Method for depositing metal nitride

Abstract

The present invention discloses a method of depositing a metal nitride, the method comprising: a metal-containing precursor feeding step and a nitrogen-containing precursor feeding step, a silicon-containing gas being fed in the metal-containing precursor feeding step and / or the nitrogen-containing precursor feeding step, and alternately repeating the metal-containing precursor feeding step and the nitrogen-containing precursor feeding step until the metal nitride film reaches the target thickness. By introducing the silicon-containing gas, the method for depositing the metal nitride provided by the invention can improve the deposition rate of the metal nitride and reduce the resistivity of the obtained metal nitride film at the same time.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a method for depositing metal nitride. Background Art

[0002] Titanium nitride thin film is a commonly used material in semiconductor devices. Its conductivity (30 - 70 μΩ·cm) is sufficient to form a good conductive connection, and its chemical and mechanical properties also make it commonly used as a barrier material.

[0003] Atomic layer deposition (ALD) method has been widely used in the deposition of conductive titanium nitride (TiN) layer and applied in semiconductor devices. TiCl4 has become an ideal titanium precursor for growing TiN due to its high reactivity and low cost, and NH3 is the nitrogen precursor.

[0004] Currently, the ALD process of TiCl4 + NH3 has successfully prepared TiN thin films in a relatively wide temperature window. However, the resistivity of the TiN thin films prepared by the conventional ALD process is relatively high. Therefore, the resistivity of TiN can be reduced by increasing the deposition process temperature. For example, TiN thin films with low resistance (<100 μΩ·cm) are prepared at a temperature above 500 °C.

[0005] However, high-temperature processes are not compatible with some semiconductor processes. For example, in DRAM products, TiN prepared at a relatively low temperature is required as the upper and lower electrodes. In addition, the stress problem of the thin films obtained by high-temperature ALD also limits its wide application. Therefore, how to reduce the resistivity of TiN is particularly important.

[0006] It can be understood that the above statements only provide background technology related to the present invention and do not necessarily constitute prior art. Summary of the Invention

[0007] Based on the above technical problems, the object of the present invention is to provide a method for depositing metal nitride, which improves the growth rate of the metal nitride thin film and reduces the resistance of the metal nitride thin film at the same time.

[0008] To achieve the above object, the present invention is realized through the following technical solutions:

[0009] The present invention provides a method for depositing metal nitride, comprising:

[0010] A metal precursor feeding step and a nitrogen precursor feeding step, a silicon-containing gas is fed in the metal precursor feeding step and / or the nitrogen precursor feeding step, and the metal precursor feeding step and the nitrogen precursor feeding step are alternately repeated until the metal nitride thin film reaches the target thickness.

[0011] Optionally, the silicon content in the metal nitride thin film is less than 3%.

[0012] Optionally, the metal precursor feeding step includes a plurality of metal precursor feeding sub-steps, each of the metal precursor feeding sub-steps includes a metal precursor supplying step and a first purging step, the nitrogen-containing precursor feeding step includes a plurality of nitrogen-containing precursor feeding sub-steps, and each of the nitrogen-containing precursor feeding sub-steps includes a nitrogen-containing precursor supplying step and a second purging step.

[0013] Optionally, the metal precursor feeding sub-step is performed at least once.

[0014] Optionally, the metal precursor feeding sub-step is repeatedly performed at least 5 times.

[0015] Optionally, the nitrogen-containing precursor feeding sub-step is performed at least once.

[0016] Optionally, the silicon-containing gas is fed in the metal precursor feeding sub-step.

[0017] Optionally, the silicon-containing gas is fed in the metal precursor supplying step.

[0018] Optionally, the silicon-containing gas is fed in the first purging step.

[0019] Optionally, the silicon-containing gas is fed in the metal precursor supplying step and the first purging step.

[0020] Optionally, the silicon-containing gas is fed after the metal precursor supplying step or after being fed in the first purging step.

[0021] Optionally, after the metal precursor feeding sub-step, a third purging step is further included.

[0022] Optionally, the silicon-containing gas is fed in the nitrogen-containing precursor feeding sub-step.

[0023] Optionally, the silicon-containing gas is fed in the nitrogen-containing precursor supplying step.

[0024] Optionally, the silicon-containing gas is fed in the second purging step.

[0025] Optionally, the silicon-containing gas is fed in the nitrogen-containing precursor supplying step and the second purging step.

[0026] Optionally, the silicon-containing gas is fed after the nitrogen-containing precursor supplying step or after the second purging step.

[0027] Optionally, after the nitrogen-containing precursor feeding step, the method further includes: a fourth purging step.

[0028] Optionally, the silicon-containing gas is at least one of SiH4, Si2H6, SiH2Cl2, SiHCl3, and SiCl4.

[0029] Optionally, the metal-containing precursor is at least one of TiCl4, TDMAT, TDEAT, TiI4, WF6, WCl6, W(CO)6, PDMAT, TaCl5, TaBr5, and TaF5.

[0030] Optionally, the nitrogen-containing precursor is at least one of NH3 or N2H4.

[0031] Optionally, the flow rate ratio of the silicon-containing gas to the metal-containing precursor is 0 to 50:1.

[0032] Optionally, the duration of the metal-containing precursor supply step is not more than 2 s.

[0033] Optionally, the duration of the metal-containing precursor supply step is 0.01 - 1 s.

[0034] Optionally, the duration of the first purging step is not more than 30 s.

[0035] Optionally, the duration of the nitrogen-containing precursor supply step is not more than 2 s.

[0036] Optionally, the duration of the second purging step is not more than 30 s.

[0037] Optionally, the duration of the third purging step is not more than 20 s.

[0038] Optionally, the duration of the fourth purging step is not more than 20 s.

[0039] The present invention also provides a method for depositing titanium nitride, including: a TiCl4 feeding step and an NH3 feeding step, a silicon-containing gas is fed in the TiCl4 feeding step, and after the TiCl4 feeding step, a third purging step is further included, and the TiCl4 feeding step and the NH3 feeding step are alternately repeated until the titanium nitride thin film reaches the target thickness.

[0040] The present invention also provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the method for depositing a metal nitride as described above is implemented.

[0041] The present invention also provides a semiconductor processing apparatus, including: a processor, a memory, and a program or instruction stored on the memory and executable on the processor, where when the program or instruction is executed by the processor, the method for depositing metal nitride is implemented.

[0042] The present invention has the following advantages compared with the prior art:

[0043] In the method for depositing metal nitride provided by the present invention, by introducing a silicon-containing gas, the deposition rate of the metal nitride is accelerated, the number of substrates processed per unit time (WPH, wafer per hour) is increased, and the efficiency of the process production is ensured.

[0044] In the method for depositing metal nitride provided by the present invention, the addition of the silicon-containing gas reduces the resistivity of the metal nitride material, and the electrical conductivity of the conductive layer material is ensured. Description of the Drawings

[0045] Figure 1 It is a partial schematic diagram of a semiconductor substrate;

[0046] Figure 2 It is a partial schematic diagram of another semiconductor substrate;

[0047] Figure 3 It is a schematic flow diagram of a method for depositing metal nitride in the prior art;

[0048] Figure 4 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 1 of the present invention;

[0049] Figure 5 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 2 of the present invention;

[0050] Figure 6 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 3 of the present invention;

[0051] Figure 7 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 4 of the present invention;

[0052] Figure 8 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 5 of the present invention;

[0053] Figure 9 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 6 of the present invention;

[0054] Figure 10 It is a schematic flow diagram of a method for depositing metal nitride in Embodiment 7 of the present invention;

[0055] Figure 11 Schematic flow chart of a method for depositing metal nitride according to Embodiment 8 of the present invention;

[0056] Figure 12 Schematic flow chart of a method for depositing metal nitride according to Embodiment 9 of the present invention;

[0057] Figure 13 Schematic flow chart of a method for depositing metal nitride according to Embodiment 10 of the present invention;

[0058] Figure 14 Schematic flow chart of a method for depositing metal nitride according to Embodiment 11 of the present invention;

[0059] Figure 15 Schematic flow chart of a method for depositing metal nitride according to Embodiment 12 of the present invention;

[0060] Figure 16 Schematic flow chart of a method for depositing metal nitride according to Embodiment 13 of the present invention;

[0061] Figure 17 XPS energy spectrum analysis chart of the metal nitride method obtained from Embodiment 14 and the comparative example of the present invention. Detailed implementation manners

[0062] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0063] It should be noted that in this document, the terms "include", "comprise", "have", or any other variant thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device including a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or terminal device. Without further limitation, the elements defined by the statement "including..." or "comprising..." do not exclude the presence of additional elements in the process, method, article, or terminal device including the said elements.

[0064] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, only for the purpose of facilitating and clearly assisting in explaining the objectives of the embodiments of the present invention.

[0065] It should be noted that, unless explicitly restricted, a compound mentioned by its constituent elements without specifying its specific stoichiometric ratio should be understood to cover all possible non-zero concentrations of each element. For example, titanium nitride (TiN) should be understood to cover all possible stoichiometric and non-stoichiometric compositions of titanium nitride, including TiN, Ti3N4, Ti4N3, Ti6N5, Ti2N, and TiN2.

[0066] It should be noted that the metal nitrides referred to herein are selected from at least one of TiN, WN, and TaN.

[0067] As Figure 1 shown, it is a partial structural schematic diagram of a semiconductor substrate 10. The semiconductor substrate 10 includes a material layer 11 (such as silicon oxide) on its surface. A plurality of recessed structures 12, i.e., characteristic regions, are formed on the material layer. The recessed structure 12 can be a hole-like structure or a groove-like structure. The side walls and the bottom wall of the recessed structure 12 include a bonding layer 13 (glue layer). The internal space of the recessed structure 12 surrounded by the bonding layer 13 needs to be filled with a tungsten material layer from the bottom to the top to form a low-resistance path from the bottom of the recessed structure 12 to the top of the recessed structure 12. Since the precursors used when filling the tungsten material layer usually contain fluorine, when fluorine atoms enter the material layer 11, the performance of the device structure will be reduced. Therefore, it is necessary to deposit the bonding layer 13 before depositing the tungsten material layer to prevent the diffusion of fluorine atoms into the material layer 11. At the same time, the bonding layer 13 also needs to have a certain wettability so that the subsequent tungsten material layer can grow on its surface and help the incubation of tungsten crystals. The bonding layer 13 also needs to have a low resistivity to ensure the conductivity of the metal (tungsten material layer). The bonding layer 13 is usually a metal nitride, and exemplarily, it can be a titanium nitride (TiN) layer, tungsten nitride (WN), or tantalum nitride (TaN) layer.

[0068] As Figure 2 shown, it is a partial structural schematic diagram of another semiconductor substrate 200. The semiconductor substrate 200 includes a first conductive layer 201, a dielectric layer 202, and a second conductive layer 203. Among them, the first conductive layer 201 and the second conductive layer 203 are usually composed of metal nitride thin films, and the middle dielectric layer 202 is usually selected from high dielectric constant (high-k) materials, such as HfSiON, HfO2, or HfSiO. The first conductive layer 201 and the second conductive layer 203 serve as upper and lower electrode plates therein, and the dielectric layer 202 sandwiched in the middle forms a capacitor with the upper and lower electrode plates. Exemplary metal nitrides can be a titanium nitride (TiN) layer, tungsten nitride (WN), or tantalum nitride (TaN).

[0069] Due to the need for step coverage, atomic layer deposition is often used to grow metal nitride films. Figure 3 For the method of depositing metal nitride in the prior art, taking the deposition of a titanium nitride material layer as an example, a metal precursor (TiCl4) feeding step and a nitrogen precursor (NH3) feeding step are alternately executed. The metal precursor feeding step includes several metal precursor feeding sub-steps 31, and each metal precursor feeding sub-step 31 includes a metal precursor supply step 311 and a first purge step 312. The nitrogen precursor feeding step includes several nitrogen precursor feeding sub-steps 32, and each nitrogen precursor feeding sub-step 32 includes a nitrogen precursor supply step 321 and a second purge step 322. The metal precursor feeding sub-step 31 can be repeatedly executed n times, and the nitrogen precursor feeding sub-step 32 can be alternately executed m times. However, the resistance value of the metal nitride film obtained by the existing atomic layer deposition metal nitride process is relatively high. In addition, the film growth rate is also relatively slow, affecting the number of substrates processed per unit time (WPH, wafer per hour).

[0070] The inventors found that introducing a silicon-containing gas into the process of depositing metal nitride can significantly accelerate the deposition rate of metal nitride, shorten the deposition time of metal nitride, and improve production capacity. At the same time, the obtained metal nitride has a lower resistance. Based on this, the present invention provides a method for depositing metal nitride, including the following steps:

[0071] S1: Provide a substrate.

[0072] Specifically, the substrate may include, for example, single crystal silicon, polycrystalline silicon. The substrate may also include silicon-containing compounds such as silicon nitride (Si3N4), silicon germanium (SiGe), or a substrate such as silicon on insulator (SOI). The substrate may also include other materials, including III-V or II-VI compound semiconductor materials or sapphire, and the substrate may further include a metal material, which may be at least one of Cu, W, Ti, Ta, Co, Ru, Al.

[0073] Features may be provided on the substrate, and the features may be downwardly recessed openings, or structures such as vias, trenches, or wordlines.

[0074] S2: Expose the substrate alternately to a metal precursor and a nitrogen precursor, and introduce a silicon-containing gas at a specific timing during the process to form a metal nitride film, and the silicon content in the metal nitride film is less than 3%.

[0075] Specifically, the metal nitride is formed on the surface of the substrate and / or the surface of the feature. The metal nitride is selected from at least one of TiN, WN, and TaN.

[0076] Taking the deposition of a titanium nitride material layer as an example, a metal precursor (TiCl4) feeding step and a nitrogen precursor (NH3) feeding step are alternately performed. The titanium precursor feeding step includes a plurality of titanium precursor feeding sub-steps, and each titanium precursor feeding sub-step includes a titanium precursor supply step and a first purging step. The nitrogen precursor feeding step includes a plurality of nitrogen precursor feeding sub-steps, and each nitrogen precursor feeding sub-step includes a nitrogen precursor supply step and a second purging step. The titanium precursor feeding sub-step can be repeatedly performed n times, and the nitrogen precursor feeding sub-step can be alternately performed m times. The silicon-containing gas can be fed in the titanium precursor feeding step, or in the nitrogen precursor feeding step, or simultaneously in the titanium precursor feeding step and the nitrogen precursor feeding step. The titanium precursor feeding sub-step can be repeatedly performed at least 5 times to further reduce the resistance of the obtained titanium nitride thin film.

[0077] The metal precursor gas described herein can be, for example, a Ti-containing reaction gas, a W-containing reaction gas, or a Ta-containing reaction gas. The Ti-containing reaction gas can be at least one of TiCl4, TDMAT (tetrakis(dimethylamino)titanium), TDEAT (tetrakis(diethylamino)titanium), and TiI4. The W-containing reaction gas can be at least one of WF6, W(CO)6 (hexacarbonyltungsten), and WCl6. The Ta-containing reaction gas can be at least one of PDMAT (pentakis(dimethylamino)tantalum), TaCl5, TaBr5, and TaF5. The silicon-containing gas described herein can be at least one of SiH2Cl2, SiHCl3, SiCl4, SiH4, or Si2H6. The nitrogen precursor gas described herein can be at least one of NH3 or N2H4. The purging gas can be N2 or a noble gas. In some embodiments, the flow rate ratio of the silicon-containing gas to the metal precursor is 0 to 50:1.

[0078] The method for depositing a metal nitride provided by the present invention will be described in detail below with reference to specific embodiments.

[0079] Example 1

[0080] Please refer to Figure 4, in this embodiment, the silicon-containing gas is fed in the metal precursor feeding sub-step 41. Specifically, the duration of the silicon-containing gas feeding step 43 is equivalent to the duration of the metal precursor supplying step 411 and the duration of the first purging step 412. Since silicon nitride may be generated when the nitrogen-containing gas meets the silicon-containing gas, a third purging step 413 is further provided after the metal precursor feeding sub-step 41 to remove the residual silicon-containing gas in the reaction chamber. After the metal precursor feeding sub-step 41 is cycled n times, the third purging step 413 is carried out. Subsequently, the nitrogen-containing precursor feeding sub-step 42 is carried out. After the nitrogen-containing precursor supplying step 421 and the second purging step 422 are cycled m times, a titanium nitride thin film is formed.

[0081] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0082] S401: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0083] S402: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a self-limiting chemical reaction with the surface of the substrate and adsorbs on the surface of the substrate. At the same time, SiH4 gas is introduced into the reaction chamber together with TiCl4;

[0084] S403: Introduce a purging gas into the reaction chamber to purge the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate. At the same time, SiH4 gas is introduced into the reaction chamber together with the purging gas to further purge the adsorbed TiCl4;

[0085] S404: Cycle steps S402 and S403 n times;

[0086] S405: Introduce a purging gas into the reaction chamber to purge the residual SiH4 in the reaction chamber;

[0087] S406: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to generate a TiN thin film;

[0088] S407: Introduce a purging gas into the reaction chamber to purge the unreacted NH3 and reaction by-products on the surface of the substrate;

[0089] S408: Cycle steps S406 and S407 m times;

[0090] S409: Cycle S402 - S408 until the titanium nitride thin film reaches the target thickness.

[0091] Optionally, steps S402 and S403 are looped at least once, and preferably, steps S402 and S403 are looped at least 5 times. Steps S406 and S407 are looped at least once.

[0092] Optionally, the process temperature in Example 1 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 411 can be less than 2 s, the duration of the first purge step 412 can be less than 30 s, the duration of the third purge step 413 can be less than 20 s, the duration of the nitrogen precursor supply step 421 can be less than 2 s, the duration of the second purge step 422 can be less than 30 s, the metal precursor feeding sub-step 41 can be repeated 5 times, and the nitrogen precursor feeding sub-step 42 can be executed 1 time.

[0093] Example 2

[0094] Please refer to Figure 5 , in this embodiment, the silicon-containing gas is fed in the metal precursor feeding sub-step 51. Specifically, the duration of the silicon-containing gas feeding step 53 is equivalent to the duration of the metal precursor supply step 511, and the silicon-containing gas feeding step 53 is not fed in the first purge step 512. After the metal precursor feeding sub-step 51 is looped n times, the nitrogen precursor feeding sub-step 52 is carried out. After the nitrogen precursor supply step 521 and the second purge step 522 are looped m times, a titanium nitride thin film is formed.

[0095] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0096] S501: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0097] S502: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the substrate surface and adsorbs on the substrate surface. At the same time, SiH4 gas is introduced into the reaction chamber together with TiCl4;

[0098] S503: Introduce a purge gas into the reaction chamber to purge away the unadsorbed TiCl4, residual SiH4, and reaction by-products on the reaction chamber and substrate surface;

[0099] S504: Loop steps S502 and S503 n times;

[0100] S505: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the substrate surface to form a TiN thin film;

[0101] S506: Introduce purge gas into the reaction chamber to purge unreacted NH3 and reaction by-products on the surface of the substrate.

[0102] S507: Repeat steps S505 and S506 m times in a cycle.

[0103] S508: Repeat steps S502 - S507 until the titanium nitride film reaches the target thickness.

[0104] Optionally, repeat steps S502 and S503 at least 1 time. Preferably, repeat steps S502 and S503 at least 5 times. Repeat steps S505 and S506 at least 1 time.

[0105] Optionally, the process temperature in Example 2 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 511 can be less than 2 s, the duration of the first purge step 512 can be less than 30 s, the duration of the nitrogen - containing precursor supply step 521 can be less than 2 s, the duration of the second purge step 522 can be less than 30 s, the metal precursor feeding sub - step 51 can be repeated 5 times, and the nitrogen - containing precursor feeding sub - step 52 can be executed 1 time.

[0106] Example 3

[0107] Please refer to Figure 6 , in this example, the silicon - containing gas is fed in the metal precursor feeding sub - step 61. Specifically, the duration of the silicon - containing gas feeding step 63 is equivalent to the duration of the nitrogen - containing precursor supply step 612. Since silicon nitride may be generated when the nitrogen - containing gas meets the silicon - containing gas, a third purge step 613 is further provided after the metal precursor feeding sub - step 61 to remove the residual silicon - containing gas in the reaction chamber. After repeating the metal precursor supply step 611 and the first purge step 612 n times, perform the third purge step 613. Then perform the nitrogen - containing precursor feeding sub - step 62. After repeating the nitrogen - containing precursor supply step 621 and the second purge step 622 m times, form a layer of titanium nitride film.

[0108] In this example, the specific growth steps of the metal nitride are as follows:

[0109] S601: Place a substrate in the reaction chamber of the semiconductor processing equipment.

[0110] S602: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self - limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate.

[0111] S603: Introduce a purge gas into the reaction chamber, and at the same time introduce a silicon-containing gas SiH4 to purge away the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate;

[0112] S604: Repeat the two steps of S602 and S603 n times;

[0113] S605: Introduce a purge gas into the reaction chamber to purge away the residual SiH4 in the reaction chamber;

[0114] S606: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN thin film;

[0115] S607: Introduce a purge gas into the reaction chamber to purge away the unreacted NH3 and reaction by-products on the surface of the substrate;

[0116] S608: Repeat the two steps of S606 and S607 m times;

[0117] S609: Repeat S602 to S608 until the titanium nitride thin film reaches the target thickness.

[0118] Optionally, the two steps of S602 and S603 are repeated at least 1 time. Preferably, the two steps of S602 and S603 are repeated at least 5 times. The two steps of S606 and S607 are repeated at least 1 time.

[0119] Optionally, the process temperature in Example 3 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal-containing precursor supply step 611 can be less than 2 s, the duration of the first purge step 612 can be less than 30 s, the duration of the third purge step 613 can be less than 20 s, the duration of the nitrogen-containing precursor supply step 621 can be less than 2 s, the duration of the second purge step 622 can be less than 30 s, the metal-containing precursor feeding sub-step 61 can be repeated 5 times, and the nitrogen-containing precursor feeding sub-step 62 can be executed 1 time.

[0120] Example 4

[0121] Please refer to Figure 7 , in this example, the silicon-containing gas is fed in the metal-containing precursor feeding sub-step 71. Specifically, the duration of the silicon-containing gas feeding step 73 is equivalent to the duration of the metal-containing precursor supply step 711 and the duration of the nitrogen-containing precursor supply step 712. After repeating the metal-containing precursor supply step 711 and the first purge step 712 n times, the nitrogen-containing precursor feeding sub-step 72 is carried out. After repeating the nitrogen-containing precursor supply step 721 and the second purge step 722 m times, a layer of titanium nitride thin film is formed.

[0122] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0123] S701: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0124] S702: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate. At the same time, introduce SiH4 gas;

[0125] S703: Introduce a purge gas into the reaction chamber. At the same time, introduce the silicon-containing gas SiH4 to purge away the unadsorbed or physically adsorbed TiCl4 on the surface of the reaction chamber and the substrate, as well as the reaction by-products;

[0126] S704: Repeat steps S702 and S703 n times;

[0127] S705: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN film;

[0128] S706: Introduce a purge gas into the reaction chamber to purge away the unreacted NH3 and the reaction by-products on the surface of the substrate;

[0129] S707: Repeat steps S705 and S706 m times;

[0130] S708: Repeat steps S702 to S707 until the titanium nitride film reaches the target thickness.

[0131] Optionally, steps S702 and S703 are repeated at least 1 time. Preferably, steps S702 and S703 are repeated at least 5 times. Steps S705 and S706 are repeated at least 1 time.

[0132] Optionally, the process temperature of Embodiment 4 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 711 can be less than 2 s, the duration of the first purge step 712 can be less than 30 s, the duration of the nitrogen-containing precursor supply step 721 can be less than 2 s, the duration of the second purge step 722 can be less than 30 s, the metal precursor feeding sub-step 71 can be repeated 5 times, and the nitrogen-containing precursor feeding sub-step 72 can be executed 1 time.

[0133] Embodiment 5

[0134] Please refer to Figure 8, in this embodiment, the silicon-containing gas is fed in the metal precursor feeding sub-step 81. Specifically, the duration of the silicon-containing gas feeding step 83 is equivalent to that of the first purge step 812. After the metal precursor supply step 811 and the first purge step 812 are cycled n times, the nitrogen-containing precursor feeding sub-step 82 is carried out. After the nitrogen-containing precursor supply step 821 and the second purge step 822 are cycled m times, a titanium nitride thin film is formed.

[0135] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0136] S801: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0137] S802: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate;

[0138] S803: Introduce a purge gas into the reaction chamber and simultaneously introduce the silicon-containing gas SiH4 to purge away the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate;

[0139] S804: Cycle the two steps of S802 and S803 n times;

[0140] S805: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN thin film;

[0141] S806: Introduce a purge gas into the reaction chamber to purge away the unreacted NH3 and reaction by-products on the surface of the substrate;

[0142] S807: Cycle the two steps of S805 and S806 m times;

[0143] S808: Cycle S802 to S807 until the titanium nitride thin film reaches the target thickness.

[0144] Optionally, the two steps of S802 and S803 are cycled at least 1 time. Preferably, the two steps of S802 and S803 are cycled at least 5 times. The two steps of S805 and S806 are cycled at least 1 time.

[0145] Optionally, the process temperature in Example 5 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 811 can be less than 2 s, the duration of the first purge step 812 can be less than 30 s, the duration of the nitrogen precursor supply step 821 can be less than 2 s, the duration of the second purge step 822 can be less than 30 s. The metal precursor feeding sub-step 81 can be repeated 5 times, and the nitrogen precursor feeding sub-step 82 can be executed 1 time.

[0146] Example 6

[0147] Please refer to Figure 9 , in this embodiment, the silicon-containing gas is fed in the metal precursor feeding sub-step 91. Specifically, the silicon-containing gas feeding step 93 is fed after the metal precursor supply step 911. After circulating the metal precursor supply step 911, the silicon-containing gas feeding step 93, and the first purge step 912 for n times, the nitrogen precursor feeding step 92 is carried out. After circulating the nitrogen precursor supply step 921 and the second purge step 922 for m times, a titanium nitride thin film is formed.

[0148] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0149] S901: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0150] S902: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate;

[0151] S903: Introduce SiH4 into the reaction chamber;

[0152] S904: Introduce a purge gas into the reaction chamber to purge away the unadsorbed or physically adsorbed TiCl4, SiH4, and reaction by-products on the surface of the reaction chamber and the substrate;

[0153] S905: Repeat steps S902 - S904 three steps for n times;

[0154] S906: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN thin film;

[0155] S907: Introduce a purge gas into the reaction chamber to purge away the unreacted NH3 and reaction by-products on the surface of the substrate;

[0156] S908: Repeat steps S906 and S907 two steps for m times;

[0157] S908: Loop S902 - S908 until the titanium nitride thin film reaches the target thickness.

[0158] Optionally, loop through steps S902 - S904 in sequence and alternately at least 1 time. Preferably, loop through steps S902 - S904 at least 5 times. Alternately loop through steps S906 and S907 at least 1 time.

[0159] Optionally, the process temperature in Example 6 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 911 can be less than 2 s, the duration of the first purge step 912 can be less than 30 s, the duration of the nitrogen precursor supply step 921 can be less than 2 s, the duration of the second purge step 922 can be less than 30 s, the duration of the silicon - containing gas feeding step 93 can be less than 3 s, the metal precursor feeding sub - step 91 can be repeated 5 times, and the nitrogen precursor feeding sub - step 92 can be executed 1 time.

[0160] Example 7

[0161] Please refer to Figure 10 , in this embodiment, the silicon - containing gas is fed in the metal precursor feeding sub - step 101. Specifically, the silicon - containing gas feeding step 103 is fed after the first purge step 1012. After looping through the metal precursor supply step 1011, the first purge step 1012, and the silicon - containing gas feeding step 103 n times, the nitrogen precursor feeding sub - step 102 is carried out. After looping through the nitrogen precursor supply step 1021 and the second purge step 1022 m times, a layer of titanium nitride thin film is formed.

[0162] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0163] S1001: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0164] S1002: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self - limiting reaction with the substrate surface and adsorbs on the substrate surface;

[0165] S1003: Introduce a purge gas into the reaction chamber to purge away the unadsorbed TiCl4 and reaction by - products on the reaction chamber and substrate surface;

[0166] S1004: Introduce SiH4 into the reaction chamber;

[0167] S1005: Loop through steps S1002 - S1004 three steps n times;

[0168] S1006: Introduce NH3 into the reaction chamber. NH3 reacts with TiCl4 adsorbed on the substrate surface to form a TiN thin film.

[0169] S1007: Introduce a purge gas into the reaction chamber to purge unreacted NH3 and reaction by-products from the substrate surface.

[0170] S1008: Repeat steps S1006 and S1007 m times.

[0171] S1008: Repeat S1002 - S1008 until the titanium nitride thin film reaches the target thickness.

[0172] Optionally, steps S1002 - S1004 are alternately repeated at least 1 time, preferably at least 5 times. Steps S1006 and S1007 are alternately repeated at least 1 time.

[0173] Optionally, the process temperature in Example 7 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1011 can be less than 2 s, the duration of the first purge step 1012 can be less than 30 s, the duration of the nitrogen - containing precursor supply step 1021 can be less than 2 s, the duration of the second purge step 1022 can be less than 30 s, the duration of the silicon - containing gas feeding step 103 can be less than 3 s, the metal precursor feeding sub - step 101 can be repeated 5 times, and the nitrogen - containing precursor feeding sub - step 102 can be executed 1 time.

[0174] Example 8

[0175] Please refer to Figure 11 , in this example, the silicon - containing gas is fed in the nitrogen - containing precursor feeding sub - step 112. Specifically, the duration of the silicon - containing gas feeding step 113 is comparable to the duration of the nitrogen - containing precursor supply step 1121 and the duration of the second purge step 1122. First, perform the metal precursor feeding sub - step 111, that is, after repeating the metal precursor supply step 1111 and the first purge step 1112 n times, perform the nitrogen - containing precursor feeding sub - step 112, that is, after repeating the nitrogen - containing precursor supply step 1121 and the second purge step 1122 m times, a layer of titanium nitride thin film is formed.

[0176] In this example, the specific growth steps of the metal nitride are as follows:

[0177] S1101: Place a substrate in the reaction chamber of the semiconductor processing equipment.

[0178] S1102: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a self-limiting chemical reaction with the surface of the substrate and adsorbs on the surface of the substrate;

[0179] S1103: Introduce a purge gas into the reaction chamber to purge the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate;

[0180] S1104: Repeat steps S1102 and S1103 n times;

[0181] S1105: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN film, and at the same time, introduce SiH4 into the reaction chamber;

[0182] S1106: Introduce a purge gas and SiH4 into the reaction chamber to purge the unreacted NH3 and reaction by-products on the surface of the substrate;

[0183] S1107: Repeat steps S1105 and S1106 m times;

[0184] S1108: Repeat S1102 - S1107 until the titanium nitride film reaches the target thickness.

[0185] Optionally, the above growth steps may further include a fourth purge step, that is, introducing a purge gas into the reaction chamber. The fourth purge step is performed after S1107.

[0186] Optionally, alternately repeat steps S1102 to S1103 at least 1 time. Preferably, repeat steps S1102 and S1103 at least 5 times. Alternately repeat steps S1105 and S1106 at least 1 time.

[0187] Optionally, the process temperature in Example 8 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1111 can be less than 2 s, the duration of the first purge step 1112 can be less than 30 s, the duration of the nitrogen-containing precursor supply step 1121 can be less than 2 s, the duration of the second purge step 1122 can be less than 30 s, the duration of the fourth purge step can be less than 20 s, the metal precursor feeding sub-step 111 can be repeated 5 times, and the nitrogen-containing precursor feeding sub-step 112 can be performed 1 time.

[0188] Example 9

[0189] Please refer to Figure 12, in this embodiment, the silicon-containing gas is fed in the nitrogen-containing precursor feeding sub-step 122. Specifically, the duration of the silicon-containing gas feeding step 123 is equivalent to the duration of the nitrogen-containing precursor supply step 1221. First, the metal precursor feeding sub-step 121 is carried out, that is, after the metal precursor supply step 1211 and the first purge step 1212 are cycled n times, the nitrogen-containing precursor feeding sub-step 122 is carried out, that is, after the nitrogen-containing precursor supply step 1221 and the second purge step 1222 are cycled m times, a titanium nitride thin film is formed.

[0190] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0191] S1201: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0192] S1202: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemically self-limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate;

[0193] S1203: Introduce a purge gas into the reaction chamber to purge the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate;

[0194] S1204: Cycle steps S1202 and S1203 n times;

[0195] S1205: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to generate a TiN thin film, and at the same time introduce SiH4 into the reaction chamber;

[0196] S1206: Introduce a purge gas into the reaction chamber to purge the unreacted NH3 and reaction by-products on the surface of the substrate;

[0197] S1207: Cycle steps S1205 and S1206 m times;

[0198] S1208: Cycle S1202 to S1207 until the titanium nitride thin film reaches the target thickness.

[0199] Optionally, cycle steps S1202 to S1203 alternately at least 1 time. Preferably, cycle steps S1202 and S1203 at least 5 times. Cycle steps S1205 and S1206 alternately at least 1 time.

[0200] Optionally, the process temperature in Example 9 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1211 can be less than 2 s, the duration of the first purge step 1212 can be less than 30 s, the duration of the nitrogen precursor supply step 1221 can be less than 2 s, the duration of the second purge step 1222 can be less than 30 s, the metal precursor feeding sub-step 121 can be repeated 5 times, and the nitrogen precursor feeding sub-step 122 can be executed 1 time.

[0201] Example 10

[0202] Please refer to Figure 13 , in this embodiment, the silicon-containing gas is fed in the nitrogen precursor feeding sub-step 132. Specifically, the duration of the silicon-containing gas feeding step 133 is equivalent to the duration of the second purge step 1322. First, the metal precursor feeding step 131 is performed, that is, after the metal precursor supply step 1311 and the first purge step 1312 are cycled n times, the nitrogen precursor feeding step 132 is performed, that is, after the nitrogen precursor supply step 1321 and the second purge step 1322 are cycled m times, a titanium nitride thin film is formed.

[0203] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0204] S1301: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0205] S1302: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the substrate surface and adsorbs on the substrate surface;

[0206] S1303: Introduce a purge gas into the reaction chamber to purge away the unadsorbed TiCl4 and reaction by-products on the reaction chamber and substrate surface;

[0207] S1304: Cycle steps S1302 and S1303 n times;

[0208] S1305: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the substrate surface to form a TiN thin film;

[0209] S1306: Introduce a purge gas and SiH4 into the reaction chamber to purge away the unreacted NH3 and reaction by-products on the substrate surface;

[0210] S1307: Cycle steps S1305 and S1306 m times;

[0211] S1308: Cycle S1302 - S1307 until the titanium nitride thin film reaches the target thickness.

[0212] Optionally, the above growth step may further include a fourth purge step, i.e., introducing a purge gas into the reaction chamber. The fourth purge step is carried out after S1307.

[0213] Optionally, steps S1302 to S1303 are alternately cycled at least 1 time, preferably, steps S1302 and S1303 are cycled at least 5 times. Steps S1305 and S1306 are alternately cycled at least 1 time.

[0214] Optionally, the process temperature of Example 10 may be 350 - 500 °C, and the process pressure may be 1 - 10 Torr. The duration of the metal precursor supply step 1311 may be less than 2 s, the duration of the first purge step 1312 may be less than 30 s, the duration of the nitrogen precursor supply step 1321 may be less than 2 s, the duration of the second purge step 1322 may be less than 30 s, the duration of the fourth purge step may be less than 20 s, the metal precursor feeding sub-step 131 may be repeated 5 times, and the nitrogen precursor feeding sub-step 132 may be carried out 1 time.

[0215] Example 11

[0216] Please refer to Figure 14 , in this embodiment, the silicon-containing gas is fed in the nitrogen precursor feeding sub-step 142. Specifically, the silicon-containing gas feeding step 143 is carried out after the nitrogen precursor supply step 1421. First, the metal precursor feeding sub-step 141 is carried out, i.e., after cycling the metal precursor supply step 1411 and the first purge step 1412 n times, the nitrogen precursor feeding sub-step 142 is carried out, i.e., after cycling the nitrogen precursor supply step 1421 and the second purge step 1422 m times, a titanium nitride thin film is formed.

[0217] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0218] S1401: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0219] S1402: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the substrate surface and adsorbs on the substrate surface;

[0220] S1403: Introduce a purge gas into the reaction chamber to purge away the unadsorbed TiCl4 and reaction by-products on the reaction chamber and substrate surface;

[0221] S1404: Cycle steps S1402 and S1403 n times;

[0222] S1405: Introduce NH3 into the reaction chamber. NH3 reacts with TiCl4 adsorbed on the substrate surface to form a TiN thin film;

[0223] S1406: Introduce SiH4 into the reaction chamber;

[0224] S1407: Introduce a purge gas into the reaction chamber to purge unreacted NH3 and reaction by-products from the substrate surface;

[0225] S1408: Repeat steps S1405 and S1307 three steps m times;

[0226] S1409: Repeat S1402 - S1408 until the titanium nitride thin film reaches the target thickness.

[0227] Optionally, alternately repeat steps S1402 to S1403 at least 1 time. Preferably, repeat steps S1402 and S1403 at least 5 times. Alternately repeat steps S1405 - S1407 at least 1 time.

[0228] Optionally, the process temperature in Example 11 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1411 can be less than 2 s, the duration of the first purge step 1412 can be less than 30 s, the duration of the nitrogen - containing precursor supply step 1421 can be less than 2 s, the duration of the second purge step 1422 can be less than 30 s, the duration of the silicon - containing gas feeding step 143 can be less than 3 s, the metal precursor feeding sub - step 141 can be repeated 5 times, and the nitrogen - containing precursor feeding sub - step 142 can be executed 1 time.

[0229] Example 12

[0230] Please refer to Figure 15 , in this embodiment, the silicon - containing gas is fed in the nitrogen - containing precursor feeding sub - step 152. Specifically, the silicon - containing gas feeding step 153 is fed after the second purge step 1522. First, perform the nitrogen - containing precursor feeding sub - step 151, that is, after repeating the metal precursor supply step 1511 and the first purge step 1512 n times, perform the nitrogen - containing precursor feeding sub - step 152, that is, after repeating the nitrogen - containing precursor supply step 1521 and the second purge step 1522 m times, form a layer of titanium nitride thin film.

[0231] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0232] S1501: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0233] S1502: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the substrate surface and adsorbs on the surface of the substrate.

[0234] S1503: Introduce a purge gas into the reaction chamber to purge the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate.

[0235] S1504: Repeat the two steps of S1502 and S1503 n times.

[0236] S1505: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the substrate surface to form a TiN thin film.

[0237] S1506: Introduce a purge gas into the reaction chamber to purge the unreacted NH3 and reaction by-products on the substrate surface.

[0238] S1507: Introduce SiH4 into the reaction chamber.

[0239] S1508: Repeat the three steps of S1505 to S1507 m times.

[0240] S1509: Repeat S1502 to S1508 until the titanium nitride thin film reaches the target thickness.

[0241] Optionally, the above growth steps may further include a fourth purge step, that is, introducing a purge gas into the reaction chamber. The fourth purge step is performed after S1508.

[0242] Optionally, the two steps of S1502 to S1503 are alternately repeated at least 1 time. Preferably, the two steps of S1502 and S1503 are repeated at least 5 times. The three steps of S1505 to S1507 are alternately repeated at least 1 time.

[0243] Optionally, the process temperature in Example 12 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1511 can be less than 2 s, the duration of the first purge step 1512 can be less than 30 s, the duration of the nitrogen-containing precursor supply step 1521 can be less than 2 s, the duration of the second purge step 1522 can be less than 30 s, the duration of the fourth purge step can be less than 20 s, the duration of the silicon-containing gas feeding step 153 can be less than 3 s, the metal precursor feeding sub-step 151 can be repeated 5 times, and the nitrogen-containing precursor feeding sub-step 152 can be performed 1 time.

[0244] Example 13

[0245] Please refer to Figure 16, in this embodiment, the silicon-containing gas is fed simultaneously in the metal precursor feeding sub-step 161 and the nitrogen precursor feeding sub-step 162. Specifically, the duration of the silicon-containing gas feeding step 153 is comparable to the duration of the metal precursor feeding sub-step 161 and the duration of the nitrogen precursor feeding sub-step 162. First, the nitrogen precursor feeding sub-step 161 is carried out, that is, after cycling the metal precursor supply step 1611 and the first purge step 1612 for n times, the nitrogen precursor feeding sub-step 162 is carried out, that is, after cycling the nitrogen precursor supply step 1621 and the second purge step 1622 for m times, a titanium nitride thin film is formed.

[0246] In this embodiment, the specific growth steps of the metal nitride are as follows:

[0247] S1601: Place a substrate in the reaction chamber of the semiconductor processing equipment;

[0248] S1602: Introduce TiCl4 gas into the reaction chamber. The TiCl4 entering the reaction chamber undergoes a chemical self-limiting reaction with the surface of the substrate and adsorbs on the surface of the substrate. At the same time, SiH4 is introduced;

[0249] S1603: Introduce a purge gas into the reaction chamber to purge away the unadsorbed TiCl4 and reaction by-products on the surface of the reaction chamber and the substrate. At the same time, SiH4 is introduced;

[0250] S1604: Cycle steps S1602 and S1603 n times;

[0251] S1605: Introduce NH3 into the reaction chamber. NH3 reacts with the TiCl4 adsorbed on the surface of the substrate to form a TiN thin film. At the same time, SiH4 is introduced;

[0252] S1606: Introduce a purge gas into the reaction chamber to purge away the unreacted NH3 and reaction by-products on the surface of the substrate. At the same time, SiH4 is introduced;

[0253] S1607: Cycle steps S1605 to S1606 m times;

[0254] S1609: Cycle S1602 to S1607 until the titanium nitride thin film reaches the target thickness.

[0255] Optionally, the above growth steps may further include a fourth purge step, that is, introducing a purge gas into the reaction chamber. The fourth purge step is carried out after S1607.

[0256] Optionally, cycle steps S1602 to S1603 alternately at least once. Preferably, cycle steps S1602 and S1603 at least 5 times. Cycle steps S1605 and S1606 alternately at least once.

[0257] Optionally, the process temperature in Example 13 can be 350 - 500 °C, and the process pressure can be 1 - 10 Torr. The duration of the metal precursor supply step 1611 can be less than 2 s, the duration of the first purge step 1612 can be less than 30 s, the duration of the nitrogen precursor supply step 1621 can be less than 2 s, the duration of the second purge step 1622 can be less than 30 s, the duration of the fourth purge step can be less than 20 s, the metal precursor feeding sub-step 161 can be repeated 5 times, and the nitrogen precursor feeding sub-step 162 can be executed 1 time.

[0258] Comparison of experimental results

[0259] Example 14

[0260] The experimental parameters of Example 14 are as follows: process temperature 425 °C, process pressure 8 Torr, flow rate of the metal precursor TiCl4 100 sccm, flow rate of the nitrogen precursor NH3 1300 sccm, flow rate of the purge gas N2 3000 sccm, and flow rate of the silicon-containing gas SiH4 300 sccm. The specific experimental steps are as follows: After the metal precursor feeding sub-step is cycled 5 times (i.e., after cycling the metal precursor supply step for 0.1 s and the first purge step for 0.3 s a total of 5 times, for a total of 2 s), the third purge step is carried out for 0.3 s. Subsequently, after the nitrogen precursor feeding sub-step is carried out 1 time (i.e., after cycling the nitrogen precursor supply step for 0.15 s and the second purge step for 0.3 s a total of 1 time), one cycle is completed (for a total of 2.75 s), and a titanium nitride thin film is formed. The above cycle is repeated 620 times until the titanium nitride thin film reaches the target thickness.

[0261] Comparative example

[0262] The difference between the method for depositing the metal nitride provided in the comparative example and the example of Example 14 is that no silicon-containing gas is introduced throughout the process. To obtain a titanium nitride thin film with a thickness similar to that of Example 14, the comparative example needs to repeat the cycle more times.

[0263] Measure the thickness of the metal nitride material layers deposited in Example 14 and the comparative example under the same number of cycles, and the sheet resistance of the metal nitride material layers in Example 14 and the comparative example under the condition of the same material layer thickness. The test results obtained are shown in Table 1 below.

[0264] Table 1 Film thickness and sheet resistance of the metal nitride material layer

[0265]

[0266] It can be seen that, under the same process time, introducing a silicon-containing gas during the process can significantly increase the growth rate of the metal nitride thin film, and the growth rate can be increased by about 23%. At the same time, under the condition of the same film thickness, the resistivity of the metal nitride thin film also decreases significantly, and the resistivity decreases by about 32%. Therefore, introducing a silicon-containing gas during the deposition of the metal nitride thin film can increase the growth rate of the metal nitride thin film and at the same time reduce the resistivity of the metal nitride thin film.

[0267] The sample obtained in Example 14 was subjected to XPS (X-ray photoelectron spectroscopy) analysis to detect the elemental composition of the sample. The results obtained are shown in Figure 17 , where Figure 17 a is the photoelectron spectrum of nitrogen element, Figure 17 b is the photoelectron spectrum of titanium element. The green line represents the sample of Example 14, and the yellow line represents the sample of the comparative example.

[0268] It can be seen that the energy spectra of nitrogen and titanium in Example 14 are consistent with those of the comparative example, indicating that their components are the same. Although a silicon-containing gas was introduced in Example 14, the silicon-containing gas did not change the components and composition of the obtained metal nitride. Optionally, the silicon content of the metal nitride thin film obtained by using the deposition method of the metal nitride provided by the present invention is less than 3%.

[0269] Example 15

[0270] The inventor further found through research that the resistivity of the metal nitride can be further reduced by reducing the supply time of the metal-containing precursor. The supply time of the metal-containing precursor is preferably 0.01 - 1 s.

[0271] Table 2 Sheet resistance of the metal nitride material layer obtained by changing the supply time of the metal-containing precursor

[0272]

[0273] Table 2 shows the change in the resistivity value of the metal nitride prepared by supplying the reaction gas in the manner of Example 4 and changing the supply time of the metal-containing precursor. It can be seen that compared with the supply time of the metal-containing precursor of 2 s in the comparative example (d), when the supply time of the metal-containing precursor in Examples (a) - (c) is reduced to 0.01 - 1 s, the resistivity of the metal nitride can be reduced, and the resistivity of the deposited metal nitride can meet the process and device requirements. Of course, the above rule also applies to Examples 1 - 14 other than Example 4.

[0274] The present invention also provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the method for depositing the metal nitride is implemented.

[0275] The present invention also provides a semiconductor processing device, including: a processor, a memory, and a program or instruction stored on the memory and executable on the processor, where the program or instruction, when executed by the processor, implements the method for depositing a metal nitride.

[0276] Although the content of the present invention has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and alternatives to the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A method for depositing a metal nitride, characterized in that: Include: A metal-containing precursor feeding step and a nitrogen-containing precursor feeding step, silicon-containing gas is fed in the metal-containing precursor feeding step and / or the nitrogen-containing precursor feeding step, and the metal-containing precursor feeding step and the nitrogen-containing precursor feeding step are repeated alternately until the metal nitride film reaches a target thickness.

2. The method for depositing a metal nitride according to claim 1, wherein: The silicon content in the metal nitride film is less than 3%.

3. The method for depositing metal nitride according to claim 1, characterized in that: The metal-containing precursor feeding step includes several metal-containing precursor feeding sub-steps, each of which includes a metal-containing precursor supply step and a first purge step. The nitrogen-containing precursor feeding step includes several nitrogen-containing precursor feeding sub-steps, each of which includes a nitrogen-containing precursor supply step and a second purge step.

4. The method for depositing metal nitride according to claim 3, characterized in that: The metal-containing precursor feeding sub-step is performed at least once.

5. The method for depositing metal nitride according to claim 4, characterized in that: The metal-containing precursor feeding sub-step is repeated at least 5 times.

6. The method for depositing metal nitride according to claim 3, characterized in that: The nitrogen-containing precursor feeding sub-step is performed at least once.

7. The method for depositing metal nitride according to claim 3, characterized in that: The silicon-containing gas is fed in the metal-containing precursor feeding sub-step.

8. The method for depositing a metal nitride according to claim 7, wherein: The silicon-containing gas is fed in the metal-containing precursor supplying step.

9. The method for depositing metal nitride according to claim 7, characterized in that: The silicon-containing gas is fed in the first purge step.

10. The method for depositing metal nitride according to claim 7, characterized in that: The silicon-containing gas is fed in the metal-containing precursor supplying step and the first purging step.

11. The method for depositing metal nitride according to claim 7, wherein: The silicon-containing gas is fed after the metal-containing precursor supplying step or after the first purge step.

12. The method for depositing a metal nitride according to any one of claims 8 to 11, characterized in that: After the metal-containing precursor feeding sub-step, the method further includes: a third purge step.

13. The method for depositing metal nitride according to claim 3, characterized in that: The silicon-containing gas is fed in the nitrogen-containing precursor feeding sub-step.

14. The method for depositing a metal nitride according to claim 13, wherein: The silicon-containing gas is fed in the nitrogen-containing precursor supplying step.

15. The method for depositing metal nitride according to claim 13, characterized in that: The silicon-containing gas is fed in the second purge step.

16. The method for depositing metal nitride according to claim 13, wherein: The silicon-containing gas is fed in the nitrogen-containing precursor supplying step and the second purge step.

17. The method for depositing a metal nitride according to claim 13, wherein: The silicon-containing gas is fed after the nitrogen-containing precursor supplying step or after the second purge step.

18. The method for depositing a metal nitride according to any one of claims 14 to 17, characterized in that: After the nitrogen-containing precursor feeding sub-step, the method further includes: a fourth purge step.

19. The method for depositing a metal nitride according to claim 1, wherein: The silicon-containing gas is at least one of SiH4, Si2H6, SiH2Cl2, SiHCl3, and SiCl4.

20. The method for depositing a metal nitride according to claim 1, wherein: The metal-containing precursor is at least one of TiCl4, TDMAT, TDEAT, TiI4, WF6, WCl6, W(CO)6, PDMAT, TaCl5, TaBr5, and TaF5.

21. The method for depositing a metal nitride according to claim 1, wherein: The nitrogen-containing precursor is at least one of NH3 or N2H4.

22. The method for depositing a metal nitride according to claim 1, wherein: The flow ratio of the silicon-containing gas to the metal-containing precursor is 0 to 50:

1.

23. The method for depositing metal nitride according to claim 3, characterized in that: The duration of the metal-containing precursor supplying step is no more than 2 seconds.

24. The method for depositing a metal nitride according to claim 23, wherein: The duration of the metal-containing precursor supplying step is 0.01-1 s.

25. The method for depositing a metal nitride according to claim 3, wherein: The duration of the first purging step is no more than 30 seconds.

26. The method for depositing metal nitride according to claim 3, characterized in that: The duration of the nitrogen-containing precursor supplying step is no more than 2 seconds.

27. The method for depositing a metal nitride according to claim 3, wherein: The duration of the second purge step is no more than 30 seconds.

28. The method for depositing a metal nitride according to claim 12, wherein: The duration of the third purge step is no more than 20 seconds.

29. The method for depositing a metal nitride according to claim 18, wherein: The duration of the fourth purge step is no more than 20 seconds.

30. A method for depositing titanium nitride, characterized in that: The method comprises: a TiCl4 feeding step and an NH3 feeding step, wherein silicon-containing gas is fed in the TiCl4 feeding step, and a third purge step is further included after the TiCl4 feeding step, and the TiCl4 feeding step and the NH3 feeding step are repeated alternately until the titanium nitride film reaches a target thickness.

31. A readable storage medium, characterized in that: The readable storage medium stores a program or an instruction, and when the program or the instruction is executed by a processor, the method for depositing a metal nitride according to any one of claims 1 to 29 is implemented.

32. A semiconductor processing device, characterized in that: include: A processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein the program or instruction, when executed by the processor, implements the method for depositing metal nitride according to any one of claims 1 to 29.

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