Wide-temperature-range intelligent thermal control device and preparation method thereof

Abstract

The invention discloses a wide-temperature-range intelligent thermal control device and a preparation method thereof, and belongs to the technical field of passive radiation thermal management. The invention aims to solve the problems that the wide temperature range applicability of the intelligent thermal control device is limited, the adaptation between film layers of the intelligent thermal control device is weakened and the service performance of the intelligent thermal control device is degraded under a specific working condition due to softening, shrinkage and expansion of a metal layer and the like. The wide-temperature-range intelligent thermal control device is composed of a substrate, an infrared reflector layer, a dielectric layer and a phase change layer. The infrared reflector layer, the dielectric layer and the phase change layer are sequentially arranged on the substrate to form a Fabry-Perot cavity structure; the infrared reflecting mirror layer is made of TiN; the dielectric layer is made of BaF2, CsI, HfO2, ZnO, ZnS or ZnSe; and the phase change layer is a W-doped VO2 thin film. The emissivity change value of the wide-temperature-range intelligent thermal control device is 0.52, and the performance is not attenuated after a high and low temperature stability test.

Description

Technical Field

[0001] The present invention belongs to the technical field of passive radiative thermal management, and particularly relates to a wide-temperature-range intelligent thermal control device and a preparation method thereof. Background Art

[0002] With the development of technologies such as aerospace, aviation, and electronic information, intelligent thermal control plays an increasingly important role in these fields. Especially in space devices, high-speed aircraft, and high-power electronic equipment, the thermal management problem has become an important factor restricting their performance and reliability. Traditional thermal control methods usually rely on fixed thermal management power and cannot adapt to the dynamic heat dissipation requirements under wide-temperature-range conditions. An intelligent thermal control device refers to a device that can adaptively adjust its thermal radiation performance according to environmental changes in different working states to achieve efficient heat dissipation and temperature control. In recent years, intelligent thermal control devices mainly based on variable emissivity coating materials have made certain progress in the field of thermal control.

[0003] Tang et al. developed a mechanically flexible coating based on an Ag / BaF 2 / VO 2 structure, enabling its thermal emission to adapt to different environmental temperatures and thus realizing all-season thermal management. This temperature-adaptive radiation coating can optimally absorb solar energy and automatically switch the emissivity, which is 0.20 when the environmental temperature is below 15 °C and 0.90 when the temperature is above 30 °C. (K. Tang, K. Dong, J. Li, M. P. Gordon, F. G. Reichertz, H. Kim, Y. Rho, Q. Wang, C. Lin, C. P. Grigoropoulos, A. Javey, J. J. Urban, J. Yao, R. Levinson, J. Wu, SCIENCE 2021, 374, 1504–1509.) Sun et al. demonstrated a novel intelligent optical solar reflector for spacecraft thermal control based on Al / SiO 2 / VO 2 / Al 2 O 3 using a patterned thermochromic VO 2 plasmonic metasurface design. The emissivity tunability of the reflector is 0.48, which is 30% higher than that of an unstructured thin film. (K. Sun, C. A. Riedel, A. Urbani, M. Simeoni, S. Mengali, M. Zalkovskij, B. Bilenberg, C. H. de Groot, O. L. Muskens, ACS PHOTONICS 2018, 5, 2280-2286.).

[0004] Advanced intelligent thermal control methods face the application requirements under extreme temperature difference conditions. For example, spacecraft in space face extreme temperature differences (-150°C - 500°C). The local temperature of high-temperature electronic devices and power semiconductors can reach above 500°C during operation. Developing intelligent thermal control devices applicable to a wide temperature range is crucial for achieving effective thermal management, protecting precision equipment, and improving energy utilization efficiency.

[0005] Most existing intelligent thermal control technologies exhibit good performance within a conventional temperature range. However, in a wide temperature range (such as -150°C to +500°C) or an even broader temperature range, there are still significant challenges in thermal control effect and stability. When the temperature change amplitude is large, the response ability of thermal control devices is often limited by the characteristics of their own materials, resulting in a decline or even failure of the thermal control effect.

[0006] For example, existing intelligent thermal control devices often rely on metal mirrors to achieve their low-temperature and low-emission effects. However, the degradation of metal films under high-temperature conditions, such as softening, melting, strength reduction, or thermal expansion mismatch, will cause the devices to fail. There is a lack of efficient solutions in the existing technology that can adaptively adjust the heat dissipation performance in extreme temperature environments. How to ensure the dynamic heat dissipation efficiency and long-term stability at different temperatures is a major problem in current intelligent thermal control technologies. Summary of the Invention

[0007] The object of the present invention is to solve the problems of limited wide-temperature-range applicability of intelligent thermal control devices caused by softening and shrinkage of metal layers, weakened film layer adaptation, and degraded service performance of intelligent thermal control devices under specific working conditions, and to provide a wide-temperature-range intelligent thermal control device and its preparation method.

[0008] A wide-temperature-range intelligent thermal control device is composed of a substrate, an infrared mirror layer, a dielectric layer, and a phase change layer; the infrared mirror layer, the dielectric layer, and the phase change layer are sequentially arranged on the substrate to form a Fabry-Pérot cavity structure;

[0009] The infrared mirror layer is TiN;

[0010] The dielectric layer is BaF 2 、CsI、HfO 2 、ZnO、ZnS or ZnSe;

[0011] The phase change layer is a W-doped VO 2 thin film.

[0012] A preparation method of a wide-temperature-range intelligent thermal control device is specifically completed according to the following steps:

[0013] I. Cleaning the substrate:

[0014] The substrate is successively placed in deionized water, ethanol, and acetone and ultrasonically cleaned for a period of time respectively, and then blown dry with nitrogen to obtain a substrate with a clean surface;

[0015] II. Preparation of the infrared mirror layer:

[0016] Under the conditions of a background vacuum of 10 -3 Pa to 10 -5 Pa, a temperature of 200°C to 300°C, an argon gas flow rate of 70 sccm to 100 sccm, a nitrogen gas flow rate of 7 sccm to 10 sccm, a gas pressure of 0.4 Pa to 0.9 Pa, and a sputtering power of 150 W to 180 W, using Ti as the target, a TiN thin film is deposited on the substrate by DC sputtering technology; then annealing treatment is carried out for a period of time under the conditions of a nitrogen atmosphere and a temperature of 400°C to 500°C to obtain a substrate with an infrared mirror layer;

[0017] III. Preparation of the dielectric layer:

[0018] Under the conditions of a background vacuum of 10 -6 Pa to 10 -8 Pa, a substrate temperature of room temperature to 100°C, a target power of 2 kW to 5 kW, and a deposition rate of Using BaF 2 , CsI, HfO 2 , ZnO, ZnS or ZnSe powder as the evaporation material, a BaF 2 , CsI, HfO 2 , ZnO, ZnS or ZnSe thin film is deposited on the substrate with an infrared mirror layer by electron beam evaporation technology to obtain a substrate with a dielectric layer;

[0019] IV. Under the conditions of a frequency of 400 Hz to 450 Hz, a pulse width of 50 μs to 100 μs, a power of 180 W to 200 W, a background vacuum of 5×10 -4 Pa to 1×10 -5 Pa, a deposition pressure of 0.4 Pa to 0.9 Pa, an argon gas flow rate of 80 sccm - 100 sccm, an oxygen gas flow rate of 1.0 sccm to 1.5 sccm, and a substrate temperature of 200°C to 400°C, using a tungsten - vanadium alloy as the target, a W - doped VO 2 thin film is deposited on the substrate with a dielectric layer by high - energy pulsed magnetron sputtering technology; then annealing treatment is carried out for a period of time under the conditions of an argon atmosphere and a temperature of 480°C to 580°C to obtain a wide - temperature - range intelligent thermal control device.

[0020] The principle and advantages of the present invention:

[0021] I. Aiming at the limitations of existing devices in terms of wide-temperature applicability, the present invention prepares a potential non-metallic material to replace the traditional metal reflective layer, selects specific dielectric layer materials, and proposes a new film system design scheme and its preparation process. By controlling the magnetron sputtering and electron beam deposition process parameters throughout the process to adjust the deposition quality and thickness of each layer, and through high and low temperature stability tests (heating at 500 °C for 1 hour and soaking in liquid nitrogen for 1 hour in a tube furnace under an argon atmosphere) and variable temperature (0 °C, 60 °C) infrared reflection spectroscopy tests, the applicable range is wide.

[0022] II. As a metal nitride with extremely high hardness, good chemical stability and high temperature resistance, TiN has a relatively high reflectivity and can be used as an infrared reflector to replace the metal film in traditional intelligent thermal control devices. The far-infrared reflectivity of TiN is close to that of aluminum (Al), and it has high temperature stability, and its thermal expansion coefficient matches that of other metal oxides. After using TiN to replace the metal reflective layer, the wide-temperature applicability and thermal cycling stability of intelligent thermal control devices have been significantly improved. The application of TiN as an infrared reflective layer can extend the service life of thermal control coatings, enhance the thermal control reliability of near-Earth space spacecraft, and at the same time expand the application potential of intelligent thermal control devices in inner solar system missions (such as solar exploration, Venus exploration, etc.). At the same time, TiN can be adapted to a variety of dielectric layers, such as BaF 2 、CsI、ZnSe、ZnO、HfO 2 、ZnS, and the spectral performance of the device does not decay during high and low temperature stability tests.

[0023] III. The emissivity change value of the wide-temperature intelligent thermal control device prepared by the present invention is 0.52, the emissivity change value after the high temperature stability test is 0.52, and the emissivity change value after the low temperature stability test is 0.51. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the film system structure of the wide-temperature intelligent thermal control device of the present invention;

[0025] Figure 2 It is the spectrogram of the wide-temperature intelligent thermal control device prepared in Example 1. From left to right, they are the variable temperature infrared reflection spectra of the device before the high and low temperature stability tests, the variable temperature infrared reflection spectra of the device after the high temperature stability test, and the variable temperature infrared reflection spectra of the device after the low temperature stability test. DETAILED DESCRIPTION OF THE INVENTION

[0026] DETAILED DESCRIPTION OF THE INVENTION I: A wide-temperature intelligent thermal control device in this embodiment is composed of a substrate, an infrared mirror layer, a dielectric layer and a phase change layer; the infrared mirror layer, the dielectric layer and the phase change layer are sequentially arranged on the substrate to form a Fabry-Pérot cavity structure.

[0027] The infrared mirror layer described above is TiN;

[0028] The dielectric layer described above is BaF 2 , CsI, HfO 2 , ZnO, ZnS or ZnSe;

[0029] The phase change layer described above is a W-doped VO 2 thin film.

[0030] Specific Embodiment 2: The difference between this embodiment and Specific Embodiment 1 is that: the infrared mirror layer described above is TiN, and the dielectric layer described above is BaF 2 , and the phase change layer described above is VO 2 ; the thickness of TiN is 350 nm, and the thickness of BaF 2 is 1800 nm, and the thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Specific Embodiment 1.

[0031] Specific Embodiment 3: The difference between this embodiment and one of Specific Embodiments 1 or 2 is that: the infrared mirror layer described above is TiN, the dielectric layer described above is CsI, and the phase change layer described above is VO 2 ; the thickness of TiN is 350 nm, the thickness of CsI is 1200 nm, and the thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Specific Embodiment 1 or 2.

[0032] Specific Embodiment 4: The difference between this embodiment and one of Specific Embodiments 1 to 3 is that: the infrared mirror layer described above is TiN, the dielectric layer described above is ZnSe, and the phase change layer described above is VO 2 ; the thickness of TiN is 350 nm, the thickness of ZnSe is 1150 nm, and the thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Specific Embodiments 1 to 3.

[0033] Specific Embodiment 5: The difference between this embodiment and one of Specific Embodiments 1 to 4 is that: the infrared mirror layer described above is TiN, the dielectric layer described above is ZnO, and the phase change layer described above is VO 2 ; the thickness of TiN is 350 nm, the thickness of ZnO is 1100 nm, and the thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Specific Embodiments 1 to 4.

[0034] Specific Embodiment 6: The difference between this embodiment and one of Specific Embodiments 1 to 5 is that: the infrared mirror layer described above is TiN, the dielectric layer described above is HfO 2 , and the phase change layer described above is VO 2; The thickness of TiN is 350 nm, and the thickness of HfO 2 is 800 nm. The thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Embodiments 1 to 5.

[0035] Embodiment 7: The difference between this embodiment and any one of Embodiments 1 to 6 is that the infrared mirror layer is TiN, the dielectric layer is ZnS, and the phase change layer is VO 2 ; The thickness of TiN is 350 nm, the thickness of ZnS is 1300 nm, and the thickness of the W-doped VO 2 thin film is 40 nm. Other steps are the same as those in Embodiments 1 to 6.

[0036] Embodiment 8: This embodiment is a preparation method of a wide-temperature-range intelligent thermal control device, which is specifically completed according to the following steps:

[0037] I. Cleaning the substrate:

[0038] Place the substrate in deionized water, ethanol, and acetone in sequence and ultrasonically clean for a period of time, and then blow dry with nitrogen to obtain a substrate with a clean surface;

[0039] II. Preparing the infrared mirror layer:

[0040] Under the conditions of a background vacuum degree of 10 -3 Pa to 10 -5 Pa, a temperature of 200°C to 300°C, an argon gas flow rate of 70 sccm to 100 sccm, a nitrogen gas flow rate of 7 sccm to 10 sccm, a gas pressure of 0.4 Pa to 0.9 Pa, and a sputtering power of 150 W to 180 W, using Ti as the target material, deposit a TiN thin film on the substrate by DC sputtering technology; then anneal for a period of time under the conditions of a nitrogen atmosphere and a temperature of 400°C to 500°C to obtain a substrate containing the infrared mirror layer;

[0041] III. Preparing the dielectric layer:

[0042] Under the conditions of a background vacuum degree of 10 -6 Pa to 10 -8 Pa, a substrate temperature of room temperature to 100°C, a target material power of 2 kW to 5 kW, and a deposition rate of using BaF 2 , CsI, HfO 2 , ZnO, ZnS, or ZnSe powder as the evaporation material, deposit a BaF 2 , CsI, HfO 2 , ZnO, ZnS, or ZnSe thin film on the substrate containing the infrared mirror layer by electron beam evaporation technology to obtain a substrate containing the dielectric layer;

[0043] IV. Under the conditions of a frequency of 400 Hz to 450 Hz, a pulse width of 50 μs to 100 μs, a power of 180 W to 200 W, a background vacuum degree of 5×10 -4 Pa to 1×10 -5 Pa, a deposition pressure of 0.4 Pa to 0.9 Pa, an argon gas flow rate of 80 sccm - 100 sccm, an oxygen gas flow rate of 1.0 sccm to 1.5 sccm, and a substrate temperature of 200 °C to 400 °C, using a tungsten - vanadium alloy as a target, adopting high - energy pulsed magnetron sputtering technology to deposit a W - doped VO 2 thin film on a substrate with a dielectric layer; then annealing for a period of time under the conditions of an argon gas atmosphere and a temperature of 480 °C to 580 °C to obtain a wide - temperature - range intelligent thermal control device.

[0044] Specific Embodiment Nine: The difference between this embodiment and any one of Specific Embodiments One to Eight is that: the substrate described in Step One is quartz; in Step One, the substrate is successively placed in deionized water, ethanol, and acetone and ultrasonically cleaned for 20 min to 30 min respectively. Other steps are the same as those in Specific Embodiments One to Eight.

[0045] Specific Embodiment Ten: The difference between this embodiment and any one of Specific Embodiments One to Nine is that: the annealing time described in Step Two is 1 h to 3 h; the annealing time described in Step Four is 2 h to 6 h; the atomic fraction of tungsten in the tungsten - vanadium alloy described in Step Four is 2%. Other steps are the same as those in Specific Embodiments One to Nine.

[0046] The following examples are used to verify the beneficial effects of the present invention:

[0047] Example 1: A wide - temperature - range intelligent thermal control device is composed of a substrate, an infrared mirror layer, a dielectric layer, and a phase - change layer; the infrared mirror layer is TiN with a thickness of 350 nm; the dielectric layer is BaF 2 , with a thickness of 1800 nm; the phase - change layer is VO 2 , with a thickness of 40 nm;

[0048] The preparation method of the wide - temperature - range intelligent thermal control device is specifically completed according to the following steps:

[0049] I. Cleaning the substrate:

[0050] The substrate is successively placed in deionized water, ethanol, and acetone and ultrasonically cleaned for 20 min respectively, and then dried with nitrogen to obtain a substrate with a clean surface;

[0051] The substrate described in Step One is quartz;

[0052] II. Preparing the infrared mirror layer:

[0053] Under the conditions of a background vacuum of 1×10 -4 Pa, a temperature of 250 °C, an argon gas flow rate of 80 sccm, a nitrogen gas flow rate of 8 sccm, a gas pressure of 0.4 Pa, and a sputtering power of 180 W, using Ti as the target, TiN thin films were deposited on the substrate by DC sputtering technology for 3 h; then annealing treatment was carried out for 3 h under the conditions of a nitrogen atmosphere and a temperature of 500 °C to obtain a substrate containing an infrared mirror layer;

[0054] III. Preparation of the dielectric layer:

[0055] Under the conditions of a background vacuum of 1×10 -7 Pa, a substrate temperature of 100 °C, a target power of 3 kW, and a deposition rate of Using BaF 2 powder as the evaporation material, BaF 2 thin films were deposited on the substrate containing the infrared mirror layer by electron beam evaporation technology for 50 min to obtain a substrate containing the dielectric layer;

[0056] IV. Under the conditions of a frequency of 400 Hz, a pulse width of 80 μs, a power of 180 W, a background vacuum of 1×10 -4 Pa, a deposition pressure of 0.4 Pa, an argon gas flow rate of 80 sccm, an oxygen gas flow rate of 1.5 sccm, and a substrate temperature of 200 °C, using a tungsten-vanadium alloy as the target, W-doped VO 2 thin films were deposited on the substrate with the dielectric layer by high-energy pulsed magnetron sputtering technology for 5 min; then annealing treatment was carried out for 5 h under the conditions of an argon atmosphere and a temperature of 500 °C to obtain a wide-temperature-range intelligent thermal control device;

[0057] The atomic fraction of tungsten in the tungsten-vanadium alloy described in step IV is 2%.

[0058] A self-made temperature control device with heating and cooling modes was used to adjust the temperature of the sample. According to repeated measurements, the temperature error of the sample was less than 0.5 °C. The temperature was measured by a thermocouple in contact with the regulator. During the test, the temperature of the device was controlled at 0 °C and 60 °C respectively, and the infrared reflection spectrum was measured by using an A562 integrating sphere through a Vertex 70 Fourier transform infrared spectrometer.

[0059] According to Kirchhoff's law, the infrared emissivity can be calculated from the reflection spectrum using the following two equations:

[0060]

[0061] where c 1 represents the first radiation constant, c 2represents the second radiation constant, λ represents the wavelength, and T represents the temperature. The change value of emissivity is the difference between the high-temperature and low-temperature emissivities.

[0062] The device was subjected to a high-temperature treatment at 500 °C for 1 hour in a tubular furnace under an argon atmosphere, and the spectrum of the device was re-measured and the emissivity was calculated. The conditions for spectral testing and emissivity calculation were the same as above.

[0063] The device was immersed in liquid nitrogen for 1 hour of low-temperature treatment, and the spectrum of the device was re-measured and the emissivity was calculated. The conditions for spectral testing and emissivity calculation were the same as above.

[0064] Figure 2 is the spectral diagram of the wide-temperature-range intelligent thermal control device prepared in Example 1. From left to right, they are the variable-temperature infrared reflection spectrum of the device before the high- and low-temperature stability tests, the variable-temperature infrared reflection spectrum of the device after the high-temperature stability test, and the variable-temperature infrared reflection spectrum of the device after the low-temperature stability test;

[0065] From Figure 2 it can be seen that the change value of the emissivity of the wide-temperature-range intelligent thermal control device prepared in Example 1 is 0.52, the change value of the emissivity after the high-temperature stability test is 0.52, and after the low-temperature stability test, the change value of the emissivity is 0.51.

[0066] Example 2: The difference between this example and Example 1 is that a wide-temperature-range intelligent thermal control device is composed of a substrate, an infrared reflector layer, a dielectric layer, and a phase-change layer; the infrared reflector layer is TiN with a thickness of 400 nm; the dielectric layer is BaF 2 , with a thickness of 1500 nm; the phase-change layer is a W-doped VO 2 thin film with a thickness of 50 nm. Other steps and parameters are the same as those in Example 1.

[0067] The change value of the emissivity of the wide-temperature-range intelligent thermal control device prepared in Example 2 is 0.47, the change value of the emissivity after the high-temperature stability test is 0.47, and after the low-temperature stability test, the change value of the emissivity is 0.47.

[0068] Example 3: The difference between this example and Example 1 is that a wide-temperature-range intelligent thermal control device is composed of a substrate, an infrared reflector layer, a dielectric layer, and a phase-change layer; the infrared reflector layer is TiN with a thickness of 500 nm; the dielectric layer is BaF 2 , with a thickness of 1900 nm; the phase-change layer is a W-doped VO 2 thin film with a thickness of 35 nm. Other steps and parameters are the same as those in Example 1.

[0069] The emissivity change value of the wide-temperature-range intelligent thermal control device prepared in Example 3 is 0.48. After the high-temperature stability test, the emissivity change value is 0.48. After the low-temperature stability test, the emissivity change value is 0.47.

[0070] Example 4: A wide-temperature-range intelligent thermal control device consists of a substrate, an infrared mirror layer, a dielectric layer, and a phase-change layer. The infrared mirror layer is TiN with a thickness of 350 nm. The dielectric layer is ZnSe with a thickness of 1150 nm. The phase-change layer is a W-doped VO 2 thin film with a thickness of 40 nm. Step 3: Prepare the dielectric layer. Under the conditions of a background vacuum of 1×10 -7 Pa, a substrate temperature of 100 °C, a target power of 4 kW, and a deposition rate of , using ZnSe powder as the evaporation material, deposit a ZnSe thin film on the substrate with the infrared mirror layer by electron beam evaporation technology to obtain a substrate with the dielectric layer. Other steps and parameters are the same as those in Example 1.

[0071] The emissivity change value of the TiN-ZnSe-VO 2 wide-temperature-range intelligent thermal control device prepared in Example 4 is 0.49. After the high-temperature stability test, the emissivity change value is 0.48. After the low-temperature stability test, the emissivity change value is 0.49.

[0072] Example 5: A wide-temperature-range intelligent thermal control device consists of a substrate, an infrared mirror layer, a dielectric layer, and a phase-change layer. The infrared mirror layer is TiN with a thickness of 350 nm. The dielectric layer is HfO 2 , with a thickness of 800 nm. The phase-change layer is a W-doped VO 2 thin film with a thickness of 40 nm. Step 3: Prepare the dielectric layer. Under the conditions of a background vacuum of 1×10 -8 Pa, a substrate temperature of 80 °C, a target power of 3 kW, and a deposition rate of , using HfO 2 powder as the evaporation material, deposit an HfO 2 thin film on the substrate with the infrared mirror layer by electron beam evaporation technology to obtain a substrate with the dielectric layer. Other steps and parameters are the same as those in Example 1.

[0073] The emissivity change value of the wide-temperature-range intelligent thermal control device prepared in Example 5 is 0.47. After the high-temperature stability test, the emissivity change value is 0.48. After the low-temperature stability test, the emissivity change value is 0.46.

Claims

1. A wide temperature range intelligent thermal control device, characterized in that A wide temperature range intelligent thermal control device is composed of a substrate, an infrared reflector layer, a dielectric layer and a phase change layer; the infrared reflector layer, the dielectric layer and the phase change layer are sequentially arranged on the substrate to form a Fabry-Pérot cavity structure; The infrared reflector layer is TiN; The dielectric layer is BaF2, CsI, HfO2, ZnO, ZnS or ZnSe; The phase change layer is a W-doped VO2 film.

2. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is BaF2, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of BaF2 is 1800nm, and the thickness of the W-doped VO2 film is 40nm.

3. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is CsI, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of CsI is 1200nm, and the thickness of the W-doped VO2 film is 40nm.

4. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is ZnSe, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of ZnSe is 1150nm, and the thickness of the W-doped VO2 film is 40nm.

5. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is ZnO, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of ZnO is 1100nm, and the thickness of the W-doped VO2 film is 40nm.

6. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is HfO2, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of HfO2 is 800nm, and the thickness of the W-doped VO2 film is 40nm.

7. The wide temperature range intelligent thermal control device according to claim 1, characterized in that The infrared reflector layer is TiN, the dielectric layer is ZnS, and the phase change layer is VO2; the thickness of TiN is 350nm, the thickness of ZnS is 1300nm, and the thickness of the W-doped VO2 film is 40nm.

8. The method for preparing a wide temperature range intelligent thermal control device according to claim 1, characterized in that The preparation method is specifically completed according to the following steps:

1. Cleaning the substrate: The substrate is placed in deionized water, ethanol and acetone for ultrasonic cleaning for a period of time, and then blown dry with nitrogen to obtain a substrate with a clean surface; 2. Preparation of infrared reflector layer: At a background vacuum of 10 -3 Pa~10 -5 Pa, temperature of 200°C to 300°C, argon gas flow rate of 70sccm to 100sccm, nitrogen gas flow rate of 7sccm to 10sccm, gas pressure of 0.4Pa to 0.9Pa and sputtering power of 150W to 180W, using Ti as target material, a TiN film is deposited on a substrate by DC sputtering technology; then annealing is performed for a period of time in a nitrogen atmosphere at a temperature of 400°C to 500°C to obtain a substrate containing an infrared reflector layer; 3. Preparation of dielectric layer: At a background vacuum of 10 -6 Pa~10 -8 Pa, substrate temperature is room temperature ~ 100 ° C, target power is 2kW ~ 5kW and deposition rate is Under the conditions of , using BaF2, CsI, HfO2, ZnO, ZnS or ZnSe powder as evaporation material, an electron beam evaporation technique is used to deposit a BaF2, CsI, HfO2, ZnO, ZnS or ZnSe thin film on a substrate containing an infrared reflector layer to obtain a substrate containing a dielectric layer; 4. At a frequency of 400Hz to 450Hz, a pulse width of 50μs to 100μs, a power of 180W to 200W, and a background vacuum of 5×10 -4 Pa~1×10 -5 Under the conditions of 0.4Pa-0.9Pa, deposition pressure of 0.4Pa-0.9Pa, argon flow rate of 80sccm-100sccm, oxygen flow rate of 1.0sccm-1.5sccm and substrate temperature of 200℃-400℃, tungsten-vanadium alloy is used as the target and high-energy pulse magnetron sputtering technology is used to deposit W-doped VO2 film on a substrate with a dielectric layer; then annealing treatment is carried out in argon atmosphere and temperature of 480℃-580℃ for a period of time to obtain a wide temperature range intelligent thermal control device.

9. The method for preparing a wide temperature range intelligent thermal control device according to claim 8, characterized in that The substrate described in step one is quartz; in step one, the substrate is placed in deionized water, ethanol and acetone in turn and ultrasonically cleaned for 20 minutes to 30 minutes respectively.

10. The method for preparing a wide temperature range intelligent thermal control device according to claim 8, characterized in that The annealing time in step 2 is 1 h to 3 h; the annealing time in step 4 is 2 h to 6 h; the atomic fraction of tungsten in the tungsten-vanadium alloy in step 4 is 2%.

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