Heating assembly and semiconductor processing equipment thereof

Abstract

The invention discloses a heating assembly and semiconductor processing equipment thereof, the heating assembly is arranged above a reaction chamber, the reaction chamber is used for processing a wafer, and the heating assembly comprises an inner reflection cylinder; the plurality of heat radiation devices are arranged around the periphery of the inner reflection cylinder and provide heat radiation for the wafer; the height of the bottom of the inner reflection cylinder is lower than that of the heat radiation device so as to partially block reflected heat radiation; the inner reflection cylinder comprises a first blocking area, a second blocking area and a third blocking area in the circumferential direction, the heat radiation blocking heights of the first blocking area, the second blocking area and the third blocking area are sequentially increased, so that heat radiation received by all directions of the surface of the wafer is not completely the same, and the first blocking area and the second blocking area are at least partially and alternately arranged. Through the combination of the blocking areas of the inner reflection cylinder, the heat energy generated by the heat radiation device can be selectively radiated / reflected to different areas on the surface of the wafer, and then the heat energy distribution states of the multiple areas in the corresponding radial direction are adjusted in a differentiated mode.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and particularly to a heating component and a semiconductor processing device thereof. Background Art

[0002] With the vigorous development of semiconductor technology and the increasing integration of devices, the size of chips is getting smaller and smaller. In order to ensure the quality of chips, the process requirements for semiconductors are becoming more and more stringent. Currently, processes such as plasma etching, Physical Vapor Deposition (PVD for short), and Chemical Vapor Deposition (CVD for short) are often used for microfabrication of semiconductor workpieces or substrates, such as manufacturing flexible display screens, flat panel displays, light emitting diodes, solar cells, etc. Microfabrication manufacturing involves a variety of different process steps. Among them, the Chemical Vapor Deposition process is more widely used. This process can deposit a variety of materials, including a wide range of insulating materials, most metal materials, and metal alloy materials. For example, materials such as silicon, silicon carbide, and zinc oxide are deposited on wafers or other surfaces.

[0003] A semiconductor device requires thousands of process steps from a silicon wafer to the final packaging. The multiple process steps bring inevitable complexity during processing. In the entire process flow, the environment for wafer surface treatment is very harsh. For example, during the process of depositing a thin film on the wafer surface, factors such as the energy distribution on the wafer surface, the uniformity of the gas flow field, and the accuracy of the reaction temperature are all crucial. They directly or indirectly determine the quality of the thin film deposition on a specific area of the wafer surface. With the increase in the number of different devices processed in different areas on the same wafer surface, it is necessary to simultaneously perform differential fine regulation on multiple specific areas of the wafer surface. For example, different areas are adjusted to different temperatures. Currently, although there is a solution to adjust the temperature distribution uniformity on the wafer surface by changing the structure of the inner reflection cylinder, thereby improving the overall film formation uniformity of the wafer, however, such a solution cannot achieve differential adjustment of the temperatures of multiple (more than three) different areas on the wafer surface. Therefore, it is necessary to improve the existing equipment.

[0004] It can be understood that the above statements only provide background art related to the present invention and do not necessarily constitute prior art. Summary of the Invention

[0005] Based on the foregoing technical problems, the object of the present invention is to provide a heating component and a semiconductor processing device thereof. The heating component can radiate the thermal energy generated by the thermal radiation device to different areas of the wafer surface through each blocking area of the inner reflection cylinder, and then differentially adjust the thermal energy distribution state corresponding to each area.

[0006] To achieve the above object, the present invention is implemented through the following technical solutions:

[0007] A heating component, the heating component is arranged above the reaction chamber, the reaction chamber is used for processing wafers, and the heating component includes:

[0008] An internal reflection cylinder;

[0009] A plurality of thermal radiation devices, arranged around the periphery of the internal reflection cylinder, providing thermal radiation to the wafers;

[0010] The height of the bottom of the internal reflection cylinder is lower than the height of the thermal radiation devices to partially block the reflection of the thermal radiation;

[0011] The internal reflection cylinder circumferentially includes at least a first blocking area, a second blocking area and a third blocking area, and the blocking heights of the first blocking area, the second blocking area and the third blocking area for the thermal radiation increase in sequence, so that the thermal radiation received by each azimuth of the wafer surface is not completely the same, wherein the first blocking area and the second blocking area are at least partially alternately arranged.

[0012] Optionally, the circumferential arc length corresponding to the first blocking area is greater than the circumferential arc length corresponding to the second blocking area.

[0013] Optionally, the circumferential arc length corresponding to the first blocking area is 1 to 10 times the circumferential arc length corresponding to the second blocking area.

[0014] Optionally, there is a first blocking area between the third blocking area and the second blocking area.

[0015] Optionally, there is a first blocking area between multiple third blocking areas.

[0016] Optionally, there is an alternating arrangement structure of the first blocking area and the second blocking area between at least two third blocking areas.

[0017] Optionally, the power of each thermal radiation device can be individually regulated.

[0018] Optionally, each thermal radiation device is uniformly arranged circumferentially.

[0019] Optionally, the number of thermal radiation devices corresponding to the first blocking area is greater than the number of thermal radiation devices corresponding to the second blocking area.

[0020] Optionally, the height distance range between the thermal radiation device and the bottom edge of the first blocking area is 25 mm to 100 mm.

[0021] Optionally, the internal reflection cylinder further includes a connection ring connected to the tops of the first blocking area, the second blocking area and the third blocking area.

[0022] Optionally, at least part of the structure of the heating component includes a heat reflection layer, and the at least part of the structure includes the outer surface of the inner reflection cylinder.

[0023] Optionally, the heat reflection layer is at least one of a gold plating layer, a nickel plating layer, or a composite material with high light reflection ability.

[0024] Optionally, it further includes:

[0025] A lifting structure, which is connected to the inner reflection cylinder, and the lifting structure can drive the inner reflection cylinder to lift.

[0026] Optionally, it further includes:

[0027] A top reflector, which is arranged above each of the heat radiation devices.

[0028] Optionally, there is an angle between the bottom surface of the top reflector and the horizontal plane.

[0029] Optionally, the range of the angle is 0 to 12°.

[0030] Optionally, the angle between the bottom surface of the top reflector and the horizontal plane is adjustable.

[0031] Optionally, it further includes:

[0032] An outer reflection cylinder, which is arranged around the outside of each of the heat radiation devices and can reflect the radiation reflected by the inner reflection cylinder.

[0033] Optionally, a semiconductor processing device includes:

[0034] A reaction chamber, which is used to process wafers;

[0035] The aforementioned heating component, and the heating component is arranged above the reaction chamber to provide heat radiation into the reaction chamber.

[0036] The present invention has the following advantages compared with the prior art:

[0037] In a heating component and a semiconductor processing device thereof according to the present invention, through the combination of each blocking area of the inner reflection cylinder, the heating component can selectively radiate / reflect the heat energy generated by the heat radiation device to different areas on the surface of the wafer, thereby differentially adjusting the heat energy distribution state of at least three areas in the corresponding radial direction. Description of the Drawings

[0038] Figure 1 It is a schematic diagram of a semiconductor processing device according to the present invention;

[0039] Figure 2 It is a schematic diagram of an inner reflection cylinder according to the present invention;

[0040] Figure 3 For Figure 2 Thermal energy radiation schematic diagram of the internal reflection cylinder;

[0041] Figure 4 Another schematic diagram of the internal reflection cylinder of the present invention;

[0042] Figure 5 Schematic diagram of multi-stage thermal energy radiation of the present invention;

[0043] Figure 6 Another schematic diagram of the internal reflection cylinder of the present invention. Specific implementation manner

[0044] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0045] As Figure 1 shown, it is a schematic diagram of a semiconductor processing apparatus 100 (chemical vapor deposition apparatus CVD) of the present invention. The apparatus includes a reaction chamber 110 for processing a wafer W. A processing space is formed inside the reaction chamber 110. A tray 120 is disposed in the processing space. The tray 120 is used to carry one or more wafers W for performing a chemical vapor deposition process, and the chemical vapor deposition process includes depositing a material on the upper surface of the wafer W. The reaction cavity of the reaction chamber 110 has an upper cavity wall 111 at the top and a lower cavity wall 112 at the bottom. Optionally, the upper cavity wall 111 and the lower cavity wall 112 are made of an optically transparent or semi-transparent material that can transmit thermal radiation (such as quartz material transparent to a specific infrared band). An intake opening 113 and an exhaust opening 114 are respectively formed on both sides of the reaction chamber 110. The processing space of the reaction chamber 110 includes an intake area corresponding to the intake opening 113, an exhaust area corresponding to the exhaust opening 114, and a reaction area between the intake area and the exhaust area. The wafer W is located in the reaction area for performing a chemical vapor deposition process. As Figure 1 indicated by the arrow direction in

[0046] In this embodiment, below the tray 120, there is an extension tube 121 extending downward. A rotating shaft 122 is disposed in the extension tube 121. At the top of the rotating shaft 122, there are multiple support rods 123 for supporting and driving the tray 120, so that the wafer W carried by the tray 120 rotates in the reaction chamber 110 to ensure the effect of uniform thin film deposition on the wafer W. Optionally, the rotating shaft 122 can be made of a non-metallic material to reduce the risk of being contaminated by particles.

[0047] Further, the semiconductor processing equipment 100 further includes an external housing 130. The upper chamber wall 111 and the lower chamber wall 112 are respectively mounted in the external housing 130 through flanges. The external housing 130 surrounds and covers the upper chamber wall 111 and the lower chamber wall 112. An upper accommodation space is formed between the inner wall of the external housing 130 and the outer wall of the upper chamber wall 111, and a lower accommodation space is formed between the inner wall of the external housing 130 and the outer wall of the lower chamber wall 112.

[0048] Further, the equipment further includes a plurality of radiation heat sources 140 for providing heat energy to the reaction chamber 110 and the wafer W. Each radiation heat source 140 is disposed outside the reaction chamber 110 to heat the reaction chamber 110 and the wafer W therein. Optionally, the radiation heat source 140 is a high-intensity tungsten filament lamp with a transparent quartz outer shell and containing a halogen gas such as iodine. Only a small part of the radiant heat energy generated by the high-intensity tungsten filament lamp is absorbed by the upper chamber wall 111 or the lower chamber wall 112, so as to ensure that the heat energy generated by each radiation heat source 140 reaches the wafer W and the tray 120 in the reaction chamber 110 maximally. During the process treatment, the reaction chamber 110 and the wafer W in the chemical vapor deposition device reach the required process temperature through each radiation heat source 140, so that the reaction gas in the reaction chamber 110 undergoes thermal decomposition, thereby depositing a thin film material on the upper surface of the wafer W. Optionally, the deposited thin film material is a semiconductor material such as silicon and germanium, and may also include other doping materials such as group III, group IV, and / or group V materials. In this embodiment, a plurality of radiation heat sources 140 are disposed in the lower accommodation space, and each radiation heat source 140 is disposed along the circumferential direction of the wafer W to realize heating of the tray 120 and the wafer W carried thereon. The radiant heat energy power of the radiation heat source 140 is used to bear the main heating effect on the wafer W.

[0049] As can be seen from the foregoing, with the development of semiconductor technology and the improvement of the complexity of integrated circuit preparation, the demand for fine regulation of the wafer W surface is getting higher and higher. Among them, the regulation of the wafer W surface temperature is particularly important. The temperature of the wafer W surface directly affects the growth rate and quality of the thin film on the wafer W surface. Currently, the temperature regulation usually adjusts the temperature in the reaction chamber as a whole to improve the overall temperature uniformity of the wafer surface, lacking differential fine regulation of the temperatures of multiple different specific regions.

[0050] Based on the above problems, the present invention provides a heating component 150, which is arranged above the reaction chamber 110 to provide thermal radiation into the reaction chamber 110. The heating component 150 combines a thermal radiation device 151 and an internal reflection cylinder 152, which is equivalent to a regional temperature adjustment component, and can make the surface of the wafer W have multiple radiation regions and multiple thermal energy distribution states, so as to realize the differential and fine zoning control of the thermal energy distribution above the surface of the wafer W.

[0051] Specifically, as Figure 1 and Figure 2 shown, the heating component 150 includes a plurality of thermal radiation devices 151 and an internal reflection cylinder 152. The thermal radiation devices 151 are used to provide thermal radiation to the wafer W. Each thermal radiation device 151 is arranged around the periphery of the internal reflection cylinder 152. The height of the bottom of the internal reflection cylinder 152 is lower than the height of the thermal radiation device 151 to partially block and reflect the thermal radiation. The internal reflection cylinder 152 at least includes a first blocking area 153, a second blocking area 154 and a third blocking area 155 along the circumferential direction. The blocking heights of the first blocking area 153, the second blocking area 154 and the third blocking area 155 for the thermal radiation increase in sequence, so that the thermal radiation received by each azimuth / area on the surface of the wafer W is not completely the same, and the first blocking area 153 and the second blocking area 154 are at least partially arranged alternately. Wherein, the thermal radiation blocking height is the length range / distance from the bottom edge of the baffle area to the surface of the wafer W. The thermal radiation device 151 can adopt the same component as the radiation heat source 140, or can be a radiation heat source such as a visible light lamp, an infrared lamp or an ultraviolet lamp. The temperature distribution adjustability can be further increased by setting thermal radiation devices 151 with different radiation wavelengths.

[0052] The heating component 150 can selectively penetrate / reflect the thermal energy radiation generated by the thermal radiation device 151 to different areas on the surface of the wafer W through each blocking area of the internal reflection cylinder 152, as Figure 2 and Figure 3As shown in combination, the bottom height of the third blocking region 155 determines the blocking boundary of the thermal radiation region, and the bottom height of the first blocking region 153 determines the depth / radial range of the thermal radiation region extending from the blocking boundary towards the center of the wafer W. The first blocking region 153, the second blocking region 154, and the third blocking region 155 are arranged circumferentially. By the circumferential arc lengths of the three circumferentially arranged blocking regions and the bottom heights of each blocking region, the radiant energy of the thermal radiation device 151 can be selectively transmitted or blocked and reflected. Since there are multiple thermal radiation devices 151 arranged circumferentially, considering that the less blocked, the higher the temperature, and the central region of the wafer is radiated by the thermal radiation devices 151 from multiple circumferential sides. Thus, through the setting of multiple blocking regions, overlapping / shielding of multiple thermal radiation regions can be achieved in the radial and circumferential ranges of the wafer. It can be understood that the temperature is high at the overlapping part of the thermal radiation, while the temperature is low in the blocked and shielded regions, thereby adjusting the thermal energy distribution state of each corresponding region and forming multiple (more than three) differentiated temperature region distributions.

[0053] As can be seen from the above, the set height of the bottom of the first blocking region 153 affects the radial range of the thermal energy distribution region where the thermal radiation device 151 irradiates the surface of the wafer W. Optionally, the height distance "D" between the thermal radiation device 151 and the bottom of the first blocking region 153 ranges from 25 mm to 100 mm to better cooperate with the radiation angle of the thermal radiation device 151.

[0054] Furthermore, during the process reaction (such as the epitaxial growth process), the susceptor 120 and the wafer W carried thereon are mainly heated to the required temperature (such as about 1000 °C) by the radiation heat source 140. The process gas required for epitaxial growth flows into the reaction chamber 110 through the gas inlet opening 113, and then diffuses to the reaction region for chemical deposition process. However, in the initial stage when the process gas enters the reaction chamber 110, its temperature is usually lower than the temperature inside the reaction chamber 110, that is, the temperature of the wafer W and the space above it. The temperature of the process gas will gradually increase during the subsequent diffusion process towards the exhaust opening 114 and the two side directions. That is, the temperature of the process gas in the region near the gas inlet opening 113 changes in a gradient manner, which easily leads to inaccurate control of the process in this region and affects the quality of thin film deposition.

[0055] Based on the above problems, this problem can be solved by designing each blocking region of the reflection cylinder 152 in the heating assembly 150. Exemplarily, such as Figure 2As shown, the inner reflection cylinder 152 of the heating component 150 includes a first blocking area 153, two second blocking areas 154, and two third blocking areas 155 in the orientation towards the intake opening 113. Among them, the first blocking area 153 faces the direction of the intake opening 113, the two second blocking areas 154 are respectively located on both sides of the first blocking area 153, and the two third blocking areas 155 are respectively adjacent to the two second blocking areas 154. The three types of blocking areas have different blocking heights for thermal energy, and other corresponding conditions are the same (such as the number or power of the corresponding thermal radiation devices 151). As Figure 3 shown, the inner reflection cylinder 152 enables the thermal energy generated by the thermal radiation device 151 to have three distribution states in the area near the intake opening 113 on the surface of the wafer W. The first blocking area 153 blocks the least amount of thermal energy, and the corresponding area on the surface of the wafer W has the largest radial range, and this area faces the intake opening 113. The blocking effect of the second blocking area 154 is the second, and the third blocking area 155 blocks the most thermal energy, and the corresponding area on the surface of the wafer W has the smallest radial range. After the process gas enters the interior of the reaction chamber 110 from the intake opening 113, due to the movement inertia, it will preferentially enter the area facing the intake opening 113. Part of the process gas will diffuse to the area corresponding to the second blocking area 154, and the radial diffusion range of the process gas in the area corresponding to the first blocking area 153 is greater than that in the area corresponding to the second blocking area 154. The thermal energy radiated by the thermal radiation device 151 to these areas will perform temperature compensation on the process gas, making the temperature of the process gas in this area uniform, which helps to make up for the uneven temperature gradient change caused by the different diffusion depths of the process gas in the cavity.

[0056] It can be understood that the arrangement of the first blocking area 153, the second blocking area 154, and the third blocking area 155 is not limited to the above. In other embodiments, it can also be / include other arrangement methods, and the present invention does not limit this. For example, in one embodiment, a first blocking area 153 is spaced between multiple third blocking areas 155, so that there are two different thermal energy distribution states in the radial direction of a specific area on the surface of the wafer W (please see Figure 2 ). Further, in another embodiment, a first blocking area 153 is spaced between the third blocking area 155 and the second blocking area 154 (please see Figure 4 ), so that there are three different thermal energy distribution states in the radial direction on the surface of the wafer W, and the thermal energy of the corresponding three areas changes in a three-level gradient, which helps to obtain a film layer with an M-shaped, W-shaped, or S-shaped thickness distribution within the radius range of the wafer W. Further, at least one level of blocking area can be added, and the blocking thermal radiation height of this blocking area is different from that of the first, second, and third blocking areas 155, so as to form a multi-level thermal energy distribution state on the surface of the wafer W (please see Figure 5)。On the other hand, the first blocking region 153 and the second blocking region 154 can also be arranged in continuous alternation, that is, there is an alternating arrangement structure of the first blocking region 153 and the second blocking region 154 between at least two third blocking regions 155 to adjust the thermal energy distribution state of the corresponding region (please see Figure 6 )。

[0057] In this embodiment, each radiation heat source 140 heats the tray 120 in the space below the wafer W, and heat exchange is performed between the upper edge of the tray 120 and the edge of the wafer W, which easily causes the temperature of the edge region of the wafer W to be higher than the temperature of the inner central region of the wafer W during the process. At this time, the influence brought by the above problem can be reduced by adjusting the range / power of each blocking region of the inner reflection cylinder 152 of the heating assembly 150. For example, the height of the first blocking region 153 can be set so that the radiation of the thermal radiation device 151 radially opposite to any point on the edge of the wafer W cannot pass through the first blocking region 153 and reach the point on the opposite side, thereby suppressing the multiple radiation heating of the thermal radiation device 151 on the edge of the wafer W and improving the above problem.

[0058] In one embodiment, the parameters of each of the thermal radiation devices 151 are the same, and they are uniformly arranged along the circumferential direction for adjustment, that is, the number of thermal radiation devices 151 corresponding to the same circumferential arc length range region along the circumferential direction is the same. By adjusting the circumferential arc length of each blocking region, the number of thermal radiation devices 151 corresponding to each blocking region can be adjusted, thereby affecting the thermal energy distribution of each blocking region in the surface region of the wafer W.

[0059] Optionally, the circumferential arc length corresponding to the first blocking region 153 is 1 to 10 times the circumferential arc length corresponding to the second blocking region 154. When the circumferential arc length corresponding to the first blocking region 153 is equal to the circumferential arc length corresponding to the second blocking region 154, since the height of the first blocking region 153 for blocking thermal radiation is higher than that of the second blocking region 154, its range extending radially towards the center of the wafer W is larger, and the regulated area range is wider, that is, the lengths of the corresponding regions of the two blocking regions on the surface of the wafer W in the radial direction are different, and the region corresponding to the first blocking region 153 is closer to or falls within the central region of the wafer W. When the circumferential arc length corresponding to the first blocking region 153 is greater than the circumferential arc length corresponding to the second blocking region 154, the number of thermal radiation devices 151 corresponding to the first blocking region 153 is greater than the number of thermal radiation devices 151 corresponding to the second blocking region 154, and the radiant thermal energy of the region corresponding to the first blocking region 153 will also be more, so that the region corresponding to the first blocking region 153 on the surface of the wafer W becomes a high-power irradiation region, and the region corresponding to the second blocking region 154 on the surface of the wafer W becomes a low-power irradiation region to achieve the regulation of the thermal energy distribution state of different regions.

[0060] In practical applications, in addition to adjusting the thermal energy distribution of each region on the surface of the wafer W in the above manner, other adjustment methods can also be adopted. For example, the distribution of each thermal radiation device 151, the power of the thermal radiation device 151, etc. can be adjusted to realize the control of the thermal energy distribution state on the surface of the wafer W. Exemplarily, in a certain embodiment, the circumferential arc length of the first blocking region 153 is the same as that of the second blocking region 154, but the number of thermal radiation devices 151 corresponding to the first blocking region 153 is greater than the number of thermal radiation devices 151 corresponding to the second blocking region 154. At this time, the region corresponding to the first blocking region 153 on the surface of the wafer W is a high-power region.

[0061] On the other hand, optionally, the power of each thermal radiation device 151 can be individually controlled. In actual applications, according to the different temperature requirements of each region on the wafer W, the power of the thermal radiation devices 151 corresponding to each blocking region is adjusted, so as to realize the individual control of the temperature of each region of the wafer W. Thus, without changing the layout of the existing components inside the reaction chamber 110, the thermal energy distribution of each region on the surface of the wafer W can be independently and real-time adjusted, ensuring the yield of the wafer W processing.

[0062] Furthermore, as Figure 2 shown, the inner reflection cylinder 152 further includes a connection ring 156 connected to the tops of the first blocking region 153, the second blocking region 154, and the third blocking region 155, so as to facilitate the processing and installation of the inner reflection cylinder 152. In this embodiment, the first blocking region 153, the second blocking region 154, the third blocking region 155, and the connection ring 156 are of an integral structure. When actually installed and used, the connection ring 156 can be fixed on the top inner wall of the external housing 130 through a mechanical connection device, thereby realizing the fixation of the entire inner reflection cylinder 152.

[0063] The heating assembly 150 further includes a lifting structure 157, which is connected to the inner reflection cylinder 152 and can drive the inner reflection cylinder 152 to lift. In this embodiment, the lifting structure 157 is connected to the connection ring 156 and can be a part of the mechanical connection device or the mechanical connection device itself. The lifting structure 157 can change the distance "D" between the thermal radiation device 151 and the bottom edge of the first blocking region 153, so that the heating assembly 150 can independently and real-time adjust the radial range of the inner reflection cylinder 152 for adjusting the surface region of the wafer W.

[0064] Furthermore, as Figure 1As shown, the heating assembly 150 further includes an outer reflection cylinder 158 which is disposed around the outside of each of the thermal radiation devices 151 and can reflect the thermal radiation of the thermal radiation devices 151 and the radiation reflected by the inner reflection cylinder 152 to cooperate with the thermal radiation devices 151 and the inner reflection cylinder 152 to form multiple reflection temperature-controlled heating.

[0065] The heating assembly 150 further includes a top reflection plate 159 which is disposed above each of the thermal radiation devices 151 to reflect the heat energy generated by the thermal radiation devices 151, and then transfer the heat energy into the reaction chamber 110 as much as possible to improve the utilization rate of the heat energy. Further, there is an angle between the bottom surface of the top reflection plate 159 and the horizontal plane, and the top reflection plate 159 is inclined towards the inner reflection cylinder 152, so as to adjust the vertical reflection of the heat energy to inclined reflection, so that the heat energy can be radiated to the surface area of the wafer W as much as possible, and then accurately control the energy distribution in the reaction area. Optionally, the range of the angle between the bottom surface of the top reflection plate 159 and the horizontal plane is 0 to 12°. When the angles are different, the range of the heat energy reflected by the top reflection plate 159 will also be slightly different. It can be understood that the range of the angle is not limited to the above data. In other embodiments, it can also be other data ranges, and the present invention does not limit this. Further optionally, the angle between the bottom surface of the top reflection plate 159 and the horizontal plane is adjustable (the top reflection plate 159 can be connected to an adjustable structure that can be adjusted in real time) to change the heat energy reflection area, and cooperate with the top reflection plate 159 at different angles to realize the control of the heat energy distribution at more radial depths, so as to meet different adjustment requirements. In practical applications, at least one of the height of the top reflection plate 159, the circumferential distribution state of the thermal radiation devices 151, the power of the thermal radiation devices 151, the height of each blocking area, and the circumferential arc length can be set to adjust the corresponding area range (radial range and circumferential range) of each blocking area on the surface of the wafer W and the heat energy distribution state of each area on the surface of the wafer W, so as to meet different control requirements for the surface of the wafer W.

[0066] To further improve the thermal reflection effect of the inner reflection cylinder 152, the outer reflection cylinder 158 and the top reflection plate 159 and reduce heat loss, in this embodiment, the outer surface of the inner reflection cylinder 152, the inner surface of the outer reflection cylinder 158 and the bottom surface of the top reflection plate 159 all include a thermal reflection layer to enhance the reflection effect of the heat energy. The thermal reflection layer helps to reflect the heat energy generated by the thermal radiation devices 151 into the reaction chamber 110 as much as possible, improves the utilization rate of the heat energy generated by the thermal radiation devices 151, and reduces the energy loss in the process. Optionally, the thermal reflection layer is at least one of a gold plating layer, a nickel plating layer or a composite material with high light reflection ability. Of course, other materials can also be used for preparation, and the present invention does not limit this.

[0067] It should be noted that the embodiments of the present invention take three blocking regions as examples, but are not limited thereto. For example, the fourth blocking region, the fifth blocking region, etc. with different heights can be added to further refine the differential temperature control to meet the requirements of the temperature distribution of the film-forming devices in different regions on the wafer. Of course, with the increase of the blocking regions, the design difficulty and cost of the radiation reflection and projection optical path will increase, and a balance needs to be considered.

[0068] In summary, in a heating component 150 and a semiconductor processing apparatus 100 of the present invention, the heating component 150 can radiate the thermal energy generated by the thermal radiation device 151 to different regions on the surface of the wafer W through the respective blocking regions of the internal reflection cylinder 152. By the circumferential arc lengths of at least three blocking regions arranged circumferentially and the bottom heights of the respective blocking regions, the ranges of the respective regions radiated by the heating device to the wafer W can be determined, and thus the thermal energy distribution states of the corresponding respective regions can be adjusted.

[0069] It should be noted that in this article, the terms "include", "comprise", "have" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, article or terminal device. Without further limitation, the elements defined by the statement "include..." or "comprise..." do not exclude the existence of additional elements in the process, method, article or terminal device including the said elements.

[0070] It should be noted that the drawings are all in a very simplified form and use non-precise ratios, only for the purpose of conveniently and clearly assisting in explaining the purpose of the embodiments of the present invention.

[0071] Although the content of the present invention has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and substitutions to the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A heating component, characterized in that, The heating component is disposed above the reaction chamber for processing wafers, and the heating component includes: An internal reflection cylinder; A plurality of thermal radiation devices disposed around the periphery of the internal reflection cylinder to provide thermal radiation to the wafer; The height of the bottom of the internal reflection cylinder is lower than the height of the thermal radiation devices to partially block and reflect the thermal radiation; The internal reflection cylinder circumferentially includes at least a first blocking region, a second blocking region, and a third blocking region, and the blocking heights of the first blocking region, the second blocking region, and the third blocking region for the thermal radiation increase in sequence, so that the thermal radiation received by each azimuth of the wafer surface is not completely the same, wherein the first blocking region and the second blocking region are at least partially alternately arranged.

2. The heating component according to claim 1, characterized in that, The circumferential arc length corresponding to the first blocking region is greater than the circumferential arc length corresponding to the second blocking region.

3. The heating component according to claim 1 or 2, characterized in that, The circumferential arc length corresponding to the first blocking region is 1 to 10 times the circumferential arc length corresponding to the second blocking region.

4. The heating component according to claim 1, characterized in that, There is a first blocking region between the third blocking region and the second blocking region.

5. The heating component according to claim 1, characterized in that, There is a first blocking region between a plurality of the third blocking regions.

6. The heating component according to claim 1, characterized in that, There is an alternating arrangement structure of the first blocking region and the second blocking region between at least two third blocking regions.

7. The heating component according to claim 1, characterized in that, The power of each of the thermal radiation devices can be individually adjusted.

8. The heating component according to claim 1, characterized in that, Each of the thermal radiation devices is uniformly arranged circumferentially.

9. The heating component according to claim 1, characterized in that, The number of the thermal radiation devices corresponding to the first blocking region is greater than the number of the thermal radiation devices corresponding to the second blocking region.

10. The heating component according to claim 1, characterized in that, The height distance range between the thermal radiation device and the bottom edge of the first blocking region is 25 mm to 100 mm.

11. The heating component according to claim 1, characterized in that, The internal reflection cylinder further includes a connecting ring connected to the tops of the first blocking region, the second blocking region, and the third blocking region.

12. The heating component according to claim 1, characterized in that, At least part of the structure of the heating component includes a heat reflection layer, and at least part of the structure includes the outer surface of the internal reflection cylinder.

13. The heating component according to claim 12, characterized in that, The heat reflection layer is at least one of a gold plating layer, a nickel plating layer, or a composite material with high light reflection ability.

14. The heating component according to claim 1, characterized in that, It further includes: A lifting structure connected to the internal reflection cylinder, and the lifting structure can drive the internal reflection cylinder to lift.

15. The heating component according to claim 1, characterized in that, It further includes: A top reflection plate disposed above each of the thermal radiation devices.

16. The heating component according to claim 15, wherein There is an angle between the bottom surface of the top reflection plate and the horizontal plane.

17. The heating component according to claim 16, wherein The range of the angle is 0 to 12°.

18. The heating component according to claim 15, wherein The angle between the bottom surface of the top reflection plate and the horizontal plane is adjustable.

19. The heating component according to claim 1, wherein It further includes: An outer reflection cylinder disposed around the outside of each of the thermal radiation devices to reflect the radiation reflected by the internal reflection cylinder.

20. A semiconductor processing device, wherein It includes: A reaction chamber for processing wafers; The heating component according to any one of claims 1 to 19, wherein the heating component is disposed above the reaction chamber to provide thermal radiation into the reaction chamber.

Images