Substrate processing method and substrate processing system

Abstract

A substrate processing method is used for processing a substrate, and the substrate processing method comprises the following steps: grinding a first surface of the substrate and a second surface of the substrate; performing liquid treatment on the first surface in a first liquid treatment device; and performing liquid treatment on the second surface in a second liquid treatment device after performing liquid treatment on the first surface, in which, when an abnormality occurs in the first liquid treatment device or the second liquid treatment device, switching from the liquid treatment device in which the abnormality occurs to a normal liquid treatment device, and switching from the liquid treatment device in which the abnormality occurs to a normal liquid treatment device in which the abnormality occurs to a normal liquid treatment device in which the abnormality occurs. And performing the liquid treatment of the first surface and the liquid treatment of the second surface in a normal liquid treatment device.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing system. Background Art

[0002] A substrate processing system that grinds two surfaces of a substrate and etches the two surfaces is disclosed in Patent Document 1. The substrate processing system includes a first main surface etching device that etches a first main surface of the substrate, and a second main surface etching device that etches a second main surface of the substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: International Publication No. 2020 / 039802 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The technology related to the present disclosure improves the productivity of substrates in a substrate processing system.

[0008] Solutions to the Problems

[0009] One aspect of the present disclosure is a substrate processing method for processing a substrate, the substrate processing method including: grinding a first surface and a second surface of the substrate; performing liquid processing on the first surface in a first liquid processing device; and after performing the liquid processing on the first surface, performing liquid processing on the second surface in a second liquid processing device, wherein when an abnormality occurs in the first liquid processing device or the second liquid processing device, switching from the liquid processing device in which the abnormality has occurred to a normal liquid processing device, and performing the liquid processing on the first surface and the liquid processing on the second surface in the normal liquid processing device.

[0010] Effects of the Invention

[0011] According to the present disclosure, the productivity of substrates in a substrate processing system can be improved. Brief Description of the Drawings

[0012] Figure 1 It is a top view showing an outline of the structure of a wafer processing system.

[0013] Figure 2 It is an explanatory diagram showing main processes of wafer processing.

[0014] Figure 3 It is a flowchart showing main processes of wafer processing.

[0015] Figure 4It is a flowchart showing the wafer processing in the first mode.

[0016] Figure 5 It is a flowchart showing the wafer processing in the second mode.

[0017] Figure 6 It is a flowchart showing the wafer processing in the third mode.

[0018] Figure 7 It is a flowchart showing the wafer processing in the fourth mode.

[0019] Figure 8 It is a flowchart showing the wafer processing in the fifth mode.

[0020] Figure 9 It is a flowchart showing the wafer processing in the sixth mode. Detailed Description of the Invention

[0021] In the manufacturing process of semiconductor devices, both the front and back surfaces of a disk-shaped silicon wafer cut from a single crystal silicon ingot using a wire saw or the like are ground and etched. Then, a silicon wafer (hereinafter, sometimes referred to as "wafer") is manufactured.

[0022] In the substrate processing system disclosed in Patent Document 1 described above, after grinding both surfaces of the substrate, the second main surface is etched using a second main surface etching device, the substrate is turned upside down using a turning device, and the first main surface is etched using a first main surface etching device. Here, for example, when an abnormality occurs in the second main surface etching device, the second main surface cannot be etched, and the substrate processing in the substrate processing system stops. As a result, the productivity of the substrate decreases. However, the productivity of this substrate has not been considered in the past.

[0023] The technology related to the present disclosure improves the productivity of the substrate in the substrate processing system. Hereinafter, a wafer processing system as the substrate processing system according to the present embodiment and a wafer processing method as the substrate processing method will be described with reference to the drawings. In addition, in this specification and the drawings, elements having substantially the same functional structure are denoted by the same reference numerals, and redundant descriptions are omitted.

[0024] In the wafer processing system 1 according to the present embodiment, a process for improving the in-plane uniformity of the thickness is performed on a wafer W as a substrate. Hereinafter, the cut surfaces of the wafer W will be referred to as a first surface Wa and a second surface Wb. The first surface Wa is the surface on the opposite side of the second surface Wb.

[0025] As Figure 1As shown, the wafer processing system 1 has a structure in which a loading / unloading station 2 and a processing station 3 are connected in an integrated manner. The loading / unloading station 2 loads and unloads a cassette C capable of accommodating a plurality of wafers W to and from the outside. The processing station 3 includes various processing devices for performing desired processing on the wafers W.

[0026] A box loading platform 10 for loading a plurality of, for example, three boxes C is provided at the loading and unloading station 2. In addition, a wafer conveying device 20 is provided adjacent to the box loading platform 10 on the negative side of the X-axis of the box loading platform 10. The wafer conveying device 20 is configured to move freely on a conveying path 21 extending in the Y-axis direction. In addition, the wafer conveying device 20 has, for example, two conveying arms 22, 22 for holding and conveying wafers W. Each conveying arm 22 is configured to move freely in the horizontal direction and the vertical direction and to move freely around the horizontal axis and the vertical axis. In addition, the structure of the conveying arm 22 is not limited to the present embodiment, and any structure can be adopted. Moreover, the wafer conveying device 20 is configured to be able to convey wafers W to the box C of the box loading platform 10 and the conveying device 30 described later.

[0027] A transfer device 30 for transferring wafers W to and from the processing station 3 is provided adjacent to the wafer transfer device 20 at the loading / unloading station 2 on the negative side of the X axis.

[0028] For example, three processing blocks G1 to G3 are provided in the processing station 3. The first processing block G1, the second processing block G2, and the third processing block G3 are arranged in the order described from the positive direction side (carry-in / carry-out station 2 side) to the negative direction side of the X axis.

[0029] The first processing block G1 is provided with etching devices 40, 41, a reversing device 50, a thickness measuring device 60, and a wafer transfer device 70. The etching devices 40, 41, the reversing device 50, and the thickness measuring device 60 are stacked. In addition, the number and arrangement of the etching devices 40, 41, the reversing device 50, and the thickness measuring device 60 are not limited thereto.

[0030] like Figure 2As shown, a first etching apparatus 40, which is a first liquid processing apparatus, etches the ground wafer W in a grinding apparatus 130 described later. The first etching apparatus 40 includes: a wafer holding unit (not shown) that holds the wafer W; a rotation mechanism (not shown) that rotates the wafer holding unit; a nozzle 40a that supplies an etching solution to the wafer W; and a movement mechanism (not shown) that moves the nozzle 40a in the horizontal direction. The etching solution, which is a processing liquid, contains at least hydrofluoric acid or nitric acid to appropriately etch the silicon of the wafer W. Additionally, the etching solution may contain phosphoric acid or sulfuric acid. Further, in the first etching apparatus 40, the wafer W is rotated, and while the nozzle 40a reciprocates (scans) in the radial direction passing through the center of the wafer W, the etching solution is supplied from the nozzle 40a to the wafer W to etch the wafer W.

[0031] As Figure 2 shown, a second etching apparatus 41, which is a second liquid processing apparatus, etches the ground wafer W in the grinding apparatus 130 described later. The second etching apparatus 41 has the same structure as the first etching apparatus 40. That is, the second etching apparatus 41 includes: a wafer holding unit (not shown) that holds the wafer W; a rotation mechanism (not shown) that rotates the wafer holding unit; a nozzle 41a that supplies an etching solution to the wafer W; and a movement mechanism (not shown) that moves the nozzle 41a in the horizontal direction.

[0032] A flipping device 50 flips the first surface Wa and the second surface Wb of the wafer W in the vertical direction. The structure of the flipping device 50 is arbitrary.

[0033] In one example, a thickness measurement device 60 includes a measurement unit and a calculation unit. The measurement unit includes a sensor that measures the thickness of the etched wafer W at multiple points. The calculation unit obtains the thickness distribution of the wafer W based on the measurement results (the thickness of the wafer W) of the measurement unit and calculates the flatness (TTV: Total Thickness Variation) of the wafer W. Additionally, the control device 160 described later may perform the calculation of the thickness distribution and flatness of the wafer W instead of this calculation unit. In other words, a calculation unit may be provided in the control device 160 described later. Further, the structure of the thickness measurement device 60 is not limited to this and can be configured arbitrarily.

[0034] The wafer transfer device 70 is disposed on the negative X-axis side of the transfer device 30. The wafer transfer device 70 has, for example, two transfer arms 71, 71 that hold and transfer the wafer W. Each transfer arm 71 is configured to be movable freely in the horizontal direction and the vertical direction and to be movable freely about the horizontal axis and the vertical axis. Moreover, the wafer transfer device 70 is configured to be able to transfer the wafer W to the transfer device 30, the etching devices 40, 41, the flipping device 50, the thickness measuring device 60, the cleaning devices 80, 81 described later, the flipping device 90 described later, the thickness measuring device 100 described later, and the alignment device 110 described later.

[0035] In the second processing block G2, there are provided cleaning devices 80, 81, a flipping device 90, a thickness measuring device 100, an alignment device 110, and a wafer transfer device 120. The cleaning devices 80, the flipping device 90, the thickness measuring device 100, and the alignment device 110 are stacked and arranged. In addition, the number and arrangement of the cleaning devices 80, 81, the flipping device 90, the thickness measuring device 100, and the alignment device 110 are not limited to this.

[0036] As Figure 2 shown, the first cleaning device 80, which is the first liquid processing device, cleans the first surface Wa of the wafer W after grinding in the grinding device 130 described later. For example, the brush 80a is brought into contact with the first surface Wa to clean the first surface Wa. In addition, the pressurized cleaning liquid as the processing liquid is supplied from the nozzle 80b to the first surface Wa to clean the first surface Wa. Moreover, the first cleaning device 80 may also bring the brush 80c into contact with the second surface Wb to simultaneously clean the second surface Wb. At this time, the pressurized cleaning liquid may also be supplied from a nozzle (not shown) to the second surface Wb to clean the second surface Wb.

[0037] As Figure 2 shown, the second cleaning device 81, which is the second liquid processing device, cleans the second surface Wb of the wafer W after grinding in the grinding device 130 described later. The second cleaning device 81 has the same structure as the first cleaning device 80. That is, the second cleaning device 81 may also have a brush 81a and a nozzle 81b for cleaning the second surface Wb, and a brush 81c and a nozzle (not shown) for cleaning the first surface Wa.

[0038] As described above, in principle, the first cleaning device 80 cleans the first surface Wa, and the second cleaning device 81 cleans the second surface Wb. However, the first cleaning device 80 is configured to be able to clean the second surface Wb as well, and the second cleaning device 81 is configured to be able to clean the first surface Wa as well.

[0039] The flipping device 90 flips the first surface Wa and the second surface Wb of the wafer W in the vertical direction. The structure of the flipping device 90 is arbitrary.

[0040] In one example, the thickness measurement device 100 includes a measurement unit and a calculation unit. The measurement unit includes a sensor that measures the thickness of the ground wafer W at multiple points. The calculation unit obtains the thickness distribution of the wafer W based on the measurement results (the thickness of the wafer W) of the measurement unit, and calculates the flatness (TTV) of the wafer W. In addition, the calculation of the thickness distribution and flatness of the wafer W may be performed by a control device 160 described later instead of this calculation unit. In other words, a calculation unit may be provided in the control device 160 described later. In addition, the structure of the thickness measurement device 100 is not limited to this and can be arbitrarily configured.

[0041] As Figure 2 shown, the alignment device 110 has an alignment mechanism 110a that adjusts at least any one of the center position of the wafer W relative to a holding plate 133 described later and the orientation of the wafer W in the horizontal direction. In addition, the alignment device 110 also has a buffer function for temporarily holding the wafer W before processing that is transferred from the first processing block G1 to the second processing block G2. In addition, the structure of the alignment device 110 is arbitrary.

[0042] The wafer transfer device 120 is disposed on the positive Y-axis side of the cleaning devices 80 and 81, the flipping device 90, the thickness measurement device 100, and the alignment device 110. The wafer transfer device 120 has, for example, two transfer arms 121 and 121 that hold and transfer the wafer W. Each transfer arm 121 is supported by an articulated arm member 122 and is configured to be movable freely in the horizontal direction, the vertical direction, and to rotate freely about a horizontal axis and a vertical axis. Moreover, the wafer transfer device 120 is configured to be able to transfer the wafer W to the etching devices 40 and 41, the flipping device 50, the thickness measurement device 60, the cleaning devices 80 and 81, the flipping device 90, the thickness measurement device 100, the alignment device 110, and a grinding device 130 described later.

[0043] A grinding device 130 is provided in the third processing block G3. The grinding device 130 functions as a thinning device that thins the wafer W by grinding. In addition, the number and arrangement of the grinding devices 130 are not limited to this.

[0044] The grinding device 130 has a rotating table 131. The rotating table 131 is configured to rotate freely about a vertical rotation center line 132 by a rotation mechanism (not shown). Four holding disks 133 for sucking and holding the wafer W are provided on the rotating table 131. Two of the four holding disks 133, the first holding disks 133a, are the holding disks used for grinding at the first grinding position B1. These two first holding disks 133a are arranged at point-symmetrical positions across the rotation center line 132. The remaining two second holding disks 133b are the holding disks used for grinding at the second grinding position B2. These two second holding disks 133b are also arranged at point-symmetrical positions across the rotation center line 132. That is, the first holding disks 133a and the second holding disks 133b are arranged alternately in the circumferential direction.

[0045] The four holding disks 133 can be moved to the transfer positions A1 to A2 and the grinding positions B1 to B2 by the rotation of the rotating table 131. In addition, each of the four holding disks 133 is configured to be able to rotate about a vertical axis by a rotation mechanism (not shown).

[0046] The first transfer position A1 is a position on the positive X-axis side and the positive Y-axis side of the rotating table 131. When grinding the first surface Wa, the wafer W is transferred relative to the first holding disk 133a at this first transfer position A1. The second transfer position A2 is a position on the positive X-axis side and the negative Y-axis side of the rotating table 131. When grinding the second surface Wb, the wafer W is transferred relative to the second holding disk 133b at this second transfer position A2.

[0047] The first grinding position B1 is a position on the negative X-axis side and the negative Y-axis side of the rotating table 131. A first grinding unit 140 is arranged at this first grinding position B1. The first grinding unit 140 has a grinding portion 141 having a grinding stone (not shown) in a ring shape and capable of rotating freely. In addition, the grinding portion 141 is configured to be able to move in the vertical direction along a support column 142. As an example, the first grinding unit 140 grinds the first surface Wa or the second surface Wb of the wafer W held by the first holding disk 133a.

[0048] The second grinding position B2 is a position on the negative X-axis side and the positive Y-axis side of the rotating table 131. A second grinding unit 150 is arranged at this second grinding position B2. The second grinding unit 150 has a grinding portion 151 having a grinding stone (not shown) in a ring shape and capable of rotating freely. In addition, the grinding portion 151 is configured to be able to move in the vertical direction along a support column 152. As an example, the second grinding unit 150 grinds the second surface Wb or the first surface Wa of the wafer W held by the second holding disk 133b.

[0049] Furthermore, a thickness measuring device (not shown) for measuring the thickness of the ground wafer W at a plurality of points may be provided at the transfer positions A1 and A2 or the grinding positions B1 and B2.

[0050] The above wafer processing system 1 is provided with a control device 160. The control device 160 is, for example, a computer having a CPU, a memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. In addition, the above program can also be recorded in a storage medium H that can be read by a computer, and installed in the control device 160 from the storage medium H. In addition, the above storage medium H can be transient or non-transient.

[0051] Next, wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0052] First, a cassette C containing a plurality of wafers W is placed on the cassette stage 10 of the loading / unloading station 2. The wafers W are stored in the cassette C with the first surface Wa facing upward and the second surface Wb facing downward. Next, the wafers W in the cassette C are taken out by the wafer transfer device 20 and transferred to the conveyor device 30.

[0053] Next, the wafer W is transported to the alignment device 110 by the wafer transport device 70. Figure 2 As shown in (a), in the alignment device 110, the alignment mechanism 110a is used to adjust at least one of the center position of the wafer W relative to the first holding plate 133a and the orientation of the wafer W in the horizontal direction ( Figure 3 of S1).

[0054] Next, the wafer W is transferred to the grinding device 130 by the wafer transfer device 120 and transferred to the first holding plate 133a at the first transfer position A1. Figure 2 As shown in (b), the second surface Wb of the wafer W is held by the first holding plate 133a. Next, the rotating table 131 is rotated to move the wafer W to the first grinding position B1. The first grinding unit 140 is used to grind the first surface Wa of the wafer W ( Figure 3 Then, the rotating table 131 is rotated to move the wafer W to the first transfer position A1.

[0055] Next, the wafer W is transported to the first cleaning device 80 by the wafer transport device 120. Figure 2 As shown in (c), in the first cleaning device 80, the first surface Wa of the wafer W is cleaned using a brush 80a and a cleaning liquid from a nozzle 80b ( Figure 3In addition, in the first cleaning device 80, the second surface Wb may be cleaned using a brush 80c and a cleaning liquid.

[0056] Next, the wafer W is transferred to the reversing device 90 by the wafer transfer device 120. Figure 2 As shown in (d), the first surface Wa and the second surface Wb of the wafer W are turned upside down in the turning device 90 ( Figure 3 That is, the wafer W is turned over so that the first surface Wa faces downward and the second surface Wb faces upward.

[0057] Next, the wafer W is transported to the alignment device 110 by the wafer transport device 120. Figure 2 As shown in (e), in the alignment device 110, the alignment mechanism 110a is used to adjust at least one of the center position of the wafer W relative to the second holding plate 133b and the orientation of the wafer W in the horizontal direction ( Figure 3 S5).

[0058] Next, the wafer W is transferred to the grinding device 130 by the wafer transfer device 120 and transferred to the second holding plate 133b at the second transfer position A2. Figure 2 As shown in (f), the first surface Wa of the wafer W is held by the second holding disk 133b. Then, the rotating table 131 is rotated to move the wafer W to the second grinding position B2. Furthermore, the second surface Wb of the wafer W is ground by the second grinding unit 150 ( Figure 3 Then, the rotating table 131 is rotated to move the wafer W to the second transfer position A2.

[0059] Next, the wafer W is transported to the second cleaning device 81 by the wafer transport device 120. Figure 2 As shown in (g), in the second cleaning device 81, the second surface Wb of the wafer W is cleaned using a brush 81a and a cleaning liquid from a nozzle 81b ( Figure 3 In addition, in the second cleaning device 81, the first surface Wa may be cleaned using a brush 81c and a cleaning liquid.

[0060] Next, the wafer W is transported to the thickness measuring device 100 by the wafer transport device 120 or the wafer transport device 70. In the thickness measuring device 100, the thickness of the wafer W after grinding the first surface Wa and the second surface Wb is measured at a plurality of points to obtain the thickness distribution of the wafer W after grinding, and calculate the flatness ( Figure 3The thickness of the obtained wafer W and the calculated flatness of the wafer W are output to the control device 160, for example. Further, when a thickness measuring device is provided in the grinding device 130, the thickness of the ground wafer W may also be measured by the thickness measuring device of the grinding device 130.

[0061] Next, the wafer W is transferred to the second etching device 41 by the wafer transfer device 70. As Figure 2 shown in (h) of FIG. 1, in the second etching device 41, an etching solution is supplied from the nozzle 41a to the second surface Wb of the wafer W to etch the second surface Wb ( Figure 3 S9 of FIG. 1).

[0062] Next, the wafer W is transferred to the flipping device 50 by the wafer transfer device 70. As Figure 2 shown in (i) of FIG. 1, in the flipping device 50, the first surface Wa and the second surface Wb of the wafer W are flipped in the vertical direction ( Figure 3 S10 of FIG. 1). That is, the wafer W is flipped to a state where the first surface Wa faces upward and the second surface Wb faces downward.

[0063] Next, the wafer W is transferred to the thickness measuring device 60 by the wafer transfer device 70. In the thickness measuring device 60, the thickness distribution of the wafer W after etching the second surface Wb is obtained by measuring the thickness of the wafer W at a plurality of points, and the flatness of the wafer W is calculated (S11 of FIG. 15). The obtained thickness of the wafer W and the calculated flatness of the wafer W are output to the control device 160, for example.

[0064] Next, the wafer W is transferred to the first etching device 40 by the wafer transfer device 70. As Figure 2 shown in (j) of FIG. 1, in the first etching device 40, an etching solution is supplied from the nozzle 40a to the first surface Wa of the wafer W to etch the first surface Wa ( Figure 3 S12 of FIG. 1).

[0065] Next, the wafer W is transferred to the thickness measuring device 60 by the wafer transfer device 70. In the thickness measuring device 60, the thickness distribution of the wafer W after etching both the first surface Wa and the second surface Wb is obtained by measuring the thickness of the wafer W at a plurality of points, and the flatness of the wafer W is calculated ( Figure 3 S13 of FIG. 1). The obtained thickness of the wafer W and the calculated flatness of the wafer W are output to the control device 160, for example.

[0066] After that, the wafer W that has undergone all processes is transferred to the cassette C on the cassette stage 10 via the transfer device 30. By doing so, a series of wafer processes in the wafer processing system 1 are completed. In addition, the wafer W processed by the wafer processing system 1 can also be polished outside the wafer processing system 1.

[0067] In the wafer processing of the present embodiment, the control device 160 is programmed to etch the second surface Wb of the wafer W using the second etching device 41 in S9 and to etch the first surface Wa using the first etching device 40 in S12. That is, the control device 160 sets the transfer program of the transfer device 70 to transfer the wafer W to the second etching device 41 in S9 and sets the process when etching the second surface Wb in the second etching device 41. In addition, the control device 160 sets the transfer program of the wafer transfer device 70 to transfer the wafer W to the first etching device 40 in S12 and sets the process when etching the first surface Wa in the first etching device 40. In addition, the process includes processing conditions such as the number of times the nozzles 40a, 41a are scanned, the moving distance when the nozzles 40a, 41a are scanned, the scanning speed of the nozzles 40a, 41a, and the rotation speed (revolution speed) of the wafer W.

[0068] Here, for example, when an abnormality occurs in either the first etching device 40 or the second etching device 41, the wafer W cannot be etched in the etching device where the abnormality has occurred, and the wafer processing in the wafer processing system 1 stops. As a result, the productivity of the wafer W decreases. In addition, in the following description, sometimes one etching device in which an abnormality has occurred is referred to as an "abnormal etching device" as an abnormal liquid processing device, and the other normal etching device is referred to as a "normal etching device" as a normal liquid processing device.

[0069] In the present embodiment, when an abnormality occurs in either the first etching device 40 or the second etching device 41, the device is switched from the abnormal etching device to the normal etching device. Then, the etching of the first surface Wa and the second surface Wb is performed in the normal etching device. For example, when an abnormality occurs in the second etching device 41, in S9, the second surface Wb of the wafer W is etched using the first etching device 40, and in S12, the first surface Wa is etched using the first etching device 40.

[0070] The abnormality in the abnormal etching device is divided into a hardware error and a process error.

[0071] A hardware error is an error that occurs when an abnormal condition is detected in a component of the abnormal etching apparatus. The components to be monitored for abnormalities include various components, such as a wafer holding unit, a rotation mechanism of the wafer holding unit, a nozzle, a movement mechanism of the nozzle, an exhaust mechanism within the processing chamber of the apparatus, and so on. For example, sensors are provided for the wafer holding unit, rotation mechanism, movement mechanism, etc., and the operation of these components is monitored by the sensors, so abnormalities can be detected. In addition, sensors such as flow meters are also provided for the nozzle, and the flow rate of the etching solution supplied from the nozzle is constantly monitored by the sensors, so abnormalities can be detected. Also, sensors such as pressure gauges are provided for the processing chamber of the apparatus and the exhaust mechanism, and the pressure within the processing chamber and the exhaust pressure of the exhaust mechanism are constantly monitored by the sensors, so abnormalities can be detected.

[0072] A process error is an error that occurs when an abnormal condition is detected in the etching process of the abnormal etching apparatus. The process error is detected based on the thickness of the wafer W obtained in at least one of steps S11 and S13 and the calculated flatness of the wafer W. That is, when either the thickness or the flatness of the wafer W deviates from a preset range (threshold value), it is detected that a process error has occurred.

[0073] Next, an example of switching from the abnormal etching apparatus to the normal etching apparatus when an abnormality occurs in either the first etching apparatus 40 or the second etching apparatus 41 will be described using Figures 4 to 9 Six modes will be described. In addition, it is assumed that S1 to S8 are appropriately performed in all modes, and the thickness and flatness of the wafer W obtained in S8 are appropriate. Next, the steps after S9 will be illustrated and described. In the following description, the first wafer W processed by the wafer processing system 1 is referred to as the first wafer W1, the second wafer W is referred to as the second wafer W2, and the third wafer W is referred to as the third wafer W3.

[0074] Figure 4 It is a flowchart showing the wafer processing of the first mode. First, the following S9, S10, S12, and S13 are performed on the first wafer W1. In addition, in the first mode, the measurement of the thickness and the calculation of the flatness in S11 are omitted.

[0075] In S9, the second surface W1b of the first wafer W1 is etched in the second etching apparatus 41. At this time, the second surface W1b is etched with a quantitative etching amount according to a preset process.

[0076] In S10, the first surface W1a and the second surface W1b of the first wafer W1 are flipped in the vertical direction in the flipping device 50.

[0077] In S12, the first surface W1a of the first wafer W1 is etched in the first etching apparatus 40. At this time, the first surface W1a is etched with a predetermined etching amount according to a predetermined process. In addition, the etching amount of the first surface W1a in S12 may be different from the etching amount of the second surface W1b in S9.

[0078] In S13, the thickness of the first wafer W1 is measured in the thickness measuring apparatus 60, and the flatness of the first wafer W1 is calculated.

[0079] A case where an abnormality is detected, for example, in the second etching apparatus 41 when the processing of the first wafer W1 is completed as described above will be described. The abnormality of the second etching apparatus 41 is at least one of a hardware error and a process error. As described above, a sensor provided in a constituent member of the second etching apparatus 41 is used to detect a hardware error. A process error is detected based on the thickness and flatness of the first wafer W1 obtained in S13. For example, when the thickness of the first wafer W1 deviates from a set range, a process error is detected. In addition, when the flatness of the first wafer W1 deviates from a set range, a process error is also detected. Moreover, when it is determined that the cause of the process error is the second etching apparatus 41, the second etching apparatus 41 is detected as abnormal.

[0080] When an abnormality is detected in the second etching apparatus 41, the use of the second etching apparatus 41 is stopped, and the subsequent processing of the second wafer W2 is performed by switching from the second etching apparatus 41 to the first etching apparatus 40.

[0081] The following S9, S10, S12, and S13 are performed on the second wafer W2.

[0082] In S9, when the second surface W1b of the first wafer W1 is etched using the second etching apparatus 41 as described above, control is performed to change the transfer program of the wafer transfer apparatus 70 by the control apparatus 160 to transfer the second wafer W2 to the first etching apparatus 40. Then, the second surface W2b of the second wafer W2 is etched in the first etching apparatus 40. At this time, the etching amount of the second surface W2b is a fixed amount and is the same as the etching amount of the second surface W1b of the first wafer W1 described above. That is, when the first surface W1a of the first wafer W1 is etched in the first etching apparatus 40 as described above, control is performed by the control apparatus 160 to change the process so that the etching amount of the second surface W2b in the first etching apparatus 40 becomes the above amount.

[0083] In S10, the first surface W2a and the second surface W2b of the second wafer W2 are flipped in the vertical direction in the flipping apparatus 50.

[0084] In S12, the first surface W2a of the second wafer W2 is etched in the same first etching apparatus 40 as in S9. At this time, the etching amount of the first surface W2a is a fixed amount, which is the same as the etching amount of the first surface W1a of the first wafer W1 described above.

[0085] In S13, the thickness of the second wafer W2 is measured in the thickness measuring apparatus 60, and the flatness of the second wafer W2 is calculated.

[0086] Figure 5 It is a flowchart showing the wafer processing of the second mode. In the first mode, the case where the cause of the process error was found to be the second etching apparatus 41 was described, but sometimes it is impossible to determine which one of the first etching apparatus 40 and the second etching apparatus 41 is abnormal based on the thickness and flatness of the first wafer W1 obtained in S13.

[0087] Therefore, in the second mode, after the processing for the first wafer W1 (the same processing as in the first mode) is completed, the following S9 to S13 are performed on the subsequent second wafer W2. That is, the processing for the second wafer W2 is a processing for determining which one of the first etching apparatus 40 and the second etching apparatus 41 is abnormal, and S11 is added after the processing for the first wafer W1.

[0088] In S9, the second surface W2b of the second wafer W2 is etched in the second etching apparatus 41. At this time, the second surface W2b is etched with a fixed etching amount according to a predetermined process, and this etching amount is the same as the etching amount of the second surface W1b of the first wafer W1.

[0089] In S10, the first surface W2a and the second surface W2b of the second wafer W2 are flipped in the vertical direction in the flipping apparatus 50.

[0090] In S11, the thickness of the second wafer W2 is measured in the thickness measuring apparatus 60, and the flatness of the second wafer W2 is calculated.

[0091] In S12, the first surface W2a of the second wafer W2 is etched in the first etching apparatus 40. At this time, the first surface W2a is etched with a fixed etching amount according to a predetermined process, and this etching amount is the same as the etching amount of the first surface W1a of the first wafer W1.

[0092] In S13, the thickness of the second wafer W2 is measured in the thickness measuring apparatus 60, and the flatness of the second wafer W2 is calculated.

[0093] In this case, the thickness and flatness of the second wafer W2 after being etched by the second etching device 41 are obtained in S11, and the thickness and flatness of the second wafer W2 after being etched by the first etching device 40 are obtained in S13. Moreover, by comparing the thickness and flatness of the second wafer W2 obtained in S11 with the set ranges respectively, it is possible to detect whether the second etching device 41 is normal or abnormal. Similarly, by comparing the thickness and flatness of the second wafer W2 obtained in S13 with the set ranges respectively, it is possible to detect whether the first etching device 40 is normal or abnormal. Therefore, it is possible to determine which one of the first etching device 40 and the second etching device 41 has an abnormality in the process error.

[0094] For example, when an abnormality is detected in the second etching device 41, the use of the second etching device 41 is stopped, and the process for the subsequent third wafer W3 is switched to the first etching device 40.

[0095] The following S9, S10, S12, and S13 are performed on the third wafer W3.

[0096] In S9, when etching the second surface W1b of the first wafer W1 using the second etching device 41 as described above, the control device 160 is used to control and change the transfer program of the wafer transfer device 70 to transfer the third wafer W3 to the first etching device 40. Then, the second surface W3b of the third wafer W3 is etched in the first etching device 40. At this time, the etching amount of the second surface W3b is a fixed amount, which is the same as the etching amount of the second surface W1b of the first wafer W1 described above. That is, when etching the first surface W1a of the first wafer W1 in the first etching device 40 as described above, the control device 160 is used to control and change the process so that the etching amount of the second surface W3b in the first etching device 40 becomes the above amount.

[0097] In S10, the first surface W3a and the second surface W3b of the third wafer W3 are flipped in the vertical direction in the flipping device 50.

[0098] In S12, the first surface W3a of the third wafer W3 is etched in the first etching device 40 in the same manner as in S9. At this time, the etching amount of the first surface W3a is a fixed amount, which is the same as the etching amount of the first surface W1a of the first wafer W1 described above.

[0099] In S13, the thickness of the third wafer W3 is measured in the thickness measuring device 60, and the flatness of the third wafer W3 is calculated.

[0100] Figure 6It is a flowchart showing the wafer processing in the third mode. First, the following S9, S10, S12, and S13 are performed on the first wafer W1. In addition, in the third mode, the measurement of the thickness and the calculation of the flatness in S11 are omitted.

[0101] In S9, the second surface W1b of the first wafer W1 is etched in the second etching device 41. At this time, the second surface W1b is etched with a quantitative etching amount according to a pre-specified process.

[0102] In S10, the first surface W1a and the second surface W1b of the first wafer W1 are flipped in the vertical direction in the flipping device 50.

[0103] In S12, the first surface W1a of the first wafer W1 is etched in the first etching device 40. At this time, the first surface W1a is etched with an etching distribution (etching amount distribution) corrected based on the thickness and flatness of the ground first wafer W1 obtained in S8. Specifically, first, learning data related to the thickness and flatness of the wafer W when the parameters of the corrected process are changed is obtained in advance. Then, based on this learning data, the parameters of the process are optimized according to the thickness and flatness of the first wafer W1 obtained in S8 for correction so that the etched first surface W1a in S12 becomes flat. The parameters of the corrected process are arbitrary. For example, they are the number of times the nozzle 40a scans, the moving distance when the nozzle 40a scans, the scanning speed of the nozzle 40a, the rotation speed (number of revolutions) of the first wafer W1, etc. And the etching distribution in the corrected process is obtained.

[0104] In S13, the thickness of the first wafer W1 is measured in the thickness measurement device 60, and the flatness of the first wafer W1 is calculated.

[0105] Moreover, a situation where an abnormality is detected in the second etching device 41, for example, in the same way as in the first mode, is described. The abnormality of the second etching device 41 is at least one of a hardware error and a process error.

[0106] When an abnormality is detected in the second etching device 41, the use of the second etching device 41 is stopped, and the process for the subsequent second wafer W2 is switched from the second etching device 41 to the first etching device 40.

[0107] The following S9, S10, S12, and S13 are performed on the second wafer W2.

[0108] In S9, when etching the second surface W1b of the first wafer W1 using the second etching device 41 as described above, the control device 160 is used to control the transfer process of the wafer transfer device 70 to transfer the second wafer W2 to the first etching device 40. Then, the second surface W2b of the second wafer W2 is etched in the first etching device 40. At this time, the etching amount of the second surface W2b is a fixed amount, which is the same as the etching amount of the second surface W1b of the first wafer W1 described above. That is, as described above, when etching the first surface W1a of the first wafer W1 in the first etching device 40, the control device 160 is used to control the process change so that the etching amount of the second surface W2b in the first etching device 40 becomes the above amount.

[0109] In S10, in the flipping device 50, the first surface W2a and the second surface W2b of the second wafer W2 are flipped in the vertical direction.

[0110] In S12, similar to S9, the first surface W2a of the second wafer W2 is etched in the first etching device 40. At this time, the etching distribution of the first surface W2a is corrected in the same manner as the etching distribution of the first surface W1a of the first wafer W1 described above.

[0111] In S13, the thickness of the second wafer W2 is measured in the thickness measuring device 60, and the flatness of the second wafer W2 is calculated.

[0112] Figure 7 It is a flowchart showing the wafer processing of the fourth mode. The fourth mode determines which one of the first etching device 40 and the second etching device 41 has a process error abnormality in the third mode in the same manner as the second mode with respect to the first mode.

[0113] In the fourth mode, after the processing of the first wafer W1 (the same processing as in the third mode) is completed, the following S9 to S13 are performed on the subsequent second wafer W2. That is, the processing of the second wafer W2 is for determining which one of the first etching device 40 and the second etching device 41 is abnormal, and S11 is added after the processing of the first wafer W1.

[0114] In S9, the second surface W2b of the second wafer W2 is etched in the second etching device 41. At this time, the second surface W2b is etched with a fixed etching amount according to a predetermined process.

[0115] In S10, in the flipping device 50, the first surface W2a and the second surface W2b of the second wafer W2 are flipped in the vertical direction.

[0116] In S11, the thickness of the second wafer W2 is measured in the thickness measuring device 60, and the flatness of the second wafer W2 is calculated.

[0117] In S12, the first surface W2a of the second wafer W2 is etched in the first etching apparatus 40. At this time, the first surface W2a is etched with a predetermined etching amount according to a predetermined process.

[0118] In S13, the thickness of the second wafer W2 is measured in the thickness measuring apparatus 60, and the flatness of the second wafer W2 is calculated.

[0119] In this case, by comparing the thickness and flatness of the second wafer W2 obtained in S11 with the set ranges respectively, it is possible to detect whether the second etching apparatus 41 is normal or abnormal. Similarly, by comparing the thickness and flatness of the second wafer W2 obtained in S13 with the set ranges respectively, it is possible to detect whether the first etching apparatus 40 is normal or abnormal. Therefore, it is possible to determine which one of the first etching apparatus 40 and the second etching apparatus 41 has an abnormality in the process error.

[0120] For example, when an abnormality is detected in the second etching apparatus 41, the use of the second etching apparatus 41 is stopped, and the process for the subsequent third wafer W3 is switched from the second etching apparatus 41 to the first etching apparatus 40.

[0121] The following S9, S10, S12, and S13 are performed on the third wafer W3.

[0122] In S9, when the second surface W1b of the first wafer W1 is etched using the second etching apparatus 41 as described above, the control device 160 controls to change the transfer program of the wafer transfer device 70 to transfer the third wafer W3 to the first etching apparatus 40. Then, the second surface W3b of the third wafer W3 is etched in the first etching apparatus 40. At this time, the etching amount of the second surface W3b is a fixed amount, which is the same as the etching amount of the second surface W1b of the first wafer W1 described above. That is, when the first surface W1a of the first wafer W1 is etched in the first etching apparatus 40 as described above, the control device 160 controls to change the process so that the etching amount of the second surface W3b in the first etching apparatus 40 becomes the above amount.

[0123] In S10, the first surface W3a and the second surface W3b of the third wafer W3 are flipped in the vertical direction in the flipping device 50.

[0124] In S12, similarly to S9, the first surface W3a of the third wafer W3 is etched in the first etching apparatus 40. At this time, the etching distribution of the first surface W3a is corrected in the same manner as the etching distribution of the first surface W1a of the first wafer W1 described above.

[0125] In S13, the thickness of the third wafer W3 is measured in the thickness measurement device 60, and the flatness of the third wafer W3 is calculated.

[0126] Figure 8 It is a flowchart showing the wafer processing of the fifth mode. First, the following S9 to S13 are performed on the first wafer W1.

[0127] In S9, the second surface W1b of the first wafer W1 is etched in the second etching device 41. At this time, the second surface W1b is etched with a predetermined etching amount according to a predetermined process.

[0128] In S10, the first surface W1a and the second surface W1b of the first wafer W1 are flipped in the vertical direction in the flipping device 50.

[0129] In S11, the thickness of the first wafer W1 is measured in the thickness measurement device 60, and the flatness of the first wafer W1 is calculated.

[0130] In S12, the first surface W1a of the first wafer W1 is etched in the first etching device 40. At this time, the first surface W1a is etched with an etching distribution corrected based on the thickness and flatness of the etched first wafer W1 obtained in S11. The specific method for correcting the etching distribution is the same as the method for correcting the etching distribution of S12 for the first wafer W1 in the third mode.

[0131] In S13, the thickness of the first wafer W1 is measured in the thickness measurement device 60, and the flatness of the first wafer W1 is calculated.

[0132] In this case, by comparing the thickness and flatness of the first wafer W1 obtained in S11 with the set ranges respectively, it is possible to detect whether the second etching device 41 is normal or abnormal. Similarly, by comparing the thickness and flatness of the first wafer W1 obtained in S13 with the set ranges respectively, it is possible to detect whether the first etching device 40 is normal or abnormal. Therefore, it is possible to detect the occurrence of an abnormality in the first etching device 40 or the second etching device 41, and to determine which one of the first etching device 40 and the second etching device 41 is abnormal.

[0133] For example, when an abnormality is detected in the second etching device 41, the use of the second etching device 41 is stopped, and the processing of the subsequent second wafer W2 is switched to the first etching device 40.

[0134] The following S9 to S13 are performed on the second wafer W2.

[0135] In S9, when etching the second surface W1b of the first wafer W1 using the second etching device 41 as described above, the control device 160 controls to change the transfer program of the wafer transfer device 70 to transfer the second wafer W2 to the first etching device 40. Then, the second surface W2b of the second wafer W2 is etched in the first etching device 40. At this time, the etching amount of the second surface W2b is a fixed amount, which is the same as the etching amount of the second surface W1b of the first wafer W1 described above. That is, when etching the first surface W1a of the first wafer W1 in the first etching device 40 as described above, the control device 160 controls to change the process so that the etching amount of the second surface W2b in the first etching device 40 becomes the above amount.

[0136] In S10, the first surface W2a and the second surface W2b of the second wafer W2 are flipped in the vertical direction in the flipping device 50.

[0137] In S11, the thickness of the second wafer W2 is measured in the thickness measuring device 60, and the flatness of the second wafer W2 is calculated.

[0138] In S12, the first surface W2a of the second wafer W2 is etched in the first etching device 40 in the same manner as in S9. At this time, the etching distribution of the first surface W2a is corrected in the same manner as the etching distribution of the first surface W1a of the first wafer W1 described above.

[0139] In S13, the thickness of the second wafer W2 is measured in the thickness measuring device 60, and the flatness of the second wafer W2 is calculated.

[0140] Figure 9 It is a flowchart showing the wafer processing of the sixth mode. The wafer processing of the sixth mode is a change of the processing in S9 of the wafer processing of the fifth mode.

[0141] That is, in S9 for the first wafer W1, the second surface W1b is etched in the second etching device 41. At this time, the second surface W1b is etched with an etching distribution corrected based on the thickness and flatness of the ground first wafer W1 obtained in S8. The specific method for correcting the etching distribution is the same as the method for correcting the etching distribution in S12 for the first wafer W1 of the third pattern.

[0142] In addition, in S9 for the second wafer W2, the control device 160 controls to change the transfer program of the wafer transfer device 70 to transfer the second wafer W2 to the first etching device 40. Then, the second surface W2b is etched in the first etching device 40. At this time, the control device 160 corrects the etching distribution of the second surface W2b in the same manner as the etching distribution of the second surface W1b of the first wafer W1 described above.

[0143] In addition, S10 to S13 performed on the first wafer W1 and the second wafer W2 in the sixth mode are the same as S10 to S13 in the fifth mode, respectively, and thus the description thereof is omitted.

[0144] In addition, in the above first to sixth modes, the case where an abnormality is detected in the second etching device 41 has been described. In contrast, when an abnormality is detected in the first etching device 40, control is performed to cause the second etching device 41 to perform etching of the second surface W2b (second surface W3b) in S9 and etching of the first surface W2a (first surface W3a) in S12, respectively.

[0145] In any one of the above first to sixth modes, when an abnormality occurs in either the first etching device 40 or the second etching device 41, it is possible to switch from the abnormal etching device to the normal etching device to perform subsequent processing of the wafer W. Therefore, unlike the prior art, the wafer processing in the wafer processing system 1 is not stopped, and the productivity of the wafer W can be improved.

[0146] For example, when performing wafer processing on a plurality of wafers W in the wafer processing system 1, an abnormality may sometimes occur in the first etching device 40 or the second etching device 41 over time. For example, a hardware error may occur when components deteriorate over time. In addition, although the etching solution is recycled, a process error may occur when by-products generated by etching are mixed in the etching solution or the etching solution itself deteriorates over time. In the present embodiment, it is possible to detect such an abnormality occurring over time in real time and take countermeasures, and thus it is useful.

[0147] The above embodiment has described the case where the wafer processing system 1 includes the first etching device 40 and the second etching device 41, but the number of these etching devices 40 and 41 is not limited. For example, two or more first etching devices 40 may be provided, and two or more second etching devices 41 may be provided. Moreover, when abnormalities occur in all of the two or more second etching devices 41, the second etching devices 41 can be stopped from being used and switched to the first etching device 40. In addition, as a case where abnormalities occur in all of the two or more second etching devices 41, for example, a case where the two or more second etching devices 41 use a common etching solution circulation line and the etching solution has an abnormality can be considered.

[0148] In the above-described embodiments, the wafer processing in the case where an abnormality has occurred in either the first etching apparatus 40 or the second etching apparatus 41 has been described. However, the method of the present disclosure can also be applied in the case where an abnormality has occurred in other apparatuses. For example, the method of the present disclosure can also be applied in the case where an abnormality has occurred in the first cleaning apparatus 80 or the second cleaning apparatus 81. An abnormality in the first cleaning apparatus 80 or the second cleaning apparatus 81 includes a hardware error, that is, an abnormality of a constituent member.

[0149] In the wafer processing of the above-described embodiment, in S3, the first surface Wa of the wafer W is cleaned by the first cleaning apparatus 80, and in S7, the second surface Wb is cleaned by the second cleaning apparatus 81. For example, in the case where an abnormality has occurred in either the first cleaning apparatus 80 or the second cleaning apparatus 81, the apparatus is switched from the abnormal cleaning apparatus to a normal cleaning apparatus. Moreover, the cleaning of the first surface Wa and the second surface Wb is performed in a normal etching apparatus. For example, in the case where an abnormality has occurred in the second cleaning apparatus 81, in S3, the first surface Wa of the wafer W is cleaned by the first cleaning apparatus 80, and in S7, the second surface Wb is cleaned by the first cleaning apparatus 80. Also in this case, the wafer processing in the wafer processing system 1 is not stopped, and the productivity of the wafer W can be improved.

[0150] In addition, the grinding of the wafer W performed by the grinding apparatus 130 of the above-described embodiment includes the polishing of the wafer W.

[0151] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above-described embodiments can be omitted, replaced, or changed in various ways without departing from the appended claims and their gist. For example, the constituent elements of the above-described embodiments can be arbitrarily combined. Of course, the effects of the respective constituent elements involved in the combination can be obtained by such an arbitrary combination, and other effects and other effects that are clearly known to those skilled in the art from the description of this specification can also be obtained.

[0152] In addition, the effects described in this specification are merely explanatory or illustrative effects and not restrictive. That is, the technology related to the present disclosure can additionally or alternatively achieve other effects that are clearly known to those skilled in the art from the description of this specification with respect to the above-described effects.

[0153] Description of Reference Numerals

[0154] 1: Wafer processing system; 40: First etching apparatus; 41: Second etching apparatus; 130: Grinding apparatus; 160: Control apparatus; W: Wafer; Wa: First surface; Wb: Second surface.

Claims

1. A substrate processing method for processing a substrate, the substrate processing method comprising: Grind the first surface and the second surface of the substrate; Perform liquid treatment on the first surface in a first liquid treatment device; And After performing liquid treatment on the first surface, perform liquid treatment on the second surface in a second liquid treatment device, wherein, when an abnormality occurs in the first liquid treatment device or the second liquid treatment device, switch from the liquid treatment device with the abnormality to a normal liquid treatment device, and perform liquid treatment on the first surface and the second surface in the normal liquid treatment device.

2. The substrate processing method according to claim 1, wherein, The substrate processing method includes: measuring the thickness of the substrate after performing liquid treatment on the second surface, In the substrate processing method, detect the occurrence of the abnormality based on the thickness or the flatness of the substrate obtained according to the thickness.

3. The substrate processing method according to claim 1, wherein, It further includes: Measure the first thickness of the substrate after performing liquid treatment on the first surface; And Measure the second thickness of the substrate after performing liquid treatment on the second surface, In the substrate processing method, detect the occurrence of the abnormality based on the first thickness or the first flatness of the substrate obtained according to the first thickness, and the second thickness or the second flatness of the substrate obtained according to the second thickness, and determine which one of the first liquid treatment device and the second liquid treatment device is the liquid treatment device with the abnormality.

4. The substrate processing method according to claim 1, wherein, The liquid treatment is etching, Perform etching on the first surface according to a pre-specified process, Perform etching on the second surface according to a pre-specified process.

5. The substrate processing method according to claim 1, wherein, The liquid treatment is etching, The substrate processing method includes: measuring the thickness of the substrate after grinding the second surface, In the substrate processing method, Perform etching on the first surface according to a pre-specified process, Perform etching on the second surface according to a process corrected based on the thickness or the flatness of the substrate obtained according to the thickness.

6. The substrate processing method according to claim 1, wherein, The liquid treatment is etching, The substrate processing method includes: measuring the thickness of the substrate after etching the first surface, In the substrate processing method, Perform etching on the first surface according to a pre-specified process, Perform etching on the second surface according to a process corrected based on the thickness or the flatness of the substrate obtained according to the thickness.

7. The substrate processing method according to claim 1, wherein, The liquid treatment is etching, The substrate processing method includes: Measure the first thickness of the substrate after grinding the second surface; and Measure the second thickness of the substrate after etching the first surface, In the substrate processing method, Perform etching on the first surface according to a process corrected based on the first thickness or the first flatness of the substrate obtained according to the first thickness, Perform etching on the second surface according to a process corrected based on the second thickness or the second flatness of the substrate obtained according to the second thickness.

8. The substrate processing method according to claim 1, wherein, The abnormality is an abnormality of a constituent member of the first liquid treatment device or an abnormality of a constituent member of the second liquid treatment device.

9. A substrate processing system for processing a substrate, the substrate processing system having: A first liquid processing device that performs liquid processing on one side of the substrate; A second liquid processing device that performs liquid processing on one side of the substrate; and A control device, wherein, The control device performs the following control: Liquid treatment is performed on the first surface of the substrate after the first surface is ground in the first liquid treatment device; And Liquid treatment is performed on the second surface of the substrate after the second surface is ground in the second liquid treatment device, The control device controls the first liquid treatment device and the second liquid treatment device to switch from the liquid treatment device in which an abnormality has occurred to a normal liquid treatment device when an abnormality occurs in the first liquid treatment device or the second liquid treatment device, and perform the liquid treatment of the first surface and the liquid treatment of the second surface in the normal liquid treatment device.

10. The substrate processing system according to claim 9, wherein, It has a grinding device for grinding the first surface and the second surface.

11. The substrate processing system according to claim 9, wherein, It has a measuring unit, and after the liquid treatment of the second surface, the measuring unit measures the thickness of the substrate, The control device detects the occurrence of the abnormality based on the thickness measured by the measuring unit or the flatness of the substrate obtained according to the thickness.

12. The substrate processing system according to claim 9, wherein, It has: A first measuring unit that measures the first thickness of the substrate after the liquid treatment of the first surface; And A second measuring unit that measures the second thickness of the substrate after the liquid treatment of the second surface, The control device detects the occurrence of the abnormality based on the first thickness measured by the first measuring unit or the first flatness of the substrate obtained according to the first thickness, and the second thickness measured by the second measuring unit or the second flatness of the substrate obtained according to the second thickness, and determines which one of the first liquid treatment device and the second liquid treatment device is the liquid treatment device in which the abnormality has occurred.

13. The substrate processing system according to claim 9, wherein, The first liquid treatment device is a first etching device for etching one side of the substrate, The second liquid treatment device is a second etching device for etching one side of the substrate, The control device controls the first etching device and the second etching device to perform the etching of the first surface according to a predetermined process and perform the etching of the second surface according to a predetermined process.

14. The substrate processing system according to claim 10, wherein, It has a measuring unit, and after the second surface is ground in the grinding device, the measuring unit measures the thickness of the substrate, The first liquid treatment device is a first etching device for etching one side of the substrate, The second liquid treatment device is a second etching device for etching one side of the substrate, The control device controls the first etching device and the second etching device to perform the etching of the first surface according to a predetermined process and perform the etching of the second surface according to a process corrected based on the thickness measured by the measuring unit or the flatness of the substrate obtained according to the thickness.

15. The substrate processing system according to claim 9, wherein, It has a measuring unit, and after the first surface is etched, the measuring unit measures the thickness of the substrate, The first liquid treatment device is a first etching device for etching one side of the substrate, The second liquid treatment device is a second etching device for etching one side of the substrate, The control device controls the first etching device and the second etching device to etch the first surface according to a pre-specified process, and to etch the second surface according to a process corrected based on the thickness measured by the measuring unit or the flatness of the substrate obtained from the thickness.

16. The substrate processing system according to claim 10, wherein, comprising: a first measuring unit that measures a first thickness of the substrate after the second surface is ground in the grinding device; and a second measuring unit that measures a second thickness of the substrate after the first surface is etched, The first liquid processing device is a first etching device that etches one side of the substrate, The second liquid processing device is a second etching device that etches one side of the substrate, The control device controls the first etching device and the second etching device to etch the first surface according to a process corrected based on the first thickness measured by the first measuring unit or the first flatness of the substrate obtained from the first thickness, and to etch the second surface according to a process corrected based on the second thickness measured by the second measuring unit or the second flatness of the substrate obtained from the second thickness.

17. The substrate processing system according to claim 9, wherein, The control device detects an abnormality in a component of the first liquid processing device or an abnormality in a component of the second liquid processing device.

Images