Flash memory weak block screening method and device, electronic equipment and storage medium

Abstract

The invention provides a flash memory weak block screening method and device, electronic equipment and a storage medium, and relates to the technical field of flash memories. The flash memory weak block screening method comprises the following steps: performing write operation on a current block in a flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block; and based on the plurality of threshold voltage distribution states corresponding to each page, respectively calculating a threshold voltage difference value between every two adjacent threshold voltage distribution states, and adding the plurality of threshold voltage difference values to obtain a threshold voltage distribution detection value of each page. And determining whether the current block is a weak block based on the threshold voltage distribution detection value of each page. The weak block screening method according to the plurality of threshold voltage distribution states corresponding to each page in the current block is not easily influenced by the temperature and the default voltage reading position, the weak block screening accuracy can be greatly improved, and thus the product quality is improved.

Description

Technical Field

[0001] The present application relates to the field of flash memory technology, and in particular to a flash memory weak block screening method, device, electronic device and storage medium. Background Art

[0002] Flash memory particles are composed of multiple blocks. Due to the process flow and uniformity, there are differences in reliability between blocks. Some blocks are broken when they leave the factory, which are called factory bad blocks (FBB). Such blocks cannot be used by users. Some blocks are good blocks when they leave the factory, but they will break during use, which are called growing bad blocks (GBB). Growing bad blocks may cause user data loss and affect the user experience. Too many growing bad blocks may even affect the normal operation of the disk, causing the disk to become read-only mode and unusable. Therefore, module manufacturers need to identify these weak blocks (Weak Block) that may become growing bad blocks as early as possible during the production test process to improve product quality.

[0003] At present, the common method for weak block screening is to obtain the maximum bit error count (FBC) threshold of a single block through the default read voltage for card control. However, this method is easily affected by temperature and the default read voltage position, and the intercepted weak blocks may not affect the use in actual scenarios.

[0004] In summary, how to accurately screen out weak blocks in flash memory particles is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] The purpose of the present application is to provide a flash memory weak block screening method, device, electronic device and storage medium to accurately screen out weak blocks in flash memory particles.

[0006] In order to achieve the above purpose, the technical solution adopted in this application is as follows: In a first aspect, the present application provides a flash memory weak block screening method, comprising: Performing a write operation on a current block in a flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block; Based on the multiple threshold voltage distribution states corresponding to each of the pages, respectively calculating the threshold voltage difference between each two adjacent threshold voltage distribution states, and adding the multiple threshold voltage differences to obtain a threshold voltage distribution detection value for each of the pages; It is determined whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages.

[0007] Furthermore, before the step of performing a write operation on the current block in the flash memory particle, the method further includes: performing an erase operation on the current block.

[0008] Further, based on the multiple threshold voltage distribution states corresponding to each of the pages, the threshold voltage difference between each two adjacent threshold voltage distribution states is calculated, and the multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value of each of the pages, including: Based on the multiple threshold voltage distribution states corresponding to each of the pages, a threshold voltage distribution graph corresponding to each of the pages is drawn respectively; wherein the abscissa of the threshold voltage distribution graph is the threshold voltage, and the ordinate is the number of storage cells; Based on the threshold voltage distribution diagram corresponding to each of the pages, the threshold voltage difference between each two adjacent threshold voltage distribution states under a preset storage cell quantity threshold is calculated respectively, and multiple threshold voltage differences are added to obtain a threshold voltage distribution detection value of each of the pages.

[0009] Further, the step of judging whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages includes: Determining whether the threshold voltage distribution detection value of each of the pages in the current block is greater than or equal to a preset threshold; If yes, mark the current block as a normal block; If not, the current block is marked as a weak block.

[0010] Furthermore, the preset storage unit quantity threshold and the preset threshold are both determined by the grade of the flash memory particles.

[0011] Further, after the step of judging whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages, the method further includes: A write operation is performed on the next block in the flash memory particle and weak block screening is performed until all blocks in the flash memory particle are screened.

[0012] Furthermore, before the step of performing a write operation on the current block in the flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block, the method further includes: Writing the aging firmware into any block in the flash memory particle; The flash memory particles are subjected to multiple rounds of full disk erasing and writing operations.

[0013] In a second aspect, the present application also provides a flash memory weak block screening device, comprising: An acquisition module, used for performing a write operation on a current block in a flash memory particle to respectively acquire a plurality of threshold voltage distribution states corresponding to each page in the current block; A calculation module, configured to calculate a threshold voltage difference between each two adjacent threshold voltage distribution states based on the multiple threshold voltage distribution states corresponding to each of the pages, and add the multiple threshold voltage differences to obtain a threshold voltage distribution detection value of each of the pages; A judging module is used to judge whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages.

[0014] In a third aspect, the present application further provides an electronic device, wherein the memory stores a computer program, and the processor is used to execute the computer program to implement the flash memory weak block screening method as described in any one of the first aspects above.

[0015] In a fourth aspect, the present application further provides a storage medium having a computer program stored thereon, and when the computer program is executed, the flash memory weak block screening method as described in any one of the above-mentioned first aspects is implemented.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The present application provides a flash memory weak block screening method, device, electronic device and storage medium. The flash memory weak block screening method includes: performing a write operation on the current block in the flash memory particle to obtain multiple threshold voltage distribution states corresponding to each page in the current block respectively. Based on the multiple threshold voltage distribution states corresponding to each page, the threshold voltage difference between each two adjacent threshold voltage distribution states is calculated respectively, and the multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value of each page. Based on the threshold voltage distribution detection value of each page, it is judged whether the current block is a weak block. Compared with the prior art, the method of performing weak block screening according to the multiple threshold voltage distribution states corresponding to each page in the current block is not easily affected by temperature and the default read voltage position, and can greatly improve the accuracy of weak block screening, thereby improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians of the art without making creative work are within the scope of protection of the present application.

[0018] Figure 1 One of the flow charts of a flash memory weak block screening method provided in an embodiment of the present application; Figure 2 A second flow chart of a flash memory weak block screening method provided in an embodiment of the present application; Figure 3 A TLC type threshold voltage distribution diagram provided in an embodiment of the present application; Figure 4 A third flow chart of a flash memory weak block screening method provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of a flash memory weak block screening device provided in an embodiment of the present application.

[0019] Reference numerals: 100 - flash memory weak block screening device; 110 - acquisition module; 120 - calculation module; 130 - judgment module. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0021] In the description of this application, it should be noted that relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The term "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium.

[0022] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0023] In the prior art, the method of obtaining the maximum FBC threshold of a single block by default read voltage for weak block screening is easily affected by temperature and the position of the default read voltage, and the intercepted weak blocks may not affect the use in actual scenarios, that is, the recognition rate of weak blocks by this method is low. Therefore, how to accurately screen out weak blocks in flash memory particles is a technical problem that needs to be solved urgently by those skilled in the art.

[0024] In order to solve the above technical problems, the embodiment of the present application provides a flash memory weak block screening method based on a threshold voltage (Voltage threshold, V th ) distribution method can more accurately identify weak blocks in flash memory particles and improve product quality.

[0025] See also Figure 1 , Figure 1 A schematic diagram of a process for screening weak blocks of a flash memory provided in an embodiment of the present application, the method comprising: Step S30: performing a write operation on the current block in the flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block.

[0026] In flash memory, data is usually organized into the following levels: NAND Flash Chip: A NAND Flash chip is a physical chip or component composed of multiple blocks.

[0027] Block: A block is the basic unit of erase operation. A block contains multiple pages.

[0028] Page: A page is the basic unit of read and write operations. A page contains multiple storage units.

[0029] Cell: A cell is the basic unit for storing data. A cell can store one or more bits of data, depending on its type.

[0030] Each memory cell has a specific threshold voltage. When a write operation is performed, if the voltage applied to the gate of the memory cell exceeds this threshold voltage, the memory cell will change from a non-conductive state to a conductive state, so that the information stored in it can be read. Different data states correspond to different threshold voltage distribution states.

[0031] In the embodiment of the present application, when a write operation is performed on the current block in the flash memory particle, since a block contains multiple pages, each page will present a distribution of threshold voltages after data is written.

[0032] In order to make the distribution of the threshold voltage more accurate, before the step S30 of performing a write operation on the current block in the flash memory particle, the method further includes: performing an erase operation on the current block to reset the current block to an initial state.

[0033] That is to say, after performing an erase operation on the current block, multiple threshold voltage distribution states corresponding to each page in the current block can be obtained respectively, wherein the number of threshold voltage distribution states corresponding to each page is related to the type of flash memory particles.

[0034] In the process of improving storage density through logical methods, flash memory particles of types such as SLC (Single Level Cell), MLC (Multiple Level Cell), TLC (Triple Level Cell), and QLC (Quad Level Cell) have appeared one after another.

[0035] Specifically, a flash memory particle in which each storage unit stores 1 bit of data is called an SLC, and the threshold voltage distribution of the SLC presents two threshold voltage distribution states.

[0036] Flash memory particles in which each storage cell stores 2 bits of data are called MLC, and the threshold voltage distribution of MLC presents 4 threshold voltage distribution states.

[0037] Flash memory particles that store 3 bits of data in each storage cell are called TLC, and the threshold voltage distribution of TLC presents 8 threshold voltage distribution states.

[0038] Flash memory particles that store 4 bits of data in each storage unit are called QLC, and the threshold voltage distribution of QLC presents 16 threshold voltage distribution states.

[0039] Step S40: based on the multiple threshold voltage distribution states corresponding to each page, respectively calculating the threshold voltage difference between every two adjacent threshold voltage distribution states, and adding the multiple threshold voltage differences to obtain the threshold voltage distribution detection value of each page.

[0040] In order to more accurately screen out weak blocks in flash memory particles, it is necessary to detect each page in the current block separately, so as to prepare for subsequent weak block judgment.

[0041] Specifically, see Figure 2 In an embodiment of the present application, based on multiple threshold voltage distribution states corresponding to each page, the threshold voltage difference between each two adjacent threshold voltage distribution states is calculated respectively, and the multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value of each page. Step S40 includes sub-steps S41 and S42.

[0042] Step S41: based on a plurality of threshold voltage distribution states corresponding to each page, respectively draw a threshold voltage distribution graph corresponding to each page.

[0043] A threshold voltage distribution graph is used to show the distribution of the threshold voltage of the memory cells in a page. Different data states correspond to different threshold voltage ranges, and these ranges are presented as multiple threshold voltage distribution states similar to normal distribution on the threshold voltage distribution graph. The horizontal axis of the threshold voltage distribution graph is the threshold voltage, and the vertical axis is the number of memory cells.

[0044] In order to better understand the technical solution of this embodiment, TLC flash memory particles are used as an example for explanation below.

[0045] See also Figure 3 , Figure 3 is a TLC type threshold voltage distribution diagram, the horizontal axis of which is the threshold voltage V th , the horizontal axis is the number of storage cells Cell bit. Since the TLC type storage cell can store 3 bits of data (i.e. 000, 001, 010, 011, 100, 101, 110, 111), the threshold voltage distribution of the TLC type storage cell presents 8 threshold voltage distribution states (i.e. E 0 , P 1 , P 2 , P 3 , P 4 , P 5 , P 6 , P 7 ). The number of storage cells in each threshold voltage distribution state is evenly distributed and presents a normal distribution.

[0046] Step S42: Based on the threshold voltage distribution map corresponding to each page, the threshold voltage difference between each two adjacent threshold voltage distribution states under the preset storage cell quantity threshold is calculated respectively, and multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value of each page.

[0047] In order to read data correctly, it is necessary to ensure that the threshold voltage of each threshold voltage distribution state does not overlap with the read reference voltage, otherwise it will lead to misjudgment. That is, the wider the distance between each two adjacent threshold voltage distribution states in a threshold voltage distribution diagram, the better, which means that more accidental loss or injection of electrons is allowed, thereby improving the fault tolerance of the flash memory.

[0048] Take TLC as an example. Figure 3 As shown, according to the threshold voltage distribution diagram of a page, the preset storage cell number threshold Cell can be calculated. th Under this condition, the threshold voltage difference between each two adjacent threshold voltage distribution states is ΔV th0 , ΔV th1 , ΔV th2 , ΔV th3 , ΔV th4 , ΔV th5 , ΔV th6 The seven threshold voltage differences are added together to obtain the threshold voltage distribution detection value of a page. .

[0049] Similarly, the threshold voltage distribution detection value Sum_ΔV of all pages in the current block can be obtained according to the above method. th .

[0050] Step S50: judging whether the current block is a weak block based on the threshold voltage distribution detection value of each page.

[0051] Please refer again Figure 2 In a feasible implementation manner, step S50 of determining whether the current block is a weak block based on the threshold voltage distribution detection value of each page includes sub-steps S51, S52 and S53.

[0052] Step S51: determining whether the threshold voltage distribution detection value of each page in the current block is greater than or equal to a preset threshold.

[0053] Step S52: If yes, mark the current block as a normal block.

[0054] Step S53: If not, mark the current block as a weak block.

[0055] In the embodiment of the present application, after obtaining the threshold voltage distribution detection value Sum_ΔV of all pages in the current block, th After that, it is necessary to determine the threshold voltage distribution detection value Sum_ΔV of all pages. th Are they both greater than or equal to the preset threshold Limit_ΔV? th , as long as there is a page threshold voltage distribution detection value Sum_ΔV th Less than the preset threshold Limit_ΔV th, it means that the block is a weak block.

[0056] It should be noted that the preset storage cell number threshold Cell th and preset threshold Limit_ΔV th All of them are determined by the grade of flash memory particles.

[0057] For example, through small batch sample testing, flash memory particles can be graded according to different product specifications (for example: consumer, industrial, and automotive). The preset storage cell number threshold Cell is defined according to different flash memory particle grades th and preset threshold Limit_ΔV th The specific value of makes the threshold voltage distribution detection value Sum_ΔV th Meet the usage requirements.

[0058] Depend on Figure 3 As shown in the threshold voltage distribution diagram, it can be seen that at the same preset storage cell number threshold Cell th Under the standard (i.e. the vertical axis is consistent), the threshold voltage distribution detection value Sum_ΔV th The larger it is, the wider the distance between multiple threshold voltage distribution states is, allowing more accidental loss or injection of electrons, improving the fault tolerance of flash memory particles, and the better the quality of the block.

[0059] In the embodiments of this application, please refer to Figure 4 After step S50 of determining whether the current block is a weak block based on the threshold voltage distribution detection value of each page, the flash memory weak block screening method further includes the following steps: Step S60: performing a write operation on the next block in the flash memory particle and performing weak block screening until all blocks in the flash memory particle are screened.

[0060] Similarly, after performing a write operation on the next block, multiple threshold voltage distribution states corresponding to each page in the block are obtained respectively, and based on the multiple threshold voltage distribution states corresponding to each page, a threshold voltage distribution graph corresponding to each page is drawn respectively. Based on the threshold voltage distribution graph corresponding to each page, the threshold voltage distribution graph corresponding to the preset storage cell number threshold Cell is calculated respectively. th The threshold voltage difference between each two adjacent threshold voltage distribution states is calculated, and multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value Sum_ΔV of each page. th If the threshold voltage distribution detection value Sum_ΔV of each page th Both are greater than or equal to the preset threshold Limit_ΔV th , it means that the block is normal and the block is marked as a normal block. Otherwise, the block is marked as a weak block.

[0061] Through the above method, each block in the flash memory particle can be screened for weak blocks more accurately in turn, thereby improving product quality.

[0062] In addition, in order to further improve the accuracy of weak block screening, as an optional implementation, before the step S30 of performing a write operation on the current block in the flash memory particle to respectively obtain multiple threshold voltage distribution states corresponding to each page in the current block, the following steps are also included: Step S10: writing the aged firmware into any block in the flash memory particle.

[0063] Before weak block screening, initialization is required, that is, writing aging firmware in any block (for example, Block 0) in the flash memory particle to perform aging test. This test accelerates the exposure of potential hardware defects by repeatedly writing and erasing data on the device, so as to identify bad blocks as early as possible and ensure the reliability of the flash memory in long-term use. In addition, in order to make the test environment close to the actual use conditions, the test can be performed at room temperature.

[0064] Step S20: performing multiple rounds of full disk erase and write operations on the flash memory particles.

[0065] Since blocks may become unstable during the early erases, in order to make the block data more stable and avoid misjudgment, as an optional implementation method, multiple rounds of full disk erase operations can be performed on all blocks in the flash memory particles at a specified temperature (high or low temperature), and then weak block screening is performed on each block in the flash memory particles in turn, thereby improving the accuracy of weak block screening.

[0066] Also, see Figure 5 The embodiment of the present application further provides a flash memory weak block screening device 100, the flash memory weak block screening device comprising: The acquisition module 110 is used to perform a write operation on a current block in the flash memory particle to respectively acquire a plurality of threshold voltage distribution states corresponding to each page in the current block.

[0067] The calculation module 120 is used to calculate the threshold voltage difference between each two adjacent threshold voltage distribution states based on the multiple threshold voltage distribution states corresponding to each page, and add the multiple threshold voltage differences to obtain the threshold voltage distribution detection value of each page.

[0068] The judgment module 130 is used to judge whether the current block is a weak block based on the threshold voltage distribution detection value of each page.

[0069] Optionally, an embodiment of the present application further provides an electronic device, including a processor and a memory, wherein the memory stores a computer program, and the processor is used to execute the computer program to implement the flash memory weak block screening method as described in any of the aforementioned embodiments.

[0070] Optionally, an embodiment of the present application further provides a storage medium, on which a computer program is stored. When the computer program is executed, the flash memory weak block screening method as described in any of the above-mentioned implementation methods is implemented.

[0071] In summary, the embodiments of the present application provide a flash memory weak block screening method, device, electronic device and storage medium. The flash memory weak block screening method includes: performing a write operation on the current block in the flash memory particle to respectively obtain multiple threshold voltage distribution states corresponding to each page in the current block. Based on the multiple threshold voltage distribution states corresponding to each page, the threshold voltage difference between each two adjacent threshold voltage distribution states is calculated respectively, and the multiple threshold voltage differences are added to obtain the threshold voltage distribution detection value of each page. Based on the threshold voltage distribution detection value of each page, it is judged whether the current block is a weak block. Compared with the prior art, the method of performing weak block screening according to the multiple threshold voltage distribution states corresponding to each page in a block is not easily affected by temperature and the default read voltage position, and can greatly improve the accuracy of weak block screening, thereby improving product quality.

[0072] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to the multiple embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of a code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or the flowchart, and the combination of boxes in the block diagram and / or the flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0073] In addition, each functional module in each embodiment of the present application can be integrated together to form an independent part, or each module can exist separately, or two or more modules can be integrated to form an independent part. If the function is implemented in the form of a software functional module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or the part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a disk or an optical disk.

[0074] The above are only various implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application.

Claims

1. A flash memory weak block screening method, characterized in that: include: Performing a write operation on a current block in a flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block; Based on the multiple threshold voltage distribution states corresponding to each of the pages, respectively calculating the threshold voltage difference between each two adjacent threshold voltage distribution states, and adding the multiple threshold voltage differences to obtain a threshold voltage distribution detection value for each of the pages; It is determined whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages.

2. The flash memory weak block screening method according to claim 1, characterized in that: Before the step of performing a write operation on the current block in the flash memory particle, the method further includes: performing an erase operation on the current block.

3. The flash memory weak block screening method according to claim 1, characterized in that: The step of respectively calculating the threshold voltage difference between each two adjacent threshold voltage distribution states based on the multiple threshold voltage distribution states corresponding to each of the pages, and adding the multiple threshold voltage differences to obtain the threshold voltage distribution detection value of each of the pages comprises: Based on the multiple threshold voltage distribution states corresponding to each of the pages, a threshold voltage distribution graph corresponding to each of the pages is drawn respectively; wherein the abscissa of the threshold voltage distribution graph is the threshold voltage, and the ordinate is the number of storage cells; Based on the threshold voltage distribution diagram corresponding to each of the pages, the threshold voltage difference between each two adjacent threshold voltage distribution states under a preset storage cell quantity threshold is calculated respectively, and multiple threshold voltage differences are added to obtain a threshold voltage distribution detection value of each of the pages.

4. The flash memory weak block screening method according to claim 3, characterized in that: The step of judging whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages comprises: Determining whether the threshold voltage distribution detection value of each of the pages in the current block is greater than or equal to a preset threshold; If yes, mark the current block as a normal block; If not, the current block is marked as a weak block.

5. The flash memory weak block screening method according to claim 4, characterized in that: The preset storage unit quantity threshold and the preset threshold are both determined by the grade of the flash memory particles.

6. The flash memory weak block screening method according to claim 1, characterized in that: After the step of judging whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages, the method further includes: A write operation is performed on the next block in the flash memory particle and weak block screening is performed until all blocks in the flash memory particle are screened.

7. The flash memory weak block screening method according to claim 1, characterized in that: Before performing a write operation on a current block in a flash memory particle to respectively obtain a plurality of threshold voltage distribution states corresponding to each page in the current block, the method further includes: Writing the aging firmware into any block in the flash memory particle; The flash memory particles are subjected to multiple rounds of full disk erasing and writing operations.

8. A flash memory weak block screening device, characterized in that: include: An acquisition module, used for performing a write operation on a current block in a flash memory particle to respectively acquire a plurality of threshold voltage distribution states corresponding to each page in the current block; A calculation module, configured to calculate a threshold voltage difference between each two adjacent threshold voltage distribution states based on the multiple threshold voltage distribution states corresponding to each of the pages, and add the multiple threshold voltage differences to obtain a threshold voltage distribution detection value of each of the pages; A judging module is used to judge whether the current block is a weak block based on the threshold voltage distribution detection value of each of the pages.

9. An electronic device, characterized in that: The method comprises a processor and a memory, wherein the memory stores a computer program, and the processor is used to execute the computer program to implement the flash memory weak block screening method according to any one of claims 1 to 7.

10. A storage medium, characterized in that: The storage medium stores a computer program, and when the computer program is executed, the flash memory weak block screening method according to any one of claims 1 to 7 is implemented.

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