Laser array and driving circuit thereof
By sharing a high-performance second switching module in the laser array driving circuit, the problem of increased cost and power consumption of the laser array driving circuit in the prior art is solved, and a lower power consumption and cost are achieved while supporting narrower pulse width output.
Patent Information
- Application Number
- CN202311724839.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-14
- Publication Date
- 2025-06-17
AI Technical Summary
The existing laser array driving circuits increase significantly in cost and power consumption when outputting narrower pulse widths.
By sharing a high-performance second switching module, the power consumption and cost of the laser array driving circuit of the common anode is reduced.
This achieves a reduction in power consumption and cost of laser array driving circuits, while supporting narrower pulse width outputs.
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Figure CN120165296A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of laser array driving, and particularly relates to a laser array and its driving circuit. Background Art
[0002] With the explosive growth in the demand for solid-state area arrays and non-solid-state area array lidars, the application scope of multi-line array EELs (Edge Emitting Lasers) and VCSELs (Vertical Cavity Surface Emitting Lasers) has expanded from consumer electronics to the field of autonomous driving.
[0003] Generally, lidars are built with discrete components to build pulsed driving lasers. Currently, in the driving circuit of a laser array operating in a pulsed cluster mode, most use a common anode and achieve it by controlling the cathode discharge. However, in order to be able to output a narrower pulse width, by using high-performance switching devices in the cathode driving circuits of each laser, this will cause a significant increase in the cost and power consumption of the laser array driving circuit. Summary of the Invention
[0004] The present disclosure provides a laser array and its driving circuit, which reduces the power consumption and cost of the driving circuit of a common anode laser array by sharing a high-performance second switching module. The technical solution of the present disclosure is as follows:
[0005] An embodiment of the first aspect of the present disclosure proposes a driving circuit for a laser array, where the anodes of multiple lasers in the laser array are connected to a first power supply, and the driving circuit includes:
[0006] Multiple first switching modules, with the first end of each first switching module connected to the cathode of the corresponding laser;
[0007] A second switching module, with the first end of the second switching module connected to the second end of the corresponding first switching module, and the second end of the second switching module grounded;
[0008] Multiple addressing driving modules, with the first end of each addressing driving module connected to the third end of the corresponding first switching module, and the addressing driving module is used to control the on / off of the first switching module according to the received gating signal to select a target laser;
[0009] A triggering module, with the first end of the triggering module connected to the third end of the second switching module, and is used to control the on / off of the second switching module according to the received trigger pulse signal to trigger the target laser to emit a laser beam.
[0010] In one embodiment of the present disclosure, the site selection driving module includes:
[0011] A boost unit, the first end of the boost unit is connected to a second power supply, and the second end of the boost unit serves as the first end of the site selection driving module;
[0012] A driving unit, the first end of the driving unit serves as the second end of the site selection driving module, and the second end of the driving unit is connected to the second end of the boost unit.
[0013] In one embodiment of the present disclosure, the boost unit includes:
[0014] A unidirectional conduction device, the anode of the unidirectional conduction device serves as the first end of the boost unit, and the cathode of the unidirectional conduction device serves as the second end of the boost unit.
[0015] In one embodiment of the present disclosure, the boost unit further includes:
[0016] A first resistor, the first end of the first resistor is connected to the cathode of the unidirectional conduction device, and the second end of the first resistor serves as the second end of the boost unit.
[0017] In one embodiment of the present disclosure, the boost unit further includes:
[0018] A second resistor, the first end of the second resistor is connected to the cathode of the unidirectional conduction device and then serves as the second end of the boost unit, and the second end of the second resistor is grounded.
[0019] In one embodiment of the present disclosure, the driving unit includes:
[0020] A third resistor, the first end of the third resistor serves as the first end of the driving unit;
[0021] A switching device, the first end of the switching device serves as the second end of the driving unit, the second end of the switching device is grounded, and the third end of the switching device is connected to the second end of the third resistor.
[0022] In one embodiment of the present disclosure, the first switch module includes:
[0023] A first NMOS (N-Metal-Oxide-Semiconductor) transistor, the drain of the first NMOS transistor serves as the first end of the first switch module, the source of the first NMOS transistor serves as the second end of the first switch module, and the gate of the first NMOS transistor serves as the third end of the first switch module.
[0024] In one embodiment of the present disclosure, the second switch module includes:
[0025] A GaN MOS (Gallium Nitride Metal-Oxide-Semiconductor) transistor, where the drain of the GaN MOS transistor serves as the first end of the second switch module, the source of the GaN MOS transistor serves as the second end of the second switch module, and the gate of the GaN MOS transistor serves as the third end of the second switch module.
[0026] In one embodiment of the present disclosure, the switching device is a second NMOS transistor, where the drain of the second NMOS transistor serves as the first end of the switching device, the source of the second NMOS transistor serves as the second end of the switching device, and the gate of the second NMOS transistor serves as the third end of the switching device.
[0027] In one embodiment of the present disclosure, the laser includes: an inductor, a fourth resistor, a fifth resistor, a sixth resistor, a first capacitor, a second capacitor, and a light-emitting diode; where
[0028] The first end of the inductor is connected to the anode of the light-emitting diode and then serves as the anode of the laser. The second end of the inductor is connected to the first end of the fourth resistor. The second end of the fourth resistor is respectively connected to the first end of the first capacitor and the first end of the fifth resistor. The second end of the fifth resistor is respectively connected to the first end of the second capacitor and the first end of the sixth resistor. The second ends of the first capacitor, the second capacitor, the sixth resistor, and the cathode of the light-emitting diode are connected and then serve as the cathode of the laser.
[0029] In one embodiment of the present disclosure, the drive circuit further includes: at least one energy storage module; where
[0030] The at least one energy storage module includes one energy storage module. The first end of the energy storage module is connected to the first power supply, and the second end of the energy storage module is connected to the anodes of multiple lasers;
[0031] The at least one energy storage module includes multiple energy storage modules. The first ends of the multiple energy storage modules are connected to the first power supply, and the second end of each energy storage module is connected to the anode of the corresponding laser.
[0032] In one embodiment of the present disclosure, the energy storage module includes: a seventh resistor and a third capacitor; where
[0033] The first end of the seventh resistor serves as the first end of the energy storage module. The second end of the seventh resistor is connected to the first end of the third capacitor and then serves as the second end of the energy storage module. The second end of the third capacitor is grounded.
[0034] In an embodiment of the present disclosure, the third capacitor is a silicon-based energy storage capacitor.
[0035] An embodiment of the second aspect of the present disclosure provides a laser array, including the driving circuit of the laser array proposed in the embodiment of the first aspect.
[0036] The technical solutions provided by the embodiments of the present disclosure at least bring the following beneficial effects:
[0037] Through the embodiments of the present disclosure, the anodes of multiple lasers in the laser array are connected to the first power supply. The driving circuit of the laser array includes: multiple first switch modules, a second switch module, multiple addressing driving modules, and a triggering module. Among them, the first end of each first switch module is connected to the cathode of the corresponding laser, the first end of the second switch module is connected to the second end of the corresponding first switch module, the second end of the second switch module is grounded, the first end of each addressing driving module is connected to the third end of the corresponding first switch module, and the addressing driving module is used to control the on / off of the first switch module according to the received gating signal to select the target laser. The first end of the triggering module is connected to the third end of the second switch module and is used to control the on / off of the second switch module according to the received trigger pulse signal to trigger the target laser to emit a laser beam. Thus, the driving circuit of the laser array in the present disclosure reduces the power consumption and cost of the driving circuit of the common-anode laser array by sharing a high-performance second switch module.
[0038] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] The accompanying drawings herein are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure and do not constitute an improper limitation to the present disclosure.
[0040] Figure 1 is a block diagram of the driving circuit of the laser array according to an embodiment of the present disclosure;
[0041] Figure 2 is a circuit diagram of the driving circuit of the laser array according to an embodiment of the present disclosure;
[0042] Figure 3 is an application scenario diagram of the driving circuit of the laser array according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0043] To enable those of ordinary skill in the art to better understand the technical solutions of the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings.
[0044] It should be noted that the terms "first", "second", etc. in the specification and claims of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present disclosure described here can be implemented in an order other than those illustrated or described here. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.
[0045] The laser array and its driving circuit according to the embodiments of the present disclosure will be described below with reference to the drawings.
[0046] Currently, the driving circuits of the laser arrays put into use are mostly built with discrete components. For example, there are the following two types:
[0047] First, a high-side PMOS (P-Metal-Oxide-Semiconductor) switch array. Since the turn-on voltage of the laser array is relatively high, PMOS transistors with relatively high prices and low voltage controlling high voltage are usually used as switching devices. However, the cost of multiple (usually dozens of) PMOS transistors is nearly twice as high as that of NMOS transistors. Moreover, due to the manufacturing process of PMOS transistors, the on-resistance itself is nearly 10 times larger than that of NMOS transistors. This will result in a high cost and large power consumption of the multi-channel driving circuit.
[0048] Second, a low-side GaN MOS switch array. In summary, the driving circuit of the laser array has extremely high performance requirements for the switching speed and power consumption of the low-side MOS transistors. The common-anode low-side distributed GaN MOS switch array topology means excellent performance requirements also mean high costs.
[0049] Therefore, the present disclosure proposes a driving circuit for a laser array, which reduces the power consumption and cost of the driving circuit of the common-anode laser array by sharing a high-performance second switching module.
[0050] Figure 1 is a block schematic diagram of the driving circuit of the laser array according to the embodiments of the present disclosure.
[0051] It should be noted that in the embodiments of the present disclosure, the anodes of multiple lasers 10 in the laser array are connected to the first power supply 20.
[0052] As Figure 1 shown, the drive circuit of the laser array according to the embodiments of the present disclosure includes: a plurality of first switch modules 30, a second switch module 50, a plurality of address selection drive modules 40, and a trigger module 60.
[0053] Among them, the first end of each first switch module 30 is connected to the cathode of the corresponding laser 10. The first end of the second switch module 50 is connected to the second end of the corresponding first switch module 30, and the second end of the second switch module 50 is grounded. The first end of each address selection drive module 40 is connected to the third end of the corresponding first switch module 30. The address selection drive module 40 is configured to control the on / off of the first switch module 30 according to the received gating signal to select a target laser. The first end of the trigger module 60 is connected to the third end of the second switch module 50, and is configured to control the on / off of the second switch module 50 according to the received trigger pulse signal to trigger the target laser 10 to emit a laser beam.
[0054] In the present disclosure, a gating signal and a trigger pulse signal are respectively sent by a controller such as an MCU (Microprogrammed Control Unit, microcontroller) or an FPGA (Field Programmable Gate Array, field programmable gate array). When the address selection drive module 40 receives the gating signal, it controls the on / off of the first switch module 30 to select a target laser from the laser array. At the same time, when the trigger module 60 receives the trigger pulse signal, it controls the on / off of the second switch module 50 to trigger the target laser to emit a laser beam. The drive circuit of the laser array of the present disclosure reduces the power consumption and cost of the drive circuit of the laser array with a common anode by sharing a high-performance second switch module.
[0055] To enable those skilled in the art to more clearly understand the drive circuit of the laser array of the present disclosure. The following combines Figure 2 to illustrate the drive circuit of the laser array according to the embodiments of the present disclosure.
[0056] As Figure 2 shown, the address selection drive module 40 includes: a boosting unit 41 and a driving unit 42. Among them, the first end of the boosting unit 41 is connected to the second power supply 43, and the second end of the boosting unit 41 serves as the first end of the address selection drive module 40. The first end of the driving unit 42 serves as the second end of the address selection drive module 40, and the second end of the driving unit 42 is connected to the second end of the boosting unit 41.
[0057] As Figure 2As shown, the boost unit 41 includes: a unidirectional conduction device 411. The anode of the unidirectional conduction device 411 serves as the first end of the boost unit 41, and the cathode of the unidirectional conduction device 411 serves as the second end of the boost unit 41. Among them, the unidirectional conduction device 411 can be a diode D1, as Figure 2 shown; the unidirectional conduction device 411 can also be a triode. The base of the triode serves as the first end of the boost unit 41, the emitter of the triode serves as the second end of the boost unit 41, and the collector of the triode is grounded. Or, the base of the triode serves as the first end of the boost unit 41, the emitter of the triode is connected to a 5V power supply, and the collector of the triode serves as the second end of the boost unit 41. The unidirectional conduction device 411 can also be other types of switching devices with unidirectional conduction functions, and specific examples are not given here.
[0058] As Figure 2 shown, the boost unit 41 further includes: a first resistor R1. The first end of the first resistor R1 is connected to the cathode of the unidirectional conduction device 411, and the second end of the first resistor R1 serves as the second end of the boost unit 41.
[0059] As Figure 2 shown, the boost unit 41 further includes: a second resistor R2. The first end of the second resistor R2 is connected to the cathode of the unidirectional conduction device 411 and then serves as the second end of the boost unit 41, and the second end of the second resistor R2 is grounded.
[0060] As Figure 2 shown, the drive unit 42 includes: a third resistor R3 and a switching device 422. Among them, the first end of the third resistor R3 serves as the first end of the drive unit 42. The first end of the switching device 422 serves as the second end of the drive unit 42, the second end of the switching device 422 is grounded, and the third end of the switching device 422 is connected to the second end of the third resistor R3.
[0061] As Figure 2 shown, the first switch module 30 includes: a first NMOS transistor Q1. The drain of the first NMOS transistor Q1 serves as the first end of the first switch module 30, the source of the first NMOS transistor Q1 serves as the second end of the first switch module 30, and the gate of the first NMOS transistor Q1 serves as the third end of the first switch module 30.
[0062] As Figure 2 shown, the switching device 422 is a second NMOS transistor Q3. The drain of the second NMOS transistor Q3 serves as the first end of the switching device 422, the source of the second NMOS transistor Q3 serves as the second end of the switching device 422, and the gate of the second NMOS transistor Q3 serves as the third end of the switching device 422.
[0063] It should be noted that in other embodiments of the present disclosure, the switching device 422 can also be other types of switching devices. The first NMOS transistor Q1 and the switching device 422 can also be combined, that is, a switch integrating the first NMOS transistor Q1 and the switching device 422 is used. In this way, the peripheral devices of the driving circuit of the laser array will be reduced, the volume occupied by the circuit board will be smaller, and it is easier to achieve miniaturization.
[0064] As Figure 2 shown, the second switching module 50 includes: a GaN MOS transistor Q2. The drain of the GaN MOS transistor Q2 serves as the first end of the second switching module 50. The source of the GaN MOS transistor Q2 is connected to the first end of the eighth resistor R8. The second end of the eighth resistor R8 serves as the second end of the second switching module 50. The gate of the GaN MOS transistor Q2 serves as the third end of the second switching module 50.
[0065] In the present disclosure, the switching device 422 preferably uses an NMOS transistor because the NMOS transistor is much more optimized in terms of power consumption and cost compared to the PMOS transistor. If the switching device 422 uses an NMOS transistor, then it is necessary to solve the problem of the dynamic increase in the gate-source conduction voltage of the NMOS transistor caused by the superposition of the on-state voltage drop of the GaN MOS transistor Q2 itself and the voltage drop of the eighth resistor R8. For this reason, the driving circuit of the present disclosure uses a dynamic boost method, that is, as Figure 2 shown, a special boost unit 41. Generally, in an NMOS transistor, the source-gate parasitic capacitance Cgs will have an adverse impact on the switching circuit, such as the switching speed. However, in the present disclosure, by utilizing the characteristics of the source-gate parasitic capacitance Cgs and the situation where the first NMOS transistor Q1 does not require high-speed switching, and using the single-phase conduction characteristic of the diode D1 and Cgs (source-gate parasitic capacitance), a special boost unit 41 is formed. When the second NMOS transistor Q3 is turned off, the pulse trigger signal VC1 is shaped by the trigger module 60 to drive the GaN MOS transistor Q2. When the trigger pulse signal generated by the trigger module 60 is at a high level instantaneously, the GaN MOS transistor Q2 conducts, and the superposition voltage generated by the eighth resistor R8 and the on-state voltage of the GaN MOS transistor at the source of the first NMOS transistor Q1 is denoted as V j1 . When the trigger pulse signal generated by the trigger module 60 is at the next trigger high level instantaneously, the on-condition V GS of the first NMOS transistor Q1 conducting is V GSon and V j1The sum. In the present disclosure, by utilizing the property that the voltage across the source-gate parasitic capacitance Cgs of the source gate cannot change suddenly, and the unidirectional conduction characteristic of the diode D1, when the secondary trigger pulse signal arrives at the GaNMOS transistor Q2, due to the fact that the voltage across the source-gate parasitic capacitance Cgs of the first NMOS transistor Q1 cannot change suddenly, the second power supply 43 injects charge into the parasitic capacitance Cgs of the first NMOS transistor Q1 through the diode D1 and the first resistor R1, so that the voltage at the gate of the first NMOS transistor Q1 (i.e., the V GSon ) follows V j1 and realizes step-up automatically.
[0066] In the first switching module 30 of the driving circuit of the laser array of the present disclosure, by using NMOS transistors and utilizing the source-gate parasitic capacitance Cgs of the NMOS as the energy storage capacitor of the step-up unit 41, in cooperation with a low-cost diode or unidirectional conduction device 41, step-up is realized.
[0067] Therefore, the topology of the driving circuit of the present disclosure is easy to realize multi-channel integration on a single silicon chip, and the number of required devices is low, and the process complexity requirement for PMOS transistors is also lower; if the application scenario is a two-dimensional addressable VCSEL driving discrete circuit, there is no need to use PMOS transistors. The NMOS high-side driving scheme utilizes the source-gate parasitic capacitance Cgs of the NMOS to reduce the number of circuit components, reduce the cost of designing switching devices and the overall power consumption of the circuit.
[0068] As Figure 2 shown, each channel of the laser 10 can include: an inductor L, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a first capacitor C1, a second capacitor C2, and a light-emitting diode D2. Among them, the first end of the inductor L and the anode of the light-emitting diode D2 are connected and used as the anode of the laser 10. The second end of the inductor L is connected to the first end of the fourth resistor R4. The second end of the fourth resistor R4 is respectively connected to the first end of the first capacitor C1 and the first end of the fifth resistor R5. The second end of the fifth resistor R5 is respectively connected to the first end of the second capacitor C2 and the first end of the sixth resistor R6. The second ends of the first capacitor C1, the second capacitor C2, the sixth resistor R6, and the cathode of the light-emitting diode D2 are connected and used as the cathode of the laser 10.
[0069] As Figure 2 shown, the driving circuit further includes: at least one energy storage module 70; among them,
[0070] At least one energy storage module 70 includes one energy storage module 70. The first end of the energy storage module 70 is connected to the first power supply 20, and the second end of the energy storage module 70 is connected to the anodes of multiple lasers 10;
[0071] At least one energy storage module 70 includes a plurality of energy storage modules 70. The first ends of the plurality of energy storage modules 70 are connected to the first power supply 20, and the second ends of each energy storage module 70 are connected to the anodes of the corresponding lasers 10.
[0072] As Figure 2 shown, the energy storage module 70 includes: a seventh resistor R7 and a third capacitor C3. Among them, the first end of the seventh resistor R7 serves as the first end of the energy storage module 70, the second end of the seventh resistor R7 is connected to the first end of the third capacitor C3 and then serves as the second end of the energy storage module 70, and the second end of the third capacitor C3 is grounded.
[0073] Among them, the third capacitor C3 is a silicon-based energy storage capacitor.
[0074] In the present disclosure, it is preferred to connect the anode of the laser 10 to the energy storage module 70 together, but it is not limited to the anodes of the lasers in each channel being separately connected to a separately provided energy storage module 70. In the present disclosure, the third capacitor C3 uses a silicon-based energy storage capacitor because the silicon-based energy storage capacitor has the characteristics of stable capacitance value, small error, high precision, and small temperature drift coefficient, and has advantages such as high consistency of each laser channel of the laser array and stable emission power. However, in the present disclosure, it is not limited to discrete circuits, and the third capacitor C3 can also use common ceramic capacitors.
[0075] As Figure 2 shown, the first power supply 20 includes: a first battery pack S1 and an energy storage capacitor C4; among them, the positive electrode of the first battery pack S1 is connected to the first end of the energy storage capacitor C4 and then serves as the input end of the energy storage module 70, and the negative electrode of the first battery pack S1 is connected to the second end of the energy storage capacitor C4 and then grounded.
[0076] As Figure 2 shown, the second power supply 43 includes: a second battery pack S2 and an energy storage capacitor C5; among them, the positive electrode of the second battery pack S2 is connected to the first end of the energy storage capacitor C5 and then serves as the input end of the boost unit 41, and the negative electrode of the second battery pack S2 is connected to the second end of the energy storage capacitor C5 and then grounded.
[0077] As Figure 2 shown, the trigger module 60 includes a third power supply 61 and a trigger 62. Among them, the power supply terminal VDD of the trigger 62 is connected to the third power supply 61, the ground terminal of the trigger 62 is grounded, the signal receiving end of the trigger 62 is used to receive a trigger pulse signal, the high-level output terminal OUTH of the trigger 62 is connected to the gate of the GaN MOS transistor Q2 through a ninth resistor R9, the low-level output terminal OUTT of the trigger 62 is also connected to the gate of the GaN MOS transistor Q2 through a tenth resistor R10, and the INM terminal of the trigger 62 is grounded.
[0078] Figure 3It is an application scenario diagram of a driving circuit for a laser array according to an embodiment of the present disclosure. As Figure 3 shown, the lidar of the present disclosure includes: a controller, a driving circuit, a VCSEL array, and a SPAD array. The controller issues a pulse driving signal and a gating signal to drive a target laser in the VCSEL array to emit a laser beam through the driving circuit. After the laser beam irradiates the target object, the reflected light beam will be fed back to the SPAD array, and then to the controller, so that the controller can complete the detection of the target object. For example, face recognition, object capacity detection, etc.
[0079] In summary, the anodes of multiple lasers in the laser array of the present disclosure are connected to the first power supply. The driving circuit of the laser array includes: multiple first switch modules, a second switch module, multiple addressing and driving modules, and a triggering module. Wherein, the first end of each first switch module is connected to the cathode of the corresponding laser, the first end of the second switch module is connected to the second end of the corresponding first switch module, the second end of the second switch module is grounded, the first end of each addressing and driving module is connected to the third end of the corresponding first switch module, and the addressing and driving module is used to control the on / off of the first switch module according to the received gating signal to select the target laser. The first end of the triggering module is connected to the third end of the second switch module, and is used to control the on / off of the second switch module according to the received trigger pulse signal to trigger the target laser to emit a laser beam. Thus, the driving circuit of the laser array of the present disclosure reduces the power consumption and cost of the common-anode laser array by sharing a high-performance second switch module.
[0080] Based on the above embodiments, the present disclosure also proposes a laser array.
[0081] The laser array of the present disclosure includes the driving circuit of the above-mentioned laser array.
[0082] It should be noted that for the details not disclosed in the laser array of the embodiments of the present disclosure, please refer to the details described in the driving circuit of the laser array of the embodiments of the present disclosure, which will not be elaborated here specifically.
[0083] The laser array of the embodiments of the present disclosure reduces the power consumption and cost of the common-anode laser array by sharing a high-performance second switch module through the above-mentioned driving circuit of the laser array.
[0084] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.
[0085] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically and clearly defined.
Claims
1. A driving circuit for a laser array, characterized in that, The anodes of multiple lasers in the laser array are connected to a first power supply. The drive circuit includes: Multiple first switch modules, with the first end of each first switch module connected to the cathode of the corresponding laser; A second switch module, with the first end of the second switch module connected to the second end of the corresponding first switch module, and the second end of the second switch module grounded; Multiple address selection drive modules, with the first end of each address selection drive module connected to the third end of the corresponding first switch module. The address selection drive module is used to control the on / off of the first switch module according to the received gating signal to select a target laser; A trigger module, with the first end of the trigger module connected to the third end of the second switch module, and is used to control the on / off of the second switch module according to the received trigger pulse signal to trigger the target laser to emit a laser beam.
2. The driving circuit for a laser array according to claim 1, characterized in that, The address selection drive module includes: A boost unit, with the first end of the boost unit connected to a second power supply, and the second end of the boost unit serving as the first end of the address selection drive module; A drive unit, with the first end of the drive unit serving as the second end of the address selection drive module, and the second end of the drive unit connected to the second end of the boost unit.
3. The driving circuit for a laser array according to claim 2, characterized in that, The boost unit includes: A unidirectional conduction device, with the anode of the unidirectional conduction device serving as the first end of the boost unit, and the cathode of the unidirectional conduction device serving as the second end of the boost unit.
4. The driving circuit for a laser array according to claim 3, characterized in that, The boost unit further includes: A first resistor, with the first end of the first resistor connected to the cathode of the unidirectional conduction device, and the second end of the first resistor serving as the second end of the boost unit.
5. The driving circuit for a laser array according to claim 3, characterized in that, The boost unit further includes: A second resistor, with the first end of the second resistor connected to the cathode of the unidirectional conduction device and then serving as the second end of the boost unit, and the second end of the second resistor grounded.
6. The driving circuit for a laser array according to claim 2, characterized in that, The drive unit includes: A third resistor, with the first end of the third resistor serving as the first end of the drive unit; A switching device, with the first end of the switching device serving as the second end of the drive unit, the second end of the switching device grounded, and the third end of the switching device connected to the second end of the third resistor.
7. The driving circuit for a laser array according to claim 1, characterized in that, The first switch module includes: A first NMOS transistor, with the drain of the first NMOS transistor serving as the first end of the first switch module, the source of the first NMOS transistor serving as the second end of the first switch module, and the gate of the first NMOS transistor serving as the third end of the first switch module.
8. The driving circuit for a laser array according to claim 1, characterized in that, The second switch module includes: A GaN MOS transistor, with the drain of the GaN MOS transistor serving as the first end of the second switch module, the source of the GaN MOS transistor serving as the second end of the second switch module, and the gate of the GaN MOS transistor serving as the third end of the second switch module.
9. The driving circuit for a laser array according to claim 6, characterized in that, The switching device is a second NMOS transistor, with the drain of the second NMOS transistor serving as the first end of the switching device, the source of the second NMOS transistor serving as the second end of the switching device, and the gate of the second NMOS transistor serving as the third end of the switching device.
10. The driving circuit for a laser array according to claim 1, characterized in that, The laser includes: an inductor, a fourth resistor, a fifth resistor, a sixth resistor, a first capacitor, a second capacitor, and a light-emitting diode; wherein, The first end of the inductor and the anode of the light-emitting diode are connected and used as the anode of the laser. The second end of the inductor is connected to the first end of the fourth resistor. The second end of the fourth resistor is respectively connected to the first end of the first capacitor and the first end of the fifth resistor. The second end of the fifth resistor is respectively connected to the first end of the second capacitor and the first end of the sixth resistor. The second end of the first capacitor, the second end of the second capacitor, the second end of the sixth resistor, and the cathode of the light-emitting diode are connected and used as the cathode of the laser.
11. The driving circuit for a laser array according to claim 1, characterized in that, The drive circuit further includes: at least one energy storage module; wherein, The at least one energy storage module includes one such energy storage module. The first end of the energy storage module is connected to the first power supply, and the second end of the energy storage module is connected to the anodes of multiple lasers; The at least one energy storage module includes multiple such energy storage modules. The first ends of the multiple energy storage modules are connected to the first power supply, and the second end of each energy storage module is connected to the anode of the corresponding laser.
12. The drive circuit of the laser array according to claim 11, wherein, The energy storage module includes: a seventh resistor and a third capacitor; wherein, The first end of the seventh resistor is used as the first end of the energy storage module. The second end of the seventh resistor is connected to the first end of the third capacitor and used as the second end of the energy storage module. The second end of the third capacitor is grounded.
13. The drive circuit of the laser array according to claim 12, wherein, The third capacitor is a silicon-based energy storage capacitor.
14. A laser array, wherein, A drive circuit including a laser array according to any one of claims 1-13.