Conductive electrode structure, spraying device and heater

Abstract

The invention provides a conductive electrode structure, a spraying device and a heater, and the structure comprises an inner-layer electrode which is made of a non-magnetic-resistance metal material; the outer-layer electrode assembly is made of a magnetic resistance material and is fixedly arranged outside the inner-layer electrode in a sleeving manner; the inner-layer wire coil is arranged on the side face, away from the wafer, of the inner-layer electrode in the circumferential direction of the inner-layer electrode, and the current can be adjusted; the outer-layer wire coil assembly is arranged on the side face, away from the wafer, of the outer-layer electrode assembly in the circumferential direction of the outer-layer electrode assembly, and the current of the outer-layer wire coil assembly can be independently adjusted. The change of the magnetic field intensity can be adjusted by adjusting the current of the coil, the impedance distribution of the conductive electrode structure is changed, the distribution area and the distribution density of plasmas are further changed, the plasmas can be distributed in a uniform density mode, and the uniformity of the film thickness is effectively improved; in addition, the plasma can be adjusted to be basically gathered in the outer layer wire coil assembly area, so that the particles are gathered at the sheath layer of the edge, the air flow can take away all the particles, and the performance of the particles is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a conductive electrode structure, a showerhead device and a heater. Background Art

[0002] Low-temperature plasma technology is one of the key technologies in integrated circuit manufacturing processes such as etching and thin film deposition, and its uniformity has a great impact on the process quality.

[0003] When the existing metal electrodes (for example, applied to the showerhead device and heater of a plasma processing equipment) generate plasma, there will be an edge effect. The plasma concentration near the electrode edge is lower than that in the central region. Due to the lower plasma concentration in the electrode edge region, the reaction rate in the electrode edge region is slower, and the deposited film thickness is thinner; while the plasma concentration in the electrode central region is higher, the reaction rate in the electrode central region is faster, and the deposited film thickness is thicker. As a result, a problem of thick in the middle and thin at the edge occurs during the thin film deposition process of chemical vapor deposition, making the thickness uniformity (NU%) of the thin film worse, and even causing the device to be easily broken down during use, thus leading to device failure.

[0004] In addition, the distribution of plasma also affects the distribution of particles to a certain extent. After the thin film deposition is completed, the particles will be adsorbed near the sheath layer. Since the plasma concentration in the electrode edge region is lower, the particles will not be completely distributed in the edge sheath layer. When an air flow is subsequently introduced to carry away the particles, the air flow cannot effectively carry away all the particles, resulting in the lack of particle performance.

[0005] In view of this, it is necessary to propose a conductive electrode structure, a showerhead device and a heater to solve the above problems. Summary of the Invention

[0006] The purpose of the present invention is to provide a conductive electrode structure, a showerhead device and a heater to improve the problems of poor thickness uniformity of the plasma thin film deposition and poor particle performance in the prior art.

[0007] The present invention provides a conductive electrode structure, including: An inner layer electrode made of a non-magnetic resistance metal material; An outer layer electrode assembly made of a magnetoresistive material and fixedly sleeved outside the inner layer electrode; An inner layer conducting coil arranged on the side of the inner layer electrode away from the wafer along the circumferential direction of the inner layer electrode, and the current of the inner layer conducting coil can be adjusted independently; An outer layer conducting coil assembly arranged on the side of the outer layer electrode assembly away from the wafer along the circumferential direction of the outer layer electrode assembly, and the current of the outer layer conducting coil assembly can be adjusted independently.

[0008] The beneficial effects of the conductive electrode structure provided by the present invention are as follows: A hierarchical conductive electrode structure prepared from magnetoresistive materials is designed. During the process, by adjusting the magnitude of the current applied to the inner conductive coil and / or the outer conductive coil assembly, the change in magnetic field strength can be adjusted, the impedance distribution of the conductive electrode structure can be changed, and then the distribution density of the plasma can be changed. The plasma is adjusted to have a uniform density distribution in the inner electrode region and the outer electrode assembly region, so as to effectively improve the uniformity of the film thickness. After the process is completed, by adjusting the magnitude and direction of the current applied to the inner conductive coil and / or the outer conductive coil assembly, the magnetic field strength and magnetic field direction in the inner electrode region and the outer electrode assembly region can be adjusted, the impedance distribution of the conductive electrode structure can be changed, so that the inner electrode region is not affected by the magnetic field, and only the outer electrode assembly region is affected by the magnetic field. Furthermore, the distribution region of the plasma is changed, so that the plasma is adjusted to basically gather in the outer conductive coil assembly region, and then the particles gather at the edge sheath layer, so that the air flow can take all the particles away and improve the performance of the particles.

[0009] The present invention also provides a spraying device for a plasma processing apparatus, which is characterized by comprising: the conductive electrode structure in the above embodiment; The inner electrode serves as the inner main body of the spraying device; The outer electrode assembly serves as the outer main body of the spraying device.

[0010] In a possible embodiment, the outer conductive coil assembly includes at least two outer conductive coils arranged at intervals on the side of the outer electrode assembly away from the wafer along the circumferential direction of the outer electrode assembly. The current of each outer conductive coil can be independently adjusted to separately adjust the magnetic field strength of different regions on the outer electrode assembly.

[0011] The beneficial effects are as follows: Since the current of each outer conductive coil can be independently adjusted, the magnetic field strength of different regions on the outer electrode assembly can be separately adjusted in a targeted manner, so as to achieve separate and precise adjustment of the plasma distribution density of different regions on each outer electrode assembly in a targeted manner.

[0012] In a possible embodiment, the outer electrode assembly includes at least two outer electrodes made of magnetoresistive materials and fixedly sleeved layer by layer. At least one outer conductive coil is arranged on the side of each outer electrode away from the wafer, and the outer conductive coil is arranged along the circumferential direction of the corresponding outer electrode.

[0013] The beneficial effects are as follows: Since the currents of the respective outer guiding coils can be independently adjusted, the magnetic field intensities of the respective outer electrode regions can be individually adjusted accordingly, so as to individually and precisely adjust the plasma distribution density of the respective outer electrode regions.

[0014] In a possible embodiment, the widths of the respective outer electrodes are the same or different.

[0015] The beneficial effects are as follows: By reasonably setting the widths of the respective outer electrodes to meet different process requirements, the magnetic field intensities required for the respective outer electrode regions are obtained by adjusting the current, and then the impedance distributions required for the respective outer electrode regions are obtained, so as to better adjust the plasma distribution density.

[0016] In a possible embodiment, when the widths of the respective outer electrodes are different, the widths of the respective outer electrodes gradually decrease from the inside to the outside.

[0017] The beneficial effects are as follows: Since the plasma concentration in the outermost region is lower, with the design that the widths of the respective outer electrodes gradually decrease from the inside to the outside, by adjusting the current of the outer guiding coil in the corresponding region, the magnetic field intensity of the outermost outer electrode region can be finely adjusted to ensure the uniformity of the plasma distribution density.

[0018] In a possible embodiment, the materials selected for the magnetoresistive materials of the respective outer electrodes are the same or different.

[0019] The beneficial effects are as follows: According to the actual process requirements, the specific materials of the respective outer electrodes are reasonably set, so as to obtain the magnetic field intensity and the required impedance distribution for the respective outer electrode regions by adjusting the current, improving the uniformity and quality of thin film deposition.

[0020] In a possible embodiment, the outer electrode is annular and the outer diameter ranges from 30 mm to 70 mm.

[0021] In a possible embodiment, the number of turns of the respective outer guiding coils is the same or different; and / or, The ratio of the number of turns of the inner guiding coil to the number of turns of the outer guiding coil ranges from 0.2 to 5.

[0022] The beneficial effects are as follows: By adjusting the number of turns of the outer guiding coil, the magnetic field intensity and the plasma distribution density of each outer electrode region can be precisely controlled. In addition, by reasonably setting the ratio of the number of turns of the inner guiding coil to the number of turns of the outer guiding coil, while ensuring the effective adjustment of the magnetic field intensity of each outer electrode region, the requirements for fine adjustment can also be met.

[0023] In a possible embodiment, the spraying device further includes a first insulating member disposed on the side of the inner layer electrode away from the wafer and used to cover the inner layer coil; and / or, The spraying device further includes a second insulating member disposed on the side of the outer layer electrode assembly away from the wafer and used to cover the outer layer coil assembly.

[0024] The beneficial effects are as follows: By covering the inner layer coil with the first insulating member and covering the outer layer coil assembly with the second insulating member, the electric field and magnetic field are shielded by the insulation of the first insulating member and the second insulating member, and the influence of the electric field and magnetic field is mainly controlled near the sheath layer, weakening their interference with the gas flow in the pipeline and avoiding the gas dissociation phenomenon caused by the electric field effect.

[0025] The present invention also provides a heater for a plasma processing device, including: An inner layer electrode, serving as the inner layer main body of the heater, and made of a non-magnetic resistance metal material; An outer layer electrode assembly, serving as the outer layer main body of the heater, made of a magnetic resistance material and fixedly sleeved outside the inner layer electrode; An inner layer coil, disposed on the side of the inner layer electrode away from the wafer along the circumferential direction of the inner layer electrode, and the current of the inner layer coil can be adjusted independently; An outer layer coil assembly, disposed on the side of the outer layer electrode assembly away from the wafer along the circumferential direction of the outer layer electrode assembly, and the current of the outer layer coil assembly can be adjusted independently. Description of the Drawings

[0026] Figure 1 It is a sectional view of the spraying device of the plasma processing device of the present invention.

[0027] Figure 2 It is a top view of the spraying device of the plasma processing device of the present invention.

[0028] Figure 3 It is a front view of the spraying device of the plasma processing device of the present invention.

[0029] Figure 4 It is a top view of the spraying device of the plasma processing device of the present invention in an embodiment.

[0030] Figure 5 It is a sectional view of the spraying device of the plasma processing device of the present invention in an embodiment.

[0031] Figure 6 It is an effect diagram of thin film deposition in the process of the plasma processing device of the prior art.

[0032] Figure 7The figure shows the effect of thin film deposition during the process of the plasma processing equipment of the present invention.

[0033] Figure 8 The figure shows a schematic diagram of the particle distribution after the process of the plasma processing equipment of the prior art.

[0034] Figure 9 The figure shows a schematic diagram of the particle distribution after the process of the plasma processing equipment of the present invention.

[0035] Explanation of reference numerals: 100, spraying device; 110, inner electrode; 120, outer electrode assembly; 121, outer electrode; 130, inner guiding coil; 140, outer guiding coil assembly; 141, outer guiding coil; 200, wafer; 300, heater. Detailed implementation manners

[0036] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0037] In view of the problems existing in the prior art, an embodiment of the present invention provides a conductive electrode structure, which is applied to a spraying device, a heater, etc. in a plasma processing equipment. Refer to Figure 1 、 Figure 2 、 Figure 3 and Figure 7 The conductive electrode structure includes: an inner electrode 110, an outer electrode assembly 120, an inner guiding coil 130, and an outer guiding coil assembly 140. The inner electrode 110 is made of a non-magnetic resistance metal material. The outer electrode assembly 120 is made of a magnetic resistance material and is fixedly sleeved outside the inner electrode 110. The inner guiding coil 130 is arranged on the side of the inner electrode 110 away from the wafer 200 along the circumferential direction of the inner electrode 110, and the current of the inner guiding coil 130 can be adjusted independently. The outer guiding coil assembly 140 is arranged on the side of the outer electrode assembly 120 away from the wafer 200 along the circumferential direction of the outer electrode assembly 120, and the current of the outer guiding coil assembly 140 can be adjusted independently.

[0038] The present invention also provides a spraying device for a plasma processing equipment, including: the conductive electrode structure in the above embodiment, where the inner electrode 110 serves as the inner main body of the spraying device 100, and the outer electrode assembly 120 serves as the outer main body of the spraying device 100.

[0039] Ordinary magnetoresistance effect: For all non-magnetic metals, due to the influence of the Lorentz force in a magnetic field, the conduction electrons will deflect during their movement, causing the path to become a curve. This will increase the length of the electron's travel path, increase the probability of electron collisions, and thus increase the resistance of the material. For general materials, the change rate does not exceed 5% and can be ignored. In this embodiment, the inner electrode 110 is made of a non-magnetoresistive metal material to ensure that the inner electrode 110 itself will not produce a significant magnetoresistance effect due to magnetic field changes, which is beneficial to the stable control of the magnetic field in the area of the inner electrode 110. The inner electrode 110 can be made of a material with a small magnetoresistance effect, such as aluminum alloy.

[0040] Giant magnetoresistance effect: It refers to the phenomenon that the resistivity of a magnetic material changes greatly when there is an external magnetic field compared to when there is no external magnetic field. When a metal or semiconductor is in a weak magnetic field, the relative change rate of the resistance of a general magnetoresistive sensor ΔR / R(0) is proportional to the square of the magnetic induction intensity B, while in a strong magnetic field, ΔR / R(0) has a linear relationship with the magnetic induction intensity B. Therefore, the resistivity of the material can be controlled by controlling the intensity of the magnetic field. In this embodiment, the outer electrode assembly 120 is made of a magnetoresistive material, and the magnetic field intensity in the area of the outer electrode assembly 120 is adjusted by adjusting the current of the coil, and then the resistivity of the outer electrode assembly 120 is adjusted to achieve the impedance adjustment of the outer electrode assembly 120.

[0041] From the above analysis, it can be seen that in this embodiment, a coil-graded conductive electrode structure with adjustable impedance is proposed. By adjusting the magnitude of the current in the coil, the magnetic field intensity can be changed, and then the distribution density of the plasma can be affected to achieve a uniform density distribution of the plasma. Since the direction of the magnetic field is determined by the direction of the current, by changing the direction of the current in the coil, the direction of the magnetic field can be changed. According to the number of turns of the inner coil 130 and the number of turns of the outer coil assembly 140, the current of the inner coil 130 and the current of the outer coil assembly 140 are reasonably set. Through the superposition and cancellation of the magnetic fields, the area of the inner electrode 110 can be made unaffected by the magnetic field, and only the area of the outer electrode assembly 120 is affected by the magnetic field, so that the plasma is basically concentrated in the area of the outer electrode assembly 120.

[0042] During the process, by adjusting the current magnitude of the inner guiding coil 130 and / or the outer guiding coil assembly 140, the magnetic field intensity in the region of the inner electrode 110 and the region of the outer electrode assembly 120 can be adjusted, the impedance distribution of the conductive electrode structure can be changed, so that the distribution density of the plasma in the region of the inner electrode 110 and the region of the outer electrode assembly 120 is more uniform, avoiding the plasma concentration difference caused by the edge effect, making the reaction rates in the region of the inner electrode 110 and the region of the outer electrode assembly 120 during the process more uniform, and further making the thickness of the deposited thin film more uniform, effectively solving the problem that it is easy to generate a thick middle and thin edges during the existing thin film deposition process, improving the thickness uniformity (NU%) of the thin film, and further enhancing the quality and performance of the device.

[0043] Taking a capacitively coupled plasma chamber as an example, in the prior art, at high frequencies, the plasma distribution in the capacitively coupled plasma chamber usually gradually decreases from the center to the edge. This plasma distribution non-uniformity will affect the process effect, for example, the uniformity of thin film deposition and the particle distribution. In this embodiment, an impedance-adjustable coil-graded conductive electrode structure design is adopted, so that the conductivity of the region of the outer electrode assembly 120 located at the edge is greater than the conductivity of the region of the inner electrode 110 located at the center, thereby suppressing the non-uniformity of the power distribution in the radial direction of the electrode injected into the chamber and improving the radial distribution uniformity of the plasma density in the chamber.

[0044] After the process is completed, by adjusting the current magnitude and direction of the inner guiding coil 130 and / or the outer guiding coil assembly 140, the magnetic field intensity and magnetic field direction in the region of the inner electrode 110 and the region of the outer electrode assembly 120 can be adjusted, the impedance distribution of the conductive electrode structure can be changed. Due to the superposition and cancellation effects of the magnetic fields generated by each coil, the region of the inner electrode 110 is not affected by the magnetic field, only the region of the outer electrode assembly 120 is affected by the magnetic field, and then the distribution region of the plasma is changed, so that the plasma is basically concentrated in the region of the outer guiding coil assembly 140, and then the particles are concentrated at the edge sheath. Since the particles are concentrated at the edge sheath, when the plasma is disconnected, the introduced gas flow can better carry away all the particles, avoiding particle residue and greatly improving the particle performance.

[0045] For example, when there is one inner guiding coil 130 and the number of turns of the inner guiding coil 130 is 3, and the number of coils of the outer guiding coil assembly 140 is one and the number of turns of the outer guiding coil assembly 140 is 4. Therefore, as long as the current of the outer guiding coil assembly 140 is controlled to be 3 / 4 of the current of the inner guiding coil 130, and the current direction of the outer guiding coil assembly 140 is opposite to the current direction of the inner guiding coil 130, it can be ensured that only the region of the outer electrode assembly 120 located at the edge is affected by the magnetic field, while the region of the inner electrode 110 located at the center is not affected by the magnetic field.

[0046] In one embodiment, referring to Figure 4 and Figure 5 , the outer guiding coil assembly 140 includes at least two outer guiding coils 141 that are arranged along the circumferential direction of the outer electrode assembly 120 on the side of the outer electrode assembly 120 away from the wafer 200 and are spaced apart. The current of each outer guiding coil 141 can be independently adjusted to separately adjust the magnetic field intensity in different regions on the outer electrode assembly 120.

[0047] In this embodiment, by arranging a plurality of outer guiding coils 141 spaced apart on the outer electrode assembly 120, and the current of each outer guiding coil 141 can be independently adjusted, the magnetic field generated by each outer guiding coil 141 can be separately adjusted. Thus, according to the actual process requirements, the magnetic field intensity in different regions on the outer electrode assembly 120 can be separately and precisely adjusted.

[0048] In one embodiment, referring to Figure 4 , Figure 5 and Figure 9 , the outer electrode assembly 120 includes at least two outer electrodes 121 made of magnetoresistive material and fixedly sleeved layer by layer. At least one outer guiding coil 141 is arranged on the side of each outer electrode 121 away from the wafer 200, and the outer guiding coil 141 is arranged along the circumferential direction of the corresponding outer electrode 121.

[0049] In this embodiment, the outer electrode assembly 120 is composed of at least two outer electrodes 121. Each outer electrode 121 region is affected by the magnetic fields generated by the inner guiding coil 130 and each outer guiding coil 141, but the magnetic field effects generated by different coils on different outer electrode 121 regions are different. The closer the coil is to the outer electrode 121 region, the greater the magnetic field effect it has on this outer electrode 121 region; the farther the coil is from the outer electrode 121 region, the smaller the magnetic field effect it has on this outer electrode 121 region. Thus, according to the actual process requirements, when it is necessary to adjust the magnetic field of a certain outer electrode 121 region, by adjusting the current of the outer guiding coil 141 located on this outer electrode 121 region and / or the current magnitude of the outer guiding coil 141 close to this outer electrode 121 region, the magnetic field intensity of this outer electrode 121 region can be roughly adjusted. By adjusting the current magnitude of the outer guiding coil 141 farther from this outer electrode 121 region, the magnetic field intensity of this outer electrode 121 region can be finely adjusted. Therefore, by comprehensively adjusting the current magnitude of the inner guiding coil 130 and the current magnitudes of each outer guiding coil 141, the magnetic field intensity of each outer electrode 121 region can be accurately adjusted.

[0050] The magnetic field adjustment of the outer electrode region will be explained in detail below with specific examples.

[0051] Referring toFigure 4 and Figure 5 , in this example, the inner guiding coil 130 is one and located at the edge of the inner electrode 110. There are three outer electrodes 121, and one outer guiding coil 141 is arranged on each outer electrode 121. The outer guiding coil 141 is located at the edge of the corresponding outer electrode 121. The outer electrodes 121 are, from the inside out, the first outer electrode 121, the second outer electrode 121, and the third outer electrode 121 in sequence. Taking the first outer electrode 121 as an example, the magnetic field in the area of the first outer electrode 121 is more affected by the inner guiding coil 130 and the outer guiding coil 141 of the first outer electrode 121 than by the outer guiding coils 141 of the second outer electrode 121 and the third outer electrode 121. Therefore, by adjusting the current of the inner guiding coil 130 and / or the outer guiding coil 141 on the first outer electrode 121, the magnetic field in the area of the first outer electrode 121 can be roughly adjusted. By adjusting the current of the outer guiding coil 141 of the second outer electrode 121 and / or the outer guiding coil 141 of the third outer electrode 121, the magnetic field in the area of the first outer electrode 121 can be finely adjusted. The adjustment principles of the magnetic fields in the areas of the second outer electrode 121 and the third outer electrode 121 are the same as that in the area of the first outer electrode 121, and will not be elaborated here. According to the above adjustment principle of the magnetic field, by comprehensively adjusting the current of the inner guiding coil 130, the current of the outer guiding coil 141 on the first outer electrode 121, the current of the outer guiding coil 141 of the second outer electrode 121, and the current of the outer guiding coil 141 of the third outer electrode 121, the magnetic fields of the first outer electrode 121, the second outer electrode 121, and the third outer electrode 121 can be accurately adjusted to the required magnetic field distribution.

[0052] During the process, by adjusting the current magnitudes of the inner guiding coil 130 and the first to third outer guiding coils 141, the magnetic field intensities of the first outer electrode 121, the second outer electrode 121, and the third outer electrode 121 are adjusted to be equal to or approximately equal to the magnetic field intensity in the area of the inner electrode 110, so that the distribution density of the plasma in the areas of the inner electrode 110, the first outer electrode 121, the second outer electrode 121, and the third outer electrode 121 is more uniform, to ensure the uniformity of the film thickness.

[0053] After the process is completed, by adjusting the magnitudes and directions of the currents of the inner guiding coil 130 and each outer guiding coil 141, the magnetic fields generated by the inner guiding coil 130 and the outer guiding coil assembly 140 in the area of the inner electrode 110 are made equal in magnitude and opposite in direction, so as to cancel each other out, making the magnetic field intensity in the area of the inner electrode 110 zero. Under the action of the magnetic fields generated by each outer guiding coil 141 in the area of the outer electrode 121, only the area of the outer electrode assembly 120 is affected by the magnetic field, so that the plasma is adjusted to basically gather in the area of the outer guiding coil assembly 140, and then the particles gather at the edge sheath layer.

[0054] In a specific embodiment, refer to Figure 4 、 Figure 5 and Figure 7 When an outer guiding coil 141 is provided on the side of each outer electrode 121 away from the wafer 200, the outer guiding coil 141 is located at the edge of the corresponding outer electrode 121. In this embodiment, an outer guiding coil 141 is provided on each outer electrode 121. Since the outer guiding coil 141 is located at the edge of the corresponding outer electrode 121, this outer guiding coil 141 will not only have a greater impact on the magnetic field in the area of its corresponding outer electrode 121, but also have a greater impact on the magnetic field in the area of the outer electrode 121 close to it. That is, by adjusting the magnitude of the current of this outer guiding coil 141, the magnetic field intensity in the area of its corresponding outer electrode 121 and the area of the outer electrode 121 close to it can be roughly adjusted.

[0055] In a specific embodiment, refer to Figure 1 and Figure 5 The inner guiding coil 130 is located at the edge of the inner electrode 110. In this embodiment, the inner guiding coil 130 is close to the outermost inner outer electrode 121, and the inner guiding coil 130 will have a greater impact on the magnetic field in the area of the outermost inner outer electrode 121. That is, by adjusting the magnitude of the current of this inner guiding coil 130, the magnetic field intensity in the area of the outermost inner outer electrode 121 can be roughly adjusted.

[0056] In some embodiments, the widths of the outer electrodes 121 are the same or different. In this embodiment, different process requirements may require different magnetic field intensity distributions. By adjusting the widths of the outer electrodes 121 and the coil currents, different process requirements can be flexibly met. By reasonably setting the widths of the outer electrodes 121, the magnetic fields in different areas can be more precisely controlled to optimize the distribution of the magnetic field and impedance, and then optimize the distribution of the plasma to achieve better process effects.

[0057] In a specific embodiment, refer to Figure 4 and Figure 5, when the widths of the outer electrodes 121 are different, the widths of the outer electrodes 121 gradually decrease from the inside to the outside. At high frequencies, the plasma distribution in the existing process chamber gradually decreases from the center to the edge. In this embodiment, by gradually decreasing the widths of the outer electrodes 121 from the inside to the outside, the magnetic field intensity in the more peripheral regions can be adjusted more precisely. Outer guide coils 141 are provided on each of the outer electrodes 121. By separately adjusting the current magnitudes of the outer guide coils 141, the magnetic field intensity in the corresponding outer electrode 121 region can be changed, and the radial distribution uniformity of the plasma density is improved through more precise and accurate regional adjustment.

[0058] In some specific embodiments, the magnetic resistance materials selected for the outer electrodes 121 are the same or different, and the magnetic resistance materials are nickel-iron alloys or graphite, etc. In this embodiment, since the resistivity changes of different magnetic resistance materials under the same magnetic field intensity are also different, according to the actual process requirements, the specific materials of the outer electrodes 121 are reasonably set to better adjust the magnetic field intensity in the outer electrode 121 regions and optimize the impedance distribution in the outer electrode 121 regions.

[0059] In a specific embodiment, the outer electrode 121 is annular and the outer diameter ranges from 30 mm to 70 mm.

[0060] In a specific embodiment, the diameter of the conductive electrode structure should be greater than or equal to 350 mm.

[0061] In some embodiments, the number of turns of the outer guide coils 141 is the same or different. In this embodiment, the number of turns of the outer guide coils 141 directly affects the magnetic field intensity. According to Faraday's law of electromagnetic induction, the more turns the coil has, the greater the magnetic field intensity generated. By reasonably setting the number of turns of the outer guide coils 141, the magnetic field intensity in the outer guide coil 141 regions can be controlled more precisely.

[0062] In a specific embodiment, the ratio range of the number of turns of the inner layer guide coil 130 to the number of turns of the outer guide coil 141 is 0.2 - 5. In this embodiment, by reasonably setting the ratio of the number of turns of the inner layer guide coil 130 to the number of turns of the outer guide coil 141, on the one hand, it is avoided that the ratio of the number of turns of the inner layer guide coil 130 to the number of turns of the outer guide coil 141 is too small, resulting in an insignificant adjustment of the magnetic field intensity in the outer electrode 121 regions and an inability to effectively adjust the plasma distribution; on the other hand, it is avoided that the ratio of the number of turns of the inner layer guide coil 130 to the number of turns of the outer guide coil 141 is too large, which will cause a large change in the magnetic field intensity even with a small change in current, making it difficult to finely adjust the magnetic field intensity in the outer electrode 121 regions.

[0063] In a specific embodiment, the number of turns of the inner layer guide coil 130 and the number of turns of the outer guide coil 141 are both greater than or equal to 3.

[0064] In a specific embodiment, the shape of the inner conductive coil 130 and the shape of the outer conductive coil 141 can be circular, oval, or the like.

[0065] In one embodiment, referring to Figure 7 , the spraying device 100 further includes a first insulating member (not shown in the figure) disposed on the side of the inner electrode 110 away from the wafer 200 and used to cover the inner conductive coil 130. The first insulating member is arranged along the extending direction of the inner conductive coil 130. The first insulating member has insulating properties and is made of an insulating material such as ceramic.

[0066] In one embodiment, referring to Figure 7 , the spraying device 100 further includes a second insulating member (not shown in the figure) disposed on the side of the outer electrode assembly 120 away from the wafer 200 and used to cover the outer conductive coil assembly 140. The second insulating member has insulating properties and is made of an insulating material such as ceramic. The second insulating members are several and are arranged in one-to-one correspondence with the outer conductive coils 141. Each second insulating member covers the corresponding outer conductive coil 141 and is arranged along the extending direction of the corresponding outer conductive coil 141.

[0067] In a specific embodiment, an inlet and an outlet are provided at the top of the spraying device 100. The wires of the inner conductive coil 130 and the wires of the outer conductive coil assembly 140 pass through the inlet and the outlet and are connected to a power source.

[0068] For the case where the conductive electrode structure is applied to the spraying device 100, a ventilation pipeline is connected to the spraying device 100 to transport process gas into the spraying device 100. When current passes through the inner conductive coil 130 and the outer conductive coil 141, according to Ampere's circuital law, a magnetic field will be generated around the inner conductive coil 130 and the outer conductive coil 141. At high frequencies, the rate of change of the current is relatively large, resulting in a relatively large rate of change of the magnetic field. According to Faraday's law of electromagnetic induction, a changing magnetic field will generate an induced electric field in the surrounding space. In this solution, the inner conductive coil 130 is covered by the first insulating member and the outer conductive coil 141 is covered by the second insulating member. By using the insulating properties of the first insulating member and the second insulating member, the generated magnetic field and electric field screen are partially shielded to weaken the electric field effect. Since the inner conductive coil 130 and the outer conductive coil 141 are located on the side of the corresponding electrode away from the wafer 200, under the shielding effect of the first insulating member and the second insulating member, the influence of the electric field and the magnetic field is mainly controlled near the sheath layer, avoiding the problem that the process gas in the ventilation pipeline is affected by the electric field and dissociates, thereby causing blockage of the pipeline.

[0069] The following takes the application of the conductive electrode structure to the spraying device as an example to explain the technical effects of the spraying device of the present invention in combination with the prior art.

[0070] During the process, referring to Figure 6, in the prior art, when generating plasma, the plasma concentration near the electrode edge is lower than that in the central region. Due to the lower plasma concentration in the electrode edge region, the reaction rate in the electrode edge region is slower, and the thickness of the deposited thin film is thinner; while the plasma concentration in the electrode central region is higher, the reaction rate in the electrode central region is faster, and the thickness of the deposited thin film is thicker, resulting in the problem that the deposited thin film is thick in the middle and thin at the edges, and the thickness uniformity of the thin film is poor. See Figure 7 , by adjusting the magnitude of the current flowing into the inner coil 130 and / or the outer coil assembly 140, the change in the magnetic field intensity can be adjusted, the impedance distribution of the conductive electrode structure can be changed, so that the magnetic field intensity in the region of the outer electrode assembly 120 is equal to or approximately equal to the magnetic field intensity in the region of the inner electrode 110, enabling the plasma to be evenly distributed in density in the region of the inner electrode 110 and the region of the outer electrode assembly 120, and further enabling the reaction rate in the region of the inner electrode 110 to be approximately equal to the reaction rate in the region of the outer electrode assembly 120, ensuring the thickness uniformity of the thin film.

[0071] After the process is completed, see Figure 8 , in the prior art, due to the lower plasma concentration in the electrode edge region, the particles are not completely distributed in the edge sheath layer, but are distributed throughout the entire sheath layer region, resulting in the air flow being unable to effectively carry away all the particles. See Figure 9 , by adjusting the magnitude and direction of the current flowing into the inner coil 130 and / or the outer coil assembly 140, the magnetic field intensity and magnetic field direction in the region of the inner electrode 110 and the region of the outer electrode assembly 120 can be adjusted, the impedance distribution of the conductive electrode structure can be changed, so that the region of the inner electrode 110 is not affected by the magnetic field, only the region of the outer electrode assembly 120 is affected by the magnetic field, and further the distribution region of the plasma is changed, enabling the plasma to be adjusted to be basically concentrated in the region of the outer coil assembly 140, and further enabling the particles to be concentrated at the edge sheath layer. When the plasma is disconnected, the introduced air flow can better carry away all the particles, avoiding particle residue and greatly improving the particle performance.

[0072] In addition, the present invention also provides a heater for a plasma processing device. See Figures 6 to 8 , the heater 300 includes: An inner electrode, as the inner main body of the heater 300, is made of a non-magnetic resistance metal material; An outer electrode assembly, as the outer main body of the heater 300, is made of a magnetic resistance material and is fixedly sleeved outside the inner electrode; An inner coil, arranged on the side of the inner electrode away from the wafer along the circumferential direction of the inner electrode, and the current of the inner coil can be adjusted independently; The outer conductive coil assembly is arranged on the side of the outer electrode assembly away from the wafer in the circumferential direction of the outer electrode assembly, and the current of the outer conductive coil assembly can be adjusted independently.

[0073] In the present invention, the heater 300 and the spraying device 100 belong to a general inventive concept, that is, the conductive electrode structure. The limitations on the technical features of each component of the conductive electrode structure in the embodiment of the spraying device 100 can also be applied to the corresponding components of the heater, which will not be elaborated here.

[0074] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0075] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0076] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.

[0077] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes fall within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical terms or scientific terms used herein should have the ordinary meaning understood by those of ordinary skill in the art to which the present invention pertains.

Claims

1. A conductive electrode structure, characterized in that: include: The inner electrode is made of non-magnetic resistance metal material; An outer electrode assembly, made of a magnetic resistance material and fixedly sleeved outside the inner electrode; An inner conductor coil is arranged on the side of the inner electrode away from the wafer along the circumferential direction of the inner electrode, and the current of the inner conductor coil can be adjusted separately; The outer conductive coil assembly is arranged on the side of the outer conductive coil assembly away from the wafer along the circumferential direction of the outer conductive coil assembly, and the current of the outer conductive coil assembly can be adjusted separately.

2. A spray device for plasma processing equipment, characterized in that: include: The conductive electrode structure as claimed in claim 1; The inner electrode serves as the inner body of the spray device; The outer electrode assembly serves as the outer body of the spray device.

3. The spray device of the plasma processing equipment according to claim 2, characterized in that: The outer conductive coil assembly includes at least two outer conductive coils which are arranged on the side of the outer conductive coil away from the wafer and are spaced apart along the circumferential direction of the outer conductive coil assembly. The current of each outer conductive coil can be adjusted independently to separately adjust the magnetic field strength of different areas on the outer conductive coil assembly.

4. The spray device of the plasma processing equipment according to claim 3, characterized in that: The outer electrode assembly comprises at least two outer electrodes made of magnetic resistance material and fixedly sleeved in layers, and at least one outer conductive coil is arranged on the side of each outer electrode away from the wafer.

5. The spray device of the plasma processing equipment according to claim 4, characterized in that: The widths of the external electrodes are the same or different.

6. The spray device of the plasma processing equipment according to claim 5, characterized in that: When the widths of the external electrodes are different, the widths of the external electrodes gradually decrease from the inside to the outside.

7. The spray device of the plasma processing equipment according to claim 4, characterized in that: The magnetoresistance materials of the external electrodes are the same or different.

8. The spray device of the plasma processing equipment according to claim 3, characterized in that: The number of turns of each of the outer conductive coils is the same or different; and / or, The ratio of the number of turns of the inner conductive coil to the number of turns of the outer conductive coil is in the range of 0.2-5.

9. The spray device of the plasma processing equipment according to any one of claims 2 to 8, characterized in that: It also includes a first insulating member disposed on the side of the inner electrode away from the wafer and used to cover the inner conductive wire coil; and / or, It also includes a second insulating member which is arranged on the side of the outer electrode assembly away from the wafer and is used to cover the outer conductive coil assembly.

10. A heater for a plasma processing device, characterized in that: include: The inner electrode, as the inner body of the heater, is made of non-magnetic resistance metal material; The outer electrode assembly, serving as the outer body of the heater, is made of magnetic resistance material and is fixedly sleeved outside the inner electrode; An inner conductor coil is arranged on the side of the inner electrode away from the wafer along the circumferential direction of the inner electrode, and the current of the inner conductor coil can be adjusted separately; The outer conductive coil assembly is arranged on the side of the outer conductive coil assembly away from the wafer along the circumferential direction of the outer conductive coil assembly, and the current of the outer conductive coil assembly can be adjusted separately.

Images