Photoelectric device, preparation method of photoelectric device and electronic equipment

Abstract

The invention discloses a photoelectric device, a preparation method of the photoelectric device and electronic equipment, the photoelectric device comprises an anode and a cathode which are oppositely arranged, and a functional layer arranged between the anode and the cathode, the functional layer comprises an electronic functional layer and an auxiliary layer arranged on one side, far away from the electronic functional layer, of the cathode, the electronic functional layer comprises a metal oxide material, and the auxiliary layer is made of acidic resin, so that the photoelectric property and the service life of the photoelectric device are improved; the preparation method of the photoelectric device has the advantages that the preparation process is simple, process conditions are easy to control, and large-scale industrial production requirements are met, the photoelectric device or the photoelectric device prepared by the preparation method of the photoelectric device is applied to electronic equipment, the photoelectric performance of the electronic equipment is improved, and the service life of the electronic equipment is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technologies, and particularly relates to an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device. Background Art

[0002] Optoelectronic devices refer to a class of devices made using the optoelectronic effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking a light-emitting device as an example, the light-emitting device includes but is not limited to an organic light-emitting diode 10 (Organic Light-Emitting Diode, OLED) and a quantum dot light-emitting diode (Quantum Dot Light-Emitting Diodes, QLED). The OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer. Among them, the anode and the cathode are oppositely arranged, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of the OLED / QLED is as follows: electrons are injected from the cathode of the device into the light-emitting region, holes are injected from the anode of the device into the light-emitting region, electrons and holes recombine in the light-emitting region to form excitons, and the recombined excitons release photons in the form of radiative transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and also shown great potential for application development. However, there are still deficiencies at present. For example, the device lifetime of optoelectronic devices needs to be further improved. Summary of the Invention

[0004] The present application provides an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device to improve the device lifetime of the optoelectronic device.

[0005] In a first aspect, the present application provides an optoelectronic device, including:

[0006] An anode and a cathode that are oppositely arranged; a functional layer arranged between the anode and the cathode, the functional layer includes an electron functional layer, and the electron functional layer includes a metal oxide material;

[0007] An auxiliary layer arranged on a side of the cathode away from the electron functional layer;

[0008] Wherein, the material of the auxiliary layer includes an acidic resin.

[0009] In a second aspect, the present application provides a preparation method of an optoelectronic device, including the following steps:

[0010] Providing a prefabricated device including a bottom electrode, and forming a functional layer on one side of the bottom electrode, the functional layer includes an electron functional layer, and the electron functional layer includes a metal oxide material; and

[0011] A top electrode is formed on the side of the functional layer away from the bottom electrode;

[0012] Wherein, when the optoelectronic device is a normal structure, the bottom electrode is the anode and the top electrode is the cathode. After the step of forming the top electrode, the method for manufacturing the optoelectronic device further includes the step of forming an auxiliary layer on the side of the top electrode away from the electron functional layer;

[0013] Alternatively, when the optoelectronic device is an inverted structure, the bottom electrode is the cathode and the top electrode is the anode. The prefabricated device further includes an auxiliary layer, and the auxiliary layer is disposed on the side of the bottom electrode away from the electron functional layer;

[0014] The material of the auxiliary layer includes acidic resin.

[0015] In a third aspect, the present application further provides an electronic device, which includes the optoelectronic device according to any one of the first aspect, or the optoelectronic device manufactured by the manufacturing method according to any one of the second aspect.

[0016] The present application provides an optoelectronic device, a manufacturing method of the optoelectronic device, and an electronic device, having the following technical effects:

[0017] In the optoelectronic device, by disposing an auxiliary layer on the side of the cathode away from the electron functional layer, and the material of the auxiliary layer includes acidic resin, to improve the electron mobility of the optoelectronic device, enhance the electron injection efficiency of the optoelectronic device, thereby improving the optoelectronic performance and device life of the optoelectronic device. The manufacturing method of the optoelectronic device has the advantages of simple manufacturing process, easy control of process conditions, and meeting the requirements of large-scale industrial production. Applying the optoelectronic device or the optoelectronic device manufactured by the manufacturing method of the optoelectronic device to an electronic device is beneficial to improving the optoelectronic performance and service life of the electronic device. Description of the Drawings

[0018] The following combines the drawings and describes the specific implementation manners of the present application in detail, and the technical solutions and other beneficial effects of the present application will be obvious.

[0019] Figure 1 It is a schematic structural diagram of the first optoelectronic device provided by the embodiment of the present application.

[0020] Figure 2 It is a schematic structural diagram of the second optoelectronic device provided by the embodiment of the present application.

[0021] Figure 3 It is a schematic structural diagram of the third optoelectronic device provided by the embodiment of the present application.

[0022] The reference numerals are as follows:

[0023] 10: Photoelectric device, 11: Anode, 12: Cathode, 13: Functional layer, 14: Auxiliary layer, 131: Electron functional layer, 132: Light-emitting layer, 133: Hole functional layer, 1331: Hole injection layer, 1332: Hole transport layer. Detailed implementation manners

[0024] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0025] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present invention. The preferred implementation methods and materials described herein are only for demonstration purposes and do not limit the content of the present application.

[0026] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form. It should be understood that the description in a range form is only for convenience and simplicity and should not be construed as a rigid limitation on the scope of the present invention; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0027] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the photoelectric device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the photoelectric device. The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0028] The term "comprising" means "including but not limited to".

[0029] The term "and / or" is used to describe the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B may be singular or plural.

[0030] The term "at least one" means one or more, and "a plurality" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c or a - b - c, where a, b and c can be single or plural respectively.

[0031] In this application, for descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C" or similar, it can be expressed that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or it can be expressed that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can be expressed as layer A is in direct contact with layer B, or it can be expressed that other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0032] Based on this, an embodiment of this application provides an optoelectronic device. The optoelectronic device can be a normal structure or an inverted structure. The optoelectronic device includes but is not limited to a light-emitting device, a solar cell or a photodetector. As Figure 1 shown, the optoelectronic device 10 includes an anode 11, a cathode 12, a functional layer 13 and an auxiliary layer 14. Among them, the anode 11 and the cathode 12 are disposed opposite to each other. The functional layer 13 is disposed between the anode 11 and the cathode 12. The functional layer 13 includes an electron functional layer 131. The electron functional layer includes a metal oxide material. The auxiliary layer 14 is disposed on the side of the cathode 12 away from the electron functional layer 131. The material of the auxiliary layer 14 includes an acidic resin.

[0033] In the optoelectronic device 10 of the embodiment of this application, by disposing the auxiliary layer 14 on the side of the cathode 12 away from the electron functional layer 131, and the material of the auxiliary layer 14 includes an acidic resin, the electron mobility of the optoelectronic device 10 is improved, the electron injection efficiency of the optoelectronic device 10 is enhanced, and thus the optoelectronic performance and device life of the optoelectronic device 10 are improved.

[0034] In some embodiments of the present application, such as Figure 2 and Figure 3 shown, the optoelectronic device 10 further includes a substrate 15 and a packaging layer 16. The material of the substrate 15 includes but is not limited to glass or polyimide, and the material of the packaging layer 16 includes but is not limited to epoxy resin. As Figure 2 shown, when the optoelectronic device 10 is a normal structure, the substrate 15 is disposed on the side of the anode 11 away from the functional layer 13, and the packaging layer 16 is disposed on the side of the auxiliary layer 14 away from the cathode 12. As Figure 3 shown, when the optoelectronic device 10 is an inverted structure, the substrate 15 is disposed on the side of the cathode 12 away from the functional layer 13, and the packaging layer 16 is disposed on the side of the anode 11 away from the functional layer 13.

[0035] In some embodiments of the present application, the acidic resin includes one or more of acrylic resin and alkyd resin. The synthesis monomers of the acrylic resin include but are not limited to one or more of acrylic acid, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, cyclohexyl acrylate, lauryl acrylate, 2-ethylhexyl acrylate, methacrylic acid, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, 2-ethylhexyl methacrylate, isobornyl methacrylate, lauryl methacrylate, styrene, and acrylamide, and / or the degree of polymerization of the acrylic resin is 5000 - 200000; and / or, the synthesis monomers of the alkyd resin include one or more of aliphatic alcohol compounds having 3 - 30 carbon atoms, fatty acid compounds having 3 - 30 carbon atoms, phthalic anhydride, and triglyceride fatty acid esters, and / or the degree of polymerization of the alkyd resin is 5000 - 200000.

[0036] In order to further improve the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the acrylic resin is selected from one or more of the acrylic resin with CAS number 9003-01-4, the acrylic resin with CAS number 94188-59-7, and the acrylic resin with CAS number 25767-39-9; and / or, the alkyd resin is selected from the alkyd resin with CAS number 63148-69-6.

[0037] In order to further improve the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the thickness of the auxiliary layer 14 is 5 μm - 15 μm, for example, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, or a value between any two of the foregoing values.

[0038] In the optoelectronic device 10 of the application embodiment, the electronic functional layer 131 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 131 is, for example, 10 nm to 200 nm. The electronic functional layer 131 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 131 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer; for the electronic functional layer 131 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer. As an example, the electronic functional layer 131 is a single-layer structure, and the electronic functional layer 131 is an electron transport layer.

[0039] The metal oxide material includes a first metal oxide or a first metal oxide doped with a first metal element. Among them, the first metal oxide is selected from one or more of ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , Al 2 O 3 and ZrO 2 ; and / or, the first metal element is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium, and tin. The first metal oxide doped with a first metal element includes, but is not limited to, one or more of magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide. For example, it is Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li xOne or more of O, where 0 < x ≤ 0.5. It is understood that when the electronic functional layer 131 includes multiple materials and the electronic functional layer 131 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or some in the same layer.

[0040] In order to further improve the optoelectronic performance of the optoelectronic device 10, in some embodiments of the present application, the materials of the anode 11 and the cathode 12 are independently selected from one or more of metals and second metal oxides. Among them, the metals include but are not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg; the second metal oxides can be doped or undoped. The doped second metal oxides include but are not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO). The undoped second metal oxides include but are not limited to one or more of TiO 2 、SnO 2 、ZnO and In 2 O 3 one or more of.

[0041] It should be noted that the anode 11 or the cathode 12 can also be a composite electrode. The composite electrode has a structure similar to a "sandwich". The materials of the upper layer and the bottom layer are respectively doped or undoped second metal oxides, and the material of the middle layer is a metal. Examples are AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 、TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 one or more of. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm.

[0042] The applicant found that when the material of the cathode 12 is a metal (such as Ag) and the material of the electronic functional layer 131 includes a first metal oxide (such as ZnO) or a first metal oxide doped with a first metal element (such as Zn (1-x) Mg xWhen (O), if the metal in the cathode 12 comes into contact with the first metal oxide in the electron functional layer 131, an alloy (such as Ag-Zn alloy) will be formed at the interface between the cathode 12 and the electron functional layer 131, thereby realizing electron transport. When an auxiliary layer 14 is provided on the side of the cathode 12 away from the electron functional layer 131, based on the fact that acrylic resin and / or alkyd resin can retain cations for a long time, more metal ions (such as Ag ions) can be generated in the cathode 12. As a result, a larger number of metal ions combine with the first metal oxide under the effect of aging, improving the electron mobility of the optoelectronic device 10 and being beneficial to enhancing the optoelectronic performance and device life of the optoelectronic device 10. It can be understood that during the synthesis process of acrylic resin and / or alkyd resin, acidic raw materials are used to achieve polymerization, such as acidic catalysts, acidic precursors, acidic initiators, etc. The acidic raw materials may remain in the finally synthesized resin product, and the acrylic resin and / or alkyd resin may also undergo hydrolysis reactions to form corresponding acids and alcohols, enabling the auxiliary layer 14 to retain cations for a long time. Therefore, in order to further improve the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the material of the electron functional layer 131 is ZnO and ZnO doped with the first metal element, and the material of the cathode 12 is Ag.

[0043] In some embodiments of the present application, the optoelectronic device 10 is a light-emitting device. Continuing to refer to Figure 1 , the functional layer 13 further includes a light-emitting layer 132 disposed between the electron functional layer 131 and the anode 11. The material of the light-emitting layer 132 includes one or more of organic light-emitting materials and quantum dots. The light-emitting layer 132 can be a single-layer structure or a multi-layer structure, and the thickness of the light-emitting layer 132 is, for example, 10 nm to 100 nm.

[0044] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc.

[0045] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2 nm to 20 nm, for example, it can be 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0046] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell quantum dots, or the material of the shell of the core-shell quantum dots includes but is not limited to at least one of II-VI group compounds, III-V group compounds, IV-VI group compounds, or I-III-VI group compounds. The shell layer of the core-shell quantum dots includes one or more layers. Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of CuInS, CuInSe, and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell quantum dots, or the material of the shell of the core-shell quantum dots, the provided chemical formulas only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be represented, it corresponds to Cd x Zn 1-x Se, 0 < x < 1.

[0047] For inorganic perovskite quantum dots, the general structural formula of the inorganic perovskite quantum dots is AMX 3 , where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0048] For organic perovskite quantum dots, the general structural formula of the organic perovskite quantum dots is CMX 3 , where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0049] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX 3 , where B is selected from organic amine cations, and the organic amine cations include but are not limited to CH 3 (CH 2 ) n-2 NH 3+ (n≥2) or NH 3 (CH 2 ) n NH 3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+, Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0050] When the material of the light-emitting layer 132 includes quantum dots, in order to improve the solution processability of the quantum dots and further enhance the light-emitting efficiency of the optoelectronic device 10, in some embodiments of the present application, ligands are also connected to the surface of the quantum dots. The ligands can be common ligands in the art, including but not limited to fatty carboxylic acid ligands of C 1 ~C 30 , aromatic carboxylic acid ligands of C 6 ~C 30 , fatty thiol ligands of C 1 ~C 30 , thiol aromatic ligands of C 6 ~C 30 , fatty amine ligands of C 1 ~C 30 , aromatic amine ligands of C 6 ~C 30 , fatty phosphine ligands of C 1 ~C 30 , aromatic phosphine ligands of C 6 ~C 30 , aromatic phosphate ligands of C 6 ~C 30 and one or more of halogen ligands.

[0051] Among them, the fatty carboxylic acid ligands of C 1 ~C 30 include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the aromatic carboxylic acid ligands of C 6 ~C 30 include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1-naphthoic acid. The C 1 ~C 30The fatty thiol ligands include, but are not limited to, one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol, C 6 ~C 30 The thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C 1 ~C 30 The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine, C 6 ~C 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indanpropylamine, 4-octylaniline, and benzidine. C 1 ~C 30 The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C 6 ~C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C 6 ~C 30 The aromatic phosphate ester ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0052] To promote the electron-hole transport balance and further improve the optoelectronic performance and device lifetime of the optoelectronic device 10, in some embodiments of the present application, the functional layer 13 further includes a hole functional layer 133 disposed between the electron functional layer 131 and the anode 11. It can be understood that when the optoelectronic device 10 is a light-emitting device, continue to refer to Figure 1 , the functional layer 13 further includes a light-emitting layer 132 and a hole functional layer 133, and the hole functional layer 133 is disposed between the light-emitting layer 132 and the anode 11.

[0053] The hole functional layer 133 can be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 133 is, for example, 10 nm to 200 nm. The hole functional layer 133 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 133 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer. As an example, continue to refer to Figure 1, the hole functional layer 133 is composed of a hole injection layer 1331 and a hole transport layer 1332 which are stacked. The hole injection layer 1331 is closer to the anode 11 than the hole transport layer 1332, and the hole transport layer 1332 is closer to the light-emitting layer 132 than the hole injection layer 1331.

[0054] The materials of the hole functional layer 133 include a first inorganic compound, a first inorganic compound doped with a second metal element, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium oxyphthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,One or more of N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviated as PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Spiro-omeTAD, CAS No. 207739-72-8).

[0055] Among them, the first inorganic compound includes but is not limited to graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO 3 ), tungsten oxide (such as WO 3 ), vanadium oxide (such as V 2 O 5 ), p-type gallium nitride, chromium oxide (such as Cr 2 O 3 ), copper oxide (such as CuO or Cu 2 O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS 2 ), and tungsten sulfide (such as WS 2 ), and the second metal element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

[0056] It can be understood that when the hole functional layer 133 includes multiple materials and the hole functional layer 133 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or part of them in the same layer. For example, when the first hole functional layer 133 is composed of a hole injection layer and a hole transport layer arranged in layers, the materials of the hole functional layer 133 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is TFB.

[0057] The embodiment of the present application also provides a preparation method of an optoelectronic device, which can be used to prepare any one of the optoelectronic devices described above. The preparation method of the optoelectronic device includes the following steps:

[0058] S1. Provide a prefabricated device including a bottom electrode, and form a functional layer on one side of the bottom electrode. The functional layer includes an electron functional layer, and the electron functional layer includes a metal oxide material;

[0059] S2. Form a top electrode on the side of the functional layer away from the bottom electrode.

[0060] Among them, when the optoelectronic device has a normal structure, the bottom electrode is the anode and the top electrode is the cathode. After step S2, the manufacturing method of the optoelectronic device further includes the step of forming an auxiliary layer on the side of the top electrode away from the electron functional layer; or, when the optoelectronic device has an inverted structure, the bottom electrode is the cathode and the top electrode is the anode, and the prefabricated device further includes an auxiliary layer, and the auxiliary layer is disposed on the side of the bottom electrode away from the electron functional layer. It should be noted that the anode, cathode, electron functional layer, and auxiliary layer are all referred to the descriptions above.

[0061] In some embodiments of the present application, the prefabricated device further includes a substrate, the bottom electrode is located on one side of the substrate, and the functional layer is formed on the side of the bottom electrode away from the substrate; among them, when the optoelectronic device has an inverted structure, the auxiliary layer is located between the substrate and the bottom electrode.

[0062] In some embodiments of the present application, when the optoelectronic device has a normal structure, after the step of forming an auxiliary layer on the side of the top electrode away from the electron functional layer, the manufacturing method of the optoelectronic device further includes the step of forming a packaging layer on the side of the auxiliary layer away from the top electrode; or, when the optoelectronic device has an inverted structure, after the step of forming the top electrode, the manufacturing method of the optoelectronic device further includes the step of forming a packaging layer on the side of the top electrode away from the electron functional layer. Optionally, the material of the packaging layer is epoxy resin.

[0063] In some embodiments of the present application, the optoelectronic device is a light-emitting device, and the functional layer further includes a light-emitting layer, and the structural composition of the light-emitting layer is referred to the descriptions above. When the optoelectronic device has a normal structure, the step of forming a functional layer on one side of the bottom electrode includes: sequentially forming a light-emitting layer and an electron functional layer on one side of the bottom electrode; the top electrode is formed on the side of the electron functional layer away from the light-emitting layer; further, when the functional layer further includes a hole functional layer, the step of forming a functional layer on one side of the bottom electrode includes: sequentially forming a hole functional layer, a light-emitting layer, and an electron functional layer on one side of the bottom electrode. When the optoelectronic device has an inverted structure, the step of forming a functional layer on one side of the bottom electrode includes: sequentially forming an electron functional layer and a light-emitting layer on one side of the bottom electrode; further, when the functional layer further includes a hole functional layer, the step of forming a functional layer on one side of the bottom electrode includes: sequentially forming an electron functional layer, a light-emitting layer, and a hole functional layer on one side of the bottom electrode.

[0064] In some embodiments of the present application, the manufacturing method of the auxiliary layer includes the following steps:

[0065] S11. Depositing a dispersion liquid including an acidic resin;

[0066] S12. Performing ultraviolet light irradiation treatment on the deposited dispersion liquid, and then performing drying treatment to obtain the auxiliary layer.

[0067] In step S11, the deposition method of the dispersion includes, but is not limited to, one or more of spin coating, printing, blade coating, dip coating, soaking, spraying, roll coating, casting, slot die coating, and bar coating. The acidic resin is as described above and will not be elaborated here.

[0068] In some embodiments of the present application, the dispersant of the dispersion is selected from one or more of water, C 1 ~C 30 fatty carboxylic acid compounds, and compounds having the structure shown by the general formula R 1 COOR 2 , where R 1 and R 2 are independently selected from alkyl groups having 1 to 10 carbon atoms. Among them, the C 1 ~C 30 fatty carboxylic acid compounds include, but are not limited to, one or more of formic acid, acetic acid, propionic acid, butyric acid, caproic acid, octanoic acid, oleic acid, and linoleic acid; and / or, R 1 and R 2 are independently selected from methyl, ethyl, n-propyl, or isopropyl.

[0069] In order to balance improving the solution processability of the dispersion and increasing the film-forming density of the auxiliary layer, in some embodiments of the present application, the concentration of the acidic resin in the dispersion is 15 mg / mL to 60 mg / mL, such as 15 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, or a value between any two of the foregoing values.

[0070] In step S12, the ultraviolet light irradiation treatment is used to increase the crosslinking degree of the resin (acrylic resin and / or alkyd resin), thereby increasing the crosslinking density of the auxiliary layer, and the drying treatment is used to make the deposited dispersion obtain higher energy and transform into a cured film. Among them, the drying treatment includes, but is not limited to, one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment, and microwave irradiation annealing treatment.

[0071] In order to further improve the cation retention time of the auxiliary layer, thereby further improving the optoelectronic performance and device life of the optoelectronic device, in some embodiments of the present application, the light wavelength is 200 nm to 400 nm, and the light irradiation time is 200 s to 300 s. The light irradiation time can be, for example, 200 s, 230 s, 250 s, 270 s, 290 s, 300 s, or a value between any two of the foregoing values.

[0072] It should be noted that, except for the auxiliary layer, the preparation methods of other film layers in the optoelectronic device include, but are not limited to, chemical methods and / or physical methods. Among them, the chemical methods include, but are not limited to, one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. The physical methods include, but are not limited to, physical coating methods and solution methods. The physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. The solution methods include, but are not limited to, one or more of spin coating, printing, blade coating, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating.

[0073] After the preparation of each film layer of the optoelectronic device is completed, a packaging process is also required. The packaging process can be carried out by using common machine packaging or manual packaging. In the environment of the packaging process, the oxygen content and water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device. In some embodiments of the present application, epoxy resin is used for packaging to further improve the performance stability of the optoelectronic device.

[0074] The embodiments of the present application also provide an electronic device. The electronic device includes any one of the optoelectronic devices described above, or the electronic device includes an optoelectronic device prepared by using any one of the preparation methods of the optoelectronic devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical device, a camera, a game console, a digital camera, a car navigator, an electronic billboard, an automated teller machine, a smart bracelet, a smart watch, a Virtual Reality (VR) device, or a wearable device.

[0075] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples, and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0076] Example 1

[0077] This example provides an optoelectronic device and a method for preparing the same. The optoelectronic device is a quantum dot light-emitting diode with a normal structure. As shown in Figure 2 , in the direction from bottom to top, the optoelectronic device 10 includes a substrate 15, an anode 11, a functional layer 13, a cathode 12, an auxiliary layer 14, and a packaging layer 16 that are sequentially stacked. The functional layer 13 includes a hole functional layer 133, a light-emitting layer 132, and an electron functional layer 131 that are sequentially stacked. The hole functional layer 133 is composed of a hole injection layer 1331 and a hole transport layer 1332 that are stacked. The hole injection layer 1331 is closer to the anode 11 than the hole transport layer 1332. The light-emitting area of the optoelectronic device is 0.04 cm 2 .

[0078] The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0079] The material of the substrate 15 is glass, and the average thickness of the substrate 15 is 2 mm;

[0080] The material of the anode 11 is ITO, and the average thickness of the anode 11 is 10 nm;

[0081] The material of the cathode 12 is Ag, and the average thickness of the cathode 12 is 35 nm;

[0082] The material of the electron functional layer 131 is nano-ZnO (average particle size is 8 nm), and the average thickness of the electron functional layer 131 is 20 nm;

[0083] The material of the light-emitting layer 132 is CdSe (core) / ZnS (shell) quantum dots. The emission color of the CdSe / ZnS quantum dots is blue. The average particle size of the CdSe / ZnS quantum dots is 12 nm, and the average thickness of the light-emitting layer 132 is 40 nm;

[0084] The material of the hole injection layer 1331 is PEDOT:PSS, and the average thickness of the hole injection layer 1331 is 100 nm;

[0085] The material of the hole transport layer 1332 is TFB, and the average thickness of the hole transport layer 1332 is 40 nm;

[0086] The material of the auxiliary layer 14 is acrylic resin (CAS No. 25767-39-9, purchased from Hubei Jusheng Technology Co., Ltd.), and the average thickness of the auxiliary layer 14 is 10 μm;

[0087] The material of the packaging layer 16 is acid-free epoxy resin LOCTITE 3335.

[0088] The method for preparing the optoelectronic device in this example includes the following steps:

[0089] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 15 min to obtain a substrate including an anode;

[0090] S1.2. Under the air environment of normal temperature and pressure, spin-coat an aqueous solution of PEDOT:PSS with a mass fraction of 2.8% on the side of the anode far from the substrate, and then place it in a constant temperature heat treatment at 150 °C to cure into a film to obtain a hole injection layer;

[0091] S1.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the side of the hole injection layer far from the anode, and then place it in a constant temperature heat treatment at 170 °C to cure into a film to obtain a hole transport layer;

[0092] S1.4. Under the nitrogen environment of normal temperature and pressure, spin-coat a CdSe / ZnS quantum dot - n-octane solution with a concentration of 20 mg / mL on the side of the hole transport layer far from the hole injection layer, and then place it in a constant temperature heat treatment at 80 °C to cure into a film to obtain a light-emitting layer;

[0093] S1.5. Under the nitrogen environment of normal temperature and pressure, spin-coat a nano-ZnO - ethanol solution with a concentration of 30 mg / mL on the side of the light-emitting layer far from the hole transport layer, and then place it in a constant temperature heat treatment at 80 °C to cure into a film to obtain an electron functional layer;

[0094] S1.6. Place the prefabricated device completed in step S1.5 in an evaporation chamber with a pressure of 4×10 -6 mbar, and thermally evaporate Ag on the side of the electron functional layer far from the light-emitting layer through a mask plate to obtain a cathode;

[0095] S1.7. Take an appropriate amount of acrylic resin and disperse it in water to obtain an acrylic resin dispersion. Under the nitrogen environment of normal temperature and pressure, spin-coat the acrylic resin dispersion on the side of the cathode far from the electron functional layer, and then perform ultraviolet light irradiation treatment on the spin-coated acrylic resin dispersion. The light wavelength is 254 nm, and the time of ultraviolet light irradiation treatment is 230 s. Then place it in a constant temperature heat treatment at 80 °C for 30 min to obtain an auxiliary layer;

[0096] S1.8. Encapsulate with non-acid epoxy resin LOCTITE 3335 to obtain an optoelectronic device.

[0097] Example 2

[0098] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that the average thickness of the auxiliary layer is replaced by "5 μm".

[0099] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0100] Embodiment 3

[0101] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that the average thickness of the auxiliary layer is replaced by "15 μm".

[0102] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0103] Embodiment 4

[0104] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that the material of the auxiliary layer is replaced by "acrylic resin (CAS No. 94188-59-7, purchased from Sigma-Aldrich (Shanghai) Trading Co., Ltd.)".

[0105] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0106] Embodiment 5

[0107] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that the material of the auxiliary layer is replaced by "acrylic resin (CAS No. 94188-59-7, purchased from Sigma-Aldrich (Shanghai) Trading Co., Ltd.)", and the average thickness of the auxiliary layer is replaced by "5 μm".

[0108] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0109] Embodiment 6

[0110] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that the material of the auxiliary layer is replaced by "acrylic resin (CAS No. 94188-59-7, purchased from Sigma-Aldrich (Shanghai) Trading Co., Ltd.)", and the average thickness of the auxiliary layer is replaced by "15 μm".

[0111] In this embodiment, the preparation method of the optoelectronic device is carried out with reference to Embodiment 1.

[0112] Embodiment 7

[0113] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the auxiliary layer is replaced with "acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.)".

[0114] In this embodiment, the preparation method of the optoelectronic device is carried out with reference to Embodiment 1.

[0115] Embodiment 8

[0116] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the auxiliary layer is replaced with "acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.)", and the average thickness of the auxiliary layer is replaced with "5 μm".

[0117] In this embodiment, the preparation method of the optoelectronic device is carried out with reference to Embodiment 1.

[0118] Embodiment 9

[0119] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the auxiliary layer is replaced with "acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.)", and the average thickness of the auxiliary layer is replaced with "15 μm".

[0120] In this embodiment, the preparation method of the optoelectronic device is carried out with reference to Embodiment 1.

[0121] Embodiment 10

[0122] This embodiment provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the auxiliary layer is replaced with "alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.)".

[0123] In this embodiment, the preparation method of the optoelectronic device is carried out with reference to Embodiment 1.

[0124] Embodiment 11

[0125] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment lies only in that: the material of the auxiliary layer is replaced with "alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.)", and the average thickness of the auxiliary layer is replaced with "5 μm".

[0126] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0127] Embodiment 12

[0128] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment lies only in that: the material of the auxiliary layer is replaced with "alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.)", and the average thickness of the auxiliary layer is replaced with "15 μm".

[0129] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0130] Embodiment 13

[0131] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment lies only in that: the material of the auxiliary layer is replaced with "a mixture of acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.) and alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.), and the mass ratio of acrylic resin to alkyd resin is 1:1".

[0132] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0133] Embodiment 14

[0134] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment lies only in that: the material of the auxiliary layer is replaced with "a mixture of acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.) and alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.), and the mass ratio of acrylic resin to alkyd resin is 1:1", and the average thickness of the auxiliary layer is replaced with "5 μm".

[0135] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Embodiment 1.

[0136] Embodiment 15

[0137] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the auxiliary layer is replaced with "a mixture of acrylic resin (CAS No. 9003-01-4, purchased from Wuhan Rongcan Biotechnology Co., Ltd.) and alkyd resin (CAS No. 63148-69-6, purchased from Jinjinle (Hunan) Chemical Co., Ltd.), and the mass ratio of acrylic resin to alkyd resin is 1:1", and the average thickness of the auxiliary layer is replaced with "15 μm".

[0138] The preparation method of the optoelectronic device in this embodiment refers to that in Embodiment 1.

[0139] Comparative Example

[0140] This comparative example provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this comparative example is only that: the auxiliary layer is omitted.

[0141] Compared with the preparation method of the optoelectronic device in Embodiment 1, the difference of the preparation method of the optoelectronic device in this comparative example is only that: step S1.7 is omitted.

[0142] Experimental Example

[0143] First, the performance of the packaged optoelectronic devices in Embodiments 1 to 15 and the comparative example is detected respectively. An efficiency test system built with an IVL optical characteristic measurement device (including Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probe and fixture, various related connecting wires and data cards, efficiency test dark box and data acquisition system, etc.) is used to detect parameters such as voltage, current, brightness, and emission spectrum of each optoelectronic device, and then key parameters such as maximum external quantum efficiency and power efficiency are calculated, and the device lifetime of each optoelectronic device is tested with a lifetime test device. In addition, the curve of the change of brightness with time of each optoelectronic device under a constant current density (63.7 mA / cm 2 ) is monitored. Each optoelectronic device reaches the highest brightness from the initial brightness, and the maximum brightness value (L max , nit) is obtained; the optoelectronic device is driven with a constant current of 2 mA, and the corresponding voltage value (U@2 mA, V) is obtained.

[0144] Among them, the test method of current efficiency is: intermittently collect the brightness values of the optoelectronic device in the range of driving voltage from 0 V to 8 V, and the collected light-emitting area is 0.0314 cm 2, the voltage value of the initial collected brightness is 3V, and it is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the optoelectronic device under the collection conditions of that time, and the maximum current efficiency (C.E max , cd / A) is obtained.

[0145] The test method for the device life includes the steps of: under the drive of a constant current density (63.7 mA / cm 2 ), use a 128-channel QLED life test system to perform electroluminescence life analysis on each optoelectronic device, record the time (T95, h) required for each optoelectronic device to decay from the maximum brightness to 95%, and calculate through the decay fitting formula to obtain the time (T95@1000nit, h) required for each optoelectronic device to decay from 100% to 95% at a brightness of 1000 nit.

[0146] During the performance detection process, three parallel samples are set for each type of optoelectronic device, and the test average value of three parallel samples is taken for each performance detection parameter. The performance detection results of each optoelectronic device at 25°C are shown in Table 1 below:

[0147] Table 1 List of performance detection results of the packaged optoelectronic devices in Examples 1 to 12 and the comparative example

[0148]

[0149]

[0150] As can be seen from Table 1, compared with the optoelectronic devices in the comparative example, the comprehensive performance of the optoelectronic devices in most of the examples has significant advantages, and the optoelectronic performance and device life of the optoelectronic devices in most of the examples are better than those of the optoelectronic devices in the comparative example. Taking Example 12 as an example, the T95@1000nit of the optoelectronic device in Example 12 is 1.22 times that of the optoelectronic device in the comparative example, and the L max of the optoelectronic device in Example 12 is 1.23 times that of the L max of the optoelectronic device in the comparative example, and the C.E max of the optoelectronic device in Example 12 is 1.23 times that of the C.E max of the optoelectronic device in the comparative example.

[0151] This shows that adding an auxiliary layer on the side of the cathode far from the electron functional layer, and the material of the auxiliary layer includes one or more of acrylic resin and alkyd resin, can improve the optoelectronic performance and device life of the optoelectronic device.

[0152] Subsequently, the optoelectronic devices in the first state in Example 1, Example 4, Example 7, Example 12, Example 15 and the comparative example were respectively subjected to performance tests. The first state was that the packaged optoelectronic devices were left standing for 30 days in an environment with a temperature of 25°C and a humidity of 60%. The performance test results are shown in Table 2 below:

[0153] Table 2 Summary of performance test results of optoelectronic devices in the first state in Example 1, Example 4, Example 7, Example 12, Example 15 and the comparative example

[0154]

[0155] As can be seen from Table 2, compared with the optoelectronic devices in the first state in the comparative example, the optoelectronic devices in the first state in Example 1, Example 4, Example 7, Example 12 and Example 15 have better comprehensive performance. In addition, as can be seen from Table 1 and Table 2, for the optoelectronic devices in Example 1, Example 4, Example 7, Example 12 and Example 15, compared with the performance of the packaged devices, the performance of the devices in the first state is more advantageous; however, for the optoelectronic devices in the comparative example, compared with the performance of the packaged devices, the performance of the devices in the first state is worse.

[0156] Next, the optoelectronic devices in the second state in Example 1, Example 4, Example 7, Example 12, Example 15 and the comparative example were respectively subjected to performance tests. The second state was that the packaged optoelectronic devices were left standing for 60 days in an environment with a temperature of 25°C and a humidity of 60%. The performance test results are shown in Table 3 below:

[0157] Table 3 Summary of performance test results of optoelectronic devices in the second state in Example 1, Example 4, Example 7, Example 12, Example 15 and the comparative example

[0158]

[0159] As can be seen from Table 3, compared with the optoelectronic devices in the second state in the comparative example, the optoelectronic devices in the second state in Example 1, Example 4, Example 7, Example 12 and Example 15 have better comprehensive performance. In addition, as can be seen from Table 2 and Table 3, for the optoelectronic devices in Example 1, Example 4 and Example 7, compared with the performance of the devices in the first state, the performance of the devices in the second state is slightly reduced; for the optoelectronic devices in Example 12 and Example 15, compared with the performance of the devices in the first state, the performance of the devices in the second state is better; for the optoelectronic devices in the comparative example, compared with the performance of the devices in the first state, the performance of the devices in the second state decreases significantly.

[0160] In summary, by adding an auxiliary layer on the side of the cathode far from the electron functional layer, and the material of the auxiliary layer includes one or more of acrylic resin and alkyd resin, the optoelectronic performance and device life of the optoelectronic device are effectively improved, and it is beneficial to improve the performance stability of the optoelectronic device.

[0161] The above has introduced in detail an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A optoelectronic device, characterized in that, comprising: An anode and a cathode arranged opposite to each other; A functional layer disposed between the anode and the cathode, the functional layer includes an electron functional layer, and the electron functional layer includes a metal oxide material; An auxiliary layer disposed on a side of the cathode away from the electron functional layer; wherein, the material of the auxiliary layer includes an acidic resin.

2. The optoelectronic device according to claim 1, characterized in that, the acidic resin includes one or more of acrylic resin and alkyd resin; and / or the optoelectronic device further includes a substrate and a packaging layer; when the optoelectronic device is a normal structure, the substrate is disposed on a side of the anode away from the functional layer, and the packaging layer is disposed on a side of the auxiliary layer away from the cathode, or when the optoelectronic device is an inverted structure, the substrate is disposed on a side of the auxiliary layer away from the cathode, and the packaging layer is disposed on a side of the anode away from the functional layer; optionally, the material of the packaging layer includes epoxy resin.

3. The optoelectronic device according to claim 2, characterized in that, the synthesis monomers of the acrylic resin include one or more of acrylic acid, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, cyclohexyl acrylate, lauryl acrylate, 2-ethylhexyl acrylate, methacrylic acid, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, 2-ethylhexyl methacrylate, isobornyl methacrylate, lauryl methacrylate, styrene, and acrylamide, and / or the degree of polymerization of the acrylic resin is 5000-200000; and / or the synthesis monomers of the alkyd resin include one or more of aliphatic alcohol compounds having 3-30 carbon atoms, fatty acid compounds having 3-30 carbon atoms, phthalic anhydride, and triglyceride fatty acids, and / or the degree of polymerization of the alkyd resin is 5000-200000.

4. The optoelectronic device according to claim 2, characterized in that, the acrylic resin is selected from one or more of the acrylic resin with CAS number 9003-01-4, the acrylic resin with CAS number 94188-59-7, and the acrylic resin with CAS number 25767-39-9; and / or the alkyd resin is selected from the alkyd resin with CAS number 63148-69-6.

5. The optoelectronic device according to claim 1, characterized in that, the thickness of the auxiliary layer is 5μm-15μm; and / or The metal oxide material includes a first metal oxide or a first metal oxide doped with a first metal element, and the first metal oxide is selected from one or more of ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , Al 2 O 3 and ZrO 2 , and the first metal element is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium, and tin; and / or The material of the anode and the material of the cathode each independently include one or more of a metal and a second metal oxide; wherein, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg, and / or the second metal oxide is selected from indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO 2 、ZnO, and In 2 O 3 one or more of; and / or The functional layer further includes a light-emitting layer disposed between the electronic functional layer and the anode, and the material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dots; the organic light-emitting materials are selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots; the materials of the single-component quantum dots, the cores of the core-shell quantum dots, and the shells of the core-shell quantum dots are independently selected from at least one of group II-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, and the shell layer of the core-shell quantum dots includes one or more layers;Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe; the I-III-VI group compounds are selected from one or more of CuInS, CuInSe and AgInS; and / or, the structural general formula of the inorganic perovskite quantum dots is AMX; 3 , where A is Cs + , M is a divalent metal cation, and M is selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ and Eu 2+ One or more of them, X is a halogen anion; and / or, the structural general formula of the organic perovskite quantum dots is CMX 3 , C is formamidinium; and / or, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX 3 , B is an organic amine cation; and / or The functional layer further includes a hole functional layer disposed between the electronic functional layer and the anode. The materials of the hole functional layer include one or more of a first inorganic compound, a first inorganic compound doped with a second metal element, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium oxyphthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazolyl)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexyldi[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene. Among them, the first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and the second metal element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

6. The optoelectronic device according to claim 5, wherein, the materials of the electronic functional layer are ZnO and ZnO doped with the first metal element, and the material of the cathode is Ag.

7. A method for manufacturing an optoelectronic device, wherein, it includes the following steps: providing a prefabricated device including a bottom electrode, forming a functional layer on one side of the bottom electrode, the functional layer including an electronic functional layer, and the electronic functional layer including a metal oxide material; and forming a top electrode on the side of the functional layer away from the bottom electrode; Wherein, when the optoelectronic device is of a normal structure, the bottom electrode is the anode and the top electrode is the cathode. After the step of forming the top electrode, the method for preparing the optoelectronic device further includes the step of forming an auxiliary layer on a side of the top electrode away from the electron functional layer; Alternatively, when the optoelectronic device is of an inverted structure, the bottom electrode is the cathode and the top electrode is the anode. The prefabricated device further includes an auxiliary layer, and the auxiliary layer is disposed on a side of the bottom electrode away from the electron functional layer; The material of the auxiliary layer includes an acidic resin.

8. The preparation method according to claim 7, characterized in that, The prefabricated device further includes a substrate. The bottom electrode is located on one side of the substrate, and the functional layer is formed on a side of the bottom electrode away from the substrate. Wherein, when the optoelectronic device is of an inverted structure, the auxiliary layer is located between the substrate and the bottom electrode; and / or When the optoelectronic device is of a normal structure, after the step of forming an auxiliary layer on a side of the top electrode away from the electron functional layer, the method for preparing the optoelectronic device further includes the step of forming a packaging layer on a side of the auxiliary layer away from the top electrode; or, when the optoelectronic device is of an inverted structure, after the step of forming the top electrode, the method for preparing the optoelectronic device further includes the step of forming a packaging layer on a side of the top electrode away from the electron functional layer; Optionally, the material of the packaging layer is an epoxy resin; and / or The acidic resin includes one or more of acrylic resin and alkyd resin; and / or The method for preparing the auxiliary layer includes the following steps: Depositing a dispersion liquid including an acidic resin; and Performing ultraviolet light irradiation treatment on the deposited dispersion liquid, and then performing drying treatment to obtain the auxiliary layer.

9. The preparation method according to claim 8, characterized in that, The synthesis monomers of the acrylic resin include one or more of acrylic acid, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, cyclohexyl acrylate, lauryl acrylate, 2-ethylhexyl acrylate, methacrylic acid, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, 2-ethylhexyl methacrylate, isobornyl methacrylate, lauryl methacrylate, styrene, and acrylamide, and / or the degree of polymerization of the acrylic resin is 200 to 2000; and / or The synthesis monomers of the alkyd resin include one or more of aliphatic alcohol compounds having 3 to 30 carbon atoms, fatty acid compounds having 3 to 30 carbon atoms, phthalic anhydride, and triglyceride fatty acids, and / or the degree of polymerization of the alkyd resin is 200 to 2000; and / or The metal oxide material includes a first metal oxide or a first metal oxide doped with a first metal element, and the first metal oxide is selected from one or more of ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , Al 2 O 3 and ZrO 2 ; and the first metal element is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium, and tin; and / or The dispersant of the dispersion liquid is selected from one or more of water, fatty carboxylic acid compounds with C 1 ~C 30 and compounds having the structure shown by the general formula R 1 COOR 2 , where R 1 and R 2 are each independently selected from alkyl groups having 1 to 10 carbon atoms; and / or In the ultraviolet light irradiation treatment, the light wavelength is 200 nm to 400 nm, and the light irradiation time is 200 s to 300 s; and / or The concentration of the acidic resin in the dispersion liquid is 15 mg / mL to 60 mg / mL.

10. The preparation method according to claim 9, characterized in that, The acrylic resin is selected from one or more of the acrylic resin with CAS number 9003-01-4, the acrylic resin with CAS number 94188-59-7, and the acrylic resin with CAS number 25767-39-9; and / or The alkyd resin is selected from the alkyd resin with CAS number 63148-69-6; and / or The material of the electronic functional layer is ZnO and ZnO doped with the first metal element, and the material of the cathode is Ag.

11. An electronic device, characterized in that it includes the optoelectronic device described in any one of claims 1 to 6, or the optoelectronic device prepared by the preparation method described in any one of claims 7 to 10.

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