Main shaft lifting and rotating device used for vapor deposition equipment and using method of main shaft lifting and rotating device

Abstract

The invention discloses a main shaft lifting and rotating device for vapor deposition equipment and a using method, and relates to the technical field of vapor deposition equipment.The main shaft lifting and rotating device comprises a support, a chemical vapor deposition furnace is fixedly installed on the top face of the support, and a furnace door is installed on the front side wall of the chemical vapor deposition furnace through a connecting piece; the lifting and rotating mechanism is arranged in the furnace door, the lifting and rotating mechanism comprises a base, a mounting groove is formed in the top surface of the base, a servo motor is fixedly mounted in the mounting groove, and the top surface of the base is rotationally connected with a main shaft body. Real-time monitoring and accurate control of the concentration of mixed gas in the reaction chamber are achieved, an electrochemical sensor, a resistance-type semiconductor sensor and a heat-conducting gas sensor in the detection assembly can accurately measure the concentration of methyl trichlorosilane, the concentration of hydrogen and the concentration of argon respectively, and comprehensive monitoring of gas components in the reaction chamber is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of vapor deposition equipment, and in particular to a spindle lifting and rotating device used in vapor deposition equipment and a using method thereof. Background Art

[0002] In the field of semiconductor manufacturing, vapor deposition technology is a crucial process. It introduces specific raw material gases, such as a mixture of methyltrichlorosilane and hydrogen and argon, into a chemical vapor deposition furnace to cause chemical reactions or physical adsorption on the surface of the wafer substrate, thereby forming the desired thin film material. However, in the vapor deposition process, the problem of gas flow and distribution has always been one of the key factors affecting deposition quality and efficiency.

[0003] The spindle lifting and rotating device in traditional vapor deposition equipment, although it can realize the rotation and lifting of wafer substrates, its movement state has a significant and complex impact on the gas flow pattern in the reaction chamber. Gas flow plays a decisive role in the vapor deposition process. It is responsible for transporting the raw gas from the gas supply system to the chemical vapor deposition furnace and ensuring that these gases can be evenly and efficiently diffused to the surface of the wafer substrate. However, when the spindle lifting and rotating device is in motion, it may cause a series of complex gas flow phenomena, such as eddies and turbulence, which will seriously interfere with the normal transportation and diffusion process of the raw gas, resulting in significant deviations in the distribution of the gas in the reaction chamber. The formation of eddies and turbulence is mainly due to the shear force and centrifugal force generated by the movement of the spindle lifting and rotating device. These forces will change the flow direction of the gas, causing it to rotate and turbulent. The existence of eddies and turbulence will not only Reducing the delivery efficiency of the raw gas will also increase the degree of mixing between the gases, thereby changing the gas composition and concentration distribution in the reaction chamber. In addition, if the design and motion control of the spindle lifting and rotating device are unreasonable, it may further aggravate the unevenness of the gas flow. For example, if the spindle rotates too fast or the lifting speed is unstable, it will cause stronger eddy and turbulent phenomena, which will further interfere with the delivery and diffusion process of the raw gas, resulting in a more uneven distribution of the gas in the reaction chamber. The unevenness of the gas flow has a serious impact on the deposition quality and efficiency. First, it will cause the raw gas to be unevenly distributed on the surface of the wafer substrate, thereby affecting the uniformity of the deposition rate. Secondly, the unevenness of the gas flow will also trigger a series of complex chemical reactions and physical processes, such as local overheating, local reaction rate is too fast, etc., which will further affect the quality and performance of the film; Therefore, based on the above search and in combination with the prior art, a spindle lifting and rotating device and a method of use for a vapor deposition device are proposed to solve the above problems. Summary of the invention

[0004] The purpose of the present invention is to provide a spindle lifting and rotating device used in a vapor deposition device and a method of use to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions: A spindle lifting and rotating device used in a vapor deposition device comprises a bracket, a chemical vapor deposition furnace is fixedly installed on the top surface of the bracket, a furnace door is installed on the front side wall of the chemical vapor deposition furnace through a connecting piece, and also comprises a lifting and rotating mechanism, which is arranged inside the furnace door, and the lifting and rotating mechanism comprises a base, a mounting groove is opened on the top surface of the base, a servo motor is fixedly installed inside the mounting groove, and a spindle body is rotatably connected to the top surface of the base; The detection component is arranged on the base, and the detection component comprises: an L-shaped block, the L-shaped block is fixedly mounted on the bottom surface of the base, a moving groove is opened on the side wall of the L-shaped block, a reciprocating screw rod is rotatably connected to the inner wall of the moving groove, a coupling is fixedly mounted on the outer surface of the reciprocating screw rod and the main shaft body, a transmission belt is arranged between the two couplings, a moving block is threadedly connected to the outer surface of the reciprocating screw rod, and the moving block slides in the moving groove; A placing component is arranged on the main spindle body, and there are three groups of the placing components, and the placing components are used to place the wafer substrate.

[0006] Preferably, the placement component includes: a cylinder, which is arranged on the outer surface of the main shaft body, the bottom surface of the cylinder is provided with a polygonal groove, the polygonal groove has the same specifications as the main shaft body, the bottom surface of the cylinder is provided with a plurality of limiting holes, the top surface of the cylinder is provided with a plurality of limiting columns, the outer surface of the cylinder is fixedly installed with an epitaxial base, and the top surface of the epitaxial base is provided with a plurality of fixing grooves.

[0007] Preferably, the detection component also includes: a protective shell 2, wherein the protective shell 2 is fixedly mounted on the side wall of the moving block, and an electrochemical sensor, a resistive semiconductor sensor and a thermal conductivity gas sensor are respectively fixedly mounted inside the protective shell 2, and the sensing ends of the electrochemical sensor, the resistive semiconductor sensor and the thermal conductivity gas sensor penetrate the inner wall of the protective shell 2 and extend to the outside of the protective shell 2, and the detection component also includes a traction member.

[0008] Preferably, the traction member includes: a circular magnet, which is sleeved on the outer surface of the main shaft body, three traction plates are fixedly installed on the top surface of the circular magnet, the side walls of the three traction plates are each provided with a plurality of ventilation holes, the side walls of the three traction plates are each fixedly installed with a protective shell three, the interiors of the three protective shells three are each fixedly installed with an exhaust fan, and the side walls of the three protective shells three are each provided with a connecting pipe.

[0009] Preferably, the traction member further comprises: three annular tubes, each of which is mounted on the outer walls of three cylinders through a plurality of connecting rods, each of which has a plurality of through holes on its bottom surface, and the other ends of the three connecting tubes are respectively connected to the three annular tubes.

[0010] Preferably, a thread groove is formed on the top surface of the main shaft body, a limit block is arranged above the main shaft body, a threaded rod is fixedly mounted on the bottom surface of the limit block, and the threaded rod cooperates with the thread groove.

[0011] Preferably, the connecting part includes: two fixed plates, which are distributed up and down and are fixedly mounted on the side walls of the chemical vapor deposition furnace, a rotating column is rotatably connected between the two fixed plates, and connecting plates are fixedly mounted on the outer surfaces of the two rotating columns, and the side walls of the connecting plates are connected to the front side walls of the furnace door.

[0012] Preferably, the cross-sectional shape of the spindle body is polygonal, the bottom surface of the spindle body is connected to the output shaft of the servo motor, a lifting plate is slidably mounted on the outer surface of the spindle body, a sliding groove is provided on the side wall of the base, a slider is slidably connected inside the sliding groove, a connecting block is fixedly mounted on the side wall of the slider, a protective shell 1 is fixedly mounted on the top surface of the connecting block, an electric push rod is fixedly mounted inside the protective shell 1, and the output end of the electric push rod is connected to the bottom surface of the lifting plate.

[0013] The present invention also provides a method for using a spindle lifting and rotating device used in a vapor deposition device, which is applied to the spindle lifting and rotating device used in the above-mentioned vapor deposition device, and comprises the following steps: S1: Ensure that the bracket firmly supports the entire device, check whether the chemical vapor deposition furnace is intact and whether the furnace door can be opened and closed normally, confirm that the servo motor on the base is correctly installed and check its working status, check whether the spindle body is firmly connected to the base and the polygonal cross-section shape is intact, verify whether the lifting plate can slide smoothly on the spindle body, and whether the electric push rod can drive the lifting plate to move up and down through the connecting block and the slider, check whether the L-shaped block, moving groove, reciprocating screw rod, coupling, and transmission belt detection component parts are installed correctly, verify whether the placement component is ready, and the wafer substrate can be stably installed on the spindle body; S2: Use the connector to open the furnace door so that the wafer substrate can be placed in the placement assembly, the wafer substrate is placed in the polygonal groove of the cylinder, and it is ensured to be stably fixed through the limiting holes and limiting columns, the furnace door is closed, and locked with the connector to ensure the sealing during the vapor deposition process; S3: Start the servo motor to drive the main shaft body to rotate through the coupling and the transmission belt. Use the electric push rod to drive the lifting plate to move up and down through the slider and the connecting block as needed to adjust the position of the wafer substrate in the chemical vapor deposition furnace; S4: Start the electrochemical sensor, the resistive semiconductor sensor and the thermal conductivity gas sensor in the detection component to monitor the concentration of the mixed gas in the reaction chamber in real time, and adjust the gas flow and reaction conditions in the vapor deposition process according to the data fed back by the sensor to ensure that a uniform deposition layer is formed on the wafer substrate; S5: After the vapor deposition process is completed, the rotation of the servo motor is stopped first, and the lifting plate is lowered to the lowest position using an electric push rod to remove the wafer substrate; S6: Open the furnace door, take out the deposited wafer substrate, clean the residues in the chemical vapor deposition furnace and the placed components, and prepare for the next use.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. In the present invention, by providing a lifting and rotating mechanism, the wafer substrate can be stably rotated and lifted during the chemical vapor deposition process. The mechanism uses a servo motor to drive the main shaft body to rotate, ensuring that the wafer substrate can evenly receive the deposition of the mixed gas in the reaction chamber, thereby significantly improving the uniformity of the deposition rate and the consistency of the film quality. In addition, through the precise control of the electric push rod, the height adjustment of the wafer substrate in the reaction chamber is achieved, meeting the requirements of different deposition processes for the position of the wafer substrate. The performance of the vapor deposition equipment is improved; 2. In the present invention, by providing a detection component, real-time monitoring and precise control of the concentration of the mixed gas in the reaction chamber are achieved. The electrochemical sensor, the resistive semiconductor sensor and the thermal conductivity gas sensor in the detection component can respectively accurately measure the concentrations of methyltrichlorosilane, hydrogen and argon, ensuring comprehensive monitoring of the gas composition in the reaction chamber. At the same time, by utilizing the linkage mechanism of the coupling, the transmission belt and the reciprocating screw, the sensor can be raised and lowered with the rotation of the main shaft, thereby realizing dynamic detection of the concentration of the mixed gas around the three groups of placement components, which not only improves the stability and controllability of the vapor deposition process, but also effectively avoids the difference in deposition rate caused by uneven gas concentration, ensuring high-quality deposition of the wafer substrate; 3. In the present invention, by providing a traction member, the gas flow and deposition effect are optimized. The traction member realizes the effective guidance and supplement of the mixed gas in the reaction chamber through the cooperation of the circular magnet, the traction plate, the protective shell, the exhaust fan and the annular tube. When it is detected that the concentration of the mixed gas around a group of placed components is insufficient, the traction member can respond quickly, suck the mixed gas through the exhaust fan, and evenly spray it onto the wafer substrate through the annular tube, which not only improves the utilization rate of the raw material gas, but also ensures the uniformity of the gas distribution on the surface of the wafer substrate, thereby further improving the uniformity of the deposition rate and the consistency of the film quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the structure of the furnace door in the open state of the present invention; Figure 3 It is a schematic diagram of the overall structure of the lifting and rotating mechanism of the present invention; Figure 4 This is a bottom view of the structure of the lifting and rotating mechanism of the present invention; Figure 5 It is a schematic diagram of the separation structure of the placement piece and the main shaft body of the present invention; Figure 6 This is a schematic diagram of the exploded structure of the lifting and rotating mechanism of the present invention; Figure 7 It is a schematic diagram of the internal structure of the protective shell of the present invention; Figure 8 It is a bottom view structural schematic diagram of the placement piece of the present invention.

[0016] In the figure: 1, bracket; 2, chemical vapor deposition furnace; 3, furnace door; 4, base; 5, mounting slot; 6, servo motor; 7, spindle body; 8, lifting plate; 9, slide slot; 10, slider; 11, connecting block; 12, protective shell 1; 13, electric push rod; 14, cylinder; 15, polygonal slot; 16, limit hole; 17, limit column; 18, epitaxial base; 19, fixed slot; 20, L-shaped block; 21, moving slot; 22, reciprocating screw rod; 23, coupling; 24 , transmission belt; 25, moving block; 26, protective shell two; 27, electrochemical sensor; 28, resistive semiconductor sensor; 29, thermal conductivity gas sensor; 30, circular magnet; 31, traction plate; 32, vent; 33, protective shell three; 34, exhaust fan; 35, connecting pipe; 36, connecting rod; 37, annular pipe; 38, through hole; 39, threaded groove; 40, limit block; 41, threaded rod; 42, fixed plate; 43, rotating column; 44, connecting plate. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] In a typical implementation of this application, please refer to Figures 1 to 8 As shown, a spindle lifting and rotating device used in a vapor deposition device comprises a bracket 1, a chemical vapor deposition furnace 2 is fixedly installed on the top surface of the bracket 1, a furnace door 3 is installed on the front side wall of the chemical vapor deposition furnace 2 through a connecting piece, and also comprises: a lifting and rotating mechanism, which is arranged inside the furnace door 3, and the lifting and rotating mechanism comprises: a base 4, a mounting groove 5 is provided on the top surface of the base 4, a servo motor 6 is fixedly installed inside the mounting groove 5, a spindle body 7 is rotatably connected to the top surface of the base 4, the cross-sectional shape of the spindle body 7 is a polygon, the bottom surface of the spindle body 7 is connected to the output shaft of the servo motor 6, a lifting plate 8 is slidably installed on the outer surface of the spindle body 7, a slide groove 9 is provided on the side wall of the base 4, a slider 10 is slidably connected inside the slide groove 9, a connecting block 11 is fixedly installed on the side wall of the slider 10, a protective shell 12 is fixedly installed on the top surface of the connecting block 11, an electric push rod 13 is fixedly installed inside the protective shell 12, and the output end of the electric push rod 13 is connected to the bottom surface of the lifting plate 8; The detection component is arranged on the base 4, and the detection component includes: an L-shaped block 20, the L-shaped block 20 is fixedly mounted on the bottom surface of the base 4, the side wall of the L-shaped block 20 is provided with a moving groove 21, the inner wall of the moving groove 21 is rotatably connected with a reciprocating screw 22, the outer surface of the reciprocating screw 22 and the main shaft body 7 are fixedly mounted with a coupling 23, a transmission belt 24 is arranged between the two couplings 23, the outer surface of the reciprocating screw 22 is threadedly connected with a moving block 25, and the moving block 25 slides in the moving groove 21; A placement component is disposed on the spindle body 7 . There are three groups of placement components, and the placement components are used to place wafer substrates.

[0019] Through the above features, the wafer substrate on the placement component can be rotated and lifted, so that it can be deposited with the mixed gas of methyltrichlorosilane and hydrogen and argon in the chemical vapor deposition furnace 2. Specifically, the placement component is sleeved on the outer surface of the spindle body 7. At this time, when the servo motor 6 is working, the spindle body 7 will rotate to rotate the placement component. When lifting is required, the electric push rod 13 in the protective shell 12 is lifted, so that the lifting plate 8 rises on the outer surface of the spindle body 7. The lifting plate 8 will contact the bottom surface of the placement component during the rising process, so that it rises synchronously; As a preferred implementation in this embodiment, please refer to Figure 2 to Figure 5 As shown, the placement component includes: a cylinder 14, which is arranged on the outer surface of the main shaft body 7, and a polygonal groove 15 is provided on the bottom surface of the cylinder 14, and the polygonal groove 15 has the same specification as the main shaft body 7, a plurality of limiting holes 16 are provided on the bottom surface of the cylinder 14, and a plurality of limiting columns 17 are provided on the top surface of the cylinder 14, and an extension base 18 is fixedly installed on the outer surface of the cylinder 14, and a plurality of fixing grooves 19 are provided on the top surface of the extension base 18.

[0020] Through the above features, the wafer substrate can be placed inside the chemical vapor deposition furnace 2. Specifically, the wafer substrate is placed in the fixing groove 19, and then the cylinder 14 is sleeved on the outer surface of the spindle body 7 through the polygonal groove 15.

[0021] As a preferred implementation in this embodiment, please refer to Figures 4 to 6 As shown, the detection component includes: an L-shaped block 20, which is fixedly mounted on the bottom surface of the base 4, and a moving groove 21 is opened on the side wall of the L-shaped block 20. The inner wall of the moving groove 21 is rotatably connected with a reciprocating screw 22. The outer surfaces of the reciprocating screw 22 and the main shaft body 7 are fixedly mounted with couplings 23, and a transmission belt 24 is arranged between the two couplings 23. The outer surface of the reciprocating screw 22 is threadedly connected with a moving block 25, and the moving block 25 slides in the moving groove 21. The detection component also includes: a protective shell 26, which is fixedly mounted on the side wall of the moving block 25, and an electrochemical sensor 27, a resistive semiconductor sensor 28 and a thermal conductivity gas sensor 29 are respectively fixedly mounted inside the protective shell 26. The sensing ends of the electrochemical sensor 27, the resistive semiconductor sensor 28 and the thermal conductivity gas sensor 29 penetrate the inner wall of the protective shell 26 and extend to the outside of the protective shell 26. The detection component also includes a traction member.

[0022] Through the above-mentioned features, the concentration of the surrounding mixed gas of methyltrichlorosilane and hydrogen and argon can be detected when the lifting and rotating mechanism is working. Specifically, when the main shaft body 7 rotates, the two couplings 23 will rotate synchronously through the transmission belt 24, and the reciprocating screw 22 will rotate in the moving groove 21. At this time, the moving block 25 threadedly connected to the reciprocating screw 22 will drive the protective shell 26 to rise and fall. At this time, the electrochemical sensor 27, the resistive semiconductor sensor 28 and the thermal conductivity gas sensor 29 in the protective shell 26 respectively detect the concentration of methyltrichlorosilane, the concentration of hydrogen and the concentration of argon, thereby detecting the concentration of the mixed gas on the three groups of placed components.

[0023] As a preferred implementation in this embodiment, please refer to Figure 4 , Figure 5 and Figure 7 As shown, the traction member includes: a circular magnet 30, which is sleeved on the outer surface of the main shaft body 7, three traction plates 31 are fixedly installed on the top surface of the circular magnet 30, and the side walls of the three traction plates 31 are each provided with a plurality of ventilating openings 32, and the side walls of the three traction plates 31 are each fixedly installed with a protective shell three 33, and the interiors of the three protective shells three 33 are each fixedly installed with an exhaust fan 34, and the side walls of the three protective shells three 33 are each provided with a connecting pipe 35, and the traction member also includes: three annular tubes 37, and the three annular tubes 37 are respectively installed on the outer walls of the three cylinders 14 through a plurality of connecting rods 36, and the bottom surfaces of the three annular tubes 37 are each provided with a plurality of through holes 38, and the other ends of the three connecting tubes 35 are respectively connected to the three annular tubes 37.

[0024] Through the above-mentioned features, when it is detected that the concentration of the mixed gas on the three groups of placed components is low, the exhaust fan 34 in the protective shell 33 starts working, and the mixed gas is injected into the annular tube 37 through the connecting tube 35 through the vent 32 and the exhaust fan 34, and then injected into the wafer substrate through the through hole 38 on the bottom surface of the annular tube 37.

[0025] As a preferred implementation in this embodiment, please refer to Figure 5 and Figure 7 As shown, a thread groove 39 is formed on the top surface of the main shaft body 7 , a limit block 40 is arranged above the main shaft body 7 , a threaded rod 41 is fixedly mounted on the bottom surface of the limit block 40 , and the threaded rod 41 cooperates with the thread groove 39 .

[0026] Through the above features, after the placement component is placed in the spindle body 7, the staff rotates the limit block 40 into the threaded groove 39 through the threaded rod 41, so that the limit block 40 limits the top surface of the spindle body 7 to prevent the placement component from separating from the spindle body 7 during the lifting and lowering process.

[0027] As a preferred implementation in this embodiment, please refer to Figures 1 to 8 As shown, the present invention also provides a method for using a spindle lifting and rotating device used in a vapor deposition device, which is applied to the spindle lifting and rotating device used in the above-mentioned vapor deposition device, and includes the following steps: S1: Ensure that the bracket 1 firmly supports the entire device, check whether the chemical vapor deposition furnace 2 is intact, whether the furnace door 3 can be opened and closed normally, confirm that the servo motor 6 on the base 4 has been correctly installed, and check its working status, check whether the spindle body 7 is firmly connected to the base 4, and whether the polygonal cross-sectional shape is intact, verify whether the lifting plate 8 can slide smoothly on the spindle body 7, and whether the electric push rod 13 can drive the lifting plate 8 to move up and down through the connecting block 11 and the slider 10, check whether the L-shaped block 20, the moving groove 21, the reciprocating screw 22, the coupling 23, and the transmission belt 24 detection component parts are installed correctly, verify whether the placement component is ready, and the wafer substrate can be stably installed on the spindle body 7; S2: Use the connector to open the furnace door 3 so that the wafer substrate can be placed in the placement assembly, and the wafer substrate is placed in the polygonal groove 15 of the cylinder 14, and it is ensured to be stably fixed by the limiting hole 16 and the limiting column 17, and the furnace door 3 is closed and locked with the connector to ensure the sealing during the vapor deposition process; S3: Start the servo motor 6, drive the spindle body 7 to rotate through the coupling 23 and the transmission belt 24, and use the electric push rod 13 to drive the lifting plate 8 to move up and down through the slider 10 and the connecting block 11 as needed to adjust the position of the wafer substrate in the chemical vapor deposition furnace 2; S4: starting the electrochemical sensor 27, the resistive semiconductor sensor 28 and the thermal conductivity gas sensor 29 in the detection assembly to monitor the concentration of the mixed gas in the reaction chamber in real time, and adjusting the gas flow and reaction conditions in the vapor deposition process according to the data fed back by the sensors to ensure that a uniform deposition layer is formed on the wafer substrate; S5: After the vapor deposition process is completed, the rotation of the servo motor 6 is stopped first, and the lifting plate 8 is lowered to the lowest position by using the electric push rod 13 to remove the wafer substrate; S6: Open the furnace door 3, take out the deposited wafer substrate, clean the residues in the chemical vapor deposition furnace 2 and the placement components, and prepare for the next use.

[0028] Working principle: When in use, the wafer substrate is placed in the fixing groove 19 of the placement component, and then the cylinder 14 is sleeved on the outer surface of the spindle body 7 through the polygonal groove 15, and the limit block 40 is rotated into the threaded groove 39 through the threaded rod 41 to limit the top surface of the spindle body 7 to prevent the placement component from being separated from the spindle body 7 during the lifting process. The furnace door 3 of the front side wall of the chemical vapor deposition furnace 2 is connected to the furnace body through a connecting piece, and two fixing plates 42 of the connecting piece are fixed on the side wall of the furnace body. The rotating column 43 is rotatably connected between the two fixing plates 42, and the connecting plate 44 connects the rotating column 43 and the furnace door 3 to realize the opening and closing of the furnace door 3; When the wafer substrate needs to be deposited, the servo motor 6 is started, and its output shaft drives the spindle body 7 to rotate, thereby rotating the placement assembly, so that the wafer substrate is evenly deposited by the mixed gas of methyltrichlorosilane and hydrogen and argon in the chemical vapor deposition furnace 2. If the height of the placement assembly needs to be adjusted, the electric push rod 13 in the protective shell 12 rises, pushing the lifting plate 8 to rise on the spindle body 7, and the lifting plate 8 contacts the bottom surface of the placement assembly to make it rise synchronously; During the rotation of the main shaft body 7, due to the action of the coupling 23 and the transmission belt 24, the reciprocating screw 22 will rotate in the moving groove 21 of the L-shaped block 20, driving the moving block 25 threadedly connected to the reciprocating screw 22 to rise and fall, so that the electrochemical sensor 27, the resistance semiconductor sensor 28 and the thermal conductivity gas sensor 29 in the protective shell 26 respectively detect the concentrations of methyltrichlorosilane, hydrogen and argon, thereby realizing the detection of the concentration of the mixed gas around the three groups of placed components; When it is detected that the concentration of the mixed gas on the three groups of placed components is low, the exhaust fan 34 in the protective shell 33 starts to work, sucking the mixed gas through the vent 32, injecting it into the annular tube 37 through the connecting tube 35, and then injecting it into the wafer substrate through the through hole 38 on the bottom of the annular tube 37 to ensure the deposition effect.

[0029] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A spindle lifting and rotating device for a vapor deposition device, comprising a bracket (1), a chemical vapor deposition furnace (2) being fixedly mounted on the top surface of the bracket (1), a furnace door (3) being mounted on the front side wall of the chemical vapor deposition furnace (2) via a connecting piece, characterized in that: Also includes: A lifting and rotating mechanism, the lifting and rotating mechanism is arranged inside the furnace door (3), and the lifting and rotating mechanism comprises: A base (4), wherein a mounting groove (5) is provided on the top surface of the base (4), a servo motor (6) is fixedly mounted inside the mounting groove (5), and a main shaft body (7) is rotatably connected to the top surface of the base (4); A detection component, the detection component is arranged on the base (4), and the detection component comprises: an L-shaped block (20), the L-shaped block (20) is fixedly mounted on the bottom surface of the base (4), a moving groove (21) is formed on the side wall of the L-shaped block (20), a reciprocating screw rod (22) is rotatably connected to the inner wall of the moving groove (21), a coupling (23) is fixedly mounted on the outer surface of the reciprocating screw rod (22) and the main shaft body (7), a transmission belt (24) is arranged between the two couplings (23), a moving block (25) is threadedly connected to the outer surface of the reciprocating screw rod (22), and the moving block (25) slides in the moving groove (21); A placement component is arranged on the main shaft body (7), and three groups of the placement components are arranged.

2. The spindle lifting and rotating device used in a vapor deposition device according to claim 1, characterized in that: The placement components include: A cylinder (14), wherein the cylinder (14) is arranged on the outer surface of the main shaft body (7), the bottom surface of the cylinder (14) is provided with a polygonal groove (15), the polygonal groove (15) has the same specifications as the main shaft body (7), the bottom surface of the cylinder (14) is provided with a plurality of limiting holes (16), the top surface of the cylinder (14) is provided with a plurality of limiting columns (17), the outer surface of the cylinder (14) is fixedly mounted with an epitaxial base (18), and the top surface of the epitaxial base (18) is provided with a plurality of fixing grooves (19).

3. The spindle lifting and rotating device used in a vapor deposition device according to claim 1, characterized in that: The detection components also include: A second protective shell (26), wherein the second protective shell (26) is fixedly mounted on the side wall of the moving block (25), and an electrochemical sensor (27), a resistive semiconductor sensor (28) and a thermal conductivity gas sensor (29) are respectively fixedly mounted inside the second protective shell (26), and the sensing ends of the electrochemical sensor (27), the resistive semiconductor sensor (28) and the thermal conductivity gas sensor (29) penetrate the inner wall of the second protective shell (26) and extend to the outside of the second protective shell (26), and the detection component also includes a traction member.

4. The spindle lifting and rotating device used in a vapor deposition device according to claim 3, characterized in that: The traction parts include: A circular magnet (30), wherein the circular magnet (30) is sleeved on the outer surface of the main shaft body (7), three traction plates (31) are fixedly mounted on the top surface of the circular magnet (30), the side walls of the three traction plates (31) are each provided with a plurality of ventilation holes (32), the side walls of the three traction plates (31) are each fixedly mounted with a protective shell three (33), the interiors of the three protective shells three (33) are each fixedly mounted with an exhaust fan (34), and the side walls of the three protective shells three (33) are each provided with a connecting pipe (35).

5. The spindle lifting and rotating device used in a vapor deposition device according to claim 4, characterized in that: The traction parts also include: Three annular tubes (37), each of the three annular tubes (37) being mounted on the outer walls of three cylinders (14) via a plurality of connecting rods (36), each of the three annular tubes (37) having a plurality of through holes (38) formed on its bottom surface, and the other ends of the three connecting tubes (35) being connected to the three annular tubes (37) respectively.

6. The spindle lifting and rotating device used in a vapor deposition device according to claim 1, characterized in that: A thread groove (39) is formed on the top surface of the main shaft body (7), a limit block (40) is arranged above the main shaft body (7), a threaded rod (41) is fixedly mounted on the bottom surface of the limit block (40), and the threaded rod (41) cooperates with the thread groove (39).

7. The spindle lifting and rotating device used in a vapor deposition device according to claim 1, characterized in that: Connectors include: Two fixed plates (42), the two fixed plates (42) are distributed up and down, and are fixedly mounted on the side wall of the chemical vapor deposition furnace (2), a rotating column (43) is rotatably connected between the two fixed plates (42), and a connecting plate (44) is fixedly mounted on the outer surface of the two rotating columns (43), and the side wall of the connecting plate (44) is connected to the front side wall of the furnace door (3).

8. The spindle lifting and rotating device used in a vapor deposition device according to claim 1, characterized in that: The cross-sectional shape of the spindle body (7) is polygonal. The bottom surface of the spindle body (7) is connected to the output shaft of the servo motor (6). A lifting plate (8) is slidably mounted on the outer surface of the spindle body (7). A slide groove (9) is provided on the side wall of the base (4). A slider (10) is slidably connected inside the slide groove (9). A connecting block (11) is fixedly mounted on the side wall of the slider (10). A protective shell (12) is fixedly mounted on the top surface of the connecting block (11). An electric push rod (13) is fixedly mounted inside the protective shell (12). The output end of the electric push rod (13) is connected to the bottom surface of the lifting plate (8).

9. A method for using a spindle lifting and rotating device used in a vapor deposition device, applied to a spindle lifting and rotating device used in a vapor deposition device according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1: Ensure that the support (1) firmly supports the entire device, check whether the chemical vapor deposition furnace (2) is intact and whether the furnace door (3) can be opened and closed normally, confirm that the servo motor (6) on the base (4) has been correctly installed and check its working condition, check whether the spindle body (7) is firmly connected to the base (4) and whether the polygonal cross-sectional shape is intact, verify whether the lifting plate (8) can slide smoothly on the spindle body (7), and whether the electric push rod (13) can drive the lifting plate (8) to move up and down through the connecting block (11) and the slider (10), check whether the L-shaped block (20), the moving groove (21), the reciprocating screw (22), the coupling (23), and the transmission belt (24) detection component parts are correctly installed, verify whether the placement component is ready, and can stably install the wafer substrate on the spindle body (7); S2: using a connecting piece to open the furnace door (3) so as to place the wafer substrate into the placement assembly, placing the wafer substrate into the polygonal groove (15) of the cylinder (14), and ensuring that it is stably fixed through the limiting hole (16) and the limiting column (17), closing the furnace door (3), and locking it using a connecting piece to ensure sealing during the vapor deposition process; S3: starting the servo motor (6) to drive the main shaft body (7) to rotate through the coupling (23) and the transmission belt (24), and using the electric push rod (13) to drive the lifting plate (8) to move up and down through the slider (10) and the connecting block (11) as needed to adjust the position of the wafer substrate in the chemical vapor deposition furnace (2); S4: starting the electrochemical sensor (27), the resistive semiconductor sensor (28) and the thermal conductivity gas sensor (29) in the detection component to monitor the concentration of the mixed gas in the reaction chamber in real time, and adjusting the gas flow rate and reaction conditions in the vapor deposition process according to the data fed back by the sensors to ensure that a uniform deposition layer is formed on the wafer substrate; S5: After the vapor deposition process is completed, the rotation of the servo motor (6) is stopped, and the lifting plate (8) is lowered to the lowest position using the electric push rod (13) so as to remove the wafer substrate; S6: Open the furnace door (3), take out the deposited wafer substrate, clean the chemical vapor deposition furnace (2) and the residues in the placement components, and prepare for the next use.

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