Method for detaching substrate, method for polishing substrate, substrate polishing apparatus, substrate processing apparatus, control apparatus, control method, and control program

Abstract

The present invention provides a method for detaching a substrate, a method for polishing a substrate, a substrate polishing apparatus, a substrate processing apparatus, a control apparatus, a control method, and a control program for detaching a substrate attached to a first surface of an elastic film of a substrate holding apparatus of the substrate polishing apparatus. A plurality of concentric pressure chambers are formed between a top ring main body of the substrate holding device and the second surface of the elastic film. The method includes a first step in which a fixed amount of gas is supplied to two or more of the plurality of pressure chambers to pressurize the elastic film, and a second step in which the plurality of pressure chambers are sequentially decompressed from the outside pressure chamber.

Description

Technical Field

[0001] The present invention relates to a method for detaching a substrate, a method for polishing a substrate, a substrate polishing apparatus, a substrate processing apparatus, a control apparatus, a control method, and a control program. Background Art

[0002] In a Chemical Mechanical Polishing (CMP) apparatus, while supplying a polishing liquid to a polishing pad on a rotating polishing table, a substrate is rotated by a polishing head and pressed against the polishing pad to perform polishing. The substrate is held by a thin film (elastic film) provided in the polishing head, and the substrate is pressed against the polishing pad by supplying a pressurized fluid to a pressure chamber of the thin film. When the polishing of the substrate is completed, the polishing head releases the holding of the substrate by the thin film, detaches (releases) the substrate, and delivers it to a transfer device. As such a CMP apparatus, for example, Patent Document 1 is known.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2020-199623 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] An object of the present invention is to detach a substrate from an elastic film.

[0008] Technical Means for Solving the Technical Problem

[0009] As an example, the following solutions are provided. [1]

[0011] A method for detaching a substrate, wherein the substrate is adsorbed on a first surface of an elastic film provided in a substrate holding device of a substrate polishing apparatus, and

[0012] a plurality of concentric pressure chambers are formed between a top ring body provided in the substrate holding device and a second surface of the elastic film,

[0013] the method includes a first step and a second step,

[0014] the first step supplies a fixed amount of gas to two or more of the plurality of pressure chambers to pressurize the elastic film,

[0015] the second step sequentially depressurizes the plurality of pressure chambers starting from an outer pressure chamber. [2]

[0017] In the method for detaching a substrate described in [1], none of the two or more pressure chambers is the outermost pressure chamber. [3]

[0019] In the method for detaching a substrate described in [2], while supplying a fixed amount of gas to the two or more pressure chambers in the first step, the outermost pressure chamber is depressurized in the second step. [4]

[0021] In the method for detaching a substrate described in any one of [1] to [3], in the first step, a fixed amount of gas is supplied from a separate fixed - amount gas supply device to the two or more pressure chambers. [5]

[0023] In the method for detaching a substrate described in any one of [1] to [4], the first step includes opening a first valve provided between each of the two or more pressure chambers and the fixed - amount gas supply device.

[0024] The second step includes opening a second valve provided between each of the plurality of pressure chambers and the pressure adjustment device.

[0025] In the second step, when the two or more pressure chambers are depressurized respectively, first the first valve is closed, and then the second valve is opened. [6]

[0027] In the method for detaching a substrate described in any one of [1] to [5], in the first step, a fixed amount of gas is supplied from a chamber to the two or more pressure chambers.

[0028] The method includes a step of generating a negative pressure in the chamber between the first step and the second step.

[0029] In the second step, for the two or more pressure chambers, depressurization is performed by connecting the chamber to the two or more pressure chambers. [7]

[0031] In the method for detaching a substrate described in any one of [1] to [6], a third step is included. In the second step, when the substrate does not detach even if a certain pressure chamber is depressurized, in this third step, a fixed amount of gas is supplied to one or more of the two or more pressure chambers. [8]

[0033] A method for grinding a substrate, using a substrate holding device having a top ring body and an elastic film, wherein,

[0034] The first surface of the elastic film can adsorb the substrate.

[0035] A plurality of concentric pressure chambers are formed between the top ring body and the second surface of the elastic film.

[0036] The method includes:

[0037] A first step, in which, in a state where the adsorbed surface of the substrate is in contact with the first surface of the elastic film, the substrate is adsorbed to the first surface of the elastic film by decompressing at least one of the plurality of pressure chambers.

[0038] A second step, in which the ground surface of the substrate is brought into contact with a grinding member, and while pressurizing at least one of the plurality of pressure chambers, the ground surface of the substrate is ground.

[0039] A third step, in which the ground surface of the substrate is separated from the grinding member, and a fixed amount of gas is supplied to two or more of the plurality of pressure chambers to pressurize the elastic film; and

[0040] A fourth step, in which the plurality of pressure chambers are decompressed in sequence starting from the outermost pressure chamber, so that the substrate is detached from the first surface of the elastic film. [9]

[0042] In the method for grinding a substrate described in [8], in the second step, the pressure adjustment device pressurizes at least one of the plurality of pressure chambers with a first pressure.

[0043] In the third step, the elastic film is pressurized with a second pressure lower than the first pressure.

[10]

[0045] In the method for grinding a substrate described in [8] or [9], in the first step, the pressure adjustment device decompresses at least one of the plurality of pressure chambers.

[0046] In the third step, a fixed amount of gas is supplied from the chamber to the two or more pressure chambers.

[0047] An operation of generating a negative pressure in the chamber is included between the third step and the fourth step.

[0048] In the fourth step, for the two or more pressure chambers, decompression is performed by connecting the chamber to the two or more pressure chambers.

[0049] The burden imposed on the substrate by the decompression in the fourth step is smaller than the burden imposed on the substrate by the decompression in the first step.

[11]

[0051] A substrate grinding device, comprising:

[0052] A top ring body;

[0053] An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of concentric pressure chambers between the elastic film and the top ring body;

[0054] A grinding member that grinds the adsorbed substrate;

[0055] A metering gas supply device that can supply metered gas to two or more of the plurality of pressure chambers;

[0056] A first switching member that switches whether to connect the metering gas supply device to the two or more pressure chambers respectively;

[0057] A pressure adjustment device that can independently control the pressure of the plurality of pressure chambers;

[0058] A second switching member that switches whether to connect the pressure adjustment device to the plurality of pressure chambers respectively; and

[0059] A control device that controls the metering gas supply device, the first switching member, the pressure adjustment device, and the second switching member in order to detach the substrate adsorbed on the first surface of the elastic film, so that the metering gas supply device supplies metered gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in sequence starting from the outermost pressure chamber.

[12]

[0061] In the substrate grinding device described in

[11] , the metering gas supply device has:

[0062] A cylinder; and

[0063] A piston that divides the cylinder into an upper space and a lower space,

[0064] By moving the piston downward, the metered gas in the lower space of the cylinder is supplied.

[13]

[0066] In the substrate grinding device described in

[11] , the metering gas supply device has a constant volume chamber that is pressurized by the pressure adjustment device.

[14]

[0068] A substrate processing device, characterized in that it comprises:

[0069] The substrate grinding device according to any one of

[11] to

[13] ;

[0070] A substrate cleaning device that cleans the substrate ground by the substrate grinding device; and

[0071] A substrate drying device that dries the substrate cleaned by the substrate cleaning device.

[15]

[0073] A control device that controls a substrate grinding device, the substrate grinding device comprising:

[0074] A top ring body;

[0075] An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of pressure chambers concentrically with the top ring body;

[0076] A grinding member that grinds the adsorbed substrate;

[0077] A metering gas supply device that can supply metered gas to two or more of the plurality of pressure chambers;

[0078] A first switching member that switches whether to connect the metering gas supply device to the two or more pressure chambers respectively;

[0079] A pressure adjustment device that can independently control the pressure of the plurality of pressure chambers; and

[0080] A second switching member that switches whether to connect the pressure adjustment device to the plurality of pressure chambers respectively,

[0081] wherein,

[0082] In order to detach the substrate adsorbed on the first surface of the elastic film, the control device controls the metering gas supply device, the first switching member, the pressure adjustment device, and the second switching member so that the metering gas supply device supplies metered gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers sequentially starting from the outermost pressure chamber.

[16]

[0084] A control program that controls a substrate grinding device, the substrate grinding device comprising:

[0085] A top ring body;

[0086] An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of pressure chambers concentrically with the top ring body;

[0087] A polishing member that polishes the adsorbed substrate;

[0088] A metering gas supply device that can supply a metered gas to two or more of the plurality of pressure chambers;

[0089] A first switching member that switches whether to connect the metering gas supply device to the two or more pressure chambers respectively;

[0090] A pressure adjusting device that can independently control the pressures of the plurality of pressure chambers; and

[0091] A second switching member that switches whether to connect the pressure adjusting device to the plurality of pressure chambers respectively,

[0092] wherein,

[0093] The control program causes a computer to function as a member that controls the metering gas supply device, the first switching member, the pressure adjusting device, and the second switching member in order to release the substrate adsorbed on the first surface of the elastic film, so that the metering gas supply device supplies a metered gas to the two or more pressure chambers, and then, the pressure adjusting device decompresses the plurality of pressure chambers in sequence starting from the outer pressure chamber.

[17]

[0095] A control method for controlling a substrate polishing apparatus, the substrate polishing apparatus comprising:

[0096] A top ring body;

[0097] An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of concentric pressure chambers between the top ring body;

[0098] A polishing member that polishes the adsorbed substrate;

[0099] A metering gas supply device that can supply a metered gas to two or more of the plurality of pressure chambers;

[0100] A first switching member that switches whether to connect the metering gas supply device to the two or more pressure chambers respectively;

[0101] A pressure adjusting device that can independently control the pressures of the plurality of pressure chambers; and

[0102] A second switching member that switches whether to connect the pressure adjusting device to the plurality of pressure chambers respectively,

[0103] Among them,

[0104] In order to separate the substrate adsorbed on the first surface of the elastic film, the metering gas supply device, the first switching member, the pressure adjustment device, and the second switching member are controlled so that the metering gas supply device supplies a metered gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in sequence starting from the outermost pressure chamber.

[0105] Effects of the Invention

[0106] The substrate can be separated from the elastic film. Description of the Drawings

[0107] Figure 1 It is a schematic structural diagram of the substrate processing apparatus 100.

[0108] Figure 2 It is a schematic perspective view of the substrate grinding apparatus 3.

[0109] Figure 3 It is a diagram schematically showing a schematic cross-section of the top ring 10.

[0110] Figure 4A1 It is a schematic diagram showing a structural example of the metering gas supply device 14.

[0111] Figure 4A2 It is a schematic diagram showing a structural example of the metering gas supply device 14.

[0112] Figure 4B It is a schematic diagram showing another structural example of the metering gas supply device 14.

[0113] Figure 5 It is a flowchart showing the processing steps of the substrate grinding apparatus 3.

[0114] Figure 6 It is a diagram for explaining the processing steps of the substrate grinding apparatus 3.

[0115] Figure 7 It is for explaining the Figure 6 processing steps of the substrate grinding apparatus 3 that follows.

[0116] Figure 8 It is for explaining the Figure 7 processing steps of the substrate grinding apparatus 3 that follows.

[0117] Figure 9 It is a schematic diagram for explaining the state before the start of separation after grinding.

[0118] Figure 10 It is a schematic diagram for explaining the state at the start of separation.

[0119] Figure 11 It is a schematic diagram showing the state of reducing the pressure in the pressure chamber A5.

[0120] Figure 12A It is a schematic diagram showing the state of further reducing the pressure in the pressure chamber A4.

[0121] Figure 12B It is a schematic diagram showing the situation of the substrate W being detached.

[0122] Figure 13 It is a flowchart showing the process for detaching the substrate W adsorbed by the film 13.

[0123] Figure 14 It is a diagram showing the process for detaching the substrate W.

[0124] Figure 15 It is an illustration of the subsequent Figure 14 process for detaching the substrate W.

[0125] Figure 16 It is an illustration of the subsequent Figure 15 process for detaching the substrate W.

[0126] Figure 17 It is an illustration of the subsequent Figure 16 process for detaching the substrate W.

[0127] Figure 18 It is an illustration of the subsequent Figure 17 process for detaching the substrate W.

[0128] Figure 19 It is a flowchart showing the process for detaching the substrate W adsorbed by the film 13.

[0129] Figure 20 It is a diagram showing the process for detaching the substrate W.

[0130] Figure 21 It is an illustration of the subsequent Figure 20 process for detaching the substrate W.

[0131] Figure 22 It is an illustration of the subsequent Figure 21 process for detaching the substrate W.

[0132] Figure 23 It is an illustration of the subsequent Figure 22 process for detaching the substrate W.

[0133] Figure 24 It is an illustration of the subsequent Figure 23 process for detaching the substrate W.

[0134] Figure 25 This is a diagram for explaining the process of detaching the substrate W that follows Figure 24 from the process of detaching the substrate W.

[0135] Figure 26 This is a diagram schematically showing a schematic cross-section of the top ring 10 related to the modified example.

[0136] Figure 27 This is a flowchart showing the process of detaching the substrate W adsorbed by the film 13.

[0137] Figure 28 This is a diagram for explaining the process of detaching the substrate W.

[0138] Figure 29 This is for explaining the process that follows Figure 28 from the process of detaching the substrate W.

[0139] Symbol Explanation

[0140] 100 Substrate Processing Apparatus

[0141] 1 Housing

[0142] 2 Loading Port

[0143] 3, 3a - 3d Substrate Grinding Apparatus

[0144] 4, 4a, 4b Substrate Cleaning Apparatus

[0145] 5 Substrate Drying Apparatus

[0146] 6, 6a - 6d Substrate Conveying Apparatus

[0147] 10 Top Ring

[0148] 11 Top Ring Body

[0149] 12 Retaining Ring

[0150] 13 Film

[0151] 14 Quantitative Gas Supply Device

[0152] 141 Chamber

[0153] 15 Pressure Adjustment Device

[0154] 16 Control Device

[0155] 20 Top Ring Shaft

[0156] 21 Cylinder

[0157] 22 Piston

[0158] 23 Piston Rod

[0159] 24 hammers

[0160] 25 vacuum generating source

[0161] 30 grinding table

[0162] 31 fixed - volume chamber

[0163] 32 pressure adjusting device

[0164] 30a grinding pad

[0165] 40 nozzle

[0166] Pressure chambers A1 - A5. Detailed implementation mode

[0167] Hereinafter, with reference to the accompanying drawings, the implementation modes related to the present invention will be specifically described.

[0168] (First implementation mode)

[0169] Figure 1 is a schematic structural diagram of the substrate processing apparatus 100. The substrate processing apparatus 100 is, for example, a CMP apparatus, and includes a substantially rectangular - shaped housing 1 and a loading port 2 disposed adjacent to the housing 1.

[0170] A substrate cassette (not shown) storing a plurality of substrates W is placed at the loading port 2. As the substrate W, for example, a semiconductor wafer or the like can be cited. However, the substrate W to be processed is not limited to a semiconductor wafer, and may also be other types of substrates such as a glass substrate or a ceramic substrate used in the manufacture of semiconductor devices. In addition, a semiconductor film, a metal film, etc. are formed on at least one surface of the substrate W.

[0171] The substrate processing apparatus 100 includes: one or more (in Figure 1 , four) substrate grinding apparatuses 3a - 3d (when not particularly distinguishing these, they will be collectively referred to as "substrate grinding apparatus 3"). One or more (in Figure 1 , two) substrate cleaning apparatuses 4a, 4b (when not particularly distinguishing these, they will be collectively referred to as "substrate cleaning apparatus 4"). And one or more (in Figure 1 , one) substrate drying apparatus 5, which are disposed inside the housing 1.

[0172] As an example, the substrate grinding apparatuses 3a - 3d are disposed along one side in the long - side direction of the housing 1. In addition, the substrate cleaning apparatuses 4a, 4b and the substrate drying apparatus 5 are disposed along the other side in the long - side direction of the housing 1.

[0173] The substrate grinding device 3 grinds the surface of the substrate W. More specifically, the substrate grinding device 3 supplies slurry onto the substrate W while rotating the substrate W, and grinds the surface of the substrate W by pressing a grinding member (not shown) against the surface of the substrate W. After grinding, the substrate W may have grinding debris and slurry remaining on it. A detailed structural example of the substrate grinding device 3 will be described later.

[0174] The substrate cleaning device 4 cleans the surface of the ground substrate W. More specifically, the substrate cleaning device 4 cleans the surface of the substrate W by pressing a substrate cleaning tool ( Figure 1 not shown) against the surface of the substrate W while rotating the substrate W.

[0175] The substrate drying device 5 dries the surface of the cleaned substrate W. For example, the substrate drying device 5 is a spin drying device that sprays isopropyl alcohol vapor from a spray nozzle onto the rotating substrate W to dry the substrate W, and rotates the substrate W at high speed to dry the substrate W by centrifugal force.

[0176] In addition, the substrate processing device 100 includes substrate transfer devices 6a to 6d (collectively referred to as "substrate transfer device 6" when not specifically distinguished). They are arranged inside the housing 1.

[0177] The substrate transfer device 6a is arranged adjacent to the loading port 2. The substrate transfer device 6a receives the substrate W before processing from the loading port 2 and delivers it to the substrate transfer device 6b, or receives the substrate W after processing from the substrate transfer device 6b.

[0178] The substrate transfer device 6b extends along the long side direction at the central part of the housing 1. The substrate transfer device 6b receives the substrate W before processing from the substrate transfer device 6a and delivers it to any one of the substrate grinding devices 3a to 3d, or receives the ground substrate W from the substrate grinding devices 3a to 3d and delivers it to the substrate transfer device 6c, or receives the dried substrate W from the substrate transfer device 6d and delivers it to the substrate transfer device 6a.

[0179] The substrate transfer device 6c is arranged between the substrate cleaning devices 4a and 4b. The substrate transfer device 6c receives the ground substrate W from the substrate transfer device 6b and delivers it to any one of the substrate cleaning devices 4a and 4b, or receives the cleaned substrate W from the substrate cleaning device 4a and delivers it to the substrate cleaning device 4b.

[0180] The substrate transfer device 6d is arranged between the substrate cleaning device 4b and the substrate drying device 5. The substrate transfer device 6d receives the cleaned substrate W from the substrate cleaning device 4b and delivers it to the substrate drying device 5, or receives the dried substrate W from the substrate drying device 5 and delivers it to the substrate transfer device 6b.

[0181] In addition, the arrangements of the substrate grinding device 3, the substrate cleaning device 4, the substrate drying device 5, and the substrate transfer device 6 are merely examples. It is sufficient to provide one or more substrate transfer devices 6 capable of transferring the substrate W in the order of the substrate grinding device 3, the substrate cleaning device 4, and the substrate drying device 5.

[0182] Figure 2 FIG. 4 is a schematic perspective view of the substrate grinding device 3. The substrate grinding device 3 includes: a top ring 10 (substrate holding device) for holding the substrate W to be ground, a top ring shaft 20 whose lower end is connected to the top ring 10, a grinding table 30 having a grinding pad 30a (grinding member) on its upper surface, and a nozzle 40 for supplying slurry. The outline of the operation of the substrate grinding device 3 is as described below.

[0183] The top ring 10 receives the substrate W from the substrate transfer device ( Figure 1 ). And a lifting mechanism (not shown) lowers the top ring shaft 20. Thereby, the lower surface of the substrate W comes into contact with the grinding pad 30a of the grinding table 30. And the nozzle 40 supplies slurry onto the grinding pad 30a. Moreover, a motor (not shown) rotates the top ring shaft 20, and another motor rotates the grinding table 30. Thereby, the substrate W and the grinding table 30 rotate while the lower surface of the substrate W is in contact with the grinding pad 30a, and thus the substrate W is ground.

[0184] Figure 3 FIG. 5 is a diagram schematically showing a schematic cross-section of the top ring 10. The top ring 10 is composed of a top ring body 11 (also referred to as a carrier or a bottom plate), a retaining ring 12, a flexible film 13 (elastic film), a metering gas supply device 14, a pressure adjustment device 15, a control device 16, etc. In addition, the metering gas supply device 14, the pressure adjustment device 15, and / or the control device 16 may be components constituting the top ring 10, or may be devices separate from the top ring 10.

[0185] The retaining ring 12 is an annular member provided on the outer peripheral portion of the top ring body 11. The periphery of the held substrate W is surrounded by the retaining ring 12 so that the substrate W does not fly out of the top ring 10 during grinding. In addition, the retaining ring 12 may be a single member. It may also be a double-ring structure composed of an inner ring and an outer ring provided outside it.

[0186] The film 13 is circular and can adsorb and hold the substrate W on its lower surface. And the film 13 is installed below the top ring body 11 and inside the retaining ring 12. Specifically, the film 13 is provided with a plurality of partitions facing upward, and these partitions are fixed to the top ring body 11. And a plurality of pressure chambers separated by each partition are formed between the top ring body 11 and the upper surface of the film 13. In Figure 3 a specific example, a circular pressure chamber A1 is formed at the center, and four annular pressure chambers A2 to A5 are formed outside it. The central positions of these pressure chambers are the same.

[0187] One end of each of the pipes L1 to L5 is connected to the pressure chambers A1 to A5, respectively. The other end of the pipe L1 branches, and one side is connected to the metering gas supply device 14 via the valve V11, and the other side is connected to the pressure regulating device 15 via the valve V21. The same applies to the pipes L2 and L4. The pipes L3 and L5 are not connected to the metering gas supply device 14, but are only connected to the pressure regulating device 15 via the valves L23 and L25, respectively. However, the pipes L3 and L5 may also be connected to the pressure regulating device 15 in the same manner as the pipes L1, L2, and L4.

[0188] The metering gas supply device 14 can supply metered gas to the pressure chambers A1, A2, and A4 via the pipes L1, L2, and L4 by combining with the valves V11, V12, and V14. More specifically, the metering gas supply device 14 has a chamber 141, and metered gas is supplied from this chamber 141. In addition, as long as the metering gas supply device 14 can supply metered gas to at least two of the pressure chambers A1 to A5, it may not be connected to the other pressure chambers. A specific structural example of the metering gas supply device 14 will be described later.

[0189] The pressure regulating device 15 can individually adjust the pressures of the pressure chambers A1 to A5 by combining with the valves V21 to V25. That is, the pressure regulating device 15 can pressurize, depressurize, or open to the atmosphere the pressure chambers A1 to A5 via the pipes L1 to L5 according to the control of the control device 16.

[0190] The control device 16 controls the valves V11, V12, V14, V21 to V25, the metering gas supply device 14, and the pressure regulating device 15. Each function based on the control device 16 can be realized by a processor executing a prescribed program. In addition, the valves V11, V12, and V14 can be said to be components that switch whether to connect the metering gas supply device 14 to the respective pressure chambers A1, A2, and A4. Further, the valves V21 to V25 can be said to be components that switch whether to connect the pressure regulating device 15 to the respective pressure chambers A1 to A5.

[0191] Figure 4A1 and Figure 4A2 is a schematic diagram showing a structural example of the metering gas supply device 14. The metering gas supply device 14 has: a cylinder 21 as the chamber 141, a piston 22, a piston rod 23, a hammer 24, and a vacuum generating source 25.

[0192] The cylinder 21 extends in a cylindrical shape in the vertical direction and has a hollow interior. The outer periphery of the piston 22 contacts the inner surface of the cylinder 21 and is capable of moving up and down. The piston rod 23 extends in the vertical direction and passes through an opening O3 provided in the upper surface of the cylinder 21. Further, a piston 22 is connected to the lower end of the piston rod 23, and a hammer 24 is fixed to the upper end.

[0193] The interior of the cylinder 21 is divided into a lower space B1 and an upper space B2 by the piston 22. Since the outer periphery of the piston 22 contacts the inner surface of the cylinder 21, gas hardly flows in and out between the lower space B1 and the upper space B2.

[0194] An opening O1 is provided at a position corresponding to the lower space B1 of the cylinder 21. A pipe L11 is connected to the opening O1. The pipe L11 is connected to pipes L1, L2, and L4 (see Figure 3 ) via V11, V12, and V14, respectively. The pipe L11 is provided with a valve V0 at the branch destination, and the lower space B1 can be opened to the atmosphere by opening the valve V0.

[0195] In addition, an opening O2 is provided at a position corresponding to the upper space B2 of the cylinder 21. A pipe L12 is connected to the opening O2. A vacuum generating source 25 is connected to the pipe L12, and the upper space B2 can be decompressed or opened to the atmosphere via the pipe L12.

[0196] By decompressing the upper space B2 with the vacuum generating source 25 while the valve V0 is open, the cylinder 21 rises, and a fixed amount of gas accumulates in the lower space B1 ( Figure 4A1 ). Then, if the upper space B2 is opened to the atmosphere while the valve V0 is closed, the hammer 24 moves downward by gravity, and a fixed amount of gas is supplied to the lower space B1 from the pipe L11 ( Figure 4A2 ). In addition, the valve V0 and the vacuum generating source 25 are controlled by the Figure 3 control device 16. Further, instead of providing the hammer 24, for example, a fixed amount of gas can be supplied by pressing the piston 22 downward from the vacuum generating source 25. In any case, a fixed amount of gas is supplied to the lower space B1 by the downward movement of the piston 22.

[0197] Figure 4B is a schematic diagram showing another structural example of the fixed amount gas supply device 14. The fixed amount gas supply device 14 includes a fixed capacity chamber 31 as a chamber 141 and a pressure adjustment device 32. In addition, the pressure adjustment device 32 is preferably shared with the Figure 3 shown pressure adjustment device 15.

[0198] An opening O4 is provided in the constant-volume chamber 31 and is connected to a pressure adjustment device 32 via a valve V1. In addition, an opening O5 is provided in the constant-volume chamber 31, and a pipe L12 is connected thereto. The pipe L12 is connected to the pipes L1, L2, and L4 (refer to Figure 3 ) via a valve V2.

[0199] In addition, the valves V1, V2, and the pressure adjustment device 32 are controlled by Figure 3 the control device 16. With the valve V1 open and the valve V2 closed, the pressure adjustment device 32 pressurizes the constant-volume chamber 31 to about 50 hPa, and then the valve V1 is set to the closed state, so that a fixed amount of high-pressure gas is accumulated in the constant-volume chamber 31. Then, by setting the valve V1 to the closed state and the valve V2 to the open state, a fixed amount of gas in the constant-volume chamber 31 is supplied from the pipe L12. In order to reduce the flow rate of the supplied gas, a needle valve V3 can be provided in the pipe L12.

[0200] Figure 5 FIG. is a flowchart showing the processing steps of the substrate grinding device 3. In addition, before the substrate is ground, that is, in the standby state where the top ring 10 does not hold the substrate W, as Figure 6 shown, the valves V11, V12, and V14 are closed, the valves V21 to V25 are open, and the pressure adjustment device 15 is opened to the atmosphere. As a result, the pressure chambers A1 to A5 are opened to the atmosphere.

[0201] First, the substrate grinding device 3 adsorbs and holds the substrate W conveyed by the substrate conveying device 6 ( Figure 1 ) on the film 13 of the top ring 10 (step S1). Specifically, as Figure 7 shown, in a state where the upper surface of the substrate W is in contact with the lower surface of the film 13, at least one of the pressure chambers A1 to A5 (in the example of Figure 7 , the pressure chambers A1 to A4) is depressurized to about -500 hPa from the pressure adjustment device 15. As a result, the substrate W is adsorbed on the lower surface of the film 13.

[0202] Next, the substrate grinding device 3 lowers the adsorbed and held substrate W so that the lower surface of the substrate W comes into contact with the grinding pad 30a of the grinding table 30 and grinds the substrate (step S2). Specifically, as Figure 8 shown, at least one of the pressure chambers A1 to A5 (in the example of Figure 8 , the pressure chambers A1 to A5) is pressurized to about 50 to 500 hPa from the pressure adjustment device 15. As a result, the lower surface of the substrate W is ground.

[0203] And, the substrate grinding device 3 separates the substrate W adsorbed by the film 13 (step S3).

[0204] As an example of a method for detaching the substrate W, pressurizing the pressure chambers A1 to A5 from the pressure adjusting device 15 is considered. However, in this method, the following situation may occur: the pressure from the pressure adjusting device 15 is too large, imposing a large burden on the substrate W, and in some cases, the substrate W may also be damaged.

[0205] As another example, it can be considered to eject nitrogen or water from the side of the substrate W to detach the substrate W. However, in this method, the posture of the substrate W falling due to the ejection is unstable, and the substrate W may be damaged during detachment.

[0206] Therefore, in the present embodiment, the substrate W adsorbed by the film 13 is detached as follows.

[0207] First, a schematic description of the detachment method according to the present embodiment will be given.

[0208] Figure 9 This is a schematic diagram showing the state after grinding and before the start of detachment. The upper surface of the substrate W is adsorbed to the film 13. However, the lower surface of the substrate W is separated from the grinding table 30 ( Figure 8 ).

[0209] Figure 10 This is a schematic diagram showing the state at the start of detachment. A fixed amount of gas is supplied from the fixed amount gas supply device 14 to two or more of the pressure chambers A1 to A5, and the film 13 is pressurized to about 1 to 3 hPa. This pressure is lower than the pressure during substrate grinding ( Figure 5 step S2). By supplying an appropriate amount of gas from the separate fixed amount gas supply device 14 to two or more of the pressure chambers A1 to A5, the same pressure can be applied to these pressure chambers, and a large burden on the substrate W can be suppressed. As shown in the figure, the end portion of the substrate W is peeled off from the film 13, but the substrate W still remains adsorbed by the film 13.

[0210] In addition, in this process, one or more arbitrary pressure chambers A1 to A5 (all pressure chambers A1 to A5 may also be pressurized according to circumstances) can be pressurized, but the outermost pressure chamber A5 can be not pressurized. This is because the end portion of the substrate W is in contact with the atmosphere and is easily peeled off from the film 13. After that, the pressure chambers A1 to A5 are depressurized in order from the outermost pressure chamber A5 to A1.

[0211] Figure 11 This is a schematic diagram showing the state after the pressure chamber A5 is depressurized. By depressurizing the pressure chamber A5, the region (outer peripheral portion) corresponding to the pressure chamber A5 of the film 13 is attracted by the top ring body 11. As a result, the substrate W is further peeled off from the film 13.

[0212] In addition, the pressure in the pressure chamber A5 at this time is about -50 kPa to -10 kPa. This pressure can be of the same level as the pressure when the substrate is adsorbed ( Figure 5 step S1), but considering the case where the thin film 13 is attached to the substrate W, it is preferable to suppress the burden on the substrate W by low vacuum.

[0213] Figure 12A FIG. is a schematic diagram showing a state where the pressure chamber A4 is further decompressed. By decompressing the pressure chamber A4, the regions corresponding to the pressure chambers A5 and A4 of the thin film 13 are attracted by the top ring body 11. As a result, the substrate W is further peeled off from the thin film 13. Moreover, the area of the substrate W adsorbed on the thin film 13 becomes small enough, so that the substrate W detaches from the thin film 13 and falls due to its own weight ( Figure 12B ).

[0214] In the case where the substrate W does not detach from the thin film 13 even when the pressure chamber A4 is decompressed, the pressure chambers A3 to A1 can be decompressed in sequence until detachment.

[0215] In addition, in Figure 10 , without pressurizing the outermost pressure chamber A5, while supplying a fixed amount of gas to any one or more of the pressure chambers A1 to A4, the pressure chamber A5 can be decompressed.

[0216] According to such a method, the burden applied to the substrate W is suppressed, and it is not necessary to spray nitrogen or water on the substrate W. Hereinafter, a more specific description will be given.

[0217] Figure 13 FIG. is a flowchart showing the process for detaching the substrate W adsorbed on the thin film 13. In addition, it is assumed that the grinding of the substrate W is completed and the lower surface of the substrate W is separated from the grinding table 30. Further, it is assumed that the fixed amount gas supply device 14 has completed the preparation for supplying a fixed amount of gas. For example, in Figure 4A1 the case of the fixed amount gas supply device 14 shown, a fixed amount of gas is accumulated in the lower space B1 and the valve V0 is closed. In Figure 4B the case of the fixed amount gas supply device 14 shown, a high-pressure fixed amount of gas is accumulated in the constant volume chamber 31 and the valves V1 and V2 are closed.

[0218] First, as shown in Figure 14 , it is assumed that the valves V11, V12, and V14 are open and the valves V21 to V24 are closed, and a fixed amount of gas is supplied from the fixed amount gas supply device 14 to the pressure chambers A1, A2, and A4. As a specific example, the upper space B2 of the fixed amount gas supply device 14 shown in Figure 4A1 is opened to the atmosphere. Or, the one shown in Figure 4BThe valve V2 of the quantitative gas supply device 14 shown is opened. As a result, the film 13 is pressurized. At the same time, or before and after this, the valve V25 is set to the open state, and the pressure adjustment device 15 decompresses the outermost pressure chamber A5 (step S11).

[0219] As a result, it is possible to expect that at least the outer peripheral portion of the substrate W is peeled off from the film 13.

[0220] Next, as Figure 15 shown, the valve V14 is closed (step S12a). After that, the valve V24 is set to the open state, and the pressure adjustment device 15 decompresses the first pressure chamber A4 located inside the pressure chamber A5 (step S12b). The reason for setting such an order is that if the pressure chamber A4 is decompressed with the valve V14 open, the other pressure chambers A1 to A3 will also be decompressed simultaneously. In addition, the quantitative gas supply device 14 then pressurizes the pressure chambers A1 and A2.

[0221] As a result, if the substrate W has been detached from the film 13 (yes in step S13), the detachment process ends. Even if it has not been detached (no in step S13), it is possible to expect that at least a part of the inner side of the substrate W in addition to the outer peripheral portion is peeled off from the film 13.

[0222] In the case where the substrate W has not been detached from the film 13, as Figure 16 shown, the valve V23 is set to the open state, and the pressure adjustment device 15 decompresses the first pressure chamber A3 located inside the pressure chamber A4 (step S14). In addition, the quantitative gas supply device 14 continues to pressurize the pressure chambers A1 and A2.

[0223] As a result, if the substrate W has been detached from the film 13 (yes in step S15), the detachment process ends. Even if it has not been detached (no in step S15), it is possible to expect that at least a part of the more inner side of the substrate W is peeled off from the film 13.

[0224] In the case where the substrate W has not been detached from the film 13, as Figure 17 shown, the valve V12 is closed (step S16a). After that, the valve V22 is set to the open state, so that the pressure adjustment device 15 decompresses the first pressure chamber A2 located inside the pressure chamber A3 (step S16b). In addition, the quantitative gas supply device 14 continues to pressurize the pressure chamber A1.

[0225] As a result, if the substrate W has been detached from the film 13 (yes in step S17), the detachment process ends. Even if it has not been detached (no in step S17), it is possible to expect that at least a part of the more inner side of the substrate W is peeled off from the film 13.

[0226] In the case where the substrate W has not been detached from the film 13, as Figure 18As shown, valve V11 is closed (step S18a), and then it is set to the state where valve V21 is open. The pressure adjustment device 15 reduces the pressure in one pressure chamber A1 inside the pressure chamber A2 (step S18b). As a result, the inside of the substrate W is further peeled off from the thin film 13, and the substrate W is detached from the thin film 13.

[0227] The opening and closing of the above-described valves V11, V12, V14, V21 to V25, the operation of the metering gas supply device 14, and the operation of the pressure adjustment device 15 can be controlled by the control device 16.

[0228] In this way, in the present embodiment, the thin film 13 is pressurized by supplying a fixed amount of gas from the metering gas supply device 14. Therefore, no large burden is imposed on the substrate W, and the substrate W can be detached from the thin film 13 without spraying nitrogen or water onto the substrate W.

[0229] (Second Embodiment)

[0230] In the above-described first embodiment, the pressure adjustment device 15 reduces the pressure of the thin film 13 ( Figure 13 steps S12b, S14, S16b). In contrast, in the second embodiment described below, the metering gas supply device 14 is used as a negative pressure source to reduce the pressure of the thin film 13. Hereinafter, the description common to the first embodiment will be omitted and simplified, and the description will be centered on the differences.

[0231] As described in the first embodiment, the pressure adjustment device 15 reduces the pressure in the pressure chamber to about -500 hPa in order to adsorb and hold the substrate ( Figure 5 step S1). This pressure may impose a burden on the substrate W depending on the situation. In contrast, when the metering gas supply device 14 is used as a negative pressure source, the pressure in the pressure chamber is only reduced to about -1 to 3 hPa. Therefore, the burden on the substrate W can be further reduced.

[0232] In order to use the metering gas supply device 14 as a negative pressure source, it is only necessary to generate a negative pressure in the chamber 141.

[0233] For example, in Figure 4A1 and Figure 4A2 shown in the metering gas supply device 14, in the state where the valves V11 to V14 provided in the pipes L1 to L4 connected to the valve V0 and the pipe L11 are closed, the vacuum generating source 25 reduces the pressure in the upper space B2 of the cylinder 21, and thereby a negative pressure is generated in the lower space B1 of the cylinder 21.

[0234] Alternatively, in Figure 4BIn the quantitative gas supply device 14 shown, the pressure adjustment device 32 decompresses the constant volume chamber 31 while the valve V2 is closed and the valve V1 is open, thereby generating a negative pressure in the constant volume chamber 31.

[0235] Figure 19 It is a flowchart showing the process for detaching the substrate W adsorbed on the thin film 13. In addition, it is assumed that the grinding of the substrate W is completed and the lower surface of the substrate W is separated from the grinding table 30. Further, it is assumed that the quantitative gas supply device 14 has completed the preparation for supplying the quantitative gas. For example, in Figure 4A1 the case of the quantitative gas supply device 14 shown, a quantitative gas is stored in the lower space B1 and the valve V0 is closed. In Figure 4B the case of the quantitative gas supply device 14 shown, a high-pressure quantitative gas is stored in the constant volume chamber 31 and the valves V1 and V2 are closed.

[0236] First, as Figure 20 shown, it is assumed that the valves V11, V12, and V14 are open and the valves V21 to V24 are closed, and a quantitative gas is supplied from the quantitative gas supply device 14 to the pressure chambers A1, A2, and A4. Thereby, the thin film 13 is pressurized. At the same time, or before or after this, the valve V25 is set to the open state, and the pressure adjustment device 15 decompresses the outermost pressure chamber A5 (step S21).

[0237] Thereby, it is expected that at least the outer peripheral portion of the substrate W is peeled off from the thin film 13.

[0238] Next, as Figure 21 shown, the valves V11, V12, and V14 are set to the closed state (step S22). Thereby, the pressure chambers A1, A2, and A4 are all cut off from the quantitative gas supply device 14. And a negative pressure is generated in the chamber 141 of the quantitative gas supply device 14 (step S23). Thereby, the quantitative gas supply device 14 functions as a negative pressure generation source.

[0239] Next, as Figure 22 shown, the valve V14 is set to the open state. Thereby, the pressure chamber A4 communicates with the quantitative gas supply device 14 that has become a negative pressure generation source, and the pressure chamber A4 is decompressed (step S24). In addition, even if the valve V14 is opened, since the valves V11 and V12 are closed, the pressures in the pressure chambers A1 and A2 hardly change.

[0240] Thereby, if the substrate W has been detached from the thin film 13 (Yes in step S25), the detachment process ends. Even if it has not been detached (No in step S25), it is expected that at least a part of the inner side of the substrate W except for the outer peripheral portion is peeled off from the thin film 13.

[0241] When the substrate W has not detached from the thin film 13 (No in step S25), as Figure 23 shown, the valve V23 is set to the open state, and the pressure adjustment device 15 decompresses the first pressure chamber A3 located inside the pressure chamber A4 (step S26). In this way, the decompression of the pressure chamber A3 not connected to the metering gas supply device 14 is performed by the pressure adjustment device 15.

[0242] As a result, if the substrate W has detached from the thin film 13 (Yes in step S27), the detachment process ends. Even if it has not detached (No in step S27), it is expected that at least a part of the inside of the substrate W except for the outer peripheral portion is peeled off from the thin film 13.

[0243] When the substrate W has not detached from the thin film 13 (No in step S27), as Figure 24 shown, the valve V12 is opened to connect the pressure chamber A2 to the metering gas supply device 14, thereby decompressing the pressure chamber A2 (step S28). In addition, even if the valve V12 is opened, since the valve V1 is closed, the pressure in the pressure chamber A1 hardly changes.

[0244] As a result, if the substrate W has detached from the thin film 13 (Yes in step S29), the detachment process ends. Even if it has not detached (No in step S29), it is expected that at least a part of the inside of the substrate W except for the outer peripheral portion is peeled off from the thin film 13.

[0245] When the substrate W has not detached from the thin film 13 (No in step S29), as Figure 25 shown, the valve V11 is opened to connect the pressure chamber A1 to the metering gas supply device 14, and the pressure chamber A1 is decompressed (step S2A). As a result, the inside of the substrate W is further peeled off from the thin film 13, and the substrate W detaches from the thin film 13.

[0246] In this way, in the present embodiment, instead of the pressure adjustment device 15, the metering gas supply device 14 is used as a negative pressure generation source to decompress the pressure chamber connected to the metering gas supply device 14. Therefore, the burden on the substrate W can be further reduced.

[0247] In addition, in the present embodiment, one metering gas supply device 14 is used for pressurization ( Figure 18 step S21) and decompression (steps S24, S28, and S2A). In contrast, as Figure 26As shown, the metering gas supply device 14 for decompression can also be provided separately from the metering gas supply device 14 for pressurization. When the metering gas supply device 14 for pressurization is only connected to the pressure chambers A1, A2, and A4, the metering gas supply device 14' for decompression can similarly be only connected to the pressure chambers A1, A2, and A4, but it can also be connected to other pressure chambers. In particular, the metering gas supply device 14' for decompression can also be connected to the pressure chamber A3, and its decompression can also be performed from the metering gas supply device 14'. By providing them separately, appropriate pressures can be set respectively. In particular, in the case of the metering gas supply device 14 ( Figure 4A1 and Figure 4A2 ) using the cylinder 21, since the generated pressure varies depending on the volume of the cylinder 21, the volume of the cylinder 21 can be optimized respectively.

[0248] (Third Embodiment)

[0249] As described in the first and second embodiments, when decompressing sequentially from the outer pressure chambers, the substrate W may not be detached (for example, Figure 13 No in step S17, Figure 18 No in step S29). In the third embodiment described below, when the substrate W does not detach even if a certain pressure chamber is decompressed, pressurization is performed again from the metering gas supply device 14. Hereinafter, the description common to the first and second embodiments will be omitted and simplified, and the description will focus on the differences.

[0250] Figure 27 is a flowchart showing the process for detaching the substrate W adsorbed on the thin film 13. Assume that via Figure 13 steps S11 to S16a or Figure 18 steps S21 to S27, the pressure chamber A2 is pressurized (steps S16b, S28), but the substrate W does not detach from the thin film 13 (No in steps S17, S29).

[0251] In this case, as Figure 28 shown, the valves V11, V12, and V14 are set to the closed state (step S31).

[0252] And, the metering gas supply device 14 prepares to supply metering gas (step S32). For example, in the case of the metering gas supply device 14 shown in Figure 4A1 and Figure 4A2 , the valve V0 is set to the open state, and the vacuum generating source 25 decompresses the upper space B2. As a result, the cylinder 22 rises. After that, by setting the valve V0 to the closed state, metering gas is accumulated in the lower space B1. In Figure 4BIn the case of the quantitative gas supply device 14 shown, the valve V1 is set to the open state and the valve V2 is set to the closed state, so that the pressure adjustment device 32 pressurizes the constant volume chamber 31. After that, by setting the valve V1 to the closed state, the quantitative gas accumulates in the constant volume chamber 31.

[0253] Next, as Figure 29 shown, the valve V11 is set to the open state to pressurize the pressure chamber A1 (step S33). Thereby, the center of the film 13 bulges downward, and the substrate W detaches from the film 13.

[0254] In this way, in the present embodiment, when the substrate W does not detach from the film 13 even if a certain pressure chamber is depressurized, a quantitative gas is supplied to repressurize the film 13. Thereby, the substrate W can be reliably detached from the film 13.

[0255] In addition, it is preferable to pressurize the central pressure chamber A1 in step S33, but other pressure chambers may also be used.

[0256] Any part or all of the respective functional units described in this specification can be implemented by a program. The program mentioned in this specification can be distributed by being non-temporarily stored in a computer-readable storage medium, can be distributed via a communication line such as the Internet (including wireless communication), or can be distributed in a state installed in any terminal.

[0257] Based on the above description, those skilled in the art may be able to think of additional effects and various modifications of the present invention, but the embodiments of the present invention are not limited to the above-described embodiments. For example, of course, inventions that extract only a part of each embodiment and inventions that combine multiple embodiments are also assumed. Various additions, changes, and partial deletions can be made without departing from the conceptual ideas and gists of the present invention derived from the content defined in the claims and their equivalents.

[0258] For example, in this specification, an example described as one device (or component, the same applies hereinafter) (including a device described as one device in the drawings) can also be implemented by multiple devices. Conversely, an example described as multiple devices in this specification (including devices described as multiple devices in the drawings) can also be implemented by one device. Or, part or all of the components and functions included in a certain device may also be included in other devices.

[0259] In addition, not all matters described in this specification are necessarily essential elements. In particular, matters described in this specification but not described in the claims are matters that can be arbitrarily added.

[0260] In addition, the term "component" in this specification and the scope of the patent claim, unless specifically denied, refers to hardware (or functions implemented by hardware) itself and does not include humans (or human mental activities).

[0261] Furthermore, the applicant only knows the publicly known inventions described in the documents in the "Prior Art Documents" section of this specification. It should be noted that the object of the present invention is not necessarily to solve the problems in the publicly known inventions in the documents. The problems to be solved by the present invention should be determined by considering the whole of this specification. For example, in this specification, when there is a description that a specific structure achieves a specified effect, it is also possible to solve the problems opposite to the specified effect. However, it does not mean that such a specific structure must be taken as an essential requirement.

Claims

1. A method for detaching a substrate, wherein the substrate is adsorbed to a first surface of an elastic film of a substrate holding device of a substrate polishing device, characterized in that: A plurality of concentric pressure chambers are formed between a top ring main body of the substrate holding device and a second surface of the elastic membrane. The method comprises a first step and a second step. The first step is to supply a fixed amount of gas to two or more pressure chambers among the plurality of pressure chambers to pressurize the elastic membrane. The second step is to reduce the pressure of the plurality of pressure chambers in order from the outer pressure chamber.

2. The method for detaching a substrate according to claim 1, characterized in that: The two or more pressure chambers are not the outermost pressure chambers.

3. The method for detaching a substrate according to claim 2, characterized in that: While a fixed amount of gas is supplied to the two or more pressure chambers in the first step, the outermost pressure chamber is depressurized in the second step.

4. The method for detaching a substrate according to claim 1 or 2, characterized in that: In the first step, a fixed amount of gas is supplied to the two or more pressure chambers from a single fixed amount of gas supply device.

5. The method for detaching a substrate according to claim 1 or 2, characterized in that: The first step includes opening a first valve provided between each of the two or more pressure chambers and a quantitative gas supply device, The second step includes opening a second valve provided between each of the plurality of pressure chambers and the pressure regulating device, In the second step, when depressurizing each of the two or more pressure chambers, the first valve is closed first, and then the second valve is opened.

6. The method for detaching a substrate according to claim 1 or 2, characterized in that: In the first step, a fixed amount of gas is supplied from the chamber to the two or more pressure chambers. The method includes a step of generating a negative pressure in the chamber between the first step and the second step, In the second step, the two or more pressure chambers are depressurized by connecting the chamber to the two or more pressure chambers.

7. The method for detaching a substrate according to claim 1 or 2, characterized in that: The method includes a third step of supplying a fixed amount of gas to one or more of the two or more pressure chambers when the substrate does not detach even when the pressure in one of the pressure chambers is reduced in pressure in the second step.

8. A method for polishing a substrate using a substrate holding device having a top ring body and an elastic membrane, characterized in that: The first surface of the elastic film can adsorb the substrate. A plurality of concentric pressure chambers are formed between the top ring body and the second surface of the elastic membrane. The method comprises: a first step of adsorbing the substrate to the first surface of the elastic membrane by reducing the pressure of at least one of the plurality of pressure chambers in a state where the adsorbed surface of the substrate is in contact with the first surface of the elastic membrane; a second step of bringing the polished surface of the substrate into contact with a polishing member and polishing the polished surface of the substrate while pressurizing at least one of the plurality of pressure chambers; a third step of isolating the polished surface of the substrate from the polishing member and supplying a fixed amount of gas to two or more of the plurality of pressure chambers to pressurize the elastic film; as well as and a fourth step of reducing the pressure of the plurality of pressure chambers in order from the outer pressure chamber to separate the substrate from the first surface of the elastic film.

9. The method for polishing a substrate according to claim 8, wherein: In the second step, the pressure regulating device pressurizes at least one of the plurality of pressure chambers with a first pressure. In the third step, the elastic film is pressurized at a second pressure lower than the first pressure.

10. The method for polishing a substrate according to claim 8 or 9, characterized in that: In the first step, the pressure regulating device reduces the pressure of at least one of the plurality of pressure chambers. In the third step, a fixed amount of gas is supplied from the chamber to the two or more pressure chambers. A step of generating negative pressure in the chamber is included between the third step and the fourth step. In the fourth step, the two or more pressure chambers are depressurized by connecting the chamber to the two or more pressure chambers. The burden applied to the substrate by the reduced pressure in the fourth step is smaller than the burden applied to the substrate by the reduced pressure in the first step.

11. A substrate polishing device, characterized in that: have: Top ring body; an elastic membrane having a first surface capable of adsorbing the substrate and a second surface forming a plurality of concentric pressure chambers with the top ring body; A grinding component that grinds the adsorbed substrate; a quantitative gas supply device capable of supplying a quantitative gas to two or more pressure chambers among the plurality of pressure chambers; a first switching member configured to switch whether the quantitative gas supply device is connected to each of the two or more pressure chambers; a pressure regulating device capable of individually controlling the pressures of the plurality of pressure chambers; a second switching member configured to switch whether the pressure regulating device is connected to each of the plurality of pressure chambers; as well as A control device controls the quantitative gas supply device, the first switching member, the pressure adjustment device and the second switching member in order to detach the substrate adsorbed on the first surface of the elastic membrane, so that the quantitative gas supply device supplies a quantitative gas to the more than two pressure chambers, and then the pressure adjustment device depressurizes the multiple pressure chambers in sequence starting from the outer pressure chamber.

12. The substrate polishing device according to claim 11, characterized in that: The quantitative gas supply device comprises: Cylinders; and The piston divides the cylinder into an upper space and a lower space, As the piston moves downward, a fixed amount of gas is supplied to the lower space of the cylinder.

13. The substrate polishing device according to claim 11, characterized in that: The quantitative gas supply device has a constant volume chamber, and the constant volume chamber is pressurized by the pressure regulating device.

14. A substrate processing device, characterized in that: have: The substrate polishing device according to any one of claims 11 to 13; a substrate cleaning device, the substrate cleaning device cleaning the substrate after being ground by the substrate grinding device; as well as A substrate drying device dries the substrate cleaned by the substrate cleaning device.

15. A control device for controlling a substrate polishing device, the substrate polishing device comprising: Top ring body; an elastic membrane having a first surface capable of adsorbing the substrate and a second surface forming a plurality of concentric pressure chambers with the top ring body; A grinding component that grinds the adsorbed substrate; a quantitative gas supply device capable of supplying a quantitative gas to two or more pressure chambers among the plurality of pressure chambers; a first switching member configured to switch whether the quantitative gas supply device is connected to the two or more pressure chambers respectively; a pressure regulating device capable of individually controlling the pressures of the plurality of pressure chambers; as well as a second switching member for switching whether or not the pressure regulating device is connected to each of the plurality of pressure chambers; It is characterized in that In order to detach the substrate adsorbed on the first surface of the elastic membrane, the control device controls the quantitative gas supply device, the first switching member, the pressure adjustment device and the second switching member so that the quantitative gas supply device supplies a quantitative gas to the more than two pressure chambers, and then the pressure adjustment device reduces the pressure of the multiple pressure chambers in sequence starting from the outer pressure chamber.

16. A control program for controlling a substrate polishing device, the substrate polishing device comprising: Top ring body; an elastic membrane having a first surface capable of adsorbing the substrate and a second surface forming a plurality of concentric pressure chambers with the top ring body; A grinding component that grinds the adsorbed substrate; a quantitative gas supply device capable of supplying a quantitative gas to two or more pressure chambers among the plurality of pressure chambers; a first switching member configured to switch whether the quantitative gas supply device is connected to the two or more pressure chambers respectively; a pressure regulating device capable of individually controlling the pressures of the plurality of pressure chambers; as well as a second switching member for switching whether or not the pressure regulating device is connected to each of the plurality of pressure chambers; It is characterized in that The control program enables the computer to function as a component that controls the quantitative gas supply device, the first switching member, the pressure adjustment device, and the second switching member in order to detach the substrate adsorbed on the first surface of the elastic membrane, so that the quantitative gas supply device supplies a quantitative gas to the more than two pressure chambers, and then the pressure adjustment device depressurizes the multiple pressure chambers in sequence starting from the outer pressure chamber.

17. A control method for controlling a substrate polishing device, the substrate polishing device comprising: Top ring body; an elastic membrane having a first surface capable of adsorbing the substrate and a second surface forming a plurality of concentric pressure chambers with the top ring body; A grinding component that grinds the adsorbed substrate; a quantitative gas supply device capable of supplying a quantitative gas to two or more pressure chambers among the plurality of pressure chambers; a first switching member configured to switch whether the quantitative gas supply device is connected to the two or more pressure chambers respectively; a pressure regulating device capable of individually controlling the pressures of the plurality of pressure chambers; as well as a second switching member for switching whether or not the pressure regulating device is connected to each of the plurality of pressure chambers; It is characterized in that In order to detach the substrate adsorbed on the first surface of the elastic membrane, the quantitative gas supply device, the first switching member, the pressure adjustment device and the second switching member are controlled so that the quantitative gas supply device supplies a quantitative gas to the more than two pressure chambers, and then the pressure adjustment device reduces the pressure of the multiple pressure chambers in sequence starting from the outer pressure chamber.

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