Substrate, integrated device packaging structure, acoustic device and related equipment

Abstract

The invention relates to the technical field of device packaging, and discloses a substrate, an integrated device packaging structure, an acoustic device and related equipment.The substrate is applied to device packaging and comprises a base body and a connecting structure integrally formed with the base body; the connecting structure comprises a metal ring located on the surface of the base body and a bonding pad located in the metal ring, and the metal ring and the bonding pad are in conductive connection in the base body. In the invention, the substrate and the connecting structure are integrally formed, and the connecting structure comprises the metal ring and the bonding pad, so that the step of independently processing the metal ring in the packaging process can be reduced, the production process is simplified, the production efficiency is improved, the production period of device packaging is shortened, the production cost is reduced, and the integrity and the reliability of the packaging structure are improved.

Description

Technical Field

[0001] This application relates to the technical field of device packaging, for example, to a substrate, an integrated device packaging structure, an acoustic device, and related equipment. Background Art

[0002] With the rapid development of fields such as radio frequency communication and vehicle-mounted electronics, the reliability requirements for acoustic devices in devices such as radio frequency devices and vehicle-mounted devices are getting higher and higher. Especially in harsh environments such as high humidity and high temperature, the airtightness of acoustic devices has become a key performance indicator. Airtight packaging of acoustic devices can effectively prevent water vapor from invading, improve the durability and stability of acoustic devices, and extend the life of acoustic devices.

[0003] In related technologies, a metal ring is formed by reprocessing and electroplating on a substrate, and then an epoxy film and a metal film are used to achieve airtight packaging of the acoustic device.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in related technologies: The substrate requires additional processing steps to form a metal ring, resulting in a relatively long overall production cycle for device packaging.

[0005] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of this application, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0006] To provide a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a comprehensive review, nor is it intended to identify key / important elements or delineate the scope of protection of these embodiments. Instead, it serves as a preface to the following detailed description.

[0007] Embodiments of the present disclosure provide a substrate, an integrated device packaging structure, an acoustic device, and related equipment to shorten the production cycle of device packaging.

[0008] In some embodiments, the substrate is applied to device packaging, and the substrate includes: a substrate body and a connection structure integrally formed with the substrate body; wherein, the connection structure includes a metal ring located on the surface of the substrate body and a pad located within the metal ring, and the metal ring and the pad are electrically connected inside the substrate body.

[0009] Optionally, the material of the substrate body includes a polymer material, a fiber-reinforced resin composite material, or a silicon-based material; and / or, the material of the connection structure includes a metal.

[0010] Optionally, relative to the surface of the substrate body, the height of the metal ring is greater than or equal to the height of the pad.

[0011] In some embodiments, the integrated device packaging structure includes: a substrate as described above; a chip connected to the pads and disposed on the surface of the substrate; a plastic encapsulation film that at least wraps and covers the outer surface of the chip and exposes at least a part of the surface of the metal ring; and a metal film that covers the plastic encapsulation film and extends to cover the edge of the substrate to cover the surface of the metal ring.

[0012] Optionally, there is a preset distance between the outer side of the chip and the inner side of the metal ring.

[0013] Optionally, the chip is connected to the pads through solder balls.

[0014] Optionally, the plastic encapsulation film extends to cover at least a part of the inner surface of the metal ring.

[0015] Optionally, the plastic encapsulation film also covers the surface of the substrate outside the metal ring; or, the plastic encapsulation film also covers the surface of the substrate outside the metal ring and at least a part of the outer surface of the metal ring, and ensures that there is an exposed surface of the metal ring that is not covered by the plastic encapsulation film.

[0016] Optionally, the thickness range of the plastic encapsulation film is [20 μm, 80 μm]; and / or, the thickness range of the metal film is [20 μm, 80 μm].

[0017] Optionally, the device packaging structure further includes: a protective layer that covers the surface of the metal film.

[0018] In some embodiments, the acoustic device includes the integrated device packaging structure as described above.

[0019] In some embodiments, the radio frequency device includes the acoustic device as described above.

[0020] In some embodiments, the vehicle-mounted device includes the acoustic device as described above, or the radio frequency device as described above.

[0021] The substrate, the integrated device packaging structure, the acoustic device, and the related devices provided by the embodiments of the present disclosure can achieve the following technical effects: In the embodiments of the present disclosure, the base body and the connection structure are integrally formed. The connection structure includes a metal ring and pads, which can reduce the steps of separately processing the metal ring during the packaging process, simplify the production process, improve the production efficiency, thereby shortening the production cycle of device packaging, reducing the production cost at the same time, and improving the integrity and reliability of the packaging structure. In addition, the integrally formed design improves the mechanical strength of the packaging structure, can better withstand external mechanical stress, and can also reduce material waste, further reducing the production cost.

[0022] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. Description of the Drawings

[0023] One or more embodiments are illustrated by way of example in the corresponding drawings, which do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and wherein: Figure 1 is a side view of a substrate for device packaging provided by an embodiment of the present disclosure; Figure 2 is a top view of a substrate for device packaging provided by an embodiment of the present disclosure; Figure 3 is a side view of an integrated device packaging structure provided by an embodiment of the present disclosure; Figure 4 is a side view of another integrated device packaging structure provided by an embodiment of the present disclosure; Figure 5 is provided by an embodiment of the present disclosure in Figure 1 is a side view of flip-chip bonding of a chip and a substrate based on; Figure 6 is provided by an embodiment of the present disclosure in Figure 5 is a side view after flip-chip bonding of a chip and a substrate is completed based on; Figure 7 is provided by an embodiment of the present disclosure in Figure 6 is a side view after a molding layer is provided based on; Figure 8 is provided by an embodiment of the present disclosure in Figure 7 is a side view after at least part of the molding layer on the surface of the metal ring is removed based on; Figure 9 is provided by an embodiment of the present disclosure in Figure 8 is a side view after a metal layer is provided based on; Figure 10 is provided by an embodiment of the present disclosure in Figure 9 is a side view after final cutting based on.

[0024] Reference numerals: 10, substrate; 11, matrix; 12, connection structure; 121, metal ring; 122, pad; 123, conductive connection part; 124, electrical connection point; 15, solder ball; 20, chip; 30, molding film; 40, metal film; 31, molding layer. Detailed implementation manners

[0025] In order to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The attached drawings are only for reference and explanation, and are not used to limit the embodiments of the present disclosure. In the following technical descriptions, for the sake of explanation, numerous details are provided to give a full understanding of the disclosed embodiments. However, one or more embodiments can still be implemented without these details. In other cases, well-known structures and devices may be shown in a simplified manner to simplify the drawings.

[0026] In the technical solutions described in this application, terms such as "first" and "second" are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so as to implement the embodiments of the present disclosure described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0027] Unless otherwise specified, the term "plurality" means two or more.

[0028] In the embodiments of the present disclosure, the character " / " indicates that the front and rear objects are in an "or" relationship. For example, A / B means: A or B.

[0029] The term "and / or" is an associative relationship describing an object, indicating that three relationships can exist. For example, A and / or B means: A or B, or, A and B these three relationships.

[0030] The term "corresponding" can refer to an associative relationship or a binding relationship. A corresponding to B means that there is an associative relationship or a binding relationship between A and B.

[0031] Combined Figure 1 and Figure 2 As shown, the embodiments of the present disclosure provide a substrate 10 for device packaging, including: a substrate body 11 and a connection structure 12 integrally formed with the substrate body 11.

[0032] Wherein, the connection structure 12 includes a metal ring 121 on the surface of the substrate body 11 and a solder pad 122 inside the metal ring 121, and the metal ring 121 and the solder pad 122 are conductively connected inside the substrate body 11.

[0033] In the embodiments of the present disclosure, the substrate 11 and the connection structure 12 are integrally formed. The connection structure 12 includes a metal ring 121 and a pad 122, which can reduce the steps of separately processing the metal ring 121 during the packaging process, simplify the production process, improve production efficiency, thereby shortening the production cycle of device packaging, while reducing production costs and improving the integrity and reliability of the packaging structure. In addition, the integrally formed design improves the mechanical strength of the packaging structure, can better withstand external mechanical stress, and can also reduce material waste, further reducing production costs. Moreover, in the substrate 10 provided by the embodiments of the present disclosure, the metal ring 121 surrounds the pad 122, and a sealed structure can be formed during device packaging, effectively preventing external environmental factors such as water vapor and dust from invading the interior of the package. The pad 122 is located inside the metal ring 121, providing a stable electrical connection point to ensure the reliability of electrical connection. The pad 122 and the metal ring 121 are integrally formed and conductively connected inside the substrate 11, realizing the electrical connection between the metal ring 121 and the pad 122, and can also reduce the connection problems between the pad 122 and the metal ring 121 in the package, improving the stability of electrical connection.

[0034] In the substrate 10 of the embodiments of the present disclosure, as Figure 1 shown, the connection structure 12 includes a metal ring 121 and a pad 122 located on the first surface of the substrate 11, and a conductive connection portion 123 located inside the substrate 11; wherein, the pad 122 is located inside the metal ring 121, and the metal ring 121 and the pad 122 are respectively conductively connected to the conductive connection portion 123. It can realize the electrical connection between the metal ring 121 and the pad 122 inside the substrate 11, as well as the pre-designed circuit function.

[0035] Optionally, on the second surface of the substrate 11, the connection structure 12 further forms another electrical connection point 124, and the electrical connection point 124 is conductively connected to the conductive connection portion 123, forming an electrical connection with the metal ring 121 and the pad 122 inside the substrate 11.

[0036] Optionally, the substrate 10 includes a plurality of connection structures 12 connected in sequence. Adjacent connection structures 12 are connected by a conductive connection portion 123. In each connection structure 12, it includes a metal ring 121 and a pad 122 as Figure 1 shown. In this way, synchronous production of multiple device packaging structures can be realized, improving production efficiency.

[0037] In the substrate 10 of the embodiments of the present disclosure, the material of the substrate 11 is not limited and can be determined according to actual needs. For example, polymer materials, fiber-reinforced resin composite materials, or silicon-based materials, etc.

[0038] Optionally, the material of the substrate 11 includes the material for PCB boards. In this embodiment, the substrate 10 includes a PCB substrate.

[0039] Optionally, the material of the substrate 11 includes a polymer material. In this embodiment, using a polymer material as the substrate 11 can make the substrate 10 lighter and further reduce the packaging cost. The good insulation performance of the polymer material can effectively isolate electrical signals, reduce signal interference, improve the electrical performance of the device, and also prevent electrical faults such as short circuits, improving the reliability of the device.

[0040] Optionally, the polymer material includes: Core Material (core board material) or PP Material (polypropylene material). Among them, Core Material can be composed of copper foil, an insulating layer, and another layer of copper foil, and the middle insulating layer can be a cured resin and fiberglass cloth. PP Material is a thermoplastic plastic prepared by the addition polymerization reaction of propylene.

[0041] Optionally, the material of the substrate 11 includes a fiber-reinforced resin composite material. For example, composite materials such as glass fiber-reinforced resin and carbon fiber-reinforced resin composite materials, among which the resin includes epoxy resin, phenolic resin, polyurethane resin, etc.

[0042] Optionally, the material of the substrate 11 includes a silicon-based material. For example, lithium tantalate silicate, 4H-silicon carbide, etc.

[0043] In the embodiments of the present disclosure, the material of the connection structure 12 is not limited, as long as it is a conductive metal that realizes electrical connection. For example, metal materials such as copper, aluminum, tin, or tin-silver-copper alloy, etc.

[0044] Optionally, the material of the connection structure 12 includes copper. In this embodiment, according to the pre-designed structure, the connection structure 12 uses copper, and by laminating the material of the substrate 11 (for example, a polymer material) with copper, a PCB substrate 10 for device packaging can be obtained. The PCB substrate 10 can provide functions such as mechanical support, electrical interconnection, and hermetic connection. Among them, the metal ring 121 surrounds the pad 122, and a sealed structure can be formed during device packaging, effectively preventing external environmental factors such as water vapor and dust from invading the inside of the package. The pad 122 is located inside the metal ring 121, providing a stable electrical connection point to ensure the reliability of the electrical connection. The pad 122 and the metal ring 121 are integrally formed, which can also reduce the connection problems between the pad 122 and the metal ring 121 in the package and improve the stability of the electrical connection.

[0045] Optionally, relative to the surface of the substrate 11, the height of the metal ring 121 is greater than or equal to the height of the pad 122.

[0046] In this embodiment, the height of the metal ring 121 is greater than or equal to the height of the pad 122, which can better surround the pad 122 to form a more effective sealing structure, preventing external environmental factors such as moisture and dust from invading the interior of the package. The higher metal ring 121 can provide better mechanical protection for the pad 122, reducing the impact of external mechanical stresses (such as vibration and shock) on the pad 122. The higher metal ring 121 can also increase the heat dissipation area, helping with heat dissipation and improving the thermal management performance of the device.

[0047] Combined with Figure 3 and Figure 4 As shown, based on the substrate 10 for device packaging described above, an integrated device packaging structure is provided in an embodiment of the present disclosure, including: the substrate 10 for device packaging according to any of the foregoing embodiments, a chip 20, a plastic encapsulation film 30, and a metal film 40.

[0048] The chip 20 is connected to the pad 122 and disposed on the surface of the substrate 10. The plastic encapsulation film 30 at least wraps and covers the outer surface of the chip 20 and exposes at least a part of the surface of the metal ring 121. The metal film 40 covers the plastic encapsulation film 30 and extends to cover the edge of the substrate 10 to cover the surface of the metal ring 121.

[0049] In the embodiment of the present disclosure, through the multi-layer sealing design of the metal ring 121, the plastic encapsulation film 30, and the metal film 40, excellent airtightness is provided, which can effectively prevent external environmental factors such as moisture and dust from invading the interior of the package. The plastic encapsulation film 30 and the metal film 40 can provide good mechanical protection for the chip 20, reducing the impact of external mechanical stresses. The metal film 40 also has a good electromagnetic shielding effect, which can reduce external electromagnetic interference and improve the electrical performance of the device. The metal film 40 is connected to the metal ring 121, which helps with heat dissipation and can effectively reduce the operating temperature of the chip 20, improving the reliability and service life of the device. Through the integrated design of the substrate 10 and the metal ring 121, the packaging process is simplified, the production cycle of the device packaging structure is shortened, and the production cost is reduced.

[0050] It can be understood that in the Figure 3 and Figure 4 shown structure, the peripheral lines of the corners of the plastic encapsulation film 30 and the metal film 40 are not limited to rectangles, as long as the plastic encapsulation film 30 and the metal film 40 can cover the corresponding areas. The peripheral lines of the corners can also be arcs, straight lines, or irregular curves, etc.

[0051] In the device packaging structure of the embodiment of the present disclosure, the chip 20 is connected to the pad 122, the metal ring 121 is located outside the pad 122, and the relative positions of the chip 20 and the metal ring 121 are not limited and can be set according to actual situations.

[0052] Optionally, the outer side of the chip 20 can be in contact with the inner side of the metal ring 121; or, the outer edge of the chip 20 can be placed on a part of the upper surface of the metal ring 121.

[0053] Optionally, there is a preset distance L between the outer side of the chip 20 and the inner side of the metal ring 121. In this embodiment, the existence of the preset distance ensures that the metal ring 121 can effectively surround the chip 20 to form a tighter sealing structure, preventing external environmental factors such as water vapor and dust from invading the package interior. The preset distance can provide sufficient buffer space for the chip 20, which can reduce the impact of external mechanical stresses (such as vibration and shock) on the chip 20, better isolate the chip 20 and the metal ring 121, reduce electrical signal interference, and improve the electrical performance of the device. In addition, it can also avoid the situation of extrusion damage when the chip 20 contacts the metal ring 121.

[0054] Optionally, the range of the preset distance L is (0 μm, 100 μm]. While ensuring the formation of a tight sealing structure, the size of the device package structure is taken into account. For example, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or any value within the range of (0 μm, 100 μm].

[0055] Optionally, the range of the preset distance L is [10 μm, 100 μm]. Optionally, the range of the preset distance L is [30 μm, 100 μm]. Optionally, the range of the preset distance L is [50 μm, 100 μm].

[0056] Optionally, the chip 20 is connected to the pad 122 through solder balls 15. In this embodiment, the solder balls 15 can provide a stable electrical connection, ensure reliable signal transmission between the chip 20 and the substrate 10, and can also provide a certain mechanical connection strength to enhance the bonding force between the chip 20 and the substrate 10. The material of the solder balls 15 can be determined according to actual needs. For example, the solder balls 15 include gold balls, tin balls, and copper balls.

[0057] Optionally, the solder balls 15 include gold balls. In this embodiment, the gold balls are formed by thermocompression ultrasonic bonding of gold wires to provide an electrical connection between the chip 20 and the substrate 10. The gold balls have extremely high electrical conductivity, can provide a low-resistance electrical connection, reduce signal transmission loss, and improve the electrical performance of the device. The gold balls also have excellent oxidation resistance and corrosion resistance, can maintain stable performance in a harsh environment, and improve the reliability of the device. In addition, the gold ball connection technology is compatible with the traditional flip-chip 20 soldering process, has a high degree of process reuse, and is suitable for large-scale production.

[0058] Optionally, as Figure 3As shown, the encapsulation film 30 extends to cover the inner surface portion of the metal ring 121.

[0059] In this embodiment, the encapsulation film 30 extending to cover the inner surface portion of the metal ring 121 can form a tighter sealing structure, preventing external environmental factors such as water vapor and dust from invading the interior of the package. It can also provide better mechanical protection for the metal ring 121 and the chip 20, reducing the impact of external mechanical stresses (such as vibration and shock) on the package structure. This design can also simplify the packaging process, reduce production steps, shorten the production cycle of the device package structure, and improve production efficiency.

[0060] Optionally, the encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121.

[0061] Optionally, as Figure 4 shown, the encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121 and the outer surface portion of the metal ring 121, and ensures that there is an exposed surface on the metal ring 121 that is not covered by the encapsulation film 30.

[0062] In this embodiment, the encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121. Such a design allows for only removing a part of the encapsulation layer on the surface of the metal ring 121 during the packaging process of the device package structure, further simplifying the packaging process.

[0063] Optionally, the chip 20 is configured to implement electroacoustic - acoustic - electric signal conversion and filtering; the main materials are Al electrodes and LT / LN substrates.

[0064] Optionally, the encapsulation film 30 includes an epoxy thermosetting colloidal film. The epoxy thermosetting colloidal film is a film material with an epoxy resin as the matrix, which cross - links and cures by heating or adding a curing agent. In this embodiment, the application environment of the acoustic device varies from minus 40 degrees Celsius to 105 degrees Celsius. In a high - temperature environment, affected by temperature, the epoxy film will experience a certain degree of thermal expansion. Specifically, the thermal expansion in the thickness direction will push open the metal film 40. Therefore, considering the mechanical protection effect and the influence of thermal expansion, the thickness of the epoxy film has a suitable range. Preferably, the thickness h1 of the epoxy film ranges from [20 μm, 80μm]. For example, the thickness h1 of the epoxy film can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0065] In the device package structure of the present disclosure embodiment, the material of the metal film 40 is not limited as long as it can perform electromagnetic shielding.

[0066] Optionally, the metal film 40 includes a copper film.

[0067] Optionally, the thickness h2 of the metal film 40 ranges from [20 μm, 80 μm]. For example, the thickness h2 of the metal film 40 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0068] Optionally, the device packaging structure further includes: a protective layer covering the surface of the metal film 40. In this embodiment, the provision of the protective layer can protect the metal film 40 from oxidation or corrosion. At the same time, the protective layer can also reduce the electrical loss on the surface of the metal film 40 and improve the electrical performance of the device.

[0069] Optionally, the protective layer is an inert metal layer, and its material includes Ni or Ti materials.

[0070] An embodiment of the present disclosure provides an acoustic device, including the integrated device packaging structure of any of the foregoing embodiments.

[0071] The acoustic device of the embodiment of the present disclosure includes the device packaging structure of any of the foregoing embodiments. Therefore, the acoustic device has all the technical effects of the device packaging structure and will not be elaborated herein.

[0072] An embodiment of the present disclosure provides a radio frequency device, including the foregoing acoustic device.

[0073] The radio frequency device of the embodiment of the present disclosure includes the foregoing acoustic device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the radio frequency device has all the technical effects of the device packaging structure and will not be elaborated herein.

[0074] An embodiment of the present disclosure provides a vehicle-mounted device, including the foregoing acoustic device, or the foregoing radio frequency device.

[0075] The vehicle-mounted device of the embodiment of the present disclosure includes the foregoing acoustic device, or the foregoing radio frequency device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the vehicle-mounted device has all the technical effects of the device packaging structure and will not be elaborated herein.

[0076] Next, in conjunction with Figures 1 to 10 A device packaging method for implementing the integrated device packaging structure provided by the embodiment of the present disclosure will be described. The device packaging method specifically includes: S100, prepare a substrate 10 for device packaging.

[0077] In conjunction with Figure 1 As shown, the substrate 10 includes a substrate body 11 and a connection structure 12 integrally formed with the substrate body 11; the connection structure 12 includes a metal ring 121 on the first surface of the substrate body 11 and a pad 122 within the metal ring 121.

[0078] Optionally, the substrate 10 is prepared as follows: Obtain a substrate body 11 designed with vias and circuit diagrams; stack the substrate body 11 and the connection material in the designed order and then perform lamination to form the substrate 10; etch the connection material on the first surface of the substrate 10 to form a metal ring 121 and pads 122 located within the metal ring 121.

[0079] In this embodiment, by stacking the substrate body 11 and the connection material in the designed order and then performing lamination, an integrated substrate 10 structure is formed. The lamination process tightly combines the substrate body 11 and the connection material, avoiding problems such as delamination, peeling, or deformation that may occur in traditional bonding processes, ensuring the long-term reliability of the substrate 10, and significantly enhancing the mechanical strength and stability of the substrate 10. The integrated forming process simplifies the process of splicing the metal ring 121 on the substrate 10 through the stacking and lamination steps, reduces the process complexity, and improves the production efficiency. In addition, the integrated forming process tightly combines the substrate body 11 and the connection material, reduces the impedance and signal loss in electrical connections, ensures the electrical connection reliability of the metal ring 121 and the pads 122, optimizes the signal transmission efficiency, and improves the electrical performance of the substrate 10.

[0080] Optionally, the substrate 10 includes a plurality of connection structures 12 connected in sequence. In each connection structure 12, it includes a metal ring 121 and pads 122 as shown in Figure 1 This way, synchronous production of multiple device packaging structures can be achieved, improving the production efficiency.

[0081] S200, Connect the chip 20 to the pads 122 on the first surface of the substrate 10 to set the chip 20 on the first surface of the substrate 10, forming a to-be-packaged component.

[0082] Optionally, as shown in combination with Figure 5 and Figure 6 , connecting the chip 20 to the pads 122 on the first surface of the substrate 10 includes: fabricating solder ball 15 bumps on the surface to be connected of the chip 20 according to the positions of the pads 122 on the first surface of the substrate 10; flip-chip bonding the surface to be connected of the chip 20 onto the first surface of the substrate 10 so that the solder ball 15 bumps are connected to the pads 122.

[0083] Optionally, as shown in combination with Figure 6 , during the flip-chip bonding process of the chip 20, for the selected chip 20 and substrate 10, there is a preset distance L between the outside of the chip 20 and the inside of the metal ring 121. This way, the complexity of the flip-chip bonding process can be lower, avoiding the situation of extrusion damage caused by contact between the chip 20 and the metal ring 121, which is beneficial for large-scale production and yield improvement.

[0084] S300, Cover and set a molding compound layer 31 on the surface of the to-be-packaged component provided with the chip 20.

[0085] As shown in combination with Figure 7 After the flip-chip bonding process of the chip 20 is completed, the epoxy film is molded to form an inner laminate, that is, a plastic package layer 31, which can play a certain role in airtight sealing, buffering and mechanical protection.

[0086] S400, remove at least part of the plastic package layer 31 on the surface of the metal ring 121 to expose at least part of the surface of the metal ring 121, forming a plastic package film 30.

[0087] As shown in combination with Figure 8 After the plastic package layer 31 is formed, grooving is performed by laser to remove at least part of the plastic package layer 31 on the surface of the metal ring 121, forming a plastic package film 30.

[0088] Optionally, grooving by laser includes: using a focusing mirror to focus a high-power density laser beam on the plastic package layer 31 on the surface of the metal ring 121; after the irradiated material absorbs the laser energy, it rapidly heats up to reach melting, vaporization, ablation or ignition point.

[0089] Optionally, removing at least part of the plastic package layer 31 on the surface of the metal ring 121 includes: removing at least part of the plastic package layer 31 on the surface of the metal ring 121 along the circumferential surface of the metal ring 121 to expose the exposed surface of the annular metal ring 121.

[0090] Optionally, during the formation of the plastic package film 30, it is possible to choose to remove the plastic package layer 31 on the surface of the substrate 10 outside the metal ring 121 to form the plastic package film 30 in the chip package structure as shown in Figure 3 ; or, retain the plastic package layer 31 on the surface of the substrate 10 outside the metal ring 121 to form the plastic package film 30 in the chip package structure as shown in Figure 4 . According to different actual process conditions, a suitable process can be selected.

[0091] S500, cover and set a metal layer on the surface of the plastic package film 30 and the first surface of the exposed substrate 10 to form a metal film 40.

[0092] As shown in combination with Figure 9 The metal film 40 is formed by sputtering, evaporation or electroplating to construct a metal airtight sealing layer, realizing the metal airtight sealing of the acoustic device, and at the same time, the package has a good electromagnetic shielding effect.

[0093] Optionally, covering and setting a metal layer on the surface of the plastic package film 30 and the first surface of the exposed substrate 10 includes: depositing a first metal on the surface of the plastic package film 30 and the first surface of the exposed substrate 10 to form a seed layer; depositing a second metal on the surface of the seed layer to form a main body of the metal layer; depositing a first metal on the surface of the main body of the metal layer to form a protective layer.

[0094] Optionally, the first metal includes Ni or Ti.

[0095] Optionally, the second metal includes copper.

[0096] Specifically, first deposit Ni or Ti material by sputtering or evaporation to form a seed layer, then form a copper film as the main body of the metal layer by electroplating or sputtering, and finally electroplate Ni or Ti material to form a protective layer to prevent copper corrosion.

[0097] S600, perform finished product cutting to obtain a plurality of device package structures.

[0098] Combined Figure 10 As shown, after encapsulation is completed, through finished product cutting, an integrated device package structure with good airtight sealing and electromagnetic shielding effects is formed, and then a plurality of acoustic devices can be obtained. The acoustic devices can be applied to radio frequency devices or vehicle-mounted devices.

[0099] The above description and the accompanying drawings fully illustrate the embodiments of the present disclosure so that those skilled in the art can practice them. Other embodiments may include structural, logical, electrical, process, and other changes. Embodiments only represent possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations can vary. Parts and features of some embodiments can be included in or replace parts and features of other embodiments. Moreover, the terms used in this application are only used to describe the embodiments and do not limit the technical solutions described in this application. As used in the technical solutions described in this application, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to also include the plural forms. Similarly, as used in this application, the term "and / or" refers to any and all possible combinations including one or more of the associated listed items. Additionally, when used in this application, the term "comprise" and its variants "comprises" and / or "comprising" etc. mean the presence of the stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groupings of these. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the process, method, or device comprising the element. Herein, what each embodiment focuses on can be the differences from other embodiments, and the same or similar parts between various embodiments can be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, the relevant parts can refer to the description of the method part.

Claims

1. A substrate, characterized in that: The substrate is used for device packaging, and the substrate includes: a base body and a connection structure integrally formed with the base body; The connection structure includes a metal ring located on the surface of the substrate and a pad located inside the metal ring, and the metal ring and the pad are electrically connected inside the substrate.

2. The substrate according to claim 1, characterized in that The material of the matrix includes polymer material, fiber-reinforced resin composite material or silicon-based material; and / or, The material of the connecting structure includes metal.

3. The substrate according to claim 1 or 2, characterized in that: Relative to the substrate surface, the height of the metal ring is greater than or equal to the height of the pad.

4. An integrated device packaging structure, characterized in that: include: The substrate according to any one of claims 1 to 3; A chip is connected to the pad to be disposed on the surface of the substrate; A plastic film, at least covering the outer surface of the chip and exposing at least a portion of the surface of the metal ring; The metal film covers the plastic film and extends to cover the edge of the substrate to cover the surface of the metal ring.

5. The device packaging structure according to claim 4, characterized in that: There is a preset distance between the outer side of the chip and the inner side of the metal ring; and / or, The chip is connected to the pads via solder balls.

6. The device packaging structure according to claim 4, characterized in that: The plastic film extends to cover a portion of the inner surface of the metal ring.

7. The device packaging structure according to any one of claims 4 to 6, characterized in that: The plastic film also covers the surface of the substrate outside the metal ring; or, The plastic film also covers the substrate surface outside the metal ring and part of the outer surface of the metal ring, and ensures that the metal ring surface has an exposed surface not covered by the plastic film.

8. The device packaging structure according to any one of claims 4 to 6, characterized in that: The thickness of the plastic film is in the range of [20 μm, 80 μm]; and / or, The thickness of the metal films ranges from [20 μm, 80 μm].

9. The device packaging structure according to any one of claims 4 to 6, characterized in that: Also includes: A protective layer covers the surface of the metal film.

10. An acoustic device, characterized in that: Comprising the integrated device packaging structure as claimed in any one of claims 4 to 9.

11. A radio frequency device, characterized in that: Comprising the acoustic device as claimed in claim 10.

12. A vehicle-mounted device, characterized in that: Includes the acoustic device as claimed in claim 10, or the radio frequency device as claimed in claim 11.

Images