spaced-apart bodies separated by one vertical slit 120a and one horizontal slit 120b are illustrated. At this time, the body 110 may include a first spaced-apart body 110a to a fourth spaced-apart body 110d.

[0184] Figure 10b The end faces of multiple spaced-apart bodies separated by two vertical slits 120a and one horizontal slit 120b are illustrated. At this time, the body 110 may include a first spaced-apart body 110a to a sixth spaced-apart body 110f.

[0185] Figure 10c The end faces of multiple spaced-apart bodies separated by three vertical slits 120a and one horizontal slit 120b are illustrated. At this time, the body 110 may include a first spaced-apart body 110a to an eighth spaced-apart body 110h.

[0186] Figure 10d The multiple spaced-apart bodies separated by one vertical slit 120a and two horizontal slits 120b are illustrated. At this time, the body 110 may include a first spaced-apart body 110a to a sixth spaced-apart body 110f.

[0187] When the body 110 includes multiple spaced-apart bodies, one side of the body 110 may be formed in a forked shape. The more slits the probe pin 100 includes, the higher the flexibility it can have.

[0188] In Figures 10a to 10dBased on this, when the thickness (longitudinal direction) of the spacer body is greater than the width (lateral direction), the lateral flexibility of the main body 110 and / or the probe pins 110 will be further increased. On the contrary, when the thickness of the spacer body is less than the width, the lateral flexibility of the main body 110 and / or the probe pins 100 can be further reduced.

[0189] In addition, when only the number of the vertical slits 120a is increased, it may not be possible to achieve narrow pitch due to a further increase in the width of the main body 110. Therefore, the main body 110 can be further increased in flexibility by providing the horizontal slits 120b. On the other hand, in the overdrive state, when the longer edge in the cross-section of the spacer body is in the deformation direction of the pins, the flexibility can be further increased.

[0190] The present invention can change the number of the vertical slits 120a and the horizontal slits 120b to change the shapes of the probe pins 100, the main body 110, and the plurality of spacer bodies, and thereby adjust the flexibility of the probe pins 100.

[0191] Next, various forms of the vertical slits 120a and the horizontal slits 120b according to the embodiments of the present invention will be described.

[0192] Figures 11a to 11f are schematic views illustrating the vertical slits 120a and the horizontal slits 120b according to multiple embodiments of the present invention. Figures 12a to 12f are schematic views illustrating the vertical slits 120a and the horizontal slits 120b according to multiple embodiments of the present invention.

[0193] Refer to Figures 11a to 12f , the vertical slits 120a and the horizontal slits 120b of the probe pins 100 according to the embodiments of the present invention can have different widths or lengths from each other.

[0194] Refer to Figure 11a and Figure 11b , the probe pins 100 can include vertical slits 120a and horizontal slits 120b having the same width and the same length.

[0195] Refer to Figure 11c and Figure 11d , the probe pins 100 can include vertical slits 120a and horizontal slits 120b having the same width. In addition, the probe pins 100 can include vertical slits 120a and horizontal slits 120b having different lengths from each other.

[0196] Refer to Figure 11e and Figure 11f, the probe pin 100 may include vertical slits 120a and horizontal slits 120b having different widths from each other. In addition, the probe pin 100 may include vertical slits 120a and horizontal slits 120b having the same length.

[0197] See Figures 12a to 12d , the probe pin 100 may include vertical slits 120a and horizontal slits 120b having the same width. In addition, the probe pin 100 may include vertical slits 120a and horizontal slits 120b on the second body 112 at the same time. Furthermore, the probe pin 100 may form at least one of the vertical slit 120a and the horizontal slit 120b by extending on the first body 111, and the at least one slit 120 may form an opening by extending to the end face of the first body 111.

[0198] See Figure 12e and Figure 12f , the probe pin 100 may include different numbers of vertical slits 120a and horizontal slits 120b from each other. At this time, the vertical slits 120a and the horizontal slits 120b are not limited to the same width and length, but may be selected in the form as described above.

[0199] The probe pin 100 may adjust the flexibility of the probe pin 100 and / or the body 110 by changing the number and shape of the vertical slits 120a and the horizontal slits 120b, and may also achieve the effect of maintaining high-frequency characteristics by reducing the cross-sectional area of the probe pin 100 and / or the body 110.

[0200] Next, a probe pin 100 including an over-contact tip 130 and a manufacturing method of the probe pin 100 according to an embodiment of the present invention will be described.

[0201] Figures 13a to 15l is a schematic diagram illustrating a manufacturing method of a probe pin 100 according to an embodiment of the present invention.

[0202] See Figures 13a to 15l , the probe pin 100 according to an embodiment of the present invention may include a body 110 and slits 120. The body 110 may include a first body 111 to a third body 113, and the slits 120 may include vertical slits 120a and horizontal slits 120b. Furthermore, the probe pin 100 may further include a contact tip 130 that contacts an object to be inspected by being located in an end region of the third body 113.

[0203] The contact tip 130 may be made of the same or different material as the main body 110. In addition, the contact tip 130 may include a rhodium layer 130a, 22a, 32a made of a material containing rhodium. Furthermore, the contact tip 130 may be made of a single metal layer or composed of multiple metal layers stacked on top of each other.

[0204] The contact tip 130 may be located at the end region of the third main body 113. The contact tip 130 may be in direct contact with the object to be inspected. Therefore, the contact tip 130 may be formed of a metal with higher wear resistance and / or hardness compared to the main body 110, and formed of a metal with higher electrical conductivity compared to the main body 110. By doing so, the wear resistance and / or hardness of the probe pin 100 can be maintained at a high level, and its current-carrying capacity can be increased.

[0205] The contact tip 130 may be composed of copper (Cu), silver (Ag), gold (Au), rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (P), or an alloy thereof. In addition, the main body 110 may be composed of a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiP) alloy, a nickel-manganese (NiMn) alloy, a nickel-cobalt (NiCo) alloy, or a nickel-tungsten (NiW) alloy. However, the material of the contact tip 130 is not limited to the materials listed.

[0206] Since the strength of the contact tip 130 also weakens when its thickness is too thin, it is preferably formed with a thickness of about 10 μm.

[0207] The probe pin 100 can be manufactured by plating with gold after constructing the mold. At this time, the probe pin 100 can be manufactured in the vertical direction, and the probe pin 100 may include a first main body layer 10, a second main body layer 20, and a third main body layer 30.

[0208] The first main body layer 10 may form the lower layer of the probe pin 100. The second main body layer 20 may be located on the first main body layer 10 and include a horizontal slit 120b. The third main body layer 30 may be located on the second main body layer 20 and form the upper layer. The distinction between each layer will be made based on the horizontal slit 120b.

[0209] In the following figures related to the manufacturing method of the probe pin 100, (a) shows the front of the probe pin 100, and (b) shows the side of the probe pin 100. In addition, (c) shows the side of the probe pin 100, and (d) shows the front of the probe pin 100.

[0210] See Figure 13a and Figure 13b, the probe pin 100 may include a main body 110, a horizontal slit 120b, and a contact tip 130, and may further include a vertical slit 120a.

[0211] See Figures 13c to 13l , Figures 14c to 14l and Figures 15c to 15l , a method of manufacturing the probe pin 100 according to an embodiment of the present invention may include: a process of preparing a substrate 50; a process of disposing a first main body layer 10 on the substrate 50; a process of disposing a second main body layer 20 on the first main body layer 10; a process of disposing a third main body layer 30 on the second main body layer 20; and a process of separating the first main body layer 10 to the third main body layer 30.

[0212] The substrate 50 provides a space for forming the main body 110, which is a component of the probe pin 100, and can be separated after manufacturing the probe pin 100.

[0213] First, the process of disposing the first main body layer 10 on the substrate 50 can be performed.

[0214] The first main body layer 10 may refer to the lower layer of the probe pin 100. Specifically, the first main body layer 10 may refer to the layer located below the horizontal slit 120b. Since the probe pin 100 has a horizontally curved shape, the first main body layer 10 may also have a horizontally curved shape. That is, the first main body layer 10 may include at least one curved portion that is curved in the horizontal direction.

[0215] See Figures 13c to 13e and Figures 13h to 13j , the process of disposing the first main body layer 10 may include a process of disposing a first mold 11, a process of disposing a first metal 12, and a process of removing the first mold 11.

[0216] The process of disposing the first mold 11 can be performed through a PR layer configuration process, an exposure process, and a development process. At this time, the PR layer refers to a photoresist layer and can be used as a mold for plating the first metal 12. The exposure can determine the area for removing a part of the PR layer. The development can remove the PR layer in the determined area. The first mold 11 can form an opening 14 that requires plating the first metal 12 by performing the PR layer configuration process, the exposure process, and the development process. The first mold 11 may include an opening 14 corresponding to the first main body layer 10. In addition, the first mold 11 may include a vertical portion 15 corresponding to the vertical slit 120a.

[0217] The process of disposing the first metal 12 may include a gold plating process and a chemical mechanical polishing (CMP) process for the first metal 12. The first metal 12 may be formed by gold plating on the opening 14 of the first mold 11. The material for gold plating may be the same as the material constituting the main body 110 as described above. Next, the first metal 12 may be planarized by chemical mechanical polishing (CMP).

[0218] The process of removing the first mold 11 may be performed by forming the first metal 12 and removing the residual PR remaining on the side surface of the first metal 12. Thereby, the first main body layer 10 may be formed. At this time, the first main body layer 10 may include a vertical slit 120a.

[0219] Refer to Figures 13f to 13g 、 Figures 13k to 13l 、 Figures 14c to 14e and Figures 14h to 14j , the process of disposing the second main body layer 20 may include the process of disposing the first sacrificial layer 13, the process of disposing the second mold 21, the process of disposing the second metal 22, and the process of removing the second mold 21.

[0220] The process of disposing the first sacrificial layer 13 may include a gold plating process and a chemical mechanical polishing (CMP) process for the first sacrificial layer 13. The first sacrificial layer 13 may be disposed to form the second mold 21 on the upper part. The first sacrificial layer 13 may be formed by gold plating so as to cover the side surface and the upper surface of the first main body layer 10. As Figure 13f shown, the first sacrificial layer 13 may be formed in a manner that a part thereof protrudes. Next, the first sacrificial layer 13 and / or the first main body layer 10 may be planarized by chemical mechanical polishing. The first sacrificial layer 13 may be formed of a metal material different from that of the first main body layer 10 to the third main body layer 30. The first sacrificial layer 13 may be formed of a material that enables selective etching. As an example thereof, it may be formed of copper (Cu) or a material containing copper. This is the same as the second sacrificial layer 23 described later.

[0221] The process of disposing the second mold 21 may be performed through a PR layer disposing process, an exposure process, and a development process. Among them, the second mold 21 may include at least one opening 24 corresponding to the second main body layer 20. Since the second main body layer 20 includes a horizontal slit 120b, the opening 24 may also be formed in two or more separated parts. The opening 24 of the second mold 21 may be an area for forming a connection part and a contact tip 130.

[0222] The first opening portion 24a of the second mold 21 may be located on the first main body layer 10 of the third main body 113 region. In the above-described case, the first opening portion 24a may be formed in a manner corresponding to the second main body layer 20 that forms the third main body 113 region. Thereby, a connection portion and / or a contact tip 130 that constitute the second main body layer 20 may be formed on the first main body layer 10.

[0223] In addition, the first opening portion 24a of the second mold 21 may extend across the third main body 113 region and be disposed on the first sacrificial layer 13. In the above-described case, the first opening portion 24a may be formed in a manner corresponding to the contact tip 130.

[0224] The second opening portion 24b of the second mold 21 may be located on the first main body layer 10 of the first main body 111 region. In the above-described case, the second opening portion 24b may be formed in a manner corresponding to the second main body layer 20 that forms the first main body 111 region. At this time, since a connection portion is formed in the second opening portion 24b, a probe pin 100 having an annular slit 120 as shown in Figures 6a to 6c may be manufactured.

[0225] The second mold 21 may also include only the first opening portion 24a. In the above-described case, since no connection portion is formed, a probe pin 100 having an open slit 120 as shown in Figures 7a to 7c may be manufactured.

[0226] The process of disposing the second metal 22 may include a second metal 22 gold plating process and a chemical mechanical polishing (CMP) process. The second metal 22 may be formed by gold plating on at least one opening portion 24 of the second mold 21. The gold plating material may be constituted by the same or different materials as the first metal 12 described above, but is not limited thereto. Next, the second metal 22 may be planarized by chemical mechanical polishing.

[0227] The process of removing the second mold 21 may be performed by forming the second metal 22 and removing the residual PR remaining on the side surfaces of the second metal 22. Thereby, the second main body layer 20 may be formed. At this time, the second main body layer 20 may include a contact tip 130 and a horizontal slit 120b, and may also include a vertical slit 120a.

[0228] Referring to Figures 14f to 14g 、 Figures 14k to 14l 、 Figures 15c to 15e and Figures 15h to 15j , the process of disposing the third main body layer 30 may include the process of disposing the second sacrificial layer 23, the process of disposing the third mold 31, the process of disposing the third metal 32, and the process of removing the third mold 31.

[0229] The process of disposing the second sacrificial layer 23 may include a gold plating process and a chemical mechanical polishing (CMP) process for the second sacrificial layer 23. The second sacrificial layer 23 may be disposed to form the third mold 31 on the upper part. The second sacrificial layer 23 may be formed by gold plating so as to cover the side surface and the upper surface of the second main body layer 20. As Figure 14f shown, the second sacrificial layer 23 may be formed in a manner that a part thereof protrudes. Next, the second sacrificial layer 23 and / or the second main body layer 20 may be planarized by chemical mechanical polishing.

[0230] The process of disposing the third mold 31 may be performed through a PR layer disposing process, an exposure process, and a development process. Among them, the third mold 31 may include an opening 34 corresponding to the third main body layer 30. In addition, the third mold 31 may include a vertical portion 35 corresponding to the vertical slit 120a.

[0231] The process of disposing the third metal 32 may include a gold plating process and a chemical mechanical polishing (CMP) process for the third metal 32. The third metal 32 may be formed by gold plating on the opening 34 of the third mold 31. The material for gold plating may be the same as the first metal 12 and / or the second metal 22 described above, but is not limited thereto. Next, the third metal 32 may be planarized by chemical mechanical polishing.

[0232] The process of removing the third mold 31 may be performed by forming the third metal 32 and removing the residual PR remaining on the side surface of the third metal 32. Thereby, the third main body layer 30 may be formed. At this time, the third main body layer 30 may include the vertical slit 120a.

[0233] Refer to Figures 15f to 15g and Figures 15k to 15l , the process of separating the first main body layer 10 to the third main body layer 30 may include a sacrificial layer removing process and a base substrate 50 removing process.

[0234] The sacrificial layer removing process may be performed by removing the first sacrificial layer 13 located on the side surface of the first main body layer 10 and the second sacrificial layer 23 located on the side surface of the second main body layer 20 and the horizontal slit 120b.

[0235] The base substrate 50 removing process may be performed by removing the base substrate 50 located under the first main body layer 10. In addition, the sacrificial layer removing process and the base substrate 50 removing process may be performed simultaneously. Thereby, the manufacturing process of the probe pin 100 may be completed.

[0236] Figures 16a to 18l is a schematic diagram illustrating a manufacturing method of a probe pin 100 according to an embodiment of the present invention.

[0237] Refer toFigure 16a and Figure 16b , the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a slit 120. The main body 110 may include a first main body 111 to a third main body 113, and the slit 120 may include a vertical slit 120a and a horizontal slit 120b. The probe pin 100 may further include a contact tip 130 that contacts an object to be inspected by being located at an end region of the third main body 113. Furthermore, the contact tip 130 may be formed of a material different from that of the main body 110, or include a rhodium layer 130a, 22a formed of a material containing rhodium.

[0238] See Figures 16c to 16h , Figures 17c to 17l and Figures 18c to 18l , a method for manufacturing the probe pin 100 according to an embodiment of the present invention may include: a process of preparing a base substrate 50; a process of disposing a first main body layer 10 on the base substrate 50; a process of disposing a second main body layer 20 on the first main body layer 10; a process of disposing a third main body layer 30 on the second main body layer 20; and a process of separating the first main body layer 10 to the third main body layer 30.

[0239] In this embodiment, the process up to the process of disposing the first main body layer 10 is the same as the above-described process, so the description thereof will be omitted.

[0240] See Figures 13f to 13g , Figures 13k to 13l , Figures 16c to 16h , Figures 17c to 17e and Figures 17h to 17j , the process of disposing the second main body layer 20 may include a process of disposing a first sacrificial layer 13, a process of disposing a second-1 mold 21, a process of disposing a connection part 22, a process of removing the second-1 mold 21, a process of disposing a second-2 mold 21, a process of disposing the contact tip 130, and a process of removing the second-2 mold 21.

[0241] The process of disposing the first sacrificial layer 13 may include a gold plating process and a chemical mechanical polishing (CMP) process for the first sacrificial layer 13. The first sacrificial layer 13 may be disposed to form a second mold 21 on the upper part. The first sacrificial layer 13 may be formed by gold plating so as to cover the side surface and the upper part of the first main body layer 10. As Figure 13f shown, the first sacrificial layer 13 may be formed in a manner that a part thereof protrudes. Next, the first sacrificial layer 13 and / or the first main body layer 10 may be planarized by chemical mechanical polishing.

[0242] The process of configuring the second-1 mold 21 can be performed through a PR configuration process, an exposure process, and a development process. Among them, the second-1 mold 21 may include an opening 24 corresponding to the second body layer 20. The opening 24 of the second-1 mold 21 may be an area where the connection part 22 is formed.

[0243] The opening 24 of the second-1 mold 21 may be located on the first body layer 10 in the area of the first body 111. In the above-described case, the opening 24 may be formed in a manner corresponding to the second body layer 20 forming the first body 111 area. Thereby, the connection part 22 constituting the second body layer 20 can be formed on the first body layer 10.

[0244] The process of configuring the connection part 22 may include a connection part gold plating process and a chemical mechanical polishing (CMP) process. The connection part 22 may be formed by gold plating on the opening 24 of the second-1 mold 21. The material for gold plating may be the same as or different from the first metal 12 described above, but it is not limited thereto. Next, the connection part can be planarized by chemical mechanical polishing.

[0245] The process of removing the second-1 mold 21 can be performed by forming the connection part 22 and removing the residual PR remaining on the side of the connection part 22. Thereby, the connection part 22 of the second body layer 20 can be formed.

[0246] The process of configuring the second-2 mold 21 can be performed through a PR layer configuration process, an exposure process, and a development process. Among them, the second-2 mold 21 may include an opening 24 corresponding to the second body layer 20. The opening 24 of the second-2 mold 21 may be an area where the contact tips 130, 22a are formed.

[0247] The opening 24 of the second-2 mold 21 may be located on the first body layer 10 in the area of the third body 113. In the above-described case, the opening 24 may be formed in a manner corresponding to the second body layer 20 forming the third body 113 area. Thereby, the contact tip 130 constituting the second body layer 20 can be formed on the first body layer 10.

[0248] In addition, the opening 24 of the second-2 mold may extend across the third body 113 area and be configured onto the first sacrificial layer 13. In the above-described case, the opening 24 may be formed in a manner corresponding to the contact tip 130. That is, the contact tip 130 may be configured in an area including the boundary of the first body layer 10 and the first sacrificial layer 13. Thereby, the contact tip 130 constituting the second body layer 20 can be formed on the first body layer 10 in a manner that crosses the cross-section of the first body layer 10 and protrudes.

[0249] The process of configuring the contact tip 130 may include a gold plating process for the contact tip 130 and a chemical mechanical polishing (CMP) process. The contact tip 130 may be formed by gold plating on the opening 24 of the second - 2 mold 21. The material for gold plating may be a material different from the first metal 12 as described above. In addition, it may also be a material different from the connecting portion 22. In particular, the material for gold plating may be a material with higher hardness. As an example, it may be rhodium. That is, the contact tip 130 may include a rhodium layer 22a. On the contrary, the material for gold plating may be the same as the first metal 12 and / or the connecting portion 22. That is, the material for gold plating is not particularly limited.

[0250] The process of removing the second - 2 mold 21 can be performed by forming the contact tip 130 and removing the residual PR remaining on the side of the contact tip 130. Thereby, the contact tip 130 of the second body layer 20 can be formed. That is, the second body layer 20 can be completed.

[0251] Refer to Figures 17f to 17g 、 Figures 17k to 17l and Figures 18c to 18l Since the process of configuring the third body layer 30 and the process of separating the first body layer 10 to the third body layer 30 are the same as the processes described above, the related descriptions thereof will be omitted.

[0252] Figures 19a to 20l is a schematic diagram illustrating a method of manufacturing a probe pin 100 according to an embodiment of the present invention.

[0253] Refer to Figure 19a and Figure 19b According to an embodiment of the present invention, the probe pin 100 may include a body 110 and a slit 120. The body 110 may include a first body 111 to a third body 113, and the slit 120 may include a vertical slit 120a and a horizontal slit 120b. The probe pin 100 may further include a contact tip 130 located in the end region of the third body 113. Furthermore, the contact tip 130 may be made of a material different from the body 110. As an example, the contact tip 130 may include rhodium layers 130a, 22a and a protective layer 130b, 22b disposed on the rhodium layers 130a, 22a.

[0254] Refer to Figures 19c to 19l and Figures 20c to 20l, The manufacturing method of the probe pin 100 according to an embodiment of the present invention may include: a process of preparing a substrate substrate 50; a process of disposing a first main layer 10 on the substrate substrate 50; a process of disposing a second main layer 20 on the first main layer 10; a process of disposing a third main layer 30 on the second main layer 20; and a process of separating the first main layer 10 to the third main layer 30.

[0255] In this embodiment, the process up to the position of disposing the first main layer 21 is the same as the above process, so the description related thereto will be omitted.

[0256] Refer to Figures 13f to 13g , Figures 13k to 13l , Figures 19c to 19e and Figures 19h to 19j , the process of disposing the second main layer 20 may include a process of disposing a first sacrificial layer 13, a process of disposing a second mold 21, a process of disposing a second metal 22, a process of disposing a protective layer 22b, and a process of removing the second mold 21.

[0257] The process of disposing the first sacrificial layer 13 may include a gold plating process and a chemical mechanical polishing (CMP) process for the first sacrificial layer 13. The first sacrificial layer 13 may be disposed to form the second mold 21 on the upper part. The first sacrificial layer 13 may be formed by gold plating so as to cover the side and upper part of the first main layer 10. As Figure 13f shown, the first sacrificial layer 13 may be formed in a manner that part of it protrudes. Next, the first sacrificial layer 13 and / or the first main layer 10 may be planarized by chemical mechanical polishing.

[0258] The process of disposing the second mold 21 may be performed through a PR configuration process, an exposure process, and a development process. Among them, the second mold 21 may include at least one opening 24 corresponding to the second main layer 20. The opening 24 of the second mold 21 may be an area for forming the connection parts 22, 22a, 22b and the contact tips 130, 130a, 130b, 22a, 22b.

[0259] The first opening 24a of the second mold 21 may be formed in a manner corresponding to the second main layer 20 in the area where the third main body 113 is formed. Thereby, the connection parts 22, 22a, 22b and / or the contact tips 130, 130a, 130b, 22a, 22b constituting the second main layer 20 may be formed on the first main layer 10.

[0260] In addition, the first opening 24a of the second mold 21 may extend across the area of the third main body 113 and be disposed on the first sacrificial layer 13. In the above situation, the first opening 24a may be formed in a manner corresponding to the contact tip 130.

[0261] The second opening 24b of the second mold 21 can be formed in a manner corresponding to the second body layer 20 that forms the first body 111 region. At this time, since the connecting portions 22, 22a, 22b are formed in the second opening 24b, a probe pin 100 having an annular slit 120 as shown in Figures 6a to 6c can be manufactured.

[0262] The second mold 21 may also include only the first opening 24a. In the case as described above, since the connecting portions 22, 22a, 22b are not formed, a probe pin 100 having an open slit 120 as shown in Figures 7a to 7c can be manufactured.

[0152] The process of disposing the second metal 22 may include a gold plating process for the second metal 22, and may also include a chemical mechanical polishing (CMP) process. The second metal 22 may be formed by gold plating on at least one opening 24 of the second mold 21. The material for gold plating may be constituted by a different type from the first metal 12 as described above, but the type is not limited. Next, a chemical mechanical polishing (CMP) process may be performed, but it may also be omitted depending on the material of the second metal 22. As an example, the second metal 22 may be a rhodium material or a material containing rhodium. That is, the second metal 22 may be constituted by a rhodium layer 130a, 22a.

[0264] The first opening 24a and the second opening 24b are not always filled with the same metal. That is, the conductivity of the second metals 22, 22a formed on the first opening 24a may be greater than the conductivity of the second metals 22, 22a formed on the second opening 24b.

[0265] The process of disposing the protective layer 22b may include a gold plating process for the protective metal and a chemical mechanical polishing (CMP) process. The protective metal may be formed by gold plating on at least one opening 24 of the second mold 21. The material for gold plating may be constituted by a different type from the second metal 22. Preferably, the protective metal may be constituted by a material having a lower hardness than the second metal 22, but it is not limited thereto. Next, the protective layer 22b may be planarized by chemical mechanical polishing.

[0266] The contact tip 130 may include the second metal 22 and the protective layer 22b located on the second metal 22.

[0267] In the case where the second metal 22 includes rhodium or a rhodium layer 22a, there is a high possibility of cracking during the grinding process. Therefore, a protective layer 22b can be disposed on the second metal 22 before the chemical mechanical polishing (CMP) process. That is, after plating the second metal 22 with gold, the protective metal plating can be performed without performing the planarization process.

[0268] Instead of planarizing the second metal 22 including rhodium or the rhodium layer 22a, by disposing the protective layer 22b on the second metal 22 and planarizing the protective layer 22b, the second metal 22 including rhodium or the rhodium layer 22a can be protected. Since rhodium has high strength and high conductivity, when used as the contact tip 130, the current-carrying capacity of the probe pin 100 can be increased. Furthermore, the probe pin 100 including the rhodium layer 22a can be easily manufactured.

[0269] The process of removing the second mold 21 can be performed by forming the second metal 22 and the protective layer 22b and removing the residual PR remaining on the sides of the second metal 22 and the protective layer 22b. Thereby, the second main body layer 20 can be formed. At this time, the second main body layer 20 can include the contact tip 130 and the horizontal slit 120b.

[0270] Refer to Figures 19f to 19g 、 Figures 19k to 19l 、 Figures 20c to 20e And Figures 20h to 20j , the process of disposing the third main body layer 30 can include the process of disposing the second sacrificial layer 23, the process of disposing the third mold 31, the process of disposing the third metal 32, and the process of removing the third mold 31. Since the process of disposing the third main body layer 30 is the same as the above-described content, the related description thereof will be omitted.

[0271] Refer to Figures 20f to 20g And Figures 20k to 20l , the process of separating the first main body layer 10 to the third main body layer 30 can include the sacrificial layer removal process and the substrate removal process. Since the process of separating the first main body layer 10 to the third main body layer 30 is the same as the above-described content, the related description thereof will be omitted.

[0272] Figures 21a to 22l is a schematic diagram illustrating a method of manufacturing a probe pin 100 according to an embodiment of the present invention.

[0273] Refer to Figure 21a And Figure 21b, the probe pin 100 according to an embodiment of the present invention may include a main body 110 and a slit 120. The main body 110 may include a first main body 111 to a third main body 113, and the slit 120 may include a vertical slit 120a and a horizontal slit 120b. The probe pin 100 may further include a contact tip 130 located at an end region of the third main body 113. Furthermore, the contact tip 130 may be made of a material different from that of the main body 110. As an example, the contact tip 130 may include a first protective layer 22b', a rhodium layer 22a disposed on the first protective layer 22b', and a second protective layer 22b'' disposed on the rhodium layer 22a.

[0274] Refer to Figures 21c to 21l and Figures 22c to 22l , a method for manufacturing the probe pin 100 according to an embodiment of the present invention may include: a process of preparing a substrate 50; a process of disposing a first main body layer 10 on the substrate 50; a process of disposing a second main body layer 20 on the first main body layer 10; a process of disposing a third main body layer 30 on the second main body layer 20; and a process of separating the first main body layer 10 to the third main body layer 30.

[0275] In this embodiment, the process up to the process of disposing the first main body layer 10 is the same as the above-described process, so the description related thereto will be omitted.

[0276] Refer to Figures 13f to 13g , Figures 13k to 13l , Figures 21c to 21e and Figures 21h to 21j , the process of disposing the second main body layer 20 may include a process of disposing a first sacrificial layer 13, a process of disposing a second mold 21, a process of disposing a first protective layer 22b', a process of disposing a second metal 22, a process of disposing a second protective layer 22b'', and a process of removing the second mold 21.

[0277] The process of disposing the first sacrificial layer 13 may include a process of plating the first sacrificial layer 13 with gold and a chemical mechanical polishing (CMP) process. The first sacrificial layer 13 may be disposed in order to form the second mold 21 on the upper part. The first sacrificial layer 13 may be formed by plating in a manner that covers the side and upper part of the first main body layer 10. As Figure 13f shown, the first sacrificial layer 13 may be formed in a manner that a part thereof protrudes. Next, the first sacrificial layer 13 and / or the first main body layer 10 may be planarized by chemical mechanical polishing.

[0278] The process of configuring the second mold 21 can be performed through a PR configuration process, an exposure process, and a development process. Among them, the second mold 21 can include at least one opening 24 corresponding to the second main body layer 20. The opening 24 of the second mold 21 can be an area where the connection parts 22a, 22b and the contact tips 22a, 22b are formed.

[0279] The second mold 21 can form a first opening 24a and / or a second opening 24b. This is the same as the content described above, so the related description will be omitted.

[0280] The process of configuring the first protective layer 22b' can include a first protective metal gold plating process and can also include a chemical mechanical polishing (CMP) process. The first protective layer 22b' can be formed by gold plating on at least one opening 24 of the second mold 21. The material for gold plating can be composed of the same or different types as the first metal 12 described above, but its type is not limited. Next, a chemical mechanical polishing (CMP) process can be performed, but it can also be omitted.

[0281] The process of configuring the second metal 22 can include a second metal 22 gold plating process and can also include a chemical mechanical polishing (CMP) process. The second metal 22 can be formed by gold plating on at least one opening 24 of the second mold 21. The material for gold plating can be composed of the same or different types different from the first metal 12, but its type is not limited. Next, a chemical mechanical polishing (CMP) process can be performed, but it can also be omitted according to the material of the second metal 22. The second metal 22 can be composed of a rhodium layer 22a.

[0282] The first opening 24a and the second opening 24b are not always filled with the same metal, and the conductivity of the second metal 22 formed on the first opening 24a can be greater than the conductivity of the second metal 22 formed on the second opening 24b.

[0283] The process of configuring the second protective layer 22b'' can include a second protective metal gold plating process and a chemical mechanical polishing (CMP) process. The second protective metal can be formed by gold plating on at least one opening of the second mold 21. The material for gold plating can be composed of a type different from that of the second metal 22. Preferably, it can be composed of a material with a lower hardness than the second metal 22, but it is not limited thereto. Next, the second protective layer 22b'' can be planarized by chemical mechanical polishing.

[0284] As described above, in the case where the second metal 22 includes rhodium, by not planarizing the second metal 22 but configuring the second protective layer 22b'' on the second metal 22 and planarizing the second protective layer 22b'', the second metal 22 can be protected.

[0285] Since rhodium has relatively high strength and relatively high electrical conductivity, when used as the contact tip 130, the current-carrying capacity of the probe pin 100 can be increased. Furthermore, the probe pin 100 including the rhodium layer 22a can be easily manufactured.

[0286] In addition, the protective layer 22b, the first protective layer 22b', and the second protective layer 22b'' can increase the thickness of the contact tip 130 without increasing the thickness of the rhodium layer 22a. When the thickness of the contact tip 130 increases, the width of the horizontal slit 120b will also become wider, so the flexibility of the main body 110 can be increased. However, rhodium is a relatively expensive material, so it may not be suitable for increasing the thickness without limit. Therefore, the first protective layer 22b' and / or the second protective layer 22b'' can be disposed below and / or above the rhodium layer 22a, so as to widen the width of the horizontal slit 120b while reducing the consumption of rhodium, and further increase the flexibility of the main body 110. In addition, when the first protective layer 22b' and the second protective layer 22'' are respectively disposed above and below the rhodium layer 22a, the rhodium layer 22a can be located at the center of the probe pin 100.

[0287] The process of removing the second mold 21 can be performed by forming the first protective layer 22b', the second metal 22, 22a, and the second protective layer 22b'' and removing the residual PR remaining on the sides of the first protective layer 22b', the second metal 22, 22a, and the second protective layer 22b''. Thereby, the second main body layer 20 can be formed. At this time, the second main body layer 20 can include the contact tip 130 and the horizontal slit 120b.

[0288] See Figures 21f to 21g , Figures 21k to 21l , Figures 22c to 22e and Figures 22h to 22j , the process of configuring the third main body layer 30 can include the process of configuring the second sacrificial layer 23, the process of configuring the third mold 31, the process of configuring the third metal 32, and the process of removing the third mold 31. Since the process of configuring the third main body layer 30 is the same as the above-mentioned content, the description related thereto will be omitted.

[0289] See Figures 22f to 22g and Figures 22k to 22l , the process of separating the first main body layer 10 to the third main body layer 30 can include the sacrificial layer removal process and the substrate removal process. Since the process of separating the first main body layer 10 to the third main body layer 30 is the same as the above-mentioned content, the description related thereto will be omitted.

[0290] Figures 23a to 26l is a schematic diagram illustrating a method of manufacturing a probe pin 100 according to an embodiment of the present invention.

[0291] Refer to Figures 23a to 26l According to an embodiment of the present invention, the probe pin 100 may include a body 110 and a slit 120. The body 110 may include a first body 111 to a third body 113, and the slit 120 may include a vertical slit 120a and a horizontal slit 120b. The probe pin 100 may further include a contact tip 130 located at an end region of the third body 113. Furthermore, the contact tip 130 may be made of a material different from that of the body 110. As an example, the contact tip 130 may include a first rhodium layer, a first protective layer 22b', a second rhodium layer, and a second protective layer 32b. Among them, the longitudinal width (thickness) of the horizontal slit 120b may be smaller than the height (thickness) of the contact tip 130.

[0292] Refer to Figures 23c to 23h , Figures 24c to 24l , Figures 25c to 25h and Figures 26c to 26l According to an embodiment of the present invention, a method for manufacturing the probe pin 100 may include: a process of preparing a base substrate 50; a process of disposing a first body layer 10 on the base substrate 50; a process of disposing a second body layer 20 on the first body layer 10; a process of disposing a third body layer 30 on the second body layer 20; and a process of separating the first body layer 10 to the third body layer 30.

[0293] At this time, the contact tip 130 may include a first contact tip 131 disposed on the second body layer 20 and a second contact tip 132 disposed on the third body layer 30. Among them, the thickness of the first contact tips 131, 131 may be the same as the longitudinal width (thickness) of the horizontal slit 120b, and the thickness of the second contact tip 132 may be smaller than the thickness of the third body layer 30, but is not limited to the above structure. At this time, the first contact tip 131 may include a first protected layer 22a and a first protective layer 22b', and the second contact tip 132 may include a second protected layer 32a and a second protective layer 32b.

[0294] In this embodiment, the process up to the process of disposing the first body layer 10 is the same as the above process, so the description related thereto will be omitted.

[0295] Refer to Figures 13f to 13g , Figures 13k to 13l , Figures 23c to 23h , Figures 24c to 24e and Figures 24h to 24j, the process of configuring the second main body layer 20 may include the process of configuring the first sacrificial layer 13, the process of configuring the second-1 mold 21, the process of configuring the connecting portion 22, the process of removing the second-1 mold 21, the process of configuring the second-2 mold 21, the process of configuring the first contact tip 131, and the process of removing the second-2 mold 21.

[0296] The process of configuring the first sacrificial layer 13 may include the process of gold plating the first sacrificial layer 13 and the chemical mechanical polishing (CMP) process. The first sacrificial layer 13 may be configured to form the second mold 21 on the upper part. The first sacrificial layer 13 may be formed by gold plating so as to cover the side surface and the upper part of the first main body layer 10. As Figure 13f shown, the first sacrificial layer 13 may be formed in a manner that part of it protrudes. Next, the first sacrificial layer 13 and / or the first main body layer 10 may be planarized by chemical mechanical polishing.

[0297] The process of configuring the second-1 mold 21 may be performed through the PR configuration process, the exposure process, and the development process. Among them, the second-1 mold may include an opening 24 corresponding to the second main body layer 20. The opening 24 of the second-1 mold 21 may be the area where the connecting portion is formed.

[0298] The opening 24 of the second-1 mold may be located on the first main body layer 10 in the first main body 111 area. In the above situation, the opening 24 may be formed in a manner corresponding to the second main body layer 20 forming the first main body 111 area. Thereby, the connecting portion 22 constituting the second main body layer 20 may be formed on the first main body layer 10.

[0299] The process of configuring the connecting portion 22 may include the connecting portion gold plating process and the chemical mechanical polishing (CMP) process. The connecting portion 22 may be formed by gold plating on the opening 24 of the second-1 mold 21. The material for gold plating may be the same as the first metal 12 described above, but is not limited thereto. Next, the connecting portion 22 may be planarized by chemical mechanical polishing.

[0300] The process of removing the second-1 mold 21 may be performed by forming the connecting portion and removing the residual PR remaining on the side surface of the connecting portion. Thereby, the connecting portion 22 of the second main body layer 20 may be formed.

[0301] The process of configuring the second-2 mold 21 may be performed through the PR layer configuration process, the exposure process, and the development process. Among them, the second-2 mold 21 may include an opening 24 corresponding to the second main body layer 20. The opening 24 of the second-2 mold 21 may be the area where the first contact tip 131 is formed.

[0302] The opening 24 of the second-2 mold 21 can be located on the first body layer 10 of the third body 113 region. In the above-described case, the opening 24 can be formed in a manner corresponding to the second body layer 20 that forms the third body 113 region. Thereby, the first contact tip 131 that constitutes the second body layer 20 can be formed on the first body layer 10.

[0303] In addition, the opening 24 of the second-2 mold 21 can extend across the third body 113 region and be disposed on the first sacrificial layer 13. In the above-described case, the opening 24 can be formed in a manner corresponding to the contact tip 130. Thereby, the first contact tip 131 that constitutes the second body layer 20 can be formed on the first body layer 10 in a manner that crosses the cross-section of the first body layer 10 and protrudes.

[0304] The process of disposing the first contact tip 13 can include a gold plating process for the first passivation layer 22a, a gold plating process for the first passivation layer 22b', and a chemical mechanical polishing (CMP) process.

[0305] The first passivation layer 22a can be formed by gold plating on the opening 24 of the second-2 mold 21. The material for gold plating can include rhodium, but is not limited thereto.

[0306] The first passivation layer 22b' can be formed by gold plating on the opening 24 of the second-2 mold 21. The material for gold plating can be constituted by a different type from the first passivation layer 22a. Preferably, the first passivation layer 22b' can be constituted by a material having a lower hardness than the first passivation layer 22a, but is not limited thereto. Next, the first passivation layer 22b' can be planarized by chemical mechanical polishing.

[0307] In the case where the first passivation layer 22a includes a rhodium layer 22a, the possibility of cracking during the polishing process is relatively high. Therefore, the first passivation layer 22b' can be disposed on the first passivation layer 22a before the chemical mechanical polishing (CMP) process. That is, the gold plating of the first passivation layer 22b' can be performed without performing a planarization process after the gold plating of the first passivation layer 22a.

[0308] The process of removing the second-2 mold 21 can be performed by forming the connection portion 22 and the first contact tip 131 and removing the residual PR remaining on the sides of the connection portion 22 and the first contact tip 131. Thereby, the second body layer 20 can be formed. At this time, the second body layer 20 can include the first contact tip 131 and the horizontal slit 120b.

[0309] See Figures 24f to 24g 、 Figures 24k to 24l 、 Figures 25c to 25h 、 Figures 26c to 26d and Figures 26h to 26i, the process of configuring the third main layer 30 may include the process of configuring the second sacrificial layer 23, the process of configuring the third-1 mold 31, the process of configuring the second contact tip 132, the process of removing the third-1 mold 31, the process of configuring the third-2 mold 31, the gold plating process of the third metal 32, and the process of removing the third-2 mold 31.

[0310] Since the process of configuring the second sacrificial layer 23 is the same as that described above, the description related thereto will be omitted.

[0311] The process of configuring the third-1 mold 31 can be performed through the PR layer configuration process, the exposure process, and the development process. Among them, the third-1 mold 31 may include an opening 34 corresponding to the second contact tip 132. The opening 34 of the third-1 mold 31 may be configured to be located above the first contact tip 131 of the second main layer 20. Thus, the second contact tip 132 can be formed in such a way that no step difference is caused on the first contact tip 131.

[0312] The process of configuring the second contact tip 13 may include the gold plating process of the second protected layer 32a, the gold plating process of the second protective layer 32b, and the chemical mechanical polishing (CMP) process.

[0313] The second protected layer 32a can be formed by gold plating on the opening 34 of the third-2 mold 31. The material for gold plating may include rhodium, but is not limited thereto.

[0314] The second protective layer 32b can be formed by gold plating on the opening 34 of the third-1 mold 31. The material for gold plating can be constituted by a different type from that of the second protected layer 32a. Preferably, the second protective layer 32b can be constituted by a material with a lower hardness than that of the second protected layer 32a, but is not limited thereto. Next, the second protective layer 32b can be planarized by chemical mechanical polishing.

[0315] When the second protected layer 32a includes a rhodium layer 32a, there is a greater possibility of cracking during the polishing process. Therefore, the second protective layer 32b can be configured on the second protected layer 32a before the chemical mechanical polishing (CMP) process. That is, the gold plating of the second protective layer 32b can be performed without performing the planarization process after the gold plating of the second protected layer 32a.

[0316] The process of removing the third-1 mold 31 can be performed by forming the second contact tip 132 and removing the residual PR remaining on the side of the second contact tip 132. Thus, the third main layer 30 can partially include the second contact tip 132. In addition, the first contact tip 131 and the second contact tip 132 can be integrated to form a contact tip 130.

[0317] The process of configuring the third - 2 mold 31 can be performed through a PR layer configuration process, an exposure process, and a development process. Among them, the third - 2 mold 31 can include an opening 34 corresponding to the third main layer 30. The opening 34 of the third - 2 mold 31 can be configured to be located above a part of the connection portion 22, the horizontal slit 120b, and the second contact tip 132 of the second main layer 20. Thereby, the third main layer 30 can be formed above a part of the connection portion 22, the horizontal slit 120b, and the second contact tip 132.

[0318] The process of configuring the third metal 32 can include a third metal 32 gold plating process and a chemical mechanical polishing (CMP) process. The third metal 32 can be formed by gold plating on the opening 34 of the third - 2 mold 31. The material for gold plating can be the same or different from the first metal 12 and / or the second metal 22 as described above, but it is not limited thereto. Next, the third metal 32 can be planarized through chemical mechanical polishing.

[0319] The process of removing the third - 2 mold can be performed by forming the second contact tip 132 and the third metal 32 and removing the residual PR remaining on the sides of the second contact tip 132 and the third metal 32. Thereby, the third main layer 30 can be formed. At this time, the third main layer 30 can include a vertical slit 120a.

[0320] Refer to Figures 26f to 26g and Figures 26k to 26l , the process of separating the first main layer 10 to the third main layer 30 can include a sacrificial layer removal process and a substrate 50 removal process. Since the process of separating the first main layer 10 to the third main layer 30 is the same as the content described above, the related description thereof will be omitted.

[0321] In the above - described embodiment, the probe pin 100 can include a horizontal slit 120b in the second main layer 20, and can include a vertical slit 120a formed across the first main layer 10, the second main layer 20, and the third main layer 30.

[0322] Figure 27a and Figure 27b is a schematic diagram illustrating the probe pin 100 according to an embodiment of the present invention.

[0323] Refer to Figure 27a, the probe pin 100 according to an embodiment of the present invention may include a body, a vertical slit 120a, a horizontal slit 120b, and a contact tip 130. On the other hand, the probe pin 100 may include a first body layer 61 at the lower part, a second body layer 62 disposed on the first body layer 61, a third body layer 63 disposed on the second body layer 62, a fourth body layer 64 disposed on the third body layer 63, and a fifth body layer 65 disposed on the fourth body layer 64. At this time, the third body layer 30 may include a third-1 body layer 63a forming the lower part and a third-2 body layer 63b forming the upper part. Herein, the lower part refers to the left side with Figure 27a as a reference, and the upper part refers to the right side with Figure 27a as a reference.

[0324] The first body layer 61 and the fifth body layer 65 may be formed of the same material, but it is not limited thereto. The second body layer 62 and the fourth body layer 64 may be formed of the same material, but it is not limited thereto. At this time, the first body layer 61 and the second body layer 62 may be formed of different materials from each other, but it is not limited thereto. In addition, the body 110 is not necessarily composed of the first body layer 61 to the fifth body layer 65, and may also be composed of more or fewer layers. The third-1 body layer 63a may be formed of a material different from that of the third-3 body layer 63b, but it is not limited thereto. In addition, the first body layer 61 and the fifth body layer 65 may be formed with a thickness relatively thicker than that of other layers.

[0325] The second body layer 62 may be configured to form a first contact tip by extending across the first body layer 61, the third body layer 63 may be configured to form a second contact tip by extending across the first body layer 61, and the fourth body layer 64 may be configured to form a third contact tip by extending across the first body layer 61. In addition, the second body layer 62, the third body layer 63, and the fourth body layer 64 may be formed with the same length, and the first contact tip, the second contact tip, and the third contact tip may form an integrally formed contact tip 130.

[0326] The third body layer 63 may include a horizontal slit 120b. The third body layer 63 may include connection portions 22, 63a, 63b in the first body 111 region, may include a horizontal slit 120b in the second body 112 region, and may include a contact tip 130 in the third body 113 region.

[0327] The second contact tip may include a second-1 contact tip forming the lower part and a second-2 contact tip forming the upper part. The second-1 contact tip may be formed of a rhodium layer 63a, while the second-2 contact tip may be formed of a metal layer 63b having a lower hardness than rhodium. With the structure described above, the contact tip 130 including the rhodium layer 63a can be easily manufactured by grinding the second-2 contact tip on the basis of the manufacturing method of the probe pin 100.

[0328] In addition, the contact tip 130 is formed of a part of a third main layer 63 including a rhodium layer and a horizontal slit 120b, a second main layer 62, and a fourth main layer 64, so that the thickness of the contact tip 130 can be increased. That is, the thickness of the contact tip 130 can be increased while reducing the width of the horizontal slit 120b. Thereby, the force applied to the semiconductor element by the contact tip 130 in the overdrive state can be dispersed, thereby preventing damage to the semiconductor element and enhancing the strength of the contact tip 130.

[0329] Refer to Figure 27b , the probe pin 100 according to an embodiment of the present invention may include a first main layer 710 at the lower part, a second main layer 72 disposed on the first main layer 71, a third main layer 73 disposed on the second main layer 72, a fourth main layer 74 disposed on the third main layer 73, and a fifth main layer 75 disposed on the fourth main layer 74. At this time, the second contact tip 72 may include a first connection part 72a and a first horizontal slit 120b, and the fourth main layer 74 may include a second connection part 74a and a second horizontal slit 120b. Among them, the lower part refers to the left side part based on Figure 27b as a reference, and the upper part refers to the right side part based on Figure 27b as a reference.

[0330] The first main layer 71, the third main layer 73, and the fifth main layer 75 may be formed of the same material, but it is not limited thereto. The second main layer 72 and the fourth main layer 74 may be formed of the same material, but it is not limited thereto. In addition, as described above, the main body 110 is not necessarily composed of the first main layer 71 to the fifth main layer 75.

[0331] Among them, the first main layer 71 and the fifth main layer 75 may be formed with a thickness thinner than that of the third main layer 73.

[0332] The third main body layer 73 can form the contact tip 130 in a manner that straddles and extends beyond the second main body layer 72. Among them, the third main body layer 73 can include a first contact tip in the lower part of the third main body 113 region and a second contact tip in the upper part of the third main body 113 region. The first contact tip can be a rhodium layer, and the second contact tip can be formed of a metal layer with a lower hardness compared to the first contact tip or the old one.

[0333] The horizontal slit 120b and the contact tip 130 can be located at different heights or in different layers from each other, so that a repeated region may not be formed.

[0334] Forming a second contact tip with a lower hardness than the first contact tip on the first contact tip can achieve the same effect as the above-mentioned content. Since it is impossible to maintain the high strength of the probe pin 100 when the width of the horizontal slit 120b is too large, the above-mentioned structure can prevent the width of the horizontal slit 120b from becoming too large while ensuring the thickness of the contact tip 130.

[0335] Figures 28a to 30l It is a schematic diagram illustrating a manufacturing method of the probe pin 100 according to an embodiment of the present invention.

[0336] Refer to Figure 28a and Figure 28b According to an embodiment of the present invention, the probe pin 100 can include a main body 110 and a slit 120. The main body 110 can include a first main body 111 to a third main body 113, and the slit 120 can include a vertical slit 120a and a horizontal slit 120b. The probe pin 100 can further include a contact tip 130 located at the end region of the third main body 113. Furthermore, the contact tip 130 can be formed of a material different from that of the main body 110. On the other hand, the probe pin 100 can include a first main body layer 10, a second main body layer 20, and a third main body layer 30. The second main body layer 20 can include the horizontal slit 120b. At this time, the contact tip 130 can be disposed in the first main body layer 10. That is, the contact tip 130 can be maintained at a position closer to the lower surface or the upper surface rather than the middle height of the main body 110.

[0337] Refer to Figures 28c to 28l , Figures 29c to 29l and Figures 30c to 30l, The manufacturing method of the probe pin 100 according to an embodiment of the present invention may include: a process of preparing a base substrate 50 having a raised portion 50a disposed on an upper surface; a process of disposing a contact tip 130 on the raised portion 50a; a process of disposing a main body 110 on at least a part of the contact tip 130 and the base substrate 50; and a process of separating the main body 110. Among them, the process of disposing the main body 110 may include a process of disposing a first main body layer 10 on at least a part of the contact tip 130 and the base substrate 50, a process of disposing a second main body layer 20 on the first main body layer 10, and a process of disposing a third main body layer 30 on the second main body layer 20.

[0338] First, a process of preparing a base substrate 50 having a raised portion 50a disposed on an upper surface may be performed, and a process of disposing a contact tip 130 on the raised portion 50a may be performed.

[0339] In the process of preparing the base substrate 50 equipped with the raised portion 50a, the base substrate 50 may include the raised portion 50a. The base substrate 50 may be integrally formed with the raised portion 50a. In the base substrate 50, the raised portion 50a and the region other than the raised portion 50a may be formed of the same or different materials. The raised portion 50a may be formed in such a manner that the cross-sectional area gradually narrows upward, but is not limited thereto.

[0340] In the process of disposing the contact tip 130 on the raised portion 50a, the contact tip 130 may be disposed on the raised portion 50a. The contact tip 130 may be separately manufactured and disposed on the raised portion 50a, or may be disposed on the raised portion 50a by electroplating. At this time, in order to perform electroplating, a mold (not shown) may be first disposed except for a part of the upper surface of the raised portion 50a.

[0341] The contact tip 130 may be first formed by disposing the raised portion 50a on the base substrate 50. By disposing a first mold 11 and a first metal 12 on the first formed contact tip 130, it is not necessary to directly grind the contact tip 130, but a process of grinding the first metal 12 may be performed. In particular, when the contact tip 130 is formed of a material with a high hardness, it may be difficult to grind and is prone to cracking, so there is an advantage that the grinding process of the contact tip 130 can be omitted. Specifically, the contact tip 130 may include rhodium, and at this time, the grinding process of rhodium may be omitted.

[0342] Refer to Figures 28c to 28e and Figures 28h to 28j , the process of disposing the first main body layer 10 may include a process of disposing the first mold 11, a process of disposing the first metal 12, and a process of removing the first mold 11.

[0343] The process of configuring the first mold 11 can be performed through a PR layer configuration process, an exposure process, and a development process. Among them, the first mold 11 can include an opening 14 corresponding to the first main body layer 10. The first mold 11 can be configured on a part of the raised portion 50a and a part of the contact tip 130. Thereby, the opening 14 of the first mold 11 can be configured on the remaining part of the raised portion 50a and the remaining part of the contact tip 130. The first mold 11 can be the area where the first main body layer 10 is formed.

[0344] The process of configuring the first metal 12 can include a gold plating process for the first metal 12 and can also include a chemical mechanical polishing (CMP) process. The first metal 12 can be formed by gold plating on the opening 14 of the first mold 11. Next, the first metal 12 can be planarized through chemical mechanical polishing.

[0345] The process of removing the first mold 11 can be performed by forming the raised portion 50a, the contact tip 130, and the first main body layer 10 and removing the residual PR remaining on the sides of the first main body layer 10, the contact tip 130, and the raised portion 50a. Thereby, the first main body layer 10 can be formed.

[0346] Refer to Figures 28f to 28g , Figures 28k to 28l , Figures 29c to 29e and Figures 29h to 29j , the process of configuring the second main body layer 20 can include the process of configuring the first sacrificial layer 13, the process of configuring the second mold 21, the process of configuring the second metal 22, and the process of removing the second mold 21.

[0347] The process of configuring the first sacrificial layer 13 can include a gold plating process for the first sacrificial layer 13 and a chemical mechanical polishing (CMP) process. The first sacrificial layer 13 can be configured to form the second mold 21 on the upper part. The first sacrificial layer 13 can be formed by gold plating in a manner that covers the sides and the upper part of the first main body layer 10, the contact tip 130, and the raised portion 50a. As Figure 28f shown, the first sacrificial layer 13 can be formed in a manner that part of it protrudes. Next, the first sacrificial layer 13 and / or the first main body layer 10 can be planarized through chemical mechanical polishing.

[0348] The process of configuring the second mold 21, the process of configuring the second metal 22, and the process of removing the second mold 21 are the same as the above-described content, so the related descriptions thereof will be omitted.

[0349] Refer to Figures 29f to 29g , Figures 29k to 29l , Figures 30c to 30e and Figures 30h to 30jThe process of configuring the third body layer 30 may include the process of configuring the second sacrificial layer 23, the process of configuring the third mold 31, the process of configuring the third metal 32, and the process of removing the third mold 31.

[0350] The process of configuring the second sacrificial layer 23 may include the process of plating the second sacrificial layer 23 with gold and the chemical mechanical polishing (CMP) process. The second sacrificial layer 23 may be configured to form the third mold 31 on the upper part. The second sacrificial layer 23 may be formed by plating in a manner that covers the side and upper parts of the second body layer 20. As Figure 29f shown, the second sacrificial layer 23 may be formed in a manner that a part thereof protrudes. Next, the second sacrificial layer 23 and / or the second body layer 20 may be planarized by chemical mechanical polishing. However, the process of removing the first sacrificial layer 13 may also be performed before the process of configuring the second sacrificial layer 23.

[0351] The process of configuring the third mold 31, the process of configuring the third metal 32, and the process of removing the third mold 31 are the same as those described above, and thus the related descriptions thereof will be omitted.

[0352] In addition, according to the method for manufacturing a probe pin of the embodiment described above, it may further include: a process of coating the premise surface of the separated probe pin 100 with a metal substance; and a process of coating a part of the surface of the probe pin 100 with an insulating substance.

[0353] Next, the insulating layer 118 and the ground pin GP disposed on the spaced-apart body will be described.

[0354] Figures 31a to 31d is a schematic diagram illustrating the insulating layer 118 of the spaced-apart body according to an embodiment of the present invention.

[0355] Referring to Figure 31a , the body 110 may include a first spaced-apart body 110a to a fourth spaced-apart body 110d. The first spaced-apart body 110a to the fourth spaced-apart body 110d may each include two outer side surfaces forming the outside of the body 110, and may include two inner side surfaces forming the inside of the body 110.

[0356] The second spaced-apart body 110b may dispose the insulating layer 118 on at least one inner side surface. That is, the second spaced-apart body 110b may dispose the insulating layer 118 on one or two inner side surfaces. However, it is not limited to the insulating layer 118 being disposed on the second spaced-apart body 110b. Different from Figure 31a , the insulating layer 118 may be disposed on at least one of the first spaced-apart body 110a to the fourth spaced-apart body 110d.

[0357] Referring to Figure 31b, the first spaced-apart body 110a and the second spaced-apart body 110b may each have an insulating layer 118 disposed on an inner side surface. Specifically, an insulating layer 118 may be disposed on the inner side surface of the first spaced-apart body 110a facing the third spaced-apart body 110c, and an insulating layer 118 may be disposed on the inner side surface of the second spaced-apart body 110b facing the fourth spaced-apart body 110d. Different from Figure 31b , the insulating layer 118 may be disposed on at least one of the first spaced-apart body 110a to the fourth spaced-apart body 110d. In addition, different from Figure 31b , the insulating layers 118 may also be integrally formed.

[0358] Refer to Figure 31c , the first spaced-apart body 110a may have insulating layers 118 disposed on the inner side surface facing the third spaced-apart body 110c and on two outer side surfaces, and the second spaced-apart body 110b may have insulating layers 118 disposed on the inner side surface facing the fourth spaced-apart body 110d and on two outer side surfaces, and the insulating layers 118 may be connected to each other and integrally formed. Different from Figure 31c , the insulating layer 118 may be disposed on at least two of the first spaced-apart body 110a to the fourth spaced-apart body 110d.

[0359] Refer to Figure 31d , the second spaced-apart body 110b may have insulating layers 118 disposed on two inner side surfaces and two outer side surfaces. Different from Figure 31d , at least one of the first spaced-apart body 110a to the fourth spaced-apart body 110d may have insulating layers 118 disposed on all surfaces.

[0360] Among the first spaced-apart body 110a to the fourth spaced-apart body 110d, the spaced-apart body on which the insulating layer 118 is disposed may be used as a ground pin GP. Compared with the case where the body 110 is formed integrally to constitute the probe pin 100, by using a plurality of spaced-apart bodies to space the body 110 to constitute the probe pin 100, the skin effect can be reduced and thereby the current-carrying capacity can be increased. In addition, by using a part of the plurality of spaced-apart bodies as the ground pin GP, even for high-frequency signals, the skin effect can be reduced and thereby the current-carrying capacity can be increased.

[0361] Figure 32a And Figure 32b are schematic diagrams showing the front and side views of the probe pin 100 configured with the insulating layer 118 according to an embodiment of the present invention. Figure 32c is a schematic diagram showing the end portion 111 of the first body according to an embodiment of the present invention. Figure 32d is a schematic diagram showing the connection state between the contact tip 130 and the ground wiring 230 according to an embodiment of the present invention.

[0362] Refer to Figures 32a to 32c According to an embodiment of the present invention, the ground pin GP may include a first spaced body 110a and a second spaced body 110b. The first spaced body 110a may be provided with an insulating layer 118 on the inner side facing the third spaced body 110c, and the second spaced body 110b may be provided with an insulating layer 118 on the inner side facing the fourth spaced body 110d, and the insulating layer 118 may be integrally configured.

[0363] For an embodiment in which the slit 120 is not provided in the third body 113, since the third body 113 is not provided with a spaced body, the insulating layer 118 may be formed on the inner sides of the first spaced body 110a and the second spaced body 110b and extend to the end face of the third body 113. That is, the third body 113 may be provided with the insulating layer 188 in the middle. This can be adopted for the spaced body provided with the insulating layer 188 described later. Thereby, the first spaced body 110a and the second spaced body 110b can be used as the ground pin GP. Thereby, the first spaced body 110a and the second spaced body 110b can be electrically insulated from the third spaced body 110c and the fourth spaced body 110d.

[0364] Refer to Figure 32d According to an embodiment of the present invention, the probe card 200 may include an upper plate 210 provided with an upper hole 211, a lower plate 220 provided with a lower hole 221, and probe pins 100. At this time, the probe pins 100 may include a body 110, a vertical slit 120a, and a horizontal slit 120b, and may include a first spaced body 110a to a fourth spaced body 110d divided by the vertical slit 120a and the horizontal slit 120b. At this time, the insulating layer 118 is provided in the first spaced body 110a and the second spaced body 110b, so that it can be used as the ground pin GP.

[0365] The upper plate 210 may be provided with a ground wiring 230 on the upper or lower side. At this time, the first spaced body 110a and the second spaced body 110b may be bent and connected to the ground wiring 230.

[0366] The probe card 200 of this embodiment includes probe pins 100 spaced by a plurality of spaced bodies. By connecting the spaced body including the insulating layer 118 to the ground wiring 230, the cross-sectional area of the body 110 can be reduced, thereby reducing the skin effect, and even for high-frequency signals, the current-carrying capacity can be increased.

[0367] Figure 33a And Figure 33b are schematic diagrams showing the front and side views of the probe pin 100 provided with the insulating layer 118 according to an embodiment of the present invention.Figure 33c It is a schematic diagram illustrating the end portion 111 of the first body according to an embodiment of the present invention. Figure 33d It is a schematic diagram illustrating the connection state of the contact tip 130 and the ground wiring 230 according to an embodiment of the present invention.

[0368] Refer to Figures 33a to 33c , the ground pin GP according to an embodiment of the present invention may include a first spaced-apart body 110a and a fourth spaced-apart body 110d. The second spaced-apart body 110b may be provided with insulating layers 118 on two inner side surfaces facing the first spaced-apart body 110a and the fourth spaced-apart body 110d, and the insulating layers 118 may be integrally provided.

[0369] The insulating layer 118 may be formed on the inner side surface of the second spaced-apart body 110b and extend to the end face of the third body 113. Thereby, the second spaced-apart body 110b can be used as the ground pin GP.

[0370] Refer to Figure 33d , the probe card 200 according to an embodiment of the present invention may include an upper plate 210 provided with an upper hole 211, a lower plate 220 provided with a lower hole 221, and probe pins 100. At this time, the probe pins 100 may include a body 110, a vertical slit 120a, and a horizontal slit 120b, and may include first to fourth spaced-apart bodies 110a to 110d divided by the vertical slit 120a and the horizontal slit 120b. At this time, an insulating layer 118 is provided in the second spaced-apart body 110b, so that it can be used as the ground pin GP. Furthermore, an insulating layer 118 is provided in one of the first to fourth spaced-apart bodies 110a to 110d, so that it can be used as the ground pin GP.

[0371] The upper plate 210 may be provided with the ground wiring 230 on the upper or lower side. At this time, the first spaced-apart body 110a and the second spaced-apart body 110b may be bent and connected to the ground wiring 230.

[0372] The probe card 200 of the present embodiment includes probe pins 100 spaced apart by a plurality of spaced-apart bodies. By connecting the spaced-apart body including the insulating layer 118 to the ground wiring 230, the cross-sectional area of the body 110 can be reduced, thereby reducing the skin effect, and even for high-frequency signals, the current-carrying capacity can be increased.

[0373] Figure 34a And Figure 34b It is a schematic diagram illustrating the front and side views of the probe pin 100 provided with the insulating layer 118 according to an embodiment of the present invention. Figure 34cIt is a schematic diagram showing the end of the first main body 111 and the ground wiring 230 according to an embodiment of the present invention. Figure 34d It is a schematic diagram showing the positional state of the ground pin GP and the ground wiring 230 according to an embodiment of the present invention.

[0374] In this embodiment, the probe pin 100 is as Figures 33a to 33d shown. Further, in this embodiment, the probe card 200 includes an upper board 210 in which the ground wiring 230 is disposed on the upper portion. Alternatively, the ground wiring 230 may be disposed on the lower portion of the upper board 210.

[0375] The ground wiring 230 may be extended and disposed to the upper hole 211 of the upper board 210. At this time, the ground wiring 230 may be formed along the two outer sides of the second entire main body 110b. In addition, the ground wiring 230 may be extended and disposed to the inner side of the upper hole 211 of the upper board 210. At this time, the ground wiring 230 may be formed along the two outer sides of the second entire main body 110b. The probe pin 100 may be connected to the ground wiring 230 in an over-drive state.

[0376] In addition, the spaced main body provided with the insulating layer 118 may have a shorter length compared to other spaced main bodies. That is, the ground pin GP may be formed with a length shorter than that of other pins.

[0377] With the above-described configuration, even when the second spaced main body 110b used as the ground pin GP is not bent, the second spaced main body 110b may be connected to the ground wiring 230 by elastic deformation in an over-drive state.

[0378] Figure 35 It is a schematic diagram showing the probe pin 100 provided with the protrusion 119 according to an embodiment of the present invention.

[0379] Refer to Figure 35 In this embodiment, the probe pin 100 is as Figures 33a to 33d shown. Further, in this embodiment, the probe card 200 includes an upper board 210 in which the ground wiring 230 is disposed on the lower portion. At this time, the protrusion 119 is disposed in the second spaced main body 110b so as to be connected to the ground wiring 230. With the above-described configuration, even when the second spaced main body 110b used as the ground pin GP is not bent, the second spaced main body 110b may be connected to the ground wiring 230 by elastic deformation in a normal or over-drive state.

[0380] In the above content, the preferred embodiments of the present invention have been described. However, those of ordinary skill in the relevant technical field can make various modifications or variations to the present invention without departing from the spirit and scope of the present invention as recited in the appended claims.

Claims

1. A probe pin, comprising: a main body formed by extending along one side direction; and a slit formed by penetrating a part of the main body; the main body comprising: a first main body constituting one side of the main body; a second main body extending from the first main body and constituting the middle part of the main body; and a third main body extending from the second main body and constituting the other side of the main body; the slit comprising: a vertical slit formed by penetrating the horizontal plane of the main body and extending along the vertical direction; and a horizontal slit formed by penetrating the vertical plane of the main body and extending along the horizontal direction.

2. The probe pin according to claim 1, wherein at least one of the vertical slit and the horizontal slit is formed on the second main body.

3. The probe pin according to claim 1, wherein at least one of the vertical slit and the horizontal slit extends from the second main body to the end of the first main body, so that one side of the first main body is open.

4. The probe pin according to claim 1, wherein the vertical slit and the horizontal slit cross each other.

5. The probe pin according to claim 1, wherein the main body includes a first separated main body, a second separated main body, a third separated main body, and a fourth separated main body separated from each other by the vertical slit and the horizontal slit, wherein at least one of the first separated main body to the fourth separated main body includes an over-separated part bent in a direction in which the separation distance from at least one of the remaining at least one increases, and the separation of the main body is prevented by bringing the over-separated part into contact with the upper plate into which the main body is inserted.

6. The probe pin according to claim 1, wherein the main body includes a first separated main body, a second separated main body, a third separated main body, and a fourth separated main body separated from each other by the vertical slit and the horizontal slit, and further comprises: a connection band part connecting the inner surface of the first separated main body and the inner surface of at least one of the second separated main body to the fourth separated main body; and a recess formed by recessing at least one of the outer surface facing the inner surface of the first separated main body to which the connection band part is connected and the outer surface facing the at least one inner surface.

7. The probe pin according to claim 1, wherein at least one of the vertical slit and the horizontal slit is provided in plurality.

8. The probe pin according to claim 1, wherein the vertical slit and the horizontal slit have different widths or lengths from each other.

9. The probe pin according to claim 1, further comprising: a contact tip contacting an object to be inspected by being located at the end region of the third main body.

10. The probe pin according to claim 9, wherein the contact tip is made of a material different from that of the main body.

11. The probe pin according to claim 9, wherein the contact tip includes a rhodium layer made of a material containing rhodium.

12. The probe pin according to claim 11, the contact tip, further comprising: a protective layer located on the upper part of the rhodium layer and made of a material having a hardness lower than that of the rhodium.

13. The probe pin according to claim 9, The thickness of the contact tip is greater than the thickness of the horizontal slit.

14. The probe pin according to claim 9, The horizontal slit and the contact tip are located at different heights from each other without forming an overlapping region.

15. The probe pin according to claim 1, The main body includes a first separated main body, a second separated main body, a third separated main body, and a fourth separated main body separated from each other by means of the vertical slit and the horizontal slit, and further includes: At least one of the first separated main body and the fourth separated main body further includes an insulating layer formed in an insulating manner with respect to the remainder other than the at least one; The insulating layer is formed on the inner side surface of the at least one facing the remainder and extends to the first main body to the third main body.

16. The probe pin according to claim 15, At least one of the first separated main body to the fourth separated main body is bent or provided with a protrusion in order to be connected to a ground wiring as a ground pin.

17. A probe pin, includes: A main body formed to extend in one side direction; A vertical slit penetrating the horizontal plane of the main body and formed in the vertical direction; A horizontal slit penetrating the vertical plane of the main body and formed in the horizontal direction; and A contact tip formed on one side of the main body.

18. The probe pin according to claim 17, The contact tip is formed at a height closer to the lower surface than the upper surface of the main body.

19. A probe card, includes: Probe pins, configured with a main body, a vertical slit penetrating the horizontal plane of the main body and formed in the vertical direction, and a horizontal slit penetrating the vertical plane of the main body and formed in the horizontal direction; An upper plate configured with upper holes through which the probe pins can penetrate; and A lower plate configured with lower holes through which the probe pins can pass through; The main body includes: a first main body located at the upper hole; a third main body located at the lower hole; and a second main body formed between the first main body and the third main body.

20. The probe card according to claim 19, The main body includes a first separated main body, a second separated main body, a third separated main body, and a fourth separated main body separated from each other by means of the vertical slit and the horizontal slit, and further includes: At least one of the first separated main body to the fourth separated main body includes an over-separated portion bent in a direction in which the separation distance from the remainder other than the at least one increases, By bringing the over-separated portion into contact with the upper plate into which the main body is inserted, the detachment of the main body is prevented.

21. The probe card according to claim 19, The main body includes a first separated main body, a second separated main body, a third separated main body, and a fourth separated main body separated from each other by means of the vertical slit and the horizontal slit, and further includes: At least one of the first separated main body to the fourth separated main body further includes an insulating layer formed in an insulating manner with respect to the remainder other than the at least one; The insulating layer is formed on and extends from the remaining at least one inner side surface to the first body to the third body. The upper plate includes a ground wiring on its upper surface or lower surface. At least one of them is connected to the ground wiring.

22. A method for manufacturing a probe pin, comprising: a process of preparing a base substrate; a process of disposing a first body layer on the base substrate; a process of disposing a second body layer including a connection portion and a horizontal slit on the first body layer; and a process of disposing a third body layer on the second body layer.

23. The method for manufacturing a probe pin according to claim 22, wherein the second body layer further includes a contact tip.

24. The method for manufacturing a probe pin according to claim 23, before the process of disposing the second body layer, further comprising: a process of disposing a first sacrificial layer around the first body layer; the process of disposing the second body layer includes: a process of disposing the connection portion on a part of the first body layer; and a process of disposing the contact tip on an area including the boundary between the first body layer and the first sacrificial layer; the contact tip is made of a material different from that of the first body layer and the second body layer.

25. The method for manufacturing a probe pin according to claim 24, the process of disposing the contact tip, comprising: a process of disposing a second metal; and a process of disposing a protective layer on the second metal; the protective layer is made of a material having a lower hardness than the second metal.

26. The method for manufacturing a probe pin according to claim 22, the first body layer, the second body layer, and the third body layer include vertical slits.

27. A method for manufacturing a probe pin, comprising: a process of preparing a base substrate having a raised portion on its upper surface; a process of disposing a contact tip on the upper surface of the raised portion; and a process of disposing a body on at least a part of the contact tip and the base substrate.

28. The method for manufacturing a probe pin according to claim 27, the process of disposing the body, comprising: a process of disposing a first body layer on at least a part of the contact tip and the base substrate; a process of disposing a second body layer including a connection portion and a horizontal slit on the first body layer; and a process of disposing a third body layer on the second body layer.

29. A method for manufacturing a probe card, comprising: a process of overlapping the upper holes of the upper plate and the lower holes of the lower plate by adjacent positioning of the upper plate and the lower plate; a process of passing the probe pins through the upper holes and the lower holes; and a process of contacting the spaced portion of the probe pins with the upper holes by raising the upper plate.

30. A method for manufacturing a probe card, comprising: a process of overlapping the upper holes of the upper plate and the lower holes of the lower plate by adjacent positioning of the upper plate and the lower plate; a process of passing the probe pins through the upper holes and the lower holes; and A process of connecting a partitioned body including a ground layer among a first to a fourth partitioned body separated by a vertical slit and a horizontal slit to a ground wiring.