Precursor delivery systems and methods

Abstract

The invention provides a precursor delivery system and method. The precursor delivery system includes a storage container, a delivery line, and a reaction chamber. The storage container is used for storing a precursor. One end of the delivery pipeline is connected with the storage container, and a normally closed valve, a regulating valve and an atomic deposition valve are arranged on the delivery pipeline. The reaction chamber is connected to the other end of the delivery line such that the normally closed valve, the regulating valve, and the atomic deposition valve are located between the storage container and the reaction chamber. The precursor delivery system can accurately control the consumption of the precursor and improve the utilization rate of the precursor in the storage container.

Description

Technical Field

[0001] The present invention relates to a precursor delivery system and method. Background Art

[0002] Semiconductor processes generally include etching processes, dicing processes, and cleaning processes. In deposition processes, plasma-enhanced chemical vapor deposition (PECVD) processes, plasma-enhanced physical vapor deposition (PEPVD) processes, plasma-enhanced atomic layer deposition (PEALD) processes, plasma treatment processes, plasma-based ion implantation processes, or plasma doping (PLAD) processes are often used.

[0003] Taking the plasma-enhanced atomic layer deposition process as an example, precursors used as silicon sources and carbon sources are stored in a closed container or cylinder. When in use, the heated precursor vapor is delivered to the space of the processing substrate. However, when the vapor amount in the cylinder is inconsistent due to reasons such as uneven heating and changes in precursor usage, problems such as unstable coating rates will occur.

[0004] Therefore, in order to accurately control the consumption of precursors, reduce the number of times of replacing precursor cylinders, or reduce the number of times of replenishing precursor cylinders, and improve the utilization rate of precursors in the cylinders, how to overcome the above defects through structural improvement has become one of the important issues that this industry wants to solve. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a precursor delivery system in view of the deficiencies of the prior art. The precursor delivery system includes: a storage container for storing precursors; a delivery pipeline, one end of the delivery pipeline is connected to the storage container, and a normally closed valve, a regulating valve, and an atomic deposition valve are provided on the delivery pipeline; and a reaction chamber, the other end of the delivery pipeline is connected to the reaction chamber, so that the normally closed valve, the regulating valve, and the atomic deposition valve are located between the storage container and the reaction chamber.

[0006] Furthermore, the bottom surface and side surface of the storage container are surrounded by a heat supply member to heat the storage container.

[0007] Furthermore, the storage container is further connected to a replenishment pipeline to deliver liquid precursors from a liquid source to the storage container through the replenishment pipeline.

[0008] Further, the regulating valve is disposed between the atomic deposition valve and the normally closed valve.

[0009] Further, the vapor pressure range regulated by the regulating valve is from 0.5 to 50 Torr.

[0010] Further, the precursor is bis(diethylamino)silane (Si[N(C2H5)2]2H2, BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, BTBAS), tris(dimethylamino)silane (Si[N(CH3)2]3H, 3DMAS) or trimethylsilane (SiC3H 10 , TMS).

[0011] Further, the precursor delivery system further includes a gas delivery module for delivering a co-reactant to the reaction chamber.

[0012] Further, the gas delivery module includes at least two normally closed valves and a controller disposed between the two normally closed valves.

[0013] Further, the co-reactant is argon, oxygen or nitrogen.

[0014] In addition, the technical problem to be solved by the present invention is to provide a precursor delivery method for overcoming the deficiencies of the prior art. The precursor delivery method uses the aforementioned precursor delivery system, and the gas delivery method includes: Step S1: heating the storage container; Step S2: opening the normally closed valve; Step S3: allowing the precursor to enter the regulating valve; Step S4: opening the atomic deposition valve; and Step S5: delivering the precursor to the reaction chamber.

[0015] To enable a further understanding of the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a pipeline schematic diagram of the precursor delivery system according to the first embodiment of the present invention.

[0017] Figure 2 is a schematic diagram of the use state of the precursor delivery system according to the first embodiment of the present invention.

[0018] Figure 3 is a flowchart of the precursor delivery method of the present invention.

[0019] Figure 4 is a pipeline schematic diagram of the precursor delivery system according to the second embodiment of the present invention.

[0020] Reference numerals: S1 to S5: steps; A: first precursor delivery module; B: second precursor delivery module; C: gas delivery module; P: liquid precursor; V: precursor vapor; 10: storage container; 10a: first precursor storage container; 10b: second precursor storage container; 11: heat supply; 20: delivery pipeline; 20a: first precursor delivery pipeline; 20b: second precursor delivery pipeline; 20c: gas delivery pipeline; 21: normally closed valve; 21a: first normally closed valve; 21b: second normally closed valve; 22: regulating valve; 22a: first regulating valve; 22b: second regulating valve; 23: atomic deposition valve; 23a: first atomic deposition valve; 23b: second atomic deposition valve; 24a: first gas branch pipe; 24b: second gas branch pipe; 25a, 27a: first gas normally closed valve; 25b, 27b: second gas normally closed valve; 26a: first controller; 26b: second controller; 28a: first storage container; 28b: second storage container; 30: reaction chamber; 40: liquid replenishment pipeline; 41: liquid replenishment normally closed valve; 42: liquid source; 50: exhaust pipeline; 51: exhaust valve; 52: air extraction pump; 100A, 100B: precursor delivery system; 241, 242, 243: gas delivery branch pipes; 251, 252, 253, 271, 272, 273: gas normally closed valves; 261, 262, 263: gas controllers; 281, 282, 283: gas storage containers. Detailed implementation manners

[0021] The following are specific examples to illustrate the implementation manners of the "precursor delivery system and method" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Additionally, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not drawn according to actual sizes. The following implementation manners will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention.

[0022] It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another. Additionally, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

[0023] First embodiment

[0024] Please refer toFigure 1 , the present invention provides a precursor delivery system 100A, which includes a storage container 10 for storing precursors, a delivery pipeline 20 for delivering precursors, and a reaction chamber 30 for substrate processing. Herein, "precursor" refers to a compound participating in a chemical reaction, which generates another compound on a substrate to form the main backbone of a film matrix or film. Specifically, the precursor can be bis(diethylamino)silane (Si[N(C2H5)2]2H2, BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, BTBAS), tris(dimethylamino)silane (Si[N(CH3)2]3H, 3DMAS), or trimethylsilane (SiC3H 10 , TMS).

[0025] Furthermore, the bottom and side surfaces of the storage container 10 are surrounded by a heat supply member 11. When using the precursor, the heat supply member 11 can heat the storage container 10 to uniformly increase the temperature of the precursor, thereby converting the liquid precursor P into precursor vapor V. Since the precursor in the storage container 10 is consumed as it is used, when the liquid level height of the precursor changes, the air pressure in the storage container 10 will change, resulting in inconsistent amounts of vapor delivered to the reaction chamber 30. Therefore, the precursor delivery system of the present invention is provided with a normally closed valve 21, a regulating valve 22, and an atomic deposition valve 23 on the delivery pipeline 20.

[0026] Specifically, both ends of the delivery pipeline 20 are respectively connected to the storage container 10 and the reaction chamber 30. A normally closed valve 21, a regulating valve 22, and an atomic deposition valve 23 are sequentially arranged on the delivery pipeline 20. The normally closed valve 21 is the first valve to open the storage container 10, enabling the precursor vapor V to enter the delivery pipeline 20 and be intercepted by the regulating valve 22, where the pressure can be adjusted. In one embodiment, the vapor pressure range adjusted by the regulating valve 22 is 0.5 to 50 Torr, preferably 1 to 30 Torr (for example, any positive integer between 1 and 30). For example, the regulating valve 22 can be a regulating valve purchased from Swagelok Company.

[0027] Furthermore, after the precursor vapor V adjusts the vapor pressure in the regulating valve 22, the regulating valve 22 is opened to enable the precursor vapor V to enter the atomic deposition valve 23 to prepare for injection into the reaction chamber 30. The atomic deposition valve 23 is suitable for achieving rapid switching between precursor vapors V. When the atomic deposition valve 23 is opened, the precursor vapor V can be directly injected into the reaction chamber 30 at a stable air pressure. Therefore, in the present invention, the regulating valve 22 is arranged between the atomic deposition valve 23 and the normally closed valve 21 on the delivery pipeline 20, which can effectively control the delivery pressure of the precursor vapor V and improve the uniformity of the deposited film.

[0028] On the other hand, please refer toFigure 2 Schematic diagram of the usage state of the precursor delivery system according to the first embodiment of the present invention. Further, the storage container 10 is also connected to a liquid replenishment pipeline 40. A normally closed liquid replenishment valve 41 is provided on the liquid replenishment pipeline 40 and is connected to a precursor liquid source 42. The precursor liquid source 42 can be a cylinder or container storing the liquid precursor P. When the liquid level of the liquid precursor P in the storage container 10 drops to a predetermined height requiring liquid replenishment, the normally closed liquid replenishment valve 41 can be opened for liquid replenishment.

[0029] The present invention can also provide a precursor delivery method. Please refer to Figure 3 the flowchart of. The precursor delivery method of the present invention includes step S1: heating the storage container 10; step S2: opening the normally closed valve 21; step S3: allowing the precursor to enter the regulating valve 22; step S4: opening the atomic deposition valve 23; and step S5: delivering the precursor to the reaction chamber 30.

[0030] More specifically, a heat supply member 11 can be used to heat the storage container 10 to convert the liquid precursor P into precursor vapor V. Subsequently, the normally closed valve 21 is opened to allow the precursor vapor V to enter the regulating valve 22 and be adjusted to a stable vapor pressure in the regulating valve 22. Subsequently, the normally closed valve 21 is closed and the atomic deposition valve 23 is opened to inject the precursor vapor V into the storage container 10 at a stable vapor pressure. Thus, the precursor delivery method of the present invention can maintain the stability of the delivery air pressure and improve the uniformity of the deposited thin film.

[0031] Second Embodiment

[0032] Figure 4 Pipeline schematic diagram of the precursor delivery system 100B according to the second embodiment of the present invention. As Figure 4 shown, the precursor delivery system 100B can include a first precursor delivery module A, a second precursor delivery module B, and a gas delivery module C.

[0033] In the first precursor delivery module A, a first precursor storage container 10a is connected to the reaction chamber 30 through a first precursor delivery pipeline 20a to deliver the precursor to the reaction chamber. It should be noted that a first normally closed valve 21a, a first regulating valve 22a, and a first atomic deposition valve 23a are provided on the first precursor delivery pipeline 20a. When the first normally closed valve 21a is opened, the precursor vapor V can enter the first precursor delivery pipeline 20a and the pressure is adjusted in the first regulating valve 22a. Subsequently, the first normally closed valve 21a is closed and the first regulating valve 22a is opened to allow the precursor vapor V to enter the atomic deposition valve 23a. When the atomic deposition valve 23a is opened, the precursor vapor V can be directly injected into the reaction chamber 30 at a stable air pressure.

[0034] Further, the first precursor delivery module A may further include a first gas branch pipe 24a connected to the first atomic deposition valve 23a. The first gas branch pipe 24a is used to introduce the co-reactant stored in the first storage container 28a into the first atomic deposition valve 23a, and inject it into the reaction chamber 30 through the same first precursor delivery pipeline 20a as the precursor vapor V.

[0035] Specifically, two first gas normally-closed valves 25a, 27a and a first controller 26a may be provided on the first gas branch pipe 24a between the first storage container 28a and the first atomic deposition valve 23a. The first controller 26a is arranged between the two first gas normally-closed valves 25a, 27a. When the gas in the first storage container 28a is to be used, the first gas normally-closed valve 27a is opened to allow the gas to flow to the first controller 26a. After controlling the gas flow rate, the first gas normally-closed valve 27a is closed, and the first gas normally-closed valve 25a is opened to allow the gas to flow to the first atomic deposition valve 23a and be injected into the reaction chamber 30 through 20a.

[0036] That is to say, the first storage container 28a can first adjust the flow rate through the first controller 26a to make the gas flow delivery stable before entering the processing chamber, so as to achieve the purpose of stable gas supply.

[0037] In the second precursor delivery module B, the second precursor storage container 10b is connected to the reaction chamber 30 through the second precursor delivery pipeline 20b to deliver the precursor to the reaction chamber. It should be noted that a second normally-closed valve 21b, a second regulating valve 22b and a second atomic deposition valve 23b are provided on the second precursor delivery pipeline 20b. When the second normally-closed valve 21b is opened, the precursor vapor V can enter the second precursor delivery pipeline 20b and the pressure is adjusted in the second regulating valve 22b. Subsequently, the second normally-closed valve 21b is closed, and the second regulating valve 22b is opened to allow the precursor vapor V to enter the atomic deposition valve 23b. When the atomic deposition valve 23b is opened, the precursor vapor V can be directly injected into the reaction chamber 30 at a stable air pressure.

[0038] Further, the second precursor delivery module B may further include a second gas branch pipe 24b connected to the second atomic deposition valve 23b. The second gas branch pipe 24b is used to introduce the co-reactant stored in the second storage container 28b into the second atomic deposition valve 23b, and inject it into the reaction chamber 30 through the same second precursor delivery pipeline 20b as the precursor vapor V.

[0039] Specifically, two second normally-closed gas valves 25b, 27b and a second controller 26b can be provided on a second gas branch pipe 24b between a second storage container 28b and a second atomic deposition valve 23b. The second controller 26b is arranged between the two second normally-closed gas valves 25b, 27b. When the gas in the second storage container 28b is to be used, the second normally-closed gas valve 27b is opened to allow the gas to flow to the second controller 26b. After controlling the gas flow rate, the second normally-closed gas valve 27b is closed and the second normally-closed gas valve 25b is opened to allow the gas to flow to the second atomic deposition valve 23b and be injected into the reaction chamber 30 through 20b.

[0040] That is to say, the second storage container 28b can first adjust the flow rate through the second controller 26b so that the gas flow delivery is stable before entering the processing chamber, in order to achieve the purpose of stable gas supply.

[0041] In addition, the gas delivery module C can be used to deliver a co-reactant to the reaction chamber 30. As used herein, the term "co-reactant" refers to a compound used to activate a precursor, modify a precursor, or catalyze the reaction of a precursor. Specifically, the co-reactant can be argon, oxygen, or nitrogen. However, the examples given above are only one possible embodiment and are not intended to limit the present invention.

[0042] The gas delivery module C can include gas storage containers 281, 282, 283, gas controllers 261, 262, 263, gas normally-closed valves 251, 252, 253, 271, 272, 273, gas delivery branch pipes 241, 242, 243, and a gas delivery pipeline 20c. The gas delivery pipeline 20c is connected to the reaction chamber 30 to deliver the co-reactant to the reaction chamber 30. Specifically, the gas storage containers 281, 282, 283 can be used to store co-reactants, such as argon, oxygen, or nitrogen. The co-reactants can be gathered to the gas delivery pipeline 20c through the gas delivery branch pipes 241, 242, 243.

[0043] That is, in the gas delivery module C, the gas normally-closed valves 251, 252, 253, 271, 272, 273 are arranged in pairs, and there are two gas normally-closed valves 251, 252, 253, 271, 272, 273 on each gas delivery branch pipe 241, 242, 243. In addition, gas controllers 261, 262, 263 can be arranged between the two gas normally-closed valves 251, 252, 253, 271, 272, 273. For example, the gas controllers 261, 262, 263 can be mass flow controllers.

[0044] Taking the gas delivery branch pipe 241 as an example, two normally closed gas valves 251 and 271 can be arranged on the gas delivery branch pipe 241, and the gas controller 261 can be arranged between the two normally closed gas valves 251 and 271. When the gas in the gas storage container 281 needs to be used, the normally closed gas valve 271 is opened to allow the gas to flow to the gas controller 261. After adjusting the flow rate in the gas controller 261, the normally closed gas valve 271 is closed and the normally closed gas valve 251 is opened to allow the gas to flow to the gas delivery pipeline 20c and enter the reaction chamber 30. It should be noted that the setting method of the gas delivery branch pipes 242 and 243 and the delivery methods of the gas storage containers 282 and 283 are the same as those of the gas delivery branch pipe 241 and the gas storage container 281, and will not be elaborated here. It should be noted that the precursor delivery system 100B of this embodiment takes the supply of three gases as an example. However, the above examples are only one feasible embodiment and are not intended to limit the present invention.

[0045] On the other hand, the reaction chamber 30 can be further connected to an exhaust pump 52, and an exhaust valve 51 can be arranged on the exhaust pipeline 50 connected to the exhaust pump 52 to control exhaust. For example, the exhaust valve 51 can be an angle valve, and the exhaust pump 52 can be a dry pump. However, the above examples are only one feasible embodiment and are not intended to limit the present invention.

[0046] Beneficial effects of the embodiment

[0047] One of the beneficial effects of the present invention is that the precursor delivery system and method provided by the present invention can accurately control the consumption of the precursor through the technical solutions of "one end of the delivery pipeline is connected to the storage container, and the other end of the delivery pipeline is connected to the reaction chamber" and "normally closed valves, regulating valves, and atomic deposition valves are arranged on the delivery pipeline", improve the utilization rate of the precursor in the cylinder, and thus reduce the number of times of replacing the precursor cylinder or reduce the number of times of replenishing the precursor cylinder.

[0048] Furthermore, due to the specific sequence in which the regulating valve is arranged between the atomic deposition valve and the normally closed valve in the present invention, the supply pressure of the precursor vapor can be effectively controlled, the uniformity of the deposited film can be improved, the consumption of the precursor can be accurately controlled, the utilization rate of the precursor in the cylinder can be increased, and the number of times of replenishing the precursor cylinder can be reduced.

[0049] In addition, when the precursor delivery system of the present invention supplies the co-reactant to the processing chamber, the co-reactant will flow through the controller and be supplied after the flow rate is adjusted, so as to achieve the purpose of stable gas supply. Therefore, the precursor delivery system of the present invention can be provided with multiple sets of precursor delivery pipes including regulating valves and gas supply pipes including controllers, and can switch the supply of the adjusted precursor and / or co-reactant gas between multiple sets of pipelines, reducing the number of times of replacing the precursor cylinder / gas cylinder.

[0050] The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the protection scope of the claims of the present invention.

Claims

1. A precursor delivery system, characterized in that, The precursor delivery system includes: a storage container for storing the precursor; a delivery pipeline, one end of the delivery pipeline is connected to the storage container, and a normally closed valve, a regulating valve, and an atomic deposition valve are provided on the delivery pipeline; and a reaction chamber, the other end of the delivery pipeline is connected to the reaction chamber, such that the normally closed valve, the regulating valve, and the atomic deposition valve are located between the storage container and the reaction chamber.

2. The precursor delivery system according to claim 1, characterized in that, The bottom and side surfaces of the storage container are surrounded by a heat supply member to heat the storage container.

3. The precursor delivery system according to claim 1, characterized in that, The storage container is further connected to a liquid replenishment pipeline to deliver the liquid precursor into the storage container from a liquid source through the liquid replenishment pipeline.

4. The precursor delivery system according to claim 1, characterized in that, The regulating valve is provided between the atomic deposition valve and the normally closed valve.

5. The precursor delivery system according to claim 1, characterized in that, The vapor pressure range adjusted by the regulating valve is 0.5 to 50 Torr.

6. The precursor delivery system according to claim 1, characterized in that, The precursor is bis(diethylamino)silane, bis(tert-butylamino)silane, tris(dimethylamino)silane, or trimethylsilane.

7. The precursor delivery system according to claim 1, characterized in that, The precursor delivery system further includes a gas delivery module for delivering a co-reactant to the reaction chamber.

8. The precursor delivery system according to claim 7, characterized in that, The gas delivery module includes at least two normally closed valves and a controller provided between the two normally closed valves.

9. The precursor delivery system according to claim 7, characterized in that, The co-reactant is argon, oxygen, or nitrogen.

10. A precursor delivery method, characterized in that, The precursor delivery system method uses the precursor delivery system according to claim 1, and the precursor delivery system method includes: Step S1: Heating the storage container; Step S2: Opening the normally closed valve; Step S3: Allowing the precursor to enter the regulating valve; Step S4: Opening the atomic deposition valve; and Step S5: Delivering the precursor to the reaction chamber.

Images