Wafer processing device

Abstract

The invention provides a wafer processing device. The wafer processing device comprises an outer shell, a reaction chamber, a wafer conveying channel and a gate valve, wherein the reaction chamber is formed in the outer shell and used for processing wafers; the wafer conveying channel is formed in the outer shell and communicated with the reaction chamber; and the gate valve is configured to open and close the wafer conveying channel. According to the invention, the wafer conveying distance is shortened, the operation time before the reaction process is shortened, and the working efficiency and stability of the CVD equipment are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer processing, and more specifically, to a wafer processing apparatus. Background Art

[0002] CVD (Chemical Vapor Deposition) is a technology that forms solid deposits on the gas phase or gas-solid interface through chemical reactions of gaseous or vapor-state chemical substances in a reaction chamber (Chamber) by using various energy sources such as heating, plasma excitation, or light radiation. Simply put, two or more gaseous raw materials are introduced into a reaction chamber, and then they react with each other to form a new material, which is deposited on the surface of the wafer.

[0003] In existing CVD equipment, wafers are transported through a horizontal channel connecting the outside and the reaction chamber. At the outer end of the transport channel connected to the outside, there is a gate valve for wafers to enter and exit, which is in the form of a block and has a large volume, occupying a considerable amount of space. After the gate valve is opened, the wafer enters the reaction chamber through the gate valve and the transport channel, with a long path and a long time for transporting the wafer, increasing the operation time before the reaction process. At the same time, it will bring more impurity particles (Particle), resulting in low working efficiency and low stability of the entire CVD equipment. Summary of the Invention

[0004] In view of the above problems, an object of the present invention is to provide a wafer processing apparatus, in which the inlet and outlet gate valve is arranged inside the wafer transport channel, inserted into the wafer transport channel to close the channel, shortening the wafer transport path, reducing the operation time before the reaction process, and improving the working efficiency and stability of the wafer processing apparatus.

[0005] A wafer processing apparatus provided by the present invention includes an outer housing, a reaction chamber formed in the outer housing for processing wafers, a wafer transport channel formed on the outer housing and communicating with the reaction chamber, and a gate valve embedded in the outer housing and integrated with the outer housing;

[0006] The gate valve is configured to open and close the wafer transport channel.

[0007] The gate valve includes a driving component and a door panel connected to the driving component, and the driving component drives the door panel to open and close the wafer transport channel.

[0008] The driving component is arranged on the lower side of the outer housing, and a heat insulation pad is provided on the top surface where the driving component contacts the outer housing.

[0009] The driving component includes a bottom box and a lifter disposed within the bottom box, and the lifter is connected to the door panel.

[0010] The lifter includes an electric cylinder and a lifting column. The electric cylinder is fixed to the bottom of the bottom box, and the lifting column passes through the center of the top of the bottom box and is connected to the door panel.

[0011] The top of the bottom box is fitted to the lower side of the outer housing, and the lifting column passes through the outer housing and is connected to the door panel;

[0012] The heat insulation pad is laid on the upper side of the top of the bottom box.

[0013] The upper end of the lifting column is connected to the side of the door panel facing the outside of the wafer transfer channel.

[0014] A notch adapted to the thickness of the door panel is provided at the bottom of the wafer transfer channel. After the door panel moves downward, it enters the notch and does not protrude above the notch.

[0015] The stroke of the driving component is not less than the height of the wafer transfer channel.

[0016] The width of the door panel is the same as the width of the wafer transfer channel.

[0017] The area of the door panel is larger than the cross-sectional area of the wafer transfer channel. A receiving groove capable of accommodating the edge of the door panel is provided on the peripheral wall of the wafer transfer channel.

[0018] With the above-mentioned wafer processing device according to the present invention, a gate valve is provided inside the outer housing. The gate valve closes and opens within the wafer transfer channel, occupying the space inside the wafer transfer channel and no longer occupying the space outside the wafer transfer channel. The wafer transfer path is only inside the wafer transfer channel, and there is no valve provided outside the wafer transfer channel. The present invention shortens the distance and time of wafer transportation, shortens the operation time before the reaction process, reduces the particles brought during wafer transportation, reduces the useless space of the reaction process, maintains the purity and stability of the reaction process, and improves the working efficiency and product quality of the entire wafer processing device.

[0019] To achieve the above and related purposes, one or more aspects of the present invention include features that will be described in detail hereinafter and particularly pointed out in the claims. The following description and the drawings illustrate certain exemplary aspects of the present invention in detail. However, these aspects indicate only some of the various ways in which the principles of the present invention can be used. In addition, the present invention is intended to cover all such aspects and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Other objects and results of the present invention will become more apparent and easier to understand by referring to the following description in conjunction with the accompanying drawings and the content of the claims. In the drawings:

[0021] Figure 1 is a schematic structural diagram of a CVD process equipment in the prior art;

[0022] Figure 2 is Figure 1 a side view of;

[0023] Figure 3 is a schematic structural diagram of a wafer processing apparatus according to Embodiment 1 of the present invention;

[0024] Figure 4 is Figure 3 a rear view of;

[0025] Figure 5 is Figure 4 an A-A cross-sectional view of;

[0026] Figure 6 is Figure 4 a B-B cross-sectional view of;

[0027] Figure 7 is a schematic structural diagram of a gate valve according to Embodiment 1 of the present invention;

[0028] Figure 8 is Figure 7 a C-C cross-sectional view of;

[0029] Figure 9 is a top view of a wafer processing apparatus according to Embodiment 2 of the present invention;

[0030] Figure 10 is a side view of a wafer processing apparatus according to Embodiment 2 of the present invention;

[0031] Wherein, 1 - wafer transfer channel, 2 - gate valve, 21 - driving component, 211 - electric cylinder, 212 - lifting column, 213 - bottom box, 214 - middle hole, 22 - door panel, 23 - heat insulation pad, 3 - reaction chamber, 4 - groove valve, 5 - outer housing;

[0032] In all the drawings, the same reference numerals indicate similar or corresponding features or functions. Detailed implementation manners

[0033] In the following description, for the purpose of illustration, in order to provide a comprehensive understanding of one or more embodiments, many specific details are set forth. However, it is obvious that these embodiments can also be implemented without these specific details. In other examples, well-known structures and devices are shown in block diagram form for the convenience of describing one or more embodiments

[0034] The present invention can be subjected to various changes and can have various embodiments. Specific embodiments are illustrated in the accompanying drawings and described. However, the present invention is not limited to this specific embodiment, and all changes, equivalents, and alternatives falling within the spirit and technical scope of the present invention should be understood to be included.

[0035] Ordinal terms such as first, second, etc. may be used to describe various components, but the components are not limited to these terms. These terms are only used to distinguish one component from another. For example, without departing from the scope of the claims of the present invention, the second component may be named the first component, and similarly, the first component may also be named the second component. The term "and / or" includes a combination of multiple related recited items or one of the multiple related recited items.

[0036] It should be understood that when it is mentioned that a certain component is "connected" or "contacted" with other components, this includes not only the case of directly connecting or contacting with other components, but also should be understood to include the case where there are other components in between. Conversely, when it is mentioned that a certain component is "directly connected" or "directly contacted" with other components, it should be understood that there are no other components in between.

[0037] In the description of the embodiment, when it is described that a certain component is formed "on or under" another component, "on or under" includes both cases where the two components are in direct contact with each other and cases where at least one other component is disposed between the two components. And when expressing "on" or "under", based on a certain component, it not only refers to the upper side direction, but also may include the lower side direction.

[0038] The terms used in this application are only used to describe specific embodiments and do not limit the present invention. Unless otherwise clearly specified in the context, the singular expression includes the plural expression. In this application, it should be understood that terms such as "including" or "having" are used to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the existence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0039] Unless otherwise defined, including technical terms or scientific terms, all terms used herein have the same meaning as generally understood by those skilled in the art. Terms defined in commonly used dictionaries should be interpreted to have a meaning consistent with the meaning in the context of the related technology. If not clearly defined in this application, they cannot be interpreted as ideal or overly formal meanings.

[0040] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] Figure 1 It is a schematic structural diagram of a CVD process equipment in the prior art; Figure 2 is Figure 1 side view of.

[0042] As Figure 1 and Figure 2 shown, the CVD process equipment in the prior art includes a reaction chamber 3 provided in a housing 5, a gate valve 4 is provided outside the housing 5, a horizontal wafer transfer channel 1 is formed between the reaction chamber 3 and the gate valve 4, the reaction chamber 3 and the wafer transfer channel 1 are in the housing 5, and the gate valve 4 is fixed on the rear wall of the housing 5.

[0043] After the gate valve 4 is opened, the external wafers are transported into the reaction chamber 3 through the wafer transfer channel 1. After the wafer transportation is completed, the gate valve 4 is closed and the CVD process starts. The wafer transfer path is the wafer transfer channel 1 and the gate valve 4, with a long path and a long transfer time, occupying a long operation time; the wafer transfer channel 1 is connected to the reaction chamber 3, forming a useless space during the process reaction. This part may be contaminated with particles brought in from the outside, introducing impurities and having an adverse effect on the reaction in the reaction chamber, affecting the quality of wafer processing.

[0044] Embodiment 1

[0045] Figure 3 It is a schematic structural diagram of a wafer processing apparatus according to Embodiment 1 of the present invention; Figure 4 is Figure 3 rear view of; Figure 5 is Figure 4 A - A cross-sectional view of; Figure 6 is Figure 4 B - B cross-sectional view of; Figure 7 It is a schematic structural diagram of a gate valve according to Embodiment 1 of the present invention; Figure 8 is Figure 7 C - C cross-sectional view of.

[0046] As Figures 3 - 8 collectively shown, the wafer processing apparatus proposed in this embodiment can be used for opening and closing the wafer transfer channel of wafer processing apparatuses such as CVD equipment, shortening the wafer transfer path, improving the operation efficiency, and reducing the impurities remaining in the wafer transfer channel.

[0047] The wafer processing apparatus of this embodiment mainly includes an outer housing 5, a reaction chamber 3 formed inside the outer housing 5 for processing wafers, a wafer transfer channel 1 formed on the outer housing 5 and communicating with the reaction chamber 3, and a gate valve 2 embedded in the outer housing 5 and integrated with the outer housing 5. The gate valve 2 is configured to open and close the wafer transfer channel 1. After the gate valve 2 is opened, the wafer transfer channel 1 is opened, and after the gate valve 2 is closed, the wafer transfer channel 1 is closed.

[0048] In this embodiment, the slot valve at the rear of the original outer housing 5 of the wafer processing apparatus is removed, and a gate valve 2 integrated with the outer housing 5 is added. The gate valve 2 is inserted into the inside of the wafer transfer channel 1 inside the outer housing 5 to realize the opening and closing of the wafer transfer channel 1 as an inlet / outlet valve. During the transfer process, when the gate valve 2 is opened, the wafer directly enters the wafer transfer channel 1 without having to pass through the slot valve on the outer housing 5 (such as Figure 1 and Figure 2 shown), greatly shortening the wafer transfer distance.

[0049] Since the gate valve 2 blocks inside the wafer transfer channel 1 after being closed, the distance from the gate valve 2 to the reaction chamber 3 is reduced, and the communicating space between the wafer transfer channel 1 and the reaction chamber 3 is reduced, thereby reducing the process reaction space and increasing the stability and efficiency of the process reaction.

[0050] The form of the gate valve 2 can be an insertion type. For example, the gate valve 2 is inserted into the inside of the wafer transfer channel 1 from the side wall of the wafer transfer channel 1 to close the wafer transfer channel 1. After the gate valve 2 is closed, it is inserted inside the wafer transfer channel 1, and after being opened, it withdraws from the wafer transfer channel 1. The insertion type gate valve can insert into the cross-section of the wafer transfer channel 1 to form a block, without occupying external space, and also reducing the communicating space between the wafer transfer channel 1 and the reaction chamber 3, increasing the stability of the process.

[0051] During wafer transfer, the gate valve 2 passes through the side wall of the wafer transfer channel 1 and withdraws outside the wafer transfer channel 1. After the wafer transfer is completed, the gate valve 2 is inserted into the inside from the side wall of the wafer transfer channel 1 to completely block the wafer transfer channel 1.

[0052] The gate valve 2 provided inside the wafer transfer channel 1 can more tightly block the wafer transfer channel 1, preventing external particles from entering the wafer transfer channel 1. The shortening of the wafer transfer path can also reduce the introduction of external particles and reduce the particles remaining in the wafer transfer channel 1, increasing the sealing performance and purity of the process reaction.

[0053] The gate valve 2 inserted into the wafer transfer channel 1 does not occupy the rear space of the outer housing 5, reducing the overall width and occupied space of the equipment.

[0054] In this embodiment, the gate valve 2 may include a driving component 21 and a door panel 22 connected to the driving component 21. The driving component 21 drives the door panel 22 to open and close the wafer transfer channel 1.

[0055] The door panel 22 is perpendicular to the wafer transfer channel 1. The driving component 21 drives the door panel 22 to move upward, and the door panel 22 is inserted into the wafer transfer channel 1. The door panel 22 completely blocks the wafer transfer channel 1. The driving component 21 drives the door panel 22 to move downward, and the door panel 22 withdraws from the wafer transfer channel 1.

[0056] The width of the door panel 22 can be adapted to the width of the wafer transfer channel 1, exactly blocking the width of the wafer transfer channel 1. The height of the door panel 22 is not lower than the height of the wafer transfer channel 1. After being inserted into the wafer transfer channel 1 from the lower side of the wafer transfer channel 1, it can block the height of the wafer transfer channel 1, and the door panel 22 completely blocks the cross-section of the wafer transfer channel 1.

[0057] A notch adapted to the thickness of the door panel 22 is provided at the bottom of the wafer transfer channel 1. After the door panel 22 moves downward, it enters the notch and is not higher than the notch.

[0058] A notch for the door panel 22 to move downward is opened on the lower wall of the wafer transfer channel 1. After the door panel 22 moves downward, it cannot be higher than the notch and can be located inside the outer housing 5 without interfering with the transfer of wafers. There should be a tight fit between the door panel 22 and the notch to prevent external particles from entering the wafer transfer channel 1 through the gap between the door panel 22 and the notch.

[0059] The driving component 21 functions to drive the door panel 22 to insert into and withdraw from the wafer transfer channel 1. The driving component 21 can be arranged on the lower side of the outer housing 5 of the wafer transfer channel 1, and a heat insulation pad 23 is provided on the top surface where the driving component 21 contacts the outer housing 5.

[0060] The driving component 21 is fixed to the lower side surface of the outer housing 5, no longer occupying the space at the rear of the outer housing 5, reducing the thickness of the outer housing 5 and the occupied space of the equipment.

[0061] Due to the structure of the gate valve 2 embedded in the outer housing, the driving component 21 of the gate valve 2 is closer to the reaction chamber 3. Electrical components, electronic components, etc. in the driving component 21 are more likely to be affected by the high heat of the reaction chamber 3. The high heat of the reaction chamber 3 may also cause errors in the data or signals of the controller controlling the driving component 21, malfunction, etc. To prevent the influence of high heat on the driving component 21 and to protect the driving component 21, a heat insulation pad 23 is provided on the top surface where the driving component 21 contacts the outer housing 5 to prevent the driving component 21 from being damaged by high heat.

[0062] Such as Figure 7 and Figure 8 As shown, specifically, in this embodiment, the driving component 21 includes a bottom box 213 and a lifter arranged in the bottom box 213, and the lifter is connected to the door panel 22.

[0063] The bottom box 213 can be a cubic box body. An elevator is fixed in the bottom box 213. The elevator drives the door panel 22 to move up and down, thereby driving the door panel 22 to close and open the wafer transfer channel 1.

[0064] Specifically, the elevator can include an electric cylinder 211 and a lifting column 212. The electric cylinder 211 is fixed at the bottom of the bottom box 213, and the lifting column 212 passes through the center of the top of the bottom box 213 and is connected to the door panel 22.

[0065] The bottom of the electric cylinder 211 is fixedly connected to the bottom of the bottom box 213, and the lifting column 212 is connected to the door panel 22. A central hole 214 for the lifting column 212 to extend out is provided at the center of the top of the bottom box 213. The lifting column 212 passes through the central hole 214 and extends out of the bottom box 213, and then is connected to the door panel 22. The lifting column 212 moves up and down in the central hole 214. The inner diameter of the central hole 214 is equal to the outer diameter of the lifting column 212.

[0066] The top of the bottom box 213 is in contact with the lower side of the outer housing 5, and the lifting column 212 passes through the outer housing 5 and is connected to the door panel 22.

[0067] The top of the bottom box 213 is closely and fixedly attached to the lower side of the outer housing 5. The electric cylinder 211 is located in the bottom box 213 and outside the outer housing 5, which is convenient for daily maintenance of the electric cylinder 211. The lifting column 212 passes through the outer housing 5 and is connected to the door panel 22, and the door panel 22 also passes through the outer housing 5. When the lifting column 212 rises, it drives the door panel 22 to insert into the wafer transfer channel 1. When the lifting column 212 descends, it drives the door panel 22 to withdraw from the wafer transfer channel 1 and retreat into the slot of the outer housing 5.

[0068] The space at the lower part of the slot can accommodate the door panel 22. After the door panel 22 retreats into the slot, the upper end of the door panel 22 can be flush with the slot, or the upper end of the door panel 22 can be slightly lower than the slot.

[0069] The stroke of the driving component 21 is not less than the height of the wafer transfer channel 1, and the stroke of the lifting column 212 is not less than the height of the wafer transfer channel 1. When the upper end of the door panel 22 is flush with the slot, the stroke of the lifting column 212 can be equal to the height of the wafer transfer channel 1. When the upper end of the door panel 22 is slightly lower than the slot, the stroke of the lifting column 212 can be greater than the height of the wafer transfer channel 1 to ensure that the door panel 22 tightly abuts against the top of the wafer transfer channel 1. The lifting column 212 can be pressed tightly against the top of the wafer transfer channel 1 under the force of hydraulic pressure.

[0070] In order to ensure a tight fit between the door panel 22 and the notch, a sealing ring is provided around the notch. The sealing ring enables the outer wall of the door panel 22 to fit tightly with the notch, ensuring a tight isolation between the inside of the wafer transfer channel 1 and the outer casing. After the door panel 22 is closed, the left and right sides and the upper side of the door panel 22 are in close contact with the inner wall of the wafer transfer channel 1, ensuring that the reaction chamber 3 and the wafer transfer channel 1 are hermetically separated after the door panel 22 is closed.

[0071] The sealing ring is a heat-resistant sealing ring.

[0072] The heat insulation pad 23 can be laid on the upper side of the top of the bottom box 213. A hole is provided in the middle of the heat insulation pad 23, and the lifting column 212 passes through the hole. The heat insulation pad 23 is located between the top of the bottom box 213 and the outer casing 5, preventing the high heat during the process from damaging the bottom box 213 and entering the bottom box 213 to damage the electric cylinder 211 and electrical components.

[0073] The upper end of the lifting column 212 can be connected to the side of the door panel 22 facing the outside of the wafer transfer channel 1. A hole for the lifting column 212 to move up and down is also provided in the outer casing 5 on the lower side of the wafer transfer channel 1.

[0074] In order to adapt to the heat of the reaction process, the material of the heat insulation pad 23 can be the same as that of the reaction chamber 3, which can be Al in this embodiment 2 O 3 。

[0075] In this embodiment, the gate valve 2 can be opened and closed in the wafer transfer channel 1, minimizing the distance between the reaction chamber 3 and the start end of wafer transfer, greatly shortening the transfer operation time, thereby improving the production efficiency of the equipment and the rapidity of the process; reducing the external particles remaining in the wafer transfer channel 1 and improving the purity of the process; the gate valve 1 is integrated with the outer casing 5, reducing the occupied space of the equipment.

[0076] Embodiment 2

[0077] Figure 9 It is a top view of the wafer processing apparatus according to Embodiment 2 of the present invention; Figure 10 It is a side view of the wafer processing apparatus according to Embodiment 2 of the present invention;

[0078] As Figure 9 and Figure 10 shown, for the wafer processing apparatus provided in this embodiment, on the basis of Embodiment 1, in order to close the wafer transfer channel 1 more tightly, the door panel 22 is inserted into the peripheral wall of the wafer transfer channel 1.

[0079] In this embodiment, the area of the door panel 22 is slightly larger than the cross-sectional area of the wafer transfer channel 1, and a receiving groove for accommodating the edge of the door panel 22 is provided on the peripheral wall of the wafer transfer channel 1.

[0080] Openings adapted to the thickness of the door panel 22 are provided at the top, left, and right of the wafer transfer channel 1. The three openings form a receiving groove connecting the top, left, and right of the wafer transfer channel 1. After the door panel 22 is lifted, the edges of the upper and side portions of the door panel 22 are located in the receiving groove.

[0081] When the door panel 22 is closed, all four sides of the door panel 22 are located outside the wall surface of the wafer transfer channel 1 and are closely fitted with the openings and notches on the wall surface.

[0082] In order to ensure a tight fit between the receiving groove and the door panel 22, sealing strips are provided at the edges of the three openings and also at the edges of the notches. The side walls of the door panel 22 are all in contact with the sealing strips. The sealing strips can make the side walls of the door panel 22 fit tightly with the receiving groove and the notches, ensuring a tight isolation between the inside of the wafer transfer channel 1 and the outer housing 5, and also ensuring that the reaction chamber 3 and the wafer transfer channel 1 are hermetically separated after the door panel 22 is closed.

[0083] The sealing strip is a heat-resistant sealing strip.

[0084] The wafer processing apparatus according to the present invention has been described above by way of example with reference to the accompanying drawings. However, those skilled in the art should understand that various improvements can be made to the above-mentioned wafer processing apparatus proposed by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the appended claims.

Claims

1. A wafer processing apparatus, characterized in that, it includes an outer housing, a reaction chamber formed within the outer housing for processing wafers, a wafer transfer channel formed on the outer housing and communicating with the reaction chamber, and a gate valve embedded in the outer housing and integrated with the outer housing; the gate valve is configured to open and close the wafer transfer channel.

2. The wafer processing apparatus according to claim 1, characterized in that, the gate valve includes a driving component and a door panel connected to the driving component, the driving component drives the door panel to open and close the wafer transfer channel.

3. The wafer processing apparatus according to claim 2, characterized in that, the driving component is disposed on the lower side of the outer housing, and a heat insulation pad is provided on the top surface where the driving component contacts the outer housing.

4. The wafer processing apparatus according to claim 2, characterized in that, the driving component includes a bottom box and a lifter disposed within the bottom box, and the lifter is connected to the door panel.

5. The wafer processing apparatus according to claim 4, characterized in that, the lifter includes an electric cylinder and a lifting column, the electric cylinder is fixed to the bottom of the bottom box, and the lifting column passes through the center of the top of the bottom box and is connected to the door panel.

6. The wafer processing apparatus according to claim 5, characterized in that, the top of the bottom box fits against the lower side of the outer housing, the lifting column penetrates the outer housing and is connected to the door panel; the heat insulation pad is laid on the upper side of the top of the bottom box.

7. The wafer processing apparatus according to claim 5, characterized in that, the upper end of the lifting column is connected to the side surface of the door panel facing the outside of the wafer transfer channel.

8. The wafer processing apparatus according to claim 2, characterized in that, a notch adapted to the thickness of the door panel is provided at the bottom of the wafer transfer channel, and after the door panel moves down, it enters the notch and does not protrude above the notch.

9. The wafer processing apparatus according to claim 2, characterized in that, the stroke of the driving component is not less than the height of the wafer transfer channel.

10. The wafer processing apparatus according to claim 2, characterized in that, the width of the door panel is the same as the width of the wafer transfer channel.

11. The wafer processing apparatus according to claim 2, characterized in that, the area of the door panel is larger than the cross-sectional area of the wafer transfer channel, and a receiving groove capable of accommodating the edge of the door panel is provided on the peripheral wall of the wafer transfer channel.

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