Device packaging method, integrated device packaging structure and related device and equipment

Abstract

The invention relates to the technical field of device packaging, and discloses a device packaging method, an integrated device packaging structure and related devices and equipment.The device packaging method comprises the steps that a substrate is prepared; the base plate comprises a base body and a connecting structure integrally formed with the base body. The connecting structure comprises a metal ring located on the first surface of the base body and a bonding pad located in the metal ring, and the metal ring and the bonding pad are in conductive connection in the base body; connecting a chip with the bonding pad on the first surface of the substrate so as to arrange the chip on the first surface of the substrate to form a to-be-packaged part; covering a first plastic package layer on the surface of the to-be-packaged piece provided with the chip; at least part of the first plastic packaging layer on the surface of the metal ring is removed to expose at least part of the surface of the metal ring, and a first plastic packaging film is formed; and covering the surface of the first plastic packaging film and the exposed first surface of the substrate with a metal layer to form a metal film. According to the invention, the step of independently processing the metal ring can be reduced, and the production cycle of device packaging is shortened.

Description

Technical Field

[0001] The present application relates to the technical field of device packaging, for example, to a device packaging method, an integrated device packaging structure, and related devices and equipment. Background Art

[0002] With the rapid development of fields such as radio frequency communication and vehicle-mounted electronics, the reliability requirements for acoustic devices in devices such as radio frequency devices and vehicle-mounted devices are getting higher and higher. Especially in harsh environments such as high humidity and high temperature, the airtightness of acoustic devices has become a key performance index. Airtight packaging of acoustic devices can effectively prevent water vapor from invading, improve the durability and stability of acoustic devices, and extend the service life of acoustic devices.

[0003] In related technologies, a metal ring is formed by reprocessing and electroplating on a substrate, and then an epoxy film and a metal film are used to achieve airtight packaging of the acoustic device.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in related technologies: The substrate requires additional processing steps to form a metal ring, resulting in a relatively long overall production cycle for device packaging.

[0005] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present application, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0006] To have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a general review, nor is it intended to identify key / important constituent elements or delineate the protection scope of these embodiments, but rather serves as a preamble to the subsequent detailed description.

[0007] Embodiments of the present disclosure provide a device packaging method, an integrated device packaging structure, and related devices and equipment to shorten the production cycle of device packaging.

[0008] In some embodiments, the device packaging method includes: preparing a substrate; wherein the substrate includes a substrate body and a connection structure integrally formed with the substrate body; the connection structure includes a metal ring located on the first surface of the substrate body and a pad located within the metal ring, and the metal ring and the pad are electrically connected inside the substrate body; connecting a chip to the pad on the first surface of the substrate body to dispose the chip on the first surface of the substrate, forming a to-be-packaged component; covering a first plastic encapsulation layer on the surface of the to-be-packaged component provided with the chip; removing at least a part of the first plastic encapsulation layer on the surface of the metal ring to expose at least a part of the surface of the metal ring, forming a first plastic encapsulation film; covering a metal layer on the surface of the first plastic encapsulation film and the exposed first surface of the substrate to form a metal film.

[0009] Optionally, the substrate is prepared as follows: Obtain a substrate designed with vias and a circuit diagram; stack the substrate and the connection material in the designed order and then perform lamination to form the substrate; etch the connection material on the first surface of the substrate to form a metal ring and pads located within the metal ring.

[0010] Optionally, connecting the chip to the pads on the first surface of the substrate includes: fabricating solder ball bumps on the surface to be connected of the chip according to the positions of the pads on the first surface of the substrate; flip-chip bonding the surface to be connected of the chip onto the first surface of the substrate so that the solder ball bumps are connected to the pads.

[0011] Optionally, removing at least a portion of the first encapsulation layer on the surface of the metal ring includes: removing at least a portion of the first encapsulation layer on the surface of the metal ring along the circumferential surface of the metal ring to expose an annular bare surface of the metal ring, forming a first encapsulation film.

[0012] Optionally, removing at least a portion of the first encapsulation layer on the surface of the metal ring includes: removing the first encapsulation layer extending from the edge of the substrate inward to at least a portion of the surface of the metal ring, forming a first encapsulation film.

[0013] Optionally, the thickness range of the first encapsulation film is [20 μm, 80 μm]; and / or, the thickness range of the metal film is [20 μm, 80 μm].

[0014] Optionally, covering and disposing a metal layer on the surface of the first encapsulation film and the first surface of the exposed substrate includes: depositing a first metal on the surface of the first encapsulation film and the first surface of the exposed substrate to form a seed layer; depositing a second metal on the surface of the seed layer to form a main body of the metal layer; depositing a first metal on the surface of the main body of the metal layer to form a protective layer.

[0015] Optionally, covering and disposing a metal layer on the surface of the first encapsulation film and the first surface of the exposed substrate includes: depositing a first metal on the surface of the first encapsulation film and the first surface of the exposed substrate to form a seed layer; electroplating a second metal on the surface of the seed layer to form a main body of the metal layer.

[0016] Optionally, the device packaging method further includes: covering and disposing a second encapsulation layer on the surface of the metal film to form a second encapsulation film.

[0017] Optionally, the thickness range of the second encapsulation film is [60 μm, 150 μm].

[0018] In some embodiments, the integrated device packaging structure is obtained by packaging through the device packaging method as described above.

[0019] In some embodiments, the acoustic device includes the integrated device packaging structure as described above.

[0020] In some embodiments, the radio frequency device includes the acoustic device as described above.

[0021] In some embodiments, the vehicle-mounted device includes the acoustic device as described above, or the radio frequency device as described above.

[0022] The device packaging method, integrated device packaging structure, and related devices and equipment provided by the embodiments of the present disclosure can achieve the following technical effects: In the embodiments of the present disclosure, through the multi-layer sealing design of the metal ring, the first plastic encapsulation film, and the metal film, excellent airtightness is provided, which can effectively prevent external environmental factors such as water vapor and dust from invading the inside of the package. Through the integrated design of the substrate and the metal ring, the steps of separately processing the metal ring during the packaging process can be reduced, the production process can be simplified, the production efficiency can be improved, thereby shortening the production cycle of device packaging, reducing the production cost at the same time, and improving the integrity and reliability of the packaging structure. In addition, the integrated design improves the mechanical strength of the packaging structure, can better withstand external mechanical stress, and can also reduce material waste, further reducing the production cost.

[0023] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily illustrated by corresponding drawings. These exemplary illustrations and the drawings do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and among them: Figure 1 is a schematic diagram of a device packaging method provided by an embodiment of the present disclosure; Figure 2 is a side view of an integrated device packaging structure provided by an embodiment of the present disclosure; Figure 3 is a side view of a substrate for device packaging provided by an embodiment of the present disclosure; Figure 4 is a side view of flip-chip bonding of a chip and a substrate on the basis of Figure 3 ; Figure 5 is a side view of the flip-chip bonding of the chip and the substrate completed on the basis of Figure 4 ; Figure 6 is a side view of setting the first plastic encapsulation layer on the basis of Figure 5 ; Figure 7 is a side view of setting the first plastic encapsulation layer on the basis of Figure 6Side view after removing at least part of the first encapsulation layer on the surface of the metal ring; Figure 8 Another one provided by an embodiment of the present disclosure is in Figure 6 Side view after removing at least part of the first encapsulation layer on the surface of the metal ring; Figure 9 One provided by an embodiment of the present disclosure is a side view after setting a metal layer on the basis of Figure 8 ; Figure 10 One provided by an embodiment of the present disclosure is a side view after performing finished product cutting on the basis of Figure 9 ; Figure 11 Schematic diagram of another device packaging method provided by an embodiment of the present disclosure; Figure 12 Side view of another integrated device packaging structure provided by an embodiment of the present disclosure; Figure 13 One provided by an embodiment of the present disclosure is a side view after setting a metal layer on the basis of Figure 7 ; Figure 14 One provided by an embodiment of the present disclosure is a side view after setting a second encapsulation layer on the basis of Figure 12 ; Figure 15 One provided by an embodiment of the present disclosure is a side view after performing finished product cutting on the basis of Figure 13 ;

[0025] Reference numerals: 10, substrate; 11, matrix; 12, connection structure; 121, metal ring; 122, solder pad; 123, conductive connection part; 124, electrical connection point; 15, solder ball; 20, chip; 30, first encapsulation film; 40, metal film; 50, second encapsulation film; 31, first encapsulation layer. Detailed implementation manners

[0026] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are only for reference and explanation, and are not used to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, multiple details are provided to provide a full understanding of the disclosed embodiments. However, one or more embodiments can still be implemented without these details. In other cases, well-known structures and devices can be shown in a simplified manner.

[0027] In the technical solutions described in this application, terms such as "first" and "second" are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that such data used can be interchanged under appropriate circumstances, so as to implement the embodiments of the present disclosure described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0028] Unless otherwise specified, the term "plurality" means two or more.

[0029] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship. For example, A / B means: A or B.

[0030] The term "and / or" is a description of the associated relationship of an object, indicating that three relationships can exist. For example, A and / or B means: A or B, or, the three relationships of A and B.

[0031] The term "corresponding" may refer to an associated relationship or a binding relationship. A corresponding to B means that there is an associated relationship or a binding relationship between A and B.

[0032] Combined Figure 1 As shown, the embodiments of the present disclosure provide a device packaging method, including: S101, prepare a substrate; wherein, the substrate includes a substrate body and a connection structure integrally formed with the substrate body; the connection structure includes a metal ring on the first surface of the substrate body and a pad located within the metal ring, and the metal ring and the pad are electrically connected inside the substrate body.

[0033] S102, connect the chip to the pad on the first surface of the substrate body to dispose the chip on the first surface of the substrate, forming a to-be-packaged component.

[0034] S103, cover and dispose a first encapsulation layer on the surface of the to-be-packaged component provided with the chip.

[0035] S104, remove at least part of the first encapsulation layer on the surface of the metal ring to expose at least part of the surface of the metal ring, forming a first encapsulation film.

[0036] S105, cover and dispose a metal layer on the surface of the first encapsulation film and the exposed first surface of the substrate, forming a metal film.

[0037] In the embodiments of the present disclosure, through the multi-layer sealing design of the metal ring, the first encapsulation film and the metal film, excellent airtightness is provided, which can effectively prevent external environmental factors such as water vapor and dust from invading the interior of the package. Through the integrated design of the substrate and the metal ring, the steps of separately processing the metal ring during the packaging process can be reduced, the production process can be simplified, and the production efficiency can be improved, thereby shortening the production cycle of device packaging, reducing production costs at the same time, and improving the integrity and reliability of the packaging structure. In addition, the integrated design improves the mechanical strength of the packaging structure, can better withstand external mechanical stress, and can also reduce material waste, further reducing production costs.

[0038] Based on the device packaging method as described above, in combination with Figure 2 and Figure 3 As shown, the embodiments of the present disclosure provide an integrated device packaging structure, including: a substrate 10, a chip 20, a first encapsulation film 30, and a metal film 40. The substrate 10 includes a substrate body 11 and a connection structure integrally formed with the substrate body 11; wherein, the connection structure includes a metal ring 121 located on the first surface of the substrate body 11 and a pad 122 located inside the metal ring 121, and the metal ring 121 and the pad 122 are conductively connected inside the substrate body 11. The chip 20 is connected to the pad 122 and is disposed on the surface of the substrate 10. The first encapsulation film 30 at least wraps and covers the outer surface of the chip 20 and exposes at least a part of the surface of the metal ring 121. The metal film 40 covers the first encapsulation film 30 and extends to cover the edge of the substrate 10 to cover the surface of the metal ring 121.

[0039] It can be understood that in the Figure 2 structure shown, the outer peripheral lines of the corners of the first encapsulation film 30 and the metal film 40 are not limited to rectangles, as long as the first encapsulation film 30 and the metal film 40 can cover the corresponding areas, and the outer peripheral lines of the corners can also be arcs, straight lines or irregular curves, etc.

[0040] In step S101, according to the structure of the substrate 10, the substrate 10 is prepared. As Figure 3 shown, the substrate 10 includes a substrate body 11 and a connection structure 12 integrally formed with the substrate body 11; the connection structure 12 includes a metal ring 121 located on the first surface of the substrate body 11 and a pad 122 located inside the metal ring 121, and the metal ring 121 and the pad 122 are conductively connected inside the substrate body 11.

[0041] Optionally, the substrate 10 is prepared as follows: Obtain a substrate body 11 designed with vias and circuit diagrams; stack the substrate body 11 and the connection material in the designed order and then perform lamination to form the substrate 10; etch the connection material on the first surface of the substrate body 11 to form a metal ring 121 and pads 122 located within the metal ring 121. In this embodiment, by stacking the substrate body 11 and the connection material in the designed order and then performing lamination, an integrated substrate 10 structure is formed. The lamination process tightly combines the substrate body 11 and the connection material, avoiding problems such as delamination, detachment, or deformation that may occur in traditional bonding processes, ensuring the long-term reliability of the substrate 10, and significantly enhancing the mechanical strength and stability of the substrate 10. The integrated forming process simplifies the process of splicing the metal ring 121 on the substrate 10 through the stacking and lamination steps, reduces the process complexity, and improves the production efficiency. In addition, the integrated forming process tightly combines the substrate body 11 and the connection material, reduces the impedance and signal loss in electrical connections, ensures the electrical connection reliability of the metal ring 121 and the pads 122, optimizes the signal transmission efficiency, and improves the electrical performance of the substrate 10.

[0042] In the substrate 10 of the embodiment of the present disclosure, as Figure 3 shown, the connection structure 12 includes a metal ring 121 and pads 122 located on the first surface of the substrate body 11, and a conductive connection portion 123 located inside the substrate body 11; wherein, the pads 122 are located within the metal ring 121, and the metal ring 121 and the pads 122 are respectively conductively connected to the conductive connection portion 123. It is possible to achieve the electrical connection between the metal ring 121 and the pads 122 inside the substrate body 11, as well as the pre-designed circuit functions.

[0043] Optionally, on the second surface of the substrate body 11, the connection structure 12 further forms additional electrical connection points 124, and the electrical connection points 124 are conductively connected to the conductive connection portion 123 to form an electrical connection with the metal ring 121 and the pads 122 inside the substrate body 11.

[0044] Optionally, the substrate 10 includes a plurality of connection structures 12 connected in sequence. Adjacent connection structures 12 are connected through the conductive connection portion 123. In each connection structure 12, it includes a metal ring 121 and pads 122 as Figure 3 shown. In this way, synchronous production of multiple device packaging structures can be achieved, improving the production efficiency.

[0045] In the substrate 10 of the embodiment of the present disclosure, the material of the substrate body 11 is not limited and can be determined according to actual needs. For example, polymer materials, fiber-reinforced resin composite materials, or silicon-based materials, etc.

[0046] Optionally, the material of the substrate body 11 includes the material for PCB boards. In this embodiment, the substrate 10 includes a PCB substrate.

[0047] Optionally, the material of the substrate 11 includes polymer materials. In different embodiments, the material of the substrate 11 can also be selected from composite materials such as glass fiber reinforced epoxy resin, carbon fiber reinforced composite materials, or silicon-based materials.

[0048] In this embodiment, using a polymer material as the substrate 11 can make the substrate 10 lighter and further reduce the packaging cost. The good insulation performance of the polymer material can effectively isolate electrical signals, reduce signal interference, improve the electrical performance of the device, and also prevent electrical faults such as short circuits, improving the reliability of the device.

[0049] Optionally, the polymer material includes: Core Material (core board material) or PP Material (polypropylene material). Among them, Core Material can be composed of copper foil, an insulating layer, and another layer of copper foil, and the middle insulating layer can be a cured resin and glass cloth. PP Material is a thermoplastic plastic prepared by the addition polymerization reaction of propylene.

[0050] Optionally, the material of the substrate 11 includes fiber-reinforced resin composite materials. For example, composite materials such as glass fiber reinforced resin, carbon fiber reinforced resin composite materials, etc., where the resin includes epoxy resin, phenolic resin, polyurethane resin, etc.

[0051] Optionally, the material of the substrate 11 includes silicon-based materials. For example, lithium tantalate silicate, 4H-silicon carbide, etc.

[0052] In the embodiments of the present disclosure, the material of the connection structure 12 is not limited, as long as it is a conductive metal that realizes electrical connection. For example, metal materials such as copper, aluminum, tin, or tin-silver-copper alloy, etc.

[0053] Optionally, the material of the connection structure 12 includes copper. In this embodiment, according to the pre-designed structure, the connection structure 12 is made of copper, and the substrate 11 material (for example, polymer material) and copper are laminated to obtain the PCB substrate 10 for device packaging. The PCB substrate 10 can provide functions such as mechanical support, electrical interconnection, and hermetic connection. Among them, the metal ring 121 surrounds the pad 122, and a hermetic sealing structure can be formed during device packaging, effectively preventing external environmental factors such as water vapor and dust from invading the inside of the package. The pad 122 is located inside the metal ring 121, providing a stable electrical connection point to ensure the reliability of the electrical connection. The pad 122 and the metal ring 121 are integrally formed, which can also reduce the connection problems between the pad 122 and the metal ring 121 in the package and improve the stability of the electrical connection.

[0054] Optionally, the height of the metal ring 121 is greater than or equal to the height of the pad 122 relative to the surface of the substrate 11.

[0055] In this embodiment, the height of the metal ring 121 is greater than or equal to the height of the pad 122, which can better surround the pad 122 to form a more effective sealing structure, preventing external environmental factors such as moisture and dust from invading the package interior. The higher metal ring 121 can provide better mechanical protection for the pad 122, reducing the impact of external mechanical stresses (such as vibration and shock) on the pad 122. The higher metal ring 121 can also increase the heat dissipation area, helping with heat dissipation and improving the thermal management performance of the device.

[0056] Optionally, in step S102, in combination with Figure 4 and Figure 5 as shown, connecting the chip 20 to the pad 122 on the first surface of the substrate 11 includes: fabricating solder ball bumps 15 on the surface of the chip 20 to be connected according to the position of the pad 122 on the first surface of the substrate 11; flip-chip bonding the surface of the chip 20 to be connected onto the first surface of the substrate 11 so that the solder ball bumps 15 are connected to the pad 122. In this embodiment, the solder ball bumps 15 can provide stable electrical connection, ensuring reliable signal transmission between the chip 20 and the substrate 10, and can also provide a certain mechanical connection strength, enhancing the bonding force between the chip 20 and the substrate 10. The material of the solder ball 15 can be determined according to actual requirements. For example, the solder ball 15 includes a gold ball, a tin ball, and a copper ball.

[0057] Optionally, the solder ball 15 includes a gold ball. In this embodiment, the gold ball is formed by thermocompression ultrasonic bonding of a gold wire, providing electrical connection between the chip 20 and the substrate 10. The gold ball has extremely high electrical conductivity, can provide a low-resistance electrical connection, reduce signal transmission loss, and improve the electrical performance of the device. The gold ball also has excellent oxidation resistance and corrosion resistance, can maintain stable performance in a harsh environment, and improve the reliability of the device. In addition, the gold ball connection technology is compatible with the traditional flip-chip 20 soldering process, has a high degree of process reuse, and is suitable for mass production.

[0058] In the device packaging structure of the embodiments of the present disclosure, the chip 20 is connected to the pad 122, the metal ring 121 is located outside the pad 122, and the relative position between the chip 20 and the metal ring 121 is not limited and can be set according to actual situations.

[0059] Optionally, the outside of the chip 20 can be in contact with the inner side of the metal ring 121; or, the outer edge of the chip 20 can be placed on a part of the upper surface of the metal ring 121.

[0060] Optionally, in combination with Figure 5As shown, during the flip-chip bonding process of the chip 20, for the selected chip 20 and substrate 10, there is a preset distance L between the outer side of the chip 20 and the inner side of the metal ring 121. In this way, the complexity of the flip-chip bonding process can be reduced, the situation of extrusion damage caused by the contact between the chip 20 and the metal ring 121 can be avoided, which is beneficial to large-scale production and yield improvement. In this embodiment, the existence of the preset distance ensures that the metal ring 121 can effectively surround the chip 20, forming a tighter sealing structure to prevent external environmental factors such as water vapor and dust from invading the package interior. The preset distance can provide sufficient buffer space for the chip 20, which can reduce the influence of external mechanical stresses (such as vibration and impact) on the chip 20, and can also better isolate the chip 20 and the metal ring 121, reducing electrical signal interference and improving the electrical performance of the device. In addition, the situation of extrusion damage caused by the contact between the chip 20 and the metal ring 121 can be avoided.

[0061] Optionally, the range of the preset distance L is (0 μm, 100 μm]. While ensuring the formation of a tight sealing structure, the size of the device package structure is taken into account. For example, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or any value within the range of (0 μm, 100 μm].

[0062] Optionally, the range of the preset distance L is [10 μm, 100 μm]. Optionally, the range of the preset distance L is [30 μm, 100 μm]. Optionally, the range of the preset distance L is [50 μm, 100 μm].

[0063] Optionally, the chip 20 is configured to implement electroacoustic - acousto - electric signal conversion and filtering; the main materials are Al electrodes and LT / LN substrates.

[0064] Combined with Figure 5 and Figure 6 As shown, after the flip-chip bonding process of the chip 20 is completed, the chip is disposed on the first surface of the substrate to form a to-be-packaged component (such as Figure 5 shown), and a first encapsulation layer is covered on the surface of the to-be-packaged component through step S103.

[0065] Optionally, in step S103, an epoxy film is molded on the surface of the to-be-packaged component provided with the chip to form an inner laminate, that is, the first encapsulation layer 31. It plays a role in airtight sealing, buffering and mechanical protection to a certain extent.

[0066] Combined with Figure 7 As shown, the operation of step S104 is performed on the first encapsulation layer 31 to form the first encapsulation film 30.

[0067] Optionally, step S104 includes: grooving the first encapsulation layer 31 with a laser to remove at least a portion of the first encapsulation layer 31 on the surface of the metal ring 121, forming a first encapsulation film 30.

[0068] Optionally, grooving the first encapsulation layer 31 with a laser includes: using a focusing lens to focus a high-power density laser beam on the first encapsulation layer 31 on the surface of the metal ring 121; after the irradiated material absorbs the laser energy, its temperature rises rapidly, reaching the melting, vaporization, ablation or ignition point.

[0069] Optionally, removing at least a portion of the first encapsulation layer 31 on the surface of the metal ring 121 includes: removing at least a portion of the first encapsulation layer 31 on the surface of the metal ring 121 along the circumferential surface of the metal ring 121 to expose the annular exposed surface of the metal ring 121, forming a first encapsulation film 30. In this embodiment, in the case of only removing a portion of the first encapsulation layer 31 on the surface of the metal ring 121, as Figure 7 shown, the first encapsulation film 30 will extend to cover a portion of the surface of the metal ring 121, capable of forming a tighter sealing structure to prevent external environmental factors such as water vapor and dust from invading the interior of the package, and can also provide better mechanical protection for the metal ring 121 and the chip 20, reducing the impact of external mechanical stress (such as vibration and shock) on the package structure. This design can also simplify the packaging process, reduce production steps, shorten the production cycle of the device package structure, and improve production efficiency.

[0070] Optionally, as combined with Figure 8 shown, removing at least a portion of the first encapsulation layer 31 on the surface of the metal ring 121 includes: removing the first encapsulation layer 31 that extends from the edge of the substrate 10 inward to at least a portion of the surface of the metal ring 121, forming a first encapsulation film 30. In another alternative embodiment, when removing the first encapsulation layer 31 on the surface of the metal ring 121, as Figure 8 shown, it is also possible to synchronously remove the first encapsulation layer 31 that extends from the edge of the substrate 10 inward to at least a portion of the surface of the metal ring 121, further simplifying the packaging process. Therefore, according to different actual process conditions, it is possible to choose to remove or retain the first encapsulation layer 31 on the surface of the substrate 10 outside the metal ring 121.

[0071] Optionally, the first encapsulation film 30 includes an epoxy thermosetting colloidal film. The epoxy thermosetting colloidal film is a film material with an epoxy resin as the matrix, which is cross-linked and cured by heating or adding a curing agent. In this embodiment, the application environment of the acoustic device ranges from -40 degrees Celsius to 105 degrees Celsius. In a high-temperature environment, affected by the temperature, the first encapsulation film 30 will experience a certain degree of thermal expansion. Specifically, the thermal expansion in the thickness direction will push open the metal film 40. Therefore, considering the mechanical protection effect and the influence of thermal expansion, the thickness of the first encapsulation film 30 has a suitable range. Preferably, the thickness h1 of the first encapsulation film 30 ranges from [20 μm, 80 μm]. For example, the thickness h1 of the first encapsulation film 30 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0072] Optionally, covering and disposing a metal layer on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 in step S105 includes: depositing a first metal on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 to form a seed layer; depositing a second metal on the surface of the seed layer to form a main body of the metal layer; depositing a first metal on the surface of the main body of the metal layer to form a protective layer.

[0073] Combined Figure 9 As shown, the metal film 40 is formed by sputtering, evaporation or electroplating to construct a metal airtight sealing layer, realizing the metal airtight sealing of the acoustic device, and at the same time, this encapsulation has a good electromagnetic shielding effect.

[0074] In the device packaging structure of the embodiments of the present disclosure, the material of the metal film 40 is not limited as long as it can perform electromagnetic shielding.

[0075] Optionally, the metal film 40 includes a copper film.

[0076] Optionally, the first metal includes Ni or Ti.

[0077] Optionally, the second metal includes copper.

[0078] Specifically, first deposit Ni or Ti material by sputtering or evaporation to form a seed layer, then form a copper film as the main body of the metal layer by electroplating or sputtering, and finally electroplate Ni or Ti material to form a protective layer to prevent copper corrosion.

[0079] Optionally, the thickness h2 of the metal film 40 ranges from [20 μm, 80 μm]. For example, the thickness h2 of the metal film 40 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0080] CombinedFigure 10 As shown, after the metal film 40 is set up, through finished product cutting, a plurality of acoustic devices that are complete and have good airtight sealing and electromagnetic shielding effects are formed.

[0081] Combined with Figure 11 As shown, the embodiment of the present disclosure also provides another device packaging method. After step S105, it further includes: S106. Cover and set a second plastic encapsulation layer on the surface of the metal film 40 to form a second plastic encapsulation film 50.

[0082] In this embodiment, an epoxy device packaging film is compression-molded again on the metal film 40 to form a second plastic encapsulation film 50, so as to further improve the airtightness of the acoustic device packaging. At the same time, the second plastic encapsulation film 50 can serve as a protective layer for the metal film 40 to protect the metal film 40 from oxidation due to contact with air moisture. Therefore, when setting the metal layer, the process of depositing a passivation metal layer can be omitted, reducing the process complexity. In addition, setting the second plastic encapsulation film 50 on the surface of the metal film 40 can make the overall thickness and morphology of the acoustic device packaging product consistent with those of the acoustic devices packaged by traditional processes, so that the packaging and testing environment and conditions of the traditional process-packaged acoustic devices can be fully reused, improving the compatibility with the packaging and testing processes and machines of traditional packaged devices, and further enhancing the reuse rate of the packaging and testing machines and processes, which is conducive to large-scale production and yield improvement.

[0083] It can be understood that the device packaging structure obtained in this embodiment is based on the device packaging structure of any of the foregoing embodiments, and then a second plastic encapsulation layer is covered and set on the surface of the metal film 40.

[0084] Based on the Figure 11 device packaging method as shown, combined with Figure 12 As shown, the embodiment of the present disclosure also provides another integrated device packaging structure, including: a substrate 10, a chip 20, a first plastic encapsulation film 30, a metal film 40, and a second plastic encapsulation film 50. The substrate 10 includes a base body 11 and a connection structure 12 integrally formed with the base body 11; wherein, the connection structure 12 includes a metal ring 121 located on the first surface of the base body 11 and a pad 122 located inside the metal ring 121, and the metal ring 121 and the pad 122 are electrically connected inside the base body 11. The chip 20 is connected to the pad 122 and is disposed on the surface of the substrate 10. The first plastic encapsulation film 30 at least wraps and covers the outer surface of the chip 20 and exposes at least part of the surface of the metal ring 121. The metal film 40 covers the first plastic encapsulation film 30 and extends to cover the edge of the substrate 10 to cover the surface of the metal ring 121. The second plastic encapsulation film 50 covers the metal film 40.

[0085] It can be understood that in Figure 12In the structure shown, the outer peripheral lines of the corners of the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 are not limited to rectangles, as long as the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 can cover the corresponding areas. The outer peripheral lines of the corners can also be arcs, straight lines, irregular curves, etc.

[0086] In this embodiment, the chip 20 is disposed on the surface of the substrate 10 by connecting with the pad 122. The surface of the chip 20 is sequentially covered with the first encapsulation film 30, the metal film 40, and the second encapsulation film 50. Compared with the metal film 40, the outermost second encapsulation film 50 is convenient for adsorption, so as to facilitate the device testing process of the packaged device. Moreover, by covering the first encapsulation film 30, the metal film 40, and the second encapsulation film 50, the thickness of the device can be increased, thereby reducing the occurrence of tumbling and offset when the device moves on the carrier tape, which is convenient for device testing. In addition, the three-layer encapsulation structure formed by the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 can further improve the encapsulation airtightness of the device.

[0087] Based on Figure 12 the shown device encapsulation structure, when forming the metal film 40 on the basis of Figure 7 , as shown in Figure 13 , optionally, a metal layer is covered and arranged on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10, including: depositing a first metal on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 to form a seed layer; electroplating a second metal on the surface of the seed layer to form a metal layer main body.

[0088] Optionally, as shown in Figure 14 , a second encapsulation layer is covered and arranged on the surface of the metal film 40, including: performing a C-Molding process (Compression Molding) on the surface of the metal film 40 to re-mold a layer of epoxy resin material on the metal film 40 to form a second encapsulation layer.

[0089] Optionally, the second encapsulation film 50 includes epoxy molding compound (EMC), and its full name is epoxy resin molding compound. EMC is a thermosetting chemical material used for semiconductor encapsulation. It is processed from epoxy resin as the matrix resin, high-performance phenolic resin as the curing agent, adding fillers such as silicon micropowder, and adding a variety of additives.

[0090] Optionally, the thickness h3 of the second encapsulation film 50 ranges from [60 μm, 150 μm]. For example, the thickness h3 of the second encapsulation film 50 can be 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, or any value within this range. According to different actual situations, the thickness of the second encapsulation film 50 can be further increased.

[0091] In this embodiment, the second encapsulation film 50 can protect the metal film 40 from contacting the air, thereby eliminating the need for the passivation process on the surface of the metal film 40 and reducing the process complexity. The second encapsulation film 50 covers the surface of the metal film 40, which can make the encapsulation surface smoother, improve the appearance quality and consistency of the encapsulation, and facilitate the subsequent process steps (such as marking, testing, etc.). Moreover, by setting the second encapsulation film 50, the thickness and top area of the device encapsulation structure can be increased, making the overall thickness and morphology of the acoustic device packaging product consistent with that of the acoustic device encapsulated by the traditional process. Thus, it can fully reuse the encapsulation and testing environment and conditions of the acoustic device encapsulated by the traditional process, such as realizing laser marking on the epoxy encapsulation film, reusing the fixture of the FT testing machine, the setting of testing parameters, and the tape size, improving the compatibility between the device encapsulation structure and the encapsulation and testing process and machine of the traditional encapsulated device, and further enhancing the reuse rate of the testing machine and process, which is beneficial to large-scale production and yield improvement.

[0092] Optionally, the thickness H of the device encapsulation structure ranges from [0.5 mm, 0.6 mm]. For example, the thickness H of the device encapsulation structure can be 0.50 mm, 0.52 mm, 0.54 mm, 0.56 mm, 0.58 mm, 0.60 mm, or any value within this range.

[0093] Optionally, in combination Figure 15 As shown, after the second encapsulation film 50 is set up, through finished product cutting, a plurality of complete acoustic devices with good airtight sealing and electromagnetic shielding effects are formed.

[0094] An embodiment of the present disclosure provides an acoustic device, including the integrated device encapsulation structure of any one of the foregoing embodiments.

[0095] The acoustic device of the embodiment of the present disclosure includes the device encapsulation structure of any one of the foregoing embodiments. Therefore, the acoustic device has all the technical effects of the device encapsulation structure, which will not be elaborated here.

[0096] An embodiment of the present disclosure provides a radio frequency device, including the foregoing acoustic device.

[0097] The radio frequency device according to an embodiment of the present disclosure includes the aforementioned acoustic device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the radio frequency device has all the technical effects of the device packaging structure, which will not be elaborated herein.

[0098] An embodiment of the present disclosure provides a vehicle-mounted device, which includes the aforementioned acoustic device or the aforementioned radio frequency device.

[0099] The vehicle-mounted device according to an embodiment of the present disclosure includes the aforementioned acoustic device or the aforementioned radio frequency device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the vehicle-mounted device has all the technical effects of the device packaging structure, which will not be elaborated herein.

[0100] The above description and the drawings fully illustrate the embodiments of the present disclosure so that those skilled in the art can practice them. Other embodiments may include structural, logical, electrical, process, and other changes. Embodiments only represent possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. Moreover, the terms used in this application are only for describing embodiments and do not limit the technical solutions described in this application. As used in the technical solutions described in this application, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to also include the plural forms. Similarly, as used in this application, the term "and / or" means any and all possible combinations including one or more of the associated listed items. Additionally, when used in this application, the term "comprise" and its variants "comprises" and / or "comprising" etc. refer to the presence of the stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groupings of these. Without further limitation, an element defined by the statement "including one..." does not exclude the presence of additional identical elements in the process, method, or device including the element. In this article, each embodiment may focus on the differences from other embodiments, and the same or similar parts among the various embodiments may be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method parts disclosed in the embodiments, the relevant parts may refer to the description of the method parts.

Claims

1. A device packaging method, characterized in that: include: Prepare a substrate; wherein the substrate includes a substrate and a connection structure integrally formed with the substrate; the connection structure includes a metal ring located on the first surface of the substrate and a pad located inside the metal ring, and the metal ring and the pad are electrically connected inside the substrate; Connecting the chip to the pad on the first surface of the substrate to place the chip on the first surface of the substrate to form a packaged part; A first plastic sealing layer is provided on the surface of the component to be packaged where the chip is provided; Removing at least a portion of the first plastic sealing layer on the surface of the metal ring to expose at least a portion of the surface of the metal ring to form a first plastic sealing film; A metal layer is provided on the surface of the first plastic packaging film and the exposed first surface of the substrate to form a metal film.

2. The device packaging method according to claim 1, characterized in that: Prepare the substrate as follows: obtaining a substrate designed with through holes and a circuit pattern; The base body and the connecting material are stacked and pressed together according to the designed sequence to form a substrate; The connection material on the first surface of the substrate is etched to form a metal ring and a pad inside the metal ring.

3. The device packaging method according to claim 1, characterized in that: Connecting the chip to the pad on the first surface of the substrate includes: Making solder ball bumps on the surface of the chip to be connected according to the position of the pads on the first surface of the substrate; The surface of the chip to be connected is bonded and flipped onto the first surface of the substrate, so that the solder ball bumps are connected to the pads.

4. The device packaging method according to claim 1, characterized in that: Removing at least a portion of the first plastic sealing layer on the surface of the metal ring includes: At least a portion of the first plastic sealing layer on the surface of the metal ring is removed along the ring surface of the metal ring to expose the bare surface of the metal ring in a ring shape, thereby forming a first plastic sealing film.

5. The device packaging method according to claim 1, characterized in that: Removing at least a portion of the first plastic sealing layer on the surface of the metal ring includes: The first plastic packaging layer extending inwardly from the edge of the substrate to at least a portion of the surface of the metal ring is removed to form a first plastic packaging film.

6. The device packaging method according to claim 1, characterized in that: The thickness of the first plastic film is in the range of [20 μm, 80 μm]; and / or, The thickness of the metal films ranges from [20 μm, 80 μm].

7. The device packaging method according to any one of claims 1 to 6, characterized in that: A metal layer is provided on the surface of the first plastic film and the first surface of the exposed substrate, including: Depositing a first metal on the surface of the first plastic film and the first surface of the exposed substrate to form a seed layer; Depositing a second metal on the surface of the seed layer to form a main body of the metal layer; A first metal is deposited on the surface of the metal layer body to form a protective layer.

8. The device packaging method according to any one of claims 1 to 6, characterized in that: A metal layer is provided on the surface of the first plastic film and the first surface of the exposed substrate, including: Depositing a first metal on the surface of the first plastic film and the first surface of the exposed substrate to form a seed layer; The second metal is electroplated on the surface of the seed layer to form a main body of the metal layer.

9. The device packaging method according to claim 8, characterized in that: Also includes: A second plastic sealing layer is provided on the surface of the metal film to form a second plastic sealing film.

10. The device packaging method according to claim 9, characterized in that: The thickness of the second plastic film ranges from [60 μm, 150 μm].

11. An integrated device packaging structure, characterized in that: The device packaging structure is obtained by packaging through the device packaging method according to any one of claims 1 to 10.

12. An acoustic device, characterized in that: Comprising the integrated device packaging structure as claimed in claim 11.

13. A radio frequency device, characterized in that: Comprising the acoustic device as claimed in claim 12.

14. A vehicle-mounted device, characterized in that: Includes the acoustic device as claimed in claim 12, or the radio frequency device as claimed in claim 13.

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