Tantalum film growth method and device, storage medium and equipment

Abstract

The embodiment of the invention discloses a tantalum film growth method and device, a storage medium and equipment. The method comprises the following steps: growing a corresponding preset metal seed layer on a substrate; wherein the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold value; and growing a tantalum film in a target form on the preset metal seed layer at a preset temperature which is not less than 300 DEG C. Therefore, the preset metal seed layer is added on the substrate, so that the tantalum film with the lattice constant close to that of the preset metal seed layer instead of the tantalum film with the lattice constant close to that of the substrate can be grown subsequently, and the tantalum film with the target form is obtained by applying the high-temperature grown tantalum film on the preset metal seed layer, so that the two-energy-level loss is reduced; the coherence time of quantum bits is increased, the relaxation time is further improved, and the computing power of a quantum computer is improved.

Description

Technical Field

[0001] This application relates to the field of quantum technologies, and particularly to a method and apparatus for growing tantalum films, a storage medium, and a device. Background Art

[0002] Quantum computers utilize quantum superposition states for computing, and thus have more powerful computing capabilities than traditional computers. However, quantum superposition states are easily affected by the environment and then return to the classical state. The time taken for a quantum superposition state to return to the classical state is called the relaxation time. The length of the relaxation time directly affects the computing power of quantum computers. Therefore, one of the key issues in the field of quantum technologies is how to extend the relaxation time.

[0003] A quantum chip, as a key component of a quantum computer, is a tiny chip used to store and operate qubits (quantum bits). The bits in a quantum computer are called qubits, which are different from the bits in a classical computer and have more properties and richer states.

[0004] In the related art, a superconducting metal film can be grown on a substrate to fabricate a quantum chip. For example, a tantalum film can be grown on a sapphire substrate to fabricate a quantum chip. However, since the morphology of the tantalum film after growth is uncertain, it will interact with the microwaves in the quantum chip, resulting in a high two-level loss (TLS loss), shortening the coherence time of the qubits, and further reducing the relaxation time, thus decreasing the computing power of the quantum computer. Summary of the Invention

[0005] Embodiments of this application provide a method and apparatus for growing tantalum films, a storage medium, and a device, which can obtain a tantalum film with a target morphology, reduce the two-level loss, increase the coherence time of the qubits, and further improve the relaxation time and the computing power of the quantum computer.

[0006] To solve the above technical problems, the embodiments of this application provide the following technical solutions:

[0007] A method for growing a tantalum film includes:

[0008] Growing a corresponding preset metal seed layer on a substrate;

[0009] wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold;

[0010] Growing a tantalum film with a target morphology on the preset metal seed layer at a preset temperature not less than 300 degrees Celsius.

[0011] A device for growing a tantalum film includes:

[0012] The first growth unit is used to grow a corresponding preset metal seed layer on a substrate;

[0013] Wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold;

[0014] The second growth unit is used to grow a tantalum film with a target morphology on the preset metal seed layer at a preset temperature not less than 300 degrees Celsius.

[0015] In some embodiments, the preset metal in the preset metal seed layer is niobium, and the first growth unit is used for:

[0016] Growing a preset metal seed layer with a first preset thickness on the substrate through a first preset coating power, a first preset argon flow rate, and a first preset target-substrate distance.

[0017] In some embodiments, the first preset coating power is 190 watts, the first preset argon flow rate is 2.5 standard cubic centimeters per minute, the first preset target-substrate distance is 100 millimeters, and the first preset thickness is 2 nanometers.

[0018] In some embodiments, the second growth unit is used for:

[0019] Growing a tantalum film with a second preset thickness and a target morphology on the preset metal seed layer through a second preset coating power, a second preset argon flow rate, a second preset target-substrate distance, and a preset temperature.

[0020] In some embodiments, the second preset coating power is 170 watts, the second preset argon flow rate is 10 standard cubic centimeters per minute, the second preset target-substrate distance is 100 millimeters, and the second preset thickness is 200 nanometers.

[0021] In some embodiments, the value of the preset temperature ranges from 300 degrees Celsius to 500 degrees Celsius.

[0022] In some embodiments, the second growth unit is further used for:

[0023] Growing a corresponding tantalum film on the preset metal seed layer through a preset temperature;

[0024] Performing X-ray diffraction measurement on the tantalum film to obtain the intensities of the X-rays reflected at different diffraction angles;

[0025] When it is detected that the intensity of the X-rays reflected at a first preset diffraction angle is the maximum, determining that the morphology of the tantalum film is the target morphology.

[0026] In some embodiments, the first preset diffraction angle is a diffraction angle of 38.23 degrees formed with the substrate.

[0027] In some embodiments, the target morphology is the alpha phase.

[0028] In some embodiments, the device further includes a testing unit for:

[0029] Growing a corresponding test preset metal seed layer on a test substrate;

[0030] Sequentially selecting different test temperatures from a target temperature range, and growing corresponding test tantalum films at different test temperatures on the test preset metal seed layer;

[0031] According to the first preset diffraction angle, performing X-ray diffraction measurement on each test tantalum film to obtain the test intensity of the X-rays reflected by each test tantalum film at the first preset diffraction angle;

[0032] Determining the test temperature corresponding to the test tantalum film with the maximum test intensity as the preset temperature.

[0033] In some embodiments, the range of the target temperature range is from 300 degrees Celsius to 500 degrees Celsius.

[0034] In some embodiments, the substrate is a silicon substrate.

[0035] A computer-readable storage medium stores multiple instructions, and the instructions are suitable for being loaded by a processor to execute the above-mentioned tantalum film growth method.

[0036] A computer device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the above-mentioned tantalum film growth method is implemented.

[0037] A computer program product or a computer program includes computer instructions, and the computer instructions are stored in a storage medium. The processor of the computer device reads the computer instructions from the storage medium, and the processor executes the computer instructions to implement the above-mentioned tantalum film growth method.

[0038] In the embodiments of the present application, a corresponding preset metal seed layer is grown on a substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; on the preset metal seed layer, a tantalum film with a target morphology is grown at a preset temperature, and the preset temperature is not less than 300 degrees Celsius. In this way, by adding a layer of preset metal seed layer on the substrate, a tantalum film with a lattice constant close to that of the preset metal seed layer can be grown subsequently, rather than a tantalum film with a lattice constant close to that of the substrate. And by applying a high temperature to grow the tantalum film on the preset metal seed layer, a tantalum film with a target morphology is obtained. Compared with the solution of directly growing a tantalum film on a sapphire substrate to prepare a quantum chip in the related art, the tantalum film with a target morphology obtained in the present application can reduce the interaction with microwaves in the quantum chip, so as to reduce two-level loss, increase the coherence time of qubits, and further improve the relaxation time and increase the computing power of the quantum computer.

[0039] Other features and advantages of the present disclosure will be set forth in the following description, and in part will be obvious from the description, or may be learned by practice of the present disclosure. The objectives and other advantages of the present disclosure may be realized and attained by the structure particularly pointed out in the specification, claims as well as the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0041] Figure 1 It is a schematic diagram of the tantalum film structure provided by the embodiments of the present application.

[0042] Figure 2 It is a schematic flowchart of the tantalum film growth method provided by the embodiments of the present application.

[0043] Figure 3 It is a transmission electron microscopy image of the tantalum film of the tantalum film growth method provided by the embodiments of the present application.

[0044] Figure 4 It is another transmission electron microscopy image of the tantalum film of the tantalum film growth method provided by the embodiments of the present application.

[0045] Figure 5 It is another transmission electron microscopy image of the tantalum film of the tantalum film growth method provided by the embodiments of the present application.

[0046] Figure 6 It is an X-ray diffraction pattern of the tantalum film growth method provided by the embodiments of the present application.

[0047] Figure 7 Another process schematic diagram of the tantalum film growth method provided by the embodiment of the present application.

[0048] Figure 8 Another process schematic diagram of the tantalum film growth method provided by the embodiment of the present application.

[0049] Figure 9 It is a schematic structural diagram of the tantalum film growth device provided by the embodiment of the present application.

[0050] Figure 10 It is a schematic structural diagram of the terminal provided by the embodiment of the present application.

[0051] Figure 11 It is a schematic structural diagram of the server provided by the embodiment of the present application. Detailed implementation manners

[0052] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0053] It should be noted that in some processes described in the specification, claims and the above-mentioned drawings, there are multiple steps that appear in a specific order, but it should be clearly understood that these steps can be executed not in the order in which they appear in this article or in parallel. The step numbers are only used to distinguish different steps, and the numbers themselves do not represent any execution order. In addition, descriptions such as "first", "second" or "target" in this article are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence.

[0054] Before further elaborating on the embodiments of the present disclosure, the nouns and terms involved in the embodiments of the present disclosure are described. The nouns and terms involved in the embodiments of the present disclosure are applicable to the following explanations:

[0055] Quantum computing: Quantum computing is a computing method designed using the principles of quantum mechanics. The biggest difference between it and traditional computing is that it uses quantum bits (qubits) instead of traditional binary bits (bits) for computing. Quantum bits have different characteristics from traditional binary bits. The most important characteristic among them is that they can be in multiple states simultaneously. It is precisely because quantum bits can represent two states simultaneously and carry more information, and the same number of quantum bit units can perform more data operations than classical computing, so quantum computing greatly improves the processing speed of the computer.

[0056] Quantum bit: It is the basic information unit in quantum computing. The role played by quantum bits in quantum computing is similar to that played by bits in traditional computing, but their behaviors are very different. Classical bits are binary and can only store 0 or 1 bit, while quantum bits can store superpositions of all possible states, that is, superposition states of state |0> and state |1>. For example, the "dead" and "alive" states of "Schrödinger's cat". However, before the box is opened, "Schrödinger's cat" is in a superposition of the "dead" and "alive" states. Since quantum bits can represent two states simultaneously and carry more information, the same number of quantum bit units can perform more data operations than classical computing. Therefore, the processing speed of the computer is greatly improved.

[0057] Quantum bit unit: The storage unit in quantum hardware resources used to accommodate the quantum bits participating in the operation.

[0058] The coherence time of a quantum bit refers to the length of time that a quantum bit can maintain its quantum state.

[0059] In quantum mechanics, the quantum coherence of an open quantum system will gradually be lost over time due to quantum entanglement with the external environment. This effect is called quantum decoherence (English: Quantum decoherence), also known as quantum disentanglement.

[0060] Two-level energy system: It refers to a quantum system composed of two energy levels. In quantum mechanics, an energy level usually corresponds to a state of the system.

[0061] Two-level loss (TLS loss): It refers to the two-level system in the quantum chip material, which will shorten the coherence time of the quantum bit due to interaction with the microwave in the quantum chip.

[0062] The substrate can be a silicon substrate or a sapphire substrate. The substrate is one of the basic structures of the quantum chip. It carries each functional unit of the quantum chip and provides structural support. The material and characteristics of the substrate will have an important impact on the electrical, thermal, and mechanical properties of the quantum chip.

[0063] Superconducting metal film, such as aluminum film or tantalum film, is used to manufacture superconducting circuits.

[0064] Seed layer: A thin layer of metal or other material is coated on the surface of the material to provide a seed point to promote subsequent material deposition or growth.

[0065] Tantalum film: It is a thin sheet material made of tantalum metal and can be used to manufacture the transition layer and electrodes in the quantum chip. The transition layer can improve the structural stability, and the electrodes can provide stable current transmission ability.

[0066] The tantalum film has two forms: the α (alpha) phase and the β (beta) phase. The α phase refers to the body-centered cubic structure of the tantalum film, which presents a strip-shaped morphology under an electron microscope. The β phase refers to the face-centered cubic structure of the tantalum film, which presents a cluster-shaped morphology under an electron microscope. It should be noted that compared with the β phase, the α phase is more suitable for fabricating superconducting quantum chips because it has lower TLS loss. The reason why the α-phase tantalum film has lower TLS loss is that the oxide layer of the α-phase tantalum film is denser, and the oxide layer can prevent contaminants on the substrate surface from damaging the substrate surface. At the same time, it can also flatten the uneven parts on the substrate surface so that subsequent process steps can be carried out correctly. The oxide layer is a very important insulating layer in integrated circuits. It can effectively isolate the mutual interference between different circuits and ensure the normal operation of the chip circuit. Therefore, the α-phase tantalum film is more suitable for quantum chips.

[0067] To better illustrate the embodiments of the present application, the processing process of the quantum chip is briefly described below. First, a superconducting metal film (aluminum film or tantalum film) is formed on a substrate (silicon substrate or sapphire substrate), then a uniform layer of photoresist is spin-coated on the surface of the superconducting metal film, and then according to the pattern we need, the photoresist in a specific area is irradiated with a laser, so that the properties of the corresponding part of the photoresist are changed, and then it is rinsed with a developer to dissolve and wash away the irradiated photoresist. In the next step, the exposed metal layer is bombarded to etch out the shape of the circuit, and then the remaining photoresist is washed away, and the superconducting circuit part is completed.

[0068] Next, we continue to spin-coat two layers of electron beam photoresist to fabricate the core component of the quantum chip - the Josephson junction. Then we use EBL (Electron Beam Lithography) to define the Josephson junction area. Through evaporation at a specific angle, we can grow superconducting metal only in specific trenches. During evaporation, an oxidation operation is added to prepare the intermediate oxide layer. Thus, a three-layer Josephson junction is completed. Then, through rinsing with a stripping solution, the excess part is washed away, and thus a quantum chip is completed.

[0069] Currently, aluminum films are usually used as superconducting metal films to fabricate quantum chips. However, with the continuous development of micro-nano processing, tantalum films are increasingly attracting attention as superconducting metal films for fabricating quantum chips. And because tantalum films have less TLS loss than aluminum films, longer relaxation times can be obtained, so they are gradually replacing aluminum films as superconducting metal films.

[0070] In the process of researching and practicing related technologies, the inventors of the present application found that tantalum films have two forms: α-phase and β-phase, and α-phase tantalum films are more suitable for quantum chips. However, since tantalum films are currently directly grown on substrates, the morphology of the tantalum films after growth is uncertain, resulting in a relatively high two-level loss, shortening the coherence time of qubits, and further leading to a decrease in the relaxation time, thereby reducing the computing power of quantum computers.

[0071] To solve the above problems, the embodiments of the present application propose a technology capable of growing high-purity α-phase tantalum films. Please refer to Figure 1 as shown. Figure 1 FIG. is a schematic diagram of the tantalum film structure provided by the embodiments of the present application. In the embodiments of the present application, the tantalum film structure includes a substrate, a preset metal seed layer, and a tantalum film. That is, in the embodiments of the present application, before growing the tantalum film on the substrate, a preset metal seed layer is added, and a certain high temperature is applied during the growth of the tantalum film to obtain a high-purity α-phase tantalum film, reduce the two-level loss, increase the coherence time of qubits, and further increase the relaxation time, so as to improve the computing power of quantum computers. The specific implementation process will be described in detail in the following specific embodiments.

[0072] In this embodiment, the description will be made from the perspective of the tantalum film growth device. The tantalum film growth device can be specifically integrated in a computer device with a storage unit and a microprocessor and having computing power. The computer device can be a terminal or a server. It should be noted that the computer device can control the corresponding vacuum electron beam coating machine to perform coating operations.

[0073] Please refer to Figure 2 , Figure 2 FIG. is a schematic flowchart of the tantalum film growth method provided by the embodiments of the present application. The tantalum film growth method includes:

[0074] In step 201, a corresponding preset metal seed layer is grown on the substrate.

[0075] Among them, the substrate can be a sapphire substrate or a silicon substrate. The sapphire substrate is a material used for chip substrates. Sapphire has good stability and can be used in high-temperature growth processes. Sapphire has high mechanical strength and is easy to process and clean. Therefore, most processes generally use sapphire as the substrate. The silicon substrate is an electronic-grade silicon material and is one of the important materials for preparing semiconductor devices. It is usually used for growing crystals and preparing thyristor devices. Due to its unique electrical and mechanical properties, the silicon substrate is widely used in fields such as integrated circuits and solar cells. The main characteristics of the silicon substrate are high-temperature stability, mechanical strength, and optical transparency. At high temperatures, the silicon substrate will not have problems such as expansion and thermal deformation and can maintain extremely high stability. At the same time, the silicon substrate also has good mechanical strength and can withstand great pressure and extrusion force. In the embodiment of the present application, taking the silicon substrate as an example for illustration, the silicon substrate has better compatibility than the sapphire substrate.

[0076] The preset metal in the preset metal seed layer can be niobium or chromium, that is, the preset metal seed layer is a niobium seed layer or a chromium seed layer.

[0077] To better understand the embodiments of the present application, the lattice constant is first explained. The lattice constant, or the lattice parameter, refers to the side length of the unit cell, that is, the side length of each parallelepiped unit. It is an important basic parameter of the crystal structure. It should be noted that the substrate, the preset metal seed layer, and the tantalum film all have lattice constants. For example, when the substrate is a silicon substrate, the lattice constant of the silicon substrate is 0.543 nm (nanometers). When the preset metal seed layer is a niobium seed layer, the lattice constant of the niobium seed layer is 0.447 nm, and when the preset metal seed layer is a chromium seed layer, the lattice constant of the chromium seed layer is 0.2884 nm. Correspondingly, the tantalum film has two forms, the α-phase tantalum film and the β-phase tantalum film. The lattice constant of the α-phase tantalum film is 0.384 nm, and the lattice constant of the β-phase tantalum film is 0.531 nm.

[0078] In the related art, when growing the tantalum film, the tantalum film atoms need to correspond one by one to the atoms of the layer to be grown. From the above comparison, it can be seen that since the lattice constant of the silicon substrate, 0.543 nm, is closer to the lattice constant of the β-phase tantalum film, 0.531 nm, and is quite different from the lattice constant of the α-phase tantalum film, 0.384 nm. Therefore, assuming that the tantalum film is directly grown on the silicon substrate, it is easy to grow the β-phase tantalum film (i.e., the growth method of the related art). To better illustrate the embodiments of the present application, please refer to Figure 3 as shown Figure 3 is the transmission electron microscope image of the tantalum film provided by the embodiment of the present application for the tantalum film growth method. The transmission electron microscope Figure 1 is the transmission electron microscope image after directly growing the tantalum film on the silicon substrate. It can be seen that the transmission electron microscope Figure 1When a cluster-like morphology is presented, it indicates that when tantalum film is directly grown on a silicon substrate, the obtained tantalum film is a β-phase tantalum film, which will cause a relatively high two-level loss in the subsequent processed quantum chip, shorten the coherence time of qubits, and then lead to a decrease in the relaxation time, resulting in a decline in the computing power of the quantum computer.

[0079] Correspondingly, since the lattice constant of the preset metal seed layer is closer to that of the α-phase tantalum film and has a larger difference from that of the β-phase tantalum film. For example, the lattice constant of the niobium seed layer, 0.447 nm, is closer to that of the α-phase tantalum film, 0.384 nm, and has a larger difference from that of the β-phase tantalum film, 0.531 nm. The lattice constant of the chromium seed layer is 0.2884 nm, which is closer to that of the α-phase tantalum film, 0.384 nm, and has a larger difference from that of the β-phase tantalum film, 0.531 nm. Therefore, assuming that tantalum film is grown on the preset metal seed layer, it is easy to grow an α-phase tantalum film. Since the α-phase tantalum film is more suitable for quantum chips, in the embodiments of the present application, in order to obtain an α-phase tantalum film, a corresponding preset metal seed layer can be first grown on the substrate. The absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold, that is, the lattice constant of the preset metal seed layer needs to be closer to that of the α-phase tantalum film. Since the lattice constant of the substrate is closer to that of the β-phase tantalum film, the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate will be greater than a certain threshold, that is, the preset threshold. The preset threshold is the critical value for defining the difference, which can be 0.6 nm or 0.7 nm. The specific value is subject to the actual processing scenario, and the examples here are not specifically limited.

[0080] In some embodiments, taking the niobium seed layer as the preset metal seed layer as an example, growing the corresponding preset metal seed layer on the substrate may include: growing a preset metal seed layer with a first preset thickness on the substrate through a first preset coating power, a first preset argon flow rate, and a first preset target-substrate distance.

[0081] It should be noted that the coating power is the power of the coating machine, with the unit of watt (W). The argon flow rate is the specific value of the flow rate of argon as the protective gas, with the unit of standard cubic centimeter per minute (sccm). The target-substrate distance refers to the distance between the target material and the substrate. The size of the target-substrate distance has two main effects on multi-arc ion plating. First, the size of the target-substrate distance will affect the energy and angle of the ion beam. When the target-substrate distance is small, the energy and angle of the ion beam will be more concentrated, which can make the composition and structure of the thin film more uniform. When the target-substrate distance is large, the energy and angle of the ion beam will be more dispersed, which easily leads to non-uniform composition and structure of the thin film, thus affecting the quality and performance of the thin film.

[0082] Therefore, in the embodiments of the present application, the first preset coating power is the coating power preset manually to achieve stable growth of the preset metal seed layer. For example, it can be 190 watts. The first preset argon flow rate is the argon flow rate preset manually to achieve stable growth of the preset metal seed layer. For example, it can be 2.5 standard cubic centimeters per minute. The first preset target-substrate distance is the target-substrate distance preset manually to achieve stable growth of the preset metal seed layer. For example, it can be 100 mm (millimeters). The first preset thickness is the thickness preset manually to achieve stable growth of the preset metal seed layer. For example, it can be 2 nm. Thus, a stable preset metal seed layer with the first preset thickness can be grown on the substrate through the first preset coating power, the first preset argon flow rate, and the first preset target-substrate distance. For example, a stable preset metal seed layer with a first preset thickness of 2 nm can be grown through a first preset coating power of 190 watts, a first preset argon flow rate of 2.5 standard cubic centimeters per minute, and a first preset target-substrate distance of 100 millimeters.

[0083] In step 202, a tantalum film with a target morphology is grown on the preset metal seed layer at a preset temperature.

[0084] Among them, since the lattice constant of the preset metal seed layer is closer to that of the α-phase tantalum film and differs greatly from that of the β-phase tantalum film, the lattice constant of the tantalum film grown on the preset metal seed layer will be close to that of the preset metal seed layer, that is, it is easier to generate the α-phase tantalum film. For example, the lattice constant of the niobium seed layer, 0.447 nm, is closer to that of the α-phase tantalum film, 0.384 nm, and differs greatly from that of the β-phase tantalum film, 0.531 nm. The lattice constant of the chromium seed layer is 0.2884 nm, which is closer to that of the α-phase tantalum film, 0.384 nm, and differs greatly from that of the β-phase tantalum film, 0.531 nm. Therefore, whether growing a tantalum film on a niobium seed layer or a chromium seed layer, it is easier to grow the α-phase tantalum film.

[0085] For a better illustration of the embodiments of the present application, please refer to Figure 4 as shown Figure 4 which is another electron microscope image of the tantalum film provided by the embodiments of the present application. This electron microscope image of the tantalum film Figure 2 is the electron microscope image after growing the tantalum film on the preset metal seed layer at room temperature. This room temperature is the temperature of the current indoor environment, generally between 20 degrees Celsius and 30 degrees Celsius. It can be seen that Figure 2 most of the tantalum film in the electron microscope image has shown a strip morphology, but there are still a small number of cluster morphologies 21, which means that when growing the tantalum film on the preset metal seed layer, the obtained α-phase tantalum film is not very pure and still includes some doped β-phase tantalum film.

[0086] It should be noted that the α-phase tantalum film is a stable structure, and the β-phase tantalum film is a metastable structure. The relationship between the stable structure and the metastable structure: Both states are the states of the existence of matter. The stable structure has the lowest energy and is the most stable thermodynamically. The metastable structure has a high energy and is unstable thermodynamically. The α-phase tantalum film is stable thermodynamically, and the β-phase tantalum film is metastable thermodynamically. That is, in the embodiment of the present application, high temperature can be applied during the growth of the tantalum film, so that the metastable structure of part of the β-phase tantalum film crosses the potential barrier layer to reach the stable structure of the α-phase tantalum film, that is, it is transformed from the β-phase tantalum film to the α-phase tantalum film. Therefore, in the embodiment of the present application, a preset temperature can be set. The preset temperature is a temperature not less than 300 degrees Celsius, for example, 400 degrees Celsius. That is, the preset temperature can be understood as a high temperature not less than 300 degrees Celsius. It is easy to understand that the preset temperature cannot be too high, otherwise the atomic structure of the tantalum film will be damaged. Therefore, an upper limit of the preset temperature can also be set, generally 500 degrees Celsius. In this way, when growing a tantalum film on the preset metal seed layer, applying the high temperature of the preset temperature, a tantalum film with a target morphology is obtained, that is, a high-purity α-phase tantalum film, simply referred to as the α-phase tantalum film. In this way, a quantum chip processed with the tantalum film with the target morphology can avoid generating a high two-level loss, increase the coherence time of qubits, improve the relaxation time, and improve the computing power of the quantum computer.

[0087] In some embodiments, growing a tantalum film with a target morphology on the preset metal seed layer through a preset temperature may include: growing a tantalum film with a second preset thickness and a target morphology on the preset metal seed layer through a second preset coating power, a second preset argon flow rate, a second preset target-substrate distance, and a preset temperature.

[0088] In the embodiment of the present application, the second preset coating power is the coating power preset manually to achieve the growth of a stable tantalum film with a target morphology. For example, it can be 170 watts. The second preset argon flow rate is the argon flow rate preset manually to achieve the growth of a stable tantalum film with a target morphology. For example, it can be 10 standard cubic centimeters per minute. The second preset target-substrate distance is the target-substrate distance preset manually to achieve the growth of a stable tantalum film with a target morphology. For example, it can be 100 mm (millimeters). The second preset thickness is the thickness preset manually to achieve a stable tantalum film with a target morphology. For example, it can be 200 nm. The preset temperature is the temperature preset manually to achieve the growth of a tantalum film with a high-purity target morphology. For example, it can be a high temperature between [300, 500] degrees Celsius. The upper limit of 500 degrees Celsius is limited to avoid damaging the structure of the tantalum film when exceeding 500 degrees Celsius.

[0089] Thus, a stable and high-purity tantalum film of a second preset thickness of a target shape can be grown on the preset metal seed layer by a second preset coating power, a second preset argon gas flow rate, a second preset target-substrate distance and a preset temperature. For example, a stable and high-purity tantalum film of a second preset thickness of a target shape of 200 nm can be grown by a second preset coating power of 170 watts, a second preset argon gas flow rate of 10 standard cubic centimeters per minute, a second preset target-substrate distance of 100 millimeters and a preset temperature of 400 degrees Celsius. For a better description of the embodiments of the present application, please refer to Figure 5 As shown, Figure 5 Another electron microscope image of a tantalum film according to the tantalum film growth method provided in the embodiment of the present application. Figure 3 This is the electron microscope image of a tantalum film grown on a preset metal seed layer at a preset temperature. It can be seen that the electron microscope image of the tantalum film Figure 3 In the figure, the stripe morphology is basically present, which means that the tantalum film is grown on the preset metal seed layer at the preset temperature, and the obtained α-phase tantalum film is of high purity. Therefore, the corresponding quantum chip is made based on the tantalum film of the target morphology, which avoids the generation of high two-level loss, increases the coherence time of the quantum bit, improves the relaxation time, and improves the computing power of the quantum computer.

[0090] In some embodiments, even if it is possible to determine whether it is a high-purity α-phase tantalum film from the electron microscope image of the tantalum film, visual judgment is inevitably inaccurate. In order to achieve a more accurate purity determination of the α-phase tantalum film, it can also be detected by X-ray diffraction (XRD) measurement, that is, on the preset metal seed layer, a tantalum film of a target morphology is grown at a preset temperature, which may include:

[0091] (1) growing a corresponding tantalum film on the preset metal seed layer at a preset temperature;

[0092] (2) performing X-ray diffraction measurement on the tantalum film to obtain the intensity of X-rays reflected back at different diffraction angles;

[0093] (3) When it is detected that the intensity of the X-ray reflected back at the first preset diffraction angle is the maximum, the morphology of the tantalum film is determined to be the target morphology.

[0094] Among them, the X-ray diffraction refers to a research method that analyzes the diffraction pattern of a material by performing X-ray diffraction on the material to obtain information such as the composition of the material, the structure or morphology of atoms or molecules inside the material, etc. It is used to determine the crystal structure. The crystal structure causes the incident X-ray beam to be diffracted into many specific directions. By measuring the angles of these diffracted beams and the intensity of the X-rays reflected back, a three-dimensional image of the electron density in the crystal (i.e., determining the morphology of the crystal) can be generated. The intensity of the X-rays refers to the energy of X-ray radiation passing through a unit area per unit time. It is usually expressed by the radiation amount (dose) per unit area, and the unit is Gray (Gy).

[0095] In the embodiment of the present application, taking the preset temperature of 400 degrees Celsius as an example for illustration, on the preset metal seed layer, a corresponding tantalum film is grown at 400 degrees Celsius. Correspondingly, in order to determine whether the tantalum film is a high-purity α-phase tantalum film, XRD measurement can be performed on the tantalum film, that is, the tantalum film is tested with X-rays at different diffraction angles. The diffraction angle refers to the included angle formed with the substrate. It should be noted that the α-phase tantalum film has a body-centered cubic structure, making the intensity of the X-rays reflected back at a diffraction angle of 38.23 degrees the largest. This 38.23 degrees is the first preset diffraction angle in the embodiment of the present application. Correspondingly, the β-phase tantalum film has a face-centered cubic structure, making the intensity of the X-rays reflected back at a diffraction angle of 33.7 degrees the largest.

[0096] Based on this, it can be detected whether the intensity of the X-rays reflected back at the first preset diffraction angle is the largest to determine whether the tantalum film is a high-purity α-phase tantalum film. When it is detected that the intensity of the X-rays reflected back at the first preset diffraction angle is the largest, it indicates that the morphology of the tantalum film is the target morphology, that is, a high-purity α-phase tantalum film. To better illustrate the embodiment of the present application, please refer to Figure 6 as shown Figure 6 is the X-ray diffraction pattern of the tantalum film growth method provided by the embodiment of the present application. In this X-ray diffraction Figure 4 the horizontal axis is the included angle between the X-ray and the substrate (i.e., the diffraction angle), and the vertical axis is the intensity of the X-rays reflected back detected by the detector. It can be seen from the X-ray diffraction Figure 4 that at 38.23°, the intensity of the reflected X-rays is the largest, indicating that a high-purity α-phase tantalum film is obtained.

[0097] In some embodiments, since the preset temperature represents a high temperature, the value range can be between [300, 500] degrees Celsius, that is, it represents that there can be multiple preset temperatures. That is, through the high temperatures of multiple preset temperatures, the metastable structure of the β-phase tantalum film can cross the barrier layer to reach the stable structure of the α-phase tantalum film. It should be noted that at different preset temperatures, the efficiency of the metastable structure of the β-phase tantalum film crossing the barrier layer to reach the α-phase tantalum film is different. Therefore, in order to obtain the α-phase tantalum film with the highest purity, from between [300, 500] degrees Celsius, through testing, the temperature at which the efficiency of the metastable structure of the β-phase tantalum film crossing the barrier layer to reach the α-phase tantalum film is the highest can be obtained. As Figure 7 shown, the specific testing process is as follows:

[0098] In step 203, a corresponding test preset metal seed layer is grown on the test substrate;

[0099] In step 204, different test temperatures are sequentially selected from the target temperature range, and test tantalum films corresponding to different test temperatures are grown on the test preset metal seed layer;

[0100] In step 205, according to the first preset diffraction angle, X-ray diffraction measurement is performed on each test tantalum film to obtain the test intensity of the X-ray reflected by each test tantalum film at the first preset diffraction angle;

[0101] In step 206, the test temperature corresponding to the test tantalum film with the maximum test intensity is determined as the preset temperature.

[0102] Among them, the test substrate and the foregoing substrate are of the same material, that is, it can be a silicon substrate. The test preset metal seed layer and the foregoing preset metal seed layer are of the same material, that is, the preset metal can be niobium or chromium. In this way, a corresponding test preset metal seed layer can be grown on the test substrate first. The absolute value of the difference between the lattice constant of the test preset metal seed layer and the lattice constant of the test substrate is also greater than the preset threshold, that is, the lattice constant of the test preset metal seed layer needs to be closer to the lattice constant of the α-phase tantalum film. Since the lattice constant of the test substrate is closer to the lattice constant of the β-phase tantalum film, therefore, the difference between the lattice constant of the test preset metal seed layer and the lattice constant of the test substrate will be greater than a certain threshold, that is, the preset threshold. The preset threshold is the critical value for defining the difference and can be 0.6 nm or 0.7 nm.

[0103] Furthermore, the range of the target temperature interval is between [300, 500] degrees Celsius. To achieve the test and select the most suitable preset temperature, different test temperatures need to be sequentially selected from this target temperature interval. That is, starting from 300 degrees Celsius, 300 degrees Celsius is sequentially selected as the test temperature, 301 degrees Celsius as the test temperature, and so on, until 500 degrees Celsius is selected as the test temperature. There can be 201 such test temperatures.

[0104] On this basis, at each test temperature, test tantalum films corresponding to different test temperatures can be grown on the test preset metal seed layer. That is, 201 test substrates need to be prepared, and corresponding test preset metal seed layers are grown on each set of test substrates. Then, at each test temperature, test tantalum films corresponding to different test temperatures are grown on the test preset metal seed layers grown on each test substrate, obtaining 201 test tantalum films.

[0105] It is easy to understand that at different test temperatures, the efficiency of the metastable structure of the β-phase tantalum film crossing the barrier layer to reach the α-phase tantalum film is different. Therefore, the 201 test tantalum films can be detected. Specifically, X-ray diffraction measurements are performed on each test tantalum film according to the first preset diffraction angle of 38.23 degrees to obtain the test intensity of the X-rays reflected back by each test tantalum film at the first preset diffraction angle. It should be noted that since the test intensity of the X-rays reflected back at the diffraction angle of 38.23 degrees represents the purity of the α-phase tantalum film, the higher the purity of the α-phase tantalum film, the greater the test intensity of the X-rays reflected back at the diffraction angle of 38.23 degrees.

[0106] Therefore, the test tantalum film with the maximum test intensity can be used as the α-phase tantalum film with the highest purity, and the test temperature of this test tantalum film with the maximum test intensity is the most suitable preset temperature. For example, when 400 degrees Celsius is used as the test temperature, the test intensity of the obtained tantalum film is the largest. Therefore, 400 degrees Celsius can be used as the preset temperature. In this way, in the actual production of quantum chips, on the preset metal seed layer, the α-phase tantalum film with the highest purity can be grown at this most suitable preset temperature, which can avoid the relatively high two-level loss in the subsequent processed quantum chips, increase the coherence time of the qubits, improve the relaxation time, and enhance the computing power of the quantum computer.

[0107] As can be seen from the above, in the embodiment of the present application, a corresponding preset metal seed layer is grown on a substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; on the preset metal seed layer, a tantalum film with a target morphology is grown at a preset temperature not less than 300 degrees Celsius. In this way, by adding a layer of preset metal seed layer on the substrate, it is possible to grow a tantalum film with a lattice constant close to that of the preset metal seed layer in the subsequent process, rather than a tantalum film with a lattice constant close to that of the substrate. And by applying high temperature to grow the tantalum film on the preset metal seed layer, a tantalum film with a target morphology is obtained. Compared with the solution of directly growing a tantalum film on a sapphire substrate to prepare a quantum chip in the related art, the tantalum film with a target morphology obtained in the present application can reduce the interaction with microwaves in the quantum chip, so as to reduce two-level loss, increase the coherence time of qubits, and further improve the relaxation time and increase the computing power of the quantum computer.

[0108] Combined with the method described in the above embodiments, the following will give further detailed examples for illustration.

[0109] In this embodiment, it will be described by taking the specific integration of the tantalum film growth device in a computer device as an example. The computer device can control a corresponding vacuum electron beam coating machine to perform coating operations.

[0110] To better illustrate the embodiments of the present application, please refer to Figure 8 , Figure 8 which is another schematic flowchart of the tantalum film growth method provided by the embodiments of the present application. It includes:

[0111] In step 301, a corresponding test preset metal seed layer is grown on a test substrate, different test temperatures are sequentially selected from a target temperature range, and test tantalum films corresponding to different test temperatures are grown on the test preset metal seed layer.

[0112] Among them, taking the test substrate as a silicon substrate as an example for illustration, and taking the test preset metal seed layer as a niobium seed layer as an example for illustration. In this way, a corresponding test niobium seed layer can be grown on the test silicon substrate first. The lattice constant of the test silicon substrate is 0.543 nm, the lattice constant of the test niobium seed layer is 0.447 nm, the tantalum film has two morphologies, namely the α-phase and the β-phase. The lattice constant of the α-phase tantalum film is 0.384 nm, and the lattice constant of the β-phase tantalum film is 0.531 nm.

[0113] That is, the lattice constant of the tested niobium seed layer is closer to the lattice constant of the α-phase tantalum film, while the lattice constant of the tested silicon substrate is closer to the lattice constant of the β-phase tantalum film. Therefore, the difference between the lattice constant of the tested niobium seed layer and the lattice constant of the tested silicon substrate will be greater than a certain threshold, that is, the preset threshold, and this preset threshold is the critical value for defining the difference, which can be 0.6 nm or 0.7 nm.

[0114] The range of the target temperature interval is between [300, 500] degrees Celsius. In order to achieve the test and select the most suitable preset temperature, different test temperatures need to be sequentially selected from this target temperature interval, that is, starting from 300 degrees Celsius, 300 degrees Celsius is sequentially selected as the test temperature, 301 degrees Celsius is selected as the test temperature, and so on, until 500 degrees Celsius is selected as the test temperature. There can be 201 such test temperatures.

[0115] On this basis, at each test temperature, test tantalum films corresponding to different test temperatures can be grown on the tested niobium seed layer. That is, 201 test silicon substrates need to be prepared, and corresponding tested niobium seed layers are grown on each set of test silicon substrates. Then, at each test temperature, test tantalum films corresponding to different test temperatures are grown on the tested niobium seed layers grown on each test silicon substrate, resulting in 201 test tantalum films.

[0116] In step 302, the server performs X-ray diffraction measurement on each test tantalum film according to the first preset diffraction angle, obtains the test intensity of the X-ray reflected by each test tantalum film at the first preset diffraction angle, and determines the test temperature corresponding to the test tantalum film with the maximum test intensity as the preset temperature.

[0117] At different test temperatures, the efficiency of the metastable structure of the β-phase tantalum film crossing the barrier layer to reach the α-phase tantalum film is different. Therefore, the 201 test tantalum films can be detected. X-ray diffraction measurement is performed on each test tantalum film according to the first preset diffraction angle of 38.23 degrees, and the test intensity of the X-ray reflected by each test tantalum film at the first preset diffraction angle is obtained. It should be noted that since the test intensity of the X-ray reflected at the diffraction angle of 38.23 degrees represents the purity of the α-phase tantalum film, the higher the purity of the α-phase tantalum film, the greater the test intensity of the X-ray reflected at the diffraction angle of 38.23 degrees.

[0118] Therefore, the test tantalum film with the maximum test intensity can be regarded as the tantalum film of the α-phase with the highest purity. The test temperature of the test tantalum film with the maximum test intensity is the most appropriate preset temperature. For example, when 350 degrees Celsius is used as the test temperature, the test intensity of the measured tantalum film obtained is the largest. Therefore, this 350 degrees Celsius can be used as the preset temperature. In this way, in the actual production of quantum chips, on the niobium seed layer, the tantalum film of the α-phase with the highest purity can be grown at this most appropriate preset temperature, which can avoid the higher two-level loss generated by the subsequent processed quantum chips, increase the coherence time of the qubits, improve the relaxation time, and enhance the computing power of the quantum computer.

[0119] In step 303, a preset metal seed layer with a first preset thickness is grown on the substrate through a first preset coating power, a first preset argon flow rate, and a first preset target-substrate distance.

[0120] Among them, taking the test substrate as a silicon substrate as an example for illustration, and taking the preset metal seed layer as a niobium seed layer as an example for illustration, the first preset coating power is the coating power artificially preset to achieve stable growth of the niobium seed layer. For example, it can be 190 watts. The first preset argon flow rate is the argon flow rate artificially preset to achieve stable growth of the niobium seed layer. For example, it can be 2.5 standard cubic centimeters per minute. The first preset target-substrate distance is the target-substrate distance artificially preset to achieve stable growth of the niobium seed layer. For example, it can be 100 mm (millimeters). The first preset thickness is the thickness artificially preset to achieve a stable niobium seed layer. For example, it can be 2 nm. In this way, in the actual quantum chip processing process, a stable niobium seed layer with a first preset thickness of 2 nm can be grown on the silicon substrate through a first preset coating power of 190 watts, a first preset argon flow rate of 2.5 standard cubic centimeters per minute, and a first preset target-substrate distance of 100 millimeters.

[0121] In step 304, on the preset metal seed layer, a tantalum film with a second preset thickness and a target morphology is grown through a second preset coating power, a second preset argon flow rate, a second preset target-substrate distance, and a preset temperature.

[0122] Among them, the second preset coating power is the coating power artificially preset to achieve stable growth of the tantalum film with the target morphology. For example, it can be 170 watts. The second preset argon flow rate is the argon flow rate artificially preset to achieve stable growth of the tantalum film with the target morphology. For example, it can be 10 standard cubic centimeters per minute. The second preset target-substrate distance is the target-substrate distance artificially preset to achieve stable growth of the tantalum film with the target morphology. For example, it can be 100 mm (millimeters). The second preset thickness is the thickness artificially preset to achieve stable growth of the tantalum film with the target morphology. For example, it can be 200 nm. The preset temperature is the temperature for achieving the growth of the tantalum film with the target morphology of high purity. Through the previous temperature test, it can be 350 degrees Celsius.

[0123] In this way, a stable tantalum film with the highest purity and a second preset thickness of 200 nm in the target form can be grown at a second preset coating power of 170 W, a second preset argon flow rate of 10 standard cubic centimeters per minute, a second preset target-substrate distance of 100 mm, and a preset temperature of 350 °C. Based on this, a corresponding quantum chip can be fabricated using the tantalum film in the target form, which can maximally avoid generating a high two-level loss, increase the coherence time of qubits, improve the relaxation time, and enhance the computing power of the quantum computer.

[0124] As can be seen from the above, in the embodiment of the present application, a corresponding preset metal seed layer is grown on the substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; on the preset metal seed layer, a tantalum film in the target form is grown at a preset temperature not less than 300 °C. In this way, by adding a layer of preset metal seed layer on the substrate, a tantalum film with a lattice constant close to that of the preset metal seed layer can be grown subsequently, rather than a tantalum film with a lattice constant close to that of the substrate, and a high temperature is applied on the preset metal seed layer to grow the tantalum film to obtain the tantalum film in the target form. Compared with the solution of directly growing a tantalum film on a sapphire substrate to fabricate a quantum chip in the related art, the tantalum film in the target form obtained in the present application can reduce the interaction with microwaves in the quantum chip, so as to reduce the two-level loss, increase the coherence time of qubits, and further improve the relaxation time and increase the computing power of the quantum computer.

[0125] Furthermore, in the embodiment of the present application, the preset temperature at which the metastable structure of the β-phase tantalum film crosses the potential barrier layer to reach the α-phase tantalum film with the highest efficiency can be found from different test temperatures through XRD measurement, and subsequent high-temperature treatment of the tantalum film can be realized through this preset temperature, which can further reduce the two-level loss, increase the coherence time of qubits, and further improve the relaxation time and increase the computing power of the quantum computer.

[0126] For the specific implementation of each of the above steps, reference can be made to the previous embodiments, which will not be elaborated here.

[0127] To facilitate better implementation of the tantalum film growth method provided by the embodiment of the present application, the embodiment of the present application also provides a device based on the above tantalum film growth method. The meanings of the terms are the same as those in the above tantalum film growth method, and the specific implementation details can refer to the description in the method embodiment.

[0128] Please refer to Figure 9 , Figure 9Schematic structural diagram of the tantalum film growth device provided by an embodiment of this application. This tantalum film growth device is applied to a computer device, which can control a corresponding vacuum electron beam coating machine to perform coating operations. The tantalum film growth device may include a first growth unit 401, a second growth unit 402, etc.

[0129] The first growth unit 401 is used to grow a corresponding preset metal seed layer on a substrate.

[0130] Wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold.

[0131] In some embodiments, the preset metal in the preset metal seed layer is niobium. The first growth unit 401 is used for:

[0132] Growing a preset metal seed layer with a first preset thickness on the substrate through a first preset coating power, a first preset argon gas flow rate, and a first preset target-substrate distance.

[0133] In some embodiments, the first preset coating power is 190 watts, the first preset argon gas flow rate is 2.5 standard cubic centimeters per minute, the first preset target-substrate distance is 100 millimeters, and the first preset thickness is 2 nanometers.

[0134] The second growth unit 402 is used to grow a tantalum film with a target morphology on the preset metal seed layer through a preset temperature, and the preset temperature is not less than 300 degrees Celsius.

[0135] In some embodiments, the second growth unit 402 is used for:

[0136] Growing a tantalum film with a target morphology and a second preset thickness on the preset metal seed layer through a second preset coating power, a second preset argon gas flow rate, a second preset target-substrate distance, and a preset temperature.

[0137] In some embodiments, the second preset coating power is 170 watts, the second preset argon gas flow rate is 10 standard cubic centimeters per minute, the second preset target-substrate distance is 100 millimeters, and the second preset thickness is 200 nanometers.

[0138] In some embodiments, the value of the preset temperature ranges from 300 degrees Celsius to 500 degrees Celsius.

[0139] In some embodiments, the second growth unit 402 is further used for:

[0140] Growing a corresponding tantalum film on the preset metal seed layer through a preset temperature;

[0141] The tantalum film is subjected to X-ray diffraction measurement to obtain the intensities of the X-rays reflected at different diffraction angles;

[0142] When the intensity of the X-rays reflected at the first preset diffraction angle is detected to be the maximum, it is determined that the morphology of the tantalum film is the target morphology.

[0143] In some embodiments, the first preset diffraction angle is a diffraction angle of 38.23 degrees formed with the substrate.

[0144] In some embodiments, the target morphology is the alpha phase.

[0145] In some embodiments, the apparatus further includes a testing unit (not labeled) for:

[0146] Growing a corresponding test preset metal seed layer on the test substrate;

[0147] Sequentially selecting different test temperatures from the target temperature range, and growing corresponding test tantalum films at different test temperatures on the test preset metal seed layer;

[0148] According to the first preset diffraction angle, perform X-ray diffraction measurement on each test tantalum film to obtain the test intensity of the X-rays reflected by each test tantalum film at the first preset diffraction angle;

[0149] Determine the test temperature corresponding to the test tantalum film with the maximum test intensity as the preset temperature.

[0150] In some embodiments, the range of the target temperature range is from 300 degrees Celsius to 500 degrees Celsius.

[0151] In some embodiments, the substrate is a silicon substrate.

[0152] For the specific implementation of each of the above units, reference may be made to the previous embodiments and will not be elaborated here.

[0153] As described above, in the embodiment of the present application, the first growth unit 401 grows a corresponding preset metal seed layer on the substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; the second growth unit 402 grows a tantalum film with a target morphology on the preset metal seed layer at a preset temperature not less than 300 degrees Celsius. In this way, by adding a layer of preset metal seed layer on the substrate, it is possible to grow a tantalum film with a lattice constant close to that of the preset metal seed layer in the subsequent process, rather than a tantalum film with a lattice constant close to that of the substrate. And by applying high temperature to grow the tantalum film on the preset metal seed layer, a tantalum film with a target morphology is obtained. Compared with the related technology of directly growing a tantalum film on a sapphire substrate to prepare a quantum chip, the tantalum film with a target morphology obtained in the present application can reduce the interaction with microwaves in the quantum chip, so as to reduce two-level loss, increase the coherence time of qubits, and further improve the relaxation time and increase the computing power of the quantum computer.

[0154] For the specific implementation of each of the above units, reference may be made to the previous embodiments and will not be elaborated here.

[0155] Refer to Figure 10 , Figure 10 FIG. is a block diagram of a part of the structure of the terminal 140 according to an embodiment of the present disclosure. The terminal 140 includes: a Radio Frequency (RF) circuit 510, a memory 515, an input unit 530, a display unit 540, a sensor 550, an audio circuit 560, a wireless fidelity (WiFi) module 570, a processor 580, and a power supply 590, etc. Those skilled in the art can understand that Figure 10 The structure of the terminal 140 shown does not limit the mobile phone or computer, and may include more or fewer components than shown, or combine certain components, or have different component arrangements.

[0156] The RF circuit 510 can be used for receiving and sending signals during information reception or call processes. Specifically, after receiving the downlink information of the base station, it is given to the processor 580 for processing; in addition, the uplink data designed is sent to the base station.

[0157] The memory 515 can be used to store software programs and modules. The processor 580 executes various functional applications and data processing of the terminal by running the software programs and modules stored in the memory 515.

[0158] The input unit 530 can be used to receive input digital or character information, and generate key signal inputs related to the settings and function controls of the terminal. Specifically, the input unit 530 may include a touch panel 531 and other input devices 532.

[0159] The display unit 540 can be used to display the input information or the provided information and various menus of the terminal. The display unit 540 may include a display panel 541.

[0160] The audio circuit 560, the speaker 561, and the microphone 562 can provide an audio interface.

[0161] In this embodiment, the processor 580 included in the terminal 140 can execute the tantalum film growth method of the previous embodiment, for example:

[0162] Grow a corresponding preset metal seed layer on the substrate;

[0163] Wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold;

[0164] On the preset metal seed layer, grow a tantalum film with a target morphology at a preset temperature, and the preset temperature is not less than 300 degrees Celsius.

[0165] The terminal 140 of the embodiments of the present disclosure includes, but is not limited to, mobile phones, computers, intelligent voice interaction devices, smart home appliances, vehicle-mounted terminals, aircraft, etc. The embodiments of the present invention can be applied to various scenarios, including but not limited to cloud technology, artificial intelligence, intelligent transportation, assisted driving, etc.

[0166] Figure 11 It is a structural block diagram of a part of the server 110 for implementing the embodiments of the present disclosure. The server 110 may vary greatly due to configuration or performance differences, and may include one or more central processing units (Central Processing Units, abbreviated as CPUs) 622 (for example, one or more processors) and a memory 632, and one or more storage media 630 for storing application programs 642 or data 644 (for example, one or more mass storage devices). Among them, the memory 632 and the storage media 630 can be transient storage or persistent storage. The programs stored in the storage media 630 may include one or more modules (not shown in the figure), and each module may include a series of instruction operations on the server 600. Further, the central processing unit 622 can be set to communicate with the storage media 630 and execute a series of instruction operations in the storage media 630 on the server 600.

[0167] The server 600 may further include one or more power supplies 626, one or more wired or wireless network interfaces 650, one or more input / output interfaces 658, and / or one or more operating systems 641, such as Windows ServerTM, Mac OS XTM, UnixTM, LinuxTM, FreeBSDTM, etc.

[0168] The central processing unit 622 in the server 600 can be used to execute the tantalum film growth method of the embodiments of the present disclosure. For example:

[0169] Grow a corresponding preset metal seed layer on the substrate;

[0170] Wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold;

[0171] On the preset metal seed layer, grow a tantalum film with a target morphology at a preset temperature, and the preset temperature is not less than 300 degrees Celsius.

[0172] The embodiments of the present disclosure also provide a computer-readable storage medium, which is used to store program codes, and the program codes are used to execute the tantalum film growth methods of the foregoing embodiments.

[0173] The embodiments of the present disclosure also provide a computer program product, which includes a computer program. The processor of the computer device reads and executes the computer program, so that the computer device executes to implement the above-mentioned tantalum film growth method. For example:

[0174] Grow a corresponding preset metal seed layer on the substrate;

[0175] Wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold;

[0176] On the preset metal seed layer, grow a tantalum film with a target morphology at a preset temperature, and the preset temperature is not less than 300 degrees Celsius.

[0177] In addition, the terms "include" and "comprise" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0178] It should be understood that in this disclosure, "at least one (item)" means one or more, and "a plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that there can be three relationships. For example, "A and / or B" can mean: only A exists, only B exists, and both A and B exist at the same time. Among them, A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (individual) of the following" or similar expressions refer to any combination of these items, including any combination of single items (individuals) or plural items (individuals). For example, at least one (individual) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a, b, and c", where a, b, and c can be single or multiple.

[0179] It should be understood that in the description of the embodiments of this disclosure, the meaning of "a plurality (or multiple items)" is more than two. Understandings such as greater than, less than, exceeding, etc. do not include the present number, and understandings such as above, below, within, etc. include the present number.

[0180] In several embodiments provided in this disclosure, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there can be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection to each other can be through some interfaces, and the indirect coupling or communication connection of devices or units can be in electrical, mechanical, or other forms.

[0181] The units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they can be located in one place, or they can be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0182] In addition, the functional units in each embodiment of this disclosure can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated units can be implemented in the form of hardware or in the form of software functional units.

[0183] When the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present disclosure, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present disclosure. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks, or optical discs that can store program codes.

[0184] It should also be understood that the various embodiments provided in the present disclosure can be combined arbitrarily to achieve different technical effects.

[0185] In the embodiments of the present application, the term "module" or "unit" refers to a computer program with a predetermined function or a part of a computer program, which works together with other related parts to achieve a predetermined goal, and can be implemented in whole or in part by using software, hardware (such as a processing circuit or a memory), or a combination thereof. Similarly, a processor (or multiple processors or memories) can be used to implement one or more modules or units. In addition, each module or unit can be a part of the overall module or unit that includes the function of the module or unit.

[0186] The above is a specific description of the embodiments of the present disclosure, but the present disclosure is not limited to the above embodiments. Those skilled in the art can also make various equivalent deformations or substitutions without departing from the spirit of the present disclosure, and these equivalent deformations or substitutions are all included within the scope defined by the claims of the present disclosure.

Claims

1. A method for growing a tantalum film, characterized in that, it includes: growing a corresponding preset metal seed layer on a substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; on the preset metal seed layer, growing a tantalum film with a target morphology at a preset temperature, and the preset temperature is not less than 300 degrees Celsius.

2. The method for growing a tantalum film according to claim 1, characterized in that, the growing a tantalum film with a target morphology on the preset metal seed layer at a preset temperature includes: growing a corresponding tantalum film on the preset metal seed layer at a preset temperature; performing X-ray diffraction measurement on the tantalum film to obtain the intensity of the X-rays reflected at different diffraction angles; when it is detected that the intensity of the X-rays reflected at a first preset diffraction angle is the maximum, determining that the morphology of the tantalum film is the target morphology.

3. The method for growing a tantalum film according to claim 2, characterized in that, the first preset diffraction angle is a diffraction angle of 38.23 degrees formed with the substrate.

4. The method for growing a tantalum film according to claim 2, characterized in that, the target morphology is the alpha phase.

5. The method for growing a tantalum film according to claim 1, characterized in that, the preset metal in the preset metal seed layer is niobium, and the growing a corresponding preset metal seed layer on the substrate includes: growing a preset metal seed layer with a first preset thickness on the substrate through a first preset coating power, a first preset argon flow rate, and a first preset target-substrate distance.

6. The method for growing a tantalum film according to claim 5, characterized in that, the first preset coating power is 190 watts, the first preset argon flow rate is 2.5 standard cubic centimeters per minute, the first preset target-substrate distance is 100 millimeters, and the first preset thickness is 2 nanometers.

7. The method for growing a tantalum film according to claim 1, characterized in that, the growing a tantalum film with a target morphology on the preset metal seed layer at a preset temperature includes: growing a tantalum film with a target morphology and a second preset thickness on the preset metal seed layer through a second preset coating power, a second preset argon flow rate, a second preset target-substrate distance, and a preset temperature.

8. The method for growing a tantalum film according to claim 7, characterized in that, the second preset coating power is 170 watts, the second preset argon flow rate is 10 standard cubic centimeters per minute, the second preset target-substrate distance is 100 millimeters, and the second preset thickness is 200 nanometers.

9. The method for growing a tantalum film according to claim 7, characterized in that, the value range of the preset temperature is between 300 degrees Celsius and 500 degrees Celsius.

10. The method for growing a tantalum film according to claim 1, characterized in that, the method further includes: growing a corresponding test preset metal seed layer on a test substrate; sequentially selecting different test temperatures from a target temperature range, and growing corresponding test tantalum films at different test temperatures on the test preset metal seed layer; Perform X-ray diffraction measurements on each test tantalum film according to a first preset diffraction angle to obtain the test intensity of the X-rays reflected by each test tantalum film at the first preset diffraction angle; Determine the test temperature corresponding to the test tantalum film with the maximum test intensity as the preset temperature.

11. The tantalum film growth method according to claim 10, characterized in that, The range of the target temperature range is from 300 degrees Celsius to 500 degrees Celsius.

12. The tantalum film growth method according to claim 1, characterized in that, The substrate is a silicon substrate.

13. A tantalum film growth device, characterized in that, comprising: A first growth unit for growing a corresponding preset metal seed layer on a substrate; wherein, the absolute value of the difference between the lattice constant of the preset metal seed layer and the lattice constant of the substrate is greater than a preset threshold; A second growth unit for growing a tantalum film with a target morphology on the preset metal seed layer at a preset temperature not less than 300 degrees Celsius.

14. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores multiple instructions, and the instructions are suitable for being loaded by a processor to execute the tantalum film growth method according to any one of claims 1 to 12.

15. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, the tantalum film growth method according to any one of claims 1 to 12 is implemented.

16. A computer program product comprising a computer program or instruction, characterized in that, When the computer program or instruction is executed by a processor, the tantalum film growth method according to any one of claims 1 to 12 is implemented.

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