High-sensitivity and high-pressure-resistant sensor manufacturing process and sensor

Abstract

According to the manufacturing process of the high-sensitivity and high-pressure-resistant sensor, a silicon island film structure is arranged at a back cavity of the pressure sensor, so that all pressure sensitive elements are located at positions with relatively large stress, and the sensitivity of the sensor is improved; meanwhile, the hollow structure is manufactured on the silicon island film structure, when high-speed gas impacts the hollow structure, the impact force of the gas is buffered based on the micro-deformation of the hollow structure, but the gas cannot be influenced to penetrate through the hollow layer, the pressure sensing film layer of the pressure sensor is effectively protected, the service life of the pressure sensor is prolonged, and the service life of the pressure sensor is prolonged. And the silicon island film structure can bear higher pressure. Through cooperative use of the silicon island film structure and the hollow structure, the sensitivity and the pressure resistance degree of the pressure sensor are improved based on relatively low cost, and it is ensured that the sensor can be suitable for a high-pressure environment.

Description

Technical Field

[0001] The present invention relates to the technical field of sensors, and specifically to a manufacturing process and a sensor for a highly sensitive and high-voltage-resistant sensor. Background Art

[0002] After decades of development, MEMS pressure sensors have been widely used in various fields such as automotive electronics, consumer electronics, healthcare, industry, agriculture, and aerospace. According to the working principle of pressure sensors, MEMS pressure sensors can be divided into piezoresistive, piezoelectric, capacitive, resonant, surface acoustic wave, and fiber optic types. Among them, silicon piezoresistive pressure sensors are the most commercially available and widely used MEMS pressure sensors. Silicon piezoresistive pressure sensors are made using the piezoresistive effect of single-crystalline silicon. Four equivalent semiconductor resistors are diffused in a specific direction on the silicon diaphragm and connected into a Wheatstone bridge, serving as the sensitive element of the force-electricity transducer. When the diaphragm is subjected to an external pressure and the bridge is unbalanced, if an excitation power supply (constant current and constant voltage) is applied to the bridge, an output voltage proportional to the measured pressure can be obtained, thereby achieving the purpose of measuring pressure. In the prior art, in order to improve the sensitivity of the pressure sensor, technicians usually improve the sensitivity of the sensor by reducing the thickness of the sensitive film layer.

[0003] However, in some industrial and aerospace fields, in some application scenarios, it is necessary to perform flow tests on a large flow of gas. For example, in the exhaust gas detection in large-scale industrial production, a large flow of gas impacts the pressure sensor at high speed, and the pressure sensor is subjected to a pressure higher than 10 MPa. In this environment, the thinner sensitive film layer will cause the service life of the sensor to be shortened. And the cost of high-voltage-resistant pressure sensors made of special materials is very high. Summary of the Invention

[0004] In order to solve the problem that the high-voltage-resistant pressure sensors in the prior art cannot balance the cost and service life, the present invention provides a manufacturing process for a highly sensitive and high-voltage-resistant sensor, which can improve the sensitivity and voltage resistance of the pressure sensor based on a relatively low cost. At the same time, the present application also discloses a highly sensitive and high-voltage-resistant sensor.

[0005] The technical solution of the present invention is as follows: A manufacturing process for a highly sensitive and high-voltage-resistant sensor, which includes the following steps: S1: Prepare an SOI silicon wafer; The SOI silicon wafer includes: a second layer of silicon (4), a second isolation layer (3), a first layer of silicon (1), and a first silicon dioxide isolation layer (2) from top to bottom; S2: Inject P+ and P- ions to form a piezoresistive sensitive element; Boron ions are implanted into the second silicon layer (4) to form a P-doped layer using light doping, constituting a sensitive resistor element (5); Then, boron ions are selected for implantation in the second silicon layer (4), and a P+-doped layer (6) is formed using heavy doping to form an ohmic contact electrical connection; The heavily doped P-doped layer (6) connects several sensitive resistor elements (5) together and forms a Wheatstone bridge together with the metal; S3: Grow an oxide layer and etch a via hole; Grow an oxide layer (7) on the second silicon layer (4), and then perform dry etching on the oxide layer (7) to form a via hole (8); S4: Metal sputtering and patterning; A metal (9) is sputtered on the surfaces of the via hole (8) and the oxide layer (7) by magnetron sputtering to form metal interconnections between the varistors and bonding pads; It is characterized in that it further includes the following steps: S5: Dry-etch the first insulating layer (2) on the back of the silicon wafer, and the etching stop layer is the silicon-based substrate (1). After etching a corrosion window on the first insulating layer (2), a mask layer (10) for etching the silicon island film structure is formed; S6: Etch the silicon wafer with a KOH solution to form a silicon island film structure (11) on the silicon-based substrate (1) based on the mask layer (10); S7: Form a first-layer hollow structure (13) on the silicon island film structure (11); S8: Form a second-layer hollow structure (14) on the first-layer hollow structure to obtain a hollow silicon island structure.

[0006] It is further characterized in that: In step S7, it specifically includes the following steps: a1: Perform CMP mechanical polishing to thin the silicon island film structure (11); a2: Coat a photoresist (12) with a regularly spaced structure on the surface of the silicon island film structure (11) using a photomask; a3: Based on the surface of the silicon island film structure (11), magnetron sputter-deposit a platinum metal layer, and then strip the photoresist (12) using the lift-off process to form a vertical structure of the platinum metal layer, obtaining the first-layer hollow structure (13); In step S8, it specifically includes the following steps: b1: Deposit a layer of metal aluminum on the first-layer hollow structure (13) by magnetron sputtering technology; b2: Spin-coat a photoresist on the surface of the metal aluminum, and use a mask plate to develop the photoresist for horizontal protection; b3: Etching aluminum metal using an acidic wet etching solution; b4: Removing the protective photoresist to form a fence-like strip structure perpendicular to the first-layer hollow structure, obtaining the second-layer hollow structure (14); In step S6, it specifically includes the following steps: c1: Applying photoresist for protection at the position of the silicon island film structure preset on the silicon-based substrate (1); c2: Coarsely etching silicon using a KOH solution to etch left and right double windows on the first-layer silicon (1) serving as the base substrate; The photoresist protection area forms a boss structure; c3: Removing the photoresist protection film; c4: Using a KOH solution for fine etching to synchronously etch the windows and the boss, etching the window position until reaching the second-layer isolation layer (3), generating the silicon island film structure (11).

[0007] A high-sensitivity and high-voltage-resistant sensor, which includes: a second-layer silicon (4), a second-layer isolation layer (3), and a first-layer silicon (1) arranged from top to bottom, and is characterized in that: A cavity reaching the second-layer isolation layer (3) is provided in the first-layer silicon (1), and a silicon island film structure (11) is provided on the lower surface of the cavity at the second-layer isolation layer (3); A hollow structure is provided on the lower surface of the silicon island film structure (11); The hollow structure includes: two layers of hollow structures arranged from top to bottom.

[0008] It is further characterized in that: The first-layer hollow structure is a fence-like strip structure; The second-layer hollow structure is a fence-like strip structure, and the strip structure in the second-layer hollow structure is not parallel to the strip structure in the first-layer hollow structure; A sensitive resistor element (5) and a P+ doping layer (6) are provided in the second-layer silicon (4), and the P+ doping layer (6) connects several sensitive resistor elements (5) together and forms a Wheatstone bridge together with the metal; An oxide layer (7) is provided on the upper surface of the second-layer silicon (4), a through hole (8) is provided in the oxide layer (7), the metal (9) fills the through hole (8) to connect the P+ doping layer (6), and the metal (9) forms a bonding pad on the surface of the oxide layer (7).

[0009] A manufacturing process for a highly sensitive and high-voltage-resistant sensor, which sets a silicon island film structure at the back cavity of the pressure sensor, so that the pressure-sensitive elements are all located at positions with greater stress, improving the sensitivity of the sensor; at the same time, a hollow structure is made on the silicon island film structure. When high-speed gas impacts this hollow structure, the impact force of the gas is buffered based on the micro-deformation of the hollow structure, but it does not affect the gas passing through the hollow layer, effectively protecting the pressure-sensitive film layer of the pressure sensor, increasing the service life of the pressure sensor, and ensuring that the silicon island film structure can withstand more pressure. Through the combined use of the silicon island film structure and the hollow structure, the sensitivity and voltage resistance of the pressure sensor are improved based on a relatively low cost, ensuring that the sensor can be applied to a high-pressure environment. Description of the Drawings

[0010] Figure 1 It is the initial part of the manufacturing process flow of the highly sensitive and high-voltage-resistant sensor; Figure 2 It is the manufacturing process flow of the silicon island film structure of the highly sensitive and high-voltage-resistant sensor; Figure 3 It is the manufacturing process flow of the hollow structure of the highly sensitive and high-voltage-resistant sensor; Figure 4 It is an example of the board diagram of the silicon island film structure with a hollow structure in this application. Detailed Description of the Invention

[0011] As Figures 1 to 4 shown, this application includes a manufacturing process for a highly sensitive and high-voltage-resistant sensor, which includes the following steps.

[0012] S1: Prepare an SOI silicon wafer.

[0013] Inject oxygen ions with a high dose (0.3 - 1.8e18 cm-2) into the silicon wafer through high energy (120 - 200 keV). The oxygen ions injected with high energy will be distributed below the surface of the silicon wafer; then, through a high-temperature (900 - 1500 °C) annealing for 3 - 6 hours, the oxygen ions in the silicon wafer react with silicon to form a layer of silicon dioxide insulating layer material with a thickness of about 300 - 500 nm below the surface of the silicon wafer. Thus, the first layer of silicon (1) and the second isolation layer (3) with a thickness of 300 - 600 nm on its upper surface, and the second layer of silicon (4) on the upper surface of the second isolation layer are formed. Thereafter, a first layer of silicon dioxide isolation layer (2) with a thickness of about 0.3 - 0.5 μm is generated on the lower surface of the first layer of silicon. The above multiple layers constitute the SOI silicon wafer. The finally formed SOI silicon wafer includes: from top to bottom, the second layer of silicon (4), the second isolation layer (3), the first layer of silicon (1), and the first layer of silicon dioxide isolation layer (2), as Figure 1 shown in a of

[0014] S2: P+ and P- ions are implanted to form piezoresistive sensitive elements.

[0015] On the second silicon layer (4), boron ions with an energy of 80 keV and a dose of 5×10e15 cm-2 are implanted for light doping to form a P-doped layer, thus forming a sensitive resistor element (5); then, boron ions with an implantation energy of 200 keV and a dose of 1.57×10e14 cm-2 are selected and implanted on the second silicon layer (4) for heavy doping to form a P+ doped layer (6) for ohmic contact electrical connection. The process schematic diagram is as shown in Figure 1 b in the figure, and the layout is as shown in Figure 1 b' in the figure. The heavy doping structure connects several piezoresistors together and forms a Wheatstone bridge together with the metal. To reduce the resistance error in the circuit, the resistance value of the internal interconnection structure should be as small as possible. In addition, to ensure ohmic contact with the metal, the doping concentration of the internal interconnection structure needs to be high enough to reduce the width of the Schottky barrier between the metal and the silicon. The silicon wafer needs to be annealed at a high temperature of 1050 °C for 90 minutes. After high-temperature annealing, the lattice damage of the silicon wafer is repaired, and the doped ions rediffuse and are activated, forming N-type and P-type regions that meet the design requirements in the silicon wafer.

[0016] S3: Grow an oxide layer and etch vias.

[0017] On the second silicon layer (4), a 50-nm-thick oxide layer (7) is grown, and then the oxide layer (7) is dry-etched to form vias (8). The process schematic diagram is as shown in Figure 1 c in the figure, and the layout is as shown in Figure 1 c' in the figure.

[0018] S4: Metal sputtering and patterning; By using magnetron sputtering, a 1 - 1.5-μm-thick metal (9) is sputtered on the surfaces of the vias (8) and the oxide layer (7). The sputtered metal is used both to form the metal interconnection between the piezoresistors and the bonding pads and as a sealing material to seal the vias. The thickness of the sputtered metal is higher than the thickness of the vias to ensure that the vias can be filled completely. The process schematic diagram is as shown in Figure 1 d in the figure, and the layout is as shown in Figure 1 d' in the figure.

[0019] S5: Dry-etch the first insulating layer (2) on the back of the silicon wafer, and the etching stop layer is the silicon-based substrate (1), forming a mask layer (10) for etching the silicon island film structure. In this step, the first insulating layer (2) is etched to form a mask layer (10) for etching the silicon island film structure. The process schematic diagram is as shown in Figure 2 e in the figure, and the layout is as shown in Figure 2 e' in the figure.

[0020] S6: Corrode the silicon wafer with a KOH solution to form a silicon island film structure (11) on the silicon-based substrate (1) based on the mask layer (10).

[0021] In order to shorten the corrosion time and precisely control the thickness of the pressure-sensitive diaphragm, a two-step corrosion method is adopted to generate the silicon island film structure in this method. The first step is rough corrosion, and the specific steps are as follows: c1: Apply photoresist for protection at the position of the silicon island film structure on the silicon-based substrate (1); c2: Conduct rough corrosion with a 25% KOH solution in a water bath at 80°C to etch left and right double windows on the first-layer silicon (1) serving as the base substrate; the photoresist-protected area forms a boss structure. During the corrosion process, measure the corrosion depth with a step gauge every hour, and increase the measurement frequency when approaching the target corrosion depth.

[0022] The first step is as Figure 2 shown in f, mainly rough-etch the left and right double windows on both sides of the silicon island film structure (11) on the silicon-based substrate, and conduct photoresist protection in the middle position to slow down the corrosion rate of the mass block structure. Finally, the corrosion depth of the left and right double windows is about 100 - 200 μm, and the corrosion depth of the middle mass block is about 20 - 50 μm. The position of the silicon island film structure (11) in the bottom cavity is as Figure 2 shown in f'.

[0023] The second step is fine corrosion, and the specific steps are as follows: c3: Remove the photoresist protection film; c4: Conduct fine corrosion with a 45% KOH solution in a water bath at 60°C. In this step, the windows and the boss are corroded synchronously until the window position is corroded to the second-layer isolation layer (3) to generate the silicon island film structure (11).

[0024] During the corrosion process, measure the corrosion depth with a step gauge every half hour. The corrosion rate of this step is relatively fast, saving time. The double windows and the middle boss structure are corroded synchronously, and the silicon oxide 3 is the cut-off layer until the silicon-based substrate of the double windows is corroded to the cut-off layer, and finally, as Figure 2 shown in g, the middle boss is retained to form a 10 - 30 μm mass block silicon island film structure (11). During the process, the corrosion depth of the left and right double windows and the middle silicon island mass block is about 200 - 350 μm.

[0025] S7: Form a first-layer hollow structure (13) on the silicon island film structure (11). The specific steps are as follows.

[0026] a1: Conduct CMP mechanical polishing to thin the silicon island film structure (11) to 3 - 10 μm; a2: Coating a layer of photoresist (12) with a regular spaced structure on the surface of the silicon island film structure (11) using a photomask plate; a3: Magnetron sputtering deposition is carried out on the surface of the silicon island film structure (11) to deposit a platinum metal layer with a thickness of 0.1 - 2 μm. Then, the photoresist (12) is peeled off using the lift-off process to form a vertical structure of the platinum metal layer, obtaining the first layer of hollow structure (13).

[0027] The specific mechanism is as shown in Figure 3 h, and the layout diagram is as shown in Figure 3 h'.

[0028] S8: Forming a second layer of hollow structure on the first layer of hollow structure to obtain a hollow silicon island structure.

[0029] In step S8, it specifically includes the following steps: b1: Magnetron sputtering deposition of 0.1 - 2 μm of aluminum metal on the upper surface of the first layer of hollow structure (13); b2: Spin-coating photoresist on the surface of the aluminum metal, and using a mask plate to develop the photoresist for horizontal protection; b3: Etching the aluminum metal using an acidic wet etching solution; b4: Removing the protective photoresist to form a fence-like strip structure perpendicular to the first layer of hollow structure (13), obtaining the second layer of hollow structure (14).

[0030] As shown in Figure 3 i, and the layout diagram of the second layer of hollow structure (14) is as shown in Figure 3 i'.

[0031] In actual use, according to actual needs, the hollow structure in this application can be laid at all the required pressure-bearing parts, such as: the lower surface of the second layer of isolation layer (3) on both sides of the silicon island film structure (11) in the cavity. The impact force of the buffer gas is deformed through the hollow structure, but it will not affect the gas passing through the hollow layer, effectively improving the pressure resistance of the sensor and the service life of the sensitive pressure film layer.

[0032] A highly sensitive and high-pressure-resistant sensor fabricated based on the above process includes: a second layer of silicon (4), a second layer of isolation layer (3), and a first layer of silicon (1) arranged from top to bottom.

[0033] A sensitive resistor element (5) and a P+ doped layer (6) are arranged in the second-layer silicon (4). The P+ doped layer (6) connects several sensitive resistor elements (5) together and forms a Wheatstone bridge together with the metal. An oxide layer (7) is arranged on the upper surface of the second-layer silicon (4), and a through hole (8) is arranged in the oxide layer (7). The metal (9) fills the through hole (8) to connect the P+ doped layer (6), and the metal (9) forms a bonding pad on the surface of the oxide layer (7). A cavity reaching the second-layer isolation layer (3) is arranged in the first-layer silicon (1), and a silicon island film structure (11) is arranged on the lower surface of the second-layer isolation layer (3) in the cavity; a hollow structure is arranged on the lower surface of the silicon island film structure (11); the hollow structure includes: two layers of hollow structures arranged from top to bottom.

[0034] The first-layer hollow structure (13) is a fence-like strip structure; the second-layer hollow structure (14) is a fence-like strip structure, and the strip structures in the second-layer hollow structure are not parallel to the strip structures in the first-layer hollow structure; various-shaped hollow structures can be formed through the included angle of the strip structures of the first-layer hollow structure (13) and the second-layer hollow structure (14).

[0035] In this embodiment, in order to simplify the process, the first-layer hollow structure (13) and the second-layer hollow structure (14) are perpendicular to each other, and the first-layer hollow structure (13) and the second-layer hollow structure (14) form a square hollow structure, as Figure 4 shown. The first-layer hollow structure (13) and the second-layer hollow structure (14) form micron-level pores (20 - 50μm) to form a local narrow channel. When gas flows through, the flow rate increases and the static pressure decreases. Part of the impact kinetic energy is converted into the kinetic energy of high-speed flow, reducing the direct pressure on the sensitive film layer.

[0036] In this embodiment, the first-layer hollow structure (13) is a vertically arranged platinum strip, and the second-layer hollow structure (14) is a horizontally arranged aluminum strip. The hollow structure of this application realizes gas impact buffering through a unique double-layer orthogonal fence-like design. When high-pressure gas impacts the rectangular micropores formed by the first-layer hollow structure (13) and the second-layer hollow structure (14), the longitudinal air flow is divided into multiple micro-flows by the vertical arrangement structure, and the impact kinetic energy is absorbed through the elastic deformation of the platinum strip; the transverse air flow generates turbulent deceleration under the guidance of the horizontally arranged aluminum strip, converting the impact energy into heat energy. Combining with the Venturi effect in the pores, the deformation amount of the film layer under pressure impact is reduced by 20% - 50%, and the pressure resistance limit is improved.

[0037] In this application, the second-layer silicon (4), the second-layer isolation layer (3), the first-layer silicon (1), and the oxide layer (7) form the pressure-sensitive film structure of the sensor. The data is transmitted to the metal (9) to connect the P+ doped layer (6) and form a bonding pad on the surface of the oxide layer (7). The data of the sensitive resistor element (5) is transmitted to the outside of the sensor through the P+ doped layer (6) and the metal (9). After using the technical solution of the present invention, there is no need to thin the thickness of the pressure-sensitive film structure. Instead, a silicon island film structure (11) is provided at the back cavity, so that the pressure-sensitive elements are all located at positions with greater stress, improving the sensitivity of the sensor. At the same time, a hollow structure is made on the silicon island film structure (11) to form a hollow silicon island structure. Compared with the conventional silicon island structure, the hollow silicon island structure can withstand greater pressure. This application can accurately generate the silicon island film structure and the silicon island film hollow structure at a relatively low cost, effectively improving the pressure resistance and sensitivity of the sensor.

[0038] The hollow structure in this application realizes the multi-stage conversion of gas impact energy through an orthogonal fence-like geometric design. The first-layer vertical platinum fence uses its high Young's modulus characteristic to convert the longitudinal impact kinetic energy into structural potential energy through elastic deformation; the low stiffness characteristic of the second-layer horizontal aluminum fence disperses the residual stress through lateral displacement deformation. The orthogonal network support framework formed by the double-layer structure reconstructs the stress transmission path, enabling the impact load to diffuse synchronously along the X / Y axes and avoiding single-point stress concentration. The metal layer interface generates micro-slip friction under dynamic impact, converting part of the kinetic energy into heat energy dissipation based on the Coulomb friction effect. The micron-sized pores (20 - 50 μm) regulate the flow field through the Venturi effect: the narrow channel accelerates the gas flow velocity to reduce the static pressure, and the sudden expansion structure at the pore outlet induces the separation of the turbulent boundary layer, further dissipating energy through viscous resistance and vortices. Compared with the traditional hexagonal nanopores that rely on a single viscous energy dissipation mechanism, this application realizes a leap in pressure resistance while ensuring sensitivity through the synergistic action of three physical principles: elastic potential energy storage - frictional heat energy conversion - turbulent flow energy dissipation.

Claims

1. A high-sensitivity and high-voltage sensor manufacturing process, comprising the following steps: S1: Preparation of SOI silicon wafer; The SOI silicon wafer comprises: from top to bottom, a second silicon layer (4), a second isolation layer (3), a first silicon layer (1) and a first silicon dioxide isolation layer (2); S2: P+ and P- ion implantation forms a piezoresistive sensitive element; Injecting boron ions into the second silicon layer (4) to form a P-doped layer using light doping to form a sensitive resistor element (5); Then, boron ions are selected and implanted into the second silicon layer (4), and a P+ doped layer (6) is formed by heavy doping to form an ohmic contact electrical connection; The heavily doped structured P-doped layer (6) connects several sections of sensitive resistor elements (5) together and forms a Wheatstone bridge together with the metal; S3: growing an oxide layer and etching through holes; Growing an oxide layer (7) on the second silicon layer (4), and then dry-etching the oxide layer (7) to form a through hole (8); S4: metal sputtering and patterning; A layer of metal (9) is sputtered on the surface of the through hole (8) and the oxide layer (7) by a magnetron sputtering method to form metal interconnections and bonding pads between the varistors; It is characterized in that it also includes the following steps: S5: dry-etching the first insulating layer (2) on the back side of the silicon wafer, wherein the etching stop layer is the silicon-based substrate (1), and after etching to form an etching window on the first insulating layer (2), a mask layer (10) for etching a silicon island film structure is formed; S6: using a KOH solution to etch the silicon wafer, and forming a silicon island film structure (11) on the silicon-based substrate (1) based on the mask layer (10); S7: forming a first hollow structure (13) on the silicon island film structure (11); S8: forming a second layer of hollow structure (14) on the first layer of hollow structure to obtain a hollow silicon island structure.

2. A high-sensitivity and high-voltage sensor manufacturing process according to claim 1, characterized in that: Step S7 specifically includes the following steps: a1: performing CMP mechanical polishing to thin the silicon island film structure (11); a2: coating a layer of photoresist (12) having a regular spacing structure on the surface of the silicon island film structure (11) using a photoresist plate; a3: A platinum metal layer is deposited on the surface of the silicon island film structure (11) by magnetron sputtering, and then the photoresist (12) is peeled off by a lift-off process to form a vertical structure of the platinum metal layer, thereby obtaining a first-layer hollow structure (13).

3. A high-sensitivity and high-voltage sensor manufacturing process according to claim 1, characterized in that: Step S8 specifically includes the following steps: b1: depositing a layer of metal aluminum on the first hollow structure (13) by magnetron sputtering technology; b2: Spin-coat photoresist on the surface of metal aluminum and use a mask to develop the strip-shaped protective photoresist; b3: Etching of metal aluminum using acidic wet etching solution; b4: removing the protective photoresist to form a second-layer fence-like strip structure, thereby obtaining a second-layer hollow structure (14).

4. A high-sensitivity and high-voltage-resistant sensor manufacturing process according to claim 1, characterized in that: Step S6 specifically includes the following steps: c1: applying photoresist to protect the preset silicon island film structure on the silicon-based substrate (1); c2: using KOH solution to perform rough etching of silicon, etching left and right double windows on the first layer of silicon (1) as the base substrate; The photoresist protection area forms a boss structure; c3: remove the photoresist protective film; c4: Use KOH solution to perform fine etching, and etch the window and the boss simultaneously, until the window position is etched to the second isolation layer (3), to generate a silicon island film structure (11).

5. A high-sensitivity and high-voltage-resistant sensor, comprising: A second silicon layer (4), a second isolation layer (3) and a first silicon layer (1) are arranged from top to bottom, characterized in that: A cavity is provided in the first silicon layer (1) and reaches the second isolation layer (3), and a silicon island film structure (11) is provided in the cavity on the lower surface of the second isolation layer (3); A hollow structure is provided on the lower surface of the silicon island membrane structure (11); The hollow structure includes: two layers of hollow structures arranged from top to bottom.

6. A high-sensitivity and high-voltage-resistant sensor according to claim 5, characterized in that: The first layer of hollow structure is a fence-type strip structure.

7. A high-sensitivity and high-voltage-resistant sensor according to claim 6, characterized in that: The second layer of hollow structure is a fence-type strip structure, and the strip structure in the second layer of hollow structure is not parallel to the strip structure in the first layer of hollow structure.

8. A high-sensitivity and high-pressure-resistant sensor according to claim 5, characterized in that: A sensitive resistor element (5) and a P+ doped layer (6) are arranged in the second silicon layer (4); the P+ doped layer (6) connects several sections of the sensitive resistor element (5) together and forms a Wheatstone bridge together with the metal.

9. A high-sensitivity and high-voltage-resistant sensor according to claim 5, characterized in that: An oxide layer (7) is provided on the upper surface of the second silicon layer (4), a through hole (8) is provided in the oxide layer (7), the metal (9) fills the through hole (8) to connect the P+ doped layer (6), and the metal (9) forms a bonding pad on the surface of the oxide layer (7).

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